CN104571717B - A kind of mould preparation method and its mould of high conductivity low-reflectivity metal grid - Google Patents
A kind of mould preparation method and its mould of high conductivity low-reflectivity metal grid Download PDFInfo
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- CN104571717B CN104571717B CN201510062816.1A CN201510062816A CN104571717B CN 104571717 B CN104571717 B CN 104571717B CN 201510062816 A CN201510062816 A CN 201510062816A CN 104571717 B CN104571717 B CN 104571717B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 92
- 239000002184 metal Substances 0.000 title claims abstract description 92
- 238000002310 reflectometry Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 91
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000001020 plasma etching Methods 0.000 claims abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
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- 101000938359 Homo sapiens Ectopic P granules protein 5 homolog Proteins 0.000 description 4
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Floor Finish (AREA)
- Push-Button Switches (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention provides a kind of mould preparation method of high conductivity low-reflectivity metal grid, using the processing technology for being coated with photoresist layer, impressing, electric paste etching, its photoresist layer thickness is 20 ~ 60 microns, photoresist layer is that the different photoresist layer of two layers of etch-rate is formed by stacking, and the electric paste etching speed of the photoresist selected by the photoresist layer of upper strata is more than the electric paste etching speed of the photoresist selected by lower floor's photoresist layer；Plasma etching conditions are：Plasma-based power is 2000 ~ 3000W, and etching period is 2 ~ 30 minutes.The mould making method preparation technology of the present invention is simple, easily operated, and metal grill of the line width less than 40 microns can be prepared with it, also, wide at the top and narrow at the bottom with the metal grill of its preparation, has the dual good characteristic of high conductivity antiradar reflectivity concurrently.
Description
Technical field
The invention belongs to touch panel Material Field, especially a kind of mould system of high conductivity low-reflectivity metal grid
Preparation Method and its mould.
Background technology
The products such as following mobile terminal, wearable device, intelligent appliance, there is solid demand to touch panel, while with
That contact panel is in large size, low priceization, and traditional ito thin film cannot be used for flexible application, electric conductivity and light transmittance etc.
Essential problem such as is not easily overcome at the factor, and many panel vendors begin one's study ITO substitute, including nano-silver thread, wire netting one after another
The materials such as lattice, CNT and graphene.Wherein, metal grill is because with cost is minimum, electric conductivity is good characteristic,
Application in market is also the most extensive.
Existing metal grill（Metal Mesh）The preparation method of mould is：（1）It is thin that plastic cement is coated with over the transparent substrate
Film, then in conducting metal lattice of the upper surface of the plastic film printing with appropriate line width；（2）According to conducting metal grid
Pattern imprints to plastic film, is depressed at transparent base downwards, on plastic film formed metal grill groove, it is this on
Transparent base of the face with metal grill groove is metal grill mould.In use, as long as to metal grill groove
The low-resistance value metal materials such as interior plating full gold, silver, copper, aluminium, then plastic film is all peeled off, so that it may metal grill is made.Adopt
The theoretical lowest resistance value of metal grill made from the metal grill mould made from above-mentioned production technology can reach 0.1 ohm/
Square inch, moreover, with good electromagnetic interference shield effect.But the technological level that printing makes is limited to, also,
The width of metal grill groove carries out fuzzy control, the gold obtained by it by the circuit line line width and impressing dynamics printed completely
The metal grill groove belonged on grid mould is wider, i.e., corresponding metal grill line width is thicker so that obtained metal grill
Line width typically more than 50 microns（According to the physiological make-up of human eye, when line width is 41 ~ 72 microns, lines obscure；Work as line width
For less than 40 microns when, human eye is non-discernable）, metal grill groove is wider, and metal grill line width is thicker, the conduction of metal grill
Rate is higher, and still, the contact surface of metal grill and transparent base is also bigger, and its reflectivity is also higher, causes under high pixel
Unauspicious interference ripple is more obvious.The gold of pixel in Mo Rui interference exponential code product display screens, blooming piece and touch-control conduction
Metal patterns, in the horizontal and vertical directions, the pixel of rule alignment and the fine regular pattern eclipsed form slightly deviation of object, then
The interference wave pattern occurred, i.e., be can see in some corners on screen has fine rule to run out.
The content of the invention
The present invention is intended to provide a kind of mould preparation method and its mould of high conductivity low-reflectivity metal grid, the mould
Tool preparation method preparation technology is simple, easily operated, can prepare metal grill of the line width less than 40 microns with it, also, use
The metal grill that it is prepared is wide at the top and narrow at the bottom, has the dual good characteristic of high conductivity antiradar reflectivity concurrently.
A kind of mould preparation method of high conductivity low-reflectivity metal grid, comprises the following steps：
（1）Photoresist layer is coated with over the transparent substrate, and photoresist layer thickness is 20 ~ 60 microns, and photoresist layer is two layers of etch-rate
Different photoresist layers are formed by stacking；And the electric paste etching speed of the photoresist selected by the photoresist layer of upper strata is more than lower floor's photoresistance
The electric paste etching speed of photoresist selected by layer；
（2）Photoresist layer is imprinted with circuit pattern raised impression block using bottom, after extracting impression block,
Circuit pattern groove is formed in photoresist layer；
（3）Electric paste etching is carried out to the photoresist layer after impressing, exposes transparent base, wherein, plasma etching conditions are：Plasma-based
Power is 2000 ~ 3000W, and etching period is 2 ~ 30 minutes, forms metal grill groove wide at the top and narrow at the bottom over the transparent substrate, is made
Obtain metal grill mould.
In use, as long as plating the low-resistance value metal materials such as full gold, silver, copper, aluminium into metal grill groove, then
Using photoresistance stripper by photoresist layer dissolution, so that it may metal grill is made.
The present invention advantageous effects be：
（1）The present invention is not influenceed by printing level, can done using coating photoresist layer, impressing, the processing technology etched
Go out more fine circuit pattern groove；
（2）Because the photoresist layer of the present invention is formed by stacking for the different photoresist layer of two layers of etch-rate, and, upper strata photoresist layer
The electric paste etching speed of selected photoresist is more than the electric paste etching speed of the photoresist selected by lower floor's photoresist layer, makes
, when being etched using equal plasma etching conditions, wire netting cell wide at the top and narrow at the bottom, the bottom of the wire netting cell can be made
Portion's narrow width, the opening position line width contacted with transparent base of obtained metal grill, its reflectivity can be reduced as far as possible, avoided
There is unauspicious interference ripple；The A/F of wire netting cell is wide, the region line of the remote transparent base of obtained metal grill
It is wide larger, higher conductance can be maintained as far as possible again；
（3）The present invention to resistive layer thickness and plasma etching conditions by being defined so that, the metal grill obtained
Recess width is controlled in appropriate level, and when preparing metal grill with it, the average line width of metal grill obtained is positively retained at 7
~ 20 microns, line width boundary -40 micron identified well below human eye；
（4）The metal grill mold making process of the present invention is simple, easily operated and product quality is controlled, and not
Easily there is the problem of metal grill broken string.
According to metal grill mould made from the mould preparation method of above-mentioned high conductivity low-reflectivity metal grid, bag
Transparent base is included, photoresist layer is laid on transparent base, photoresist layer is that the different photoresist layer of two layers of etch-rate is formed by stacking；And
Upper strata photoresist layer is high electric paste etching rate resistor layer, and lower floor's photoresist layer is low electric paste etching rate resistor layer, is opened on resistive layer
Provided with circuit grid groove, the bottom of circuit grid groove extends to the upper surface of transparent base, in circuit grid groove under width
It is narrow.It is prepared by the metal grill that such metal grill mould is applied to all low resistive metals such as gold, silver, copper, aluminium；Also, institute
Obtained metal grill, its position contacted with transparent base, line width, its reflectivity can be reduced as far as possible, avoid the occurrence of Mo Rui
Interference ripple；Meanwhile in the region away from transparent base, line width is larger, can maintain higher conductance as far as possible again, be especially suitable for
Applied to large touch panel.
The mould preparation method of the high conductivity low-reflectivity metal grid of the present invention can also do following improvement：
（1）The etch-rate of upper strata photoresist layer needs to meet following condition with the etch-rate of lower floor's photoresist layer：Upper and lower layer
The difference of the etch-rate of photoresist layer is 15 ~ 43% with the percentage of lower floor's photoresist layer etch-rate value.So, can both avoid,
The difference of the etch-rate of lower floor's photoresist layer is too small, because groove opening wide at the top and narrow at the bottom is too small, groove is integrally too narrow, easily leads
There is the uneven phenomenon of filler during the metallic mesh material for causing to be subsequently stuffed into groove so that can go out on obtained metal grill
Existing hole, has a strong impact on product quality；It can avoid the difference of the etch-rate of upper and lower layer photoresist layer too big again, then easily occur
The phenomenon that upper strata photoresistance is all etched, cause gash depth insufficient, or opening is too big, metal grid lines are wider than greatly,
In the purposes of touch-screen, easy extraneous ray of reflecting in the sun is caused so that user is not easy to see that screen shows
The pattern shown.
（2）Wherein the step of（2）For：It is dynamic using impressing is carried out to photoresist layer with the raised impression block of circuit pattern
Make, until the distance between impression block and transparent base are 50 ~ 300 nanometers, stop impressing, and extract impression block, in light
Circuit pattern groove is formed in resistance layer；Other steps are constant.Such design, avoids impression block from being directly depressed at transparent base
When, wear damage can be caused to the circuit pattern projection of transparent base or impression block bottom in moulding process；
（3）Transparent base is preferably using simple glass, PET（PET）、PC（Makrolon）、PMMA
（Polymethyl methacrylate, it is commonly called as " lucite "）, the transparent base of these materials is the material of excellent in optical properties, more
Suitable for large touch panel.
Metal grill mould made from the mould preparation method of the high conductivity low-reflectivity metal grid of the present invention, can enter
One step is improved：The both sides sideline of metal grill groove cross section is non-rectilinear.Metal grill obtained by such a mould with
The position of transparent base contact, line width is narrower, and reflectivity is lower, it is ensured that is not in unauspicious interference ripple；Meanwhile away from thoroughly
The region of bright base material, line width is bigger, can maintain higher conductance.
Brief description of the drawings
Fig. 1 is that transparency carrier is coated with the structure chart after photoresist layer in embodiment 1 ~ 6；
Fig. 2 is the work structuring figure for carrying out photoresist layer impressing in embodiment 1 ~ 6 on transparency carrier, wherein, the direction of arrow is
The moving direction of impression block at that time；
Fig. 3 is the sectional view of metal grill mould obtained in embodiment 1 ~ 6；
Fig. 4 is the step after the improvement according to the present invention（2）The work that photoresist layer is imprinted on obtained transparency carrier
Structure chart, wherein, the direction of arrow is the moving direction of impression block at that time；
Fig. 5 is the sectional view using metal grill made from the metal grill mould of the present invention.
Embodiment
Embodiments of the present invention are illustrated in conjunction with accompanying drawing：
A kind of mould preparation method of high conductivity low-reflectivity metal grid, comprises the following steps：
（1）Photoresist layer is coated with transparent base 3（1、2）, photoresist layer thickness is 20 ~ 60 microns, and photoresist layer is two layers of erosion
The different photoresist layer of etching speed is formed by stacking（As shown in Fig. 1 ~ 3）；And the plasma-based of the photoresist selected by upper strata photoresist layer 1
Etch-rate is more than the electric paste etching speed of the photoresist selected by lower floor's photoresist layer 2；
（2）Using bottom with the raised impression block 4 of circuit pattern to photoresist layer（1、2）Imprinted, extract impressing
After template 4, in photoresist layer（1、2）Interior formation circuit pattern groove 5（As shown in Figure 2）；
（3）To the photoresist layer after impressing（1、2）Electric paste etching is carried out, exposes transparent base 3, wherein, plasma etching conditions
For：Plasma-based power is 2000 ~ 3000 watts, and etching period is 2 ~ 30 minutes, and wire netting wide at the top and narrow at the bottom is formed on transparent base 3
Lattice groove 6, metal grill mould is made（As shown in Figure 3）.
In use, as long as plating the low-resistance value metal materials such as full gold, silver, copper, aluminium into metal grill groove 6,
Photoresistance stripper is used again by photoresist layer（1、2）Dissolution, so that it may metal grill 7 is made（As shown in Figure 5）.
According to metal grill mould made from the mould preparation method of above-mentioned high conductivity low-reflectivity metal grid, bag
Transparent base 3 is included, photoresist layer is laid on transparent base 3（1、2）, photoresist layer（1、2）For the different photoresist layer of two layers of etch-rate
It is formed by stacking；And upper strata photoresist layer 1 is high electric paste etching rate resistor layer, lower floor's photoresist layer 2 is low electric paste etching rate resistor
Layer, resistive layer（1、2）On offer circuit grid groove 6, the bottom of circuit grid groove 6 extends to the upper table of transparent base 1
Face, circuit grid groove 6 are wide at the top and narrow at the bottom（As shown in Figure 3）.It is all that such metal grill mould is applied to gold, silver, copper, aluminium etc.
It is prepared by the metal grill of low resistive metal；Also, obtained metal grill 7, its position contacted with transparent base 3, line width
It is narrow, its reflectivity can be reduced as far as possible, avoid the occurrence of unauspicious interference ripple；Meanwhile away from transparent base 3 region, line width compared with
Greatly, higher conductance can be maintained as far as possible again, be particularly suitable for application to large touch panel.
According to the mould preparation method of above-mentioned high conductivity low-reflectivity metal grid, the applicant has intercepted 7 groups of realities
Number of cases evidence is applied, it is specific as follows：
Table 1
| It is real Apply Example | Upper strata Photoresistance Layer | Lower floor Photoresistance Layer | （The etch-rate of upper strata photoresist layer-lower floor's light The etch-rate of resistance layer）/ lower floor photoresist layer The percentage value of etch-rate（%） | Photoresistance Thickness Degree（It is micro- Rice） | Plasma-based Power （Watt） | Plasma-based is lost Carve the time （Minute） | Metal grill Average line width （Micron） |
| 1 | EPG5 35 | EPI68 0 | 15 | 40 | 2000 ~ | 30 | 12 |
| 2 | EPG5 90 | EPI61 2 | 37 | 60 | 3000 | 2 | 7 |
| 3 | TR30 3 | TR310 | 43 | 20 | 2700 | 20 | 20 |
| 4 | EPG5 35 | EPI68 0 | 15 | 40 | 3500 | 30 | 42 |
| 5 | EPG5 35 | EPI68 0 | 15 | 40 | 2000 | 45 | 63 |
| 6 | SMS- PAC | SMS- F9Ca- PAC | 6 | 60 | 3000 | 2 | 14 |
| 7 | SMS- F9PG A-AN | SMS- F9CaG A-AN | 52 | 60 | 3000 | 2 | ＞ 70 |
Found during experiment：Metal grill template made from embodiment 1 ~ 6 is used equally for preparing gold wide at the top and narrow at the bottom
Belong to grid 7.But when the thickness of resistive layer is 20 ~ 60 microns, only when plasma-based power is at 2000 ~ 3000 watts, meanwhile, protect
When holding the electric paste etching time in the range of 2 ~ 30 minutes, the mean breadth of the metal grill obtained could be controlled micro- less than 40
Rice（Such as above-described embodiment 1 ~ 3）.And when plasma-based power is too high or during electric paste etching overlong time, the metal grill obtained
Width is all higher than 40 microns（Such as above-described embodiment 4,5）.Meanwhile during experiment, applicant have also found that：When plasma-based work(
Rate is too low or when the electric paste etching time is too short, the phenomenon that electric paste etching fails to penetrate resistive layer easily occurs, i.e., can not expose
Transparent base 3.In addition, work as（The etch-rate of the etch-rate of upper strata photoresist layer 1-lower floor's photoresist layer 2）/ lower floor photoresist layer 2
When the percentage value of etch-rate is 15 ~ 43%（Such as embodiment 1 ~ 5）, the high metal grill product of the uniformity can be obtained, still,
When（The etch-rate of the etch-rate of upper strata photoresist layer 1-lower floor's photoresist layer 2）The percentage value of the etch-rate of/lower floor photoresist layer 2
During less than 15%（Such as embodiment 6）, because metal grill groove 6 is open, too small, entirety is too narrow, easily causes to be subsequently stuffed into gold
There is the uneven phenomenon of filler when belonging to the metallic mesh material in grid groove 6 so that occur on obtained metal grill
Hole, have a strong impact on product quality；Meanwhile when（The etch-rate of the etch-rate of upper strata photoresist layer 1-lower floor's photoresist layer 2）/ under
When the percentage value of the etch-rate of layer photoresist layer 2 is more than 43%（Such as embodiment 7）, then upper strata photoresistance easily occurs and is all eclipsed
The phenomenon of falling is carved, causes the depth of metal grill groove 6 insufficient, or opening is too big, the line width of metal grill 7 is excessive, is touching
In the purposes of screen, easy extraneous ray of reflecting in the sun is caused so that user is not easy to see the figure shown by screen
Case.
Photoresistance stripper employed in the present invention is mainly with BDG（Double glucuronic acid bilirubin） / DMSO（Diformazan
Base sulfoxide） / NMP（1-METHYLPYRROLIDONE） / MEA（Monoethanolamine）Based on solvent.The present invention's carries circuit pattern
Raised impression block 4 refers to the common impression block 4 in this area, and the raised circuit pattern of common impression block 4 is horizontal stroke
The projection of rectangular cross-section.
Cleaning agent employed in the present invention is deionized water, acetone, isopropanol equal solvent.
A kind of mould preparation method of high conductivity low-reflectivity metal grid of the present invention can do following improvement：
（1）Wherein the step of（2）For：Using the impression block 4 with circuit pattern projection to photoresist layer（2、3）Pressed
Print acts, until the distance between impression block 4 and transparent base 3 are 50 ~ 300nm, stops impressing, and extracts impression block 4,
In photoresist layer（1、2）Interior formation circuit pattern groove 5（As shown in Figure 4）；Other steps are constant.Such design, avoid imprinting
, can be to transparent base 3 or the circuit pattern of the bottom of impression block 4 in moulding process when template 4 is directly depressed at transparent base 3
Projection causes wear damage；
（2）For transparent base 3 preferably using glass, PET, PC, PMMA, the transparent base 3 of these materials is optical property
Excellent material, is more suitable for large touch panel.
Metal grill mould made from the mould preparation method of the high conductivity low-reflectivity metal grid of the present invention, can enter
One step is improved：The both sides sideline 60 of the cross section of metal grill groove 6 is non-rectilinear.Metal grill obtained by such a mould
The position contacted with transparent base 3, line width is narrower, and reflectivity is lower, it is ensured that is not in unauspicious interference ripple；Meanwhile remote
From the region of transparent base 3, line width is bigger, can maintain higher conductance.
In specific implementation process, during electric paste etching is carried out to photoresist layer, plasma-based can be also adjusted as needed
Power curve changes, so as to which different metal grill 7 be made（Such as class is trapezoidal, triangle, arc etc.）.
Claims (6)
1. a kind of mould preparation method of high conductivity low-reflectivity metal grid, comprises the following steps：
（1）Photoresist layer is coated with over the transparent substrate, and photoresist layer thickness is 20 ~ 60 microns, and photoresist layer is that two layers of etch-rate is different
Photoresist layer be formed by stacking；And the electric paste etching speed of the photoresist selected by the photoresist layer of upper strata is more than photoresist layer institute of lower floor
The electric paste etching speed of the photoresist of selection；
（2）Photoresist layer is imprinted with circuit pattern raised impression block using bottom, after extracting impression block, in light
Circuit pattern groove is formed in resistance layer；
（3）Electric paste etching is carried out to the photoresist layer after impressing, exposes transparent base, wherein, plasma etching conditions are：Plasma-based power
For 2000 ~ 3000W, etching period is 2 ~ 30 minutes, forms metal grill groove wide at the top and narrow at the bottom over the transparent substrate, and gold is made
Belong to grid mould.
2. a kind of mould preparation method of high conductivity low-reflectivity metal grid according to claim 1, its feature exist
In：The difference of the etch-rate of upper and lower layer photoresist layer is 15 ~ 43% with the percentage of lower floor's photoresist layer etch-rate value.
3. a kind of mould preparation method of high conductivity low-reflectivity metal grid according to claim 1, its feature exist
In step（2）For：Imprinting actions are carried out to photoresist layer using with circuit pattern raised impression block, until impression block
The distance between transparent base is 50 ~ 300 nanometers, stops impressing, and extracts impression block, and circuit diagram is formed in photoresist layer
Case groove.
4. a kind of mould preparation method of high conductivity low-reflectivity metal grid according to claim 1, its feature exist
In：Transparent base uses simple glass or PET or PC or PMMA.
5. a kind of high conductivity low-reflectivity metal grid mould, its mould preparation method system according to claim 1
, it includes transparent base, it is characterised in that：Photoresist layer is laid on transparent base, photoresist layer is that two layers of etch-rate is different
Photoresist layer is formed by stacking；And upper strata photoresist layer is high electric paste etching rate resistor layer, lower floor's photoresist layer is low electric paste etching speed
Resistive layer, circuit grid groove is offered on resistive layer, the bottom of circuit grid groove extends to the upper surface of transparent base, electricity
Road grid groove is wide at the top and narrow at the bottom.
A kind of 6. high conductivity low-reflectivity metal grid mould according to claim 5, it is characterised in that：Metal grill
The both sides sideline of groove cross section is non-rectilinear.
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| CN103456390A (en) * | 2013-02-05 | 2013-12-18 | 南昌欧菲光科技有限公司 | Conducting film and manufacturing method thereof |
| CN103913947A (en) * | 2014-04-24 | 2014-07-09 | 上海和辉光电有限公司 | Lithography forming method capable of simplifying array manufacturing procedure process |
| JP2014150118A (en) * | 2013-01-31 | 2014-08-21 | Dainippon Printing Co Ltd | Electrode film, method for producing the same, and image display device |
| TW201501920A (en) * | 2013-03-26 | 2015-01-16 | Kaneka Corp | Conductive film substrate, transparent conductive film, method for producing transparent conductive film, and touch panel |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014150118A (en) * | 2013-01-31 | 2014-08-21 | Dainippon Printing Co Ltd | Electrode film, method for producing the same, and image display device |
| CN103456390A (en) * | 2013-02-05 | 2013-12-18 | 南昌欧菲光科技有限公司 | Conducting film and manufacturing method thereof |
| TW201501920A (en) * | 2013-03-26 | 2015-01-16 | Kaneka Corp | Conductive film substrate, transparent conductive film, method for producing transparent conductive film, and touch panel |
| CN103913947A (en) * | 2014-04-24 | 2014-07-09 | 上海和辉光电有限公司 | Lithography forming method capable of simplifying array manufacturing procedure process |
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Application publication date: 20150429 Assignee: FUJIAN NORCY NEW MATERIAL TECHNOLOGY Co.,Ltd. Assignor: FUJIAN NORCY SCIENCE PARK DEVELOPMENT CO.,LTD. Contract record no.: X2019980000594 Denomination of invention: Mould fabricating method of high-conductivity and low-reflectivity metal mesh and mould thereof Granted publication date: 20180126 License type: Common License Record date: 20191113 |
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