CN104576611A - Method for compensating tilting of critical dimension scanning electronic microscope detection pattern - Google Patents
Method for compensating tilting of critical dimension scanning electronic microscope detection pattern Download PDFInfo
- Publication number
- CN104576611A CN104576611A CN201310489519.6A CN201310489519A CN104576611A CN 104576611 A CN104576611 A CN 104576611A CN 201310489519 A CN201310489519 A CN 201310489519A CN 104576611 A CN104576611 A CN 104576611A
- Authority
- CN
- China
- Prior art keywords
- pattern
- critical size
- deflection angle
- detector
- deflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a method for compensating the tilting of a critical dimension scanning electronic microscope (CD-SEM) detection pattern. The method is characterized by comprising the following steps: selecting a pattern of a same region of a same crystal wafer as a CD-SEM detection region; selecting different deflection angles of a CD-SEM detector, obtaining the pattern CD of the detection region corresponding to each deflection angle, and obtaining a corresponding relationship between the deflection angle and the pattern CD; obtaining a fitted curve between the deflection angle and the pattern CD according to the corresponding relationship between the deflection angle and the pattern CD; selecting the deflection angle corresponding to the minimal pattern CD in the fitted curve as a deflection compensation value of the CD-SEM detector. Due to the adoption of the method, the tilted CD-SEM detection pattern can be scientifically subjected to tilting compensation.
Description
Technical field
The application relates to IC manufacturing field, and particularly one compensates the method that critical size scanning electron microscopy (CD-SEM) check pattern tilts.
Background technology
At present, in semiconductor device manufactures, adopt critical size scanning electron microscopy (Critical Dimension Scanning Electronic Microscope, CD-SEM) critical size of the pattern be produced on wafer is measured, be with figuratum wafer can be placed on CD-SEM board, carry out on-line measurement by CD-SEM.In semiconductor device manufactures, the CD of of greatest concern is some specific pattern on wafer, the such as CD etc. of connecting hole (via), device widths (line) and device pitch (space) pattern.
It should be noted that, CD-SEM board is through long-term use, inevitably there is parts depreciation problem of aging, such as detector is aging, the problems such as the seat wear of bearing wafer, are placed on the pattern CD that CD-SEM board carries out detecting and just there will be tilt phenomenon, particularly for the pattern CD with line and Space, the pattern CD measured will be caused to occur skew, as shown in Figure 1.In Fig. 1, pattern AA tilts, obviously bigger than normal by the CD value of AA detected by CD-SEM, and the concrete method of measurement of CD value is prior art, does not repeat them here.
Along with the development of semiconductor fabrication, the CD of semiconductor device is more and more less, and prior art is all adopt naked eyes to carry out range estimation to judge whether check pattern tilts, and then carries out coarse adjustment.When CD is very little, when pattern angle of inclination is smaller, naked eyes cannot find at all, so cannot scientifically deal with problems.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is: how to obtain pattern CD accurately.
For solving the problems of the technologies described above, technical scheme of the present invention is specifically achieved in that
The invention discloses a kind of method compensating critical size scanning electron microscopy check pattern and tilt, the method comprises:
Select the pattern of the same area of same wafer, as the surveyed area of critical size scanning electron microscopy;
Select the deflection angle that the detector of critical size scanning electron microscopy is different, obtain the pattern critical size of the surveyed area corresponding to each deflection angle, obtain the corresponding relation of deflection angle and pattern critical size;
The matched curve between deflection angle and pattern critical size is obtained according to the corresponding relation of deflection angle and pattern critical size;
Choose the deflection angle corresponding to pattern critical size minimum value in matched curve, as the deflection compensated value of critical size scanning electron microscopy detector.
The deflection angle that the detector of described selection critical size scanning electron microscopy is different, the method obtaining the pattern critical size of the surveyed area corresponding to each deflection angle comprises:
Detector is deflected left gradually from reference position, under predetermined angle intervals, selects different deflection angles, obtain the pattern critical size of each surveyed area left corresponding to deflection angle;
, detector is deflected to the right gradually from reference position meanwhile, under predetermined angle intervals, select different deflection angles, obtain the pattern critical size of each surveyed area to the right corresponding to deflection angle.
The method comprises further: the detector of critical size scanning electron microscopy is carried out deflection compensated from reference position with the deflection compensated value of described critical size scanning electron microscopy detector, using the detector position after deflection compensated as new reference position, the detection of critical size scanning electron microscopy is carried out to new wafer pattern.
Under the same enlargement ratio of critical size scanning electron microscopy, select the deflection angle that the detector of critical size scanning electron microscopy is different, obtain the pattern critical size of the surveyed area corresponding to each deflection angle.
