CN104602380A - Light-emitting component and display device - Google Patents

Light-emitting component and display device Download PDF

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CN104602380A
CN104602380A CN201510017142.3A CN201510017142A CN104602380A CN 104602380 A CN104602380 A CN 104602380A CN 201510017142 A CN201510017142 A CN 201510017142A CN 104602380 A CN104602380 A CN 104602380A
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wavelength
light
spectrum
maximum
resonator
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CN104602380B (en
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吉冈俊博
内田敏治
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Pioneer Corp
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Pioneer Corp
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Abstract

The invention relates to a light-emitting component with a resonator structure and a display device with resonator structures. Even if the design value of the film thickness contrast ratio generates deviation, luminance fluctuation can be restrained by the component. The display device comprises the resonator structure which includes a first reflection component, a second reflection component, and a luminescent layer arranged between the first reflection component and the second reflection component, so that one part of lights resonated between the first reflection component and the second reflection component can penetrate the first reflection component or the second reflection component; the maximum wavelength of the resonator output spectrum of the resonator structure is between the maximum wavelength of the inner luminescence spectrum of the luminescent layer and the maximum wavelength of the light visual effect function.

Description

Light-emitting component and display unit
(the application be based on enter the National Phase in China date be on December 12nd, 2011, application number is the divisional application of the application for a patent for invention of 200980159845.2 (international application no: PCT/JP2009/002645))
Technical field
The present invention relates to light-emitting component and display unit.
Background technology
EL element is known as the light-emitting component in the display unit such as display equipment and lighting device, wherein have employed when applying voltage because electroluminescence (EL) phenomenon produces self luminous material.EL element is film-form light-emitting component, between upper electrode and lower electrode, wherein form the luminescent layer of organic material or inorganic material, applies voltage make it luminous by upper and lower electrode pair luminescent layer.
Have developed the light-emitting component of resonator structure (so-called microresonator structure) in recent years, it is completely reflecting mirror by making the side in upper electrode and lower electrode, the opposing party is made to be pellicle mirror through a part of wavelength, thus the light making luminescent layer send produces resonance (for example, referring to patent documentation 1,2).
Patent Document 1 discloses a kind of light-emitting component, the peak wavelength of its multi interference spectrum that peak wavelength of internal illumination spectrum and resonance part are produced staggers mutually, reduces the dependence of white to angle of visibility.The peak wavelength of the multi interference spectrum of redness (R) is offset to long wavelength side (+10nm), the peak wavelength of the multi interference spectrum of green (G) is offset to long wavelength side (+4nm), make the peak wavelength of the multi interference spectrum of blueness (B) to short wavelength side (-10nm) skew, reduce the dependence of white to field-of-view angle thus.
Also disclose a kind of light-emitting component in patent documentation 2, the peak wavelength of its multi interference spectrum that peak wavelength of internal illumination spectrum and resonance part are produced staggers mutually, reduces the dependence of white to angle of visibility.But different from patent documentation 1, it makes redness (R) consistent with the peak wavelength of internal illumination spectrum with the peak wavelength of the multi interference spectrum of blue (B).
Disclosed in patent documentation 1 and 2, for such as giant display etc., technology perhaps requires that the display unit of large angle of visibility characteristic is effective, but when portable terminal, personal computer, navigation system etc. are specific to the miniscope of individual's use, the brightness disproportionation of frontal can exceed permissible range sometimes.
That is, when adopting resonator structure, because of its filtering feature and the luminous highly directive exported, frontal brightness increases.Do not need the display unit of large angle of visibility characteristic, the display unit that such as individual uses make use of this directive property, compared with the situation such as TV needing large angle of visibility, requires that the brightness disproportionation of frontal is less.But, the thin-film luminous element of resonator structure, its filtering feature is responsive to distance between mirrors (resonator optical path length), if because mismachining tolerance makes resonator optical path length uneven in the course of processing, then the chromaticity coordinates (colorimetric purity) of frontal and brightness change can exceed permissible range sometimes.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Publication 2002-367770 publication
Patent documentation 2: Japanese Patent Publication 2007-316611 publication
Summary of the invention
It is more than an example of problem to be solved by this invention.An object of the present invention is the light-emitting component and the display unit that provide a kind of resonant structure, even if the relative design load of thickness departs from, resonator optical path length changes, and also can suppress luminance fluctuation.
