CN104659065A - Semiconductor organic light emitting diode display device and manufacturing method thereof - Google Patents
Semiconductor organic light emitting diode display device and manufacturing method thereof Download PDFInfo
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- CN104659065A CN104659065A CN201510053149.0A CN201510053149A CN104659065A CN 104659065 A CN104659065 A CN 104659065A CN 201510053149 A CN201510053149 A CN 201510053149A CN 104659065 A CN104659065 A CN 104659065A
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Abstract
The invention discloses a semiconductor organic light emitting diode display device which comprises a base plate, organic light emitting elements and a packaging part, wherein the organic light emitting elements are positioned on the base plate and comprise an organic light emitting diode, a thin film transistor and a connecting circuit; the packaging part covers the organic light emitting elements and is combined with the base plate. The semiconductor organic light emitting diode display device is rapid in operation speed, high in definition, relatively long in service life, low in cost, high in light emission efficiency and relatively low operation voltage. The invention further discloses a method for manufacturing the semiconductor organic light emitting diode display device.
Description
Technical field
The present invention relates to light emitting semiconductor device display field, be specifically related to a kind of semiconductor light emitting display unit comprising Semiconductor Organic light-emitting diode and film crystal tube drive circuit, and the manufacture method of this display unit.
Background technology
Along with the high speed development of light emitting semiconductor device technology, semiconductor light emitting display device technology is constantly ripe, also becomes the major product on market gradually.But current developed semiconductor light emitting display unit exists that the speed of service is slow, poor definition, the problems such as useful life of product is lower, thus letter above problem to be solved.
Summary of the invention
The object of the present invention is to provide that a kind of speed of service is fast, definition is high and the Semiconductor Organic light emitting display device that the useful life of product is longer, this display unit cost is low, has high-luminous-efficiency and lower operating voltage.
The present invention relates to a kind of Semiconductor Organic light emitting display device, comprising: substrate; Be positioned at the organic illuminating element on this substrate; Cover described organic illuminating element and the encapsulation part combined with substrate.Wherein, described organic illuminating element includes OLED, thin-film transistor and connecting circuit.The anode tap of described Organic Light Emitting Diode connects supply voltage VSS, cathode terminal connects the source electrode of the first film transistor, the drain electrode of this first film transistor connects the source electrode of the second thin-film transistor, the drain electrode of this second thin-film transistor connects the first end of the first capacity cell, and the drain electrode of this second thin-film transistor is connected supply voltage VDD with the first end of this first capacity cell simultaneously, second end of this first capacity cell is connected with the gate electrode of this first film transistor and the first end of the second capacity cell simultaneously, second end of this second capacity cell is connected with the drain electrode of the 3rd thin-film transistor, the source electrode of the 3rd thin-film transistor is connected from different data wires respectively with gate electrode.Wherein, described Organic Light Emitting Diode comprises: anode; Be positioned at the hole injection layer on anode, also dry to form hole injection layer by the aqueous solution of Polyglycolic acid fibre mixing polystyrolsulfon acid being applied on anode; Be positioned at the hole transmission layer on hole injection layer, it is formed by fluorinated polyethylene base carbazole; Be positioned at the luminescent layer on hole transmission layer, by using 60 % by weight as the polyvinyl (2 of host material, 7-difluoro carbazole), 10 % by weight as [two (4 of blue phosphorescent luminescent material, 6-difluorophenyl)-pyridine root conjunction-N, C2 '] pyridine carboxylic acid close iridium and 30 % by weight as 1 of electron transport material, 3-bis-[(4-tert-butyl-phenyl)-1,3,4-oxadiazole] the benzene solution that to be dissolved in the organic solvent of toluene preparation to be applied on hole transmission layer and dry to be formed; Be positioned at the electron transfer layer on luminescent layer; Be positioned at the electron injecting layer on electron transfer layer; Be positioned at the negative electrode on electron injecting layer; The HOMO energy level of its hole-transporting layer is between the HOMO energy level of luminescent layer HOMO energy level and anode or hole injection layer, and the LOMO energy level of electron transfer layer is between the LOMO energy level of luminescent layer LOMO energy level and negative electrode or electron injecting layer.Described first, second, third thin-film transistor is bottom gate thin film transistor, comprising: substrate; Be formed in the gate electrode on substrate; Be formed in the gate insulation layer on gate electrode; Be formed in the organic semiconductor layer on gate insulation layer; Be formed in the source electrode on organic semiconductor layer and drain electrode.The gate insulation layer of this first, second thin-film transistor makes its cut-in voltage VON meet: the relation of VON≤VDD × C1/ (C1+C2), wherein, C1 represents the electric capacity of the first capacity cell, and C2 represents the electric capacity of the second capacity cell.This encapsulation part possesses the organic layer and inorganic layer that are arranged alternately, respectively the thickness of this organic layer is identical, respectively the identical and thickness of this organic layer of the thickness of this inorganic layer is greater than the thickness of this inorganic layer, and what all arrange apart from this substrate and this organic illuminating element position recently and farthest is inorganic layer.
