CN104576923A - Methods for defining Z-direction magnetoresistance induction film pattern of 3D AMR (three-dimensional anisotropic magnetoresistance) sensor - Google Patents
Methods for defining Z-direction magnetoresistance induction film pattern of 3D AMR (three-dimensional anisotropic magnetoresistance) sensor Download PDFInfo
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- CN104576923A CN104576923A CN201410842342.8A CN201410842342A CN104576923A CN 104576923 A CN104576923 A CN 104576923A CN 201410842342 A CN201410842342 A CN 201410842342A CN 104576923 A CN104576923 A CN 104576923A
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Abstract
The invention discloses two methods for defining a Z-direction magnetoresistance induction film pattern of a 3D AMR (three-dimensional anisotropic magnetoresistance) sensor. One method comprises the following steps: growing a first dielectric film and a second dielectric film on a silicon substrate; forming a groove of the second dielectric film by photolithographic etching; etching the first dielectric film with a wet process or an isotropic gas etching method; forming a transverse groove below the groove; finally, growing a third dielectric film and sputtering the magnetoresistance induction film. The other method comprises the following steps: growing the first dielectric film on a silicon substrate to serve as an etching stop layer; growing a layer of fourth dielectric film; forming the transverse groove in the fourth dielectric film. According to the methods, the transverse groove is formed according to a characteristic that different dielectric films or dielectric films with different doping concentrations have a selection ratio for isotropic etching, and the Z-direction magnetoresistance film is formed according to a metal sputtering film-forming principle, so that the pattern defining effect is improved, a process is simplified, and the cost is reduced.
Description
Technical field
The present invention relates to IC manufacturing field, particularly relate to the define method of 3D AMR transducer Z-direction magneto-resistor sensor film figure.
Background technology
3D AMR (Anisotropic Magnetoresistance, be called for short AMR) be based on anisotropic-magnetoresistance effect, namely when the electric current of vertical magnetic field in ferromagnetic material applied, resistance produces significantly change, by adopting standard semiconductor techniques, on silicon chip or other substrate, prepare ferromagnetic thin film rectangular, and the magneto-dependent sensor with X, Y, Z 3D induction being aided with the integrated of peripheral circuit and controls IC and being formed.
Because anisotropic magnetoresistance transducer has the advantages such as low in energy consumption, integrated level is high, highly sensitive, noise is little, reliability is high and adverse environment resistant ability is strong, make its proportion shared in magneto-dependent sensor more and more higher, application also progressively expands.
Because of the ability of the 3D magnetic resistance induction that anisotropic magnetoresistance transducer has, therefore need the figure Shape definition of the magneto-resistor sensor film carrying out X, Y, Z tri-directions, wherein, the figure Shape definition of Z-direction magneto-resistor sensor film is usually by means of deep trench, by the method for chemical wet etching, figure Shape definition is carried out to channel bottom and bank, top, to form Z-direction magneto-resistor sensor film, as shown in Figure 1, 2.It is mainly in the meaning that channel bottom carries out magneto-resistor sensor film figure Shape definition the component reducing in-plane (X, Y) magnetic induction.The pattern definition method of this kind to channel bottom magneto-resistor sensor film exists that photoresist crawling is even, litho pattern is difficult to resolve, trench fill process is complicated, etch amount is comparatively large and etch topography is difficult to the defects such as control.
Summary of the invention
The technical problem to be solved in the present invention is to provide the pattern definition method of two kinds of 3D AMR transducer Z-direction magneto-resistor sensor films, and its technique is simple, and effective, cost is low.
For solving the problems of the technologies described above, the pattern definition method of the first 3D AMR transducer Z-direction magneto-resistor sensor film of the present invention, step comprises:
1) growth first medium film on a silicon substrate;
2) growth second medium film; The etch rate of described second medium film in wet etching or isotropic gas etching is less than first medium film;
3) with first medium film for etching barrier layer, formed the groove of second medium film by photoetching and etching;
4) by wet etching or isotropic gas etching method, first medium film is etched, form transverse concave groove in described beneath trenches;
5) growth the 3rd deielectric-coating;
6) magneto-resistor sensor film is sputtered.
Described first medium film and the 3rd deielectric-coating are Si
3n
4.
Described second medium film adopts chemical gaseous phase depositing process to grow up, and is generally silica.
Described step 4), the thickness of the first medium film etched away obviously will be greater than 2 times of the 3rd deielectric-coating thickness and the thickness sum of magneto-resistor sensor film, preferably large 0.5 ~ 3 μm.
By crossing, Ta crosses layer to described magneto-resistor sensor film, NiFe magneto-resistive layer, protective layer form, and is generally NiFe/TaN composite membrane.
The pattern definition method of the second 3D AMR transducer Z-direction magneto-resistor sensor film of the present invention, step comprises:
1) growth first medium film on a silicon substrate;
2) growth the 4th deielectric-coating;
3) growth second medium film; The etch rate of described second medium film in wet etching or isotropic gas etching is less than the 4th deielectric-coating;
4) with first medium film for etching barrier layer, formed the groove of second medium film by photoetching and etching;
5) by wet etching or isotropic gas etching method, the 4th deielectric-coating is etched, form transverse concave groove in described beneath trenches;
6) growth the 3rd deielectric-coating;
7) magneto-resistor sensor film is sputtered.
Described first medium film and the 3rd deielectric-coating are Si
3n
4.
Described second medium film adopts chemical gaseous phase depositing process to grow up, and is generally silica.
Described 4th deielectric-coating is that doping content is lower than the polyimides after the silica of second medium film or solidification.
By crossing, Ta crosses layer to described magneto-resistor sensor film, NiFe magneto-resistive layer, protective layer form, and is generally NiFe/TaN composite membrane.
Described step 4), the thickness of the 4th deielectric-coating etched away is greater than 2 times of the 3rd deielectric-coating thickness and the thickness sum of magneto-resistor sensor film, preferably large 0.5 ~ 3 μm.
The present invention utilizes feature isotropic etching between different film quality or different levels of doping film quality to Selection radio, form transverse concave groove, utilize the principle of metal sputtering film forming simultaneously, make it form sputtering at transverse concave groove place or inverted trapezoidal place blank, define the figure of required Z-direction magneto-resistor sensor film with this.Compared with the Z-direction magneto-resistor sensor film pattern definition method of routine, define method of the present invention has the following advantages and beneficial effect:
1. figure Shape definition is effective, and channel bottom does not have the component of in-plane completely.
2. technique is simple, as long as the deielectric-coating film quality selected is suitable, just only needs to increase a transverse concave groove etch step on existing Process ba-sis, does not need loaded down with trivial details chemical wet etching step.
3. cost is low, does not need to remove filling groove with expensive material.
Accompanying drawing explanation
Fig. 1 ~ Fig. 2 is the pattern definition method schematic diagram of conventional 3D AMR transducer Z-direction magneto-resistor sensor film.
Fig. 3 ~ Fig. 8 is the pattern definition method flow chart of the 3D AMR transducer Z-direction magneto-resistor sensor film of the embodiment of the present invention 1.
The pattern definition method flow chart of the 3D AMR transducer Z-direction magneto-resistor sensor film of Fig. 9 ~ Figure 15 embodiment of the present invention 2.
In figure, description of reference numerals is as follows:
1: silicon substrate
2: first medium film
3: second medium film
4: the three deielectric-coating
5: magneto-resistor sensor film
6: the four deielectric-coating
Embodiment
Understand more specifically for having technology contents of the present invention, feature and effect, now by reference to the accompanying drawings, details are as follows:
Embodiment 1
Step 1, cleaning silicon chip, first medium film 2 that silicon substrate 1 is grown up, as shown in Figure 3.In the present embodiment, first medium film 2 is Si
3n
4film.
Step 2, with chemical gaseous phase depositing process growth second medium film 3, as shown in Figure 4.Described second medium film 3 is silicon oxide film.
Step 3, forms the groove of second medium film 3, as shown in Figure 5 by photoetching and etching.First medium film 2 is used as etching barrier layer in this step etching.
Step 4, not exclusively etches first medium film 2 by isotropic etching method, and the beneath trenches described in step 3 forms transverse concave groove, as shown in Figure 6.In this step etching, the thickness of the first medium film 2 etched away 2 times of needing obviously to be greater than the 3rd deielectric-coating 4 thickness add the thickness of magneto-resistor sensor film and.
Step 5, the 3rd deielectric-coating 4 of growing up, as shown in Figure 7.In the present embodiment, the 3rd deielectric-coating 4 is silicon nitride film.
Step 6, sputtering magneto-resistor sensor film 5, as shown in Figure 8.The magneto-resistor sensor film 5 of the present embodiment is NiFe/TaN composite membrane.
Embodiment 2
Step 1, cleaning silicon chip, first medium film 2 that silicon substrate 1 is grown up, as shown in Figure 9.In the present embodiment, first medium film 2 is Si
3n
4film.
Step 2, the 4th deielectric-coating 6 of growing up, as shown in Figure 10.Described 4th deielectric-coating 6 is that doping content is lower than the polyimides after the silica of second medium film or solidification.
Step 3, with chemical gaseous phase depositing process growth second medium film 3, as shown in figure 11.Described second medium film 3 is silicon oxide film.
Step 4, forms the groove of second medium film 3, as shown in figure 12 by photoetching and etching.
Step 5, not exclusively etches the 4th deielectric-coating 6 by isotropic etching method, and the beneath trenches described in step 4 forms transverse concave groove, as shown in figure 13.In this step etching, the thickness of the 4th deielectric-coating 6 etched away 2 times of needing obviously to be greater than the 3rd deielectric-coating 4 thickness add the thickness of magneto-resistor sensor film 5 and.
Step 6, the 3rd deielectric-coating 4 of growing up, as shown in figure 14.3rd deielectric-coating 4 of the present embodiment is silicon nitride film.The thickness of the 3rd deielectric-coating can not be too thick, is generally 0.2 ~ 1 μm.
Step 7, sputtering magneto-resistor sensor film 5, as shown in figure 15.The magneto-resistor sensor film 5 of the present embodiment is NiFe/TaN composite membrane.
Claims (10)
1.3D AMR transducer Z-direction magneto-resistor sensor film pattern definition method, it is characterized in that, step comprises:
1) growth first medium film on a silicon substrate;
2) growth second medium film; The etch rate of described second medium film in wet etching or isotropic gas etching is less than first medium film;
3) with first medium film for etching barrier layer, formed the groove of second medium film by photoetching and etching;
4) by wet etching or isotropic gas etching method, first medium film is etched, form transverse concave groove in described beneath trenches;
5) growth the 3rd deielectric-coating;
6) magneto-resistor sensor film is sputtered.
2. method according to claim 1, is characterized in that, described first medium film and the 3rd deielectric-coating are Si3N4, and described second medium film is silica.
3. method according to claim 1, is characterized in that, step 2), with chemical gaseous phase depositing process growth second medium film.
4. method according to claim 1, is characterized in that, step 4), the thickness of the first medium film etched away is greater than 2 times of the 3rd deielectric-coating thickness and the thickness sum of magneto-resistor sensor film.
5. method according to claim 4, is characterized in that, step 4), 2 times of Thickness Ratio the 3rd deielectric-coating thickness and large 0.5 ~ 3 μm of the thickness sum of magneto-resistor sensor film of the first medium film etched away.
6.3D AMR transducer Z-direction magneto-resistor sensor film pattern definition method, it is characterized in that, step comprises:
1) growth first medium film on a silicon substrate;
2) growth the 4th deielectric-coating;
3) growth second medium film; The etch rate of described second medium film in wet etching or isotropic gas etching is less than the 4th deielectric-coating;
4) with first medium film for etching barrier layer, formed the groove of second medium film by photoetching and etching;
5) by wet etching or isotropic gas etching method, the 4th deielectric-coating is etched, form transverse concave groove in described beneath trenches;
6) growth the 3rd deielectric-coating;
7) magneto-resistor sensor film is sputtered.
7. method according to claim 6, it is characterized in that, described first medium film and the 3rd deielectric-coating are Si3N4, and described second medium film is silica, and described 4th deielectric-coating is that doping content is lower than the polyimides after the silica of second medium film or solidification.
8. the method according to claim 6 or 7, is characterized in that, step 2), with chemical gaseous phase depositing process growth second medium film.
9. method according to claim 6, is characterized in that, step 4), the thickness of the 4th deielectric-coating etched away is greater than 2 times of the 3rd deielectric-coating thickness and the thickness sum of magneto-resistor sensor film.
10. method according to claim 9, is characterized in that, step 4), 2 times of Thickness Ratio the 3rd deielectric-coating thickness and large 0.5 ~ 3 μm of the thickness sum of magneto-resistor sensor film of the 4th deielectric-coating etched away.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021035698A1 (en) * | 2019-08-30 | 2021-03-04 | 京东方科技集团股份有限公司 | Backplane, backlight source, display device, and method for manufacturing backplane |
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| CN103178206A (en) * | 2013-02-26 | 2013-06-26 | 上海宏力半导体制造有限公司 | Etching method for triaxial magnetic sensor |
| CN103400934A (en) * | 2013-07-24 | 2013-11-20 | 上海宏力半导体制造有限公司 | Formation method of 3D magnetic sensor |
| CN104241519A (en) * | 2013-06-21 | 2014-12-24 | 上海矽睿科技有限公司 | Method for improving performance of magnetic materials and manufacturing method of magnetic sensing device |
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| JPH10325949A (en) * | 1997-05-26 | 1998-12-08 | Seiko Epson Corp | Substrate for liquid crystal panel, its production, liquid crystal panel and electronic appliance using liquid crystal panel |
| CN103178206A (en) * | 2013-02-26 | 2013-06-26 | 上海宏力半导体制造有限公司 | Etching method for triaxial magnetic sensor |
| CN104241519A (en) * | 2013-06-21 | 2014-12-24 | 上海矽睿科技有限公司 | Method for improving performance of magnetic materials and manufacturing method of magnetic sensing device |
| CN103400934A (en) * | 2013-07-24 | 2013-11-20 | 上海宏力半导体制造有限公司 | Formation method of 3D magnetic sensor |
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