The feature of light-emitting component of the present invention has resonator structure, the luminescent layer that this resonator structure comprises the first reflection part, the second reflection part and is configured between described first reflection part and the second reflection part; The part that the light resonated occurs between described first reflection part and described second reflection part through described first reflection part or described second reflection part through, the resonator output spectrum of described resonator structure reaches the wavelength of maximum, reaches the wavelength of maximum and light to reach depending on imitating function between the wavelength of maximum at the internal illumination spectrum of described luminescent layer.
The feature of display unit of the present invention is, has multiple resonator structure, the luminescent layer that this resonator structure comprises the first reflection part, the second reflection part and is configured between described first reflection part and the second reflection part; The part of the light resonated between described first reflection part and described second reflection part through described first reflection part or described second reflection part through, the resonator output spectrum penetrated from described resonator structure reaches the wavelength of maximum, reaches the wavelength of maximum and light to reach depending on imitating function between the wavelength of maximum at the internal illumination spectrum of described luminescent layer.
Accompanying drawing explanation
Fig. 1 is the longitudinal section of the light-emitting component of first embodiment of the invention.
Fig. 2 is the vertical view of the light-emitting component of first embodiment of the invention.
Fig. 3 is the figure that to represent with blue (B) be spectrum during object.
Fig. 4 is the rate of change R that to represent with blue (B) be luminous intensity during object ewith the figure of the relation of rate of change of brightness.
Fig. 5 represents the figure with blue (B) relation that is Thickness Variation during object and front face brightness value.
Fig. 6 is the figure that to represent with blue (B) be spectrum during object.
Fig. 7 is the figure that to represent with red (R) be spectrum during object.
Fig. 8 is the figure that to represent with red (R) be spectrum during object.
Fig. 9 represents the figure with red (R) relation that is Thickness Variation during object and front face brightness value.
Figure 10 is the longitudinal section of the light-emitting component of four embodiment of the invention.
Figure 11 is the longitudinal section of the light-emitting component of fifth embodiment of the invention.
Symbol description
1 substrate
2 anodes
3 organic layers
31 hole injection layers
32 hole transporting layers
33 luminescent layers
34 electron supplying layers
4 negative electrodes
5 wall parts
Embodiment
Describe the preferred implementation of light-emitting component of the present invention and display unit with reference to the accompanying drawings in detail.In the following description, for have send respectively redness (R), green (G), blue (B) light the display unit of light-emitting component be described.But the execution mode below illustrated does not form the restriction to technical scope of the present invention.
(the first execution mode)
In example shown in Fig. 1 and Fig. 2, send 3 light-emitting components (R, G, B) of redness (R), green (G), blue (B) light in the configuration of public substrate 1, form RGB unit.Fig. 1 is the longitudinal section of light-emitting component (R, G, B), and Fig. 2 is vertical view.In actual display unit, arrange multiple light-emitting component (R, G, B) on substrate 1 and form viewing area, utilize the not shown drive circuit be configured at outside viewing area to carry out passive matrix, or active drive is carried out to each arrangements of components drive circuit.
Light-emitting component (R, G, B) in present embodiment, as shown in Figure 1, the stacked anode 2 as the first reflection part, organic layer 3 and the negative electrode 4 as the second reflection part on substrate, light penetrates from the surperficial side being formed with film, i.e. so-called top light emitting (top emission) structure.These RGB light-emitting components are separated by the wall part 5 being called as dike (bank).Also can on negative electrode 4 organic layer or the inorganic layer such as stacked diaphragm seal.Although not display in figure, also can be stacked for preventing film or the substrate of external light reflection further.
Anode 2 is double-layer structure, comprises reflecting electrode 21 and transparency electrode 22.The material that the materials'use work function that anode 2 connects with hole injection layer 31 is high.Particularly, the material of reflecting electrode 21 can use the metals such as such as Al, Cr, Mo, Ni, Pt, Au, Ag, or containing the alloy of these metals or intermetallic compound etc.The thickness of reflecting electrode 21 is such as 100nm.Reflecting electrode 21 for the mean value of 400 ~ 700nm wavelength light reflectance more than 80%, preferred high reflectance.In addition, the material of transparency electrode 22 such as can use the metal oxides etc. such as ITO (Indium TinOxide) or IZO (Indium Zinc Oxide).The thickness of transparency electrode 22 is such as 75nm.Although eliminate diagram in fig. 1 and 2, anode 2 is connected with extraction electrode (distribution electrode).Anode 2 also can for having the single-layer electrodes of reflecting electrode 21.
In organic layer 3, the layer of a part can be made up of inorganic material.Also can split further and have more multi-layered, or single layer also can be made to have the function of multiple layers and stacked number is reduced.Organic layer 3 shown in Fig. 1 is sandwich construction, its from anode 2 side sequentially laminated with hole injection layer 31, hole transporting layer 32, luminescent layer 33 and electron supplying layer 34.Organic layer 3 at least has luminescent layer 33, but in order to effectively promote that electro optical phenomenon produces, preferably configures hole injection layer 31, hole transporting layer 32 and electron supplying layer 34 etc.
When forming resonator structure, each light-emitting component of RGB has best resonator optical path length respectively.In the structure of fig. 1, reflecting electrode 21 is resonator optical path length with the spacing distance of the reflecting surface of negative electrode 4.As an example, for red (R), for obtaining optimum resonance device optical path length, stacked thickness is made to be 300nm; For green (G), for obtaining optimum resonance device optical path length, stacked thickness is made to be 235nm; For blue (B), for obtaining optimum resonance device optical path length, stacked thickness is made to be 200nm.Thickness such as by adjusting organic layer 3 adjusts above-mentioned resonator optical path length.But, as mentioned above, be difficult to prevent thickness off-design value completely in the course of processing.Especially be difficult to when utilizing rubbing method to form organic layer 3 control thickness.When such as by ink-jet method film forming, the deviation of interelement thickness can reach more than 5%.
In structure shown in Fig. 1, as an example, by changing the thickness adjustment resonator optical path length of hole injection layer 31.Specifically, the thickness (design load) of the hole injection layer 31 of red (R) is 125nm; The thickness (design load) of the hole injection layer 31 of green (G) is 65nm; The thickness (design load) of the hole injection layer 31 of blue (B) is 20nm.In the resonator structure of RGB, the thickness of transfer layer 32, luminescent layer 33, electron supplying layer 34 is identical.Such as, the thickness (design load) of hole transporting layer 32 is 30nm; The thickness (design load) of luminescent layer 33 is 30nm; The thickness (design load) of electron supplying layer 34 is 40nm.
Hole injection layer 31 and hole transporting layer 32 can be formed by the material that hole transporting properties is high, such as can use the phthalocyanine compounds such as CuPc (CuPc), m-MTDATA etc. star-like (starburst) amine, the polymer of benzidine-type amine, 4, 4 '-bis-[N-(1-naphthyl)-N-anilino-]-biphenyl (4, 4 '-bis [N-(1-naphthyl)-N-phenylamino]-biphenyl:NPB), the aryl tertiary amines such as 4-aminodiphenylamine (N-phenyl-p-phenylenediamine:PPD), Stilbene (stilbene) compounds such as 4-(di-p-tolyl amino)-4 '-[4-(di-p-tolyl is amino) styryl] Stilbene (4-(di-P-tolylamino)-4 '-[4-(di-P-tolylamino) styryl] stylbenzene), triazole derivative, styrylamine compound, buckyballs, the organic material of the fullerenes such as C60 etc.The macromolecule dispersion based material having disperseed low molecule material in the macromolecular materials such as Merlon can also be used in.But be not limited to above-mentioned material.
Luminescent layer 33 can use the material producing red (R), green (G), blue (B) electro optical phenomenon.The material of luminescent layer 33 such as can use (oxine) aluminium complex (Alq3) ((8-hydroxyquinolinate) aluminum) complex (Alq3)) etc. fluorescent type organo-metallic compound; The aromatic series dimethylene compounds such as 4,4'-bis-(2,2-diphenylethyllene)-biphenyl (4,4 '-bis (2,2 '-diphenylvinyl)-biphenyl:DPVBi); (the styryl benzene compound such as Isosorbide-5-Nitrae-two (2-methyl styrene base) benzene (Isosorbide-5-Nitrae-bis (2-methylstyryl) benzene); 3-(4-biphenyl)-4-phenyl-5-tert-butyl-phenyl-1,2, triazole (triazole) derivatives such as 4-triazole (3-(4-biphenyl)-4-phenyl-5-t-butylphenyl-1,2,4 – triazole:TAZ); The fluorescent type organic materials such as anthraquinone (anthraquinone) derivative, fluorenes (fluonorene) derivative; The macromolecular material such as poly-be, polyfluorene (polyfluorene) is, polyvinylcarbazole (polyvinylcarbazole:PVK) is to benzene ethylene (polyparaphenylene vinylene:PPV); The phosphorescence such as platinum complex or iridium complex type organic material.But be not limited to above-mentioned material.Also can not use organic material, and use the inorganic material that can produce electro optical phenomenon.
Electron supplying layer 34 can be formed by the material that electron transport performance is high, such as, the Siloles such as PyPySPyPy (silacyclopentadiene (silole)) derivative, nitre can be used for organic materials such as Fluorenone (nitro-substituted fluorenone) derivative, anthraquinone bismethane (anthraquinodimethane) derivatives, the metal complex of oxine (8-quinolinole) derivatives such as three (oxine) aluminium (tris (8-hydroxyquinolinate) aluminum:Alq3), metal phthalocyanine (metal phthalocyanine), 3-(4-biphenyl)-5-(4-tert-butyl-phenyl)-4-phenyl-1, 2, 4-triazole (3-(4-biphenyl)-5-(4-t-butylphenyl)-4-phenyl-1, 2, the triazole derivative such as 4-triazole:TAZ), 2-(4-xenyl)-5-(the 4-tert-butyl group)-1, 3, 4-oxadiazole (2-(4-biphenylyl)-5-(4-t-butyl)-1, 3, 4-oxadiazole:PBD) oxadiazole derivative such as Deng, buckyballs, C60, the fullerenes such as carbon nano-tube (carbon nanotube).But be not limited to above-mentioned material.
The material of negative electrode 4 can use the work function in the region contacted with electron supplying layer 34 low, negative electrode overall reflective and through the little material of loss.Particularly, negative electrode 4 can use the metals such as Al, Mg, Ag, Au, Ca, Li or its compound, or the alloy etc. containing above-mentioned metal, makes to consist of individual layer or it is stacked.In addition, thin lithium fluoride or lithia etc. can be formed in the region contacted with electron supplying layer 34, control Electron Injection Characteristics.The thickness of negative electrode 4 is such as 10nm.As mentioned above, in present embodiment, adopt the side in film forming face, namely negative electrode side releases the top lighting structure of light.Therefore, negative electrode 4 is semipermeable electrode, and the mean value for the transmitance of the light of 400 ~ 700nm wavelength is such as more than 20%.The thickness etc. of such as electrode can be utilized to adjust transmitance.Although eliminate diagram in Fig. 1 and Fig. 2, negative electrode 4 is connected with extraction electrode (distribution electrode).
When further on negative electrode 4 during stacked diaphragm seal, such as, can be formed by steam and the little transparent inorganic material of OTR oxygen transmission rate.The material of diaphragm seal such as can use silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminium oxide (AlOx), aluminium nitride (AlNx) etc.
Be called that the material of the wall part 5 of dike such as can use the photoresist of fluorine-containing composition.By making it fluorine-containing, liquid towards material can play the effect of liquid repellency, therefore when using rubbing method film forming, can suppress liquid stream (so-called overlap).And, preferably form wall part 5 by the material with light-proofness.
At this, compared with green (G) light-emitting component, the frontal brightness of blue (B) and red (R) light-emitting component, the change of the easier luminous efficiency caused because of peak wavelength shift, produces the luminance fluctuation exceeding permissible range.Wherein, compared with red (R), the luminance fluctuation being changed the blueness (B) caused by resonator optical path length is larger.Therefore, in the present embodiment, with blue (B) light-emitting component for object, though in the course of processing thickness off-design value, resonator optical path length changes, and also can suppress the change of frontal brightness.For this reason, in a structure of the in-vention, make internal illumination spectrum, light go out spectrum depending on effect function spectrum and the defeated device that resonates and meet aftermentioned condition.So-called internal illumination spectrum, refers to luminescence generated by light (PL) spectrum of luminescent material.So-called resonator output spectrum, refers to the spectrum of the light through resonator structure.Light looks the wavelength at the maximum place of effect function spectrum, is 555nm under photopic vision standard.
That is, as shown in Figure 3, make the peak wavelength of resonator output spectrum S2 (λ S2) be positioned at internal illumination spectrum S1 peak wavelength (λ S1) and, light is looked between the peak wavelength (that is, 555nm) of effect function spectrum.Because the peak wavelength of light depending on effect function spectrum is common practise therefore omits diagram.For convenience of description, be that the wavelength of maximum is called peak wavelength by luminous intensity.
As mentioned above, in the construction shown in fig. 1, owing to determining to make blueness (B) have the stacked thickness (design load) of the organic layer 3 of optimum resonance device optical path length, therefore, also determine the peak wavelength (desired value) of resonator output spectrum S2.Such as, when resonator optical path length (design load) is for 200nm, peak wavelength (desired value) is 470nm.In addition, light is 555nm depending on the peak wavelength of effect function spectrum.Therefore, in the present embodiment, from the above-mentioned luminescent material listed, option table reveals the luminescent material of internal illumination spectrum S1, makes internal illumination spectrum S1 meet above-mentioned position relationship, and forms luminescent layer 33 with this luminescent material.That is, from the above-mentioned luminescent material enumerated, select the material presenting desired spectrum to form luminescent layer.The luminescent material of peak wavelength in the scope of 450nm ~ 480nm of preferred internal illumination spectrum S1, and make the peak wavelength of resonator output spectrum S2 be positioned at long wavelength side relative to the peak wavelength of internal illumination spectrum S1.And then about the tilted shape of the long wavelength side of internal illumination spectrum S1, the inverse that best and light looks the slope of the short wavelength side of imitating function spectrum is approximately proportional.Especially, when blue (B), the rake of the long wavelength side of internal illumination spectrum S1 sharply changes, and the peak wavelength of resonator output spectrum S2 can be made to be positioned at this region jumpy.
As preferred example, as shown in Figure 4 and Figure 5, the luminous intensity variations rate R of the internal illumination spectrum S1 at peak wavelength (λ S2) place of resonator output spectrum S2 efor-0.03 [1/nm] below, be preferably-0.05 [1/nm] below.Fig. 4 is above-mentioned luminous intensity variations rate R when being 470nm (design load) to peak wavelength λ S2 ethe result that calculates is carried out with the relation of the rate of change of brightness RL (%) when thickness changes.Fig. 5 is the thickness of such as luminescent layer 33 when fluctuating near design load, calculates the result of front face brightness change.In example shown in Fig. 5, illustrate rate of change R in the drawing point of Fig. 4 efor result of calculation when-0.017 [1/nm] ,-0.034 [1/nm] ,-0.054 [1/nm].
The rate of change R of above-mentioned luminous intensity ethat the luminous intensity of the gradient of the internal illumination spectrum S1 at peak wavelength (λ S2) place at resonator output spectrum S2 divided by wavelength (λ S2) place is obtained, according to R ethe formula of [1/nm]=[dE (λ S2)/d λ]/E (λ S2) is tried to achieve.In addition, rate of change of brightness RL (%) is, when making the optimum film thickness meeting NTSC colorimetric purity be d0, and the rate of change of brightness within the scope of thickness deviation d0 ± 2nm.Being specially, is according to rate of change of brightness RL [%]=[difference that the brightness within the scope of d0 ± 2nm is maximum ~ minimum]/[brightness during d0] × 100 value of trying to achieve.As shown in Figure 4 and Figure 5, the luminous intensity variations rate R in the light-emitting component of blue (B) epreferably starting to produce-0.03 [1/nm] of luminance fluctuation inhibition below, being more preferably at can compared with-0.05 of high inhibition luminance fluctuation [1/nm] below.
In the present embodiment, although the rate of change R of the luminous intensity of the internal illumination spectrum S1 at the peak wavelength λ S2 place of preferred resonator output spectrum S2 emeet above-mentioned condition, but except making rate of change R emeet outside above-mentioned condition, or as rate of change R emeet the condition of replacement of above-mentioned condition, the condition met shown in Fig. 6 can also be set.Namely, the peak wavelength λ S2 of setting resonator output spectrum S2 is positioned at, on the rake of the long wavelength side of internal illumination spectrum S1 and between the corresponding wavelength of the scope (in Fig. 6 scope shown in solid line) of 90% ~ 50% of the maximum of the luminous intensity of internal illumination spectrum S1 (λ 90 ~ λ 50).
In order to meet above-mentioned various condition, be not limited to, by selecting luminescent material to adjust, such as, the peak wavelength of resonator output spectrum S2 (desired value) also to be regulated in the permissible range of colorimetric purity to meet above-mentioned relation.By the peak wavelength (desired value) regulating the thickness (design load) of organic layer 3 to regulate resonator output spectrum S2.Can also by selecting luminescent material and regulating thickness (design load) these two aspects of organic layer 3 to meet above-mentioned condition.
In resonator structure, the design that colorimetric purity has larger leeway can be carried out.On the other hand, the brightness of the light-emitting component of blue (B) and red (R) can produce because of the peak wavelength shift of resonator output spectrum S2 the luminance fluctuation exceeding permissible range.Such as, if the thickness (be equivalent to optical path length) corresponding with distance between mirrors is change about 5nm (about 5% of whole element thickness), and peak wavelength also changes about 5nm.For blue light emitting device, when the design load of peak wavelength is 470nm, if thickness increases 5nm, then the luminous efficiency change of the peak wavelength (being such as 475nm) after skew reaches more than 20%, therefore causes large brightness change and image quality reduction (brightness disproportionation).
Namely, be that owing to causing the reason of frontal image quality reduction (brightness disproportionation) peak wavelength shift of resonator output spectrum S2 and light look the relation of imitating function spectrum, therefore, in the present embodiment, the peak wavelength of resonator output spectrum S2 is made to be positioned at the peak wavelength of internal illumination spectrum S1 and light is looked between the peak wavelength (that is, 555nm under photopic vision standard) of effect function.Thus, when causing the peak wavelength of resonator output spectrum S2 (λ S2) to high luminous efficiency side skew because of mismachining tolerance, luminous output is reduced, on the contrary, when peak wavelength (λ S2) is to low luminous efficiency side skew, luminous output increases, thus can suppress the luminance fluctuation of frontal.Calculate and find, the peak wavelength (λ S2) of the situation low-resonance device output spectrum S2 of blue (B) is when the scope bias internal of ± 2nm, and the luminance fluctuation of frontal is within roughly ± 5%.
Light-emitting component shown in Fig. 1 forms the first and second reflection parts by reflecting electrode and semi-permeable electrode, but is not limited to this, also can be formed and electrode independently reflectance coating.Now, the anode in the element side of this reflectance coating and negative electrode can be transparency electrodes.
(the second execution mode)
Present embodiment is the variation of the first execution mode, is to replace blue (B) light-emitting component as the execution mode of object using red (R) light-emitting component.
Namely, when red (R) light-emitting component, as shown in Figure 7, the peak wavelength of resonator output spectrum S2 is made to be positioned at the peak wavelength (λ S1) of internal illumination spectrum S1 and light is looked between the peak wavelength (that is, 555nm) of effect function spectrum.
As mentioned above, shown in Fig. 1 when structure, determine the stacked thickness (design load) of organic layer 3, be best resonator optical path length to make for red (R), also determine the peak wavelength (desired value) of resonator output spectrum S2 thus.Such as, resonator optical path length (design load) for the peak wavelength (desired value) during 300nm be 620nm.In addition, light looks the peak wavelength of effect function spectrum is 555nm under photopic vision standard.Therefore, in the present embodiment, from the above-mentioned luminescent material listed, select the luminescent material of the internal illumination spectrum S1 presenting above-mentioned position relationship, form luminescent layer 33 by this luminescent material.The luminescent material of peak wavelength in the scope of 600nm ~ 640nm of preferred internal illumination spectrum S1, and the peak wavelength of resonator output spectrum S2 is positioned at short wavelength side relative to the peak wavelength of internal illumination spectrum S1.And then, the tilted shape of the short wavelength side of internal illumination spectrum S1 can be made to be that the inverse looking the inclination of the long wavelength side of imitating function spectrum with light is approximately proportional.Especially, when red (R), the peak wavelength of resonator output spectrum S2 can be positioned at, the luminous intensity region jumpy of the rake of the rising of the short wavelength side of internal illumination spectrum S1.
As the example more having choosing, according to the reason identical with the result of calculation of Fig. 4 with Fig. 5, the rate of change R of the luminous intensity of the internal illumination spectrum S1 at peak wavelength (λ S2) place of resonator output spectrum S2 efor more than+0.03 [1/nm], be preferably more than+0.05 [1/nm].
Further, in the present embodiment, although the rate of change R of the luminous intensity of the internal illumination spectrum S1 at the peak wavelength λ S2 place of preferred resonator output spectrum S2 emeet above-mentioned condition, but except making rate of change R emeet above-mentioned condition, or as making rate of change R emeet the replacement condition of above-mentioned condition, the condition met shown in Fig. 8 can also be set.Namely, the peak wavelength λ S2 of setting resonator output spectrum S2 is positioned at, on the rake of the short wavelength side of internal illumination spectrum S1 and between the corresponding wavelength of the scope (shown in the solid line of Fig. 8 scope) of 95% ~ 50% of the maximum of the luminous intensity of internal illumination spectrum S1 (λ 95 ~ λ 50).
In addition, identical with the situation of blue (B), in order to meet above-mentioned condition, be not limited to the selection to luminescent material, such as, also can be in the permissible range of colorimetric purity, regulate the peak wavelength of resonator output spectrum S2 (desired value) to meet above-mentioned relation.By the peak wavelength (desired value) regulating the thickness (design load) of organic layer 3 to regulate resonator output spectrum S2.Can also by selecting luminescent material and regulating thickness (design load) these two aspects of organic layer 3 to meet above-mentioned condition.
As mentioned above, when being object with the light-emitting component of red (R), also the peak wavelength of resonator output spectrum S2 is made to be positioned at the peak wavelength of internal illumination spectrum S1 and (namely light look the peak wavelength of effect function spectrum, be 555nm under photopic vision standard) between, thus, when causing the peak wavelength of resonator output spectrum S2 (λ S2) to high luminous efficiency side skew because of fabrication error, luminous output is reduced, contrary peak wavelength (λ S2) increases to luminous output during low luminous efficiency side skew, thus can suppress the luminance fluctuation of frontal.As shown in Figure 9, calculate and find, the peak wavelength of the situation low-resonance device output spectrum S2 of red (R) is when the scope bias internal of ± 2nm, and the luminance fluctuation of frontal is within ± 5%.
(the 3rd execution mode)
In the first embodiment with blue (B) light-emitting component for object, in this second embodiment with red (R) light-emitting component for object.But, the display unit formed by multiple RGB light-emitting component can have blueness (B) illustrated in the first and second execution modes and red (R) these two kinds of light-emitting components, can suppress blue (B) and red (R) both luminance fluctuations.
(the 4th execution mode)
In the first ~ three execution mode, the example of the thickness adjustment RGB resonator optical path length by changing hole injection layer 31 is illustrated.But be not limited to this, also as shown in Figure 10, RGB resonator optical path length can be adjusted by the thickness changing luminescent layer 33.
(the 5th execution mode)
In the first ~ four execution mode, be illustrated for the light-emitting component of top lighting structure.But being not limited to this structure, also can be bottom-emission structure as shown in figure 11.In example shown in Figure 11, by making the reflecting electrode 21 of Fig. 1 be semi-permeable electrode, making negative electrode 4 be reflecting electrode, and becoming bottom-emission structure.But the present invention is not limited to the structure shown in Figure 11.
(the 6th execution mode)
Below, the example of the operation of the RGB light-emitting component shown in shop drawings 1 is described.
First, the film of reflecting electrode 21, transparency electrode 22 is formed successively with evaporation or sputtering method etc.The pattern of above-mentioned electrode 21,22 is formed by photolithography.Then, be coated with fluorine-containing photoresist on substrate 1, after dry also film forming, form the wall part 5 of the pattern had as shown in Figure 1 by such as photolithography.For passive-type when, after electrode 21,22 is formed as striated, form wall part 5.On the other hand, for when active, electrode 21,22 is formed as the island be connected with each drive circuit, then forms wall part 5.
Then, with such as inkjet nozzle etc. the fluent material of hole injection layer 32 is coated in the region of being separated by wall part 5, dry and film forming.Rubbing method is utilized to be coated with respectively each element similarly for hole input layer 32, luminescent layer 33, and film forming.By regulating the coating weight of such as fluent material to regulate thickness.Then, electron supplying layer 34 and negative electrode 4 is formed successively with vapour deposition method.Can use the masks such as metal mask, or utilize the dykes and dams shape of wall part 5, target 4 forms pattern.Such as passive-type when, the pattern of negative electrode 4 can be formed as striated.On the other hand, for when active, can not pattern be formed, and become bucking electrode.By above-mentioned operation, can the RGB light-emitting component shown in shop drawings 1 and Fig. 2.
