CN104639921B - 双像素大小彩色影像传感器及其制造方法 - Google Patents
双像素大小彩色影像传感器及其制造方法 Download PDFInfo
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- CN104639921B CN104639921B CN201410643620.7A CN201410643620A CN104639921B CN 104639921 B CN104639921 B CN 104639921B CN 201410643620 A CN201410643620 A CN 201410643620A CN 104639921 B CN104639921 B CN 104639921B
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000003384 imaging method Methods 0.000 claims abstract description 106
- 230000035945 sensitivity Effects 0.000 claims abstract description 45
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000001429 visible spectrum Methods 0.000 claims description 17
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- 239000012530 fluid Substances 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims description 2
- 238000010276 construction Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
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- 230000003595 spectral effect Effects 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/076,823 | 2013-11-11 | ||
US14/076,823 US9147704B2 (en) | 2013-11-11 | 2013-11-11 | Dual pixel-sized color image sensors and methods for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104639921A CN104639921A (zh) | 2015-05-20 |
CN104639921B true CN104639921B (zh) | 2017-06-16 |
Family
ID=53043055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410643620.7A Active CN104639921B (zh) | 2013-11-11 | 2014-11-10 | 双像素大小彩色影像传感器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9147704B2 (zh) |
CN (1) | CN104639921B (zh) |
HK (1) | HK1205843A1 (zh) |
TW (1) | TWI567958B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9743015B2 (en) * | 2015-05-22 | 2017-08-22 | Samsung Electronics Co., Ltd. | Image capturing apparatus and method of controlling the same |
US9911773B2 (en) * | 2015-06-18 | 2018-03-06 | Omnivision Technologies, Inc. | Virtual high dynamic range large-small pixel image sensor |
WO2017169754A1 (ja) | 2016-03-29 | 2017-10-05 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
US10362246B2 (en) * | 2016-03-31 | 2019-07-23 | Sony Corporation | Solid-state image pickup device, method of driving the same, and electronic apparatus |
CN109286750B (zh) * | 2018-09-21 | 2020-10-27 | 重庆传音科技有限公司 | 一种基于智能终端的变焦方法及一种智能终端 |
CN111316634A (zh) * | 2018-12-28 | 2020-06-19 | 合刃科技(深圳)有限公司 | Hdr图像成像方法、装置及系统 |
WO2020227980A1 (zh) * | 2019-05-15 | 2020-11-19 | 合刃科技(深圳)有限公司 | 图像传感器、光强感知系统及方法 |
KR20220085542A (ko) * | 2020-12-15 | 2022-06-22 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
CN114584704A (zh) * | 2022-02-08 | 2022-06-03 | 维沃移动通信有限公司 | 拍摄方法、装置和电子设备 |
KR20230144810A (ko) * | 2022-04-08 | 2023-10-17 | 삼성전자주식회사 | 이미지 센서 및 차량 |
JP2024073899A (ja) * | 2022-11-18 | 2024-05-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1833429A (zh) * | 2003-06-11 | 2006-09-13 | 微米技术有限公司 | 双转换增益成像器 |
US7508421B2 (en) * | 2002-06-24 | 2009-03-24 | Fujifilm Corporation | Image pickup apparatus and image processing method |
CN101931756A (zh) * | 2009-06-19 | 2010-12-29 | 比亚迪股份有限公司 | 一种提高cmos图像传感器动态范围的装置和方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070018073A1 (en) * | 2005-07-22 | 2007-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor device with beehive pattern color sensor cell array |
JP5167799B2 (ja) * | 2007-12-18 | 2013-03-21 | ソニー株式会社 | 固体撮像装置およびカメラ |
US8405748B2 (en) * | 2010-07-16 | 2013-03-26 | Omnivision Technologies, Inc. | CMOS image sensor with improved photodiode area allocation |
US20120261730A1 (en) | 2011-04-15 | 2012-10-18 | Omnivision Technologies, Inc. | Floating diffusion structure for an image sensor |
-
2013
- 2013-11-11 US US14/076,823 patent/US9147704B2/en active Active
-
2014
- 2014-11-03 TW TW103138114A patent/TWI567958B/zh active
- 2014-11-10 CN CN201410643620.7A patent/CN104639921B/zh active Active
-
2015
- 2015-07-02 HK HK15106321.0A patent/HK1205843A1/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7508421B2 (en) * | 2002-06-24 | 2009-03-24 | Fujifilm Corporation | Image pickup apparatus and image processing method |
CN1833429A (zh) * | 2003-06-11 | 2006-09-13 | 微米技术有限公司 | 双转换增益成像器 |
CN101931756A (zh) * | 2009-06-19 | 2010-12-29 | 比亚迪股份有限公司 | 一种提高cmos图像传感器动态范围的装置和方法 |
Also Published As
Publication number | Publication date |
---|---|
US20150130010A1 (en) | 2015-05-14 |
TWI567958B (zh) | 2017-01-21 |
TW201523857A (zh) | 2015-06-16 |
CN104639921A (zh) | 2015-05-20 |
US9147704B2 (en) | 2015-09-29 |
HK1205843A1 (zh) | 2015-12-24 |
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