CN104555892A - Production method of terahertz narrow-band microwave absorber capable of dynamically adjusting absorption peak position - Google Patents
Production method of terahertz narrow-band microwave absorber capable of dynamically adjusting absorption peak position Download PDFInfo
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- CN104555892A CN104555892A CN201310483331.0A CN201310483331A CN104555892A CN 104555892 A CN104555892 A CN 104555892A CN 201310483331 A CN201310483331 A CN 201310483331A CN 104555892 A CN104555892 A CN 104555892A
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Abstract
The invention discloses a production method of a terahertz narrow-band microwave absorber capable of dynamically adjusting the absorption peak position. The method mainly comprises technologies such as multilayer thin-film deposition on a silicon substrate, photoetching, dry etching, wet etching and the like. The method is characterized in that the produced microwave absorber adopts an array structure, a micro-mirror capable of rotating around a shaft under the effect of the electrostatic force is arranged in the center of each unit in the array structure, and an I-shaped metal resonator is arranged in the center of the surface of each micro-mirror and used for producing resonance absorption. The terahertz narrow-band microwave absorber produced with the production method of the terahertz narrow-band microwave absorber capable of dynamically adjusting the absorption peak position and applicable to a terahertz frequency band can dynamically and continuously adjust the absorption peak position, so that the defect that absorption peak positions of conventional terahertz microwave absorbers are not adjustable is overcome. The terahertz microwave absorber can greatly increase the frequency selectivity and has very important application values in fields of terahertz detection, terahertz filtering and frequency-selective terahertz thermal imaging.
Description
Technical field
The present invention relates to Terahertz Technology field, the Terahertz arrowband wave-absorber preparation method that particularly a kind of absworption peak position is dynamically adjustable.
Background technology
Current, the major reason that restriction Terahertz Technology is applied lacks highly sensitive terahertz detector.For improving the detectivity of terahertz detector, those skilled in the art proposes receiving surface Terahertz arrowband wave-absorber being produced on fuel factor terahertz detector recently, to improve the absorptivity of terahertz detector to incident THz wave, thus improve detectivity.But existing Terahertz arrowband wave-absorber is all have super-absorbent effect for some CF or frequency range, can not carry out dynamic regulation according to concrete application scenario to absworption peak position, greatly limit the applicable frequency range of terahertz detector like this.
Summary of the invention
The technical problem to be solved in the present invention is: for the deficiencies in the prior art, proposes the preparation method of the dynamically adjustable Terahertz arrowband wave-absorber in a kind of absworption peak position.The wave-absorber of absworption peak position of the present invention dynamic regulation and control is the array structures adopting making technology of MEMS to make, in array, each unit is containing a micro-reflector rotated under electrostatic force, the minute surface of speculum produces " work " font metal resonators of arrowband super-absorbent to incident THz wave containing an energy.Under the driving of electrostatic force, " work " font metal resonators on micro-reflector and its surface can pivot, and changes the incidence angle of THz wave with this, thus realizes the dynamic regulation to absworption peak position.The Terahertz arrowband wave-absorber of this absworption peak position dynamic regulation and control can be produced on the receiving surface of conventional fuel factor terahertz detector, to improve the sensitivity of terahertz detector and detectable frequency range.In addition, can also use as Terahertz bandstop filter.
The technical solution adopted for the present invention to solve the technical problems is:
The Terahertz arrowband wave-absorber preparation method that a kind of absworption peak position is dynamically adjustable, comprise the micro reflector array that can pivot under adopting photoetching, deposition (or sputtering) and stripping technology to be produced on electrostatic force, and in array, the face center of each unit micro-reflector there is " work " font metal resonators.Speculum is connected with quadrate support ring by rotating shaft, and quadrate support ring is fixed in substrate by the anchor point that four are positioned on angle, and quadrate support ring upper surface has a square metal ring.Concrete fabrication processing comprises:
(1) (or deposition) one deck silicon nitride (thickness is 0.05 ~ 1 μm) is sputtered on a silicon substrate;
(2) face deposits ground floor polysilicon (thickness is 0.4 ~ 1.5 μm) and Doping Phosphorus on the insulating layer;
(3) polysilicon is etched, form bottom electrode;
(4) on the polysilicon face deposition layer of silicon dioxide or phosphorosilicate glass (thickness is 1.5 ~ 6 μm) and etching formed anchor position;
(5) on silica or phosphorosilicate glass, second layer polysilicon (thickness is 1.5 ~ 3 μm) is deposited and Doping Phosphorus;
(6) etching of second layer polysilicon, forms micro-reflector, rotating shaft, anchor point and the quadra that can pivot;
(7) face adopts metal level stripping technology (Lift off) to deposit the metal of one deck 0.05 ~ 0.5 μm on the polysilicon, then peels off " work " font metal resonators forming mirror surface;
(8) print is put into volumetric concentration be 30% ~ 60% hydrofluoric acid solution bubble 15 ~ 30 minutes, with corrode silicon dioxide layer and release moving reflector;
(9) print is taken out from hydrofluoric acid solution, then put into rapidly carbon dioxide critical point drying instrument and carry out drying.
Described metallic film can be gold, copper, aluminium or titanium platinum.
The length of side of described each unit is 100 ~ 600 μm, and the length of side of unit central movable speculum is 40 ~ 400 μm.
Two horizontal line length of " work " font metal resonators in described each unit are 50 ~ 500 μm, and center vertical line length is 50 ~ 500 μm, and line width is 2 ~ 20 μm.
" work " font metal resonators Edge Distance moving reflector Edge Distance in described each unit is 3 ~ 20 μm.
In described each unit, the distance of moving reflector Edge Distance quadrate support ring inward flange is 3 ~ 20 μm.
In described each unit, the width of square metal ring is 3 ~ 15 μm, and square metal ring inward flange distance quadrate support ring inward flange is 3 ~ 10 μm, and outward flange is aimed at quadrate support petticoat.
The advantage that the present invention is compared with prior art had: the present invention is by the micro-reflector that can pivot under being introduced in electrostatic force and " work " font metal resonators, realize the dynamic regulation to incident THz wave incidence angle, thus the dynamic regulation realized wave-absorber absworption peak position, greatly can improve sensitivity and the operating frequency range of conventional fuel factor terahertz detector like this.
Accompanying drawing explanation
The cellular construction schematic diagram of Fig. 1 after low-resistance deposited on silicon substrates silicon nitride dielectric layer.
Fig. 2 deposits ground floor polysilicon and etches the cellular construction schematic diagram after forming bottom electrode.
Fig. 3 deposition of silica or phosphorosilicate glass also etch the cellular construction schematic diagram after forming anchor position.
Fig. 4 deposits second layer polysilicon and etches the cellular construction schematic diagram after forming rotatable mirror, rotating shaft, anchor point and quadrate support ring.
Fig. 5 deposition surface metal level cellular construction schematic diagram after peeling off formation " work " font resonator and square metal ring.
Fig. 6 wet etching silica dried cellular construction schematic diagram
Fig. 72 × 2 unit two-dimensional array structure stravismus schematic diagram.
Fig. 82 × 2 unit two-dimensional array structure schematic top plan view.
In figure: 1 is low-resistance silicon base, 2 is silicon nitride dielectric layer, and 3 is polysilicon lower electrode, and 4 is silica or phosphorosilicate glass layer, 5 is anchor position, and 6 is rotatable mirror, and 7 is rotating shaft, and 8 is quadrate support ring, 9 is anchor point, and 10 is I-shaped metal resonators, and 11 is square metal ring.
Specific embodiment
The present invention is introduced in detail below in conjunction with the drawings and specific embodiments.
Be the dynamically adjustable Terahertz arrowband wave-absorber in the square absworption peak position of 120 μm × 120 μm and 2 × 2 cell arrays thereof for unit size in array below, by reference to the accompanying drawings the present invention be described specifically.
As shown in Figure 1, first in low-resistance silicon base 1, deposit thickness is the ground floor silicon nitride dielectric layer 2 of 0.6 μm.Then, as shown in Figure 2, continue deposit thickness and be the ground floor polysilicon of 0.5 μm and etch, etching depth equals the thickness of ground floor polysilicon, forms polysilicon lower electrode 3.As shown in Figure 3, then deposit thickness is the silica of 3 μm or phosphorosilicate glass 4 and etches thereon, and etching depth equals the thickness of silica or phosphorosilicate glass 4, forms the support anchor position 5 of quadrate support ring.Then, as shown in Figure 4, continue deposit thickness and be the second layer polysilicon of 2 μm and etch, etching depth equals the thickness of second layer polysilicon, forms rotatable mirror 6, rotating shaft 7, quadrate support ring 8 and anchor point 9.As shown in Figure 5, continue deposit thickness and be the metal level of 0.5 μm and etch, etching depth equals the thickness of metal level, forms " work " font metal resonators 10 and square metal ring 11.Then, print is put into the hydrofluoric acid solution bubble 15 ~ 30 minutes that volumetric concentration is 30% ~ 60%, with corrode silicon dioxide or phosphorosilicate glass layer to discharge moving reflector.Finally, put into rapidly carbon dioxide critical point drying instrument after being taken out from hydrofluoric acid solution by print and carry out drying, cellular construction schematic diagram final after drying as shown in Figure 6.Fig. 7 is 2 × 2 unit two-dimensional array structure stravismus schematic diagrames, and Fig. 8 is 2 × 2 unit two-dimensional array structure schematic top plan view.
Claims (7)
1. the Terahertz arrowband wave-absorber preparation method that an absworption peak position is dynamically adjustable, it is characterized in that: the micro reflector array that can pivot under adopting photoetching, deposition (or sputtering) and stripping technology to be produced on electrostatic force, and in array, the face center of each unit micro-reflector has " work " font metal resonators.Speculum is connected with quadrate support ring by rotating shaft, and quadrate support ring is fixed in substrate by the anchor point that four are positioned on angle, and quadrate support ring upper surface has a square metal ring.Concrete fabrication processing comprises:
(1) (or deposition) one deck silicon nitride (thickness is 0.05 ~ 1 μm) is sputtered on a silicon substrate;
(2) face deposits ground floor polysilicon (thickness is 0.4 ~ 1.5 μm) and Doping Phosphorus on the insulating layer;
(3) polysilicon is etched, form bottom electrode;
(4) face deposits layer of silicon dioxide (thickness is 1.5 ~ 6 μm) and etching formation anchor position on the polysilicon;
(5) at silica deposit second layer polysilicon (thickness is 1.5 ~ 3 μm) and Doping Phosphorus;
(6) etching of second layer polysilicon, forms micro-reflector, rotating shaft, anchor point and the quadrate support ring that can pivot;
(7) face adopts metal level stripping technology (Lift off) to deposit the metal of one deck 0.05 ~ 0.5 μm on the polysilicon, then peels off " work " font metal resonators forming mirror surface;
(8) print is put into volumetric concentration be 30% ~ 60% hydrofluoric acid solution bubble 15 ~ 30 minutes, with corrode silicon dioxide layer and release movable structure;
(9) print is taken out from hydrofluoric acid solution, then put into rapidly carbon dioxide critical point drying instrument and carry out drying.
2. the metallic film according to claim 1 (6) can be gold, copper, aluminium or titanium platinum.
3. the length of side of each unit is 100 ~ 600 μm according to claim 1, and the length of side of unit central movable speculum is 40 ~ 400 μm.
4. two horizontal line length of " work " font metal resonators in each unit according to claim 1 are 50 ~ 500 μm, and center vertical line length is 50 ~ 500 μm, and line width is 2 ~ 20 μm.
5. " work " font metal resonators Edge Distance moving reflector Edge Distance in each unit according to claim 1 is 3 ~ 20 μm.
6. in each unit according to claim 1, the distance of moving reflector Edge Distance quadrate support ring inward flange is 3 ~ 20 μm.
7. in each unit according to claim 1, the width of square metal ring is 3 ~ 15 μm, and square metal ring inward flange distance quadrate support ring inward flange is 3 ~ 10 μm, and outward flange is aimed at quadrate support petticoat.
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| CN109406442A (en) * | 2018-10-30 | 2019-03-01 | 桂林电子科技大学 | A kind of method of rapid survey protein heat denaturation temperature |
| CN109946261A (en) * | 2017-12-20 | 2019-06-28 | 中国科学院深圳先进技术研究院 | Adjustable THz wave detection device of absorbing wavelength and preparation method thereof |
| CN110515223A (en) * | 2019-07-31 | 2019-11-29 | 电子科技大学 | A kind of Terahertz dynamic phase modulation device based on vanadium dioxide |
| CN111952731A (en) * | 2020-08-24 | 2020-11-17 | 桂林电子科技大学 | Electrically-controlled conversion terahertz single-frequency-three-frequency absorption converter |
| CN116962123A (en) * | 2023-09-20 | 2023-10-27 | 大尧信息科技(湖南)有限公司 | Raised cosine shaping filter bandwidth estimation method and system of software defined framework |
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2013
- 2013-10-15 CN CN201310483331.0A patent/CN104555892A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109946261A (en) * | 2017-12-20 | 2019-06-28 | 中国科学院深圳先进技术研究院 | Adjustable THz wave detection device of absorbing wavelength and preparation method thereof |
| CN109946261B (en) * | 2017-12-20 | 2021-07-16 | 中国科学院深圳先进技术研究院 | Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof |
| CN109406442A (en) * | 2018-10-30 | 2019-03-01 | 桂林电子科技大学 | A kind of method of rapid survey protein heat denaturation temperature |
| CN109406442B (en) * | 2018-10-30 | 2021-01-05 | 桂林电子科技大学 | Method for rapidly measuring protein thermal denaturation temperature |
| CN110515223A (en) * | 2019-07-31 | 2019-11-29 | 电子科技大学 | A kind of Terahertz dynamic phase modulation device based on vanadium dioxide |
| CN110515223B (en) * | 2019-07-31 | 2020-08-11 | 电子科技大学 | Vanadium dioxide-based terahertz dynamic phase modulator |
| CN111952731A (en) * | 2020-08-24 | 2020-11-17 | 桂林电子科技大学 | Electrically-controlled conversion terahertz single-frequency-three-frequency absorption converter |
| CN111952731B (en) * | 2020-08-24 | 2022-07-08 | 桂林电子科技大学 | Electrically-controlled converted terahertz single-frequency-three-frequency absorption converter |
| CN116962123A (en) * | 2023-09-20 | 2023-10-27 | 大尧信息科技(湖南)有限公司 | Raised cosine shaping filter bandwidth estimation method and system of software defined framework |
| CN116962123B (en) * | 2023-09-20 | 2023-11-24 | 大尧信息科技(湖南)有限公司 | Raised cosine shaping filter bandwidth estimation method and system of software defined framework |
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