CN104617179A - Photoelectric sensor and preparation method thereof - Google Patents
Photoelectric sensor and preparation method thereof Download PDFInfo
- Publication number
- CN104617179A CN104617179A CN201510029407.1A CN201510029407A CN104617179A CN 104617179 A CN104617179 A CN 104617179A CN 201510029407 A CN201510029407 A CN 201510029407A CN 104617179 A CN104617179 A CN 104617179A
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- ceramic
- photoelectric sensor
- ceramic substrate
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 81
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 238000007521 mechanical polishing technique Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a photoelectric sensor and a preparation method thereof. The photoelectric sensor comprises a ceramic substrate, monocrystalline silicon, a photoelectric detector and a reading device, wherein a plurality of ceramic holes are opened in the ceramic substrate, the monocrystalline silicon is inserted in the ceramic holes, the photoelectric detector is arranged on the upper surface of the monocrystalline silicon, and the reading device is arranged on the lower surface of the monocrystalline silicon. According to the photoelectric sensor, the photoelectric detector is arranged on the upper surface of the monocrystalline silicon, the reading device is arranged on the lower surface of the monocrystalline silicon, and therefore, the sensor performances can be guaranteed; the monocrystalline silicon is inserted in the ceramic substrate, the ceramic substrate has strong mechanical properties, and therefore, proper amount of monocrystalline silicon can be inserted in the large-scale ceramic substrate to realize large-area photoelectric sensor preparation. The sensor overcomes the disadvantages of an existing single crystal semiconductor photoelectric detector technology.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, relate to a kind of photoelectric sensor and preparation method thereof.
Background technology
Current photoelectric sensor generally adopts wafer (monocrystalline silicon or sapphire), glass or plastics as substrate, for silicon photoelectric sensor, prior art provides two kinds of silicon photoelectric sensors, a kind of is the photoelectric sensor based on complementary metal oxide semiconductors (CMOS) (CMOS) be based upon on monocrystalline silicon piece, and another is the photoelectric sensor based on amorphous silicon film transistor (TFT) set up on a glass substrate.The former performance is higher, and noise is little, but shortcoming to be cost high, do not allow to be easy to do large, the full-size of silicon chip is diameter 12 cun or less.Although the latter can large area prepare, shortcoming is that performance is not high, and noise is larger.Both application are also different, and the former is mainly applied on digital camera and imageing sensor, utilize camera lens to focus light on relatively little imageing sensor.And the main application fields of the latter is on digital flat panel x-ray imaging or solar cell, the size of needs is generally more than 13 cun or larger.
Along with the development of semicon industry, more and more higher to the requirement of photoelectric sensor on market, especially on performance requirement and area requirements, but performance and manufacture area can not be taken into account by the photoelectric sensor that above technology provides, and are therefore difficult to the demand for development meeting industry.
Summary of the invention
The present invention is the defect solving above prior art, provides a kind of photoelectric sensor, and the photodetector of this photoelectric sensor and read-out device are arranged on the upper surface of monocrystalline silicon, lower surface, therefore can ensure that the performance of transducer is higher; Monocrystalline silicon is inlayed on a ceramic substrate simultaneously, and ceramic substrate has stronger mechanical property, therefore appropriate monocrystalline silicon can be embedded in large-area ceramic substrate, realizes the large area preparation of photoelectric sensor.Transducer provided by the invention, overcomes the defect of prior art.
For realizing above goal of the invention, the technical scheme of employing is as follows:
A kind of photoelectric sensor, comprise ceramic substrate, monocrystalline silicon, photodetector and read-out device, wherein ceramic substrate offers some ceramic holes, monocrystalline silicon is embedded in ceramic hole, and photodetector and read-out device are separately positioned on the upper surface of monocrystalline silicon, lower surface.
In such scheme, because photodetector and read-out device are separately positioned on the upper surface of monocrystalline silicon, lower surface, therefore its performance is comparatively superior, ceramic substrate has stronger mechanical strength simultaneously, therefore appropriate monocrystalline silicon can be embedded in large-area ceramic substrate, realize the large area preparation of photoelectric sensor.Transducer provided by the invention, overcomes the defect of prior art.
Preferably, in order to make the performance of photoelectric sensor more superior, monocrystalline silicon is the spherical silicon of hole doping or electron adulterated mistake.
Preferably, 100 ~ 200 microns are spaced apart between ceramic hole and ceramic hole.
Preferably, described photodetector is photodiode, photoconductor or dipole triode, and read-out device is field-effect transistor or thin-film transistor.
Meanwhile, present invention also offers a kind of method preparing above photoelectric sensor, its technical scheme is as follows:
Comprise the following steps:
S1. offer some ceramic holes on a ceramic substrate, monocrystalline silicon is placed in ceramic hole, monocrystalline silicon is sintered, make monocrystalline silicon be embedded in ceramic hole;
S2. on the upper surface, lower surface of monocrystalline silicon, photodetector and read-out device is prepared respectively.
Preferably, before carrying out step S2, need to do planarizing process to the surface of monocrystalline silicon.
Preferably, planarizing process is done by the surface of silicon chip chemical mechanical polishing technique to monocrystalline silicon.
Preferably, in step S1, by high-frequency vibration method or vacuum equipment method, monocrystalline silicon is placed in ceramic hole;
Wherein the specific operation process of high-frequency vibration method is as follows: shed in the ceramic substrate of horizontal positioned by the monocrystalline silicon of suitable quantity, makes ceramic substrate carry out dither by a narrow margin, thus makes monocrystalline silicon be filled to ceramic hole;
The specific operation process of vacuum equipment method is as follows: adsorbed monocrystalline silicon by vacuum equipment, is then placed in ceramic hole by the monocrystalline silicon of absorption.
Compared with prior art, the beneficial effect of technical solution of the present invention is:
The photodetector of photoelectric sensor provided by the invention and read-out device are arranged on the upper surface of monocrystalline silicon, lower surface, therefore can ensure the performance of transducer; And monocrystalline silicon is inlayed on a ceramic substrate, ceramic substrate has stronger mechanical property, therefore appropriate monocrystalline silicon can be embedded in large-area ceramic substrate, realizes the large area preparation of photoelectric sensor.Transducer provided by the invention, overcomes the defect of existing single crystal semiconductor photodetector technology.
Accompanying drawing explanation
Fig. 1 is the side schematic view of photoelectric sensor.
Fig. 2 is that photoelectric sensor is for structural representation during x-ray imaging.
Fig. 3 is the equivalent circuit diagram of photoelectric sensor.
Fig. 4 is the side schematic view of photoelectric sensor after planarizing process.
Embodiment
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent.
Embodiment 1
Photoelectric sensor provided by the invention comprises ceramic substrate, monocrystalline silicon, photodetector and read-out device, wherein ceramic substrate offers some ceramic holes, monocrystalline silicon is embedded in ceramic hole, and photodetector and read-out device are separately positioned on the upper surface of monocrystalline silicon, lower surface.Wherein, monocrystalline silicon is spherical, and concrete structure as shown in Figure 1.
In such scheme, as shown in table 1, for the TFT of x-ray imaging compared with photoelectric sensor provided by the invention, although large-area preparation can be realized, but the photodetector of photoelectric sensor provided by the invention and read-out device are separately positioned on monocrystalline silicon upper surface, lower surface, its performance is comparatively superior, and compared with CMOS, photoelectric sensor provided by the invention can realize large-area preparation.Therefore photoelectric sensor provided by the invention very has market prospects.
Table 1
Wherein substrate ceramic can select the complex sintered pottery of low temperature (LTCC), the main component beginning aluminium oxide of LTCC and silicon dioxide.The production technology of the complex sintered pottery of low temperature is simple and cheap.
In concrete implementation process, interval between ceramic hole and ceramic hole is generally 100 ~ 200 microns or less, concrete interval can adjust as requested, wherein photodetector can be photodiode, photoconductor or dipole triode, and read-out device can be field-effect transistor or thin-film transistor.
Fig. 2 is that photoelectric sensor provided by the invention is for concrete structure during x-ray imaging, X ray is converted to visible ray by the X ray conversion screen (X-ray Scintillator) being wherein positioned at top, visible ray is incident on the ITO/N+/P-type photodiode of monocrystalline silicon upper surface, thus making ITO photodiode produce photocurrent carrier, ITO photodiode is as transparency electrode here.Monocrystalline silicon can adopt slight hole doping (P-), or adopts electron adulterated (N-), mainly in order to absorb light in depletion region better.After photocurrent carrier produces, under the double action of built-in field and bias voltage, hole will in the inner enrichment of monocrystalline silicon, and electronics will move to ITO photodiode, due to the relation of ITO photodiode capacitance, having a certain amount of positive charge is stored in P-, and these positive charges define again the electric field action of the transistor to bottom, is equivalent to an applying bias.The output characteristic of bottom transistor will offset, and light signal is just responded in this way and gathered.
In said process, its equivalent circuit diagram as shown in Figure 3, can think the four-terminal device that photoelectric sensor is made up of with a transistor a photodiode, when unglazed photograph, photodiode bias (Bias) mainly adds on the photodiode, very little to the effect of transistor.When there being illumination, due to generation and the enrichment of a large amount of photocurrent carrier, and the diminishing of photodiode resistance, bias voltage is mainly added on transistor, and bias value is.Like this, the threshold voltage of transistor will reduce, and output current will increase.Threshold voltage can be described by following formula:
Being wherein without critical voltage during potential difference between transistor base and source electrode, is monocrystalline silicon effect parameter, be then the parameter (difference of forbidden band center line and Fermi level) relevant to semiconductor energy rank.
Present invention also offers a kind of method preparing above photoelectric sensor, its technical scheme is as follows simultaneously:
Comprise the following steps:
S1. offer some ceramic holes on a ceramic substrate, monocrystalline silicon is placed in ceramic hole, monocrystalline silicon is sintered, make monocrystalline silicon be embedded in ceramic hole;
S2. on the upper surface, lower surface of monocrystalline silicon, photodetector and read-out device is prepared respectively.
Wherein, ceramic substrate is sintered by ceramic batch and obtains, simultaneously because the mechanical strength of ceramic batch is less, the difficulty offering ceramic hole is lower, therefore ceramic hole can be offered on ceramic batch, then ceramic batch is sintered, obtain ceramic substrate, now do not need to offer ceramic hole on a ceramic substrate again.
In above scheme, why first ceramic batch is sintered, sintering monocrystalline silicon, be because ceramic batch can produce contraction in the process of sintering densification, and monocrystalline silicon can expand in the process of sintering again, therefore in order to both can be made better to combine, need first to sinter ceramic batch, then monocrystalline silicon is sintered, when sintering monocrystalline silicon, the density of ceramic substrate can not change, and therefore can not impact monocrystalline silicon.
As shown in Figure 1, monocrystalline silicon is spherical to the side view of the photoelectric sensor prepared, and some monocrystalline silicon is inlayed on a ceramic substrate.Meanwhile, before carrying out step S2, need to do planarizing process by the surface of silicon chip chemical mechanical polishing technique to monocrystalline silicon.Through the photoelectric sensor of planarizing process side view as shown in Figure 4.Because the cohesive force between monocrystalline silicon and ceramic substrate is very strong, therefore when carrying out leveling, monocrystalline silicon all can not come off from ceramic substrate.
As the preferred scheme of one, in step S1, by high-frequency vibration method or vacuum equipment method, monocrystalline silicon is placed in ceramic hole;
Wherein the specific operation process of high-frequency vibration method is as follows: shed in the ceramic substrate of horizontal positioned by the monocrystalline silicon of suitable quantity, makes ceramic substrate carry out dither by a narrow margin, thus makes monocrystalline silicon be filled to ceramic hole;
The specific operation process of vacuum equipment method is as follows: adsorbed monocrystalline silicon by vacuum equipment, is then placed in ceramic hole by the monocrystalline silicon of absorption.
The photodetector of photoelectric sensor provided by the invention and read-out device are arranged on the upper surface of monocrystalline silicon, lower surface, therefore can ensure the performance of transducer; And monocrystalline silicon is inlayed on a ceramic substrate, ceramic substrate has stronger mechanical property, therefore appropriate monocrystalline silicon can be embedded in large-area ceramic substrate, realizes the large area preparation of photoelectric sensor.Transducer provided by the invention, overcomes the defect of existing single crystal semiconductor photodetector technology.
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.All any amendments done within the spirit and principles in the present invention, equivalent to replace and improvement etc., within the protection range that all should be included in the claims in the present invention.
Claims (8)
1. a photoelectric sensor, it is characterized in that: comprise ceramic substrate, monocrystalline silicon, photodetector and read-out device, wherein ceramic substrate offers some ceramic holes, monocrystalline silicon is embedded in ceramic hole, and photodetector and read-out device are separately positioned on the upper surface of monocrystalline silicon, lower surface.
2. photoelectric sensor according to claim 1, is characterized in that: described monocrystalline silicon is the spherical silicon of hole doping or electron adulterated mistake.
3. photoelectric sensor according to claim 1, is characterized in that: be spaced apart 100 ~ 200 microns between ceramic hole and ceramic hole.
4. the photoelectric sensor according to any one of claim 1 ~ 3, is characterized in that: described photodetector is photodiode, photoconductor or dipole triode, and read-out device is field-effect transistor or thin-film transistor.
5. the preparation method of photoelectric sensor according to any one of claim 1 ~ 4, is characterized in that: comprise the following steps:
S1. offer some ceramic holes on a ceramic substrate, monocrystalline silicon is placed in ceramic hole, monocrystalline silicon is sintered, make monocrystalline silicon be embedded in ceramic hole;
S2. on the upper surface, lower surface of monocrystalline silicon, photodetector and read-out device is prepared respectively.
6. the preparation method of large area photodetector according to claim 5, is characterized in that: before carrying out step S2, needs to do planarizing process to the surface of monocrystalline silicon.
7. the preparation method of large area photodetector according to claim 6, is characterized in that: do planarizing process by the surface of silicon chip chemical mechanical polishing technique to monocrystalline silicon.
