CN104576354B - A kind of indium antimonide wafer chemically polishing method - Google Patents
A kind of indium antimonide wafer chemically polishing method Download PDFInfo
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- CN104576354B CN104576354B CN201510014588.0A CN201510014588A CN104576354B CN 104576354 B CN104576354 B CN 104576354B CN 201510014588 A CN201510014588 A CN 201510014588A CN 104576354 B CN104576354 B CN 104576354B
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- indium antimonide
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- flushing liquor
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- 238000005498 polishing Methods 0.000 title claims abstract description 158
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 67
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000011049 filling Methods 0.000 claims abstract description 3
- 238000011010 flushing procedure Methods 0.000 claims description 37
- 239000007788 liquid Substances 0.000 claims description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 238000003756 stirring Methods 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000007521 mechanical polishing technique Methods 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention proposes a kind of indium antimonide wafer chemically polishing method.Wherein, after the completion of chemical mechanical polishing, in the polishing trough that the polishing disk for being bonded with indium antimonide wafer is inverted in the bromine methanol chemical polishing solution for filling 0.005%~10%, so that the surface of the indium antimonide wafer is immersed in the bromine methanol chemical polishing solution towards the bottom of the polishing trough and the indium antimonide wafer, to carry out chemical polishing.The roughness on indium antimonide wafer surface can substantially be reduced using this chemically polishing method, the damage on surface is removed, the smoothness of wafer surface is improved.
Description
Technical field
The present invention relates to the chemical polishing technical field of chip, more particularly to a kind of indium antimonide wafer chemically polishing method.
Background technology
Indium antimonide InSb is a kind of group Ⅲ-Ⅴ compound semiconductor material, because there is high electron mobility, narrow taboo
Unique semiconductor property such as electron effective mass of bandwidth and very little and widely paid attention to.In manufacture infrared acquisition
Have in terms of device, hall device and magnetoresistive element and widely apply.Indium antimonide InSb low energy gap width is relatively simple with its
High-purity crystal material preparation process determine it can be used for manufacture 3~5 microns of medium-wave infrared detectors, they are still this so far
A kind of infrared detector that individual wave band is most widely used.So far, the infrared detector based on indium antimonide InSb materials is
By unit, diverse development to one-dimensional alignment and two-dimensional focal plane array.With the increase of detector pixel number, the sound of detector
Should the important quality factor such as rate, noise, response time not only depend on the carrier concentrations of indium antimonide InSb materials, mobility,
The semiconductor parameters such as life-span, but also have important relationship with the surface state of indium antimonide InSb chips.In addition, indium antimonide InSb is red
The impedance behavior index of outer photodetector, except having outside the Pass with PN junction characteristic, the also surface state with indium antimonide InSb chips
It is directly relevant, wherein, the increase of surface roughness can increase device noise, surface dangling bonds density is become big in addition,
Strengthen superficial attractive forces, it is easier to adsorbing metal ions, cause the electrical property of indium antimonide InSb chips to decline, leakage current increases
Greatly, so as to influence the performance of device.In addition, chemical mechanical polishing technique causes indium antimonide InSb wafer surfaces and the polishing being pressurized
There is inevitably friction between pad, this friction will bring a certain degree of machine to the surface of indium antimonide InSb chips
Tool is damaged.And indium antimonide InSb materials hardness compared with other semi-conducting materials is smaller, so coarse after chemical mechanical polishing
Degree can be than larger.Therefore, in order to eliminate this mechanical damage, it is necessary to carry out chemical polishing to indium antimonide InSb chips, but often
It is due to these corrosive liquids although corrosive liquid can also obtain preferable polished surface when condition control is proper
Corrosion rate quickly, usually has a large amount of gas evolutions, and easily aoxidize in corrosion process so that indium antimonide InSb chips
Surface smoothness it is poor, this is totally unfavorable to preparing high-quality indium antimonide InSb infrared detectors.Accordingly, it would be desirable to one
Indium antimonide wafer chemically polishing method is planted, to solve above-mentioned technical problem present in prior art.
The content of the invention
The present invention provides a kind of indium antimonide wafer chemically polishing method.Can be obvious using this chemically polishing method
The roughness on indium antimonide wafer surface is reduced, the damage on surface is removed, the smoothness of wafer surface is improved.
The technical solution adopted by the present invention is：
A kind of indium antimonide wafer chemically polishing method, wherein, after the completion of chemical mechanical polishing, indium antimonide wafer will be bonded with
Polishing disk be inverted in the polishing trough for the bromine methanol chemical polishing solution for filling 0.005%~10% so that the indium antimonide is brilliant
The surface of piece is immersed in the bromine methanol chemical polishing solution towards the bottom of the polishing trough and the indium antimonide wafer, with
Carry out chemical polishing.
