CN104536505A - High-temperature voltage stabilizer - Google Patents
High-temperature voltage stabilizer Download PDFInfo
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- CN104536505A CN104536505A CN201410849929.1A CN201410849929A CN104536505A CN 104536505 A CN104536505 A CN 104536505A CN 201410849929 A CN201410849929 A CN 201410849929A CN 104536505 A CN104536505 A CN 104536505A
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Abstract
The invention provides a high-temperature voltage stabilizer which comprises a constant current source circuit used for outputting constant currents, a source electrode follower used for providing load currents for the high-temperature voltage stabilizer and reducing the output impedance of a buffer, and a voltage divider used for conducting overvoltage protection on the source electrode follower. The constant current source circuit and the source electrode follower are connected in parallel and then connected with the voltage divider in parallel, wide bandgap semiconductor devices are adopted as field-effect tubes in the constant current source circuit, the source electrode follower and the voltage divider. The wide bandgap semiconductor devices are adopted as the field-effect tubes in the high-temperature voltage stabilizer, the work temperature can reach 500 DEG C to meet the requirement for high-temperature application, and the problem that a circuit fails due to damage of common semiconductor devices at high temperatures in the situation of high temperatures and other extreme situations is effectively solved; the feasibility of the circuit design and the stability of output voltages are verified through high-temperature tests, the high-temperature voltage stabilizer can be used for supplying power to a high-temperature circuit system, and thus wireless sensing, communication and data transmission under high temperatures are achieved.
Description
Technical field
The invention belongs to electronic technology field, specifically a kind of high temperature voltage stabilizer.
Background technology
In electronic system, voltage stabilizer is a very important core devices.Stable voltage source is absolutely necessary for the performance index of the normal work and maintenance electronic system that ensure circuit.Voltage regulation unit in usual electronic system be adopt Zener diode reference voltage is provided realize voltage stabilizing function.But due to restriction physically, when electronic equipment needs the temperature be operated in more than 250 DEG C time, traditional silica-based Zener diode cannot meet this temperature requirement.Under being likely operated in higher temperature based on the Zener diode of wide bandgap semiconductor (silit), but the silit Zener diode that can at high temperature work also is in the experimental phase at present.Meanwhile, due to the raising of energy gap, the reverse turn-on voltages (voltage stabilizing value) of silit Zener diode is more than 25V, and the electronic chip be therefore difficult to as input voltage is the routines such as 3.3V, 5V, 12V, 15V is powered.
Summary of the invention
For the deficiency that prior art exists, the invention provides a kind of high temperature voltage stabilizer.
Technical scheme of the present invention is:
A kind of high temperature voltage stabilizer, comprising:
For exporting the constant-current source circuit of steady current;
For providing load current and the source follower as impact damper reduction output impedance for high temperature voltage stabilizer;
For the voltage divider to source follower overvoltage protection;
After constant-current source circuit is in parallel with source follower, then parallel voltage divider;
Field effect transistor in constant-current source circuit, source follower, voltage divider all adopts wide band gap semiconductor device.
Described constant-current source circuit comprises the first technotron, the first adjusting resistance, the second adjusting resistance and the 4th technotron;
The source electrode of drain electrode cascade the 4th technotron of the first technotron, the grid of the 4th technotron connects the source electrode of the first technotron, the source electrode of the first technotron is also connected with one end of the first adjusting resistance with the tie point of the grid of the 4th technotron, the other end of the first adjusting resistance connects the grid of the first technotron, one end ground connection of the second adjusting resistance, the other end of the second adjusting resistance is connected to the tie point of the other end of the first adjusting resistance and the grid of the first technotron.
Described source follower comprises the 3rd technotron and the 3rd adjusting resistance;
The grid of the 3rd technotron is connected between the other end of the second adjusting resistance and the grid of the first technotron, the source electrode of the 3rd technotron connects one end of the 3rd adjusting resistance, one end of 3rd adjusting resistance is connected to one end of the second adjusting resistance ground connection, and the drain electrode of the 3rd technotron connects the drain electrode of the 4th technotron.
