CN104576767A - 一种用于太阳能电池组件的焊带 - Google Patents

一种用于太阳能电池组件的焊带 Download PDF

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CN104576767A
CN104576767A CN201510041053.2A CN201510041053A CN104576767A CN 104576767 A CN104576767 A CN 104576767A CN 201510041053 A CN201510041053 A CN 201510041053A CN 104576767 A CN104576767 A CN 104576767A
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metal wire
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CN104576767B (zh
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万松博
王登志
王栩生
邢国强
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Funing atlas sunshine Power Technology Co., Ltd
CSI Cells Co Ltd
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CSI Solar Technologies Inc
CSI GCL Solar Manufacturing Yancheng Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种用于太阳能电池组件的焊带,包括金属线体,所述金属线体的横截面为弓形,且其面积大于等于半圆面积。发明通过在圆形的基础上设置一个切面,在不影响遮光损失、不明显增加电阻的前提下,不仅能减少焊带高度,而且还能增加焊接的可靠性,具有积极的现实意义。

Description

一种用于太阳能电池组件的焊带
技术领域
本发明涉及太阳能电池领域,具体涉及一种用于太阳能电池组件的焊带。
背景技术
常规的化石燃料日益消耗殆尽,在所有的可持续能源中,太阳能无疑是一种最清洁、最普遍和最有潜力的替代能源。光伏发电是最具可持续发展理想特征的发电技术之一。目前,在所有的太阳能电池中,硅太阳能电池是得到大范围商业推广的太阳能电池之一,这是由于硅材料在地壳中有着极为丰富的储量,同时硅太阳能电池相比其他类型的太阳能电池,有着优异的电学性能和机械性能。在未来光伏技术的发展中,随着硅太阳能电池光电性能的进一步提高,硅材料价格的进一步降低,硅太阳能电池将在光伏领域占据重要的地位。
焊带是用在太阳能电池组件上的焊接装置,主要起到连接导电的作用。目前行业内常用的焊带都是呈长条形,主要有2种,一是横截面为长方形的焊带,二是横截面为圆形的焊带。对于横截面为长方形的焊带而言,该焊带遮光严重,影响了组件功率。对于横截面为圆形的焊带而言,虽然圆形焊带可以将大部分照射到其上的光线反射回电池片表面,从而避免其遮光影响;但是圆形焊带有两个缺点:(1)为了达到降低电阻的目的,圆形焊带的直径需要设置的比较大,这就导致焊接时焊带的高度比较高,这就必须增加组件中EVA的厚度,导致成本上升;(2)圆形焊带同电池片的接触面太小,从而造成焊接可靠性较差。
发明内容
本发明的目的是提供一种用于太阳能电池组件的焊带。
为达到上述发明目的,本发明采用的技术方案是:一种用于太阳能电池组件的焊带,包括金属线本体,所述金属线本体的横截面为弓形,且其面积大于等于半圆面积。
上文中,所述金属线本体的横截面为弓形,且其面积大于半圆面积,即其横截面为大半个圆形,相当于在原来圆形的基础上切掉了一部分。其切面是用来与电池形成电连接的。
上述技术方案中,所述金属线本体的横截面中,其弦所对应的角度为45~180度。
上述技术方案中,所述金属线本体的弦切面处设有切面涂层。切面涂层的作用是用来和电池片电连接的,当然也可以采用导电胶代替。
优选的,所述切面涂层为低熔点金属层或低熔点金属合金层;所述低熔点金属层选自Bi、In、Sn或Pb层,所述低熔点金属合金层选自Bi、In、Sn、Pb中的任意两种或两种以上合金层。在层压的过程中,低熔点的金属或合金层会熔融并与太阳能电池的金属电极实现电连接。当然,切面涂层也可以采用常规的焊接材料,通过焊接方式实现与金属电极的电连接。
上述技术方案中,所述金属线为铜线。其直径为150~800微米。
上述技术方案中,所述金属线本体的弧面处设有反射层。反射层可以采用高反射材料,其目的是将大部分照射到其上的光线反射回电池片表面,进一步提高光的利用率。
所述反射层可以是反光层(起到反射作用),同时也可以是氧化保护层,起到氧化保护的作用。
切面涂层和反射层可以采用同种材料。
上文中,所述反射层为低熔点金属层或低熔点金属合金层;所述低熔点金属层选自Bi、In、Sn或Pb层,所述低熔点金属合金层选自Bi、In、Sn、Pb中的任意两种或两种以上合金层。金属合金层的选择是为了节约贵金属的耗量,比如In。
优选的,切面涂层和反射层可以采用不同材料,这样可以进一步减少贵金属的耗量,降低成本。
上述技术方案中,所述反射层的厚度为0.5~30微米。优选0.5~20微米。
由于上述技术方案运用,本发明与现有技术相比具有下列优点:
1.本发明设计了一种用于太阳能电池组件的焊带,通过在圆形的基础上设置一个切面,在不影响遮光损失、不明显增加电阻的前提下,不仅能减少焊带高度,而且还能增加焊接的可靠性,具有积极的现实意义;
2.本发明设计的焊带还可以和高反射材料相结合来使用,可以进一步提高光的利用率,提高组件的输出功率;
3.本发明在焊带弧面和切面上分别设置不同的涂层,并对涂层的成分进行优化,能够节省贵金属涂层的耗量,降低成本,同时还能提高后续工艺的兼容性,能够更好的与不同的电连接方式相匹配;
4.本发明的结构简单,易于制备,成本较低,适于推广应用。
附图说明
图1是本发明实施例一的剖视图。
其中:1、金属线本体;2、切面涂层;3、反射层。
具体实施方式
下面结合附图及实施例对本发明作进一步描述:
实施例一。
参见图1所示,一种用于太阳能电池组件的焊带,包括金属线本体1,所述金属线本体的横截面为弓形,且其面积大于半圆面积。
所述金属线本体的弦切面处设有切面涂层2。
所述切面涂层为In/Sn合金。
所述金属线本体的横截面中,其弦所对应的角度为80度。
所述金属线为铜线。
所述金属线的直径为500微米。
所述金属线本体的弧所在的外表面处设有反射层3。所述反射层为锡层。即本实施例中切面涂层和反射层可以采用不同种材料。
所述反射层的厚度为10微米。

Claims (9)

1.一种用于太阳能电池组件的焊带,包括金属线本体(1),其特征在于:所述金属线本体的横截面为弓形,且其面积大于等于半圆面积。
2.根据权利要求1所述的焊带,其特征在于:所述金属线本体的弦切面处设有切面涂层(2)。
3.根据权利要求2所述的焊带,其特征在于:所述切面涂层为低熔点金属层或低熔点金属合金层;所述低熔点金属层选自Bi、In、Sn或Pb层,所述低熔点金属合金层选自Bi、In、Sn、Pb中的任意两种或两种以上合金层。
4.根据权利要求1所述的焊带,其特征在于:所述金属线本体的横截面中,其弦所对应的角度为45~180度。
5.根据权利要求1所述的焊带,其特征在于:所述金属线为铜线。
6.根据权利要求1所述的焊带,其特征在于:所述金属线的直径为150~800微米。
7.根据权利要求1所述的焊带,其特征在于:所述金属线本体的弧面处设有反射层(3)。
8.根据权利要求7所述的焊带,其特征在于:所述反射层的厚度为0.5~30微米。
9.根据权利要求7或8所述的焊带,其特征在于:所述反射层为低熔点金属层或低熔点金属合金层;所述低熔点金属层选自Bi、In、Sn或Pb层,所述低熔点金属合金层选自Bi、In、Sn、Pb中的任意两种或两种以上合金层。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653906A (zh) * 2017-01-10 2017-05-10 成都聚立汇信科技有限公司 一种高效光伏组件及其层压工艺
CN108717952A (zh) * 2018-08-15 2018-10-30 浙江晶科能源有限公司 一种聚光焊带
CN109802000A (zh) * 2017-11-15 2019-05-24 阿特斯阳光电力集团有限公司 光伏焊带、光伏组件及其制造方法
FR3136589A1 (fr) 2022-06-14 2023-12-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Élément d’interconnexion, chaîne photovoltaïque et procédés associés

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CN204538034U (zh) * 2015-01-27 2015-08-05 苏州阿特斯阳光电力科技有限公司 一种用于太阳能电池组件的焊带

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CN108717952A (zh) * 2018-08-15 2018-10-30 浙江晶科能源有限公司 一种聚光焊带
FR3136589A1 (fr) 2022-06-14 2023-12-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Élément d’interconnexion, chaîne photovoltaïque et procédés associés
EP4293730A1 (fr) 2022-06-14 2023-12-20 Commissariat à l'énergie atomique et aux énergies alternatives Élément d'interconnexion, chaîne photovoltaïque et procédés associés

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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province

Patentee after: CSI Cells Co.,Ltd.

Patentee after: Funing atlas sunshine Power Technology Co., Ltd

Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province

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Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd.

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