CN104535084A - Encapsulating method - Google Patents
Encapsulating method Download PDFInfo
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- CN104535084A CN104535084A CN201410857360.3A CN201410857360A CN104535084A CN 104535084 A CN104535084 A CN 104535084A CN 201410857360 A CN201410857360 A CN 201410857360A CN 104535084 A CN104535084 A CN 104535084A
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- Prior art keywords
- vacuum chamber
- substrate
- packing
- described substrate
- air pressure
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
Abstract
An encapsulating method comprises the steps that a substrate is formed, a micro mechanical device is arranged in the substrate; a first graphical metal layer is formed on the surface of the substrate; exhaust-gas disposal is carried out on the substrate; a handle wafer is arranged, and a second graphical metal layer is formed on the surface of the handle wafer; the first graphical metal layer of the substrate is correspondingly attached to the second graphical metal layer of the handle wafer to achieve wafer bonding. According to the encapsulating method, the vacuum degree in an encapsulated encapsulating cavity can be effectively improved, therefore the read errors of the device in the encapsulating cavity are reduced, the energy loss of the device is reduced, the stability of the device is improved, the sensitivity of the device is improved, and the quality factor of the device is improved.
Description
Technical field
The present invention relates to semiconductor applications, particularly a kind of method for packing.
Background technology
Micro-mechanical gyroscope is the inertia device for measuring object of which movement angular velocity, because it adopts MEMS (micro electro mechanical system) (Micro-Electro-Mechanical-System, MEMS) technical design and making, therefore have that volume is little, quality is light, be applicable to producing in enormous quantities and cheap feature, be widely used in consumption electronic product, as in the new industries such as digital camera, game machine, smart mobile phone, palm PC and micro navigation instrument.The preparation process of MEMS (micro electro mechanical system), the encapsulation adopting the encapsulation technology of eutectic bonding to realize micro-mechanical gyroscope more.
The structural representation that prior art adopts eutectic bonding encapsulation is shown with reference to figure 1, Fig. 1.Eutectic bonding technique comprises: in the surperficial given area of substrate 1 and handle wafer 2, adopt physical gas-phase deposition (Physical Vapor Deposition, PVD) bonding metal layer 12 and 21 is formed respectively, as aluminum metal layer-germanium metal level, aluminum metal layer-tin metal layer, copper metal layer-tin metal layer etc.; Fit relative with 21 for metal level 12 afterwards, extruding substrate 1 and handle wafer 2, simultaneously heated substrate 1 and handle wafer 2 to eutectic temperature, metal level 12 and 21 melts and merges, to realize being fixedly connected with of substrate 1 and handle wafer 2, and form cavity 3 between substrate 1 and handle wafer 2.
Traditional gyroscope mainly utilizes conservation of angular momentum principle, therefore its object that mainly not stall is dynamic, and its rotating shaft is pointed to and do not changed with the rotation of its support of carrying.And micro-mechanical gyroscope utilizes Coriolis force---the rotating object tangential force suffered when there being radial motion realizes measuring object angular velocity.Micro-mechanical gyroscope includes capacitor and inductor usually, and for capacitor and inductor, quality factor q is an important technical indicator, and quality factor is higher, and the efficiency of capacitor and inductor is just high.
But the micro-mechanical gyroscope quality factor that prior art is formed is not high enough, cannot meet technology needs.
Summary of the invention
The problem that the present invention solves is to provide a kind of method for packing, improves the quality factor of micro mechanical device.
For solving the problem, the invention provides a kind of method for packing, comprising:
Form substrate, in described substrate, be formed with micro mechanical device;
The first patterned metal layer is formed at described substrate surface;
Process is exhausted to described substrate;
There is provided handle wafer, the surface of described handle wafer is formed with second graphical metal level;
The second graphical metal level correspondence of described substrate first patterned metal layer and handle wafer is fitted, to realize wafer bonding.
Optionally, the step of described pump-down process comprises: in vacuum chamber, carry out thermal exhaust process to described substrate.
Optionally, described vacuum chamber is adopt heating plate as the vacuum chamber of thermal source, and the step of described thermal exhaust process comprises: heated by described heating plate.
Optionally, in vacuum chamber, the step that thermal exhaust process is carried out in described substrate is comprised: in exhaust treatment process, the temperature of described vacuum chamber maintains 350 DEG C within the scope of 400 DEG C.
Optionally, describedly in vacuum chamber, the step that thermal exhaust process is carried out in described substrate to be comprised: vacuum chamber internal gas pressure adopts the mode of circulation change to be exhausted process to described substrate.
Optionally, the mode of circulation change is adopted to comprise the step that described substrate is exhausted process: to vacuumize described vacuum chamber, to obtain the first air pressure; In described vacuum chamber, pass into blanket gas, to obtain the second air pressure, described first air pressure is lower than described second air pressure.
Optionally, the blanket gas that described vacuum chamber passes into comprises argon gas and nitrogen.
Optionally, the mode of described employing air pressure circulation change comprises the step that described substrate is exhausted process: in the cycle of each air pressure circulation change, and the time that described vacuum chamber keeps under the second barometric information is 2 to 4 minutes; The time kept under the first barometric information is 5 to 6 minutes.
Optionally, described vacuum chamber internal gas pressure adopts the mode of circulation change to comprise the step that described substrate is exhausted process: the scope of described air pressure circulation change is 10-10mbar to 900mbar.
Optionally, the periodicity of described air pressure circulation change is more than or equal to 2.
