CN104537983A - Pixel circuit, driving method of pixel circuit and display device - Google Patents

Pixel circuit, driving method of pixel circuit and display device Download PDF

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CN104537983A
CN104537983A CN201410841458.XA CN201410841458A CN104537983A CN 104537983 A CN104537983 A CN 104537983A CN 201410841458 A CN201410841458 A CN 201410841458A CN 104537983 A CN104537983 A CN 104537983A
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transistor
gate drive
drive signal
image element
element circuit
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CN104537983B (en
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木素真
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

The invention provides a pixel circuit, a driving method of the pixel circuit and a display device, and belongs to the technical field of organic light emitting diode display. The pixel circuit can solve the problem that an existing pixel circuit cannot avoid threshold voltage shift. The pixel circuit comprises a switch transistor, a driver transistor, a storage capacitor, an organic light emitting diode, an initialization module, a compensation module and a light-emitting control module, wherein the initialization module is used for resetting the voltages at the two ends of the storage capacitor under control of the upper level of grid drive signals and first control signals, the compensation module is used for carrying out voltage compensation on one end, connected with the grid electrode of the drive transistor, of the storage capacitor under the control of the upper level of grid drive signals, and the light-emitting control module is used for determining whether currents pass thorough the organic light emitting diode under the control of second control signals.

Description

Image element circuit and driving method, display device
Technical field
The invention belongs to organic light-emitting diode display technical field, be specifically related to a kind of image element circuit and driving method, display device.
Background technology
Organic Light Emitting Diode (OLED) display device has the plurality of advantages such as visual angle is large, fast response time, contrast are high, energy-conservation, strong adaptability, therefore obtains and applies more and more widely.The most basic image element circuit for organic LED display device is 2T1C structure.As shown in Figure 1, the image element circuit of 2T1C structure comprises switching transistor T1, driving transistors T2, memory capacitance C, Organic Light Emitting Diode OLED, these devices can be luminous under the control of gate drive signal Sn at the corresponding levels, data-signal Vdata, the first supply voltage Vdd (high-voltage power supply signal), second source voltage Vss (low-tension supply signal, as ground connection).Wherein, the luminous intensity of Organic Light Emitting Diode OLED is determined by the electric current I by it, and this electric current I equals the electric current by driving transistors T2.Because driving transistors T2 works in the saturated condition, therefore there is formula: I=K (Vgs-Vth) 2, in formula, K is coefficient, and Vgs is the gate source voltage of driving transistors T2, and by control data signal Vdata adjustable gate source voltage Vgs, and then adjustment electric current I, namely determine the luminosity of Organic Light Emitting Diode OLED.But from formula, electric current I is also relevant with the threshold voltage vt h of driving transistors T2, and along with the use of driving transistors T2, its threshold voltage vt h can gradually change (threshold voltage shift), thus cause the luminosity of Organic Light Emitting Diode OLED to produce unpredictable change, affect display effect.
Summary of the invention
The present invention is directed to the problem that existing image element circuit can not avoid threshold voltage shift, a kind of image element circuit eliminating threshold voltage shift impact is provided.
The technical scheme that solution the technology of the present invention problem adopts is a kind of image element circuit, and it comprises: switching transistor, driving transistors, memory capacitance, Organic Light Emitting Diode, and:
Initialization module, for resetting the voltage at memory capacitance two ends under the control of upper level gate drive signal and the first control signal;
Compensating module, under the control of upper level gate drive signal, voltage memory capacitance being connected to one end of drive transistor gate compensates;
Whether light emitting control module, pass through Organic Light Emitting Diode for electric current of making decision in the control of the second control signal.
Preferably, the grid of described switching transistor connects gate drive signal at the corresponding levels, the first pole connection data signal, and the second pole connects the first pole of memory capacitance; Second pole of described memory capacitance connects the grid of driving transistors; First pole of described driving transistors connects the first supply voltage, and the second pole connects light emitting control module and compensating module; The first end of described Organic Light Emitting Diode connects light emitting control module, and the second end connects second source voltage and compensating module.
Further preferably, described initialization module comprises the first transistor, transistor seconds, wherein, the grid of described the first transistor connects upper level gate drive signal, first pole connects initial voltage, second pole connects the first end of memory capacitance, and wherein said initial voltage can make driving transistors conducting; The grid of described transistor seconds connects the first control signal, and the first pole connects initial voltage, and the second pole connects the second end of memory capacitance.