In Semiconductor Organic light emitting display device of the present invention, described anode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd.
In Semiconductor Organic light emitting display device of the present invention, described negative electrode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd.
In Semiconductor Organic light emitting display device of the present invention, the thickness of described gate insulation layer is 50-500nm.
In Semiconductor Organic light emitting display device of the present invention, on the anode of Organic Light Emitting Diode, deposition hales electronic molecules layer, forms complete dipole layer, then is haling each functional layer electronic molecules layer being sequentially formed with respectively OLED.
In Semiconductor Organic light emitting display device of the present invention, described in hale electronic molecules layer material be ten hexafluoro CuPcs.
The present invention also provides a kind of manufacture method of Semiconductor Organic light emitting display device, comprising: provide substrate; The organic illuminating element be positioned on this substrate is provided; There is provided and cover described organic illuminating element and the encapsulation part combined with substrate.Wherein, described organic illuminating element includes OLED, thin-film transistor and connecting circuit.The anode tap of described Organic Light Emitting Diode connects supply voltage VSS, cathode terminal connects the source electrode of the first film transistor, the drain electrode of this first film transistor connects the source electrode of the second thin-film transistor, the drain electrode of this second thin-film transistor connects the first end of the first capacity cell, and the drain electrode of this second thin-film transistor is connected supply voltage VDD with the first end of this first capacity cell simultaneously, second end of this first capacity cell is connected with the gate electrode of this first film transistor and the first end of the second capacity cell simultaneously, second end of this second capacity cell is connected with the drain electrode of the 3rd thin-film transistor, the source electrode of the 3rd thin-film transistor is connected from different data wires respectively with gate electrode.Wherein, described Organic Light Emitting Diode comprises: anode; Be positioned at the hole injection layer on anode, also dry to form hole injection layer by the aqueous solution of Polyglycolic acid fibre mixing polystyrolsulfon acid being applied on anode; Be positioned at the hole transmission layer on hole injection layer, it is formed by fluorinated polyethylene base carbazole; Be positioned at the luminescent layer on hole transmission layer, by using 60 % by weight as the polyvinyl (2 of host material, 7-difluoro carbazole), 10 % by weight as [two (4 of blue phosphorescent luminescent material, 6-difluorophenyl)-pyridine root conjunction-N, C2 '] pyridine carboxylic acid close iridium and 30 % by weight as 1 of electron transport material, 3-bis-[(4-tert-butyl-phenyl)-1,3,4-oxadiazole] the benzene solution that to be dissolved in the organic solvent of toluene preparation to be applied on hole transmission layer and dry to be formed; Be positioned at the electron transfer layer on luminescent layer; Be positioned at the electron injecting layer on electron transfer layer; Be positioned at the negative electrode on electron injecting layer; The HOMO energy level of its hole-transporting layer is between the HOMO energy level of luminescent layer HOMO energy level and anode or hole injection layer, and the LOMO energy level of electron transfer layer is between the LOMO energy level of luminescent layer LOMO energy level and negative electrode or electron injecting layer.Described first, second, third thin-film transistor is bottom gate thin film transistor, comprising: substrate; Be formed in the gate electrode on substrate; Be formed in the gate insulation layer on gate electrode; Be formed in the organic semiconductor layer on gate insulation layer; Be formed in the source electrode on organic semiconductor layer and drain electrode.The gate insulation layer of this first, second thin-film transistor makes its cut-in voltage VON meet: the relation of VON≤VDD × C1/ (C1+C2), wherein, C1 represents the electric capacity of the first capacity cell, and C2 represents the electric capacity of the second capacity cell.This encapsulation part possesses the organic layer and inorganic layer that are arranged alternately, respectively the thickness of this organic layer is identical, respectively the identical and thickness of this organic layer of the thickness of this inorganic layer is greater than the thickness of this inorganic layer, and what all arrange apart from this substrate and this organic illuminating element position recently and farthest is inorganic layer.
In the manufacture method of Semiconductor Organic light emitting display device of the present invention, described anode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd.
In the manufacture method of Semiconductor Organic light emitting display device of the present invention, described negative electrode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd.
In the manufacture method of Semiconductor Organic light emitting display device of the present invention, the thickness of described gate insulation layer is 50-500nm.
In the manufacture method of Semiconductor Organic light emitting display device of the present invention, on the anode of Organic Light Emitting Diode, deposition hales electronic molecules layer, form complete dipole layer, then hale each functional layer electronic molecules layer being sequentially formed with respectively OLED.
In the manufacture method of Semiconductor Organic light emitting display device of the present invention, described in hale electronic molecules layer material be ten hexafluoro CuPcs.
Accompanying drawing illustrates:
Accompanying drawing 1 is the circuit connection diagram of the elements such as Organic Light Emitting Diode, thin-film transistor, electric capacity;
Accompanying drawing 2 is the structure chart of Organic Light Emitting Diode.
Embodiment
Embodiment 1
The invention provides a kind of manufacture method of Semiconductor Organic light emitting display device, comprising: substrate is provided; The organic illuminating element be positioned on this substrate is provided; There is provided and cover described organic illuminating element and the encapsulation part combined with substrate.Wherein, described organic illuminating element includes OLED, thin-film transistor and connecting circuit.Anode 11 end of described Organic Light Emitting Diode connects supply voltage VSS, negative electrode 17 end connects the source electrode of the first film transistor T1, the drain electrode of this first film transistor T1 connects the source electrode of the second thin-film transistor T2, the drain electrode of this second thin-film transistor T2 connects the first end of the first capacity cell C1, and the drain electrode of this second thin-film transistor T2 is connected supply voltage VDD with the first end of this first capacity cell C1 simultaneously, second end of this first capacity cell C1 is connected with the gate electrode of this first film transistor T1 and the first end of the second capacity cell C2 simultaneously, second end of this second capacity cell C2 is connected with the drain electrode of the 3rd thin-film transistor T3, the source electrode of the 3rd thin-film transistor T3 is connected from different data wires respectively with gate electrode.Wherein, described Organic Light Emitting Diode comprises: anode; Be positioned at the hole injection layer 12 on anode 11, also dry to form hole injection layer 12 by the aqueous solution of Polyglycolic acid fibre mixing polystyrolsulfon acid being applied on anode 11; Be positioned at the hole transmission layer 13 on hole injection layer 12, it is formed by fluorinated polyethylene base carbazole; Be positioned at the luminescent layer 14 on hole transmission layer 13, by using 60 % by weight as the polyvinyl (2 of host material, 7-difluoro carbazole), 10 % by weight as [two (4 of blue phosphorescent luminescent material, 6-difluorophenyl)-pyridine root conjunction-N, C2 '] pyridine carboxylic acid close iridium and 30 % by weight as 1 of electron transport material, 3-bis-[(4-tert-butyl-phenyl)-1,3,4-oxadiazole] the benzene solution that to be dissolved in the organic solvent of toluene preparation to be applied on hole transmission layer 13 and dry to be formed; Be positioned at the electron transfer layer 15 on luminescent layer 14; Be positioned at the electron injecting layer 16 on electron transfer layer 15; Be positioned at the negative electrode 17 on electron injecting layer 16; The HOMO energy level of its hole-transporting layer 13 is between luminescent layer 14 HOMO energy level and the HOMO energy level of anode 11 or hole injection layer 12, and the LOMO energy level of electron transfer layer is between luminescent layer 14 LOMO energy level and the LOMO energy level of negative electrode 17 or electron injecting layer 16.Described first, second, third thin-film transistor is bottom gate thin film transistor, comprising: substrate; Be formed in the gate electrode on substrate; Be formed in the gate insulation layer on gate electrode; Be formed in the organic semiconductor layer on gate insulation layer; Be formed in the source electrode on organic semiconductor layer and drain electrode.The gate insulation layer of this first, second thin-film transistor makes its cut-in voltage VON meet: the relation of VON≤VDD × C1/ (C1+C2), wherein, C1 represents the electric capacity of the first capacity cell, and C2 represents the electric capacity of the second capacity cell.This encapsulation part possesses the organic layer and inorganic layer that are arranged alternately, respectively the thickness of this organic layer is identical, respectively the identical and thickness of this organic layer of the thickness of this inorganic layer is greater than the thickness of this inorganic layer, and what all arrange apart from this substrate and this organic illuminating element position recently and farthest is inorganic layer.
Wherein, described anode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd; Described negative electrode 17 is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd; The thickness of described gate insulation layer is 50-500nm; On the anode of Organic Light Emitting Diode, deposition hales electronic molecules layer, forms complete dipole layer, then is haling each functional layer electronic molecules layer being sequentially formed with respectively OLED; The described material haling electronic molecules layer is ten hexafluoro CuPcs.
Embodiment 2
The present invention relates to a kind of Semiconductor Organic light emitting display device, comprising: substrate; Be positioned at the organic illuminating element on this substrate; Cover described organic illuminating element and the encapsulation part combined with substrate.Wherein, described organic illuminating element includes OLED, thin-film transistor and connecting circuit.Anode 11 end of described Organic Light Emitting Diode connects supply voltage VSS, negative electrode 17 end connects the source electrode of the first film transistor T1, the drain electrode of this first film transistor T1 connects the source electrode of the second thin-film transistor T2, the drain electrode of this second thin-film transistor T2 connects the first end of the first capacity cell C1, and the drain electrode of this second thin-film transistor T2 is connected supply voltage VDD with the first end of this first capacity cell C1 simultaneously, second end of this first capacity cell C1 is connected with the gate electrode of this first film transistor T1 and the first end of the second capacity cell C2 simultaneously, second end of this second capacity cell C2 is connected with the drain electrode of the 3rd thin-film transistor T3, the source electrode of the 3rd thin-film transistor T3 is connected from different data wires respectively with gate electrode.Wherein, described Organic Light Emitting Diode comprises: anode 11; Be positioned at the hole injection layer 12 on anode 11, also dry to form hole injection layer 12 by the aqueous solution of Polyglycolic acid fibre mixing polystyrolsulfon acid being applied on anode 11; Be positioned at the hole transmission layer 13 on hole injection layer 12, it is formed by fluorinated polyethylene base carbazole; Be positioned at the luminescent layer 14 on hole transmission layer 13, by using 60 % by weight as the polyvinyl (2 of host material, 7-difluoro carbazole), 10 % by weight as [two (4 of blue phosphorescent luminescent material, 6-difluorophenyl)-pyridine root conjunction-N, C2 '] pyridine carboxylic acid close iridium and 30 % by weight as 1 of electron transport material, 3-bis-[(4-tert-butyl-phenyl)-1,3,4-oxadiazole] the benzene solution that to be dissolved in the organic solvent of toluene preparation to be applied on hole transmission layer 13 and dry to be formed; Be positioned at the electron transfer layer 15 on luminescent layer 14; Be positioned at the electron injecting layer 16 on electron transfer layer 15; Be positioned at the negative electrode 17 on electron injecting layer 16; The HOMO energy level of its hole-transporting layer 13 is between luminescent layer 14 HOMO energy level and the HOMO energy level of anode 11 or hole injection layer 12, and the LOMO energy level of electron transfer layer 15 is between luminescent layer 14 LOMO energy level and the LOMO energy level of negative electrode 17 or electron injecting layer 16.Described first, second, third thin-film transistor is bottom gate thin film transistor, comprising: substrate; Be formed in the gate electrode on substrate; Be formed in the gate insulation layer on gate electrode; Be formed in the organic semiconductor layer on gate insulation layer; Be formed in the source electrode on organic semiconductor layer and drain electrode.The gate insulation layer of this first, second thin-film transistor makes its cut-in voltage VON meet: the relation of VON≤VDD × C1/ (C1+C2), wherein, C1 represents the electric capacity of the first capacity cell, and C2 represents the electric capacity of the second capacity cell.This encapsulation part possesses the organic layer and inorganic layer that are arranged alternately, respectively the thickness of this organic layer is identical, respectively the identical and thickness of this organic layer of the thickness of this inorganic layer is greater than the thickness of this inorganic layer, and what all arrange apart from this substrate and this organic illuminating element position recently and farthest is inorganic layer.
Wherein, described anode 11 is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd; Described negative electrode 17 is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd; The thickness of described gate insulation layer is 50-500nm; On the anode 11 of Organic Light Emitting Diode, deposition hales electronic molecules layer, forms complete dipole layer, then is haling each functional layer electronic molecules layer being sequentially formed with respectively OLED; The described material haling electronic molecules layer is ten hexafluoro CuPcs.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.
Claims (10)
1. a Semiconductor Organic light emitting display device, comprising:
Substrate;
Be positioned at the organic illuminating element on this substrate;
Cover described organic illuminating element and the encapsulation part combined with substrate: possess the organic layer and inorganic layer that are arranged alternately, respectively the thickness of this organic layer is identical, respectively the identical and thickness of this organic layer of the thickness of this inorganic layer is greater than the thickness of this inorganic layer, and what all arrange apart from this substrate and this organic illuminating element position recently and farthest is inorganic layer;
It is characterized in that, be positioned at the organic illuminating element on this substrate, comprise:
Organic Light Emitting Diode, comprising: anode; Be positioned at the hole injection layer on anode, also dry to form hole injection layer by the aqueous solution of Polyglycolic acid fibre mixing polystyrolsulfon acid being applied on anode; Be positioned at the hole transmission layer on hole injection layer, it is formed by fluorinated polyethylene base carbazole; Be positioned at the luminescent layer on hole transmission layer, by using 60 % by weight as the polyvinyl (2 of host material, 7-difluoro carbazole), 10 % by weight as [two (4 of blue phosphorescent luminescent material, 6-difluorophenyl)-pyridine root conjunction-N, C2 '] pyridine carboxylic acid close iridium and 30 % by weight as 1 of electron transport material, 3-bis-[(4-tert-butyl-phenyl)-1,3,4-oxadiazole] the benzene solution that to be dissolved in the organic solvent of toluene preparation to be applied on hole transmission layer and dry to be formed; Be positioned at the electron transfer layer on luminescent layer; Be positioned at the electron injecting layer on electron transfer layer; Be positioned at the negative electrode on electron injecting layer; The HOMO energy level of its hole-transporting layer is between the HOMO energy level of luminescent layer HOMO energy level and anode or hole injection layer, and the LOMO energy level of electron transfer layer is between the LOMO energy level of luminescent layer LOMO energy level and negative electrode or electron injecting layer;
The first film transistor, the second thin-film transistor, the 3rd thin-film transistor, the first capacity cell, the second capacity cell, described first, second, third thin-film transistor is bottom gate thin film transistor, comprising: substrate; Be formed in the gate electrode on substrate; Be formed in the gate insulation layer on gate electrode, the gate insulation layer of this first, second, third thin-film transistor makes its cut-in voltage VON meet: the relation of VON≤VDD × C1/ (C1+C2), wherein, represent the electric capacity of the first capacity cell, represent the electric capacity of the second capacity cell; Be formed in the organic semiconductor layer on gate insulation layer; Be formed in the source electrode on organic semiconductor layer and drain electrode;
And connecting circuit, comprise: the cathode terminal of described Organic Light Emitting Diode connects supply voltage VSS, anode tap connects the source electrode of the first film transistor, the drain electrode of this first film transistor connects the source electrode of the second thin-film transistor, the drain electrode of this second thin-film transistor connects the first end of the first capacity cell, and the drain electrode of this second thin-film transistor is connected supply voltage VDD with the first end of this first capacity cell simultaneously, second end of this first capacity cell is connected with the gate electrode of this first film transistor and the first end of the second capacity cell simultaneously, second end of this second capacity cell is connected with the drain electrode of the 3rd thin-film transistor, the source electrode of the 3rd thin-film transistor is connected from different data wires respectively with gate electrode.
2. Semiconductor Organic light emitting display device according to claim 1, it is characterized in that, described anode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd, and described negative electrode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd.
3. Semiconductor Organic light emitting display device according to claim 1, is characterized in that, the thickness of described gate insulation layer is 50-500nm.
4. Semiconductor Organic light emitting display device according to claim 1, it is characterized in that, also deposit on the anode of Organic Light Emitting Diode and hale electronic molecules layer, form complete dipole layer, then hale each functional layer electronic molecules layer being sequentially formed with respectively OLED.
5. Semiconductor Organic light emitting display device according to claim 1, is characterized in that, described in hale electronic molecules layer material be ten hexafluoro CuPcs.
6. a manufacture method for Semiconductor Organic light emitting display device, comprises the following steps:
Substrate is provided;
The organic illuminating element be positioned on this substrate is provided;
There is provided and cover described organic illuminating element and the encapsulation part combined with substrate: possess the organic layer and inorganic layer that are arranged alternately, respectively the thickness of this organic layer is identical, respectively the identical and thickness of this organic layer of the thickness of this inorganic layer is greater than the thickness of this inorganic layer, and what all arrange apart from this substrate and this organic illuminating element position recently and farthest is inorganic layer;
It is characterized in that, the organic illuminating element be positioned on this substrate provided, comprising:
Organic Light Emitting Diode, comprising: anode; Be positioned at the hole injection layer on anode, also dry to form hole injection layer by the aqueous solution of Polyglycolic acid fibre mixing polystyrolsulfon acid being applied on anode; Be positioned at the hole transmission layer on hole injection layer, it is formed by fluorinated polyethylene base carbazole; Be positioned at the luminescent layer on hole transmission layer, by using 60 % by weight as the polyvinyl (2 of host material, 7-difluoro carbazole), 10 % by weight as [two (4 of blue phosphorescent luminescent material, 6-difluorophenyl)-pyridine root conjunction-N, C2 '] pyridine carboxylic acid close iridium and 30 % by weight as 1 of electron transport material, 3-bis-[(4-tert-butyl-phenyl)-1,3,4-oxadiazole] the benzene solution that to be dissolved in the organic solvent of toluene preparation to be applied on hole transmission layer and dry to be formed; Be positioned at the electron transfer layer on luminescent layer; Be positioned at the electron injecting layer on electron transfer layer; Be positioned at the negative electrode on electron injecting layer; The HOMO energy level of its hole-transporting layer is between the HOMO energy level of luminescent layer HOMO energy level and anode or hole injection layer, and the LOMO energy level of electron transfer layer is between the LOMO energy level of luminescent layer LOMO energy level and negative electrode or electron injecting layer;
The first film transistor, the second thin-film transistor, the 3rd thin-film transistor, described first, second, third thin-film transistor is bottom gate thin film transistor, comprising: substrate; Be formed in the gate electrode on substrate; Be formed in the gate insulation layer on gate electrode, the gate insulation layer of this first, second, third thin-film transistor makes its cut-in voltage VON meet: the relation of VON≤VDD × C1/ (C1+C2), wherein, C1 represents the electric capacity of the first capacity cell, and C2 represents the electric capacity of the second capacity cell; Be formed in the organic semiconductor layer on gate insulation layer; Be formed in the source electrode on organic semiconductor layer and drain electrode;
And connecting circuit, comprise: the cathode terminal of described Organic Light Emitting Diode connects supply voltage VSS, anode tap connects the source electrode of the first film transistor, the drain electrode of this first film transistor connects the source electrode of the second thin-film transistor, the drain electrode of this second thin-film transistor connects the first end of the first capacity cell, and the drain electrode of this second thin-film transistor is connected supply voltage VDD with the first end of this first capacity cell simultaneously, second end of this first capacity cell is connected with the gate electrode of this first film transistor and the first end of the second capacity cell simultaneously, second end of this second capacity cell is connected with the drain electrode of the 3rd thin-film transistor, the source electrode of the 3rd thin-film transistor is connected from different data wires respectively with gate electrode.
7. the manufacture method of Semiconductor Organic light emitting display device according to claim 6, it is characterized in that, described anode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd, and described negative electrode is formed by a certain in ITO, IZO, Pt, Ir, Ni or Pd.
8. the manufacture method of Semiconductor Organic light emitting display device according to claim 6, is characterized in that, the thickness of described gate insulation layer is 50-500nm.
9. the manufacture method of Semiconductor Organic light emitting display device according to claim 6, it is characterized in that, also on the anode of Organic Light Emitting Diode, deposition hales electronic molecules layer, form complete dipole layer, then hale each functional layer electronic molecules layer being sequentially formed with respectively OLED.
10. the manufacture method of Semiconductor Organic light emitting display device according to claim 6, described in hale electronic molecules layer material be ten hexafluoro CuPcs.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20100000126A (en) * | 2008-06-24 | 2010-01-06 | 엘지디스플레이 주식회사 | Organic light emitting display and method for fabricating the same |
| CN102629449A (en) * | 2012-04-12 | 2012-08-08 | 四川虹视显示技术有限公司 | Pixel circuit structure of organic light emitting diode panel |
| CN204538031U (en) * | 2015-02-03 | 2015-08-05 | 沈阳理工大学 | A kind of Semiconductor Organic light emitting display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100000126A (en) * | 2008-06-24 | 2010-01-06 | 엘지디스플레이 주식회사 | Organic light emitting display and method for fabricating the same |
| CN102629449A (en) * | 2012-04-12 | 2012-08-08 | 四川虹视显示技术有限公司 | Pixel circuit structure of organic light emitting diode panel |
| CN204538031U (en) * | 2015-02-03 | 2015-08-05 | 沈阳理工大学 | A kind of Semiconductor Organic light emitting display device |
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