CN104583712B - 用于原位测量的光学计量 - Google Patents

用于原位测量的光学计量 Download PDF

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Publication number
CN104583712B
CN104583712B CN201380043900.8A CN201380043900A CN104583712B CN 104583712 B CN104583712 B CN 104583712B CN 201380043900 A CN201380043900 A CN 201380043900A CN 104583712 B CN104583712 B CN 104583712B
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China
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processing
data
parameters
parameter
sequence
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Chinese (zh)
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CN104583712A (zh
Inventor
尹戈尔·蒂罗韦斯
科尔内尔·博兹多格
达里奥·埃利亚斯
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Novell Ltd
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Nova Measuring Instruments Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G01N21/8903—Optical details; Scanning details using a multiple detector array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
CN201380043900.8A 2012-08-15 2013-08-15 用于原位测量的光学计量 Active CN104583712B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261683215P 2012-08-15 2012-08-15
US61/683,215 2012-08-15
PCT/IL2013/050697 WO2014027354A1 (en) 2012-08-15 2013-08-15 Optical metrology for in-situ measurements

Publications (2)

Publication Number Publication Date
CN104583712A CN104583712A (zh) 2015-04-29
CN104583712B true CN104583712B (zh) 2017-12-01

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CN201380043900.8A Active CN104583712B (zh) 2012-08-15 2013-08-15 用于原位测量的光学计量

Country Status (7)

Country Link
US (3) US9528946B2 (cg-RX-API-DMAC10.html)
EP (1) EP2890951A4 (cg-RX-API-DMAC10.html)
JP (1) JP6336982B2 (cg-RX-API-DMAC10.html)
KR (1) KR102205682B1 (cg-RX-API-DMAC10.html)
CN (1) CN104583712B (cg-RX-API-DMAC10.html)
TW (3) TWI635269B (cg-RX-API-DMAC10.html)
WO (1) WO2014027354A1 (cg-RX-API-DMAC10.html)

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TWI823344B (zh) * 2015-12-15 2023-11-21 以色列商諾威股份有限公司 用於測量圖案化結構之特性的系統
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US11107738B2 (en) * 2016-11-16 2021-08-31 Nova Ltd. Layer detection for high aspect ratio etch control
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
CN112005347B (zh) 2018-04-10 2025-04-04 朗姆研究公司 抗蚀剂和蚀刻建模
CN111971551B (zh) 2018-04-10 2025-02-28 朗姆研究公司 机器学习中的光学计量以表征特征
JP7020392B2 (ja) * 2018-12-25 2022-02-16 東芝三菱電機産業システム株式会社 データ収集再生システム
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
JP7220573B2 (ja) * 2019-01-24 2023-02-10 株式会社荏原製作所 情報処理システム、情報処理方法、プログラム及び基板処理装置
KR102838452B1 (ko) * 2019-02-14 2025-07-24 램 리써치 코포레이션 기판 제작 시스템들을 위해 데이터 분석 및 머신 러닝을 지원하기 위한 데이터 캡처 및 변환
WO2021140508A1 (en) * 2020-01-06 2021-07-15 Nova Measuring Instruments Ltd. Self-supervised representation learning for interpretation of ocd data
CN114930154B (zh) * 2020-01-07 2023-08-01 诺威有限公司 检测ocd计量机器学习的离群值和异常
US11698628B2 (en) 2020-03-16 2023-07-11 Vitro Flat Glass Llc System, method, and computer program product for optimizing a manufacturing process
US11830779B2 (en) * 2020-08-12 2023-11-28 Applied Materials, Inc. In-situ etch material selectivity detection system
KR102757747B1 (ko) 2021-03-05 2025-01-21 어플라이드 머티어리얼스, 인코포레이티드 기판 연마 동안 비용 함수 또는 예상되는 장래 파라미터 변경들을 사용한 처리 파라미터들의 제어
US11619594B2 (en) 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
DE102022129114A1 (de) * 2021-11-05 2023-05-25 Jasco Corporation Spektrometer
JP7870627B2 (ja) * 2022-02-03 2026-06-05 東京エレクトロン株式会社 データ算出方法及び基板処理装置
TWI924300B (zh) * 2023-12-22 2026-05-01 美商梅瑞堤儀器公司 用於控制光學儀器之解析度及產量之機制及其使用方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1056162A (zh) * 1990-05-01 1991-11-13 美国电话电报公司 原位监测法和化学/机械平面化端点检测设备
CN1377457A (zh) * 1999-09-30 2002-10-30 拉姆研究公司 使用脉动宽带光源原位监测等离子体刻蚀和淀积工艺的方法和装置
CN1487577A (zh) * 2002-08-29 2004-04-07 ��ʽ����Һ���ȶ˼����������� 结晶化状态的原位置监测方法
US6764379B2 (en) * 1999-12-06 2004-07-20 Nova Measuring Instruments Ltd. Method and system for endpoint detection
CN1619769A (zh) * 2003-11-19 2005-05-25 国际商业机器公司 在电子衬底中确定对准误差的靶系统和方法

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ES2156143T3 (es) 1993-12-30 2001-06-16 Guerbet Sa Ligandos poliaminados, complejos metalicos, procedimiento de preparacion, aplicaciones diagnosticas y terapeuticas.
US8531678B2 (en) * 1999-07-09 2013-09-10 Nova Measuring Instruments, Ltd. Method and system for measuring patterned structures
US7526354B2 (en) 2006-07-10 2009-04-28 Tokyo Electron Limited Managing and using metrology data for process and equipment control
US9103792B2 (en) 2008-03-31 2015-08-11 Bt Imaging Pty Ltd. Wafer imaging and processing method and apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1056162A (zh) * 1990-05-01 1991-11-13 美国电话电报公司 原位监测法和化学/机械平面化端点检测设备
CN1377457A (zh) * 1999-09-30 2002-10-30 拉姆研究公司 使用脉动宽带光源原位监测等离子体刻蚀和淀积工艺的方法和装置
US6764379B2 (en) * 1999-12-06 2004-07-20 Nova Measuring Instruments Ltd. Method and system for endpoint detection
CN1487577A (zh) * 2002-08-29 2004-04-07 ��ʽ����Һ���ȶ˼����������� 结晶化状态的原位置监测方法
CN1619769A (zh) * 2003-11-19 2005-05-25 国际商业机器公司 在电子衬底中确定对准误差的靶系统和方法

Also Published As

Publication number Publication date
US20180195975A1 (en) 2018-07-12
JP2015528569A (ja) 2015-09-28
JP6336982B2 (ja) 2018-06-06
EP2890951A1 (en) 2015-07-08
US20150226680A1 (en) 2015-08-13
TWI600895B (zh) 2017-10-01
TW201415003A (zh) 2014-04-16
KR20150043478A (ko) 2015-04-22
US20170167987A1 (en) 2017-06-15
TW201831885A (zh) 2018-09-01
KR102205682B1 (ko) 2021-01-21
CN104583712A (zh) 2015-04-29
US9528946B2 (en) 2016-12-27
EP2890951A4 (en) 2016-05-18
TW201734434A (zh) 2017-10-01
US10197506B2 (en) 2019-02-05
WO2014027354A1 (en) 2014-02-20
TWI635269B (zh) 2018-09-11
US9915624B2 (en) 2018-03-13

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