Described predetermined angle intervals is 0.1 ~ 0.2 degree, the maximum angle deflected to the right or left 1 ~ 2 degree.
As seen from the above technical solutions, the embodiment of the present invention selects the pattern of the same area of same wafer, as the surveyed area of critical size scanning electron microscopy CD-SEM; Select the deflection angle that the detector of CD-SEM is different, obtain the pattern CD of the surveyed area corresponding to each deflection angle, obtain the corresponding relation of deflection angle and pattern CD; The matched curve between deflection angle and pattern CD is obtained according to the corresponding relation of deflection angle and pattern CD; Choose the deflection angle corresponding to pattern CD minimum value in matched curve, as the deflection compensated value of CD-SEM detector.Like this, just can the pattern tilted scientifically be finely tuned, obtain pattern CD accurately.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that prior art CD-SEM detects lower CD appearance skew.
Fig. 2 is the method flow schematic diagram that the present invention compensates the inclination of CD-SEM check pattern.
Fig. 3 is the matched curve schematic diagram between deflection angle and pattern CD.
Embodiment
Core concept of the present invention is: be placed on CD-SEM board by figuratum for band wafer, when not knowing whether pattern tilts, the detector of CD-SEM is artificially rotated to an angle left and to the right from reference position, under predetermined angle intervals, select different deflection angles, obtain the pattern CD of the surveyed area corresponding to each deflection angle.Wherein, the deflection angle corresponding to CD minimum value, as the deflection compensated value of CD-SEM detector.That is, CD-SEM offsets due to physical address, causes probe datum position to offset, and needs to compensate according to the deflection compensated value of described CD-SEM detector, obtains new reference position.So when carrying out CD-SEM to new wafer pattern and detecting, detector is placed in new reference position and just can obtains pattern CD accurately.
For making object of the present invention, technical scheme and advantage clearly understand, to develop simultaneously embodiment referring to accompanying drawing, the present invention is described in more detail.
The present invention compensates the method flow schematic diagram that CD-SEM check pattern tilts, and as shown in Figure 2, it comprises the following steps:
Step 21, select the pattern of the same area of same wafer, as the surveyed area of critical size scanning electron microscopy CD-SEM;
Step 22, the deflection angle selecting the detector of CD-SEM different, obtain the pattern CD of the surveyed area corresponding to each deflection angle, obtain the corresponding relation of deflection angle and pattern CD;
It should be noted that the deflection angle selecting the detector of CD-SEM different, obtaining the pattern CD of the surveyed area corresponding to each deflection angle, is all obtain under the same enlargement ratio of CD-SEM.
Wherein, particularly, select the deflection angle that the detector of CD-SEM is different, the method obtaining the pattern CD of the surveyed area corresponding to each deflection angle comprises:
Detector is deflected left gradually from reference position, under predetermined angle intervals, selects different deflection angles, obtain the pattern CD of each surveyed area left corresponding to deflection angle;
, detector is deflected to the right gradually from reference position meanwhile, under predetermined angle intervals, select different deflection angles, obtain the pattern CD of each surveyed area to the right corresponding to deflection angle.
Here, predetermined angle intervals is the smaller the better, and the deflection compensated value of the follow-up CD-SEM detector obtained is more accurate.General, according to existing processing procedure, predetermined angle intervals is 0.1 ~ 0.2 degree, the maximum angle deflected to the right or left 1 ~ 2 degree.
Step 23, obtain the matched curve between deflection angle and pattern CD according to the corresponding relation of deflection angle and pattern CD;
Step 24, the deflection angle corresponding to pattern CD minimum value chosen in matched curve, as the deflection compensated value of CD-SEM detector.
So far, obtain the deflection compensated value of CD-SEM detector, need to compensate according to the deflection compensated value of described CD-SEM detector, obtain new reference position.So, next, the method comprises further: the detector of CD-SEM is carried out deflection compensated from reference position with the deflection compensated value of described CD-SEM detector, using the detector position after deflection compensated as new reference position, carries out CD-SEM detection to new wafer pattern.
Enumerate specific embodiment to be below described in detail to said method.The pattern CD detected can be active area (AA), also can be metal interconnecting layer (Metal).
First, be placed on CD-SEM board by figuratum for band wafer, because CD is very little, many times range estimation can not determine whether pattern tilts, and thus can not determine that whether the pattern CD that now detected by CD-SEM is CD accurately.
After on the bearing base that wafer is placed into CD-SEM board, just cannot move and have rotated, what now can deflect is the detector of CD-SEM, and the angle of detector deflection is different, and the pattern CD of acquisition is different.
Then, the deflection angle of detector on reference position is designated as 0 degree, and to record the CD value that detector measures wafer inspection zone map on reference position be 0.3143 micron.