Preferably, methods described also includes：Before polishing disk is inverted in polishing trough and during chemical polishing, in the antimony
Stir the bromine methanol chemical polishing solution in the lower section of indium chip.
Preferably, mixing speed is set as 50rpm/s~100rpm/s, and is inverted in the polishing disk in polishing trough
10~40min is stirred before.
Preferably, when before the polishing disk is inverted in the polishing trough with the chemical polishing, the bromine first is controlled
The temperature of alcohol chemical polishing solution is 0 DEG C~30 DEG C.
Preferably, the time of the chemical polishing is 10s~200s.
Preferably, after the completion of chemical polishing, rinsing step 1 is performed：Use temperature molten for 0 DEG C~30 DEG C of COMS level methanol
Liquid rinses indium antimonide wafer as the first flushing liquor.
Preferably, rinsing step 2 is performed after the completion of rinsing step 1：The second punching is used as using 0 DEG C~30 DEG C of deionized water
Washing lotion rinses the indium antimonide wafer 5min~20min.
Preferably, after the completion of rinsing step 2, indium antimonide wafer is dried up using nitrogen.
Preferably, the polishing fluid communication has liquid reserve tank, first flushing liquor and second flushing liquor difference
It is stored in the liquid reserve tank, after the completion of chemical polishing, by the bromine methanol chemical polishing solution under the indium antimonide wafer
Side's discharge, and first flushing liquor is imported in the polishing trough from the top of the polishing disk, wherein the bromine methanol
The flow of chemical polishing solution is less than the flow of first flushing liquor；After the completion of rinsing step 1, by first flushing liquor from institute
The lower section discharge of indium antimonide wafer is stated, and second flushing liquor is imported into the polishing trough from the top of the polishing disk
It is interior, wherein the flow of first flushing liquor is less than the flow of second flushing liquor.
Preferably, the top of the madial wall of the polishing trough is provided with the boss that extends internally to support the polishing disk.
It is direction towards the inside of polishing trough that term used in the present invention is " interior ".
Using above-mentioned technical proposal, the present invention at least has following advantages：
Concentration is 0.005%~10% chemical polishing solution pair in the indium antimonide wafer chemically polishing method of the present invention
Indium antimonide wafer carries out chemical polishing, not only solves what indium antimonide wafer surface roughness in traditional chemical glossing rose
Problem, and can be good at removing surface scratch, obtain the surface of flat-satin.
Brief description of the drawings
Fig. 1 is the flow chart of first preferred embodiment of indium antimonide wafer chemically polishing method of the present invention；
Fig. 2 is the flow chart of second preferred embodiment of indium antimonide wafer chemically polishing method of the present invention；
Fig. 3 is the flow chart of the 3rd preferred embodiment of indium antimonide wafer chemically polishing method of the present invention.
Embodiment
Further to illustrate the present invention to reach the technological means and effect that predetermined purpose is taken, below in conjunction with accompanying drawing
And preferred embodiment, the present invention is described in detail as after.
The indium antimonide wafer chemically polishing method that the present invention is provided can improve the roughness on indium antimonide wafer surface, improve
The smoothness on indium antimonide wafer surface, will be described in detail below the chemically polishing method and its each step of the present invention.
Wafer surface of the present invention refers to another table on the surface for being bonded to polishing disk relative to chip
Face.
Indium antimonide wafer chemically polishing method in the present invention is provided in after the completion of indium antimonide wafer chemical mechanical polishing
One of technique.Directly it is connected with chemical mechanical polishing technique in order to preferably realize, we are by chemical polishing appts
The top of the madial wall of polishing trough is provided with the boss extended internally, it is therefore an objective to indium antimonide wafer is stained with chemical mechanical polishing
Ceramic polished disk can be supported on boss, so that polishing disk is upside down in polishing with having preset distance with respect to the bottom of polishing trough
In groove, preset distance can be set according to conditions such as the capacity of the groove depth of polishing trough and bromine methanol chemical polishing solution.And this
A little boss can not touch indium antimonide wafer.So it can will directly be bonded with antimony after the completion of chemical mechanical polishing technique
The polishing disk for changing indium chip is inverted in polishing trough, so that the surface of indium antimonide wafer is towards the bottom of polishing trough and indium antimonide
Chip is immersed in bromine methanol chemical polishing solution.It is possible thereby to complete the chemical polishing of indium antimonide wafer, and it will directly be bonded with
The way that the polishing disk of indium antimonide wafer is inverted in polishing trough avoids again unloading indium antimonide wafer after the completion of chemical mechanical polishing
Under, so as to directly carry out chemical polishing with polishing disk, thus reduce secondary contamination to chip and wafer surface
Scratch.The polishing disk for generally carrying out chemical mechanical polishing is shaped as circle, preferably, and the internal chamber of polishing trough is cut
Face can be structured as circle, such as cylinder, to coordinate with the polishing disk.And the internal chamber of the cylindrical shape of polishing trough
The boss extended internally is provided with madial wall, to retain polishing disk, prevents it from being slid to the bottom of polishing trough.
Bromine methanol solution has fabulous polishing performance, but is easier to make indium antimonide wafer occur turned-down edge phenomenon, in addition,
Bromine methanol solution can cause the surface roughness of indium antimonide wafer to rise to the preferential etch of indium antimonide wafer.It is used as preferred reality
Apply filled in example, polishing trough 0.005%~10% bromine methanol chemical polishing solution, it is possible thereby to more accurately control chemical throwing
The corrosion rate of light, experiment display, corrosion thickness can when the concentration of bromine methanol chemical polishing solution is 0.005%~10% scope
Preferably controlled.Further, the time of chemical polishing is 10s~200s.It is possible thereby to realize corrosion thickness control 1
Less than~5 μm, so as to keep the smooth of polished surface, alleviate the surface roughness caused by chemical attack is uneven rise with
And the phenomenon such as turned-down edge.
As first preferred embodiment of the chemically polishing method of the present invention, as shown in figure 1, polishing disk is inverted in polishing
Before in groove and during chemical polishing, in the lower section stirring bromine methanol chemical polishing solution of indium antimonide wafer.It can use and be arranged on throwing
The magnetic stirring bar of light trench bottom is stirred, and polishing disk can stir 10min~40min before being inverted in polishing trough, by
This can improve the corrosion rate of chemical polishing, and can equably polish the surface of indium antimonide wafer.Preferably, speed is stirred
Degree is set as 50rpm/s~100rpm/s, because the strong oxidizing property of bromine, indium antimonide wafer compares in chemical polishing process
It is oxidized easily, so before polishing disk is inverted in polishing disk and in chemical polishing process, control bromine methanol chemistry is thrown
The temperature of light liquid is 0 DEG C~30 DEG C, and controls the temperature of flushing liquor after the completion of chemical polishing for 0 DEG C~30 DEG C.Wherein rush
Washing lotion includes the first flushing liquor and the second flushing liquor, and specific flushing process is as follows.
Second preferred embodiment of the chemically polishing method of the present invention is illustrated in figure 2, after the completion of chemical polishing, is performed
Rinsing step 1：Temperature is used to rinse indium antimonide wafer as the first flushing liquor for 0 DEG C~30 DEG C of COMS level methanol solutions.
It is illustrated in figure 3 execution after the completion of the 3rd preferred embodiment of the chemically polishing method of the present invention, rinsing step 1
Rinsing step 2：Indium antimonide wafer 5min~20min is rinsed using 0 DEG C~30 DEG C of deionized water as the second flushing liquor.
The indium antimonide wafer rinsed using substantial amounts of methanol solution as the first flushing liquor after polishing, and rinsed in methanol
The indium antimonide wafer that deionized water is rinsed after polishing as the second flushing liquor is reused after finishing.In order to prevent antimony after the completion of polishing
Change indium wafer surface residual water stain, after the completion of rinsing step 2, indium antimonide wafer is dried up using nitrogen.Antimony is dried up using nitrogen
Indium antimonide wafer is removed from polishing disk after indium chip.
Liquid reserve tank is equipped with preferred embodiment as rinsing step 1 and rinsing step 2, the liquid reserve tank and polishing trough fluid
Connection, the first flushing liquor and the second flushing liquor are respectively stored in liquid reserve tank, after the completion of chemical polishing, by bromine methanol chemical polishing
Liquid is discharged from the lower section of indium antimonide wafer, for example, the sluice gate for exhaust fluid can be provided with the bottom of polishing trough, in addition,
The first flushing liquor in liquid reserve tank can be stored in by pumping to import in polishing trough from the top of polishing disk, wherein bromine methanol
The flow of chemical polishing solution is less than the flow of the first flushing liquor.The setting of flow can throw indium antimonide wafer from bromine methanol chemistry
Be transitioned into light liquid in the first flushing liquor, it is to avoid indium antimonide wafer ingress of air and influence its performance.Similarly, rinsing step 1
After the completion of, the first flushing liquor is discharged from the lower section of indium antimonide wafer, and liquid reserve tank will be stored in using another suction pump
The second interior flushing liquor is imported in polishing trough from the top of polishing disk, wherein the flow of the first flushing liquor is less than the second flushing liquor
Flow.The setting of flow is again such that indium antimonide wafer is transitioned into from the first flushing liquor in the second flushing liquor, it is to avoid indium antimonide
Contact wafers air.By that analogy, after the completion of rinsing step 2, then indium antimonide wafer is transitioned into nitrogen from the second flushing liquor
In gas, until drying, it is to avoid indium antimonide wafer ingress of air.
Table 1 is using the indium antimonide obtained again using nitrogen drying indium antimonide wafer after the 3rd preferred embodiment of the present invention
The surface TTV and roughness of chip, wherein also listing indium antimonide wafer surface TTV and roughness before chemical polishing, pass through
Contrast is it can be found that simultaneously solution steadily and quickly stir by the concentration of strict control bromine methanol polishing fluid can be with
Take away the reactant on indium antimonide wafer surface in time, go on making chemical polishing stable reaction, but also can eliminate because
The concentration gradient that reaction is uneven and causes, so as to reduce the influence that preferential etch is caused.
Table 1
| Chip | TTV(μm) | Roughness (nm) |
| Before chemical polishing | 3.4 | 6.692 |
| After chemical polishing | 3.4 | 6.443 |
By the explanation of embodiment, the present invention can should be reached technological means that predetermined purpose taken and
Effect is able to more go deep into and specific understanding, but appended diagram is only to provide reference and purposes of discussion, not for originally
Invention is any limitation as.
Claims (6)
1. a kind of indium antimonide wafer chemically polishing method, it is characterised in that after the completion of chemical mechanical polishing, will be bonded with indium antimonide
The polishing disk of chip is inverted in the polishing trough for the bromine methanol chemical polishing solution for filling 0.005%~10% so that the antimony
The surface of indium chip is towards the bottom of the polishing trough and the indium antimonide wafer is immersed in the bromine methanol chemical polishing solution
In, to carry out chemical polishing, the time of the chemical polishing is 10s~200s；
Methods described, in addition to：Before polishing disk is inverted in polishing trough and during chemical polishing, under the indium antimonide wafer
Side's stirring bromine methanol chemical polishing solution；Mixing speed is set as 50rpm/s~100rpm/s, and is fallen in the polishing disk
10~40min of stirring before being placed in polishing trough；Before the polishing disk is inverted in the polishing trough and the chemical polishing
When, the temperature for controlling the bromine methanol chemical polishing solution is 0 DEG C~30 DEG C.
2. chemically polishing method according to claim 1, it is characterised in that after the completion of chemical polishing, performs rinsing step
1：Temperature is used to rinse indium antimonide wafer as the first flushing liquor for 0 DEG C~30 DEG C of COMS level methanol solutions.
3. chemically polishing method according to claim 2, it is characterised in that perform rinsing step after the completion of rinsing step 1
2：Indium antimonide wafer 5min~the 20min is rinsed using 0 DEG C~30 DEG C of deionized water as the second flushing liquor.
4. chemically polishing method according to claim 3, it is characterised in that after the completion of rinsing step 2, dried up using nitrogen
Indium antimonide wafer.
5. the chemically polishing method according to claim 3 or 4, it is characterised in that the polishing fluid communication has liquid storage
Case, first flushing liquor and second flushing liquor are stored respectively in the liquid reserve tank, after the completion of chemical polishing, will be described
Bromine methanol chemical polishing solution is discharged from the lower section of the indium antimonide wafer, and by first flushing liquor from the polishing disk
Top is imported in the polishing trough, wherein the flow of the bromine methanol chemical polishing solution is less than the flow of first flushing liquor；
After the completion of rinsing step 1, first flushing liquor is discharged from the lower section of the indium antimonide wafer, and described second is rinsed
Liquid is imported in the polishing trough from the top of the polishing disk, is rinsed wherein the flow of first flushing liquor is less than described second
The flow of liquid.
6. chemically polishing method according to claim 1, it is characterised in that the top of the madial wall of the polishing trough is set
There is the boss extended internally to support the polishing disk.
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| CN201510014588.0A CN104576354B (en) | 2015-01-12 | 2015-01-12 | A kind of indium antimonide wafer chemically polishing method |
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| CN201510014588.0A CN104576354B (en) | 2015-01-12 | 2015-01-12 | A kind of indium antimonide wafer chemically polishing method |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236396A (en) * | 2013-04-16 | 2013-08-07 | 中国电子科技集团公司第十一研究所 | Method for treating surfaces of epitaxial InSb substrates |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2585963B2 (en) * | 1993-12-10 | 1997-02-26 | 日本エクシード株式会社 | Polishing liquid for compound semiconductor and method for polishing compound semiconductor using the same |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103236396A (en) * | 2013-04-16 | 2013-08-07 | 中国电子科技集团公司第十一研究所 | Method for treating surfaces of epitaxial InSb substrates |
Non-Patent Citations (2)
| Title |
|---|
| InSb晶片化学抛光研究;程鹏等;《红外》;20090710;第30卷(第7期);第14-17页 * |
| 锑化铟表面腐蚀和清洗方法的俄歇评价;翟树礼;《红外与激光技术》;19830630(第3期);第39-44页 * |
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