CN104658975A - Wafer cutting method - Google Patents
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- CN104658975A CN104658975A CN201310580868.9A CN201310580868A CN104658975A CN 104658975 A CN104658975 A CN 104658975A CN 201310580868 A CN201310580868 A CN 201310580868A CN 104658975 A CN104658975 A CN 104658975A
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Abstract
The invention relates to a wafer cutting method which is used under the condition at least with a carrier carrying a wafer and doing X axial feed movement, and a first cutting mechanism and a second cutting mechanism which do Y-Z axial feed movement to cut the wafer on the carrier. The first cutting mechanism is equipped with a first blade on a first rotating shaft, and the second cutting mechanism is equipped with a second blade on a second rotating shaft. The first rotating shaft and the second rotating shaft are slightly arranged in a straight line, and the first blade and the second blade are arranged oppositely. Therefore, when the carrier carries the wafer to do X axial feed movement, a step in which the first cutting mechanism and the second cutting mechanism synchronously go up and down to synchronously cut first cutting regions at the two sides of the wafer through non-equidirectional shift feed is performed first, and then a step in which the first cutting mechanism and the second cutting mechanism moves along the Y axis to a second cutting region corresponding to the middle position of the wafer and synchronously go up and down to synchronously cut the wafer through equidirectional shift feed is performed. Therefore, the cutting capacity is effectively improved.
Description
Technical field
The present invention relates to one and can do synchronization lifting and complete synchronization cutting to wafer, and then effectively promote the method for cutting wafer of cutting production capacity.
Background technology
TaiWan, China patent application No. 87110593 precision cutting device and cutting process Patent Case, which propose the topping machanism of multiple double-pole, refer to shown in Fig. 1, it is the guiding basal disc 10 being provided with gate on board, the pair of guide rails 11 of a Y-axis is equipped in the side of this guiding basal disc 10, first screw rod 12 and the second screw rod 13, first screw rod 12 and the second screw rod 13 also can respectively by motors 14, 15 drive rotation, first cutting mechanism 21 and the second cutting mechanism 22, be supported on guide rail 11 with hanging state, and be screwed on the first screw rod 12 and the second screw rod 13 separately, the first screw rod 12 and the second screw rod 13 is utilized to drive, and can respectively at Y-axis index feed, first cutting mechanism 21 is equipped with the first spindle assemblies 211 of tool rotating shaft in Y-axis and is arranged on the first blade 212 of the first spindle assemblies 211 front end, second cutting mechanism 22 is equipped with the second spindle assemblies 221 of tool rotating shaft in Y-axis and is arranged on the second blade 222 of the second spindle assemblies 221 front end, and make this first spindle assemblies 211 and the second spindle assemblies 221 slightly in a straight line, second blade 222 and the first blade 212 are then in a straight line in relative setting, another first cutting mechanism 21 is equipped with the motor 213 that control first spindle assemblies 211 makes Z-motion, second cutting mechanism 22 is then equipped the motor 223 that control second spindle assemblies 221 makes Z-motion, and make the first spindle assemblies 211 and the second spindle assemblies 221 can independently move to adjust the degree of depth of cutting in Z-axis direction.Guiding the blank part 16 of basal disc 10, the chuck platform 30 can doing X axis feeding and rotation is provided with in the direction perpendicular to guiding basal disc 10, this chuck platform 30 is for carrying wafer, making chuck platform 30 when doing X axis feeding, cutting operation can be carried out by the second blade 222 pairs of wafers of the first blade 212 of the first cutting mechanism 21 and the second cutting mechanism 22.
Refer to Fig. 2 A, Fig. 2 B, Fig. 2 C and Fig. 3 A, Fig. 3 B, Fig. 3 C, it is the first cutting process of topping machanism shown in Fig. 1, first as shown in Figure 2 A, first blade 212 is the side portion being positioned in semiconductor crystal wafer 31, second 222, blade is positioned in the central portion of semiconductor crystal wafer 31, decline the first cutting mechanism 21 and the second cutting mechanism 22, make chuck platform 30 move in X-direction simultaneously, and the line of cut (as shown in Figure 3A) of X axis can be cut respectively in the side portion of semiconductor crystal wafer 31 and central portion by the first blade 212 and the second blade 222 simultaneously.Then as shown in 2B, 2C, first cutting mechanism 21 and the second cutting mechanism 22 are made equidistant Y-axis index feed, and maintain the first blade 212 and the second blade 222 at identical interval, when chuck platform 30 remakes X axis feeding, can as shown in Fig. 3 B, Fig. 3 C, on semiconductor crystal wafer 31, interval cuts the line of cut of X axis.But this cutting process has to have very large problem, refer to Fig. 4 A, wafer 31 before cutting, be fixed with a mucous layer 33 on a metal framework 32, wafer 31 adheres on this mucous layer 33 again, and wafer 31 can be moved by framework 32, because the first spindle assemblies 211 and the second spindle assemblies 221 are in a straight line, therefore the first blade 212 and the second blade 222 should be positioned on identical X axis position, when the second blade 222 is positioned in the central portion of semiconductor crystal wafer 31, first blade 212 should be positioned in be same as the second blade 222X axial location (anterior position of semiconductor crystal wafer 31 side portion), when wafer 31 does X axis feeding, if the first blade 212 and the second blade 222 synchronously decline, first blade 212 that is bound to can be cut to framework 32, therefore the first blade 212 and the second blade 22 must do asynchronous lifting, also namely as shown in Figure 4 B, first blade 212 could must decline after framework 32 is by its lower cutter position, afterwards, second time is cut, third time cuts, cut for 4th time between the first blade 212 and the second blade 222, the relative point in time of lower cutter will be more complicated, and then cause wayward problem of carrying out cutting because of asynchronous lifting.
Refer to Fig. 5 A, Fig. 5 B, Fig. 5 C and Fig. 6 A, Fig. 6 B, Fig. 6 C, it is the second cutting process of topping machanism shown in Fig. 1, first as shown in Figure 5A, first blade 212 and the second blade 222 are the Y-axis dual side-edge portions being positioned in semiconductor crystal wafer 31, decline the first cutting mechanism 21 and the second cutting mechanism 22, make chuck platform 30 move in X-direction simultaneously, and the line of cut (as shown in Figure 6A) of X axis can be cut simultaneously respectively by the first blade 212 and the second blade 222 in the dual side-edge portion of semiconductor crystal wafer 31.Then as shown in Figure 5 B, first cutting mechanism 21 and the second cutting mechanism 22 are made the equidistant Y-axis index feed of relative direction, when chuck platform 30 remakes X axis feeding, can as shown in Figure 6B, from the outer line of cut cutting X axis toward interior interval on semiconductor crystal wafer 31.This cutting process due to the first blade 212 symmetrical identical in the lower cutter point position of X axis with the second blade 22, and the first blade 212 and the second blade 22 can be made to make synchronization lifting, but, described in its specification, in fact the front end of the first blade 212 and the second blade 222 is provided with the flange etc. that blade is fixed, and blade utilizes blade cover and covers, therefore, must reserve to separate the first cutting mechanism 21 and the second cutting mechanism 22 at the central portion (not forming the part of cutting slot in as Fig. 5 B) of semiconductor crystal wafer 31, otherwise the first cutting mechanism 21 and the second cutting mechanism 22 will be done relative direction feeding and produce the situation of collision, with that must be as shown in Figure 5 C, because the space of the central portion reserved area of this semiconductor crystal wafer 31 also cannot provide the first cutting mechanism 21 and the second cutting mechanism 22 to do relative direction feeding, also synchro-feed that accommodation first cutting mechanism 21 and the second cutting mechanism 22 make equidirectional cannot be provided (because making the synchro-feed of equidirectional, the first cutting mechanism 21 or the second cutting mechanism 22 must be first made to do the movement of Y-axis, and the movement that arbitrary cutting mechanism makes Y-axis will directly strike another cutting mechanism), therefore a wherein cutting mechanism must first be exited, cut separately by an other cutting mechanism, to be cut by the first blade 212 for example separately, can as shown in Figure 6 C, interval complete on semiconductor crystal wafer 31 cuts the line of cut of X axis.This second cutting process, due in last semiconductor crystal wafer 31 central portion reserved area, cut separately with a cutting mechanism, and cannot continue to do synchronous cutting, therefore the cutting way of the single blade of this part can have influence on whole stock-removing efficiency.
Refer to Fig. 7 A, Fig. 7 B, Fig. 7 C and Fig. 8 A, Fig. 8 B, Fig. 8 C, it is the third cutting process of topping machanism shown in Fig. 1, first as shown in Figure 7 A, in first cutting mechanism 21 and the second cutting mechanism 22 minimum zone that convergence extremely can not clash into mutually, and make the first blade 212 and the second blade 22 be positioned in the central portion of the axial minimum zone of semiconductor crystal wafer 31Y, decline the first cutting mechanism 21 and the second cutting mechanism 22, make chuck platform 30 move in X-direction simultaneously, and the line of cut (as shown in Figure 8 A) of X axis can be cut by the first blade 212 and the second blade 222 at the central portion of semiconductor crystal wafer 31 respectively simultaneously.Then as shown in Figure 7 B, first cutting mechanism 21 and the second cutting mechanism 22 are made the equidistant Y-axis index feed of rightabout, when chuck platform 30 remakes X axis feeding, as shown in Figure 8 B, semiconductor crystal wafer 31 can be cut by interior interval outward the line of cut of X axis.This cutting process due to the first blade 212 symmetrical identical in the lower cutter point position of X axis with the second blade 22, and the first blade 212 and the second blade 22 can be made to make synchronization lifting, but, as previously mentioned, the central portion (as do not formed the part of cutting slot in Fig. 7 B) of this semiconductor crystal wafer 31 is minimum zones that the first cutting mechanism 21 and the second cutting mechanism 22 are avoided clashing into, because the central portion space of this semiconductor crystal wafer 31 also cannot provide the first cutting mechanism 21 and the second cutting mechanism 22 to do relative direction feeding, also synchro-feed that accommodation first cutting mechanism 21 and the second cutting mechanism 22 make equidirectional cannot be provided (because making the synchro-feed of equidirectional, the first cutting mechanism 21 or the second cutting mechanism 22 must be first made to do the movement of Y-axis, and the movement that arbitrary cutting mechanism makes Y-axis will directly strike another cutting mechanism), therefore with that must be as seen in figure 7 c, first exit a wherein cutting mechanism, cut separately by an other cutting mechanism, to be cut by the first blade 212 for example separately, can as shown in Figure 8 C, interval complete on semiconductor crystal wafer 31 cuts the line of cut of X axis.This third cutting process, owing to cutting separately with a cutting mechanism at last semiconductor crystal wafer 31 central portion, and cannot continue to do synchronous cutting, therefore the cutting way of the single blade of this part also can have influence on whole stock-removing efficiency.
In view of this, the present inventor is engaged in research and development and the making experience of relevant industries then for many years with it, for the problems faced further investigation of current institute, through long-term endeavour research with study, eventually grind and create one two blades can be utilized simultaneously to do synchronization lifting, and wafer is made to the cutting method of complete synchronous cutting, effectively to promote cutting production capacity, this is design aim of the present invention.
Summary of the invention
For the deficiencies in the prior art, the object of the invention is to: a kind of method for cutting wafer is provided, be to utilize two blades to do synchronization lifting simultaneously, and the cutting method of complete synchronous cutting done to wafer, effectively to promote cutting production capacity.
For achieving the above object, the technical solution used in the present invention is:
A kind of method for cutting wafer, it is characterized in that: it at least has a carrying wafer and the microscope carrier doing X axis feeding movement for being used in, and make Y-Z axial feed and move the first cutting mechanism and the second cutting mechanism to carry out cutting operation to the wafer on this microscope carrier, this first cutting mechanism is equiped with the first blade in the first rotating shaft, this second cutting mechanism is equiped with the second blade in the second rotating shaft, this first rotating shaft and the second rotating shaft slightly in a linear array, and make the first blade and the second blade be relative setting; This cutting method includes:
Non-ly move apart from feeding step in the same way: the cutting operation being the first cutting area of wafer two sidepiece, first blade and the second blade are positioned at the avris of the Y-axis of wafer two sidepiece by it, and in Y-axis, make relative direction move apart from feeding, microscope carrier carrying wafer do X axis feeding move time, on this first cutting area, in the mode of synchronization lifting synchronous cutting, from the outer line of cut cutting X axis toward interior interval;
Move apart from feeding step in the same way: the cutting operation being second cutting area in wafer center portion, it moves the first cutting mechanism and the second cutting mechanism the second cutting area to wafer center portion, and make the first blade and the second blade lay respectively on two interval locations of this second cutting area, and in Y-axis, make equidirectional move apart from feeding, microscope carrier carrying wafer do X axis feeding move time, on this second cutting area, in the mode of synchronization lifting synchronous cutting, interval cuts the line of cut of X axis in the same way.
A kind of method for cutting wafer, it is characterized in that: it at least has a carrying wafer and the microscope carrier doing X axis feeding movement for being used in, and make Y-Z axial feed and move the first cutting mechanism and the second cutting mechanism to carry out cutting operation to the wafer on this microscope carrier, this first cutting mechanism is equiped with the first blade in the first rotating shaft, this second cutting mechanism is equiped with the second blade in the second rotating shaft, this first rotating shaft and the second rotating shaft slightly in a linear array, and make the first blade and the second blade be relative setting; This cutting method includes:
Non-ly move apart from feeding step in the same way: the cutting operation being the first cutting area of wafer two sidepiece, first blade and the second blade are positioned on two side positions of the nearly central portion of the first cutting area of wafer two sidepiece by it, and do rightaboutly to move apart from feeding in Y-axis, microscope carrier carrying wafer do X axis feeding move time, on this first cutting area, in the mode of synchronization lifting synchronous cutting, cut the line of cut of X axis by interior interval outward;
Move apart from feeding step in the same way: the cutting operation being second cutting area in wafer center portion, it moves the first cutting mechanism and the second cutting mechanism the second cutting area to wafer center portion, and make the first blade and the second blade lay respectively on two interval locations of this second cutting area, and in Y-axis, make equidirectional move apart from feeding, microscope carrier carrying wafer do X axis feeding move time, on this second cutting area, in the mode of synchronization lifting synchronous cutting, interval cuts the line of cut of X axis in the same way.
In preferably technical scheme, also can increase following technical characteristic:
Second cutting area in this wafer center portion, when referring to that the first blade or the second blade are positioned at crystal circle center's foremost position, another blade synchronously declines in wafer center portion and is not cut to the maximum magnitude of framework.
First cutting area of this wafer two sidepiece, refers to two sidepieces of wafer beyond the second cutting area.
This moves in the same way and moves the first cutting mechanism apart from feeding step and make the first blade be positioned at the center of second cutting area in wafer center portion, and the second blade of the second cutting mechanism is then positioned on the interval location of the second cutting area avris in wafer center portion.
Compared with prior art, the beneficial effect that the present invention has is: provide a kind of method for cutting wafer, a carrying wafer is at least had and the microscope carrier doing X axis feeding movement for being used in, and do Y-axis feeding and move the first cutting mechanism and the second cutting mechanism to carry out cutting operation to the wafer on this microscope carrier, this first cutting mechanism is equiped with the first blade in the first rotating shaft, this second cutting mechanism is equiped with the second blade in the second rotating shaft, this first rotating shaft and the second rotating shaft slightly present a linear array, and make the first blade and the second blade be relative setting, make microscope carrier carry wafer and do X axis feeding when moving, this first cutting mechanism and the second cutting mechanism can be utilized in the mode of synchronization lifting synchronous cutting, carry out the cutting operation of wafer, and then reach the Practical Benefit effectively promoting cutting production capacity.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of TaiWan, China No. 87110593 Patent Case topping machanism;
Fig. 2 A ~ Fig. 2 C is the action schematic diagram of TaiWan, China No. 87110593 Patent Case cutting process one;
Fig. 3 A ~ Fig. 3 C is the schematic diagram of Fig. 2 A ~ Fig. 2 C at the round-formed cutting slot of semiconductor die;
Fig. 4 A ~ Fig. 4 B is the explanation schematic diagram of TaiWan, China No. 87110593 Patent Case cutting process one;
Fig. 5 A ~ Fig. 5 C is the action schematic diagram of TaiWan, China No. 87110593 Patent Case cutting process two;
Fig. 6 A ~ Fig. 6 C is the schematic diagram of Fig. 5 A ~ Fig. 5 C at the round-formed cutting slot of semiconductor die;
Fig. 7 A ~ Fig. 7 C is the action schematic diagram of TaiWan, China No. 87110593 Patent Case cutting process three;
Fig. 8 A ~ Fig. 8 C is the schematic diagram of Fig. 7 A ~ Fig. 7 C at the round-formed cutting slot of semiconductor die;
Fig. 9 is the schematic diagram of the topping machanism that the present invention applies;
Figure 10 is the schematic diagram of the wafer that the present invention applies;
Figure 11 A ~ Figure 11 D is the action schematic diagram of cutting process one of the present invention;
Figure 12 A ~ Figure 12 D is that Figure 11 A ~ Figure 11 D forms the schematic diagram of cutting slot at wafer;
Figure 13 A ~ Figure 13 D is the action schematic diagram of cutting process two of the present invention;
Figure 14 A ~ Figure 14 D is that Figure 13 A ~ Figure 13 D forms the schematic diagram of cutting slot at wafer.
