CN104659191A - 发光二极管封装体的制造方法 - Google Patents

发光二极管封装体的制造方法 Download PDF

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Publication number
CN104659191A
CN104659191A CN201310583729.1A CN201310583729A CN104659191A CN 104659191 A CN104659191 A CN 104659191A CN 201310583729 A CN201310583729 A CN 201310583729A CN 104659191 A CN104659191 A CN 104659191A
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China
Prior art keywords
emitting diode
substrate
light
light emitting
electrode
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CN201310583729.1A
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English (en)
Inventor
彭建忠
洪梓健
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201310583729.1A priority Critical patent/CN104659191A/zh
Priority to US14/542,872 priority patent/US20150140701A1/en
Publication of CN104659191A publication Critical patent/CN104659191A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管封装体的制造方法，包括以下步骤：提供具有电极的基板；提供发光二极管，将所述发光二极管放置在所述基板上，并使发光二极管的电极与基板上的电极贴设；提供紫外光固化胶，使所述紫外光固化胶分布在所述基板上并包覆所述发光二极管，固化所述紫外光固化胶，并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定。本发明中，因通过设置在基板上的紫外光固化胶直接包覆发光二极管并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定，无需额外的制程来固定发光二极管及导通支架及发光二极管，进而可达到简化制程、缩短工时的目的。

Description

发光二极管封装体的制造方法
技术领域
本发明涉及一种半导体元件，特别涉及一种发光二极管封装体的制造方法。
背景技术
传统的发光二级管封装体的制造方法包括如下步骤：提供发光二极管芯片、将发光二极管芯片通过粘结的方式固定在支架上、通过打金线的方式将发光二极管及支架导通、灌胶将芯片级支架包裹起来、烘干胶体。此制造过程繁琐，浪费工时。
发明内容
有鉴于此，有必要提供一种制程简单的发光二极管封装体的制造方法。
一种发光二极管封装体的制造方法，包括以下步骤：
提供具有电极的基板；
提供发光二极管，将所述发光二极管放置在所述基板上，并使发光二极管的电极与基板上的电极贴设；
提供紫外光固化胶，使所述紫外光固化胶分布在所述基板上并包覆所述发光二极管，固化所述紫外光固化胶，并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定。
本发明中，因通过设置在基板上的紫外光固化胶直接包覆发光二极管并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定，无需额外的制程来固定发光二极管及导通支架及发光二极管，进而可达到简化制程、缩短工时的目的。
附图说明
图1为本发明较佳实施例的发光二极管封装体的示意图。
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
本发明较佳实施例的发光二极管封装体的制造方法包括如下步骤：
请参阅图1，提供一具有电极11的基板10。所述基板10由具有良好的散热性能的硅、石墨、三氧化二铝、二氧化钛、陶瓷或金属制成。所述电极11数量为二，间隔的设置的所述基板10的中部。所述二电极11贯穿所述基板10的上、下相对两表面，并且二电极11的上、下相对两端分别与所述基板10的上、下相对两表面共面。
提供一发光二极管20，将所述发光二极管20放置在所述基板10上，并使发光二极管20的电极11（图未示）与基板10上的电极11贴设。
提供紫外光固化胶30（UV固化胶），使所述紫外光固化胶30分布在所述基板10上直至所述紫外光固化胶30完全包覆所述发光二极管20并固化所述紫外光固化胶30，并通过紫外光固化胶30的固化而实现发光二极管20与基板10的电极11导电连接及发光二极管20相对于基板10的固定。
提供一荧光粉层40，并将所述荧光粉层40设置在所述紫外光固化胶30固化后形成的胶层的顶面。所述发光二极管20发出的光线激发所述荧光粉层40后得到所需颜色的光。本实施例中，所述发光二极管20为蓝光二极管，所荧光粉层40为黄色荧光粉层40。所述发光二极管20发出的光线激发荧光粉层40后得到所需的白光。
提供一光导出机构50，并将所述光导出机构50设置在所述荧光粉层40的顶端。所述光导出机构50为含有碳、氧、硅的材料。所述光导出机构50用以调节发光二极管20发出的光线的出光光型。
本发明中，因通过设置在基板10上的紫外光固化胶30直接包覆发光二极管20并通过紫外光固化胶30的固化而实现发光二极管20与基板10的电极11导电连接及发光二极管20相对于基板10的固定，无需额外的制程来固定发光二极管20及导通支架及发光二极管20，进而可达到简化制程、缩短工时的目的。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (5)

