CN104624545A - Wafer washing device and method - Google Patents
Wafer washing device and method Download PDFInfo
- Publication number
- CN104624545A CN104624545A CN201510066846.XA CN201510066846A CN104624545A CN 104624545 A CN104624545 A CN 104624545A CN 201510066846 A CN201510066846 A CN 201510066846A CN 104624545 A CN104624545 A CN 104624545A
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- China
- Prior art keywords
- wafer
- cleaning fluid
- cleaning
- nozzle
- opening
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a wafer washing device and method. The wafer washing device comprises a platform. The platform is used for bearing a wafer. The wafer comprises a to-be-washed surface, a first spray nozzle and a second spray nozzle, wherein the first spray nozzle is arranged above the wafer, a first height exists between the first spray nozzle and the to-be-washed surface of the wafer, the second spray nozzle is located above the wafer, a second height exists between the second spray nozzle and the to-be-washed surface of the wafer, and the first height is smaller than the second height.
Description
The divisional application that the application is the applying date is on December 24th, 2009, application number is 200910266338.0, denomination of invention is the patent application of " wafer cleaner and wafer cleaning mode ".
Technical field
The present invention relates to a kind of wafer cleaner and cleaning way, especially relate to a kind of use the cleaning fluid of different in flow rate to rinse center wafer and wafer periphery respectively cleaning device and cleaning way.
Background technology
Semiconductor device experiences several process operation by semiconductor wafer and obtains.These operations include implantation of such as adulterating, gate oxide generation, interlayer dielectric layer formation, metallic deposition, line map patterning, etching operation, chemical machineryization grinding (CMP) etc.Usually after chemical machineryization grinding, etching or development of photoresist, it is remaining that wafer surface has residue, as chemical liquid composition or chemical polymerization thing, therefore, in order to keep the clean of wafer surface, needs suitably to bestow wafer to clean process.Normally utilize liquid sprayer, use a flushing liquid, as specific detergent remover or deionized water carry out the program of rinsing process, rest on chemical liquid composition on wafer or chemical polymerization thing to remove, and via rotation, the residue of wafer surface and flushing liquid are thrown away wafer surface.
Existing wafer cleaner includes a housing containing liquids spray appliance, and a liquid-supplying system includes multiple pipeline and is located at the multiple straight nozzle (straight nozzle) on the downside of it, and a drive unit is used for driving and sprays motion.But, existing cleaning device one side rotate wafer and one side from straight nozzle supply cleaning fluid to carry out the method cleaned, the cleaning fluid be positioned in peripheral wafer surface can be made to produce sinuous flow, cause the problem remained in by the material cleaning removal in center wafer in peripheral wafer surface, and produce defect or washmarking in wafer periphery.
Therefore the effect of this cleaning manufacture craft is caused to be had a greatly reduced quality, certainly will the related qualification rate having influence on follow-up every manufacture craft, be how to clean wafer completely, avoiding residue and defect and washmarking, is an instant important topic in fact.
Summary of the invention
According to a preferred embodiment of the present invention, the invention provides a kind of wafer cleaner, comprise: a platform, in order to carry a wafer, the top that wafer has a surface to be washed, a first jet is located at wafer, have one first height between aforesaid first jet and the surface to be washed of wafer and a second nozzle is located at the top of wafer, have one second height between second nozzle and the surface to be washed of wafer, wherein first is highly less than the second height.
According to another preferred embodiment of the present invention, the invention provides a kind of wafer cleaner, comprise: a platform, the top of wafer is located in order to carry a wafer and a nozzle, aforesaid nozzle comprises multiple opening, and wherein respectively the distance on a surface to be washed of this opening and aforesaid wafer changes relative to the position of wafer along with each this opening.
According to another preferred embodiment of the present invention, the invention provides a kind of wafer cleaning mode: first provide a wafer to comprise a surface to be washed and at least one nozzle is positioned at above wafer, then wafer is rotated, and rinse aforesaid surface to be washed by nozzles spray one cleaning fluid, nozzle has a spraying parameter, and spraying parameter is the function of nozzle relative to the position of wafer.
According to still another preferred embodiment of the present invention, the invention provides a kind of wafer cleaning mode: a kind of wafer cleaning mode: first, there is provided a wafer to comprise a surface to be washed and a nozzle to comprise multiple opening and be positioned at above wafer and rotate wafer, and respectively spray a cleaning fluid by each this opening and rinse surface to be washed, respectively this opening respectively has a spraying parameter, spraying parameter be respectively this opening relative to the function of the position of this wafer.
Feature of the present invention is that nozzle has a spraying parameter, this spraying parameter is nozzle relative to the function of the opening on the function of the position of wafer or nozzle relative to the position of wafer, for example, when nozzle position is in the horizontal direction different, the flow velocity of the cleaning fluid sprayed by each nozzle, the kind of cleaning fluid, cleaning fluid are not identical with one of them meeting of concentration of cleaning fluid with the ratio of gas and vapor permeation.Such as, when wafer enters cleaning, center wafer and nozzle that Waffer edge receives ejection cleaning fluid, its flow velocity is different, then cleaning fluid is after flushing residue, more successfully can leave wafer surface together with residue.
Accompanying drawing explanation
Fig. 1 is the wafer cleaner that the first preferred embodiment of the present invention illustrates;
Fig. 2 a, Fig. 2 b, Fig. 3 a, Fig. 3 b are the top view of wafer direction of rotation and cleaning fluid backwashing manner;
Fig. 4 is the wafer cleaner that the second preferred embodiment of the present invention illustrates;
Fig. 5 is the change type schematic diagram of the second embodiment of the present invention.
Main element symbol description
10,100 wafer cleaner 12,112 housings
14, cabin 16,116 platform in 114
18,118 wafer 20,120 surfaces to be washed
22 first carrier pipe 24 first jet
26 second carrier pipe 28 second nozzles
30 first cleaning fluid 32 second cleaning fluids
34 predetermined direction 36,136 gases
38 support 122 carrier pipes
124 nozzles 150,152, opening
154、156、
158
Detailed description of the invention
What Fig. 1 illustrated is the wafer cleaner that the first preferred embodiment according to the present invention illustrates.As shown in Figure 1, a wafer cleaner 10 comprises a housing 12, and it comprises cabin 14 in, is provided with a platform 16 in the bottom in interior cabin 14, and in order to carry and to rotate a wafer 18, wherein wafer 18 has one to be washed surperficial 20; The environment that interior cabin 14 can be temperature, pressure and other parameters is controlled or be an open space, and platform 16 can utilize vacuum attraction, electrostatic attraction or machinery to catch the mode of getting is fixed on platform 16 by wafer 18.One first carrier pipe 22, be located at the upside in interior cabin 14, one first jet 24 is located at the end of the first carrier pipe 22 and the top at closer wafer 18 center, one second carrier pipe 26, also be located at the upside in interior cabin 14, a second nozzle 28 be located at the second carrier pipe 26 end and relatively comparatively first jet 24 away from wafer 18 center.There is between first jet 24 and to be washed surperficial 20 of wafer 18 one first height D
1; There is between second nozzle 28 and to be washed surperficial 20 of wafer one second height D
2, it should be noted that: the first height D
1be less than the second height D
2, preferably, the first height D
1comparatively the second height D
2little 1 centimeter, thus, the fluid sprayed at both has under identical flow velocity, can make one first cleaning fluid 30 sprayed by first jet 24, and one second cleaning fluid 32 sprayed compared with second nozzle 28 first arrives to be washed surperficial 20.The surface residue of wafer 18 core can first be washed open by the first cleaning fluid 30, then, second cleaning fluid 32 rinses the part at wafer 18 edge, and wafer 18 periphery can be taken to by the surface residue that the first cleaning fluid 30 is washed open in wafer 18 center, recycling wafer 18 rotates the centrifugal force caused and is thrown away together with cleaning fluid by residue.In addition, in order to strengthen cleaning performance, by the mode of pressurization, more public liter/min of the flow velocity of the first cleaning fluid 30 large compared with the flow velocity of the second cleaning fluid 32 0.1 can be made.Although the first carrier pipe 22 and the second carrier pipe 26 supply first jet 24 and second nozzle 28 respectively in this embodiment, first jet 24 can supply identical cleaning fluid by identical carrier pipe with second nozzle 28 in other embodiments of the invention.
Fig. 2 a, Fig. 2 b are the top views of the wafer direction of rotation that illustrates of the first preferred embodiment according to the present invention and cleaning fluid backwashing manner.As shown in Fig. 1 and Fig. 2 a, Fig. 2 b, one first spray area A can be formed when the first cleaning fluid 30 sprays
1to be washed surperficial 20 of cover part, and one second spray area A can be formed when the second cleaning fluid 32 sprays
2to be washed surperficial 20, first spray area A of cover part
1a is sprayed with second
2the large I of area adjusts individually independently.Preferably in situation, the first spray area A
1with the second spray area A
2for being staggered front to back setting, that is, the first spray area A
1with the second spray area A
2not at the same Radius of wafer 18.In addition, the first spray area A
1also cover around the center of circle simultaneously.When wafer 18 rotates, the first spray area A
1can after wafer 18 revolve and turn around, form a circular first cleaning surface B on the wafer 18
1, and the second spray area A
2the second cleaning surface B that formation one is annular on the wafer 18
2.
When cleaning, wafer 18 can to a predetermined direction 34, such as clockwise or be rotated counterclockwise, when, upon rotating, wafer 18 to be washed surperficial 20 on a set point Q can first through the first spray area A
1, then through the second spray area A
2.The object of design like this to allow wafer 18 when rotated, is positioned at each point on same radius on wafer 18, and the point at closer wafer 18 center first can be rinsed by the first cleaning fluid 30 compared with from the point away from wafer 18 center.Afterwards, the residue at wafer 18 center mixes the first cleaning fluid 30 and to flow along the direction of centrifugal force a segment distance, then, residue and the first cleaning fluid 30 can be taken to wafer 18 periphery by the second cleaning fluid 32 of subsequent rinse, so, namely the flow direction of the first cleaning fluid 30 and the second cleaning fluid 32 can not form turbulent flow, successfully residue can be thrown away wafer 18 surface.
First cleaning fluid 30 and the second cleaning fluid 32 can be identical or different cleaning fluids, and the first cleaning fluid 30 and the second cleaning fluid 32 independently can be selected from deionized water, ammoniacal liquor or other chemical cleaning solution.First cleaning fluid 30 can first mix with a gas 36 before ejection, and such as, with nitrogen or carbon dioxide mix, the second cleaning fluid 32 also can first mix with gas 36 before ejection.In other words, this preferred embodiment is when operating, namely mist can be utilized to pressurize respectively the first cleaning fluid 30 and the second cleaning fluid 32, to regulate and control the flow velocity of cleaning fluid, therefore, the first cleaning fluid 30 can be not identical with the mixed proportion of gas 36 with the second cleaning fluid 32 with the mixed proportion of gas 36, and its flow velocity can not be identical, preferably, public liter/min of the flow velocity large compared with the flow velocity of the second cleaning fluid 32 0.1 of the first cleaning fluid 30.It should be noted that pressurization gas, be preferably the gas componant such as nitrogen not participating in cleaning reaction, or meeting and the gas componant of cleaning reaction can be used, while pressurizeing, more promote cleaning performance.In addition, when the first cleaning fluid 30 is identical chemical solution with the second cleaning fluid 32, its concentration can not be identical, and such as, the first cleaning fluid 30 can be the ammoniacal liquor of 15%, and the second cleaning fluid 32 can be the ammoniacal liquor of 17%.
In addition, Fig. 3 a, Fig. 3 b are the top views of the change type of the wafer direction of rotation that illustrates of the first preferred embodiment according to the present invention and cleaning fluid backwashing manner.As shown in Figure 3 a, 3 b, the first spray area A
1with the second spray area A
2can be adjusted to the Radius of common cover wafers.Remaining operating condition can be implemented according to the operating condition in Fig. 2 a, Fig. 2 b.
Aforesaid to be washed surperficial 20 can front, the active surface of such as wafer 18 or the back side of wafer 18 of wafer 18.And wafer 18 can be through cmp manufacture craft after, clean with above-mentioned wafer cleaner after etching process or after development of photoresist manufacture craft.According to different demands, can first jet 24 and second nozzle 28 be fixed on same support 38, that is, fixing first jet 24 and second nozzle 28 relative position each other, make when cleaning, except wafer 18 is except predetermined direction 34 rotation, support 38 also can scan (scan) mode and move horizontally back and forth, and the first jet of translation simultaneously 24 and second nozzle 26.
In sum, first embodiment characteristic is that each nozzle has a spraying parameter, wherein spraying parameter is that nozzle is in the horizontal direction relative to the function of the position of wafer, such as spraying parameter comprises distance between nozzle and surface to be washed, the flow velocity of cleaning fluid, the kind of cleaning fluid, cleaning fluid and the ratio of gas and vapor permeation and the concentration of cleaning fluid, in other words, the kind of the flow velocity of cleaning fluid, cleaning fluid, cleaning fluid and the ratio of gas and vapor permeation and the concentration of cleaning fluid etc. all can along with nozzle in the horizontal direction relative to wafer position and change.With regard to aforementioned first preferred embodiment, first jet 24 is different relative to the position of wafer 18 with second nozzle 26, and in the ratio of the kind of the flow velocity of its cleaning fluid, cleaning fluid, cleaning fluid and gas and vapor permeation and the concentration of cleaning fluid, at least one of them can be different.
What Fig. 4 illustrated is the wafer cleaner that the second preferred embodiment according to the present invention illustrates.As shown in Figure 4, wafer cleaning 100 device comprises a housing 112, and it comprises cabin 114 in, is provided with a platform 116 in the bottom in interior cabin 114, and in order to carry and to rotate a wafer 118, wherein wafer 118 has one to be washed surperficial 120.One carrier pipe 122, be located at the upside in interior cabin 114, one nozzle 124 is located at the end of carrier pipe 122 and is positioned at the top of wafer 118, and nozzle 124 comprises multiple opening, as opening 150,152,154,156,158, each opening and the height of surperficial 120 to be washed change relative to the position of wafer 118 along with each opening, such as, and the height D between opening 150 and to be washed surperficial 120
3, and the height D between opening 158 and to be washed surperficial 120
4different.According to preferred embodiment of the present invention, be relatively positioned at the opening of wafer 118 overcentre, as opening 150 from close to be washed surperficial 120, and can be positioned at the opening at wafer 118 edge, as opening 158 can from away to be washed surperficial 120.Thus, under identical flow velocity, can make the cleaning fluid sprayed by opening 150, the cleaning fluid gone out compared with opening 158 first arrives to be washed surperficial 120.In addition, each opening spacing to each other also may be the same or different, and the opening 152,156 that such as opening 154 is adjacent has one first spacing P respectively
1with one second spacing P
2, wherein the first spacing P
1with the second spacing P
2different.
Similarly, when cleaning wafer 118, wafer 118 can rotate in the past clockwise or counterclockwise, and the cleaning fluid that now each opening sprays can form a spray area respectively, and the cleaning fluid sprayed as opening 156 forms spray area A
3, the cleaning fluid that opening 158 sprays forms spray area A
4, the radius of the common cover wafers 118 of each spray area that all openings are formed.In addition, carrier pipe 122 can comprise multiple manifold, respectively corresponding each opening of connection, and the cleaning fluid therefore sprayed by each opening can for identical or different cleaning fluids, and cleaning fluid can be deionized water, ammoniacal liquor or its chemical cleaning solution etc.Can first be mixed with a gas 136, such as, with nitrogen or carbon dioxide mix before ejection by each opening at cleaning fluid.When operating, mist can be utilized to difference cleaning liquid under pressure, and to regulate and control the flow velocity of cleaning fluid, therefore, the cleaning fluid sprayed due to each opening can not be identical with the mixed proportion of gas, and its flow velocity also can not be identical.In addition, its concentration of cleaning fluid of each opening ejection can not be identical, and such as, the cleaning fluid sprayed by opening 150 can be the ammoniacal liquor of 15%, and the cleaning fluid sprayed by opening 158 can be the ammoniacal liquor of 17%.
Certainly, although only depict the nozzle 124 of a many opening of tool in Fig. 4, according to different operational requirements, also can multiple nozzle be set simultaneously, increases cleansing power.
The change type of the second embodiment of the present invention that what Fig. 5 illustrated is, wherein the element of identical function will use the label in Fig. 4, as shown in Figure 5, nozzle 124 can be a V-type, it also can be provided with multiple opening, be with the difference of the nozzle in Fig. 4, each spray area that the cleaning fluid sprayed by each opening of the nozzle in Fig. 5 is formed, a diameter of common cover wafers.
In the embodiment of Fig. 4 and Fig. 5, the surface to be washed of wafer 118 can front, the active surface of such as wafer 118 or the back side of wafer 118 of wafer 118.And wafer 118 can be through cmp manufacture craft after, clean with above-mentioned wafer cleaner after etching process or after development of photoresist manufacture craft.When cleaning, except wafer 118 is except predetermined direction rotation, nozzle 124 also can scan (scan) mode and move horizontally back and forth.
In sum, the characteristic of the second embodiment and its change type is that nozzle has a spraying parameter, wherein spraying parameter is that each opening on nozzle is in the horizontal direction relative to the function of the position of wafer, spraying parameter comprises the distance between opening and surface to be washed, the flow velocity of cleaning fluid, the kind of cleaning fluid, the ratio of cleaning fluid and gas and vapor permeation and the concentration of cleaning fluid, in other words, distance between opening and surface to be washed, the flow velocity of cleaning fluid, the kind of cleaning fluid, the ratio of cleaning fluid and gas and vapor permeation and the concentration of cleaning fluid can change relative to the position of wafer along with opening, with regard to aforementioned second preferred embodiment, opening 150 and opening 158 are different relative to the position of wafer 118 in the horizontal direction, and the distance between its opening and surface to be washed, the flow velocity of cleaning fluid, the kind of cleaning fluid, in the ratio of cleaning fluid and gas and vapor permeation and the concentration of cleaning fluid, at least one of them can be different.So, wafer surface can be made by center edge, according to different demand, adjustment cleaning condition, such as, at the center of wafer with flow velocity cleaning fluid faster, at the edge of wafer, with the cleaning fluid cleaning that flow velocity is slower.Therefore, after cleaning wafer can avoid wafer cleaning, there is the problem of residue on wafer.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the claims in the present invention claim change and modify, and all should belong to covering scope of the present invention.
Claims (9)
1. a wafer cleaning mode, comprises:
There is provided a wafer, it comprises surface to be washed and at least one nozzle is positioned at above this wafer;
Rotate this wafer, and rinse this surface to be washed by this nozzles spray one cleaning fluid, this nozzle has spraying parameter, and this spraying parameter is that this nozzle is in the horizontal direction relative to the function of the position of wafer.
2. wafer cleaning mode as claimed in claim 1, wherein this cleaning fluid is before sprinkling, at least with one gas and vapor permeation.
3. wafer cleaning mode as claimed in claim 2, wherein this spraying parameter is selected from following group: the kind of the distance between this nozzle and this surface to be washed, the flow velocity of this cleaning fluid, this cleaning fluid, this cleaning fluid and the ratio of this gas and vapor permeation and the concentration of this cleaning fluid.
4. wafer cleaning mode as claimed in claim 1, wherein this wafer cleaning mode is carried out after being surface after cmp manufacture craft, after etching process or development of photoresist manufacture craft.
5. a wafer cleaning mode, comprises:
There is provided a wafer to comprise surface to be washed and nozzle, this nozzle comprises multiple opening and is positioned at above this wafer; And
Rotate this wafer, and respectively spray a cleaning fluid by each this opening and rinse this surface to be washed, respectively this opening respectively has spraying parameter, this spraying parameter be respectively this opening in the horizontal direction relative to the function of the position of this wafer.
6. wafer cleaning mode as claimed in claim 5, wherein this cleaning fluid is before sprinkling, at least with one gas and vapor permeation.
7. wafer cleaning mode as claimed in claim 6, wherein this spraying parameter is selected from following group: the kind of the distance respectively between this opening and this surface to be washed, the flow velocity of this cleaning fluid, this cleaning fluid, this cleaning fluid and the ratio of this gas and vapor permeation and the concentration of this cleaning fluid.
8. wafer cleaning mode as claimed in claim 5, wherein this wafer cleaning mode is carried out after being surface after cmp manufacture craft, after etching process or development of photoresist manufacture craft.
9. wafer cleaning mode as claimed in claim 5, wherein this cleaning fluid is by when respectively this opening sprays, and each formation one spray area covers the diameter of this wafer jointly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510066846.XA CN104624545A (en) | 2009-12-24 | 2009-12-24 | Wafer washing device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510066846.XA CN104624545A (en) | 2009-12-24 | 2009-12-24 | Wafer washing device and method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910266338.0A Division CN102107197B (en) | 2009-12-24 | 2009-12-24 | Wafer cleaning device and wafer cleaning mode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104624545A true CN104624545A (en) | 2015-05-20 |
Family
ID=53204060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510066846.XA Pending CN104624545A (en) | 2009-12-24 | 2009-12-24 | Wafer washing device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104624545A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112466783A (en) * | 2020-11-16 | 2021-03-09 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN112859548A (en) * | 2019-11-27 | 2021-05-28 | 长鑫存储技术有限公司 | Developing device and developing method thereof |
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| CN112859548A (en) * | 2019-11-27 | 2021-05-28 | 长鑫存储技术有限公司 | Developing device and developing method thereof |
| CN112859548B (en) * | 2019-11-27 | 2024-03-26 | 长鑫存储技术有限公司 | Developing device and developing method thereof |
| CN112466783A (en) * | 2020-11-16 | 2021-03-09 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
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Application publication date: 20150520 |