CN102982778A - Driving voltage compensation system for GOA circuit - Google Patents
Driving voltage compensation system for GOA circuit Download PDFInfo
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- CN102982778A CN102982778A CN 201210529540 CN201210529540A CN102982778A CN 102982778 A CN102982778 A CN 102982778A CN 201210529540 CN201210529540 CN 201210529540 CN 201210529540 A CN201210529540 A CN 201210529540A CN 102982778 A CN102982778 A CN 102982778A
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Abstract
The invention provides a driving voltage compensation system for a GOA (Gate driver On Array) circuit. The GOA circuit is positioned in an array substrate. The system comprises a temperature sensor and a driving circuit, wherein the temperature sensor is arranged below the GOA circuit and used for detecting real-time temperature of the array substrate and converting the real-time temperature to a voltage signal, and the driving circuit is used for receiving the voltage signal, comparing the voltage signal with reference voltage, outputting a control signal according to a compared result, and adjusting driving voltage of the GOA circuit by virtue of the control signal. Compared with the prior art, according to the driving voltage compensation system, the temperature sensor is placed in glass, so that the driving voltage compensation system is not affected by an external environment easily, can detect actual temperature actually reflecting a thin film transistor in the GOA circuit, and provides precise driving voltage compensation.
Description
Technical field
The present invention relates to Thin Film Transistor-LCD (TFT-LCD, Thin Film Transistor Liquid Crystal Display) GOA(Gate driver On Array, the capable driving of array base palte) circuit relates in particular to a kind of driving voltage bucking-out system for this GOA circuit.
Background technology
Current, in TFT-LCD, each pixel has a thin film transistor (TFT) (TFT, Thin Film Transistor), the grid of this thin film transistor (TFT) is electrically connected to the sweep trace of horizontal direction, and drain electrode is electrically connected to the data line of vertical direction, and source electrode is electrically connected to a pixel electrode.If a certain sweep trace in the horizontal direction applies enough positive voltages, meeting so that all TFT on this sweep trace open, pixel electrode corresponding to this sweep trace this moment can be connected with the data line of vertical direction, and with the video signal voltage writing pixel of data line, thereby control the penetrability of different liquid crystal and then reach the effect of control color.
In the prior art, this driving circuit mainly is by the outer gluing IC(Integrated Circuit of liquid crystal panel, integrated circuit) finish.By contrast, GOA technology (Gate driver On Array, array base palte is capable to be driven) is that direct gate driver circuit with thin film transistor (TFT) is produced on the array base palte, to replace a kind of technology by the driving chip of external silicon making.Because the GOA circuit can directly be made in around the panel, simplify making technology, but also can reduce cost of products, improve the integrated level of TFT-LCD panel, make panel trend towards more slimming.
Yet, in the actual mechanical process of GOA circuit, often can run into cryogenic conditions, electron mobility diminishes at low temperatures, and the electric current of the thin film transistor (TFT) of flowing through is lower, causes the charging ability of this thin film transistor (TFT) to descend.In order to address this problem, a kind of settling mode of prior art is to be, system's external thermistor equitemperature sensor, utilize temperature sensor to come the testing environment temperature, and cross in environment temperature and automatically the driving voltage of GOA circuit to be raised when low, promote the charging ability of thin film transistor (TFT), but, this scheme needs an external temperature sensing component, has both increased cost, has taken again volume.In addition, temperature sensing component is exposed to outside the panel, subjects to be affected by the external environment, and causes transducer sensitivity to reduce.Moreover what temperature sensing component detected is environment temperature, can not accurately reflect the actual temperature of the TFT of the GOA circuit in the glass substrate.
In view of this, how to design a kind of temperature detection scheme for the GOA circuit, by detecting exactly the actual temperature of thin film transistor (TFT), the driving voltage compensation is provided, and then the charging ability that guarantees thin film transistor (TFT) can be because temperature variation reduce, and is a problem needing to be resolved hurrily of person skilled in the industry.
