CN104538493A - Method for improving conversion efficiency of crystalline silicon photovoltaic cell - Google Patents
Method for improving conversion efficiency of crystalline silicon photovoltaic cell Download PDFInfo
- Publication number
- CN104538493A CN104538493A CN201410778058.9A CN201410778058A CN104538493A CN 104538493 A CN104538493 A CN 104538493A CN 201410778058 A CN201410778058 A CN 201410778058A CN 104538493 A CN104538493 A CN 104538493A
- Authority
- CN
- China
- Prior art keywords
- conversion efficiency
- silicon chip
- photovoltaic cell
- cell conversion
- described step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 230000005855 radiation Effects 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 230000001737 promoting effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- ZDVYABSQRRRIOJ-UHFFFAOYSA-N boron;iron Chemical compound [Fe]#B ZDVYABSQRRRIOJ-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for improving the conversion efficiency of a crystalline silicon photovoltaic cell. The method comprises the following steps that (a), a silicon wafer to be processed is arranged in a dark room and is subjected to radiation treatment of flare light; (b), an electric field is applied to the silicon wafer, and it is ensured that the electric field direction of the electric field is parallel with the normal direction of the silicon wafer; (c), etching processing is carried out on the silicon wafer, and a metal impurity layer gathered on the surface of the silicon wafer is removed in an etching mode. The metal impurities in the silicon wafer can be effectively removed, and therefore the conversion efficiency of the cell is remarkably improved.
Description
Technical field
The present invention relates to a kind of method promoting crystal silicon photovoltaic cell conversion efficiency.
Background technology
At present, no matter the silicon material purity prepared for crystal silicon chip generally more than 99.9999%, but is in pulling single crystal or the preparation process of ingot casting polycrystalline, and the purity of the crucible purity and graphite piece that contain silicon melt is all well below the purity of silicon material.A large amount of impurity is particularly that the metal impurities of representative have entered into silicon crystal with iron, due to the existence in few sub-complex centre in a large number, photo-generated carrier is fallen by compound significantly.Therefore, reducing metal impurities, is the important channel promoting photovoltaic cell conversion efficiency.The Martin A.Green of University of New South Wales teaches in Silicon Solar Cell mono-book write, namely quantitative description is had, if make the content of iron tramp be reduced to 1ppbw by 100ppbw, then battery conversion efficiency relative value can promote 30% significantly.But be according to existing reduction iron content technology, as high-purity crucible reduces iron tramp technology, very faint to the reduction effect of impurity, and still there is a series of technical barrier and urgently overcome.
Summary of the invention
Technical problem to be solved by this invention is the defect overcoming prior art, provides a kind of method promoting crystal silicon photovoltaic cell conversion efficiency, and it can make the metal impurities in wafer bulk effectively be removed, thus significantly promotes the conversion efficiency of battery.
In order to solve the problems of the technologies described above, the first technical scheme of the present invention is: a kind of method promoting crystal silicon photovoltaic cell conversion efficiency, and the step of the method is as follows:
A pending silicon chip is placed in darkroom by (), make it accept passage of scintillation light treatment with irradiation;
B () applies an electric field to silicon chip again, and guarantee that the direction of an electric field of this electric field is parallel to the normal direction of silicon chip;
C () then carries out etching processing to silicon chip, etch away the metal impurities layer being gathered in silicon chip surface.
Further, in described step (a), the photon energy of passage of scintillation light is greater than 1.1eV.
Further, in described step (b), the application time applying electric field is 10s ~ 20min.
Further, in described step (c), etching operation before making herbs into wool namely prepared by battery is placed in the etching processing of silicon chip.
Further, in described step (c), in etch processes, one side etches away 3 ~ 5 μm.
In order to solve the problems of the technologies described above, the second technical scheme of the present invention is: a kind of method promoting crystal silicon photovoltaic cell conversion efficiency, and the step of the method is as follows:
A pending silicon chip is placed in darkroom by (), make it accept passage of scintillation light treatment with irradiation;
B () applies an alternating magnetic field to silicon chip again, and guarantee that the magnetic direction of this alternating magnetic field is parallel to the normal direction of silicon chip;
C () then carries out etching processing to silicon chip, etch away the metal impurities layer being gathered in silicon chip surface.
Further, in described step (a), the photon energy of passage of scintillation light is greater than 1.1eV.
Further, in described step (b), the application time applying alternating magnetic field is 10s ~ 20min.
Further, in described step (c), etching operation before making herbs into wool namely prepared by battery is placed in the etching processing of silicon chip.
Further, in the etch processes of described step (c), one side etches away 3 ~ 5 μm.
After have employed technique scheme, this method is for the silicon chip cut, under the effect of space magnetic field or electric field, make to take charged metal ion under the driving of Lorentz force or Coulomb force, move to the surface of silicon chip, the first operation then utilizing battery to prepare, etch away the metal impurities layer of surface aggregation, thus reaching the object removing metal impurities in wafer bulk, the conversion efficiency of battery resulting in and significantly promotes.
Embodiment
In order to make content of the present invention more easily be clearly understood, below according to specific embodiment, the present invention is further detailed explanation.
Embodiment one
Promote a method for crystal silicon photovoltaic cell conversion efficiency, the step of the method is as follows:
A pending silicon chip is placed in darkroom by (), make it accept passage of scintillation light treatment with irradiation; Wherein, the photon energy of passage of scintillation light is greater than 1.1eV, and adopts that wavelength is 800nm, irradiation intensity is 3000W/m
2light process 50ms; The object of this step is: break up iron boron complex, makes interstitial iron metal impurities be separated into the metal ion of band+divalent or+3 valencys;
B () applies electric field 10s or 20min or 10min to silicon chip again, and guarantee that the direction of an electric field of this electric field is parallel to the normal direction of silicon chip; Wherein, the application time of the applying electric field of the present embodiment can control in 10s ~ 20min; The object of this step is: utilize metal ion under the effect of space electric field, have the feature of displacement, thus can move and be gathered in the surface of silicon chip;
C () then carries out etching processing to silicon chip, etch away the metal impurities layer being gathered in silicon chip surface; Wherein, etching operation before making herbs into wool namely prepared by battery can be placed in the etching processing of silicon chip; In etch processes, one side etches away 3 μm or 5 μm; Certainly, the thickness that one side etches away can control between 3 μm ~ 5 μm.
Then, battery process conveniently carries out spreading, rear etching, PECVD plated film, metalized, sintering, obtains battery, and through test, the open circuit voltage of this battery improves 6mV, and short-circuit current density improves 0.5mA/cm
2, photoelectric conversion efficiency improves 0.7% (absolute value).
Embodiment two
Promote a method for crystal silicon photovoltaic cell conversion efficiency, the step of the method is as follows:
A pending silicon chip is placed in darkroom by (), make it accept passage of scintillation light treatment with irradiation; Wherein, the photon energy of passage of scintillation light is greater than 1.1eV, and adopts that wavelength is 800nm, irradiation intensity is 3000W/m
2light process 50ms; The object of this step is: break up iron boron complex, makes interstitial iron metal impurities be separated into the metal ion of band+divalent or+3 valencys;
B () applies an alternating magnetic field to silicon chip again, and guarantee that the magnetic direction of this alternating magnetic field is parallel to the normal direction of silicon chip; Magnetic field intensity is 7 teslas, and the number of times that magnetizes is 20 times; The object of this step is: utilize metal ion under the effect of space magnetic field, have the feature of displacement, thus can move and be gathered in the surface of silicon chip;
C () then carries out etching processing to silicon chip, etch away the metal impurities layer being gathered in silicon chip surface; Wherein, etching operation before making herbs into wool namely prepared by battery can be placed in the etching processing of silicon chip; In etch processes, one side etches away 3 μm or 5 μm; Certainly, the thickness that one side etches away can control between 3 μm ~ 5 μm.
Then, battery process conveniently carries out spreading, rear etching, PECVD plated film, metalized, sintering, obtains battery, and through test, the open circuit voltage of this battery improves 5mV, and short-circuit current density improves 0.4mA/cm
2, photoelectric conversion efficiency improves 0.6% (absolute value).
The handling object of this method is not limited to polysilicon chip and monocrystalline silicon piece, and the metal impurities being also applicable to other sheetings are purified.
Above-described specific embodiment; technical problem, technical scheme and beneficial effect that the present invention solves are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. promote a method for crystal silicon photovoltaic cell conversion efficiency, it is characterized in that the step of the method is as follows:
A pending silicon chip is placed in darkroom by (), make it accept passage of scintillation light treatment with irradiation;
B () applies an electric field to silicon chip again, and guarantee that the direction of an electric field of this electric field is parallel to the normal direction of silicon chip;
C () then carries out etching processing to silicon chip, etch away the metal impurities layer being gathered in silicon chip surface.
2. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, it is characterized in that: in described step (a), the photon energy of passage of scintillation light is greater than 1.1eV.
3. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, is characterized in that: in described step (b), and the application time applying electric field is 10s ~ 20min.
4. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, is characterized in that: in described step (c), is placed in etching operation before making herbs into wool namely prepared by battery to the etching processing of silicon chip.
5. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, it is characterized in that: in described step (c), in etch processes, one side etches away 3 ~ 5 μm.
6. promote a method for crystal silicon photovoltaic cell conversion efficiency, it is characterized in that the step of the method is as follows:
A pending silicon chip is placed in darkroom by (), make it accept passage of scintillation light treatment with irradiation;
B () applies an alternating magnetic field to silicon chip again, and guarantee that the magnetic direction of this alternating magnetic field is parallel to the normal direction of silicon chip;
C () then carries out etching processing to silicon chip, etch away the metal impurities layer being gathered in silicon chip surface.
7. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, it is characterized in that: in described step (a), the photon energy of passage of scintillation light is greater than 1.1eV.
8. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, is characterized in that: in described step (b), and the application time applying alternating magnetic field is 10s ~ 20min.
9. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, is characterized in that: in described step (c), is placed in etching operation before making herbs into wool namely prepared by battery to the etching processing of silicon chip.
10. the method for lifting crystal silicon photovoltaic cell conversion efficiency according to claim 1, it is characterized in that: in the etch processes of described step (c), one side etches away 3 ~ 5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410778058.9A CN104538493A (en) | 2014-12-15 | 2014-12-15 | Method for improving conversion efficiency of crystalline silicon photovoltaic cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410778058.9A CN104538493A (en) | 2014-12-15 | 2014-12-15 | Method for improving conversion efficiency of crystalline silicon photovoltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104538493A true CN104538493A (en) | 2015-04-22 |
Family
ID=52853992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410778058.9A Pending CN104538493A (en) | 2014-12-15 | 2014-12-15 | Method for improving conversion efficiency of crystalline silicon photovoltaic cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104538493A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017512A1 (en) * | 1980-05-07 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Semiconductor impurities gettering - by interference producing element in ray path from pulsed laser |
| JPH02302039A (en) * | 1989-05-16 | 1990-12-14 | Fujitsu Ltd | Gettering |
| JPH11238738A (en) * | 1998-02-20 | 1999-08-31 | Shin Etsu Handotai Co Ltd | Method for eliminating heavy metal impurities in semiconductor wafer and manufacture thereof |
| JP2009252759A (en) * | 2008-04-01 | 2009-10-29 | Shin Etsu Handotai Co Ltd | Silicon single crystal wafer for semiconductor device and manufacturing method thereof |
-
2014
- 2014-12-15 CN CN201410778058.9A patent/CN104538493A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017512A1 (en) * | 1980-05-07 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Semiconductor impurities gettering - by interference producing element in ray path from pulsed laser |
| JPH02302039A (en) * | 1989-05-16 | 1990-12-14 | Fujitsu Ltd | Gettering |
| JPH11238738A (en) * | 1998-02-20 | 1999-08-31 | Shin Etsu Handotai Co Ltd | Method for eliminating heavy metal impurities in semiconductor wafer and manufacture thereof |
| JP2009252759A (en) * | 2008-04-01 | 2009-10-29 | Shin Etsu Handotai Co Ltd | Silicon single crystal wafer for semiconductor device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO1987002513A1 (en) | Solar cell | |
| TWI536597B (en) | A low cost, suitable for mass production of back contact with the battery production methods | |
| Xu et al. | Application of phosphorus diffusion gettering process on upgraded metallurgical grade Si wafers and solar cells | |
| CN105390555A (en) | Full-back-electrode solar cell structure and preparation method therefor | |
| Zhang et al. | Characteristics and value enhancement of cast silicon ingots | |
| Yue et al. | Antireflective nanostructures fabricated by reactive ion etching method on pyramid-structured silicon surface | |
| Xu et al. | A systematically integrated recycling and upgrading technology for waste crystalline silicon photovoltaic module | |
| Xu et al. | High-performance MoO x/n-Si heterojunction NIR photodetector with aluminum oxide as a tunneling passivation interlayer | |
| CN103022265A (en) | Solar cells and diffusion method thereof | |
| Dikshit et al. | Optimization of back ITO layer as the sandwiched reflector for exploiting longer wavelength lights in thin and flexible (30 µm) single junction c-Si solar cells | |
| MacDonald | The emergence of n-type silicon for solar cell manufacture | |
| Zhang et al. | Preparing Cu2ZnSn (SxSe1− x) 4 thin-film solar cells with front band gap grading by plasma sulfurization | |
| CN102270668B (en) | Heterojunction solar cell and preparation method thereof | |
| Wang | Technology, Manufacturing and Grid Connection of Photovoltaic Solar Cells | |
| CN104538493A (en) | Method for improving conversion efficiency of crystalline silicon photovoltaic cell | |
| Yang et al. | The materials characteristic and the efficiency degradation of solar cells from solar grade silicon from a metallurgical process route | |
| CN103943693B (en) | Manufacturing method of back contact-type solar cell structure based on P-type silicon substrate | |
| US20190371954A1 (en) | Solar cell and preparation method thereof | |
| TW201737505A (en) | Metal dendrite-free solar cell | |
| CN102280501B (en) | Silicon-based buried contact film solar cell | |
| CN104952961B (en) | A kind of n CdSxSe1‑xFilm/Graphene schottky junction solar cell | |
| Hofstetter et al. | Towards the tailoring of P diffusion gettering to as-grown silicon material properties | |
| CN205231078U (en) | Full back of body utmost point solar battery structure | |
| Yoo et al. | Solar cell fabrication using two-step textured quasi-single crystalline silicon by alkaline and RIE texturing processes | |
| US20190096987A1 (en) | N-type polysilicon crystal, manufacturing method thereof, and n-type polysilicon wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150422 |