CN104617180A - 一种石墨烯/氮化硼/氧化锌紫外探测器及其制备方法 - Google Patents
一种石墨烯/氮化硼/氧化锌紫外探测器及其制备方法 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 56
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 54
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 49
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 229960001296 zinc oxide Drugs 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000000825 ultraviolet detection Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000011109 contamination Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
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- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
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- H—ELECTRICITY
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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Abstract
本发明公开了一种石墨烯/氮化硼/氧化锌紫外探测器，该紫外探测器自下而上依次有背面电极、氧化锌层、氮化硼层、石墨烯层和正面电极。其制备方法步骤如下：先在洁净的氧化锌一面制作背面电极；再将氮化硼转移至洁净的氧化锌另一面上；然后将石墨烯转移到氮化硼上；最后在石墨烯上制作正面电极，获得石墨烯/氮化硼/氧化锌紫外探测器。本发明的石墨烯/氮化硼/氧化锌紫外探测器利用石墨烯材料的高透光性、高导电性六方氮化硼优异的绝缘性和透光度，并结合氧化锌优异的紫外探测性质，制作出工艺简单，成本低廉，响应度高的紫外探测器。
Description
技术领域
本发明涉及一种紫外探测器及其制造方法，尤其是石墨烯/氮化硼/氧化锌紫外探测器及其制造方法，属于光电探测技术领域。
背景技术
紫外探测技术是一种广泛应用的军民两用技术，它既可以用于火焰监测、太阳辐射测量、紫外光源控制和电弧探测等民用方面，也可以用于紫外报警，紫外通讯、紫外制导和紫外干扰等领域。目前广泛应用的紫外探测器是光电倍增管，虽然其探测灵敏度高，但体积大、功耗高并且设备昂贵。另一方面，随着集成光电子技术的发展，人们迫切需要开发体积小，低功耗，高集成度的紫外探测器。
石墨烯自2004年被发现以来，便以其高载流子迁移率，高可见光透射率、高电导率、高热导率及高杨氏模量等性质引起了人们的极大关注。这些独特的电学和光学性质使石墨烯在光电子领域有着极大的应用潜力。目前，已有研究者利用石墨烯制备出超快光电探测器，但由于石墨烯对可见光吸收只有2.3%，因此制得的探测器响应度不高。与此同时，氧化锌作为一种宽禁带直接带隙半导体，禁带宽度（3.3eV）与目前商用紫外探测器采用的GaN材料的禁带宽度（3.37eV）相近。但ZnO相比GaN其储量高，价格低廉。基于石墨烯与氧化锌肖特基结的紫外探测器已经被制备出来，但器件的漏电流较大。
发明内容
本发明的目的在于提供一种响应度高，制备工艺简单的石墨烯/氮化硼/氧化锌紫外探测器及其制备方法。
本发明的石墨烯/氮化硼/氧化锌紫外探测器，自下而上依次有背面电极、氧化锌层、氮化硼层、石墨烯层和正面电极。
上述的紫外探测器中，所述的氧化锌层可以为p型或者n型掺杂的氧化锌。
所述的氮化硼层中的氮化硼通常为1-20层。
所述的石墨烯层中的石墨烯通常为1-10层。
所述的背面电极可以是金、钯、银、钛、铬和镍中的一种或者几种的复合电极。
所述的正面电极可以是金、钯、银、钛、铬和镍中的一种或者几种的复合电极。
制备上述的石墨烯/氮化硼/氧化锌紫外探测器的方法，其特征在于包括如下步骤：
1）在洁净的n型或p型掺杂氧化锌的一面制作背面电极；
2）将原子层为1-20层的氮化硼转移至上述洁净的n型或p型掺杂氧化锌的另一面上；
3）将原子层数为1-10层的石墨烯转移至步骤2）所得的氮化硼层上；
4）在上述石墨烯层上制作正面电极。
本发明与背景技术相比具有的有益效果是：本发明采用石墨烯/氮化硼/氧化锌三层特殊结构，获得的紫外探测器体积小，具有较高的紫外响应度，此外，采用在石墨烯与氧化锌之间引入六方氮化硼绝缘层，可以有效的减小器件的漏电流，本发明的方法工艺简单，成本较低。
附图说明：
图1为石墨烯/氮化硼/氧化锌紫外探测器结构示意图；
图2为石墨烯/氮化硼/氧化锌紫外探测器的暗态IV曲线图；
图3为石墨烯/氮化硼/氧化锌紫外探测器在紫外光照下的IV曲线图。
具体实施方式
以下结合附图和实施例对本发明做进一步说明。
参照图1，本发明的石墨烯/氮化硼/氧化锌紫外探测器自下而上依次有背面电极1、氧化锌层2、氮化硼层3、石墨烯层4和正面电极5。
实施例1：
1）在洁净的p型掺杂的ZnO体单晶一面利用电子束蒸发法沉积金电极；
2）将得到的样品依次浸入去离子水、丙酮和异丙醇中进行表面清洗，以去除制备电极过程中ZnO表面的沾污；
3）将7层氮化硼转移至上述清洗干净的氧化锌单晶片的另一面上；
4）将单层石墨烯转移至上述氮化硼层上；
5）在石墨烯上利用热蒸发工艺沉积银电极，得到石墨烯/氮化硼/氧化锌紫外探测器。
本例制得的紫外探测器在暗态和紫外光照下的IV曲线图分别如图2、图3所示，可以看出，在无紫外光照情况下，反偏电流较小，而在紫外光照情况下，反偏电流获得3个数量级的增加，因此当器件在反偏工作条件下可以获得非常优异的紫外探测性能。
实施例2：
1）在洁净的n型掺杂的ZnO体单晶片的一面利用电子束蒸发法沉积钯电极；
2）将得到的样品依次浸入去离子水，丙酮和异丙醇中进行表面清洗，以去除制备电极过程中ZnO表面的沾污；
3）将14层氮化硼转移至上述经过清洗干净的氧化锌单晶片的另一面上；
4）将2层石墨烯转移至上述的氮化硼层上；
5）在石墨烯上利用热蒸发工艺沉积金电极，得到石墨烯/氮化硼/氧化锌紫外探测器。
实施例3：
1）在洁净的单面抛光的n型掺杂ZnO体单晶未抛光一面利用电子束蒸发法沉积镍电极；
2）将得到的样品依次浸入去离子水，丙酮和异丙醇中进行表面清洗，以去除制备电极过程中ZnO表面的沾污；
3）将20层氮化硼转移至上述经过清洗干净的氧化锌单晶片的抛光面上；
4）将1层石墨烯转移至上述氮化硼上；
5）在石墨烯上利用热蒸发工艺沉积银电极，得到石墨烯/氮化硼/氧化锌紫外探测器。
实施例4
1）在洁净的单面抛光的p型掺杂ZnO体单晶未抛光面上利用电子束蒸发法沉积铬金电极；
2）将得到的样品依次浸入去离子水，丙酮和异丙醇中进行表面清洗，以去除制备电极过程中ZnO表面的沾污；
3）将1层氮化硼转移至上述经过清洗干净的氧化锌单晶片抛光面上；
4）将2层石墨烯转移至上述氮化硼上；
5）在石墨烯上利用热蒸发工艺沉积金电极，得到石墨烯/氮化硼/氧化锌紫外探测器。
Claims (7)
1.一种石墨烯/氮化硼/氧化锌紫外探测器，其特征在于自下而上依次有背面电极（1）、氧化锌层（2）、氮化硼层（3）、石墨烯层（4）和正面电极（5）。
2.根据权利要求1所述的石墨烯/氮化硼/氧化锌紫外探测器，其特征在于所述的氧化锌层（2）为p型或者n型掺杂的氧化锌。
3.根据权利要求1所述的石墨烯/氮化硼/氧化锌紫外探测器，其特征在于所述的氮化硼层（3）中的氮化硼为1-20层。
4.根据权利要求1所述的石墨烯/氮化硼/氧化锌紫外探测器，其特征在于所述的石墨烯层（4）中的石墨烯为1-10层。
5.根据权利要求1所述的石墨烯/氮化硼/氧化锌紫外探测器，其特征在于所述的背面电极（1）是金、钯、银、钛、铬和镍中的一种或者几种的复合电极。
6.根据权利要求1所述的石墨烯/氮化硼/氧化锌紫外探测器，,其特征在于所述的正面电极（5）是金、钯、银、钛、铬和镍中的一种或者几种的复合电极。
7.制备权利要求1-6任一项所述的石墨烯/氮化硼/氧化锌紫外探测器的方法，其特征在于包括如下步骤：
1）在洁净的n型或p型掺杂氧化锌的一面制作背面电极；
2）将原子层为1-20层的氮化硼转移至上述洁净的n型或p型掺杂氧化锌的另一面上；
3）将原子层数为1-10层的石墨烯转移至步骤2）所得的氮化硼层上；
4）在上述石墨烯层上制作正面电极。
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Cited By (16)
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|---|---|---|---|---|
| CN105140332A (zh) * | 2015-08-13 | 2015-12-09 | 长安大学 | 一种石墨烯-ZnxAg（1-x）NyO（1-y）紫外探测器及其制备方法 |
| CN105590985A (zh) * | 2015-12-31 | 2016-05-18 | 南京大学 | 基于二维层转材料p-i-n异质结光电子器件 |
| CN106505115A (zh) * | 2016-10-17 | 2017-03-15 | 浙江大学 | 量子点光掺杂石墨烯/氮化硼/氮化镓紫外探测器及其制作方法 |
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