CN104659174A - Method for improving light emitting property of LED by using laser radiated gallium nitride epitaxial wafer as substrate of LED - Google Patents
Method for improving light emitting property of LED by using laser radiated gallium nitride epitaxial wafer as substrate of LED Download PDFInfo
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- CN104659174A CN104659174A CN201510065338.XA CN201510065338A CN104659174A CN 104659174 A CN104659174 A CN 104659174A CN 201510065338 A CN201510065338 A CN 201510065338A CN 104659174 A CN104659174 A CN 104659174A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 title claims abstract description 13
- 239000012298 atmosphere Substances 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 35
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000012360 testing method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 24
- 230000006872 improvement Effects 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 241001025261 Neoraja caerulea Species 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Led Devices (AREA)
Abstract
The invention discloses a method for improving the light emitting property of an LED by using a laser radiated gallium nitride epitaxial wafer as the substrate of the LED, and belongs to the field of material preparation. The method comprises the following steps: firstly, pretreating the GaN epitaxial wafer (the surface of the epitaxial wafer is of a p type) so as to remove pollution attachment, organic residues and the like on the surface and reducing the lattice imperfection of the surface; radiating the GaN epitaxial wafer by using a 248nm excimer laser with the single pulse energy density of 0.15J/cm<2> to 0.6J/cm<2>, depositing a metal electrode on the surface of a sample according to a magnetron sputtering method, and further performing electric testing on metal semiconductor ohmic contact such as the carrier concentration and the surface resistivity, the testing result shows that various electric properties of the radiated sample are remarkably changed, and thus the ohmic contact of the radiated sample is greatly improved. The GaN epitaxial wafer before or after being radiated is manufactured by using a progress LED process, the LED characteristic parameters such as the positive voltage, the negative leakage current and the light emission power of the LED are tested, and the result shows that the LED characteristic parameters are all improved to different extents.
Description
Technical field
The invention belongs to field of material preparation.
Background technology
The material such as gallium nitride, carborundum be the wide bandgap semiconductor of representative as the abundant brand-new material of a kind of physical characteristic, its many electrical and optical properties is all considerably beyond last generation semi-conducting material.Wide bandgap semiconductor plays with a very important position in mankind's Lighting Industry of more and more important position, particularly gallium nitride material in the productive life of present stage, has and apply very widely in illuminating LED device of new generation.
The energy gap of GaN material is direct band gap type, and at room temperature its energy gap is 3.39eV, belongs to wide bandgap semiconductor category, generally has higher quantum efficiency when Carrier recombination.GaN material is that direct band gap means its greater band gap, is applicable to very much for making indigo plant, green glow and ultraviolet light emitting device (such as LED) and ultraviolet detector device.Its electron saturation velocities, breakdown electric field, thermal conductivity, band gap are higher than Si and GaAs, so the photo-detector that can be used for charge coupled device, high-speed memory, high power device and require dark current lower.Certainly, the direct band gap material such as GaN can also make short wavelength's high power laser.Secondly, this kind of dielectric material intensity is high, is suitable for developing corresponding powerful amplifying device, switching device and diode.In addition, its relative dielectric constant is lower, can make millimeter wave amplifier series capacitance.These excellent specific properties, make it in high temperature, high frequency, photoelectron, high-power and radioresistance etc., have very large application potential.
GaN material has great performance improvement space.First, from the substrate angle of epitaxial growth of gallium nitride material, the most desirable substrate for GaN growth is GaN monocrystal material, if use its backing material as gallium nitride material growth greatly can improve the crystal mass of epitaxial film, reduce dislocation density, improve device operational lifetime, improve luminous efficiency, thus improve device operation current density.But preparation GaN body monocrystalline is very difficult, does not up to the present also have effective way.Nowadays be sapphire for the substrate that GaN growth is the most general, i.e. Al
2o
3.Its advantage is that chemical stability is good, does not absorb visible ray, moderate cost, manufacturing technology relative maturity.But the lattice mismatch of Sapphire Substrate and GaN material is comparatively large, cause in epitaxially grown GaN material Dislocations density comparatively large, affect the crystalline quality of material and much electricity and optical property.Just therefore, high-quality GaN material epitaxial growth is very difficult, and the development of its growing technology also slowly.Until after the nineties in 20th century, along with improving constantly of Material growth and device technology level, and the breakthrough of the employing of buffer layer technique and p-type doping techniques, just make GaN base material and epitaxially grown research thereof become unprecedentedly active, become the focus of current global semiconductor area research and investment.