Described voltage divider comprises the second technotron, the 4th adjusting resistance and the 5th adjusting resistance;
The source electrode of the second technotron is connected to the tie point of the drain electrode of the 3rd technotron and the drain electrode of the 4th technotron, as the input end of high temperature voltage stabilizer after one end of 4th adjusting resistance is connected with the drain electrode of the second technotron, the other end of the 4th adjusting resistance connects one end of the 5th adjusting resistance, as the output terminal of high temperature voltage stabilizer after the source electrode of the 3rd technotron is connected with the other end of the 5th adjusting resistance with the tie point of one end of the 3rd adjusting resistance, the grid of the second technotron is connected between the other end of the 4th adjusting resistance and one end of the 5th adjusting resistance.
Beneficial effect:
(1) the present invention is by improving the constant-current characteristics of constant current source further at drain electrode cascade the 4th technotron of the first technotron, the source electrode of the drain electrode of the first technotron with the 4th technotron is connected, the grid of the 4th technotron is connected to the source electrode of the first technotron, formed novel constant-current source circuit with this, make drain electrode output current more constant;
(2) the present invention adopts the voltage divider that the second technotron and the 4th adjusting resistance, the 5th adjusting resistance are formed, by the resistance value ratio of the 4th adjusting resistance, the 5th adjusting resistance, change and adjust the voltage difference between the drain electrode of the 3rd technotron and source electrode, realizing the overvoltage protection to the 3rd technotron;
(3) technotron in circuit of the present invention all adopts wide band gap semiconductor device, working temperature can reach 500 degrees Celsius, to meet the requirement of high temperature application, effectively solve the at high temperature damage of general semiconductor device under high temperature or other extreme cases and cause circuit malfunction problem;
(4) feasibility designed by high temperature test proof scheme and the stability of output voltage, this high temperature voltage stabilizer can be used for the power supply to high temperature circuit system, thus the wireless sensing under realizing high temperature, communication and data transmission.
Accompanying drawing explanation
Fig. 1 is the high temperature voltage regulator circuit schematic diagram of the specific embodiment of the invention, wherein, and 1-constant-current source circuit, 2-source follower, 3-voltage divider;
Fig. 2 be the specific embodiment of the invention high temperature voltage regulator circuit 450 DEG C, the setting value of output voltage be the condition of 10V under simulation result;
Fig. 3 be the specific embodiment of the invention high temperature voltage regulator circuit 450 DEG C, the setting value of output voltage be the condition of 15V under simulation result;
Fig. 4 be the specific embodiment of the invention high temperature voltage regulator circuit 450 DEG C, the setting value of output voltage be the condition of 20V under simulation result;
Fig. 5 is the output voltage of high temperature voltage stabilizer under the different temperatures of the specific embodiment of the invention, different DC input voitage, wherein, the output voltage that curve a is probe temperature when being 450 DEG C, the output voltage that curve b is probe temperature when being 300 DEG C, the output voltage that curve c is probe temperature when being room temperature 25 DEG C.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.
A kind of high temperature voltage stabilizer, as shown in Figure 1, comprising:
For exporting the constant-current source circuit 1 of steady current;
For providing load current and the source follower 2 as impact damper reduction output impedance for high temperature voltage stabilizer;
For the voltage divider 3 to source follower 2 overvoltage protection;
After constant-current source circuit 1 is in parallel with source follower 2, then parallel voltage divider 3;
Field effect transistor in constant-current source circuit 1, source follower 2, voltage divider 3 all adopts wide band gap semiconductor device, adopts the high-temperature device of silit or this kind of exotic material of gallium nitride in present embodiment.
Constant-current source circuit 1 comprises the first technotron, the first adjusting resistance, the second adjusting resistance and the 4th technotron;
The source S of drain D cascade the 4th technotron J4 of the first technotron J1, the grid G of the 4th technotron J4 connects the source S of the first technotron J1, the source S of the first technotron J1 is also connected with one end of the first adjusting resistance R1 with the tie point of the grid G of the 4th technotron J4, the other end of the first adjusting resistance R1 connects the grid G of the first technotron J1, one end ground connection of the second adjusting resistance R2, the other end of the second adjusting resistance R2 is connected to the tie point of the other end of the first adjusting resistance R1 and the grid G of the first technotron J1.