Summary of the invention
For the existing defects of temperature detection scheme for the GOA circuit of the prior art, the invention provides driving voltage bucking-out system a kind of novelty, that be used for the GOA circuit.
According to one aspect of the present invention, a kind of driving voltage bucking-out system for the GOA circuit is provided, this GOA circuit is positioned at array basal plate, and wherein, this driving voltage bucking-out system comprises:
One temperature sensor is arranged at the below of described GOA circuit, in order to detecting the real time temperature of described array base palte, and described real time temperature is converted into a voltage signal; And
One drive circuit in order to receiving described voltage signal, and compares described voltage signal and a reference voltage, exports a control signal according to comparative result, adjusts the driving voltage of described GOA circuit by described control signal.
Preferably, this temperature sensor comprises: a first film transistor, and the transistorized grid of described the first film is electrically connected to the current driving voltage of described GOA circuit, and the transistorized drain electrode of described the first film is electrically connected to a supply voltage; And a resistance, the first end of described resistance is electrically connected to the transistorized source electrode of described the first film, and the second end of described resistance is electrically connected to earth terminal, and wherein said voltage signal is corresponding to the voltage at described resistance two ends.
Preferably, this driving circuit comprises: a comparer, and its first input end is electrically connected to the first end of described resistance, and its second input end is electrically connected to described reference voltage, and its output terminal is in order to export described control signal; One second thin film transistor (TFT), the grid of described the second thin film transistor (TFT) is connected to the output terminal of described comparer, and the source electrode of described the second thin film transistor (TFT) is electrically connected to a first threshold voltage; And one the 3rd thin film transistor (TFT), the grid of described the 3rd thin film transistor (TFT) is connected to the output terminal of described comparer, the source electrode of described the 3rd thin film transistor (TFT) is electrically connected to a Second Threshold voltage, described Second Threshold voltage is less than described first threshold voltage, wherein, by this control signal the target drives voltage of this GOA circuit is adjusted into this first threshold voltage or this Second Threshold voltage.
Among the embodiment therein, when described voltage signal during greater than described reference voltage, the target drives voltage of described GOA circuit is adjusted into described Second Threshold voltage.
Among the embodiment therein, when described voltage signal during less than described reference voltage, the target drives voltage of described GOA circuit is adjusted into described first threshold voltage.
Preferably, resistance is electrically connected to the transistorized source electrode of described the first film via the tin indium oxide metal wire.More preferably, the resistance of resistance is 10k Ω, and the length breadth ratio of described tin indium oxide metal wire is 100.In addition, the live width of this tin indium oxide metal wire is 3um, and length is 300um, and adopts the waveform mode to carry out cabling.
Adopt driving voltage bucking-out system of the present invention, temperature sensor is arranged at the below of GOA circuit, real time temperature in order to the detection arrays substrate, and this real time temperature is converted into a voltage signal, then utilize driving circuit to receive this voltage signal, comparative result based on this voltage signal and a reference voltage is exported a control signal, and adjusts the driving voltage of GOA circuit by this control signal.Than prior art, driving voltage bucking-out system of the present invention is placed on inside glass with temperature sensor, thereby be difficult for being affected by the external environment, also can detect the actual temperature that can truly reflect the thin film transistor (TFT) in the GOA circuit, and then accurate driving voltage compensation is provided.In addition, under the condition of inside glass space permission, the larger length breadth ratio of thin film transistor (TFT) can be set, make its electric current increase of flowing through, thereby improve the resolution of temperature sensor.
Description of drawings
The reader will become apparent various aspects of the present invention after the reference accompanying drawing has been read the specific embodiment of the present invention.Wherein,
Fig. 1 illustrates according to one embodiment of the present invention, is used for the structural representation of the driving voltage bucking-out system of GOA circuit;
Fig. 2 illustrates the graph of relation of the actual temperature of first threshold voltage in the driving voltage bucking-out system of Fig. 1 and Second Threshold voltage and thin film transistor (TFT); And
Fig. 3 illustrates the principle of work synoptic diagram of the comparer in the driving voltage bucking-out system of Fig. 1.