Detector is deflected left gradually from reference position, deflection angle be respectively-0.2 degree ,-0.4 degree ,-0.6 degree ,-0.8 degree ,-1 spend time, measure the CD value of the pattern of the same area of wafer, be respectively 0.3138 micron, 0.3154 micron, 0.3158 micron, 0.3164 micron, 0.3181 micron;
Detector is deflected to the right gradually from reference position, when deflection angle is respectively 0.2 degree, 0.4 degree, 0.6 degree, 0.8 degree, 1 degree, measure the CD value of the pattern of the same area of wafer, be respectively 0.3143 micron, 0.3141 micron, 0.3146 micron, 0.3149 micron, 0.3147 micron.
According to above-mentioned measurement, the corresponding relation obtaining deflection angle and pattern CD is as shown in table 1.It should be noted that table 1 to obtain CD be all under same enlargement ratio, embodiment of the present invention enlargement ratio is 150K.
Table 1
Next, according to the corresponding relation of table 1, obtain matched curve between deflection angle and pattern CD as shown in Figure 3.The binary functional equation formula of matched curve is: Y=0.0022x
2-0.0013x+0.3142.
As can be seen from Figure 3, the pattern CD minimum value in matched curve is 0.3141 micron, and the deflection angle of its correspondence is 0.25 degree.As can be seen from above-described embodiment, if the deflection angle in matched curve corresponding to pattern CD minimum value is A degree (A is not equal to 0), so just using the deflection compensated value of A degree as CD-SEM detector, the detector of CD-SEM is carried out deflection compensated from reference position with A degree, using the detector position after deflection compensated as new reference position, CD-SEM detection is carried out to new wafer pattern.
If, the deflection angle corresponding to pattern CD minimum value in matched curve is 0 degree, then illustrate that the pattern that the initial reference position of this detector is measured is exactly vertical, the CD of pattern is also accurately, do not need to carry out angle compensation, when carrying out CD-SEM detection to new wafer pattern, each pattern CD accurately, as reference position, just can be measured in the position that detector still can be adopted present.
To sum up, according to method of the present invention, select the pattern of the same area of same wafer, as the surveyed area of critical size scanning electron microscopy CD-SEM; Select the deflection angle that the detector of CD-SEM is different, obtain the pattern CD of the surveyed area corresponding to each deflection angle, obtain the corresponding relation of deflection angle and pattern CD; The matched curve between deflection angle and pattern CD is obtained according to the corresponding relation of deflection angle and pattern CD; Choose the deflection angle corresponding to pattern CD minimum value in matched curve, as the deflection compensated value of CD-SEM detector.Like this, just can the pattern tilted scientifically be finely tuned, obtain pattern CD accurately.
It should be noted that, according to the difference of CD-SEM check pattern, enlargement ratio and deflection angle, predetermined angular intervals can according to the difference of embody rule, select flexibly, numerical value in above-described embodiment just as a reference of embody rule, does not limit method of the present invention.
The foregoing is only the preferred embodiment of the application, not in order to limit the application, within all spirit in the application and principle, any amendment made, equivalent replacements, improvement etc., all should be included within scope that the application protects.
Claims (5)
1. compensate the method that critical size scanning electron microscopy check pattern tilts, it is characterized in that, the method comprises:
Select the pattern of the same area of same wafer, as the surveyed area of critical size scanning electron microscopy;
Select the deflection angle that the detector of critical size scanning electron microscopy is different, obtain the pattern critical size of the surveyed area corresponding to each deflection angle, obtain the corresponding relation of deflection angle and pattern critical size;
The matched curve between deflection angle and pattern critical size is obtained according to the corresponding relation of deflection angle and pattern critical size;
Choose the deflection angle corresponding to pattern critical size minimum value in matched curve, as the deflection compensated value of critical size scanning electron microscopy detector.
2. the method for claim 1, is characterized in that, the deflection angle that the detector of described selection critical size scanning electron microscopy is different, and the method obtaining the pattern critical size of the surveyed area corresponding to each deflection angle comprises:
Detector is deflected left gradually from reference position, under predetermined angle intervals, selects different deflection angles, obtain the pattern critical size of each surveyed area left corresponding to deflection angle;
, detector is deflected to the right gradually from reference position meanwhile, under predetermined angle intervals, select different deflection angles, obtain the pattern critical size of each surveyed area to the right corresponding to deflection angle.
3. method as claimed in claim 2, it is characterized in that, the method comprises further: the detector of critical size scanning electron microscopy is carried out deflection compensated from reference position with the deflection compensated value of described critical size scanning electron microscopy detector, using the detector position after deflection compensated as new reference position, the detection of critical size scanning electron microscopy is carried out to new wafer pattern.