Source follower 2 comprises the 3rd technotron J3 and the 3rd adjusting resistance R3;
The grid G of the 3rd technotron J3 is connected between the other end of the second adjusting resistance R2 and the grid G of the first technotron J1, the source S of the 3rd technotron J3 connects one end of the 3rd adjusting resistance R3, one end of 3rd adjusting resistance R3 is connected to one end of the second adjusting resistance R2 ground connection, and the drain D of the 3rd technotron J3 connects the drain D of the 4th technotron J4.
Voltage divider 3 comprises the second technotron J2, the 4th adjusting resistance R4 and the 5th adjusting resistance R5;
The source S of the second technotron J2 is connected to the tie point of the drain D of the 3rd technotron J3 and the drain D of the 4th technotron J4, as the input end Input of high temperature voltage stabilizer after one end of 4th adjusting resistance R4 is connected with the drain D of the second technotron J2, the other end of the 4th adjusting resistance R4 connects one end of the 5th adjusting resistance R5, as the output end vo ut of high temperature voltage stabilizer after the source S of the 3rd technotron J3 is connected with the other end of the 5th adjusting resistance R5 with the tie point of one end of the 3rd adjusting resistance R3, the grid of the second technotron J2 is connected between the other end of the 4th adjusting resistance R4 and one end of the 5th adjusting resistance R5.
Present embodiment adopts silit technotron (SiC JFET), and its working temperature can reach more than 500 degrees Celsius, thus ensures the normal work at high temperature of whole voltage stabilizer.J1 and R1 in FIG forms a constant current source, and adjusting resistance R1 makes J1 be operated in saturation region, thus still keeps the drain current of J1 constant when input voltage changes.Steady current flows through R2 and on this resistance, provides a reference voltage.Continuous print adjustment can be carried out to reference voltage by the resistance changing R2.J3 and resistance R3 forms source follower, and its effect has two aspects: one is for voltage stabilizer provides load current, and two is reduce output impedance as impact damper.When input voltage differs larger with output voltage, the voltage divider be made up of J2, R4 and R5 can be added in circuit, to reduce the drain-to-source voltage across J3, thus avoid SiC JFET at high temperature breakdown.The distribution of input and output voltage difference on J2 and J3 can be controlled by the ratio of R4 and R5 resistance.In addition, for improving the voltage regulation performance of voltage stabilizer, in constant current source, adding J4 and J1 form a kind of cascade structure, thus improve the stability of output voltage further.The mode that R1 and R2 can adopt conventional resistive to combine with thermistor exports to realize zero-temperature coefficient drift voltage, or realizes controlling output voltage according to the change of temperature.Different from the voltage stabilizer based on Zener diode, the voltage stabilizer based on SIC JFET constant current source is that to realize output voltage adjustable by adjustment R1 and R2.
Figure 2 shows that high temperature voltage regulator circuit 450 DEG C, the setting value of output voltage be 10V time simulation result.When input voltage rises to 40V from 30V, output voltage rises to 10.06V from 9.95V, and voltage knots modification is 0.11V.
Figure 3 shows that circuit is at the simulation result of 450 DEG C.The setting value of output voltage is 15V.When input voltage rises to 40V from 30V, output voltage rises to 15.12V from 14.89V, and voltage knots modification is 0.23V.
Figure 4 shows that circuit is at the simulation result of 450 DEG C.The setting value of output voltage is 20V.When input voltage rises to 40V from 30V, output voltage rises to 20.07V from 19.78V, voltage knots modification is 0.29V.
Built on hot plate by high temperature voltage stabilizer, and carry out from room temperature to the circuit test up to 450 DEG C it, test result as shown in Figure 5.
As seen from Figure 5, when DC voltage input often changes 10V, the change of output voltage is very little.When probe temperature is room temperature 25 DEG C, output voltage change 0.22V, when probe temperature is 300 DEG C, output voltage change 0.28V, when probe temperature is 450 DEG C, output voltage is changed to 0.36V.As can be seen here, the present invention has the high temperature voltage stabilizer of good linear regulation performance under achieving extreme temperature well.
Silit technotron shown in Fig. 1 can other can at high temperature work by silicon carbide MOSFET, silit MESFET, gallium nitride FET etc. field effect transistor replace, and its principle of work is consistent with present embodiment.
Claims (4)
1. a high temperature voltage stabilizer, is characterized in that: comprising:
For exporting the constant-current source circuit of steady current;
For providing load current and the source follower as impact damper reduction output impedance for high temperature voltage stabilizer;
For the voltage divider to source follower overvoltage protection;
After constant-current source circuit is in parallel with source follower, then parallel voltage divider;
Field effect transistor in constant-current source circuit, source follower, voltage divider all adopts wide band gap semiconductor device.
2. high temperature voltage stabilizer according to claim 1, is characterized in that: described constant-current source circuit comprises the first technotron, the first adjusting resistance, the second adjusting resistance and the 4th technotron;
The source electrode of drain electrode cascade the 4th technotron of the first technotron, the grid of the 4th technotron connects the source electrode of the first technotron, the source electrode of the first technotron is also connected with one end of the first adjusting resistance with the tie point of the grid of the 4th technotron, the other end of the first adjusting resistance connects the grid of the first technotron, one end ground connection of the second adjusting resistance, the other end of the second adjusting resistance is connected to the tie point of the other end of the first adjusting resistance and the grid of the first technotron.
3. high temperature voltage stabilizer according to claim 2, is characterized in that: described source follower comprises the 3rd technotron and the 3rd adjusting resistance;
The grid of the 3rd technotron is connected between the other end of the second adjusting resistance and the grid of the first technotron, the source electrode of the 3rd technotron connects one end of the 3rd adjusting resistance, one end of 3rd adjusting resistance is connected to one end of the second adjusting resistance ground connection, and the drain electrode of the 3rd technotron connects the drain electrode of the 4th technotron.
4. high temperature voltage stabilizer according to claim 3, is characterized in that: described voltage divider comprises the second technotron, the 4th adjusting resistance and the 5th adjusting resistance;
The source electrode of the second technotron is connected to the tie point of the drain electrode of the 3rd technotron and the drain electrode of the 4th technotron, as the input end of high temperature voltage stabilizer after one end of 4th adjusting resistance is connected with the drain electrode of the second technotron, the other end of the 4th adjusting resistance connects one end of the 5th adjusting resistance, as the output terminal of high temperature voltage stabilizer after the source electrode of the 3rd technotron is connected with the other end of the 5th adjusting resistance with the tie point of one end of the 3rd adjusting resistance, the grid of the second technotron is connected between the other end of the 4th adjusting resistance and one end of the 5th adjusting resistance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410849929.1A CN104536505A (en) | 2014-12-31 | 2014-12-31 | High-temperature voltage stabilizer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410849929.1A CN104536505A (en) | 2014-12-31 | 2014-12-31 | High-temperature voltage stabilizer |
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| CN104536505A true CN104536505A (en) | 2015-04-22 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3571694A (en) * | 1968-08-08 | 1971-03-23 | Honeywell Inc | Dc voltage regulator employing an fet constant current source and current flow indicator |
| CN1345423A (en) * | 1999-01-28 | 2002-04-17 | 英特尔公司 | Voltage regulator |
| US20140002050A1 (en) * | 2012-06-29 | 2014-01-02 | David J. Mitchell | Voltage regulator circuitry operable in a high temperature environment of a turbine engine |
| CN203825523U (en) * | 2014-04-30 | 2014-09-10 | 贵州航天凯山石油仪器有限公司 | High-temperature wide-input high-precision power supply |
-
2014
- 2014-12-31 CN CN201410849929.1A patent/CN104536505A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3571694A (en) * | 1968-08-08 | 1971-03-23 | Honeywell Inc | Dc voltage regulator employing an fet constant current source and current flow indicator |
| CN1345423A (en) * | 1999-01-28 | 2002-04-17 | 英特尔公司 | Voltage regulator |
| US20140002050A1 (en) * | 2012-06-29 | 2014-01-02 | David J. Mitchell | Voltage regulator circuitry operable in a high temperature environment of a turbine engine |
| CN203825523U (en) * | 2014-04-30 | 2014-09-10 | 贵州航天凯山石油仪器有限公司 | High-temperature wide-input high-precision power supply |
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Application publication date: 20150422 |
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