CN104600219A - New method for cleanly and nondestructively transferring organic semiconductor thin film - Google Patents
New method for cleanly and nondestructively transferring organic semiconductor thin film Download PDFInfo
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- CN104600219A CN104600219A CN201410797710.1A CN201410797710A CN104600219A CN 104600219 A CN104600219 A CN 104600219A CN 201410797710 A CN201410797710 A CN 201410797710A CN 104600219 A CN104600219 A CN 104600219A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a new method for cleanly and nondestructively transferring an organic semiconductor thin film. The new method comprises the following specific steps of forming a solid-liquid interface through the clean deionized water and the organic semiconductor thin film which is arranged on a hydrophobic interface; forming a solid-solid interface of the ice and the thin film after the water which is placed in a freezing chamber is frozen; separating the ice and the thin film from the hydrophobic interface and transferring the ice and the thin film to another hydrophobic or hydrophilic substrate interface; placing the ice and the thin film in a freezer dryer to remove the ice after sublimation and implementing the clean and nondestructive transfer of the organic semiconductor thin film. According to the new method for cleanly and nondestructively transferring the organic semiconductor thin film, the traditional method for transferring organic semiconductor thin films with a polymer as a medium can be replaced, the cost is low, the environment-friendly effect is achieved, and the experimental operation is easy.
Description
Technical field
The present invention relates to organic semiconductor thin-film and devices field, a kind of method shifting organic semiconductor thin-film is provided.
Background technology
Organic semiconductor thin-film refers to the class organic compound thin film material of conductivity between organic insulator and organic conductor, it mainly a class comprise organic molecule and the polymer of pi-conjugated structure.It is mainly used in the fields such as organic field effect tube (OFET), organic photovoltaic cell (OSC), Organic Light Emitting Diode (OLED) organic sensor (Organic Sensor).
The method of tradition transfer organic semiconductor thin-film, mainly through macromolecule medium (as PDMS, Thermal release adhesive tape etc.) transfer of semiconductor film, but Problems existing be transfer after the macromolecule medium surface of caudacoria of not easily removing and removing have residual impurity, performance for semiconductive thin film has impact to a certain degree, can affect overall performance and the application of organic semiconductor thin-film device.
summary of the inventionthe object of this invention is to provide a kind of new method that totally can can't harm transfer organic semiconductor thin-film, substitute the method that tradition uses polymeric media transfer organic semiconductor thin-film.
In order to achieve the above object, the technical solution adopted in the present invention is:
A kind of new method of clean harmless transfer organic semiconductor thin-film, it is characterized in that: its concrete steps are as follows: utilize the organic semiconductor thin-film on clean deionized water and hydrophobic interface to form solid-liquid interface, be placed in after refrigerating chamber water build-ups ice, form the solid-solid interface of ice and film, use tweezers ice and film can be separated from hydrophobic interface and be transferred to other hydrophobic or hydrophilic interface base, finally be placed in freeze drier by removing after ice distillation, realize the clean harmless transfer of organic semiconductor thin-film.
Described transfer method is the transfer with film that is separated being realized film and hydrophobic substrate by the solid-solid interface adhesion be greater than between film with hydrophobic substrate of the adhesion between ice with organic semiconductor thin-film between solid-solid interface.
Described clean transfer is that clean deionized water forms clean ice, after ice and organic semiconductor thin-film are transferred to other interfaces, utilize freeze drying principle by ice distillation removing, realizes the transfer of undoped organic semiconductor thin-film.
The organic semiconductor thin-film non-impurity-doped that described transfer totally can't harm, free from admixture remains, and film deteriorates is less, the crystalline texture of film and pattern on hydrophobic substrate before remaining transfer.
Compared with the method for traditional transfer organic semiconductor thin-film, Advantages found of the present invention exists:
1, deionized water forms ice and does medium, and compared with the transfer of the non-medium of traditional polymer, environmental protection at a low price, is easy to experimental implementation;
2, use the freeze drying principle of freeze drier, ice is directly distilled from solid phase and becomes gas phase, without liquid phase, reduce the damage to organic semiconductor thin-film and doping, form harmless clean film;
3, the clean organic semiconductor thin-film obtained can prepare the unsettled sound of high-performance, optical, electrical, hot, power etc. related device.
