CN104570620A - Wide light beam scanning exposure method - Google Patents
Wide light beam scanning exposure method Download PDFInfo
- Publication number
- CN104570620A CN104570620A CN201510013442.4A CN201510013442A CN104570620A CN 104570620 A CN104570620 A CN 104570620A CN 201510013442 A CN201510013442 A CN 201510013442A CN 104570620 A CN104570620 A CN 104570620A
- Authority
- CN
- China
- Prior art keywords
- area
- substrate
- exposure
- sub
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Holo Graphy (AREA)
Abstract
The invention relates to a wide light beam scanning exposure method which comprises the following steps: setting a double-beam exposure system, taking the direction along the grating vector in the double-beam exposure system as the x direction, taking the direction along the grating line as the y direction, and taking the direction along the substrate normal as the z direction; exposing a process edge with the area of A*d on the right edge of the substrate by utilizing an interference field formed on the surface of the substrate, pushing the process edge into a first attenuation wedge and a second attenuation wedge, and forming latent image stripes with the area of A*d on the process edge; performing t-time static exposure on an area with the area of A*3d on the left side of the process edge, and performing linear exposure on an area with the area of A*d positioned on the left side of the area with the area of A*3d; forming latent image stripes with the area of A*3d by virtue of the first and second latent image stripes; and sequentially performing scanning exposure on total areas on the left side of the latent image stripes with the area of A*3d by utilizing light beams with the width of d until the left edge of the substrate leaves the right edge of the exposure beams, and ending the scanning exposure process.
Description
Technical field
The present invention relates to a kind of scanning exposure method, particularly about a kind of angle pencil of ray scanning exposure method.
Background technology
Diffraction grating, as the typical diffraction optical element of one, is widely used in the fields such as spectral analysis, delicate metering, integrated optics, information processing and Laser pulse compression.At present, the manufacture method of large scale holographic grating mainly contains the methods such as single exposure, scan exposure and exposure splicing.Fringe locking in exposure process is very crucial.Double-beam holographic exposure method is the method for the most general making holographic grating.
Lawrence Livermore National Laboratory of the U.S. utilizes bore to reach the exposure lens of 1.09m, and it is 910 × 450mm that single exposure produces area
2grating.The advantage of single exposure is that technology maturation, system are simple, shortcoming is that area of raster and quality all depend on exposure lens, make the large grating of high-quality to need to use bigbore aspheric mirror, cost is very high, particularly makes bore still unrealistic at present significantly more than the aspheric mirror of meter level.Scanning exposure method be adopt bore only about 1mm light pencil formed interference fringe, to motion substrate carry out shuttle-scanning along grid line direction, to manufacture large-area grating region.It is 910 × 420mm that Plymouh Grating Laboratory company of the current U.S. adopts scanning exposure method to produce area
2grating.The advantage of scanning exposure method is that light pencil exposure interference field quality is good, and do not limit raster size, shortcoming is the fringe locking that use double-frequency laser interference signal carries out in scanning process, causes system very complicated to the precise hard_drawn tuhes of scanning system.Exposure splicing based on sub-image is a kind of method of regional exposure.Exposure splicing is after carrying out single exposure with less exposure area, grating is moved to next position, according to the interference fringe that sub-image grating (the low-down grating of diffraction efficiency that photoresist refractive index obtains after being exposed light field modulation) is formed in exposure light field, regulate position phase and the attitude of double exposure, then expose next time.The advantage of exposure joining method is that system is relatively simple, the complete self-reference of locking means, and splicing precision is high; Shortcoming is that stitching portion exists seam.
Grating parasitic light is the important technology index evaluating grating quality.Parasitic light is from grating flute profile error, roughness and pitch error etc.Reduce grating parasitic light the detection limit improving spectrometer is had great significance.Although above three kinds of preparing grating methods likely reduce by optical path adjusting the parasitic light that pitch error introduces, the existence of laser speckle make the flute profile of high frequency and roughness error inevitable.
Summary of the invention
For the problems referred to above, the object of this invention is to provide a kind of angle pencil of ray scanning exposure method that can manufacture large scale or low stray light holographic grating.
For achieving the above object, the present invention takes following technical scheme: a kind of angle pencil of ray scanning exposure method, it comprises the following steps: 1) arrange a pair of beam exposure system, it comprises laser instrument, spectroscope, first to the 3rd catoptron, the first to the second microcobjective, the first to the second pin hole, the substrate of the first to the second collimation lens and coating photoresist, the light beam that laser instrument sends is divided into two bundles through spectroscope, light beam enters in the first microcobjective after the first catoptron reflection, the first pin hole is entered after the first microcobjective focuses on, the first collimation lens is entered after the first pinhole filter, the first parallel beam is become after the first collimation lens collimation, second bundle light enters the second microcobjective successively after the reflection of second, third catoptron, enters the second pin hole, enter the second collimation lens after the second pinhole filter after the second microcobjective focuses on, after the second collimation lens collimation, become the second parallel beam, first, second parallel beam forms interference field at the substrate surface of coating photoresist, using in described twin-beam exposure system along grating vector direction as x direction, along grating grid direction as y direction, along substrate normal direction as z direction, 2) utilize the interference field that light trap restricting substrate surface is formed, and reserve at substrate right hand edge the rectangular area that area is A × d, the bore of first, second collimation lens is set to D, the light beam utilizing width d to be D/10 ~ D/5 exposes the rectangular area that substrate right hand edge area is A × d, time shutter is t, and obtaining an area is the technique edges of A × d, now technique edges just obtains sub-image grating, 3) light path between the first collimation lens and substrate pushes the first decay wedge, the part on the first parallel beam is irradiated to technique edges that area is A × d is by complete attenuation, light path between the second collimation lens and substrate pushes the second decay wedge, make the second parallel beam be irradiated to part on technique edges by complete attenuation, at area be A × d technique edges on form the sub-image striped that area is A × d, in the second parallel beam side, one detector is set, second decay wedge by area be the sub-image streak reflex of A × d on detector, the sub-image striped that detector receives is for fringe locking, 4) light trap is moved along-x direction relative to substrate, substrate reserves on the left of technique edges the rectangular area that area is A × 4d, substrate transfixion, carries out t Time Exposure to the region that area on the left of technique edges is A × 3d, be that linear exposure is carried out in the region of A × d to be positioned at area be area on the left of A × 3d region, in the process that the region to area on the left of technique edges being A × 4d exposes, utilize detector detection steps 3) in area be A × d sub-image striped on phase change, light path between the first catoptron and the first microcobjective sets up first sound-optic modulator, light path between the 3rd catoptron and the second microcobjective sets up second sound-optic modulator, first sound-optic modulator is modulated the first light beam, second sound-optic modulator is modulated the second light beam, make to produce phasic difference between the first light beam after modulating and the second light beam, utilize phasic difference to compensate the phase change that detector detects, make area be A × d sub-image striped keep motionless, 5) continue to push first, second decay wedge along-x direction relative to substrate, make to be irradiated to area be the light beam of the stationary exposure field of A × 3d by complete attenuation, form the sub-image striped that area is A × 3d, the light beam utilizing width to be d carries out scan exposure successively to the Zone Full on the left of the area sub-image striped that is A × 3d, and in scan exposure process, substrate at the uniform velocity moves along+x direction with speed v, in scan exposure process, the change of striped phase change on the sub-image striped utilizing detector detection area to be A × 3d, fringe spacing and fringe inclination change, for striped phase change, the phasic difference produced between first, second light beam by first sound-optic modulator and second sound-optic modulator is compensated, for fringe spacing change, compensate by adjusting the first pin hole position in the y-direction, for fringe inclination change, compensated by the position adjusting the first pin hole vertical first beam direction in xz plane, by above-mentioned three kinds of compensation, make area be that the sub-image striped of A × 3d keeps motionless in scan exposure process, 6) keep step 5) in area be the sub-image fringe locking of A × 3d, until substrate left hand edge leaves the right hand edge of exposing light beam, whole scan exposure process terminates, take off substrate, development obtains relief grating.
Described step 2) in, area be the sub-image grating of A × d with being placed on below substrate or the reference grating of side replaces, and replace step 5 by with reference to the locking of interference fringe that grating produces) in use sub-image fringe locking.
Described step 3) in, detector adopts the one in photomultiplier and electron multiplying charge coupled apparatus.
Described step 4) in, be that linear exposure is carried out in the region of A × d to be positioned at area be area on the left of A × 3d region, its detailed process is: block a baffle plate at the overlying regions of area to be area on the left of A × 3d region be A × d, the light beam of this overlying regions blocks by baffle plate completely; After starting exposure, baffle plate is at the uniform velocity pulled open along-x direction relative to substrate with the speed of v=d/t, make area be that the region of A × d is exposed, and linearly changes the time shutter in the x-direction, this area is the time shutter of the region right-hand member of A × d is t, and the time shutter of left end is 0.
The present invention is owing to taking above technical scheme, it has the following advantages: 1, the present invention due to first adopt width be collimation aperture of lens 1/10 ~ 1/5 light beam substrate side exposure obtain a technique edges, by setting up decay wedge in the twin-beam exposure system arranged, technique edges forms sub-image striped; Secondly in the twin-beam exposure system arranged, set up detector and acousto-optic modulator, the change on the sub-image striped detect detector, is compensated by acousto-optic modulator, makes sub-image striped keep motionless; Then, exposing light beam is adopted to carry out stationary exposure to the region that area on the left of technique edges is A × 3d, be that linear exposure is carried out in the region of A × d to being positioned at area on the left of region that area is A × 3d, the stationary exposure field utilizing decay wedge to make area be A × 3d produces sub-image striped; Finally, the sub-image striped amassed over there as A × 3d enters on line-locked basis, to area be A × 3d region on the left of Zone Full carry out scan exposure, the length of scanning substrate, by the restriction of collimation lens bore, therefore adopts the present invention can produce large scale holographic grating.2, the present invention is that the light beam collimating aperture of lens 1/10 ~ 1/5 carries out scan exposure along grating vector to substrate owing to adopting width, therefore the present invention can overcome the seam problems that existing exposure joining method exists, and does not also need the heavy caliber aspherical mirror suitable with area of raster.3, the present invention is due to the position phase by locking sub-image grating interference strip or reference grating interference strip and attitude, can to eliminate the effects of the act the not parallel and screen periods error of the scanning phase error of effect, grid line etc., therefore the present invention can realize the locking of grating position phase, grid line direction and screen periods, and locking system is simple, precision is higher, and do not need double frequency phase measurement complicated as scan exposure in prior art and fringe locking system.4, the present invention to make on substrate a point go through the irradiation of multiple point on exposing light beam due to angle pencil of ray scan exposure, the smoothing effect to micromechanism is realized on the one hand by the average effect of scanning, reduce the high frequency error even eliminated in exposing light beam, directly reduce parasitic light; In scanning process, substrate goes through identical exposure process along each point of grating vector on the other hand, can exposition uniformity be improved, reduce aberration, indirectly reduce parasitic light; Therefore the present invention can make the grating of low stray light.Based on above advantage, the present invention can be widely used in the making of large scale or low stray light holographic grating.
Accompanying drawing explanation
Fig. 1 is the light path schematic diagram in angle pencil of ray scanning exposure method of the present invention;
Fig. 2 is each step schematic diagram in angle pencil of ray scanning exposure method of the present invention; Wherein, shadow region represents for generation of sub-image striped.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
The principle of work of angle pencil of ray scanning exposure method of the present invention is: in the position phase of locking exposing light beam opposing substrate and the basis of attitude, with the wide light beam of collimation lens bore 1/10 to 1/5 along grating vector scan exposure.Can adjust width of light beam according to actual needs, arrow beam of light quality is good, but the time shutter needed is long; Angle pencil of ray quality relative mistake, but the time shutter needed is short.In exposure process, require that interference field and substrate strictly move (whole interference field is motionless, but translation is being done in the position of interference field) with identical speed and direction, otherwise the interference fringe recorded in the photoresist of substrate surface coating will be floating.When substrate is exposed by angle pencil of ray successively, the sub-image grating that the part that exposed produces or reference the grating being placed in (or side) below substrate are used for fringe locking, can while locking bit phase, grid line direction and screen periods.In scanning process, the exposure length along grating vector direction is unrestricted, and can not produce seam, and therefore angle pencil of ray scanning exposure method of the present invention is a kind of low cost, the method making large grating fast and effectively.Simultaneously, because angle pencil of ray scan exposure to make on substrate a point go through the irradiation of multiple point on exposing light beam, on average can fall the high frequency error in light beam, thus reduce grating flute profile error, roughness and pitch error, therefore angle pencil of ray scanning exposure method of the present invention can make the grating of low stray light.
Angle pencil of ray scanning exposure method of the present invention comprises the following steps:
1) as shown in Figure 1, a pair of beam exposure system is set, it comprises laser instrument 1, spectroscope 2, first catoptron 3, second catoptron 4, 3rd catoptron 5, first microcobjective 6, second microcobjective 7, first pin hole 8, second pin hole 9, first collimation lens 10, the substrate 12 of the second collimation lens 11 and coating photoresist, the light beam that laser instrument 1 sends is divided into two bundles through spectroscope 2, light beam enters in the first microcobjective 6 after the first catoptron 3 reflects, the first pin hole 8 is entered after the first microcobjective 6 focuses on, the first collimation lens 10 is entered after the first pin hole 8 filtering, the first parallel beam is become after the first collimation lens 10 collimates, second bundle light enters the second microcobjective 7 successively after the reflection of second, third catoptron 4,5, the second pin hole 9 is entered after the second microcobjective 7 focuses on, after the second pin hole 9 filtering, enter the second collimation lens 11, after the second collimation lens 11 collimates, become the second parallel beam, first, second parallel beam forms interference field on substrate 12 surface of coating photoresist.Wherein, using in this twin-beam exposure system along grating vector direction as x direction, along grating grid direction as y direction, along substrate normal direction as z direction.
2) as shown in Fig. 2 (a), utilize the interference field that light trap restricting substrate 12 surface is formed, and reserve at substrate 12 right hand edge the rectangular area that area is A × d; The bore of the first collimation lens 10 and the second collimation lens 11 is set to D, the light beam utilizing width d to be D/10 ~ D/5 exposes the rectangular area that substrate 12 right hand edge area is A × d, time shutter is t, obtaining an area is the technique edges of A × d, now technique edges just obtains the low-down sub-image grating of diffraction efficiency.
3) as shown in Fig. 1 and Fig. 2 (b), the light path between the first collimation lens 10 and substrate 12 pushes the first decay wedge 13, the part on the first parallel beam is irradiated to technique edges that area is A × d is by complete attenuation; Light path between the second collimation lens 11 and substrate 12 pushes the second decay wedge 14, make the second parallel beam be irradiated to part on technique edges by complete attenuation; Due to the existence of first, second decay wedge 13,14 angle of wedge, when the first parallel beam after decay and the second parallel beam shine on sub-image grating, 0 order diffraction light of sub-image grating pair first parallel beam and-1 order diffraction light of sub-image grating pair second parallel beam interfere, forming area is the horizontal interference fringe that the contrast of A × d and spacing are moderate, i.e. sub-image striped.Arrange a detector 15, second in the second parallel beam side and decay wedge 14 by sub-image streak reflex on detector 15, the area that detector 15 receives is that the sub-image striped of A × d is used for fringe locking.
4) as shown in Fig. 2 (b), light trap is moved along-x direction relative to substrate 12, on the left of technique edges, reserve the rectangular area that area is A × 4d on the substrate 12.Substrate 12 transfixion, carries out t Time Exposure to the region that area on the left of technique edges is A × 3d; Be that linear exposure is carried out in the region of A × d to be positioned at area be area on the left of A × 3d region.
When carrying out linear exposure, its detailed process is:
Block a baffle plate at the overlying regions of area to be area on the left of A × 3d region be A × d, the light beam of this overlying regions blocks by baffle plate completely.After starting exposure, baffle plate is at the uniform velocity pulled open along-x direction relative to substrate 12 with the speed of v=d/t, make area be that the region of A × d is exposed, and the time shutter linearly changes in the x-direction, wherein, the time shutter of this region right-hand member is t, and the time shutter of left end is 0.
In the process that the region to area on the left of technique edges being A × 4d exposes, utilize detector 15 detection steps 3) in area be A × d sub-image striped on put the light intensity of P1, i.e. phase change.As shown in Figure 1, light path between the first catoptron 3 and the first microcobjective 6 sets up first sound-optic modulator 16, light path between the 3rd catoptron 5 and the second microcobjective 7 sets up second sound-optic modulator 17, first sound-optic modulator 16 is modulated the first light beam, second sound-optic modulator 17 is modulated the second light beam, make to produce phasic difference between the first light beam after modulating and the second light beam, utilize phasic difference to compensate the phase change that detector 15 detects, make area be A × d sub-image striped keep motionless.
5) as shown in Fig. 2 (c), continue to push first, second decay wedge 13,14 along-x direction relative to substrate 12, make to be irradiated to area be the light beam of the stationary exposure field of A × 3d by complete attenuation, form the sub-image striped that area is A × 3d.Make substrate 12 at the uniform velocity move along+x direction with speed v, the light beam utilizing width to be d carries out scan exposure successively to the Zone Full on the left of the area sub-image striped that is A × 3d, namely starts scan exposure process.
In this scan exposure process, detector 15 detection area be A × 3d sub-image striped on put P2, some P3 and some P4 light intensity.Light intensity for a P2 changes, i.e. striped phase change, and the phasic difference produced between first, second light beam by first sound-optic modulator 16 and second sound-optic modulator 17 is compensated.Change relative to the light intensity of a P2 for a P3, i.e. fringe spacing change, compensates by adjusting the first pin hole 8 position in the y-direction.Change relative to the light intensity of a P2 for a P4, i.e. fringe inclination change, is compensated by the position adjusting the first pin hole 8 vertical first beam direction in xz plane.By above-mentioned three kinds of compensation, area is made to be that the sub-image striped of A × 3d keeps motionless in scan exposure process.
6) as shown in Fig. 2 (d), keep step 5) in area be the sub-image fringe locking of A × 3d, until substrate 12 left hand edge leaves the right hand edge of scanning light beam, whole scan exposure process terminates.Take off substrate 12, development obtains relief grating.
Above-mentioned steps 3) in, detector 15 can adopt photomultiplier or EMCCD (Electron-MultiplyingCCD, electron multiplying charge coupled apparatus).
Above-mentioned steps 3) in, can with being placed on below substrate 12 or the reference grating of side replaces area to be the sub-image grating of A × d, the method of the manufacture grating that angle pencil of ray scanning exposure method of the present invention is introduced is still effective, only need dispense the step 2 in above-mentioned steps), step 3) and step 4), step 5) the middle locking of interference fringe changing the generation of use reference grating with sub-image fringe locking into, and scan exposure is carried out to substrate 12.Now, although will limit the length of made grating with reference to the length of grating, scanning is still set up the elimination of grating parasitic light, can separately as a kind of method making low stray light grating.
The various embodiments described above are only for illustration of the present invention; wherein the structure of each parts, connected mode and method step etc. all can change to some extent; every equivalents of carrying out on the basis of technical solution of the present invention and improvement, all should not get rid of outside protection scope of the present invention.
Claims (4)
1. an angle pencil of ray scanning exposure method, it comprises the following steps:
1) a pair of beam exposure system is set, it comprises the substrate of laser instrument, spectroscope, the first to the 3rd catoptron, the first to the second microcobjective, the first to the second pin hole, the first to the second collimation lens and coating photoresist, the light beam that laser instrument sends is divided into two bundles through spectroscope, light beam enters in the first microcobjective after the first catoptron reflection, the first pin hole is entered after the first microcobjective focuses on, after the first pinhole filter, enter the first collimation lens, after the first collimation lens collimation, become the first parallel beam; Second bundle light enters the second microcobjective successively after the reflection of second, third catoptron, enters the second pin hole, enter the second collimation lens after the second pinhole filter after the second microcobjective focuses on, after the second collimation lens collimation, become the second parallel beam; First, second parallel beam forms interference field at the substrate surface of coating photoresist; Using in described twin-beam exposure system along grating vector direction as x direction, along grating grid direction as y direction, along substrate normal direction as z direction;
2) utilize the interference field that light trap restricting substrate surface is formed, and reserve at substrate right hand edge the rectangular area that area is A × d; The bore of first, second collimation lens is set to D, the light beam utilizing width d to be D/10 ~ D/5 exposes the rectangular area that substrate right hand edge area is A × d, time shutter is t, and obtaining an area is the technique edges of A × d, now technique edges just obtains sub-image grating;
3) light path between the first collimation lens and substrate pushes the first decay wedge, the part on the first parallel beam is irradiated to technique edges that area is A × d is by complete attenuation; Light path between the second collimation lens and substrate pushes the second decay wedge, make the second parallel beam be irradiated to part on technique edges by complete attenuation; At area be A × d technique edges on form the sub-image striped that area is A × d;
In the second parallel beam side, one detector is set, second decay wedge by area be the sub-image streak reflex of A × d on detector, the sub-image striped that detector receives is for fringe locking;
4) light trap is moved along-x direction relative to substrate, substrate reserves on the left of technique edges the rectangular area that area is A × 4d; Substrate transfixion, carries out t Time Exposure to the region that area on the left of technique edges is A × 3d; Be that linear exposure is carried out in the region of A × d to be positioned at area be area on the left of A × 3d region;
In the process that the region to area on the left of technique edges being A × 4d exposes, utilize detector detection steps 3) in area be A × d sub-image striped on phase change; Light path between the first catoptron and the first microcobjective sets up first sound-optic modulator, light path between the 3rd catoptron and the second microcobjective sets up second sound-optic modulator, first sound-optic modulator is modulated the first light beam, second sound-optic modulator is modulated the second light beam, make to produce phasic difference between the first light beam after modulating and the second light beam, utilize phasic difference to compensate the phase change that detector detects, make area be A × d sub-image striped keep motionless;
5) continue to push first, second decay wedge along-x direction relative to substrate, make to be irradiated to area be the light beam of the stationary exposure field of A × 3d by complete attenuation, form the sub-image striped that area is A × 3d;
The light beam utilizing width to be d carries out scan exposure successively to the Zone Full on the left of the area sub-image striped that is A × 3d, and in scan exposure process, substrate at the uniform velocity moves along+x direction with speed v;
In scan exposure process, the change of striped phase change on the sub-image striped utilizing detector detection area to be A × 3d, fringe spacing and fringe inclination change, for striped phase change, the phasic difference produced between first, second light beam by first sound-optic modulator and second sound-optic modulator is compensated; For fringe spacing change, compensate by adjusting the first pin hole position in the y-direction; For fringe inclination change, compensated by the position adjusting the first pin hole vertical first beam direction in xz plane, by above-mentioned three kinds of compensation, make area be that the sub-image striped of A × 3d keeps motionless in scan exposure process;
6) keep step 5) in area be the sub-image fringe locking of A × 3d, until substrate left hand edge leaves the right hand edge of exposing light beam, whole scan exposure process terminates; Take off substrate, development obtains relief grating.
2. a kind of angle pencil of ray scanning exposure method as claimed in claim 1, it is characterized in that: described step 2) in, area be the sub-image grating of A × d with being placed on below substrate or the reference grating of side replaces, and replace step 5 by with reference to the locking of interference fringe that grating produces) in use sub-image fringe locking.
3. a kind of angle pencil of ray scanning exposure method as claimed in claim 1, is characterized in that: described step 3) in, detector adopts the one in photomultiplier and electron multiplying charge coupled apparatus.
4. a kind of angle pencil of ray scanning exposure method as described in claim 1 or 2 or 3, it is characterized in that: described step 4) in, be that linear exposure is carried out in the region of A × d to be positioned at area be area on the left of A × 3d region, its detailed process is: block a baffle plate at the overlying regions of area to be area on the left of A × 3d region be A × d, the light beam of this overlying regions blocks by baffle plate completely; After starting exposure, baffle plate is at the uniform velocity pulled open along-x direction relative to substrate with the speed of v=d/t, make area be that the region of A × d is exposed, and linearly changes the time shutter in the x-direction, this area is the time shutter of the region right-hand member of A × d is t, and the time shutter of left end is 0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510013442.4A CN104570620B (en) | 2015-01-12 | 2015-01-12 | A kind of angle pencil of ray scanning exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510013442.4A CN104570620B (en) | 2015-01-12 | 2015-01-12 | A kind of angle pencil of ray scanning exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104570620A true CN104570620A (en) | 2015-04-29 |
| CN104570620B CN104570620B (en) | 2016-09-21 |
Family
ID=53087040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510013442.4A Active CN104570620B (en) | 2015-01-12 | 2015-01-12 | A kind of angle pencil of ray scanning exposure method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104570620B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318954A (en) * | 2018-04-09 | 2018-07-24 | 苏州大学 | It is a kind of to make a meter system and method for magnitude grating |
| CN109870754A (en) * | 2019-03-25 | 2019-06-11 | 中国科学院长春光学精密机械与物理研究所 | A kind of two-dimensional surface holographic grating exposure device |
| CN110007385A (en) * | 2019-05-21 | 2019-07-12 | 清华大学 | For making the holographic exposure system and method for grating |
| CN111065968A (en) * | 2018-05-22 | 2020-04-24 | 苏州大学 | Holographic grating photoetching system and adjusting method for self-collimation of interference light path thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6882477B1 (en) * | 1999-11-10 | 2005-04-19 | Massachusetts Institute Of Technology | Method and system for interference lithography utilizing phase-locked scanning beams |
| CN101726778A (en) * | 2009-11-05 | 2010-06-09 | 中国科学院长春光学精密机械与物理研究所 | Double-light beam positioning method of grating substrate in manufacture of concave holographic grating |
| CN102017064A (en) * | 2008-03-27 | 2011-04-13 | 康宁股份有限公司 | Semiconductor buried grating fabrication method |
-
2015
- 2015-01-12 CN CN201510013442.4A patent/CN104570620B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6882477B1 (en) * | 1999-11-10 | 2005-04-19 | Massachusetts Institute Of Technology | Method and system for interference lithography utilizing phase-locked scanning beams |
| CN102017064A (en) * | 2008-03-27 | 2011-04-13 | 康宁股份有限公司 | Semiconductor buried grating fabrication method |
| CN101726778A (en) * | 2009-11-05 | 2010-06-09 | 中国科学院长春光学精密机械与物理研究所 | Double-light beam positioning method of grating substrate in manufacture of concave holographic grating |
Non-Patent Citations (1)
| Title |
|---|
| 石磊: "大尺寸衍射光栅的制造：基于潜像的曝光拼接方法", 《中国博士学位论文全文数据库 信息科技辑》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318954A (en) * | 2018-04-09 | 2018-07-24 | 苏州大学 | It is a kind of to make a meter system and method for magnitude grating |
| CN108318954B (en) * | 2018-04-09 | 2019-12-27 | 苏州大学 | System and method for manufacturing meter-level grating |
| CN111065968A (en) * | 2018-05-22 | 2020-04-24 | 苏州大学 | Holographic grating photoetching system and adjusting method for self-collimation of interference light path thereof |
| CN111065968B (en) * | 2018-05-22 | 2022-02-08 | 苏州大学 | Holographic grating photoetching system and adjusting method for self-collimation of interference light path thereof |
| CN109870754A (en) * | 2019-03-25 | 2019-06-11 | 中国科学院长春光学精密机械与物理研究所 | A kind of two-dimensional surface holographic grating exposure device |
| CN110007385A (en) * | 2019-05-21 | 2019-07-12 | 清华大学 | For making the holographic exposure system and method for grating |
| CN110007385B (en) * | 2019-05-21 | 2020-08-11 | 清华大学 | Holographic exposure system and method for manufacturing grating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104570620B (en) | 2016-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9772407B2 (en) | Photonic-channeled X-ray detector array | |
| CN102564575B (en) | Laser far field focal spot measurement method based on orthogonal light wedge dichroism and focal spot reconstruction algorithm | |
| CN107894288B (en) | Method and system for measuring vortex beam topological charge under partial coherent light condition | |
| CN104570620A (en) | Wide light beam scanning exposure method | |
| JP7453981B2 (en) | Calibration of light field imaging systems | |
| CN107505121B (en) | The angle measuring device and method of electro-optic crystal light pass surface normal and the optical axis of crystal | |
| CN102155997B (en) | Optical-fiber type laser wavemeter | |
| CN102692394B (en) | Two-dimensional imaging method and device based on thermal lens effect | |
| CN106537104B (en) | Device and method for light beam characterization | |
| CN103592108A (en) | CCD chip modulation transfer function test device and method | |
| CN109374259A (en) | Holographic grating period high precision online measuring and regulating device | |
| CN105333815B (en) | A kind of super online interferometer measuration system of lateral resolution surface three dimension based on the scanning of spectrum colour loose wire | |
| CN105890529A (en) | Method for measuring filament diameter and device | |
| CN102494873A (en) | Method for measuring focal length of micro-lens array | |
| CN108318954B (en) | System and method for manufacturing meter-level grating | |
| CN110118762A (en) | Flame CH base is synchronous with NO molecule or selective excitation measuring device and method | |
| CN106768890B (en) | Gray scale cosine distribution optical target simulator for modulation transfer function detection | |
| CN108761602A (en) | The autocollimatic adjusting method of optical interference circuit in a kind of holographic grating lithography system | |
| CN104697454A (en) | Filament diameter measurement method and device based on double grating | |
| CN103018173A (en) | Structured light illumination chromatography microimaging system | |
| CN102607443B (en) | Point target image mosaic-based image sensor pixel pitch measurement method | |
| CN102607442B (en) | Method and device for measuring space of pixels of image sensor by using constant-speed movable point target | |
| CN109580182A (en) | Curved optical device refractive index measurement method and device based on Brewster's law | |
| CN113092073A (en) | Automatic measurement method for phase modulation characteristics of liquid crystal spatial light modulator | |
| CN104880913A (en) | Focusing-leveling system for increasing process adaptability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |