CN104609851A - Temperature-stable ultra-low dielectric constant microwave dielectric ceramic Li2Zn4O5 and preparation method thereof - Google Patents

Temperature-stable ultra-low dielectric constant microwave dielectric ceramic Li2Zn4O5 and preparation method thereof Download PDF

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CN104609851A
CN104609851A CN201510052728.3A CN201510052728A CN104609851A CN 104609851 A CN104609851 A CN 104609851A CN 201510052728 A CN201510052728 A CN 201510052728A CN 104609851 A CN104609851 A CN 104609851A
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dielectric ceramic
ceramic
microwave dielectric
preparation
powder
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方亮
李纯纯
苏和平
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Guilin University of Technology
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Guilin University of Technology
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Abstract

The invention discloses temperature-stable ultra-low dielectric constant microwave dielectric ceramic Li2Zn4O5 and a preparation method of the microwave dielectric ceramic. The preparation method comprises the following steps: (1) weighing and preparing the original powder of Li2CO3 and ZnO which are more than 99.9% (weight percentage) in purity according to the composition of Li2Zn4O5; (2) mixing the raw materials of the step (1) for 12h through wet-type ball milling, wherein absolute ethyl alcohol is taken as a ball-milling medium; after drying, pre-burning in atmosphere for 6h at 750 DEG C; and (3) adding a binding agent to powder prepared by the step (2) and granulating, pressing and forming, and finally sintering in atmosphere for 4h at 800-850 DEG C, wherein the binding agent is a polyvinyl alcohol solution which is 5% in mass concentration and the addition of the polyvinyl alcohol is 3% of the total mass of the powder. The ceramic prepared by the invention is good in sintering, dielectric constant reaches 12.7-13.3 and quality factor Qf value reaches up to 105000-133000GHz; and the ceramic is low in temperature coefficient of resonance frequency, and has a high application value in industry.

Description

Temperature-stable ultralow dielectric microwave dielectric ceramic Li 2zn 4o 5and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to dielectric ceramic material of the microwave devices such as ceramic substrate, resonator and the wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency ?little of as far as possible to ensure the thermostability that device has had, general requirement-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO 2microwave dielectric filter, but its temperature coefficient of resonance frequency τ ?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=20 ~ 35, Q=(1 ~ 2) × 10 4(under the GHz of f>=10), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 45, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, directly can not burn formation laminated ceramic capacitor altogether with the low melting point metal electrode such as low-cost Ag and Cu.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and research, but due to three performance index (ε of microwave dielectric ceramic rwith Qf and τ f) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requriementss and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot production application.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, explore with exploitation can low-temperature sintering have again near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the microwave dielectric ceramic of higher figure of merit.
Summary of the invention
The object of this invention is to provide one and there is good thermal stability and low-loss low temperature sintering ultralow dielectric microwave dielectric ceramic material and preparation method thereof again.
The chemical constitution of microwave dielectric ceramic material of the present invention is Li 2zn 4o 5.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3li is pressed with the starting powder of ZnO 2zn 4o 5composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is dehydrated alcohol, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 800 ~ 850 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
Advantage of the present invention: Li 2zn 4o 5pottery sintering below 850 DEG C is good, and specific inductivity reaches 12.7 ~ 13.3, especially the temperature factor τ of resonant frequency ?nearly zero, temperature stability is good; Quality factor q f value, up to 105000-133000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, industrially have great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:

Claims (1)

1. a low temperature sintering temperature-stable ultralow dielectric microwave dielectric ceramic, is characterized in that the chemical constitution of described microwave dielectric ceramic is: Li 2zn 4o 5;
Preparation method's step of described microwave dielectric ceramic is:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3li is pressed with the starting powder of ZnO 2zn 4o 5composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry; ;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 800 ~ 850 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
CN201510052728.3A 2015-02-02 2015-02-02 Temperature-stable ultra-low dielectric constant microwave dielectric ceramic Li2Zn4O5 and preparation method thereof Pending CN104609851A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105174937A (en) * 2015-10-09 2015-12-23 桂林理工大学 Microwave dielectric ceramic Li4Zn5Sb2O12 with low dielectric constant and preparation method of microwave dielectric ceramic
CN105254292A (en) * 2015-11-17 2016-01-20 桂林理工大学 Temperature-stable middle-dielectric constant microwave dielectric ceramic Li2Sm2ZnTiO7

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969427A (en) * 1982-10-08 1984-04-19 Nippon Cement Co Ltd Dilithium zinc dioxide
CN1975939A (en) * 2006-12-04 2007-06-06 天津大学 High-dielectric constant microwave dielectric ceramic and producing method thereof
CN104003720A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic Li2Zn2W2O9 capable of being sintered at low temperature and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969427A (en) * 1982-10-08 1984-04-19 Nippon Cement Co Ltd Dilithium zinc dioxide
CN1975939A (en) * 2006-12-04 2007-06-06 天津大学 High-dielectric constant microwave dielectric ceramic and producing method thereof
CN104003720A (en) * 2014-05-17 2014-08-27 桂林理工大学 Microwave dielectric ceramic Li2Zn2W2O9 capable of being sintered at low temperature and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105174937A (en) * 2015-10-09 2015-12-23 桂林理工大学 Microwave dielectric ceramic Li4Zn5Sb2O12 with low dielectric constant and preparation method of microwave dielectric ceramic
CN105254292A (en) * 2015-11-17 2016-01-20 桂林理工大学 Temperature-stable middle-dielectric constant microwave dielectric ceramic Li2Sm2ZnTiO7

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