1.一种发光二极管封装体的制造方法，包括以下步骤：
提供具有电极的基板；
提供发光二极管，将所述发光二极管放置在所述基板上，并使发光二极管的电极与基板上的电极贴设；
提供紫外光固化胶，使所述紫外光固化胶分布在所述基板上并包覆所述发光二极管，固化所述紫外光固化胶，并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定。
2.如权利要求1所述的发光二极管封装体的制造方法，其特征在于：所述基板由具有良好的散热性能的硅、石墨、三氧化二铝、二氧化钛、陶瓷或金属制成。
3.如权利要求1所述的发光二极管封装体的制造方法，其特征在于：所述电极贯穿所述基板的上、下相对两表面，并且所述电极的上、下相对两端分别与所述基板的上、下相对两表面共面。
4.如权利要求1所述的发光二极管封装体的制造方法，其特征在于：还包括如下制程：提供一荧光粉层，并将所述荧光粉层设置在所述紫外光固化胶固化后形成的胶层的顶面。
5.如权利要求4所述的发光二极管封装体的制造方法，其特征在于：还包括如下制程：提供一光导出机构，并将所述光导出机构设置在所述荧光粉层的顶端。
CN201310583729.1A 2013-11-20 2013-11-20 发光二极管封装体的制造方法 Pending CN104659191A (zh)

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US14/542,872 US20150140701A1 (en) 2013-11-20 2014-11-17 Method for manufacturing light emitting diode package

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226164A (zh) * 2015-09-09 2016-01-06 南京光宝光电科技有限公司 白光led直接贴片式的封装结构
CN108224366A (zh) * 2016-12-15 2018-06-29 松下知识产权经营株式会社 发光元件以及发光元件的制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018022844A (ja) * 2016-08-05 2018-02-08 日亜化学工業株式会社 発光装置及び発光装置の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020066905A1 (en) * 2000-06-20 2002-06-06 Bily Wang Wing-shaped surface mount package for light emitting diodes
US20050006651A1 (en) * 2003-06-27 2005-01-13 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
CN101160670A (zh) * 2005-03-29 2008-04-09 飞利浦拉米尔德斯照明设备有限责任公司 有利于背后照明的led广角发射透镜
US20090121252A1 (en) * 2007-11-14 2009-05-14 Hung-Tsung Hsu Method for manufacturing flip-chip light emitting diode package
US20100148211A1 (en) * 2008-12-15 2010-06-17 Everlight Electronics Co., Ltd. Light emitting diode package structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020066905A1 (en) * 2000-06-20 2002-06-06 Bily Wang Wing-shaped surface mount package for light emitting diodes
US20050006651A1 (en) * 2003-06-27 2005-01-13 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
CN101160670A (zh) * 2005-03-29 2008-04-09 飞利浦拉米尔德斯照明设备有限责任公司 有利于背后照明的led广角发射透镜
US20090121252A1 (en) * 2007-11-14 2009-05-14 Hung-Tsung Hsu Method for manufacturing flip-chip light emitting diode package
US20100148211A1 (en) * 2008-12-15 2010-06-17 Everlight Electronics Co., Ltd. Light emitting diode package structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226164A (zh) * 2015-09-09 2016-01-06 南京光宝光电科技有限公司 白光led直接贴片式的封装结构
CN108224366A (zh) * 2016-12-15 2018-06-29 松下知识产权经营株式会社 发光元件以及发光元件的制造方法

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Application publication date: 20150527