4. method as claimed in claim 3, it is characterized in that, under the same enlargement ratio of critical size scanning electron microscopy, select the deflection angle that the detector of critical size scanning electron microscopy is different, obtain the pattern critical size of the surveyed area corresponding to each deflection angle.
5. method as claimed in claim 4, it is characterized in that, described predetermined angle intervals is 0.1 ~ 0.2 degree, the maximum angle deflected to the right or left 1 ~ 2 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310489519.6A CN104576611B (en) | 2013-10-18 | 2013-10-18 | Compensate the inclined method of critical size SEM detection pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310489519.6A CN104576611B (en) | 2013-10-18 | 2013-10-18 | Compensate the inclined method of critical size SEM detection pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576611A true CN104576611A (en) | 2015-04-29 |
| CN104576611B CN104576611B (en) | 2017-09-22 |
Family
ID=53092303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310489519.6A Active CN104576611B (en) | 2013-10-18 | 2013-10-18 | Compensate the inclined method of critical size SEM detection pattern |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576611B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690162A (en) * | 2018-07-06 | 2020-01-14 | 长鑫存储技术有限公司 | Overlay offset-based compensation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100033560A1 (en) * | 2008-08-06 | 2010-02-11 | Hitachi High-Technologies Corporation | Method and Apparatus of Tilted Illumination Observation |
| CN101846497A (en) * | 2010-04-29 | 2010-09-29 | 上海宏力半导体制造有限公司 | Key size calibration method and device thereof |
| CN102519994A (en) * | 2011-11-28 | 2012-06-27 | 上海华力微电子有限公司 | Accuracy monitoring method for rotary fixator of scanning electronic microscope |
-
2013
- 2013-10-18 CN CN201310489519.6A patent/CN104576611B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100033560A1 (en) * | 2008-08-06 | 2010-02-11 | Hitachi High-Technologies Corporation | Method and Apparatus of Tilted Illumination Observation |
| CN101846497A (en) * | 2010-04-29 | 2010-09-29 | 上海宏力半导体制造有限公司 | Key size calibration method and device thereof |
| CN102519994A (en) * | 2011-11-28 | 2012-06-27 | 上海华力微电子有限公司 | Accuracy monitoring method for rotary fixator of scanning electronic microscope |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690162A (en) * | 2018-07-06 | 2020-01-14 | 长鑫存储技术有限公司 | Overlay offset-based compensation method |
| CN110690162B (en) * | 2018-07-06 | 2022-02-01 | 长鑫存储技术有限公司 | Overlay offset-based compensation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576611B (en) | 2017-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8768665B2 (en) | Site based quantification of substrate topography and its relation to lithography defocus and overlay | |
| US8988521B2 (en) | Method of measuring critical dimension of pattern and apparatus for performing the same | |
| CN107993955A (en) | A kind of method for detecting defects of wafer edge | |
| CN104425302A (en) | Defect detection method and device of semiconductor device | |
| CN102956532B (en) | For aligning wafer for the system and method manufactured | |
| KR20160006054A (en) | Method for Inspecting Compact Parts Formed on Substrate in Defect Inspection | |
| CN105719993A (en) | Method for correcting position deviations of electron microscope electron beam and wafer | |
| JP2010034138A (en) | Pattern inspection apparatus, pattern inspection method and program | |
| US10352966B2 (en) | Method, system for utilizing a probe card, and the probe card | |
| CN110197797B (en) | Standard sheet for defect detection | |
| CN104576611A (en) | Method for compensating tilting of critical dimension scanning electronic microscope detection pattern | |
| CN109073991A (en) | The method of the position of mask clamp is detected on measurement table | |
| CN106340482B (en) | Automatic correction calibration method based on wafer corner and notch positioning | |
| US20090033353A1 (en) | Systems and methods for electrical characterization of inter-layer alignment | |
| CN102931114A (en) | Wafer testing method | |
| CN101546129B (en) | Method for monitoring exposure device by adopting side wall angles | |
| US10508893B2 (en) | Flatness detector | |
| US10584955B2 (en) | Combined workpiece holder and calibration profile configuration for precision surface profile measurement | |
| KR20080002044A (en) | Method of setting an inspection area | |
| TWI771011B (en) | Method for compensating distance between probe tip and device under test after temperature changes | |
| CN208921061U (en) | A kind of detection jig of substrate deformation amount | |
| Tzai et al. | Techniques for improving overlay accuracy by using device correlated metrology targets as reference | |
| US7966142B2 (en) | Multi-variable regression for metrology | |
| CN103500721A (en) | Method for measuring alignment errors of through holes and lower-layer metal lines | |
| CN104915516B (en) | A kind of application process of mask plate and isolated hole addressing pattern in the measurements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |