CN104562067B - Preparation method of nano red selenium photoelectric material - Google Patents
Preparation method of nano red selenium photoelectric material Download PDFInfo
- Publication number
- CN104562067B CN104562067B CN201510045938.XA CN201510045938A CN104562067B CN 104562067 B CN104562067 B CN 104562067B CN 201510045938 A CN201510045938 A CN 201510045938A CN 104562067 B CN104562067 B CN 104562067B
- Authority
- CN
- China
- Prior art keywords
- selenium
- nanometer
- electrodeposition
- red
- nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011669 selenium Substances 0.000 title claims abstract description 42
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 15
- 238000004070 electrodeposition Methods 0.000 claims abstract description 14
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 14
- 239000002659 electrodeposit Substances 0.000 claims description 13
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 8
- 229910018143 SeO3 Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 14
- 229910003597 H2SeO3 Inorganic materials 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 13
- 239000008280 blood Substances 0.000 description 5
- 210000004369 blood Anatomy 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 239000013078 crystal Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PQUXFUBNSYCQAL-UHFFFAOYSA-N 1-(2,3-difluorophenyl)ethanone Chemical compound CC(=O)C1=CC=CC(F)=C1F PQUXFUBNSYCQAL-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229940047670 sodium acrylate Drugs 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
Abstract
The invention discloses a preparation method of a nano red selenium photoelectric material. The method comprises the following steps: (1) uniformly mixing 0.076-0.152g of thiocarbamide and 40mL of 0.020-0.030 mol/L H2SeO3 solution to prepare an electrodeposition solution; and (2) putting the electrodeposition solution obtained in the step (1) in a 30-50-DEG C water bath, and carrying out electrodeposition under the direct-current voltage of 1.5-1.9V for 3-7 minutes by using a platinum sheet as an anode and ITO (indium tin oxide) glass as a cathode to obtain the nano red selenium photoelectric material. The open-circuit photovoltage of the CdSxSey under simulated sunlight is up to 0.5894-0.8684V. Compared with other correlation techniques, the method has the most distinguishing characteristic of one-step electrodeposition for preparing the nano selenium electrode. The method has the advantages of simple technique and no pollution; and the prepared nano selenium has favorable photoelectric properties.
Description
Technical field
The present invention relates to a kind of preparation method of the red selenium photovoltaic material of nanometer.
Background technology
Nanometer selenium is a kind of p-type semiconductor, and indirect band gap is 1.6eV.Because selenium has very high photoconductivity, excellent list
To electric conductivity, sensitive optical Response, than larger piezoelectric effect and pyroelectric effect, therefore, it is in physical opticses performance
A kind of quite useful and use must compare a kind of extensive inorganic material, be mainly used to produce light cell, pressure transducer, duplicating and set
Standby, electric rectification device and exposure meter etc..
Since being found from selenium element, scientists are just conducted in-depth research to its property and purposes.Selenium element exists
The existing forms of nature are divided into two kinds of amorphous selenium and crystal form selenium.Monocrystalline selenium is a kind of very important semi-conducting material, brilliant
The fusing point of shape selenium than relatively low, with higher light guide efficiency and efficient chemism, so crystal formation selenium is widely used in light
The aspects such as battery manufacture, mechanical induction apparatuss manufacture, commutator manufacture.
Zhang Xu, Xie Yi et al. are using the dismutation reaction of acidization tool and sodium thiosulfate at room temperature in polyacrylic acid-poly-
A diameter of 50nm, a length of 5 μm of Monocrystalline Selenium Nanowires are prepared in the buffer system of sodium acrylate.Selenium can be received using this method
The nucleation and growth time of rice noodle shorten to 3h and can successfully grow the selenium nanowires of single-size, but complexity is organic
System causes by-product more.Zhang Hongshun, Wang Jixiao are using reflux N2H2·H2O and H2SeO3After solution mixing, occur
Redox reaction obtains selenium nanowires, this preparation method, and reflux temperature affects Se nucleus to generate, and dwell temperature affects Se to receive
Rice noodle liquid growth, this growth pattern, the more difficult control of temperature.And electrodeposition process prepares the red selenium photovoltaic material of nanometer, there is not yet
Report for work, the method preparation condition is relatively easy, and process conditions are easily controllable.
The content of the invention
It is an object of the invention to provide a kind of method that electrodeposition process prepares the red selenium photovoltaic material of nanometer.
Concretely comprise the following steps：
（1）By 0.076～0.152g（0.001～0.002mol）Thiourea and 40mL concentration are 0.020～0.030mol/L
H2SeO3Solution uniformly mixes, and is configured to electrodeposit liquid.
（2）By step（1）Gained electrodeposit liquid is placed in 30～50 DEG C of water-baths, and with platinized platinum as anode, ito glass is the moon
Pole, electrodeposition time 3～7 minutes under 1.5～1.9V of DC voltage are obtained the red selenium photovoltaic material of nanometer that is, on ito glass.
The open-circuit photovoltage of the red selenium photovoltaic material of nanometer reaches 0.5894～0.8684V under simulated solar irradiation.
Compared with other correlation techniques, most outstanding feature is that the step of two electrode system electrodeposition process one prepares nanometer to the present invention
Red selenium, there is provided a kind of brand-new with H2SeO3It is the method that raw material prepares the red selenium of nanometer with thiourea；The red selenium of gained nanometer has good
Photoelectricity performance；There is the preparation technology of the present invention mild condition, easily operated, low cost, a pollution-free, step to make electricity
Pole, the open-circuit photovoltage of the red selenium of gained nanometer, also than larger, is a kind of preferable photoelectric material, is expected to as solar photocell
Material.
Specific embodiment
Embodiment 1：
（1）By 0.076g（0.001mol）Thiourea and the H that 40mL concentration is 0.02mol/L2SeO3Solution uniformly mixes, and matches somebody with somebody
Electrodeposit liquid is made, solution is in blood red.
（2）By step（1）Resulting solution is placed in 30 DEG C of water-baths, and with platinized platinum as anode, ito glass is negative electrode, in 1.9V
Electro-deposition 3 minutes under DC voltage, i.e., be obtained the red selenium photovoltaic material of nanometer on ito glass.
The open-circuit photovoltage of the red selenium photovoltaic material of nanometer is 0.5894V under simulated solar irradiation.
Embodiment 2：
（1）By 0.076g（0.001mol）Thiourea and the H that 40mL concentration is 0.030mol/L2SeO3Solution uniformly mixes,
Electrodeposit liquid is configured to, solution is in blood red.
（2）By step（1）Gained electrodeposit liquid is placed in 50 DEG C of water-baths, and with platinized platinum as anode, ito glass is negative electrode,
Electro-deposition 7 minutes under 1.5V DC voltages, i.e., obtain the red selenium photovoltaic material of nanometer on ito glass.
The open-circuit photovoltage of the red selenium photovoltaic material of nanometer is 0.7838V under simulated solar irradiation.
Embodiment 3：
（1）By 0.152g（0.002mol）Thiourea and the H that 40mL concentration is 0.030mol/L2SeO3Solution uniformly mixes, and matches somebody with somebody
Electrodeposit liquid is made, solution is in blood red.
（2）By step（1）Gained electrodeposit liquid is placed in 40 DEG C of water-baths, and with platinized platinum as anode, ito glass is negative electrode,
Electro-deposition 5 minutes under 1.7V DC voltages, i.e., be obtained the red selenium photovoltaic material of nanometer on ito glass.
The open-circuit photovoltage of the red selenium photovoltaic material of nanometer is 0.8348V under simulated solar irradiation.
Embodiment 4：
（1）By 0.114g（0.0015mol）Thiourea and the H that 40mL concentration is 0.025mol/L2SeO3Solution uniformly mixes,
Electrodeposit liquid is configured to, solution is in blood red.
（2）By step（1）Gained electrodeposit liquid is placed in 40 DEG C of water-baths, and with platinized platinum as anode, ito glass is negative electrode,
Electro-deposition 5 minutes under 1.7V DC voltages, i.e., be obtained the red selenium photovoltaic material of nanometer on ito glass.
The open-circuit photovoltage of the red selenium photovoltaic material of nanometer is 0.8606V under simulated solar irradiation.
Embodiment 5：
（1）By 0.076g（0.001mol）Thiourea and the H that 40mL concentration is 0.025mol/L2SeO3Solution uniformly mixes,
Electrodeposit liquid is configured to, solution is in blood red.
（2）By step（1）Gained electrodeposit liquid is placed in 30 DEG C of water-baths, and with platinized platinum as anode, ito glass is negative electrode,
Electro-deposition 7 minutes under 1.7V DC voltages, i.e., be obtained the red selenium photovoltaic material of nanometer on ito glass.
The open-circuit photovoltage of the red selenium photovoltaic material of nanometer is 0.8684V under simulated solar irradiation.
Claims (1)
1. the preparation method of the red selenium photovoltaic material of a kind of nanometer, it is characterised in that concretely comprise the following steps：
（1）By 0.076～0.152g thiourea and H that 40mL concentration is 0.020～0.030mol/L2SeO3Solution uniformly mixes,
It is configured to electrodeposit liquid；
（2）By step（1）Gained electrodeposit liquid is placed in 30～50 DEG C of water-baths, and with platinized platinum as anode, ito glass is negative electrode,
Electrodeposition time 3～7 minutes under 1.5～1.9V of DC voltage, i.e., be obtained the red selenium photovoltaic material of nanometer on ito glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510045938.XA CN104562067B (en) | 2015-01-29 | 2015-01-29 | Preparation method of nano red selenium photoelectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510045938.XA CN104562067B (en) | 2015-01-29 | 2015-01-29 | Preparation method of nano red selenium photoelectric material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104562067A CN104562067A (en) | 2015-04-29 |
| CN104562067B true CN104562067B (en) | 2017-04-12 |
Family
ID=53079115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510045938.XA Active CN104562067B (en) | 2015-01-29 | 2015-01-29 | Preparation method of nano red selenium photoelectric material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104562067B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1434132A (en) * | 1973-06-19 | 1976-05-05 | Standard Tleephones Cables Ltd | Selenium electrophoretic deposition |
| US20090283411A1 (en) * | 2008-05-15 | 2009-11-19 | Serdar Aksu | Selenium electroplating chemistries and methods |
| US8840770B2 (en) * | 2010-09-09 | 2014-09-23 | International Business Machines Corporation | Method and chemistry for selenium electrodeposition |
| CN102776524B (en) * | 2011-05-09 | 2015-12-16 | 河北天寅生物技术有限公司 | The preparation method of nanometer selenium |
| CN102228469B (en) * | 2011-06-08 | 2013-01-16 | 朱茂祥 | Nano-selenium particles and preparation method thereof |
| CN104310319B (en) * | 2014-09-30 | 2016-03-23 | 中国农业大学 | A kind of preparation method of nanometer selenium |
-
2015
- 2015-01-29 CN CN201510045938.XA patent/CN104562067B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104562067A (en) | 2015-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | High-performance self-powered UV detector based on SnO 2-TiO 2 nanomace arrays | |
| Jiang et al. | Designing large-area single-crystal perovskite solar cells | |
| CN103000381A (en) | Method for manufacturing ZnO/CuInS<2> nanorod film with core-shell structure | |
| CN109841740A (en) | A kind of preparation method of the perovskite solar cell based on nickel oxide hole transmission layer | |
| CN108335911B (en) | Microelectronic device for producing hydrogen by decomposing water through sunlight and preparation method thereof | |
| CN103871750B (en) | Anatase TiO2 nanometer tree array and application of anatase TiO2 nanometer tree array to solar cell preparation | |
| CN109065727A (en) | A kind of preparation method of perovskite solar battery | |
| CN109626422A (en) | A kind of TiO2/g-C3N4The preparation method and applications of light anode nanocomposite | |
| CN103700725A (en) | Preparation method of nano-particle-based copper indium sulphur selenium film for solar battery | |
| CN104282440B (en) | Method for preparing sulfur group quantum dot sensitization oxide semiconductor photo-anode | |
| CN108922927A (en) | A kind of stable compound semiconductor sun photodegradation aquatic products hydrogen electronic device, electrode system and preparation method thereof | |
| CN105576128A (en) | Method for controlling features of light absorption layer of perovskite solar battery | |
| CN102122577A (en) | Titanium dioxide (TiO2) nano-rod single-crystal array thin film as well as preparation method and application thereof | |
| CN102877101B (en) | Method for preparing solar cell buffer layer ZnS film through electro-deposition by taking CuInSe2 film as base | |
| CN104562067B (en) | Preparation method of nano red selenium photoelectric material | |
| CN104091693B (en) | Method for preparing Cd1-xMnxSe quantum dot solar cell | |
| CN109473550A (en) | A kind of large area perovskite solar battery and preparation method thereof | |
| CN108545960A (en) | A kind of Y doping zinc oxide nanometers stick array preparation method | |
| CN102222575A (en) | Preparation method for photoanode of dye-sensitized solar cell | |
| CN103871745A (en) | Dendritic ZnO nanowire array structural material and preparation method and application thereof | |
| CN105789373A (en) | Method for preparing copper-based sulfoselenide semiconductor thin film | |
| CN105951146A (en) | Preparation method for antimony sulfide films | |
| CN102315333B (en) | Preparation of ZnSnS film and ZnSnS/SnS heterojunction, and application of solar cells | |
| CN104674317A (en) | Preparation method of ZnS solar cell film material | |
| CN105405656B (en) | A kind of graded structure Zn2SnO4And its application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240108 Address after: Room 304, 3rd Floor, New Development Building, No. 288 Changzhi Road, Xuefu Industrial Park, Shanxi Transformation and Comprehensive Reform Demonstration Zone, Taiyuan City, Shanxi Province, 030000 Patentee after: Taiyuan Lintie Enterprise Management Consulting Co.,Ltd. Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: GUILIN University OF TECHNOLOGY |