Accompanying drawing explanation
Fig. 1 is the metallomicroscope image of film before the transfer of a kind of polymer semiconductor thin film;
Fig. 2 is the atomic force microscope images (AFM) of film before the transfer of a kind of polymer semiconductor thin film;
Fig. 3 is the schematic diagram of ice medium from hydrophobic substrate stripping semiconductor film;
After Fig. 4 Si/SiO2 substrate that to be a kind of polymer semiconductor modify from Cytop is peeled off, the residual metallomicroscope figure of film in substrate;
Fig. 5 is the metallomicroscope image of a kind of polymer semiconductor thin film transfer rear film;
Fig. 6 is the atomic force microscope images (AFM) of a kind of polymer semiconductor thin film transfer rear film.
Fig. 7 is the change of its transfer curve before and after the transistor transfer of a kind of polymer semiconductor.
Embodiment
Embodiment 1
The present embodiment is that medium is by the Si/SiO at Cytop modified with ice
2substrate on the polymer semiconductor thin film of spin-coating film be transferred in common Si/SiO2 substrate, realize the method for harmless clean transfer.
Embodiment process comprises: the preparation of the front film of transfer, stripping film process, divert film process.
1, the preparation of the front film of transfer: compound concentration is the polymer samples solution of 5mg/l concentration, and heating is fully dissolved in 60 DEG C of thermal station; Use acetone, ethanol, water ultrasonic cleaning Si/SiO
2silicon chip, dry, silicon chip use 1min, 3000r rotating speed spin coating Cytop, to be placed in thermal station 180 DEG C of heating 15min after spin coating, to obtain the Si/SiO2 silicon chip that Cytop modifies; In glove box, polymer solution is dripped on the silicon chip of Cytop modification, use 20,4000r parameter spin coating polymer solutions, thin polymer film can be formed at hydrophobicity silicon chip surface; Be the image of metallomicroscope 50 times of object lens of thin polymer film as Fig. 2, Fig. 3 is the atomic force microscope feature image of thin polymer film 2um size.
2, the process (see figure 3) of stripping film: the silicon chip of spin on polymers semiconductor film is placed in-15 DEG C of refrigerating chambers, a small amount of deionized water (DI) is extracted with syringe, syringe is used to drip on polymer semiconductor thin film several DI, DI is drawout on film, then freezing 4h in refrigerating chamber is placed on, in refrigerating process, DI can build-up ice very soon on film, a kind of cohesive force can be formed between ice and film, because its adhesion is greater than the adhesion at film and Cytop interface, use tweezers film can be separated with Cytop substrate, as Fig. 4, after film is separated from hydrophobic substrate, the residual condition of film on hydrophobic substrate, as can be seen from the figure, in substrate under 50 times of object lens are observed, film is basic noresidue, can peel off from substrate completely together with ice.
3, the process of divert film: will ice medium be used to be transferred to cleaned Si/SiO from the thin polymer film hydrophobic substrate stripping in refrigerating chamber
2on the interface of silicon chip, again by freeze drier precooling 30min, when condenser temperature is down to-58 DEG C, be placed in as the silicon chip of target substrate, the thin polymer film of transfer and the ice medium of transfer fast in freeze drier, open vacuum pump evacuation, after ice all distils after vacuumizing 4h, take out Si/SiO
2/ polymer film, realizes the clean harmless transfer of film; As Fig. 5, be transferred to the impaired situation of rear film in new substrate, compared with Fig. 2, substantially not having of the caudacoria of transfer is damaged, the intact primary morphology remaining film; As Fig. 6, be after being transferred to new substrate, the film morphology of atomic force microscope scanning micron-scale, compared with Fig. 3, after transfer, the micro nano structure pattern of film does not substantially have vicissitudinous, achieves the clean harmless transfer of polymer semiconductor thin film.
Embodiment 2
The present embodiment is being the Si/SiO that Cytop modifies
2the P3HT(polythiophene that substrate makes) thin-film transistor (TFT) device, by ice medium, device is transferred to common Si/SiO
2after substrate, compare the change of its device performance before and after transfer.
Embodiment process:
According to preparation process spin coating P3HT semiconductive thin film in Cytop substrate of film before the transfer of embodiment 1, after plating electrode, prepare the P3HT thin-film transistor before transfer, device is transferred to Si/SiO by the transfer method identical by embodiment 1
2in substrate, the device after obtaining shifting.Fig. 7 is the transfer curve change of P3HT transistor device before and after transfer, can find out that the performance transfer front and back change of device is little.OTFT device is transferred to hydrophilic interface from hydrophobic interface by transfer process, and its performance change is less, illustrates that transfer process achieves the clean harmless transfer of P3HT semiconductive thin film.
Claims (4)
1. one kind totally can't harm the new method of transfer organic semiconductor thin-film, it is characterized in that: its concrete steps are as follows: utilize the organic semiconductor thin-film on clean deionized water and hydrophobic interface to form solid-liquid interface, be placed in after refrigerating chamber water build-ups ice, form the solid-solid interface of ice and film, ice and film are separated from hydrophobic interface and are transferred to other hydrophobic or hydrophilic interface base, finally be placed in freeze drier by removing after ice distillation, realize the clean harmless transfer of organic semiconductor thin-film.
2. the new method of a kind of clean harmless transfer organic semiconductor thin-film according to claim 1, is characterized in that: described transfer method is the transfer with film that is separated being realized film and hydrophobic substrate by the solid-solid interface adhesion be greater than between film with hydrophobic substrate of the adhesion between ice with organic semiconductor thin-film between solid-solid interface.
3. the new method of a kind of clean harmless transfer organic semiconductor thin-film according to claim 1, it is characterized in that: described clean transfer is that clean deionized water forms clean ice, after ice and organic semiconductor thin-film are transferred to other interfaces, utilize freeze drying principle by ice distillation removing, realize the transfer of undoped organic semiconductor thin-film.
4. the new method of a kind of clean harmless transfer organic semiconductor thin-film according to claim 1, it is characterized in that: the organic semiconductor thin-film non-impurity-doped that described transfer totally can't harm, free from admixture remains, film deteriorates is less, the crystalline texture of film and pattern on hydrophobic substrate before remaining transfer.
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| CN201410797710.1A CN104600219A (en) | 2014-12-19 | 2014-12-19 | New method for cleanly and nondestructively transferring organic semiconductor thin film |
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| CN201410797710.1A CN104600219A (en) | 2014-12-19 | 2014-12-19 | New method for cleanly and nondestructively transferring organic semiconductor thin film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065735A (en) * | 2018-06-19 | 2018-12-21 | 广东工业大学 | A kind of method for accurately building of two-dimensional material Robert Van de Walle hetero-junctions |
| CN110767805A (en) * | 2018-07-26 | 2020-02-07 | 湖北大学 | High-mobility organic thin film transistor and preparation method thereof |
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| CN1850691A (en) * | 2006-05-25 | 2006-10-25 | 上海交通大学 | Method for preparing surface insulated titanium dioxide nano film of glass substrate |
| WO2006119917A1 (en) * | 2005-05-09 | 2006-11-16 | Polyic Gmbh & Co.Kg | Electronic component |
| CN102592973A (en) * | 2012-03-02 | 2012-07-18 | 山东师范大学 | Transfer method of large area graphene |
| CN103342472A (en) * | 2013-07-11 | 2013-10-09 | 常州二维碳素科技有限公司 | Method for transferring graphene film |
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2014
- 2014-12-19 CN CN201410797710.1A patent/CN104600219A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006119917A1 (en) * | 2005-05-09 | 2006-11-16 | Polyic Gmbh & Co.Kg | Electronic component |
| CN1850691A (en) * | 2006-05-25 | 2006-10-25 | 上海交通大学 | Method for preparing surface insulated titanium dioxide nano film of glass substrate |
| CN102592973A (en) * | 2012-03-02 | 2012-07-18 | 山东师范大学 | Transfer method of large area graphene |
| CN103342472A (en) * | 2013-07-11 | 2013-10-09 | 常州二维碳素科技有限公司 | Method for transferring graphene film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065735A (en) * | 2018-06-19 | 2018-12-21 | 广东工业大学 | A kind of method for accurately building of two-dimensional material Robert Van de Walle hetero-junctions |
| CN110767805A (en) * | 2018-07-26 | 2020-02-07 | 湖北大学 | High-mobility organic thin film transistor and preparation method thereof |
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Application publication date: 20150506 |