Further preferably, described compensating module comprises third transistor, and wherein, the grid of described third transistor connects upper level gate drive signal, and the first pole connects the second pole of driving transistors, and the second pole of third transistor connects second source voltage.
Further preferably, described light emitting control module comprises the 4th transistor, and wherein, the grid of described 4th transistor connects the second control signal, first pole connects the second pole of driving transistors, and the second pole of the 4th transistor is connected with the first pole of OLED.
Further preferably, described driving transistors, switching transistor, the first transistor, transistor seconds, third transistor, the 4th transistor are N-type TFT.
Further preferably, described driving transistors is N-type TFT; Described switching transistor, the first transistor, transistor seconds, third transistor, the 4th transistor are P-type TFT.
The technical scheme that solution the technology of the present invention problem adopts is a kind of driving method of image element circuit, and wherein, described image element circuit is above-mentioned image element circuit, and the driving method of described image element circuit comprises:
Initial phase, upper level gate drive signal and the first control signal control initialization module and open, and are reset by the voltage at memory capacitance two ends;
Compensated stage, upper level gate drive signal control and compensation module is opened, and voltage memory capacitance being connected to one end of drive transistor gate compensates;
Write phase, gate drive signal gauge tap transistor at the corresponding levels is opened, and makes data-signal write memory capacitance;
Glow phase, the second control signal controls light emitting control module and opens, and makes organic light-emitting diode.
Preferably, the image element circuit of described image element circuit to be above-mentioned whole transistor be all N-type TFT, the driving method of described image element circuit specifically comprises:
Initial phase: described upper level gate drive signal, the first control signal are high level, described gate drive signal at the corresponding levels, the second control signal are low level;
Compensated stage: described upper level gate drive signal is high level, described gate drive signal at the corresponding levels, the first control signal, the second control signal are low level;
Write phase: described gate drive signal at the corresponding levels is high level, described upper level gate drive signal, the first control signal, the second control signal are low level;
Glow phase: described second control signal is high level, described gate drive signal at the corresponding levels, upper level gate drive signal, the first control signal are low level.
Preferably, described image element circuit is above-mentioned except driving transistors, and other transistors are all the image element circuits of P-type TFT, and the driving method of described image element circuit specifically comprises:
Initial phase: described upper level gate drive signal, the first control signal are low level, described gate drive signal at the corresponding levels, the second control signal are high level;
Compensated stage: described upper level gate drive signal is low level, described gate drive signal at the corresponding levels, the first control signal, the second control signal are high level;
Write phase: described gate drive signal at the corresponding levels is low level, described upper level gate drive signal, the first control signal, the second control signal are high level;
Glow phase: described second control signal is low level, described gate drive signal at the corresponding levels, upper level gate drive signal, the first control signal are high level.
The technical scheme that solution the technology of the present invention problem adopts is a kind of display device, and it comprises above-mentioned image element circuit.
Be provided with compensating module in image element circuit of the present invention, thus the threshold voltage can eliminating driving transistors is on the impact of display, improves display effect, avoids the impact of threshold voltage shift; Meanwhile, wherein number of modules is all controlled by upper level gate drive signal, and gate drive signal at different levels originally just has in display device, utilizes these signals to control, and can ensure that the structure of image element circuit is simple, be easy to realize.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of existing image element circuit;
Fig. 2 is the Module Division schematic diagram of a kind of image element circuit of embodiments of the invention;
Fig. 3 is the schematic diagram of a kind of image element circuit of embodiments of the invention;
Fig. 4 is the driver' s timing figure of a kind of image element circuit of embodiments of the invention;
Wherein, Reference numeral is: C, memory capacitance; M1, the first transistor; M2, transistor seconds; M3, third transistor; M4, the 4th transistor; T1, switching transistor; T2, driving transistors; OLED, Organic Light Emitting Diode; Vc, initial voltage; Vdata, data-signal; Vdd, the first supply voltage; Vss, second source voltage; Sn, gate drive signal at the corresponding levels; Sn-1, upper level gate drive signal.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1:
The present embodiment provides a kind of image element circuit, and as shown in Figure 2, it comprises: switching transistor T1, driving transistors T2, memory capacitance C, Organic Light Emitting Diode OLED, and:
Initialization module, for resetting the voltage at memory capacitance C two ends under the control of upper level gate drive signal Sn-1 and the first control signal EM;
Compensating module, under the control of upper level gate drive signal Sn-1, voltage memory capacitance C being connected to one end of driving transistors T2 grid compensates;
Whether light emitting control module, for electric current of making decision in the control of the second control signal EN by Organic Light Emitting Diode OLED.
Wherein, gate drive signal is the signal for making each row pixel open in turn provided by gate line, because each bar grid line provides Continuity signal in turn, therefore " upper level gate drive signal Sn-1 " refers to the signal of that grid line of conducting before the gate line that this image element circuit is corresponding, namely image element circuit is except being connected with the gate line corresponding to it, is also connected with the gate line of its lastrow.
Wherein, data-signal Vdata is provided by data line, for controlling the drive singal of the luminosity of Organic Light Emitting Diode OLED.
Wherein, the first control signal EM, the second control signal EN are the signals of the image element circuit for controlling the present embodiment provided by the control line arranged separately.
Be provided with compensating module in the image element circuit of the present embodiment, thus the threshold voltage vt h that can eliminate driving transistors T2 is on the impact of display, improves display effect, avoids the impact that threshold voltage vt h drifts about; Meanwhile, wherein number of modules is all controlled by upper level gate drive signal Sn-1, and gate drive signal at different levels originally just has in display device, utilizes these signals to carry out control and can ensure that the structure of image element circuit is simple, be easy to realize.
Preferably, as shown in Figure 3, the concrete structure of above image element circuit can be as follows: the grid of switching transistor T1 connects gate drive signal Sn at the corresponding levels, the first pole connection data signal Vdata, and the second pole connects first pole of memory capacitance C; Second pole of memory capacitance C connects the grid of driving transistors T2; First pole of driving transistors T2 connects the first supply voltage Vdd, and the second pole connects light emitting control module and compensating module; The first end of Organic Light Emitting Diode OLED connects light emitting control module, and the second end connects second source voltage Vss and compensating module.
Wherein, the first supply voltage Vdd and second source voltage Vss refers to two supply voltages for driving Organic Light Emitting Diode OLED luminescence, and they are respectively used to the anode and the negative electrode that are connected with OLED OLED.Typically, the first supply voltage Vdd is high voltage, and for being connected with the anode of OLED OLED, second source voltage Vss is low-voltage (as being ground connection), for being connected with the negative electrode of OLED OLED.
Preferred, initialization module comprises the first transistor M1, transistor seconds M2, wherein, the grid of the first transistor M1 connects upper level gate drive signal Sn-1, first pole connects initial voltage Vc, second pole connects the first end of memory capacitance C, and wherein initial voltage Vc can make driving transistors T2 conducting; The grid of transistor seconds M2 connects the first control signal EM, and the first pole connects initial voltage Vc, and the second pole connects second end of memory capacitance C.
Wherein, " initial voltage Vc " for carrying out initialization to memory capacitance C, its value should be enough large, thus can make driving transistors T2 conducting.
Preferred, compensating module comprises third transistor M3, and wherein, the grid of third transistor M3 connects upper level gate drive signal Sn-1, and the first pole connects second pole of driving transistors T2, and second pole of third transistor M3 connects second source voltage Vss.
Preferred, light emitting control module comprises the 4th transistor M4, and wherein, the grid of the 4th transistor M4 connects the second control signal EN, first pole connects second pole of driving transistors T2, and second pole of the 4th transistor M4 is connected with first pole of OLED OLED.
Preferred, above-mentioned driving transistors T2 is N-type TFT; And switching transistor T1, the first transistor M1, transistor seconds M2, third transistor M3, the 4th transistor M4 can unify to adopt N-type TFT, or also can unify to adopt P-type TFT.
The present embodiment also provides the driving method of more than one image element circuits, and it comprises:
Initial phase, upper level gate drive signal Sn-1 and the first control signal EM controls initialization module and opens, and is reset by the voltage at memory capacitance C two ends;
Compensated stage, upper level gate drive signal Sn-1 control and compensation module is opened, and voltage memory capacitance C being connected to one end of driving transistors T2 grid compensates;
Write phase, gate drive signal Sn gauge tap transistor T1 at the corresponding levels opens, and makes data-signal Vdata write memory capacitance C;
Glow phase, the second control signal EN controls light emitting control module and opens, and makes Organic Light Emitting Diode OLED luminous.
Preferably, below in conjunction with image element circuit concrete above, the driving method of circuit and working method are described in detail.Wherein, the image element circuit being N-type TFT with driving transistors T2, switching transistor T1, the first transistor M1, transistor seconds M2, third transistor M3, the 4th transistor M4 is described as an example, as shown in Figure 4, its driving method specifically comprises:
T1 initial phase: upper level gate drive signal Sn-1, the first control signal EM are high level, gate drive signal Sn at the corresponding levels, the second control signal EN are low level.
In this stage, upper level gate drive signal Sn-1 and the first control signal EM is high level, therefore the first transistor M1, transistor seconds M2, third transistor M3 conducting, initial voltage Vc imports memory capacitance C two ends simultaneously, and memory capacitance C two ends no-voltage is poor.Meanwhile, initial voltage Vc is enough large, therefore can make driving transistors T2 conducting.
T2 compensated stage: upper level gate drive signal Sn-1 is high level, gate drive signal Sn at the corresponding levels, the first control signal EM, the second control signal EN are low level.
In this stage, the first control signal EM becomes low level, therefore transistor seconds M2 turns off, and b point voltage is no longer fixed to initial voltage Vc.Owing to there is the reasons such as leakage current, therefore second end of memory capacitance C can be discharged gradually by third transistor M3, thus b point voltage is reduced gradually.When the gate source voltage Vgs of driving transistors T2 is reduced to threshold voltage vt h, driving transistors T2 turns off, and b point voltage no longer changes.Because driving transistors T2 is N-type TFT, therefore its gate source voltage Vgs equals grid voltage (b point voltage) deducts drain voltage (second source voltage Vss), obtain thus when gate source voltage Vgs is Vth, b point voltage should be (Vss+Vth).In the above process, the first end of memory capacitance C still connects initial voltage Vc by the first transistor M1, therefore a point voltage remains Vc, thus between memory capacitance C two ends, the voltage difference of (namely between a point and b point) is Vc-(Vss+Vth).
T3 write phase: gate drive signal Sn at the corresponding levels is high level, upper level gate drive signal Sn-1, the first control signal EM, the second control signal EN are low level.
In this stage, gate drive signal Sn at the corresponding levels is high level, thus data-signal Vdata is loaded into the first end (a point) of memory capacitance C by switching transistor T1, due to the bootstrap effect of memory capacitance C, therefore the voltage difference at its two ends should remain unchanged, also there is corresponding change in b point voltage thus, becomes Vdata-Vc+ (Vss+Vth).
T4 glow phase: the second control signal EN is high level, gate drive signal Sn at the corresponding levels, upper level gate drive signal Sn-1, the first control signal EM are low level.
In this stage, the second control signal EN is high level, thus makes the 4th transistor M4 conducting, and Organic Light Emitting Diode OLED starts luminescence.Now, the grid voltage of driving transistors T2 is Vdata-Vc+ (Vss+Vth), and drain voltage is Vss, it can thus be appreciated that by its electric current be:
I=K(Vgs-Vth) 2=K(Vdata-Vc+Vss+Vth-Vss-Vth) 2=K(Vdata-Vc) 2
This electric current namely by the electric current of Organic Light Emitting Diode OLED, which determines the brightness of Organic Light Emitting Diode OLED.Visible, electric current by Organic Light Emitting Diode OLED in this stage is relevant with data-signal Vdata, and have nothing to do with the threshold voltage vt h of driving transistors T2, thus achieve the compensation to threshold voltage vt h, accurately can control the brightness of Organic Light Emitting Diode OLED.
Obviously, although above driving method is all that N-type TFT is introduced for whole transistor, but be to be understood that, be N-type TFT according to driving transistors T2, and the mode that switching transistor T1, the first transistor M1, transistor seconds M2, third transistor M3, the 4th transistor M4 are P-type TFT is also feasible, difference is only now to need the low and high level by all drive singal all to reverse.Concrete, driving method now comprises:
Initial phase: upper level gate drive signal Sn-1, the first control signal EM are low level, gate drive signal Sn at the corresponding levels, the second control signal EN are high level;
Compensated stage: upper level gate drive signal Sn-1 is low level, gate drive signal Sn at the corresponding levels, the first control signal EM, the second control signal EN are high level;
Write phase: gate drive signal Sn at the corresponding levels is low level, upper level gate drive signal Sn-1, the first control signal EM, the second control signal EN are high level;
Glow phase: the second control signal EN is low level, gate drive signal Sn at the corresponding levels, upper level gate drive signal Sn-1, the first control signal EM are high level.
The present embodiment also provides a kind of display device, and it comprises above-mentioned image element circuit.
That is, available multiple above-mentioned image element circuit and corresponding signal wire form the display device carrying out showing; Certainly, also comprise other known elements such as substrate, driving chip, power supply in this display device, be not described in detail at this.
Concrete, this display device can be: any product or parts with Presentation Function such as Electronic Paper, oled panel, mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.

Claims (11)

1. an image element circuit, comprising: switching transistor, driving transistors, memory capacitance, Organic Light Emitting Diode, is characterized in that, described image element circuit also comprises:
Initialization module, for resetting the voltage at memory capacitance two ends under the control of upper level gate drive signal and the first control signal;
Compensating module, under the control of upper level gate drive signal, voltage memory capacitance being connected to one end of drive transistor gate compensates;
Whether light emitting control module, pass through Organic Light Emitting Diode for electric current of making decision in the control of the second control signal.
2. image element circuit according to claim 1, is characterized in that,
The grid of described switching transistor connects gate drive signal at the corresponding levels, the first pole connection data signal, and the second pole connects the first pole of memory capacitance;
Second pole of described memory capacitance connects the grid of driving transistors;
First pole of described driving transistors connects the first supply voltage, and the second pole connects light emitting control module and compensating module;
The first end of described Organic Light Emitting Diode connects light emitting control module, and the second end connects second source voltage and compensating module.
3. image element circuit according to claim 2, is characterized in that, described initialization module comprises the first transistor, transistor seconds, wherein,
The grid of described the first transistor connects upper level gate drive signal, and the first pole connects initial voltage, and the second pole connects the first end of memory capacitance, and wherein said initial voltage can make driving transistors conducting;
The grid of described transistor seconds connects the first control signal, and the first pole connects initial voltage, and the second pole connects the second end of memory capacitance.
4. image element circuit according to claim 3, is characterized in that, described compensating module comprises third transistor, wherein,
The grid of described third transistor connects upper level gate drive signal, and the first pole connects the second pole of driving transistors, and the second pole of third transistor connects second source voltage.
5. image element circuit according to claim 4, is characterized in that, described light emitting control module comprises the 4th transistor, wherein,
The grid of described 4th transistor connects the second control signal, and the first pole connects the second pole of driving transistors, and the second pole of the 4th transistor is connected with the first pole of OLED.
6. image element circuit according to claim 5, is characterized in that,
Described driving transistors, switching transistor, the first transistor, transistor seconds, third transistor, the 4th transistor are N-type TFT.
7. image element circuit according to claim 5, is characterized in that,
Described driving transistors is N-type TFT;
Described switching transistor, the first transistor, transistor seconds, third transistor, the 4th transistor are P-type TFT.
8. a driving method for image element circuit, is characterized in that, described image element circuit comprises for the image element circuit in claim 1 to 7 described in any one, the driving method of described image element circuit:
Initial phase, upper level gate drive signal and the first control signal control initialization module and open, and are reset by the voltage at memory capacitance two ends;
Compensated stage, upper level gate drive signal control and compensation module is opened, and voltage memory capacitance being connected to one end of drive transistor gate compensates;
Write phase, gate drive signal gauge tap transistor at the corresponding levels is opened, and makes data-signal write memory capacitance;
Glow phase, the second control signal controls light emitting control module and opens, and makes organic light-emitting diode.
9. the driving method of image element circuit according to claim 8, is characterized in that, described image element circuit is image element circuit according to claim 6, and the driving method of described image element circuit specifically comprises:
Initial phase: described upper level gate drive signal, the first control signal are high level, described gate drive signal at the corresponding levels, the second control signal are low level;
Compensated stage: described upper level gate drive signal is high level, described gate drive signal at the corresponding levels, the first control signal, the second control signal are low level;
Write phase: described gate drive signal at the corresponding levels is high level, described upper level gate drive signal, the first control signal, the second control signal are low level;
Glow phase: described second control signal is high level, described gate drive signal at the corresponding levels, upper level gate drive signal, the first control signal are low level.
10. the driving method of image element circuit according to claim 8, is characterized in that, described image element circuit is image element circuit according to claim 7, and the driving method of described image element circuit specifically comprises:
Initial phase: described upper level gate drive signal, the first control signal are low level, described gate drive signal at the corresponding levels, the second control signal are high level;
Compensated stage: described upper level gate drive signal is low level, described gate drive signal at the corresponding levels, the first control signal, the second control signal are high level;
Write phase: described gate drive signal at the corresponding levels is low level, described upper level gate drive signal, the first control signal, the second control signal are high level;
Glow phase: described second control signal is low level, described gate drive signal at the corresponding levels, upper level gate drive signal, the first control signal are high level.
11. 1 kinds of display device, is characterized in that, comprising:
Image element circuit in claim 1 to 7 described in any one.
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