Secondly, even if the nitrogen vacancy defect (V of the GaN crystal adopting various method to grow also inevitably mostly containing some
n), this can cause the GaN material of undoped to be n-type semiconductor, and background election concentration is 10
14-4x10
16cm
-3left and right, presents the situation of high conductance; And p-type GaN generally belongs to compensative material, and generally all use Mg element as acceptor doping impurity.Current controllable doped concentration is only 10
11-10
20cm
-3between.This means that the electric property of epitaxially grown p-type GaN material has larger room for promotion, and due to this electric property not fully up to expectations, to directly results in GaN material the luminescent properties of the LED being substrate not satisfactory, its light emergent power and electro-optical efficiency still can only be limited in lower level, and wherein electro-optical efficiency generally can only reach about 15%-20% in the industrial production.。
LED is the technical term of being abridged by each prefix of English light emitting diode, i.e. " Light-Emitting Diode ", it is the energy conversion device that electric energy converts luminous energy to, be a kind of in suitable forward bias lower semiconductor p-n junction energy spontaneous radiation a kind of device of luminescence.At present, the luminescent properties how improving with GaN the blue-ray LED being substrate is one of the academic focus in the whole world, and reason is exactly that the luminescent material research of blue-ray LED is started late, and its material property does not reach again the level of people's expection.
Laser technology is since appearance, and, controllability high, easy to operate with its energy is well not easily introduced the advantages such as pollution and be widely used in the research field such as fabrication of new materials, exposed material modification.Particularly along with the application of short wavelength's high-peak power lasers such as excimer laser, the cold worked thought of material is more and more important, the change of main research material physical property such as electricity, light, magnetic under laser irradiation, relates to the aspects such as semi-conducting material, dielectric material, high temperature superconducting materia and magnetic material.Use the method for excimer laser irradiation carry out surface modification superiority mainly contain the light output that laser has high-energy-density; Export energy density and pulse frequency and umber of pulse etc. parameter controllable precise; The alternative on process local area-specific surface and repeatability.The present invention proposes under different atmosphere and light pulse parameter, the method of laser irradiation is adopted to carry out irradiation to GaN epitaxy chip architecture, utilize irradiation atmosphere and the changeable and advantage of controllable precise of parameter, attempt different condition and parameter and improve the most obvious optimum configurations with the LED luminescent properties determining to make GaN epitaxy sheet electrical properties and be substrate with it.
Summary of the invention
The object of the present invention is to provide and a kind ofly under different irradiation atmosphere and irradiation parameters, improve GaN epitaxy sheet electrical properties and take GaN as the method for the every luminescent properties of LED of substrate.
The object of the invention is to be achieved through the following technical solutions:
1) gallium nitride epitaxial slice is immersed organic solvent ultrasonic cleaning after 5 minutes, rinse; Immerse spirit solvent ultrasonic cleaning after 5 minutes, rinse; Immerse deionized water for ultrasonic cleaning after 6-10 minute, rinse, dry;
2) by through step 1) the GaN epitaxy sheet sample that processed is placed on target platform, adjustment light path, and laser wavelength is 248nm;
3) adopt pulse laser single pulse energy metric density 0.15J/cm2-0.6J/cm2, frequency 3Hz-10Hz, umber of pulse is 60-120 irradiation sample.[0011] further, it is characterized in that gallium nitride epitaxial slice sample to be top layer be the multilayer epitaxial structure sample of p-type GaN film.
Further, it is characterized in that said laser is KrF excimer laser.
In above-mentioned steps 3) in, laser irradiation GaN epitaxy sheet carries out respectively under standard atmosphere, nitrogen and oxygen atmosphere.And by changing laser irradiation parameter (pulse energy density, irradiance pulse number, pulse frequency) with the luminescent properties of the LED after improvement gallium nitride electrical and optical properties in various degree and encapsulation under different atmosphere.
According to the sample that above process obtains, adopting the method for magnetron sputtering after sample surfaces deposit Ni (30nm)/Au (100nm) metal electrode, sample is carried out to the electrical testing of some metal semiconductor ohmic contact such as carrier concentration, surface resistivity.Result display in a nitrogen atmosphere, adopt the laser irradiation sample of suitable irradiation parameters that sample carrier concentration can be made at most to improve two orders of magnitude, and surface resistivity also reduces 1 order of magnitude simultaneously.
Gallium nitride epitaxial slice sample after the irradiation obtained according to above process, etch by cleaning, evaporation ITO, step (mesa) photoetching, ICP, remove photoresist, ITO alloy, HF acid cleaning, pattern electrodes (patterned pad) photoetching sputtered with Ti/Au, this step of low-power LED technological process such as stripping Ti/Au, alloy, probe station test, it is carried out to the test of LED luminescent properties, mainly contain the LED characterisitic parameters such as reverse leakage current, light emergent power, light output efficiency.
The present invention is the photochemistry and photochemical and thermal reaction that occur based on excimer laser and GaN semi-conducting material, causes the physical property of material surface to change when irradiation.Using the method for laser modification to have very large flexibility, best electricity and optical property can be had by making for the change of irradiation parameters and atmosphere the material after irradiation, and the luminescent properties of LED after encapsulation is had some improvement.