8. the preparation method of large area photodetector according to claim 5, is characterized in that: in step S1, is placed in ceramic hole by high-frequency vibration method or vacuum equipment method by monocrystalline silicon;
Wherein the specific operation process of high-frequency vibration method is as follows: shed in the ceramic substrate of horizontal positioned by the monocrystalline silicon of suitable quantity, makes ceramic substrate carry out dither by a narrow margin, thus makes monocrystalline silicon be filled to ceramic hole;
The specific operation process of vacuum equipment method is as follows: adsorbed monocrystalline silicon by vacuum equipment, is then placed in ceramic hole by the monocrystalline silicon of absorption.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510029407.1A CN104617179B (en) | 2015-01-21 | 2015-01-21 | A kind of photoelectric sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510029407.1A CN104617179B (en) | 2015-01-21 | 2015-01-21 | A kind of photoelectric sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104617179A true CN104617179A (en) | 2015-05-13 |
| CN104617179B CN104617179B (en) | 2016-11-09 |
Family
ID=53151535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510029407.1A Active CN104617179B (en) | 2015-01-21 | 2015-01-21 | A kind of photoelectric sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104617179B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4614835A (en) * | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
| US5415700A (en) * | 1993-12-10 | 1995-05-16 | State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Concrete solar cell |
| US20020148967A1 (en) * | 2001-04-16 | 2002-10-17 | Iwanczyk Jan S. | Junction-side illuminated silicon detector arrays |
| JP2006332124A (en) * | 2005-05-23 | 2006-12-07 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element and manufacturing method thereof |
| CN201722851U (en) * | 2010-07-21 | 2011-01-26 | 浙江合大太阳能科技有限公司 | Novel photovoltaic tile capable of effective heat dissipation |
| CN102881698A (en) * | 2011-07-12 | 2013-01-16 | 索尼公司 | Solid-state imaging device, solid-state imaging device manufacturing method, and electronic device |
-
2015
- 2015-01-21 CN CN201510029407.1A patent/CN104617179B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4614835A (en) * | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
| US5415700A (en) * | 1993-12-10 | 1995-05-16 | State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Concrete solar cell |
| US20020148967A1 (en) * | 2001-04-16 | 2002-10-17 | Iwanczyk Jan S. | Junction-side illuminated silicon detector arrays |
| JP2006332124A (en) * | 2005-05-23 | 2006-12-07 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element and manufacturing method thereof |
| CN201722851U (en) * | 2010-07-21 | 2011-01-26 | 浙江合大太阳能科技有限公司 | Novel photovoltaic tile capable of effective heat dissipation |
| CN102881698A (en) * | 2011-07-12 | 2013-01-16 | 索尼公司 | Solid-state imaging device, solid-state imaging device manufacturing method, and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104617179B (en) | 2016-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103296035B (en) | X-ray flat panel detector and manufacturing method thereof | |
| US20140159129A1 (en) | Near-infrared-visible light adjustable image sensor | |
| CN104517983B (en) | Solid-state imaging device, method of manufacturing the same, and imaging system | |
| Yao et al. | Molecular engineering of perovskite photodetectors: recent advances in materials and devices | |
| CN103139499B (en) | There is imageing sensor active pixel and the imageing sensor of variable conversion gain | |
| US20180145099A1 (en) | Graded-semiconductor image sensor | |
| CN103811510A (en) | Pixel unit of image sensor and forming method thereof | |
| US11264418B2 (en) | Gate-controlled charge modulated device for CMOS image sensors | |
| US10109667B2 (en) | Imaging device, module, and electronic device | |
| CN103715214A (en) | Manufacture method of high-definition digital X-ray flat panel detector | |
| CN104425523B (en) | Imaging sensor and its manufacturing method | |
| CN103022069B (en) | Imageing sensor | |
| CN105280750A (en) | Photosensing device and photosensing module | |
| CN109904183A (en) | Imaging sensor and forming method thereof | |
| CN100424879C (en) | Deep-submicron CMOS process inductively compensated photoelectric detector and its manufacturing method | |
| CN109950265A (en) | Imaging sensor and its manufacturing method, control method | |
| CN103139497B (en) | The active pixel and cmos image sensor of cmos image sensor | |
| CN104617179B (en) | A kind of photoelectric sensor and preparation method thereof | |
| CN102332463A (en) | Image sensor with insulating buried layer and fabrication method thereof | |
| CN203983286U (en) | There is the SOI photodetector of resonant cavity enhancement effect bar grid type | |
| CN106686328B (en) | Silicon technology quantum dot pixel unit circuit, sensor and signal acquisition method | |
| CN102522416B (en) | Image sensor and production method thereof | |
| CN105304665A (en) | CMOS image sensor for improving full-well capacity of pixel unit | |
| El-Amir et al. | Optoelectronic characteristics of the Ag-doped Si pn photodiodes prepared by a facile thermal diffusion process | |
| CN100541832C (en) | Optical voltage multi-quanta trap infrared detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |