CN104569077A - Titanium dioxide film hydrogen sensor and preparation method thereof - Google Patents

Titanium dioxide film hydrogen sensor and preparation method thereof Download PDF

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CN104569077A
CN104569077A CN201510037452.1A CN201510037452A CN104569077A CN 104569077 A CN104569077 A CN 104569077A CN 201510037452 A CN201510037452 A CN 201510037452A CN 104569077 A CN104569077 A CN 104569077A
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hydrogen gas
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CN104569077B (en
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高云
吴文希
夏晓红
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Hubei University
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Abstract

The invention provides a titanium dioxide film hydrogen sensor and a preparation method thereof. The predeposited TiO2 seed crystal layer can isolate the FTO (fluorine-doped tin oxide) conducting layer and hydrothermal growth TiO2 layer, lower the drain current passing through the FTO conducting glass layer and enhance the detection sensitivity of the titanium dioxide film hydrogen sensor; the predeposited TiO2 seed crystal layer can be used as a buffer layer and seed crystal layer, provides a higher-density seed crystal layer for the next hydrothermal synthesis step of the TiO2 nano array film, and effectively increases the density of the film TiO2 nanorod array; and magnetron sputtering and hydrothermal synthesis are combined to enhance the grain orientation performance of the TiO2 nano array film, so that the finally prepared titanium dioxide film hydrogen sensor has excellent detection sensitivity and stability, and more importantly, can satisfy the requirements for hydrogen detection at 25+/-5 DEG C, and the method does not need any additional heating system and has the advantage of lower cost than other methods. The detection limit at 25+/-5 DEG C can reach 1 ppm, and the resistance change is up to 4% when a 1V voltage source is used as the drive.

Description

Titanium deoxid film hydrogen gas sensor and preparation method thereof
Technical field
The present invention relates to hydrogen gas sensor, particularly relate to a kind of titanium deoxid film hydrogen gas sensor and preparation method thereof.
Background technology
Hydrogen is as emerging important renewable sources of energy carrier and most important industrial gasses and special gas, have a wide range of applications in petrochemical complex, electronics industry, metallurgical industry, food processing, float glass, Minute Organic Synthesis, Aero-Space etc., but just very easily blast when the hydrogen content in air reaches 4%, this brings great potential safety hazard to the application of hydrogen and storage, therefore a kind of can Sensitive Detection hydrogen, stable performance and the sensor of cheapness become the active demand of current industrial circle.
At present, there is multiple gas sensor in market, mainly contained galvanochemistry type, semi-conductor type, electrothermic type, metal mold and optical type, wherein, TiO 2because its stable surface property and good hydrogen detection sensitivity and become one of most popular material in hydrogen gas sensor field, about TiO 2detect the mechanism of hydrogen, mainly comprise hydrogen at TiO 2adsorption and desorption process, in adsorption process, the electronics in hydrogen atom enters TiO 2conduction band, TiO 2surface charge accumulates, and resistance reduces; In the process of desorb, electric charge leaves, TiO 2surface recovery electric neutrality, resistance returns to initial value.
There is the problem of following several respects in existing Oxide Gas Sensors: first, working temperature point is high, generally reach optimum Working at 200-300 DEG C, research shows, high temperature can reduce the energy of activation that hydrogen adsorbs at sensor surface and resolves, be conducive to the raising of detection sensitivity, but also bring great potential safety hazard simultaneously, and add energy consumption; The second, need to improve to the low detection limit of hydrogen, have overwriting in pertinent literature, a kind of Rutile Type TiO 2film can reach 5ppm(Lu, C. when working temperature is 500 DEG C to the minimum detection limit of hydrogen; Chen, Z. High-temperature resistive hydrogen sensor based on thin nanoporous rutile TiO 2film on anodic aluminum oxide. Sens. Actuat. B 2009,140,109 – 115.), Mg doping ZnO can reach 5ppm to the detection limit of hydrogen, and the working temperature reaching this detection limit is reduced to 150 DEG C of (Liu, Y.; Hang, T.; Xie, Y.; Bao, Z.; Song, J.; Zhang, H.; Xie, E. Effect of Mg doping on the hydrogen-sensing characteristics of ZnO thin films. Sens. Actuat. B 2011,160,266 – 270.); 3rd, under duty, hydrogen gas sensor resistance variations is less.
Summary of the invention
In view of this, the object of the present invention is to provide one can work at 25 ± 5 DEG C, there is lower density of hydrogen detection limit and titanium deoxid film hydrogen gas sensor that under duty, resistance variations is larger and preparation method thereof.
One aspect of the present invention provides a kind of titanium deoxid film hydrogen gas sensor, and it comprises: FTO conductive glass layer, [002] orientation TiO of surface attachment successively 2inculating crystal layer, [002] orientation TiO 2nano-array thin layer and interdigital electrode.
Second aspect present invention provides a kind of preparation method of titanium deoxid film hydrogen gas sensor, and it comprises the following steps:
A., FTO conductive glass layer is provided, adopts the TiO of magnetically controlled sputter method pre-deposition one deck [002] orientation on FTO conductive glass layer surface 2inculating crystal layer;
B. hydro-thermal method is adopted, at described TiO 2seed crystal surface grows [002] oriented growth TiO 2nano-array thin layer;
C. at TiO 2nano-array thin-film surface arranges interdigital electrode.
The invention has the beneficial effects as follows: the present invention is by the TiO of pre-deposition 2inculating crystal layer, can completely cut off FTO conductive layer and hydrothermal growth TiO on the one hand 2layer, is decreased through the leakage current of FTO conductive glass layer, improves titanium deoxid film hydrogen gas sensor detection sensitivity; Second aspect, as cushion and inculating crystal layer, is next step Hydrothermal Synthesis TiO 2nano-array thin layer provides more highdensity inculating crystal layer, effectively increases film TiO 2the density of nanometer stick array; Magnetron sputtering, Hydrothermal Synthesis two kinds of preparation methods are combined, can improve TiO by the third aspect 2the grain orientation of nano-array thin layer, the titanium deoxid film hydrogen gas sensor finally prepared not only has excellent detection sensitivity and stability, the more important thing is and can meet the requirement detecting hydrogen at 25 ± 5 DEG C, without the need to extra heating system, cost is lower relative to additive method.At 25 ± 5 DEG C, detection limit can reach 1ppm, and adopt the voltage source of 1V to drive, its resistance variations is up to 4%.
Accompanying drawing explanation
Fig. 1 is the structural representation of the titanium deoxid film hydrogen gas sensor that embodiment one obtains;
Fig. 2 is the TiO that embodiment one obtains 2the scanning electron microscope (SEM) photograph of inculating crystal layer;
Fig. 3 is the TiO that embodiment one obtains 2the Raman spectrogram of inculating crystal layer;
Fig. 4 a and b be the TiO that obtains of corresponding embodiment one and embodiment three respectively 2the XRD figure of nano-array thin layer;
Fig. 5 a, c and b, d be the TiO that obtains of corresponding embodiment three and embodiment one respectively 2the SEM figure of nano-array thin layer;
The hydrogen gas performance plot of below the 100ppm that Fig. 6 a and b titanium deoxid film hydrogen gas sensor that corresponding embodiment one and embodiment two obtain respectively is measured at 25 ± 5 DEG C.
Embodiment
One aspect of the present invention provides a titanium deoxid film hydrogen gas sensor, and as Fig. 1, it comprises: FTO conductive glass layer 1, [002] orientation TiO of surface attachment successively 2inculating crystal layer 2, [002] orientation TiO 2nano-array thin layer 3 and interdigital electrode 4.
Described titanium deoxid film hydrogen gas sensor, its under 25 ± 5 DEG C of conditions to the detection Nong Du≤1ppm of hydrogen, its resistance Bianization Shuai≤4%.
The present invention provides a kind of preparation method of titanium deoxid film hydrogen gas sensor on the other hand, and it comprises the following steps:
A., FTO conductive glass layer 1 is provided, adopts the TiO of magnetically controlled sputter method pre-deposition one deck [002] orientation on FTO conductive glass layer 1 surface 2inculating crystal layer 2;
B. hydro-thermal method is adopted, at described TiO 2inculating crystal layer 2 superficial growth goes out TiO 2nano-array thin layer 3;
C. at TiO 2nano-array thin layer 3 surface arranges interdigital electrode 4.
Preferably, described step B also comprises, to TiO 2nano-array thin layer 3 is annealed under an inert atmosphere.Preferred further, described annealing temperature is 380-420 DEG C, and annealing time is 20-30min.Concrete, described inert atmosphere adopts Ar gas.By annealing, TiO can be optimized 2nano-array thin layer 3 interface performance, reduces the interface state density on surface, improves Electrical transport, improves the response speed of film.
Preferably, described steps A comprises the following steps:
A1: by Ti 2o 3target is installed on magnetic control sputtering system negative electrode target position, and the distance regulating target and substrate is 50-70mm;
A2: regulate radio frequency Ti 2o 3the power of target is 110-130W, continues sputtering sedimentation 5-30min;
A3: the sample 450-500 DEG C of annealing 5-10min under an inert atmosphere that steps A 2 is obtained.
Preferably, the preparation method of described titanium deoxid film hydrogen gas sensor, is characterized in that: described step B comprises:
B1: configure the solution be made up of according to following percent by volume water, ethanol, hydrochloric acid, tetra-n-butyl titanate:
Water: 23%-27%
Ethanol: 24-25%;
Hydrochloric acid: 48-50%
Tetra-n-butyl titanate: 1-2%;
B2: the sample TiO that steps A is obtained 2inculating crystal layer 2 is placed in reactor down, pours the aqueous solution of step B1 into submergence TiO 2inculating crystal layer 2 surface, at 150-180 oreact 7.5-8.5 hour under C, take out after cooling, obtain the TiO of [002] oriented growth 2nano-array thin layer 3.
Electrolytic solution of the present invention and ultracapacitor thereof is introduced in detail below in conjunction with specific embodiment.
Embodiment one
Cleaning FTO conductive glass layer 1: FTO conductive glass layer 1 is successively put into acetone, absolute ethyl alcohol, deionized water ultrasonic 20min successively, and dry for standby;
Ti is installed 2o 3target and substrate: by Ti 2o 3target is installed on magnetic control sputtering system negative electrode target position, and the distance regulating target and substrate is that 60mm, FTO conductive glass layer 1 is placed on substrate location, water-cooled;
Cleaning Ti 2o 3target: be evacuated down to 10 -4during the Pa order of magnitude, pass into 50sccm argon gas and 1sccm oxygen to magnetron sputtering chamber, controlling chamber deposition pressure pressure is 1Pa, regulates radio frequency Ti 2o 3the power of target is 120W, carries out the cleaning of 10min aura to target;
Sputtering sedimentation and annealing: after having cleaned, regulate radio frequency Ti 2o 3the power of target is 120W, continues sputtering sedimentation 20min.The sample obtained is 500 oc short annealing 5 minutes, obtains the TiO of [002] orientation 2inculating crystal layer 2.
Configuration hydro-thermal reaction solution: stir, while add 15ml deionized water successively in beaker, 15ml absolute ethyl alcohol, 30ml concentration is the tetra-n-butyl titanate of the hydrochloric acid of 36-38%, 1ml purity >=98%;
Hydrothermal Synthesis TiO 2nano-array thin layer 3: the sample TiO that sputtering sedimentation is good 2inculating crystal layer 2 is placed in reactor down, pours hydro-thermal reaction solution into submergence TiO 2inculating crystal layer 2 surface, 150 oreact 8 hours under C, naturally take out after cooling, obtain TiO 2nano-array thin layer 3.
The preparation of interdigital electrode 4: by purity be 99.99% Pt target be installed on magnetic control sputtering system negative electrode target position, the distance regulating target and substrate is 60mm, at the TiO of hydrothermal growth 2nano-array thin layer 3 surface is covered with X-shape mask plate, opens pumping system, when base vacuum is extracted into 10 -4during the Pa order of magnitude, pass into 21sccm argon gas to chamber, control chamber pressure is 0.5Pa, and the power regulating direct current Pt target is 40W, carries out 5min sputter coating to target.
To TiO at 25 ± 5 DEG C 2gas sensor detects.Gas sensing property testing result shows, and the sensor response time is about 120-180s, and time release time is about 300s, TiO 2show good gas-sensitive property at low concentrations, when H2 concentration is 4ppm, resistance can decline 2.5%, and repeatability better, but no matter resistance value is dropping in minimum or resistance rejuvenation, all less stables.
Embodiment two
The embodiment of the present invention two is substantially identical with embodiment one, and difference is: through Hydrothermal Synthesis TiO 2after nano-array thin layer 3, by TiO 2nano-array thin layer 3 is annealed at 400 DEG C 20min under Ar atmosphere protection.
To TiO at 25 ± 5 DEG C 2gas sensor detects.Gas sensing property testing result shows, the response time of sensor and release time are all shorter, be within the scope of 1-1000ppm at density of hydrogen, the sensor response time is about 10s, density of hydrogen is within the scope of 1-80ppm, and sensor Mean Time To Recovery is 134s, and density of hydrogen is 100-1000ppm, sensor is faster for release time, is 36-66s.TiO 2show good gas-sensitive property at low concentrations, when density of hydrogen is 1ppm, resistance can decline 4%, resistance value drop to minimum after, energy immediate stability is in this value, and this good situations appears in the Recovery Process of resistance equally, and the repeatability of device and stability are all better.
Embodiment three
The embodiment of the present invention three is substantially identical with embodiment one, and difference is: not depositing Ti O 2inculating crystal layer 2, provides FTO conductive glass layer 1, directly enters the process of configuration hydro-thermal reaction solution.The preparation process of configuration hydro-thermal reaction solution, Hydrothermal Synthesis TiO2 nano-array thin layer 3, interdigital electrode 4 is identical with embodiment one.
To TiO at 25 ± 5 DEG C 2gas sensor detects.Gas sensing property testing result show, under density of hydrogen is 750ppm, the sensor response time is 11s, first time measure, resistance value can only return to 72% of initial value, after repetitive measurement, and resistance value can not be recovered, repeatability and stability undesirable.
Adopt the surface of high resolution scanning Electronic Speculum, x-ray diffractometer, Raman spectrum analysis film and Cross Section Morphology, crystal structure and orientation and thin film composition.Wherein high resolution scanning electronic microscope photos uses NEC company JSM-7100F model field emission scanning electron microscope, and operating voltage is 20KV.X-ray diffraction analysis adopts German Brooker D8A25 model, and radiographic source employing wavelength is the Cu K alpha ray source of λ=0.15418 nm.Raman spectrum analysis uses the burnt micro-Raman spectroscopy of Britain Reinshaw company Invia type copolymerization to characterize, and excitation wavelength is 532 nm.
Fig. 2 is the TiO that embodiment one obtains 2the scanning electron microscope (SEM) photograph of inculating crystal layer 2, illustrates the TiO being obtained densification by magnetically controlled sputter method deposition 2inculating crystal layer 2.
Fig. 3 is the TiO that embodiment one obtains 2the Raman spectrogram of inculating crystal layer 2, Raman spectrum analysis shows, and the Raman spectrum of plating thin film of titanium oxide is at spectrum peak (458cm corresponding to former FTO substrate -1, 557cm -1) basis has newly increased 237cm -1, 447cm -1, 607cm -1raman peaks, as shown in Figure 3, correspond to Rutile Type TiO 2generation.
The XRD figure of Fig. 4 a and b TiO2 nano-array thin layer 3 of obtaining of corresponding embodiment one and embodiment three respectively, can see, increase TiO 2the sample of inculating crystal layer 2 only has the peak of [002] crystal face to occur without the assorted peak of other orientations, and not having TiO 2the TiO of inculating crystal layer 2 Direct Hydrothermal growth 2also there is crystallographic plane diffraction peak such as [101].This illustrates that pre-sputtering inculating crystal layer is conducive to TiO 2layer forms better [002] oriented growth.In addition, TiO is increased 2the sample XRD peak of inculating crystal layer 2 is by force without TiO 22 times of inculating crystal layer 2, illustrate TiO 2inculating crystal layer 2 is more conducive to TiO 2crystallization.
Fig. 5 a, c and b, d be the scanning electron microscope (SEM) photograph of TiO2 nano-array thin layer 3 that obtains of corresponding embodiment three and embodiment one respectively, under identical 8 hours hydro-thermal times, be added with thicker than the sample of Direct Hydrothermal 0.7 micron of the sample of pre-sputtering layer, TiO in water-heat process is described 2direct growth on pre-sputtering inculating crystal layer, decreases nucleated time, and corresponding growth thickness increases, and the diffraction peak intensity wild phase that this and XRD record is consistent.
The hydrogen gas performance plot of below the 100ppm that Fig. 6 a and b titanium deoxid film hydrogen gas sensor that corresponding embodiment one and embodiment two obtain respectively is measured at 25 ± 5 DEG C.Can see, TiO 2all show good gas-sensitive property at low concentrations.Especially after hydro-thermal through the TiO of annealing in process 2, performance is more excellent, and it is when hydrogen is 1ppm, resistance declines up to being 4%, its response time and release time are all very fast, and be within the scope of 1-1000ppm at density of hydrogen, the sensor response time is about 10s, density of hydrogen is within the scope of 1-80ppm, sensor Mean Time To Recovery is 134s, and density of hydrogen is 100-1000ppm, and sensor is faster for release time, for 36-66s, and the repeatability of device and stability are all better.
The explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in my protection domain of the claims in the present invention.

Claims (7)

1. a titanium deoxid film hydrogen gas sensor, it comprises: FTO conductive glass layer, [002] orientation TiO of surface attachment successively 2inculating crystal layer, [002] orientation TiO 2nano-array thin layer and interdigital electrode.
2. titanium deoxid film hydrogen gas sensor as claimed in claim 1, is characterized in that: described titanium deoxid film hydrogen gas sensor under 25 ± 5 DEG C of conditions to the detection Nong Du≤1ppm of hydrogen, resistance Bianization Shuai≤4%.
3. a preparation method for titanium deoxid film hydrogen gas sensor, it comprises the following steps:
FTO conductive glass layer is provided, adopts the TiO of magnetically controlled sputter method pre-deposition one deck [002] orientation on FTO conductive glass layer surface 2inculating crystal layer;
Adopt hydro-thermal method, at described TiO 2the TiO of orientation that seed crystal surface grows [002] 2nano-array thin layer;
At TiO 2nano-array thin-film surface arranges interdigital electrode.
4. the preparation method of titanium deoxid film hydrogen gas sensor as claimed in claim 3, is characterized in that: described step B also comprises, to TiO 2nano-array thin layer is annealed under an inert atmosphere.
5. the preparation method of titanium deoxid film hydrogen gas sensor as claimed in claim 4, it is characterized in that: annealing temperature described in step B is 380-420 DEG C, annealing time is 20-30min.
6. the preparation method of titanium deoxid film hydrogen gas sensor as claimed in claim 3, is characterized in that: described steps A comprises the following steps:
A1: by Ti 2o 3target is installed on magnetic control sputtering system negative electrode target position, and the distance regulating target and substrate is 50-70mm;
A2: regulate radio frequency Ti 2o 3the power of target is 110-130w, continues sputtering sedimentation 5-30min;
A3: the sample 450-500 DEG C of annealing 5-10min under an inert atmosphere that steps A 2 is obtained.
7. the preparation method of titanium deoxid film hydrogen gas sensor as claimed in claim 3, is characterized in that: described step B comprises:
B1: configure the solution be made up of according to following percent by volume water, ethanol, hydrochloric acid, tetra-n-butyl titanate:
Deionized water: 23%-27%
Ethanol: 24-25%
Hydrochloric acid: 48-50%
Tetra-n-butyl titanate: 1-2%
B2: the sample TiO that steps A is obtained 2inculating crystal layer is placed in reactor down, pours the solution of step B1 into submergence TiO 2seed crystal surface, at 150-180 oreact 7.5-8.5 hour under C, take out after cooling, obtain the TiO of [002] oriented growth 2nano-array thin layer.
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105334245A (en) * 2015-11-10 2016-02-17 湖北大学 Making method for molybdenum oxide nano-fiber paper hydrogen sensor
CN105510398A (en) * 2015-09-08 2016-04-20 浙江大学 Film-type alcohol gas-sensitive sensor and preparation method thereof
CN106017515A (en) * 2016-05-28 2016-10-12 惠州市力道电子材料有限公司 Double-face interdigital electrode, and processing method and application thereof
CN106525914A (en) * 2016-09-29 2017-03-22 湖北大学 Preparation method of barium strontium titanate nanoparticle modified titanium dioxide thin film hydrogen sensor
CN106841314A (en) * 2017-03-29 2017-06-13 西安交通大学 One kind is based on nano-TiO2Low-power consumption micro-nano gas sensor and preparation method
CN107643358A (en) * 2017-08-22 2018-01-30 中国船舶重工集团公司第七八研究所 A kind of hydrogen gas sensor based on the compound heat release principle of catalysis
CN109298030A (en) * 2018-11-22 2019-02-01 湖北大学 A kind of niobium doped anatase phase titanic oxide film gas sensor and preparation method thereof
CN109402583A (en) * 2018-11-22 2019-03-01 湖北大学 A kind of titania-doped Anatase of niobium and Rutile Type double-layer compound film gas sensor and preparation method thereof
CN110114662A (en) * 2016-12-28 2019-08-09 松下知识产权经营株式会社 Gas-detecting device, gas detecting system, fuel cell car and gas detection method
CN111141790A (en) * 2020-02-07 2020-05-12 湖北大学 Method for regulating and controlling detection concentration range and sensitivity of hydrogen detector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102153289A (en) * 2010-12-02 2011-08-17 中国科学院上海硅酸盐研究所 Laminar titanium dioxide array film and preparation method thereof
CN104032367A (en) * 2014-05-20 2014-09-10 中国科学院广州能源研究所 Method for preparing TiO2 nano nanopillar array by combination of pre-implantation of rutile-phase TiO2 film on titanium substrate and hydrothermal synthesis

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102153289A (en) * 2010-12-02 2011-08-17 中国科学院上海硅酸盐研究所 Laminar titanium dioxide array film and preparation method thereof
CN104032367A (en) * 2014-05-20 2014-09-10 中国科学院广州能源研究所 Method for preparing TiO2 nano nanopillar array by combination of pre-implantation of rutile-phase TiO2 film on titanium substrate and hydrothermal synthesis

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
G.K.MOR ET AL.: "A room-temperature TiO2-nanotube hydrogen sensor able to self-clean photoactively from environmental contamination", 《J. MATER. RES.》 *
OOMMAN K. VARGHESE, ET AL.: "A Titania Nanotube-Array Room-Temperature Sensor for Selective Detection of Hydrogen at Low Concentrations", 《JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY》 *
乔振聪等: "磁控溅射法制备氧化铜纳米线阵列薄膜及其气敏性质", 《中国科学》 *
尚飞鹏等: "Ag纳米颗粒修饰TiO2阵列薄膜的制备及其气敏性能研究", 《湖北大学学报（自然科学版）》 *
康福伟等: "TiO2纳米管制备及其在气体传感器中的应用研究进展", 《科技导报》 *
张雯等: "ZnO纳米线阵列的籽晶控制生长及其紫外探测性能", 《硅酸盐学报》 *
杨丽霞等: "二氧化钛纳米管阵列的制备、性能及传感应用研究", 《科学通报》 *

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CN105334245A (en) * 2015-11-10 2016-02-17 湖北大学 Making method for molybdenum oxide nano-fiber paper hydrogen sensor
CN106017515A (en) * 2016-05-28 2016-10-12 惠州市力道电子材料有限公司 Double-face interdigital electrode, and processing method and application thereof
CN106525914B (en) * 2016-09-29 2019-04-05 湖北大学 A kind of preparation method of barium strontium titanate modifying titanium dioxide film hydrogen gas sensor
CN106525914A (en) * 2016-09-29 2017-03-22 湖北大学 Preparation method of barium strontium titanate nanoparticle modified titanium dioxide thin film hydrogen sensor
CN110114662A (en) * 2016-12-28 2019-08-09 松下知识产权经营株式会社 Gas-detecting device, gas detecting system, fuel cell car and gas detection method
CN110114662B (en) * 2016-12-28 2022-03-18 新唐科技日本株式会社 Gas detection device, gas detection system, fuel cell vehicle, and gas detection method
CN106841314A (en) * 2017-03-29 2017-06-13 西安交通大学 One kind is based on nano-TiO2Low-power consumption micro-nano gas sensor and preparation method
CN107643358A (en) * 2017-08-22 2018-01-30 中国船舶重工集团公司第七八研究所 A kind of hydrogen gas sensor based on the compound heat release principle of catalysis
CN107643358B (en) * 2017-08-22 2021-07-06 中国船舶重工集团公司第七一八研究所 Hydrogen sensor based on catalysis composite heat release principle
CN109298030A (en) * 2018-11-22 2019-02-01 湖北大学 A kind of niobium doped anatase phase titanic oxide film gas sensor and preparation method thereof
CN109402583A (en) * 2018-11-22 2019-03-01 湖北大学 A kind of titania-doped Anatase of niobium and Rutile Type double-layer compound film gas sensor and preparation method thereof
CN109402583B (en) * 2018-11-22 2020-09-25 湖北大学 Niobium-doped titanium dioxide anatase phase and rutile phase double-layer composite film gas sensor and preparation method thereof
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CN111141790A (en) * 2020-02-07 2020-05-12 湖北大学 Method for regulating and controlling detection concentration range and sensitivity of hydrogen detector

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