CN104596659B - Temperature sensing circuit of display, display and operation method thereof - Google Patents
Temperature sensing circuit of display, display and operation method thereof Download PDFInfo
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- CN104596659B CN104596659B CN201510058107.6A CN201510058107A CN104596659B CN 104596659 B CN104596659 B CN 104596659B CN 201510058107 A CN201510058107 A CN 201510058107A CN 104596659 B CN104596659 B CN 104596659B
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- 238000000034 method Methods 0.000 title claims abstract 3
- 238000010792 warming Methods 0.000 claims description 54
- 230000008878 coupling Effects 0.000 claims description 45
- 238000010168 coupling process Methods 0.000 claims description 45
- 238000005859 coupling reaction Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 19
- 238000011017 operating method Methods 0.000 claims description 17
- 230000036413 temperature sense Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
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Abstract
A temperature sensing circuit applied to a display, the display and an operation method thereof are provided, wherein the sensing circuit comprises a temperature sensing module, a reading module and a resetting module; the temperature sensing module is used for providing a sensing voltage potential according to the sensed temperature, the reading module is used for receiving the sensing voltage potential and determining whether to output the sensing voltage potential according to the first control signal, and the resetting module is used for receiving the second control signal and determining whether to reset the sensing voltage potential to a low voltage potential according to the second control signal.
Description
Technical field
The invention relates to a kind of temperature sensing circuit, in particular to a kind of temperature sensing applied to display
Circuit and its operating method.
Background technology
Well known liquid crystal display device causes to be set to liquid crystal display device base due to that can be influenced by temperature change
The gate driving circuit of plate occurs that leakage current is excessive or driving current is too low happens, and then causes to show that picture is different
Often, therefore liquid crystal display device needs temperature detecting element to adjust the work of gate driving circuit to grasp Current Temperatures at any time
Voltage makes liquid crystal display device that can not show image normally due to the influence that temperature changes, therefore how accurate temperature detecting element is
It is a subject to detect the current temperature of substrate.
Invention content
To solve the above problems, the present invention provides a kind of temperature sensing circuit, including：
One warming module, has a first end and a second end, and the first end of the warming module is receiving one
High voltage potential, the warming module according to the temperature sensed to provide a sensing voltage current potential to the second end, and the temperature
Sense module be the diode of multiple concatenations or be multiple concatenations transistor, and the gate terminal electric property coupling of each transistor is each
The drain end of transistor；
One read module with the warming module electric property coupling, to receive the sensing voltage current potential, and is controlled according to one first
Whether signal deciding processed exports the sensing voltage current potential；And
One resetting module, and the warming module electric property coupling, to receive a second control signal, and according to second control
Whether signal deciding processed by the sensing voltage current potential resets to a low voltage potential.
Above-mentioned temperature sensing circuit, the temperature sensing circuit further include：
One drive module, and the resetting module electric property coupling, to receive the first control signal and export second control
Signal processed is to the resetting module, which is a phase inverter, and the first control signal and the second control signal are anti-
Phase.
Above-mentioned temperature sensing circuit, the temperature sensing circuit further include：
One capacitance has a first end and a second end, the first end of the capacitance and the read module electric property coupling, should
The second end of capacitance and the low voltage potential electric property coupling.
Above-mentioned temperature sensing circuit, the resetting module be a first transistor, have a first end, a second end and
One gate terminal, the first end of the first transistor and the second end electric property coupling of the warming module, the first transistor
The gate terminal to receive the second control signal, the second end of the first transistor to the electrical coupling of the low voltage potential
It connects.
Above-mentioned temperature sensing circuit, the read module be a second transistor, have a first end, a second end and
One gate terminal, the first end of the second transistor is receiving the sensing voltage current potential, the gate terminal of the second transistor
To receive the first control signal, the second end of the second transistor is to the first end electric property coupling with the capacitance.
To solve the above problems, the present invention also provides a kind of display, including：
There are one substrate multiple pixels to be arranged on；
Temperature sensing circuit as described in claims 1 is set on the substrate；And
One control unit, the start to the sensing voltage current potential according to the temperature sensing circuit.
To solve the above problems, the present invention also provides a kind of operating method of temperature sensing circuit, the temperature sensing circuit
There is a first end and a second end including a warming module, a read module and a resetting module, the warming module, it should
Resetting module is electrically coupled between the second end and a low voltage potential of the warming module, the read module and the warming
The second end electric property coupling of module, the operating method of the temperature sensing circuit include：
Using the warming module according to the temperature that senses provide a sensing voltage current potential to the warming module this second
End；
The read module is made to export the sensing voltage current potential according to a first control signal；And
Make the resetting module that the sensing voltage current potential be reset to the low voltage potential according to a second control signal.
The operating method of above-mentioned temperature sensing circuit, the temperature sensing circuit further include a drive module, the temperature sense
The operating method of slowdown monitoring circuit further includes：
The first control signal is received using the drive module and exports the second control signal to the resetting module, this
One control signal is reverse phase with the second control signal.
The operating method of above-mentioned temperature sensing circuit, the temperature sensing circuit further include a capacitance, with the reading mould
Block electric property coupling, the operating method of the temperature sensing circuit further include：
The sensing voltage current potential of read module output is stored using the capacitance.
The operating method of above-mentioned temperature sensing circuit, further includes：
Read the sensing voltage current potential for being stored in the capacitance.
Comprehensive the above, since the temperature sensing circuit embodiment of the present invention is set on the substrate in display,
Temperature sensing circuit can directly detect the Current Temperatures of substrate, and the warming module of temperature sensing circuit is by the two of multiple concatenations
Pole pipe is made of the transistor of multiple concatenations, therefore with higher warming sensitivity, can more accurately be detected current
Temperature reduces display and happening for mistake is shown due to temperature changes, in addition, the temperature sensing circuit embodiment of the present invention
It only needs that by a first control signal temperature sensing can be carried out, the convenience of temperature sensing is significantly increased, and due to this
The temperature sensing circuit embodiment of invention is that the temperature of current substrate is judged using sensing voltage current potential, therefore with more relatively wide
Detection temperature range.
Description of the drawings
Fig. 1 is the display schematic diagram of the temperature sensing circuit with the present invention；
Fig. 2 is the temperature sensing circuit embodiment schematic diagram of the present invention；
Fig. 3 A are the temperature sensing circuit embodiment curve graph one of the present invention；
Fig. 3 B are the temperature sensing circuit embodiment curve graph two of the present invention；
Fig. 4 is the step schematic diagram of the temperature sensing circuit operating method of the present invention.
Wherein, reference numeral：
10 substrate, 11 temperature sensing circuit
12 power control unit, 13 control unit
14 gate drivers, 15 display unit
151 pixel unit, 16 data driver
161 data line, 110 drive module
112 warming modules 114 reset module
116 read module, 300,302,304,306 step
C capacitance S1 first control signals
S2 second control signal S3 voltage control signals
Vdd high voltage potential Vss low voltage potentials
Von warming cross-pressure Vo sensing voltage current potentials
Vsens output voltage current potentials VGHThe operating voltage of gate drivers
T1, T2, T3, T4, Tn transistor
Specific embodiment
Referring to Fig. 1, Fig. 1 is the display embodiment of the temperature sensing circuit with the present invention, the display packet
It is aobvious to include a substrate 10, a temperature sensing circuit 11, a power control unit 12, a control unit 13, a gate drivers 14, one
Show 15 and one data driver 16 of unit.Temperature sensing circuit 11, power control unit 12, control unit 13, gate driving
Device 14, display unit 15 and data driver 16 are set on substrate 10, and display unit 15 includes multiple pixel units 151,
Each pixel unit 151 and 16 electric property coupling of gate drivers 14 and data driver, each pixel unit 151 is to basis
Drive signal that gate drivers 14 export and open, and by multiple data lines 161 receive that data driver 16 exported it is aobvious
Registration evidence.