With existing the activity improvement of semiconductor technology, mainly rapid thermal annealing is compared, and the present invention has obvious novelty:
1. its technological operation of method of laser irradiation GaN epitaxy sheet is simple, the time cycle is short, laser irradiation parameter controllable precise and can process local area-specific surface.Farthest can be improved with the luminescent properties making the electrical and optical properties of sample and be packaged into LED by adjustment laser irradiation parameter with to the change of irradiation atmosphere.
2., after laser modification, the electrical and optical properties of sample improves obviously.And test combine with LED luminescence, is more the luminescent properties of the blue-ray LED of representative with gallium nitride based LED with lifting in conjunction with the practical problem of productive life.
3. adopt laser as high-energy irradiation source, laser power and pulse number less, technique is simple, and energy consumption is lower; Can complete irradiation in 1 minute, modification speed is fast.
4. adopt laser irradiation as the method for material modification, do not affect the material character of other structures under gallium nitride epitaxial slice top layer, do not produce environmental pollution.
Accompanying drawing explanation
Fig. 1 is the LED lamp bead pictorial diagram of gallium nitride epitaxial slice sample after LED technique, and wherein Fig. 1 (a) is LED lamp bead vertical view, and Fig. 1 (b) is LED lamp bead end view.
Wherein Fig. 2 (a) and Fig. 2 (b) are epitaxial wafer samples respectively after the laser irradiation of different irradiance power density and different pulse number, the situation of the reverse leakage current of the LED component after its encapsulation.The LED that the epitaxial wafer crossed through radiation treatment is made into can be seen, its reverse leakage current all comparatively predose has had and has reduced in various degree, illustrate encapsulation after LED electric property all comparatively predose make moderate progress, the improvement degree of different irradiation parameters is also different in addition, also illustrate that and can LED component be made by the method changing irradiation parameters to obtain best electrical properties.
Fig. 3 (a) and Fig. 3 (b) are epitaxial wafer samples respectively after the laser irradiation of different irradiance power density and different pulse number, the situation of change of the luminescent properties of the LED component after its encapsulation.Can see the LED light emergent power after irradiation all comparatively predose had obvious lifting, illustrate that the LED luminescent properties after the process of laser irradiation has all had raising in various degree compared with predose.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Embodiment 1:
Gallium nitride epitaxial slice glass cutter is cut into the square sample that each yardstick is about 1cm × 1cm size; Immerse acetone solvent ultrasonic cleaning after 5 minutes, rinse; Immerse spirit solvent ultrasonic cleaning after 5 minutes, rinse; After immersion deionized water for ultrasonic cleans 10 minutes, rinse, dry.To be placed on target platform through pretreated gallium nitride epitaxial slice, under air, oxygen, nitrogen environment, irradiation (air pressure is a standard atmospheric pressure) be carried out to it respectively by the excimer laser that wavelength is 248nm; Pulse laser frequency is 3Hz, and single pulse energy metric density is 0.5J/cm
2, umber of pulse is 90.Defocusing amount 4cm, uses compound eye structural to carry out shaping to shoot laser, acts on the facula area 1cm on sample
2, i.e. the square hot spot of 1cm × 1cm size.The sample obtained after predose all adopts the method for magnetron sputtering at sample surfaces deposit Ni (30nm)/Au (100nm) metal electrode.
The sample obtained through above-mentioned steps is carried out to the test of carrier concentration, surface resistivity and carrier mobility.Result shows that the ohmic contact characteristic on irradiated sample surface all can comparatively change by predose, in these several groups of data, under different irradiation atmosphere can be seen, all there is the change being different from predose in the electric property of above-mentioned three kinds of material surfaces, the degree of carrying out its electric property of sample improvement of irradiation at nitrogen atmosphere is maximum, this be attributable to single pulse energy or irradiance pulse number larger time, the too much oxide in surface generates not benefit and improves the electrical properties on its surface.
Embodiment 2:
Gallium nitride epitaxial slice glass cutter is cut into the square sample that each yardstick is about 1cm × 1cm size; Immerse acetone solvent ultrasonic cleaning after 5 minutes, rinse; Immerse spirit solvent ultrasonic cleaning after 5 minutes, rinse; After immersion deionized water for ultrasonic cleans 10 minutes, rinse, dry.To be placed on target platform through pretreated gallium nitride epitaxial slice, be that the excimer laser of 248nm carries out irradiation to it under atmospheric environment with wavelength; Pulse laser frequency is 3Hz, and single pulse energy metric density is 0.2-0.6J/cm
2, umber of pulse is 60,90,120.Defocusing amount 4cm, uses compound eye structural to carry out shaping to shoot laser, acts on the facula area 1cm on sample
2, i.e. the square hot spot of 1cm × 1cm size.Etch by cleaning, evaporation ITO, step (mesa) photoetching, ICP, remove photoresist, ITO alloy, HF acid cleaning, pattern electrodes (patterned pad) photoetching sputtered with Ti/Au, this step of low-power LED technological process such as stripping Ti/Au, alloy, probe station test, it is carried out to the test of LED luminescent properties, mainly contain the LED characterisitic parameters such as reverse leakage current, light emergent power, luminous efficiency.