Description of reference numerals:
Existing part: 10-guides basal disc; 11-guide rail; 12-first screw rod; 13-second screw rod; 14-motor; 15-motor; 16-blank part; 21-first cutting mechanism; 211-first spindle assemblies; 212-first blade; 213-motor; 22-second cutting mechanism; 221-second spindle assemblies; 222-second blade; 223-motor; 30-chuck platform; 31-wafer;
The present invention's part:
40-microscope carrier; 41-first cutting mechanism; 411-first rotating shaft; 412-first blade; 42-second cutting mechanism; 421-second rotating shaft; 422-second blade; 50-wafer; 51-framework; S1-first cutting area S2-second cutting area.
Embodiment
For making your juror further understand the present invention, hereby lifting preferred embodiment and coordinating graphic, describing in detail as rear:
Refer to Fig. 9, the invention provides a kind of method for cutting wafer, a carrying wafer is at least had and the microscope carrier 40 doing X axis feeding movement for being used in, and make Y-Z axial feed and move the first cutting mechanism 41 and the second cutting mechanism 42 to carry out cutting operation to the wafer on this microscope carrier 40, this first cutting mechanism 41 is equiped with the first blade 412 in the first rotating shaft 411, this second cutting mechanism 42 is equiped with the second blade 422 in the second rotating shaft 421, this first rotating shaft 411 and the second rotating shaft 421 are slightly in a linear array, and make the first blade 412 and the second blade 422 in relative setting, microscope carrier 40 carry wafer do X axis feeding move time, the first cutting mechanism 41 and the second cutting mechanism 42 pairs of wafers can be utilized to carry out cutting operation.
The invention provides a kind of method for cutting wafer, first, can be learnt by Fig. 4 A, Fig. 4 B of background technology, wafer adheres on a mucous layer, mucous layer is fixed on a metal framework again, because the first spindle assemblies 211 and the second spindle assemblies 221 are in a straight line, therefore the lower cutter position of the first blade 212 and the second blade 222 is positioned on identical X axis position, under such basic condition, the first cutting process of this background technology is in order to avoid being cut to metal framework, and the first blade 212 and the second blade 22 just must do asynchronous lifting.As for the second or the third cutting process of this background technology, although the first stage can make synchronization lifting synchronous cutting, but second stage be then limited to the first blade 212 and the second blade 222 too convergence can cause the problem of shock, and must cut with hilted broadsword, cannot continue and carry out synchronous cutting.First the present invention is analyzed by the position, pass of framework and wafer, refer to Figure 10, suppose the first blade 412 wafer 50 center O point foremost as under cutter point, so with second rotating shaft 421 of the first rotating shaft 411 slightly in a linear array, the second blade 422 on it be not cut to the maximum magnitude location point of metal framework 51, the position of left side P point will be dropped on, also namely the first blade 412 and the second blade 422 respectively O point and P point make can safety synchronously descend cutter, relative, we also can find the Q point with cutter under O point secure synchronization on right side, also in wafer 50 regional extent namely between P point and Q point, first blade 412 and the second blade 422 are the lower cuttves can making synchronization lifting, and metal framework 51 can not be cut to, and wafer 50 regional extent between this P point and Q point claims is the second cutting area S2, also when namely this second cutting area S2 refers to that the first blade 412 or the second blade 422 are positioned at crystal circle center's foremost position, another blade synchronously declines in wafer center portion and is not cut to the maximum magnitude of metal framework 51, that two sidepieces of wafer 50 except the second cutting area S2 then claim is the first cutting area S1.