As mentioned above, according to the first ~ six execution mode, in the light-emitting component with resonator structure, by making the peak wavelength of resonator output spectrum look between the peak wavelength of effect function spectrum at the peak wavelength of internal illumination spectrum and light, can suppress because of the luminance fluctuation caused by resonator optical path length inequality.In other words, even if thickness off-design value, because luminance fluctuation is little, and can tolerate that thickness is uneven to a certain extent, thus can boost productivity and reduce costs.
Technology described in above-mentioned execution mode, except can be applicable to organic film light-emitting component, also can be applicable to the inorganic thin film light-emitting component (electroluminescence, Light-Emitting Diode) with superimposed elements structure.In addition, can be applicable on surface with the light emitting display of rectangular configuration light-emitting component.Also can be the structure from the first and second reflection part two side transmission luminescences.Further, the present invention is not limited to RGB tri-look, also can comprise a kind of look or two kinds of looks, or other colors.
Above, in conjunction with concrete execution mode to invention has been detailed description, but in the scope not departing from spirit of the present invention and claim, can can carry out various replacement, distortion and change to mode and details, this is self-explantory for the those skilled in the art with this area general knowledge.Therefore, protection scope of the present invention is not limited to the record of above-mentioned execution mode and accompanying drawing, and should determine according to the record of claims and equivalent execution mode thereof.

Claims (7)

1. a light-emitting component, is characterized in that:
Have resonator structure, this resonator structure comprises the first reflection part, the second reflection part and organic layer,
The resonator output spectrum of described resonator structure reaches the wavelength of maximum, reaches the wavelength of maximum and light to reach depending on imitating function between the wavelength of maximum at the internal illumination spectrum of described organic layer,
The peak wavelength λ of resonator output spectrum is positioned at, and described internal illumination is spectrally between the wavelength that the scope of 90% ~ 50% of maximum is corresponding to luminous intensity.
2. light-emitting component according to claim 1, is characterized in that:
Described resonator output spectrum reaches the rate of change R of the luminous intensity of the described internal illumination spectrum at the wavelength place of maximum ebelow-0.03.
3. light-emitting component according to claim 2, is characterized in that:
Described internal illumination spectrum reaches the wavelength of maximum in the scope of 450nm ~ 480nm,
The wavelength that the wavelength that described resonator output spectrum reaches maximum reaches maximum relative to described internal illumination spectrum is positioned at long wavelength side.
4. light-emitting component according to claim 2, is characterized in that:
Described internal illumination spectrum reaches the wavelength of maximum in the scope of 600nm ~ 640nm,
The wavelength that the wavelength that described resonator output spectrum reaches maximum reaches maximum relative to described internal illumination spectrum is positioned at short wavelength side.
5. a display unit, is characterized in that:
There is multiple resonator structure, the organic layer that this resonator structure comprises the first reflection part, the second reflection part and is configured between described first reflection part and the second reflection part, the part that the light resonated occurs between described first reflection part and described second reflection part through described first reflection part or described second reflection part through
The wavelength that the resonator output spectrum of described resonator structure reaches maximum reaches the wavelength of maximum and light at the internal illumination spectrum of described organic layer and to reach depending on imitating function between the wavelength of maximum,
The peak wavelength λ of resonator output spectrum is positioned at, and described internal illumination is spectrally between the wavelength that the scope of 90% ~ 50% of maximum is corresponding to luminous intensity.
6. display unit according to claim 5, is characterized in that:
Described resonator output spectrum reaches the rate of change R of the luminous intensity of the described internal illumination spectrum at the wavelength place of maximum ebelow-0.03.
7. display unit according to claim 6, is characterized in that:
In a described resonator structure, described internal illumination spectrum reaches the wavelength of maximum in the scope of 450nm ~ 480nm, the wavelength that the wavelength that described resonator output spectrum reaches maximum reaches maximum relative to described internal illumination spectrum is positioned at long wavelength side
In resonator structure described in another, described internal illumination spectrum reaches the wavelength of maximum in the scope of 600nm ~ 640nm, and the wavelength that the wavelength that described resonator output spectrum reaches maximum reaches maximum relative to described internal illumination spectrum is positioned at short wavelength side.
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CN109326209A (en) * 2017-08-01 2019-02-12 群创光电股份有限公司 Show equipment
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