CN104659191A - 发光二极管封装体的制造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000853 adhesive Substances 0.000 claims abstract description 25
- 230000001070 adhesive effect Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005538 encapsulation Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000008520 organization Effects 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 238000004904 shortening Methods 0.000 abstract 1
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
一种发光二极管封装体的制造方法,包括以下步骤:提供具有电极的基板;提供发光二极管,将所述发光二极管放置在所述基板上,并使发光二极管的电极与基板上的电极贴设;提供紫外光固化胶,使所述紫外光固化胶分布在所述基板上并包覆所述发光二极管,固化所述紫外光固化胶,并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定。本发明中,因通过设置在基板上的紫外光固化胶直接包覆发光二极管并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定,无需额外的制程来固定发光二极管及导通支架及发光二极管,进而可达到简化制程、缩短工时的目的。
Description
技术领域
本发明涉及一种半导体元件,特别涉及一种发光二极管封装体的制造方法。
背景技术
传统的发光二级管封装体的制造方法包括如下步骤:提供发光二极管芯片、将发光二极管芯片通过粘结的方式固定在支架上、通过打金线的方式将发光二极管及支架导通、灌胶将芯片级支架包裹起来、烘干胶体。此制造过程繁琐,浪费工时。
发明内容
有鉴于此,有必要提供一种制程简单的发光二极管封装体的制造方法。
一种发光二极管封装体的制造方法,包括以下步骤:
提供具有电极的基板;
提供发光二极管,将所述发光二极管放置在所述基板上,并使发光二极管的电极与基板上的电极贴设;
提供紫外光固化胶,使所述紫外光固化胶分布在所述基板上并包覆所述发光二极管,固化所述紫外光固化胶,并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定。
本发明中,因通过设置在基板上的紫外光固化胶直接包覆发光二极管并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定,无需额外的制程来固定发光二极管及导通支架及发光二极管,进而可达到简化制程、缩短工时的目的。
附图说明
图1为本发明较佳实施例的发光二极管封装体的示意图。
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
本发明较佳实施例的发光二极管封装体的制造方法包括如下步骤:
请参阅图1,提供一具有电极11的基板10。所述基板10由具有良好的散热性能的硅、石墨、三氧化二铝、二氧化钛、陶瓷或金属制成。所述电极11数量为二,间隔的设置的所述基板10的中部。所述二电极11贯穿所述基板10的上、下相对两表面,并且二电极11的上、下相对两端分别与所述基板10的上、下相对两表面共面。
提供一发光二极管20,将所述发光二极管20放置在所述基板10上,并使发光二极管20的电极11(图未示)与基板10上的电极11贴设。
提供紫外光固化胶30(UV固化胶),使所述紫外光固化胶30分布在所述基板10上直至所述紫外光固化胶30完全包覆所述发光二极管20并固化所述紫外光固化胶30,并通过紫外光固化胶30的固化而实现发光二极管20与基板10的电极11导电连接及发光二极管20相对于基板10的固定。
提供一荧光粉层40,并将所述荧光粉层40设置在所述紫外光固化胶30固化后形成的胶层的顶面。所述发光二极管20发出的光线激发所述荧光粉层40后得到所需颜色的光。本实施例中,所述发光二极管20为蓝光二极管,所荧光粉层40为黄色荧光粉层40。所述发光二极管20发出的光线激发荧光粉层40后得到所需的白光。
提供一光导出机构50,并将所述光导出机构50设置在所述荧光粉层40的顶端。所述光导出机构50为含有碳、氧、硅的材料。所述光导出机构50用以调节发光二极管20发出的光线的出光光型。
本发明中,因通过设置在基板10上的紫外光固化胶30直接包覆发光二极管20并通过紫外光固化胶30的固化而实现发光二极管20与基板10的电极11导电连接及发光二极管20相对于基板10的固定,无需额外的制程来固定发光二极管20及导通支架及发光二极管20,进而可达到简化制程、缩短工时的目的。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (5)
1.一种发光二极管封装体的制造方法,包括以下步骤:
提供具有电极的基板;
提供发光二极管,将所述发光二极管放置在所述基板上,并使发光二极管的电极与基板上的电极贴设;
提供紫外光固化胶,使所述紫外光固化胶分布在所述基板上并包覆所述发光二极管,固化所述紫外光固化胶,并通过紫外光固化胶的固化而实现发光二极管与基板的电极导电连接及发光二极管相对于基板的固定。
2.如权利要求1所述的发光二极管封装体的制造方法,其特征在于:所述基板由具有良好的散热性能的硅、石墨、三氧化二铝、二氧化钛、陶瓷或金属制成。
3.如权利要求1所述的发光二极管封装体的制造方法,其特征在于:所述电极贯穿所述基板的上、下相对两表面,并且所述电极的上、下相对两端分别与所述基板的上、下相对两表面共面。
4.如权利要求1所述的发光二极管封装体的制造方法,其特征在于:还包括如下制程:提供一荧光粉层,并将所述荧光粉层设置在所述紫外光固化胶固化后形成的胶层的顶面。
5.如权利要求4所述的发光二极管封装体的制造方法,其特征在于:还包括如下制程:提供一光导出机构,并将所述光导出机构设置在所述荧光粉层的顶端。
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CN201310583729.1A CN104659191A (zh) | 2013-11-20 | 2013-11-20 | 发光二极管封装体的制造方法 |
US14/542,872 US20150140701A1 (en) | 2013-11-20 | 2014-11-17 | Method for manufacturing light emitting diode package |
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CN201310583729.1A CN104659191A (zh) | 2013-11-20 | 2013-11-20 | 发光二极管封装体的制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105226164A (zh) * | 2015-09-09 | 2016-01-06 | 南京光宝光电科技有限公司 | 白光led直接贴片式的封装结构 |
CN108224366A (zh) * | 2016-12-15 | 2018-06-29 | 松下知识产权经营株式会社 | 发光元件以及发光元件的制造方法 |
Families Citing this family (1)
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JP2018022844A (ja) * | 2016-08-05 | 2018-02-08 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
Citations (5)
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US20020066905A1 (en) * | 2000-06-20 | 2002-06-06 | Bily Wang | Wing-shaped surface mount package for light emitting diodes |
US20050006651A1 (en) * | 2003-06-27 | 2005-01-13 | Lockheed Martin Corporation | Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens |
CN101160670A (zh) * | 2005-03-29 | 2008-04-09 | 飞利浦拉米尔德斯照明设备有限责任公司 | 有利于背后照明的led广角发射透镜 |
US20090121252A1 (en) * | 2007-11-14 | 2009-05-14 | Hung-Tsung Hsu | Method for manufacturing flip-chip light emitting diode package |
US20100148211A1 (en) * | 2008-12-15 | 2010-06-17 | Everlight Electronics Co., Ltd. | Light emitting diode package structure |
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2013
- 2013-11-20 CN CN201310583729.1A patent/CN104659191A/zh active Pending
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2014
- 2014-11-17 US US14/542,872 patent/US20150140701A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020066905A1 (en) * | 2000-06-20 | 2002-06-06 | Bily Wang | Wing-shaped surface mount package for light emitting diodes |
US20050006651A1 (en) * | 2003-06-27 | 2005-01-13 | Lockheed Martin Corporation | Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens |
CN101160670A (zh) * | 2005-03-29 | 2008-04-09 | 飞利浦拉米尔德斯照明设备有限责任公司 | 有利于背后照明的led广角发射透镜 |
US20090121252A1 (en) * | 2007-11-14 | 2009-05-14 | Hung-Tsung Hsu | Method for manufacturing flip-chip light emitting diode package |
US20100148211A1 (en) * | 2008-12-15 | 2010-06-17 | Everlight Electronics Co., Ltd. | Light emitting diode package structure |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105226164A (zh) * | 2015-09-09 | 2016-01-06 | 南京光宝光电科技有限公司 | 白光led直接贴片式的封装结构 |
CN108224366A (zh) * | 2016-12-15 | 2018-06-29 | 松下知识产权经营株式会社 | 发光元件以及发光元件的制造方法 |
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Application publication date: 20150527 |