Temperature sensing circuit 11 and 12 electric property coupling of power control unit to receive power supply, temperature sensing circuit 11 more with control
13 electric property coupling of unit processed, to the output voltage current potential Vsens that exports according to the temperature of sensing and calculate to control unit
13；Control unit 13 and 12 electric property coupling of power control unit, to be obtained according to the output voltage current potential Vsens received
The Current Temperatures of substrate 10 at present provide a voltage control signal S3 to power control unit 12 further according to Current Temperatures, make electricity
Source control unit 12 can be provided to the operating voltage V of gate drivers 14 according to the voltage control signal S3 adjustment receivedGH；Grid
Driver 14 and 151 electric property coupling of multiple pixel units in display unit 15, to be provided according to power control unit 12
Operating voltage make multiple pixel units 151 that can be opened during correct.Since the temperature sensing circuit 11 of the present invention can
Be directly arranged on substrate 10, can more directly and accurately sensing substrate 10 temperature change, make power control unit 12 can be more
Accurately adjustment is provided to the operating voltage V of gate drivers 14GH, therefore gate drivers 14 can be greatly decreased because temperature influences
And cause happening for multiple malfunctions of pixel units 151.
Referring to Fig. 2, Fig. 2 is 11 embodiment of temperature sensing circuit of the present invention, temperature sensing circuit 11 includes a driving
Module 110, a warming module 112, one resetting module 114, a read module 116 and a capacitance C.
Drive module 110 may be, for example, a phase inverter and with resetting 114 electric property coupling of module, and drive module 110 is connecing
It receives a first control signal S1 and exports a second control signal S2 and extremely reset module 114, and first control signal S1 and second
It is reverse phase to control signal S2.Drive module 110 may include an a first transistor T1 and second transistor T2, the first transistor
T1 has a first end, a second end and a gate terminal, and the first end of the first transistor T1 is high to receive one with gate terminal
The second end of voltage potential Vdd, the first transistor T1 are then to export second control signal S2.Second transistor T2 has one
First end, a second end and a gate terminal, the first end of second transistor T2 and the electrical coupling of second end of the first transistor T1
Connect, the gate terminal of second transistor T2 to receive first control signal S1, the second end of second transistor T2 to low electricity
Piezoelectric position Vss electric property couplings, wherein low voltage potential Vss can be ground connection.Therefore when first control signal S1 is operating voltage
Current potential, during high voltage potential Vdd as the aforementioned, second transistor T2 can be by unlatching and by the of the first end of second transistor T2
Two control signal S2 are pulled down to low voltage potential Vss, therefore export a second control signal with first control signal S1 reverse phases
S2.And when first control signal S1 is low voltage potential, second transistor T2 can be closed, and the first end of second transistor T2 is then
The operating voltage current potential that the second end of output the first transistor T1 is provided, thus export with first control signal S1 reverse phases the
Two control signal S2.In addition, to may also be anti-grid and grid, anti-and grid etc. exportable anti-with input signal for aforementioned drive module 110
The logic gate of the output signal of phase.
112 electric property coupling of warming module resets module 114, has a first end and a second end, warming module 112
First end to receive high voltage potential Vdd, the second end of warming module 112 is then to export sensing voltage current potential Vo,
And warming module 112 is concatenated by multiple transistor Tn, each transistor Tn has a first end, a second end and a grid
Extremely, the first end of each transistor of gate terminal electric property coupling of each transistor Tn, warming module 112 also can be by multiple in addition
Diode concatenates.When warming 112 sensing temperature of module, warming module 112 can because Current Temperatures difference and in crystalline substance
There is different warming cross-pressure Von, warming module 112 is the meter using Vo=Vdd-Von between body pipe Tn strings or diode string
Calculation mode obtains sensing voltage current potential Vo, and since the number of transistor or diode can be directly proportional to temperature susceplibility, warming
Module 112 is formed again by concatenating multiple transistors or diode, therefore the sensing voltage current potential Vo exported can have higher temperature
Spend susceptibility.
Module 114 and 110 electric property coupling of warming module 112 and drive module are reset, resetting module 114 is to receive
The second control signal S2 of the output of drive module 110 simultaneously decides whether according to second control signal S2 by sensing voltage current potential Vo weights
It is set to low voltage potential Vss.Resetting module 114 is a transistor T3, has a first end, a second end and a grid
End, the first end of transistor T3 and the second end electric property coupling of warming module 112, the gate terminal of transistor T3 is receiving second
Control signal S2, the second end of transistor T3 then to low voltage potential Vss electric property couplings.When second control signal S2 is work
When making voltage potential, transistor T3 is opened, therefore the sensing voltage current potential Vo of the first end of transistor T3 can be reset as low electricity
Piezoelectric position Vss, and when second control signal S2 is low voltage potential, transistor T3 is closed, therefore the first end of transistor T3
Export the sensing voltage current potential Vo sensed.
Read module 116 and 112 electric property coupling of warming module, to receive sensing voltage current potential Vo, and according to the first control
Signal S1 processed decides whether to export sensing voltage current potential Vo to capacitance C.Read module 116 is a transistor T4, has one the
One end, a second end and a gate terminal, the first end of transistor T4 is receiving sensing voltage current potential Vo, the grid of transistor T4
Extremely to receive first control signal S1, the second end of transistor T4 to capacitance C electric property couplings.Work as first control signal
When S1 is operating voltage current potential, sensing voltage current potential Vo and is read and stored to capacitance C to open by transistor T4, and ought the
When one control signal S1 is low voltage potential, transistor T4 no longer reads sensing voltage current potential Vo to close.
Capacitance C has a first end and a second end, the first end of capacitance C and the electrical coupling of second end of read module 116
It connects, second end and the low voltage potential Vss electric property couplings of capacitance C, capacitance C is to store the sense that read module 116 is exported
Voltage potential Vo is surveyed, and exports sensing voltage current potential Vo after storage read module 116 stops output sensing voltage current potential Vo
For output voltage current potential Vsens, and output voltage current potential Vsens exported to the control unit 13 described in Fig. 1 current to judge
The temperature of substrate.
Next please also refer to Fig. 2, Fig. 3 A, Fig. 3 B and Fig. 4.Fig. 3 A are 11 embodiment of temperature sensing circuit of the present invention
First control signal S1 and sensing voltage current potential Vo curve graph at different temperatures, wherein 80 DEG C of Vo@are sensing voltage
Current potential Vo is 80 DEG C of voltage value in temperature, and 25 DEG C of Vo@are sensing voltage current potential Vo in the voltage value that temperature is 25 DEG C, Vo@- 25
DEG C it is sensing voltage current potential Vo in the voltage value that temperature is -25 DEG C.Fig. 3 B are the output voltage current potential Vsens of capacitance C in difference
At a temperature of curve graph, 80 DEG C of Vsens@are voltage values of the output voltage current potential Vsens when temperature is 80 DEG C, 25 DEG C of Vsens@
It is to feel output voltage current potential Vsens in the voltage value that temperature is 25 DEG C ,@- 25 DEG C of Vsens exists for sense output voltage current potential Vsens
Temperature is -25 DEG C of voltage value.Fig. 4 is the operating method step schematic diagram of 11 embodiment of temperature sensing circuit of the present invention.
When first control signal S1 is operating voltage current potential, i.e. marked in Fig. 3 A during A, warming module 112 feels
Survey Current Temperatures and output sensing voltage current potential Vo (steps 300), transistor when first control signal S1 is operating voltage current potential
T2 is opens, and second control signal S2 is close to low voltage potential Vss, and transistor T3 is closes, therefore sensing voltage current potential at this time
The voltage of Vo is charged by high voltage potential Vdd and is begun to ramp up, as shown in the sensing voltage current potential Vo of A between Fig. 3 A mid-terms, not
The sensing voltage current potential Vo sensed when synthermal all rises to higher voltage potential, and transistor T2 and transistor T4 at this time
It opens, therefore transistor T2 outputs one have the second control signal S2 of low voltage potential, and since second control signal S2 is
Low voltage potential, therefore transistor T3 is closes.At this time because transistor T4 is opens, therefore read module 116 is by sensing voltage
Current potential Vo reads and stores to capacitance C (steps 302), so when output voltage current potential Vsens also with sensing voltage current potential Vo
And increase, as shown in Figure 3B.Then when first control signal S1 is low voltage potential, i.e. marked in Fig. 3 A during B, it is brilliant
Body pipe T2 and transistor T4 is closed, and transistor T1 outputs one have the second control signal S2 of operating voltage current potential, therefore brilliant
Sensing voltage current potential Vo is reset to low voltage potential by body pipe T3 to open, such as the sensing voltage current potential Vo of B between Fig. 3 A mid-terms
Shown, the sensing voltage current potential Vo under different temperatures is all reset as low voltage potential (step 304), at this time and by capacitance C institutes
The output voltage current potential Vsens of storage is exported to the 13 (step 306) of control unit described in Fig. 1, makes control unit 13 can be according to this
The Current Temperatures of substrate 10 are obtained, the output voltage current potential Vsens after the completion of output stored by capacitance C turns again to a low-voltage
Current potential, as shown in the output voltage current potential Vsens of B between Fig. 3 B mid-terms, at the end of period B, the output voltage electricity of different temperatures
The voltage potential of position Vsens all drops to corresponding low voltage potential.In addition, A and Fig. 3 B according to fig. 3, no matter in high temperature 80
DEG C or -25 DEG C of low temperature in the case of, the present invention all can export corresponding sensing voltage current potential Vo according to presently sensed temperature, because
This control unit 13 can be according to the output voltage current potential Vsens received, such as the electricity of the Vsens=13.4V marked in Fig. 3 B
Pressure value, to obtain the sensing result that Current Temperatures are 80 DEG C, therefore the present invention significantly has wider temperature detection range.
Comprehensive the above, since the temperature sensing circuit embodiment of the present invention is disposed on the substrate in display, because
This temperature sensing circuit can directly and accurately detect the Current Temperatures of substrate, and the warming module of temperature sensing circuit is by more
The diode of a concatenation is made of the transistor of multiple concatenations, therefore with higher warming sensitivity, makes the present invention's
Temperature sensing circuit embodiment is more accurately examined without additionally feeling the purpose of sensitivity using elements such as amplifiers to reach a high temperature
Current Temperatures are measured, display is reduced and happening for mistake is shown due to temperature changes.In addition, the temperature sensing electricity of the present invention
Road embodiment only needs that by a first control signal temperature sensing can be carried out, and the convenience of temperature sensing is significantly increased.
Again since the leakage current of the capacitance in low temperature is smaller, the capacitance with relatively low capacitance is in low temperature with the spirit of preferable warming
Sensitivity, and the leakage current of capacitance is larger during high temperature, the capacitance with higher capacitance value is sensitive with preferable warming at high temperature
Degree, therefore be intended to judge the mode of Current Temperatures using characteristic of the capacitance at different temperatures with different leakage currents, need to select can
The capacitance of warming sensitivity when taking into account low temperature and high temperature, this measure can then lead to the electricity of capacitance changed to sensing temperature
Capacitance is restricted, and in turn results in that the temperature that can be sensed is limited, and the temperature sensing circuit embodiment of the present invention is to utilize
The sensing voltage current potential that warming module is sensed judges the temperature of current substrate, and this case is without in order to select preferable warming spirit
Sensitivity and select specific capacitance, also would not be because of specific capacitance and with smaller temperature sensing range, therefore
This case has more wider detection temperature range.
Although the present invention has been disclosed by way of example above, it is not intended to limit the present invention., any people in the art
Member, without departing from the spirit and scope of the present invention, when can do a little change and retouching, therefore protection scope of the present invention is worked as
It is subject to claims.
Claims (11)
1. a kind of temperature sensing circuit, which is characterized in that including：
One warming module, has a first end and a second end, and the first end of the warming module is high electric to receive one
Piezoelectric position, the warming module according to the temperature sensed to provide a sensing voltage current potential to the second end, and the warming mould
Block is the transistor of multiple concatenations, and the gate terminal electric property coupling of each transistor its drain electrode end；
One read module with the warming module electric property coupling, to receive the sensing voltage current potential, and is believed according to one first control
Number decide whether to export the sensing voltage current potential, which is a transistor T4, have a first end, a second end and
One gate terminal, the first end of transistor T4 to receive the sensing voltage current potential, the gate terminal of transistor T4 to
Receive the first control signal, the second end of transistor T4 to a capacitance electric property coupling；And
One resetting module with the warming module electric property coupling, to receive a second control signal, and is believed according to second control
Number decide whether the sensing voltage current potential resetting to a low voltage potential, which is a transistor T3, has one the
One end, a second end and a gate terminal, the first end of transistor T3 and the second end electric property coupling of the warming module,
The gate terminal of transistor T3 to receive the second control signal, the second end of transistor T3 to the low-voltage
Current potential electric property coupling.
2. temperature sensing circuit as described in claim 1, which is characterized in that the temperature sensing circuit further includes：
One drive module with the resetting module electric property coupling, is believed to receive the first control signal and export second control
Number to the resetting module, which is a phase inverter, and the first control signal and the second control signal are reverse phase.
3. temperature sensing circuit as described in claim 1, which is characterized in that the capacitance has a first end and a second end,
The first end of the capacitance and the read module electric property coupling, the second end of the capacitance and the low voltage potential electric property coupling.
4. a kind of temperature sensing circuit, which is characterized in that including：
One warming module, has a first end and a second end, and the first end of the warming module is high electric to receive one
Piezoelectric position, the warming module according to the temperature sensed to provide a sensing voltage current potential to the second end, and the warming mould
Block is the diode of multiple concatenations；
One read module with the warming module electric property coupling, to receive the sensing voltage current potential, and is believed according to one first control
Number decide whether to export the sensing voltage current potential, which is a transistor T4, have a first end, a second end and
One gate terminal, the first end of transistor T4 to receive the sensing voltage current potential, the gate terminal of transistor T4 to
Receive the first control signal, the second end of transistor T4 to a capacitance electric property coupling；And
One resetting module with the warming module electric property coupling, to receive a second control signal, and is believed according to second control
Number decide whether the sensing voltage current potential resetting to a low voltage potential, which is a transistor T3, has one the
One end, a second end and a gate terminal, the first end of transistor T3 and the second end electric property coupling of the warming module,
The gate terminal of transistor T3 to receive the second control signal, the second end of transistor T3 to the low-voltage
Current potential electric property coupling.
5. temperature sensing circuit as claimed in claim 4, which is characterized in that the temperature sensing circuit further includes：
One drive module with the resetting module electric property coupling, is believed to receive the first control signal and export second control
Number to the resetting module, which is a phase inverter, and the first control signal and the second control signal are reverse phase.
6. temperature sensing circuit as claimed in claim 5, which is characterized in that the capacitance has a first end and a second end,
The first end of the capacitance and the read module electric property coupling, the second end of the capacitance and the low voltage potential electric property coupling.
7. a kind of display, which is characterized in that including：
There are one substrate multiple pixels to be arranged on；
Temperature sensing circuit as described in claim 1 or 4 is set on the substrate；And
One control unit acts to the sensing voltage current potential according to the temperature sensing circuit.
A kind of 8. operating method for temperature sensing circuit as described in claim 1 or 4, which is characterized in that the temperature sense
The operating method of slowdown monitoring circuit includes：
A sensing voltage current potential is provided to the second end of the warming module according to the temperature sensed using the warming module；
The read module is made to export the sensing voltage current potential according to a first control signal；And
Make the resetting module that the sensing voltage current potential be reset to the low voltage potential according to a second control signal.
9. the operating method of temperature sensing circuit as claimed in claim 8, which is characterized in that the temperature sensing circuit further includes
One drive module, the operating method of the temperature sensing circuit further include：
The first control signal is received using the drive module and exports the second control signal to the resetting module, first control
Signal processed is reverse phase with the second control signal.
10. the operating method of temperature sensing circuit as claimed in claim 8, which is characterized in that the behaviour of the temperature sensing circuit
It is further included as method：
The sensing voltage current potential of read module output is stored using the capacitance.
11. the operating method of temperature sensing circuit as claimed in claim 10, which is characterized in that it is further included：
Read the sensing voltage current potential for being stored in the capacitance.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103142883A TWI536337B (en) | 2014-12-09 | 2014-12-09 | Temperature sensing circuit of display device and corresponding operation method |
| TW103142883 | 2014-12-09 |
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| Publication Number | Publication Date |
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| CN104596659A CN104596659A (en) | 2015-05-06 |
| CN104596659B true CN104596659B (en) | 2018-06-22 |
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|---|---|---|---|---|
| TWI575491B (en) * | 2016-02-01 | 2017-03-21 | 友達光電股份有限公司 | Display device and providing method for supply voltage of gate driving circuit |
| CN106023890B (en) * | 2016-07-25 | 2018-06-01 | 京东方科技集团股份有限公司 | Temperature sensing circuit and method, temperature compensation means and method and display device |
| CN106356031B (en) * | 2016-10-10 | 2019-04-05 | 南京中电熊猫液晶显示科技有限公司 | The control method of liquid crystal display device and its GOA circuit |
| CN106840432A (en) | 2017-02-16 | 2017-06-13 | 京东方科技集团股份有限公司 | Temperature sensor, array base palte, display and voltage control method |
| CN107063487B (en) | 2017-06-13 | 2019-09-20 | 京东方科技集团股份有限公司 | Temperature sensor, display panel and display device |
| CN107180612B (en) * | 2017-07-24 | 2019-02-05 | 京东方科技集团股份有限公司 | A kind of pixel circuit and display panel |
| CN107393467A (en) * | 2017-08-22 | 2017-11-24 | 京东方科技集团股份有限公司 | Show backboard, display device, display device method for excessive heating protection and the method for controlling display device display picture brightness |
| CN108831398B (en) * | 2018-07-25 | 2020-05-05 | 深圳市华星光电半导体显示技术有限公司 | GOA circuit and display device |
| CN109036291B (en) * | 2018-09-18 | 2020-11-10 | 京东方科技集团股份有限公司 | Display panel, control method thereof and display device |
| CN109883562B (en) * | 2019-03-07 | 2021-03-09 | 昆山龙腾光电股份有限公司 | Display device, temperature sensor and temperature sensing method |
| US11170685B2 (en) * | 2020-04-01 | 2021-11-09 | Novatek Microelectronics Corp. | Display device and driving device thereof |
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| CN1490781A (en) * | 2002-10-15 | 2004-04-21 | 友达光电股份有限公司 | Driving circuit of luminescent assemblage and method thereof |
| TWI467134B (en) * | 2011-08-22 | 2015-01-01 | Ind Tech Res Inst | Sensing device and sensing method |
| US8979362B2 (en) * | 2012-02-15 | 2015-03-17 | Infineon Technologies Ag | Circuit and method for sensing a physical quantity, an oscillator circuit, a smartcard, and a temperature-sensing circuit |
| CN103576999B (en) * | 2012-07-23 | 2016-08-03 | 瀚宇彩晶股份有限公司 | The sensing device of capacitance type touch-control panel |
| CN103927957B (en) * | 2013-12-25 | 2017-05-17 | 上海中航光电子有限公司 | Driving method and device of display device and display facility |
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- 2014-12-09 TW TW103142883A patent/TWI536337B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN104596659A (en) | 2015-05-06 |
| TW201621855A (en) | 2016-06-16 |
| TWI536337B (en) | 2016-06-01 |
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