Embodiment
For technology contents that the application is disclosed is more detailed and complete, can be with reference to accompanying drawing and following various specific embodiments of the present invention, identical mark represents same or analogous assembly in the accompanying drawing.Yet those of ordinary skill in the art should be appreciated that the embodiment that hereinafter provides limits the scope that the present invention is contained.In addition, accompanying drawing only is used for schematically being illustrated, and does not draw according to its life size.
With reference to the accompanying drawings, the embodiment of various aspects of the present invention is described in further detail.
Fig. 1 illustrates according to one embodiment of the present invention, is used for the structural representation of the driving voltage bucking-out system of GOA circuit.Fig. 2 illustrates the graph of relation of the actual temperature of first threshold voltage in the driving voltage bucking-out system of Fig. 1 and Second Threshold voltage and thin film transistor (TFT).Fig. 3 illustrates the principle of work synoptic diagram in the driving voltage bucking-out system of Fig. 1.
As previously mentioned, the GOA circuit is positioned at the array base palte (glass substrate) of TFT-LCD, thereby has simplified making technology, reduces cost of products, improves the integrated level of TFT-LCD panel, thereby makes panel trend towards more slimming.With reference to Fig. 1, driving voltage bucking-out system of the present invention comprises a temperature sensor 10 and one drive circuit 20.Wherein, temperature sensor 10 is positioned at array base palte, and driving circuit 20 is positioned at the gate drivers IC interior.On the implementation, when the leading portion array base palte was made, temperature sensor 10 can generate together, so it need not to increase extra processing procedure.
Particularly, this temperature sensor 10 is arranged at the below of GOA circuit, in order to the actual temperature of detection arrays substrate, and this actual temperature is converted into a voltage signal.Than prior art, because it is inner that this temperature sensor 10 is placed on such as the array base palte of glass material, be difficult for being affected by the external environment, thereby, can detect by this temperature sensor 10 and can truly reflect the actual temperature of the thin film transistor (TFT) in the GOA circuit, in order to accurate driving voltage compensation is provided.Driving circuit 20 is in order to receiving the voltage signal from temperature sensor 10, and this voltage signal and a reference voltage are compared, and exports a control signal according to comparative result, then utilizes this control signal to adjust the driving voltage of GOA circuit.
In one embodiment, this temperature sensor 10 comprises a first film transistor T 1 and a resistance R.The grid of the first film transistor T 1 is electrically connected to the current driving voltage VGH of GOA circuit, and the drain electrode of the first film transistor T 1 is electrically connected to a supply voltage VDD.The first end of resistance R is electrically connected to the source electrode of the first film transistor T 1, and the second end of resistance R is electrically connected to earth terminal.Should be appreciated that when temperature variation the electric current of the first film transistor T 1 of flowing through also can be not quite similar.Therefore, can reflect the variation of this electric current by detecting voltage Vsensor that the resistance R two ends load, that is the voltage Vsensor that the resistance R two ends load can accurately reflect the actual temperature that the first film transistor T 1 detects.
In another embodiment, under the condition of layout on the glass substrate (layout) space permission, the length breadth ratio of the first film transistor T 1 (L/W) is larger more than 10 times than normal GOA inside circuit, guarantees that its On current Ion becomes large, so that the resolution of temperature sensor 10 becomes large.
Further, driving circuit 20 comprises a comparator C OM1, one second thin film transistor (TFT) T2 and one the 3rd thin film transistor (TFT) T3.For example, the input end IN2 of comparator C OM1 is electrically connected to the first end of resistance R, and another input end IN1 is electrically connected to reference voltage Vref, and its output terminal is in order to export this control signal.In other embodiments, the input end IN1 of comparator C OM1 is electrically connected to the first end of resistance R, and another input end IN2 is electrically connected to reference voltage Vref, and its output terminal is in order to export this control signal.
The grid of the second thin film transistor (TFT) T2 is connected to the output terminal of comparator C OM1, and the source electrode of the second thin film transistor (TFT) T2 is electrically connected to a first threshold voltage VGH-H.The grid of the 3rd thin film transistor (TFT) T3 is connected to the output terminal of comparator C OM1, the source electrode of the 3rd thin film transistor (TFT) T3 is electrically connected to a Second Threshold voltage VGH-L, the drain electrode of the 3rd thin film transistor (TFT) T3 is connected with the drain electrode of the second thin film transistor (TFT) T2, and exports the target drives voltage Vadj of this GOA.Wherein, Second Threshold voltage VGH-L is less than first threshold voltage VGH-H.At this, the second thin film transistor (TFT) T2 and the 3rd thin film transistor (TFT) T3 are complementary type.For example, when control signal was a level, the target drives voltage of GOA circuit was this first threshold voltage VGH-H; When control signal was another level, the target drives voltage of GOA circuit was this Second Threshold voltage VGH-L.
In one embodiment, as voltage signal Vsensor during greater than reference voltage Vref, the target drives voltage Vadj of GOA circuit is adjusted into Second Threshold voltage VGH-L.As voltage signal Vsensor during less than reference voltage Vref, the target drives voltage Vadj of GOA circuit is adjusted into first threshold voltage VGH-H, as shown in Figure 3.
In one embodiment, resistance R is electrically connected to the source electrode of the first film transistor T 1 via tin indium oxide (ITO) metal wire.Preferably, the resistance of resistance R is 10k Ω, and the length breadth ratio of tin indium oxide metal wire (L/W) is 100.For example, the live width of tin indium oxide metal wire is 3um, and length is 300um, and adopts waveform (or being called snakelike) mode to carry out cabling, to reduce cabling space or layout (layout) area.
With reference to Fig. 2, at first should be understood that, when the present invention is intended to solve GOA circuit actual mechanical process and runs into cryogenic conditions, cause the electric current of the thin film transistor (TFT) T1 that flows through lower, cause the problem of the charging ability decline of this thin film transistor (TFT) T1, condition when therefore, this driving voltage bucking-out system only need work in thin film transistor (TFT) T1 and is in normal temperature or low temperature.After all, when thin film transistor (TFT) T1 temperature was higher, its target drives voltage enough made its charging.In the relation curve of Fig. 2, temperature T
GONCritical temperature point corresponding to driving voltage VGH-H and driving voltage VGH-L.That is to say, when the actual temperature of thin film transistor (TFT) T1 is higher than temperature T
GONThe time, can adopt driving voltage VGH-L as the target drives voltage of thin film transistor (TFT) T1; When the actual temperature of thin film transistor (TFT) T1 is lower than temperature T
GONThe time, unaffected for guaranteeing its charging ability, adopt to be higher than the driving voltage VGH-H of VGH-L as the target drives voltage of thin film transistor (TFT) T1.Be not difficult to find out, when thin film transistor (TFT) T1 is in critical temperature T
GONThe time, can record the voltage Vsensor at resistance R two ends, and with this voltage Vsensor this reference voltage Vref of receiving of device COM1 as a comparison, with the switching judging condition as target drives voltage.
Adopt driving voltage bucking-out system of the present invention, temperature sensor is arranged at the below of GOA circuit, real time temperature in order to the detection arrays substrate, and this real time temperature is converted into a voltage signal, then utilize driving circuit to receive this voltage signal, comparative result based on this voltage signal and a reference voltage is exported a control signal, and adjusts the driving voltage of GOA circuit by this control signal.Than prior art, driving voltage bucking-out system of the present invention is placed on inside glass with temperature sensor, thereby be difficult for being affected by the external environment, also can detect the actual temperature that can truly reflect the thin film transistor (TFT) in the GOA circuit, and then accurate driving voltage compensation is provided.In addition, under the condition of inside glass space permission, the larger length breadth ratio of thin film transistor (TFT) can be set, make its electric current increase of flowing through, thereby improve the resolution of temperature sensor.
The advantage of aforementioned manner is need not the ambient temperature sensor, directly in layout on glass, the function of integrated circuit does not need too complicated, and the temperature sense assembly is positioned over inside glass, be not subject to the impacts such as extraneous moisture, and the temperature of sensing can react the actual temperature of thin film transistor (TFT) among the GOA really, thereby does correct compensation.
Above, describe the specific embodiment of the present invention with reference to the accompanying drawings.But those skilled in the art can understand, and in situation without departing from the spirit and scope of the present invention, can also do various changes and replacement to the specific embodiment of the present invention.These changes and replacement all drop in claims limited range of the present invention.
Claims (8)
1. one kind is used for GOA(Gate driver On Array, and array base palte is capable to be driven) the driving voltage bucking-out system of circuit, described GOA circuit is positioned at array basal plate, it is characterized in that, and described driving voltage bucking-out system comprises:
One temperature sensor is arranged at the below of described GOA circuit, in order to detecting the real time temperature of described array base palte, and described real time temperature is converted into a voltage signal; And
One drive circuit in order to receiving described voltage signal, and compares described voltage signal and a reference voltage, exports a control signal according to comparative result, adjusts the driving voltage of described GOA circuit by described control signal.
2. driving voltage bucking-out system according to claim 1 is characterized in that, described temperature sensor comprises:
One the first film transistor, the transistorized grid of described the first film is electrically connected to the current driving voltage of described GOA circuit, and the transistorized drain electrode of described the first film is electrically connected to a supply voltage; And
One resistance, the first end of described resistance are electrically connected to the transistorized source electrode of described the first film, and the second end of described resistance is electrically connected to earth terminal, and wherein said voltage signal is corresponding to the voltage at described resistance two ends.
3. driving voltage bucking-out system according to claim 2 is characterized in that, described driving circuit comprises:
One comparer, its first input end is electrically connected to the first end of described resistance, and its second input end is electrically connected to described reference voltage, and its output terminal is in order to export described control signal;
One second thin film transistor (TFT), the grid of described the second thin film transistor (TFT) is connected to the output terminal of described comparer, and the source electrode of described the second thin film transistor (TFT) is electrically connected to a first threshold voltage; And
One the 3rd thin film transistor (TFT), the grid of described the 3rd thin film transistor (TFT) is connected to the output terminal of described comparer, and the source electrode of described the 3rd thin film transistor (TFT) is electrically connected to a Second Threshold voltage, and described Second Threshold voltage is less than described first threshold voltage,
Wherein, by described control signal the target drives voltage of described GOA circuit is adjusted into described first threshold voltage or described Second Threshold voltage.
4. driving voltage bucking-out system according to claim 3 is characterized in that, when described voltage signal during greater than described reference voltage, the target drives voltage of described GOA circuit is adjusted into described Second Threshold voltage.
5. driving voltage bucking-out system according to claim 3 is characterized in that, when described voltage signal during less than described reference voltage, the target drives voltage of described GOA circuit is adjusted into described first threshold voltage.
6. driving voltage bucking-out system according to claim 2 is characterized in that, described resistance is electrically connected to the transistorized source electrode of described the first film via the tin indium oxide metal wire.
7. driving voltage bucking-out system according to claim 6 is characterized in that, the resistance of described resistance is 10k Ω, and the length breadth ratio of described tin indium oxide metal wire is 100.
8. driving voltage bucking-out system according to claim 7 is characterized in that, the live width of described tin indium oxide metal wire is 3um, and length is 300um, and adopts the waveform mode to carry out cabling.
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Application publication date: 20130320 |