The first method for cutting wafer of the present invention, refer to Figure 11 A, Figure 11 B, Figure 11 C, Figure 11 D and Figure 12 A, Figure 12 B, Figure 12 C, Figure 12 D, first non-synchronous cutting step of moving in the same way apart from feeding is carried out to the first cutting area S1 of wafer two sidepiece, as Figure 11 A, shown in Figure 12 A, first blade 412 and the second blade 422 are the avris of the Y-axis being positioned in wafer 50 2 sidepiece, do after X axis feeding moves when microscope carrier 40 carries wafer 50, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, and the line of cut (as illustrated in fig. 12) of X axis can be cut respectively in the dual side-edge portion of wafer 50 by the first blade 412 and the second blade 422 simultaneously.Then as shown in Figure 11 B, that the first cutting mechanism 41 and the second cutting mechanism 42 are made relative direction moves distance feeding, in the present embodiment, first cutting mechanism 41 and the second cutting mechanism 42 are in the mode of equidistantly movement in Y-axis, that makes relative direction moves distance feeding, do after X axis feeding moves when microscope carrier 40 carries wafer 50 again, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, can as shown in Figure 12 B, on the first cutting area S1 of wafer 50, in the mode of synchronization lifting synchronous cutting, from the outer line of cut cutting X axis toward interior interval.Then the synchronous cutting step apart from feeding is moved in the same way in the second cutting area S2 in wafer center portion, as shown in Figure 11 C, mobile first cutting mechanism 41 and the second cutting mechanism 42 to the second cutting area S2, and make the first blade 412 and the second blade 422 lay respectively on two interval locations of the second cutting area S2 in wafer center portion, in the present embodiment, mobile first cutting mechanism 41 makes the first blade 412 be positioned at the center of the second cutting area S2 in wafer center portion, 422, second blade of the second cutting mechanism 42 is positioned at the avris of the second cutting area S2 in wafer center portion, do after X axis feeding moves when microscope carrier 40 carries wafer 50, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, and the line of cut (as indicated in fig. 12 c) of X axis can be cut by the first blade 412 and the second blade 422 at the second cutting area S2 of wafer 50 central portion respectively simultaneously.Then as shown in figure D11, that the first cutting mechanism 41 and the second cutting mechanism 42 are made equidirectional moves distance feeding, in the present embodiment, first cutting mechanism 41 and the second cutting mechanism 42 are in the mode of equidistantly movement in Y-axis, that makes equidirectional moves distance feeding, do after X axis feeding moves when microscope carrier 40 carries wafer 50 again, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, can as indicated in fig. 12d, on the second cutting area S2 of wafer 50, in the mode of synchronization lifting synchronous cutting, interval cuts the line of cut of X axis in the same way, and then complete interval cuts the line of cut of X axis on wafer 50.This first cutting process, due to the first blade 412 and the second blade 422 can be made in the mode of synchronization lifting synchronous cutting, carries out the cutting operation that wafer 50 is whole, therefore effectively promotes whole cutting production capacity.
The second method for cutting wafer of the present invention, refer to Figure 13 A, Figure 13 B, Figure 13 C, Figure 13 D and Figure 14 A, Figure 14 B, Figure 14 C, Figure 14 D, first non-synchronous cutting step of moving in the same way apart from feeding is carried out to the first cutting area S1 of wafer two sidepiece, as Figure 13 A, shown in Figure 14 A, first blade 412 and the second blade 422 are positioned on two side positions of the nearly central portion of the first cutting area S1 of wafer 50 2 sidepiece, do after X axis feeding moves when microscope carrier 40 carries wafer 50, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, and the line of cut (as shown in Figure 14 A) of X axis can be cut by the first blade 412 and the second blade 422 at the nearly central portion of wafer 50 first cutting area S1 respectively simultaneously.Then as shown in Figure 13 B, first cutting mechanism 41 and the second cutting mechanism 42 are done rightaboutly move apart from feeding, in the present embodiment, first cutting mechanism 41 and the second cutting mechanism 42 are in the mode of equidistantly movement in Y-axis, do rightaboutly to move apart from feeding, do after X axis feeding moves when microscope carrier 40 carries wafer 50 again, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, can as shown in Figure 14B, on the first cutting area S1 of wafer 50, in the mode of synchronization lifting synchronous cutting, cut the line of cut of X axis by interior interval outward.Then the synchronous cutting step apart from feeding is moved in the same way in the second cutting area S2 in wafer center portion, as shown in fig. 13 c, mobile first cutting mechanism 41 and the second cutting mechanism 42 to the second cutting area S2, and make the first blade 412 and the second blade 422 lay respectively on two interval locations of the second cutting area S2 in wafer center portion, in the present embodiment, mobile first cutting mechanism 41 makes the first blade 412 be positioned at the center of the second cutting area S2 in wafer center portion, 422, second blade of the second cutting mechanism 42 is positioned at the avris of the second cutting area S2 in wafer center portion, do after X axis feeding moves when microscope carrier 40 carries wafer 50, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, and the line of cut (as shown in Figure 14 C) of X axis can be cut by the first blade 412 and the second blade 422 at the second cutting area S2 of wafer 50 central portion respectively simultaneously.Then as illustrated in figure 13d, that the first cutting mechanism 41 and the second cutting mechanism 42 are made equidirectional moves distance feeding, in the present embodiment, first cutting mechanism 41 and the second cutting mechanism 42 are in the mode of equidistantly movement in Y-axis, that makes equidirectional moves distance feeding, do after X axis feeding moves when microscope carrier 40 carries wafer 50 again, synchronous decline first cutting mechanism 41 and the second cutting mechanism 42, can as shown in fig. 14d, on the second cutting area S2 of wafer 50, in the mode of synchronization lifting synchronous cutting, interval cuts the line of cut of X axis in the same way, and then complete interval cuts the line of cut of X axis on wafer 50.This second cutting process, because identical makes the first blade 412 and the second blade 422 in the mode of synchronization lifting synchronous cutting, carries out the cutting operation that wafer 50 is whole, therefore effectively promotes whole cutting production capacity.
More than illustrate just illustrative for the purpose of the present invention; and nonrestrictive, those of ordinary skill in the art understand, when not departing from the spirit and scope that claim limits; many amendments, change or equivalence can be made, but all will fall within protection scope of the present invention.
Claims (5)
1. a method for cutting wafer, it is characterized in that: it at least has a carrying wafer and the microscope carrier doing X axis feeding movement for being used in, and make Y-Z axial feed and move the first cutting mechanism and the second cutting mechanism to carry out cutting operation to the wafer on this microscope carrier, this first cutting mechanism is equiped with the first blade in the first rotating shaft, this second cutting mechanism is equiped with the second blade in the second rotating shaft, this first rotating shaft and the second rotating shaft slightly in a linear array, and make the first blade and the second blade be relative setting; This cutting method includes:
Non-ly move apart from feeding step in the same way: the cutting operation being the first cutting area of wafer two sidepiece, first blade and the second blade are positioned at the avris of the Y-axis of wafer two sidepiece by it, and in Y-axis, make relative direction move apart from feeding, microscope carrier carrying wafer do X axis feeding move time, on this first cutting area, in the mode of synchronization lifting synchronous cutting, from the outer line of cut cutting X axis toward interior interval;
Move apart from feeding step in the same way: the cutting operation being second cutting area in wafer center portion, it moves the first cutting mechanism and the second cutting mechanism the second cutting area to wafer center portion, and make the first blade and the second blade lay respectively on two interval locations of this second cutting area, and in Y-axis, make equidirectional move apart from feeding, microscope carrier carrying wafer do X axis feeding move time, on this second cutting area, in the mode of synchronization lifting synchronous cutting, interval cuts the line of cut of X axis in the same way.
2. a method for cutting wafer, it is characterized in that: it at least has a carrying wafer and the microscope carrier doing X axis feeding movement for being used in, and make Y-Z axial feed and move the first cutting mechanism and the second cutting mechanism to carry out cutting operation to the wafer on this microscope carrier, this first cutting mechanism is equiped with the first blade in the first rotating shaft, this second cutting mechanism is equiped with the second blade in the second rotating shaft, this first rotating shaft and the second rotating shaft slightly in a linear array, and make the first blade and the second blade be relative setting; This cutting method includes:
Non-ly move apart from feeding step in the same way: the cutting operation being the first cutting area of wafer two sidepiece, first blade and the second blade are positioned on two side positions of the nearly central portion of the first cutting area of wafer two sidepiece by it, and do rightaboutly to move apart from feeding in Y-axis, microscope carrier carrying wafer do X axis feeding move time, on this first cutting area, in the mode of synchronization lifting synchronous cutting, cut the line of cut of X axis by interior interval outward;
Move apart from feeding step in the same way: the cutting operation being second cutting area in wafer center portion, it moves the first cutting mechanism and the second cutting mechanism the second cutting area to wafer center portion, and make the first blade and the second blade lay respectively on two interval locations of this second cutting area, and in Y-axis, make equidirectional move apart from feeding, microscope carrier carrying wafer do X axis feeding move time, on this second cutting area, in the mode of synchronization lifting synchronous cutting, interval cuts the line of cut of X axis in the same way.
3. method for cutting wafer according to claim 1 and 2, it is characterized in that: second cutting area in this wafer center portion, when referring to that the first blade or the second blade are positioned at crystal circle center's foremost position, another blade synchronously declines in wafer center portion and is not cut to the maximum magnitude of framework.
4. method for cutting wafer according to claim 3, is characterized in that: the first cutting area of this wafer two sidepiece, refers to two sidepieces of wafer beyond the second cutting area.
5. method for cutting wafer according to claim 1 and 2, it is characterized in that: this moves in the same way and moves the first cutting mechanism apart from feeding step and make the first blade be positioned at the center of second cutting area in wafer center portion, and the second blade of the second cutting mechanism is then positioned on the interval location of the second cutting area avris in wafer center portion.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109016195A (en) * | 2018-09-12 | 2018-12-18 | 江苏英锐半导体有限公司 | Processing unit (plant) is used in a kind of wafer flow production |
| CN110211927A (en) * | 2019-06-13 | 2019-09-06 | 成都先进功率半导体股份有限公司 | A kind of chip cutting method |
| CN106206370B (en) * | 2015-05-29 | 2019-09-13 | 东和株式会社 | Manufacturing device and manufacturing method |
| CN114864391A (en) * | 2022-07-07 | 2022-08-05 | 苏州和研精密科技有限公司 | Chip processing method and chip cutting machine |
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| US20020104422A1 (en) * | 2001-02-07 | 2002-08-08 | Katsuharu Negishi | Dual-cutting method devoid of useless strokes |
| CN101001730A (en) * | 2001-05-05 | 2007-07-18 | 派美卡私人有限公司 | Bi-directional singulation system and method |
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| US20020104422A1 (en) * | 2001-02-07 | 2002-08-08 | Katsuharu Negishi | Dual-cutting method devoid of useless strokes |
| CN101001730A (en) * | 2001-05-05 | 2007-07-18 | 派美卡私人有限公司 | Bi-directional singulation system and method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206370B (en) * | 2015-05-29 | 2019-09-13 | 东和株式会社 | Manufacturing device and manufacturing method |
| CN109016195A (en) * | 2018-09-12 | 2018-12-18 | 江苏英锐半导体有限公司 | Processing unit (plant) is used in a kind of wafer flow production |
| CN110211927A (en) * | 2019-06-13 | 2019-09-06 | 成都先进功率半导体股份有限公司 | A kind of chip cutting method |
| CN110211927B (en) * | 2019-06-13 | 2021-08-24 | 成都先进功率半导体股份有限公司 | Chip cutting method |
| CN114864391A (en) * | 2022-07-07 | 2022-08-05 | 苏州和研精密科技有限公司 | Chip processing method and chip cutting machine |
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Application publication date: 20150527 |