Table 1 is carrier concentration, surface resistivity, the situation of change of carrier mobility under different irradiation atmosphere after predose.Under can seeing different irradiation atmosphere, all there is the change being different from predose in the electric property of above-mentioned three kinds of material surfaces, and the degree of its electric property improvement is maximum under a nitrogen.LED luminescent properties after the improvement of electric property can make encapsulation after irradiation changes.
Claims (5)
1. adopt laser irradiation gallium nitride epitaxial slice to improve a method for the LED luminescent properties being substrate with it, it is characterized in that, comprise the following steps:
1) gallium nitride epitaxial slice is immersed acetone solvent ultrasonic cleaning after 5 minutes, rinse; Immerse spirit solvent ultrasonic cleaning after 5 minutes, rinse; After immersion deionized water for ultrasonic cleans 10 minutes, rinse, dry;
2) by through step 1) the GaN epitaxy sheet sample that processed is placed on target platform, adjustment light path, and laser wavelength is 248nm;
3) pulse laser single pulse energy metric density 0.15J/cm is adopted
2-0.6J/cm
2, frequency 3Hz-10Hz, umber of pulse is 60-120 irradiation sample.
2. method according to claim 1, is characterized in that gallium nitride epitaxial slice sample to be top layer is the multilayer epitaxial structure sample of p-type GaN film.
3. method according to claim 1, is characterized in that said laser is KrF excimer laser.
4. method according to claim 1, it is characterized in that by changing laser pulse energy metric density, irradiance pulse number or pulse frequency, or change irradiation atmosphere change gallium nitride electrical properties, to improve with gallium nitride epitaxial slice the luminescent properties of the LED being substrate further.
5. method according to claim 1, is characterized in that said irradiation carries out respectively under standard atmosphere, nitrogen or oxygen atmosphere.
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| CN201510065338.XA CN104659174B (en) | 2015-02-08 | 2015-02-08 | It is a kind of to use laser to irradiate the method that gallium nitride epitaxial slice improves the LED luminescent properties with it as substrate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252216A (en) * | 2016-09-21 | 2016-12-21 | 中国科学院合肥物质科学研究院 | Use the method that laser irradiation gallium nitride epitaxial slice improves its ohmic contact characteristic |
| CN108054247A (en) * | 2017-12-15 | 2018-05-18 | 佛山东燊金属制品有限公司 | A kind of improvement GaN epitaxy piece property simultaneously enhances the method for GaN base LED luminescent properties |
| CN109585326A (en) * | 2018-12-10 | 2019-04-05 | 大连芯冠科技有限公司 | The vertical leakage current of gallium nitride epitaxial slice and Hall effect composite test method |
| CN116532808A (en) * | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | Method for locally changing carrier concentration on surface of inorganic nonmetallic material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945898A (en) * | 2012-11-23 | 2013-02-27 | 广州市众拓光电科技有限公司 | Aluminum nitride (AIN) thin film growing on Ag substrate and preparation method and application thereof |
-
2015
- 2015-02-08 CN CN201510065338.XA patent/CN104659174B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945898A (en) * | 2012-11-23 | 2013-02-27 | 广州市众拓光电科技有限公司 | Aluminum nitride (AIN) thin film growing on Ag substrate and preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| X.C.WANG, ET AL: "Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN", 《APPLIED SURFACE SCIENCE》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252216A (en) * | 2016-09-21 | 2016-12-21 | 中国科学院合肥物质科学研究院 | Use the method that laser irradiation gallium nitride epitaxial slice improves its ohmic contact characteristic |
| CN108054247A (en) * | 2017-12-15 | 2018-05-18 | 佛山东燊金属制品有限公司 | A kind of improvement GaN epitaxy piece property simultaneously enhances the method for GaN base LED luminescent properties |
| CN109585326A (en) * | 2018-12-10 | 2019-04-05 | 大连芯冠科技有限公司 | The vertical leakage current of gallium nitride epitaxial slice and Hall effect composite test method |
| CN109585326B (en) * | 2018-12-10 | 2022-11-22 | 大连芯冠科技有限公司 | Compound testing method for vertical leakage current and Hall effect of gallium nitride epitaxial wafer |
| CN116532808A (en) * | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | Method for locally changing carrier concentration on surface of inorganic nonmetallic material |
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| Publication number | Publication date |
|---|---|
| CN104659174B (en) | 2017-06-20 |
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