Optionally, form substrate, be formed in described substrate in the step of micro mechanical device, described micro mechanical device is micro-mechanical gyroscope.
Compared with prior art, technical scheme of the present invention has the following advantages:
Method for packing provided by the present invention, between the substrate that will need encapsulation and handle wafer key metal level bonding, is exhausted process to substrate, namely carries out thermal exhaust process to described substrate.Described thermal exhaust process effectively can remove the steam in region to be packaged, and high temperature can also be utilized to remove the compound of some difficult volatilizations, vacuum tightness after encapsulation in package cavity is effectively improved, thus reduce the readout error of encapsulation intraluminal device, reduce device energy loss, improve device stability, improve device sensitivity, improve the device quality factor.
Accompanying drawing explanation
Fig. 1 is the structural representation that prior art adopts eutectic bonding encapsulation.
Fig. 2 to Fig. 8 is the schematic diagram of each step of method for packing one embodiment of the present invention.
Embodiment
As stated in the Background Art, in prior art, the quality factor of micro mechanical system is not high enough, now analyzes the not high reason of quality factor: micro mechanical system needs the working environment of high vacuum usually, to reduce the impact of air resistance on micro mechanical device.In other words, the performance of the micro mechanical system worked under high vacuum environment is higher; Air resistance is less, and quality factor is higher.Therefore improve the vacuum tightness of package cavity, effectively can improve the quality factor of micro mechanical system, and then improve the performance of micro mechanical system.
For solveing the technical problem, the invention provides a kind of method for packing, comprising:
Form substrate, in described substrate, be formed with micro mechanical device;
The first patterned metal layer is formed at described substrate surface;
Process is exhausted to described substrate;
There is provided handle wafer, the surface of described handle wafer is formed with second graphical metal level;
The second graphical metal level correspondence of described substrate first patterned metal layer and handle wafer is fitted, to realize wafer bonding.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Fig. 2 to Fig. 8 is the structural representation of each step of method for packing one embodiment of the present invention.It should be noted that, the present embodiment is described for the packaging technology of micro-mechanical gyroscope, should not limit the present invention with this.
With reference to figure 2, form substrate 100, be formed with micro-mechanical gyroscope 101 in described substrate 100, on the surface, described micro-mechanical gyroscope 101 neighboring area is as the eutectic bonding region for the formation of eutectic metal in described substrate 100.
Described substrate 100 is workbenches of subsequent technique.In the present embodiment, the material of described substrate 100 can be silicon.But in other embodiments except embodiment, the material of described substrate 100 can also be selected from polysilicon or amorphous silicon; Described substrate 100 also can be selected from silicon, germanium, gallium arsenide or silicon Germanium compound; Described substrate 100 can also be selected from has epitaxial loayer or epitaxial loayer silicon-on; Described substrate 100 can also be other semiconductor materials, and the present invention does not do any restriction to this.
With reference to the cut-open view that figure 3 and Fig. 4, Fig. 4 are A-A ' line in Fig. 3, form the first patterned metal layer 102 on described substrate 100 surface, described first patterned metal layer 102 covers described eutectic bonding region.
Concrete, the step forming the first patterned metal layer 102 on described substrate 100 surface comprises:
Bonding metal layer is formed at described substrate surface; Described bonding metal layer applies photoresist layer, afterwards, after the techniques such as exposure, development, photoetching agent pattern is formed in described photoresist layer, and be bonding metal layer described in mask etching with photoresist, remove described photoresist afterwards, thus form the first patterned metal layer 102.Before the described photoresist layer of formation, first can also form one or more layers mask layer on described substrate 100 surface, above-mentioned etching technics is this area maturation process, does not repeat them here.
Described first patterned metal layer 102 realizes eutectic bonding for follow-up, and in the present embodiment, the material of described first patterned metal layer 102 is germanium, and formation process is chosen as PVD deposition.In other embodiments except the present embodiment, the material of described first patterned metal layer 102 can also be the metal such as copper, aluminium, and the metal that existing eutectic bonding technique is suitable for all can use in the present invention, and the present invention does not do any restriction to this.
With reference to figure 5, process is exhausted to described substrate 100.
Concrete, described pump-down process for carry out thermal exhaust process to described substrate 100 in vacuum chamber.Described thermal exhaust process effectively can remove the steam in region to be packaged, but also high temperature can be utilized to remove the compound of some difficult volatilizations, effectively improves the vacuum tightness in package cavity after encapsulating.
It should be noted that, described thermal exhaust process and follow-up metallic bonding step can adopt the mode of original position to complete in vacuum chamber, and the mode of ex situ also can be adopted to carry out.
Concrete, described vacuum chamber can be adopt heating plate to be the vacuum chamber of thermal source, and described thermal exhaust process can be heated by the heating plate in described vacuum chamber.Air pressure in vacuum chamber adopts the mode of circulation change to enter and is exhausted process to described substrate 100.Described vacuum chamber internal gas pressure adopts the mode of circulation change specifically to comprise: vacuumize described process vacuum chamber, to obtain the first air pressure; In described vacuum chamber, pass into blanket gas, to obtain the second air pressure, described first air pressure is lower than described second air pressure.Gas pressure in vacuum is by the first air pressure change to the second air pressure, then to return to the first air pressure be a cycle period.The vacuum environment of air pressure circulation change, vacuum chamber internal gas pressure fluctuates, the compound of the steam in packaging area and substrate 100 and difficult volatilization can be made fully to be discharged in vacuum chamber, and to be walked by gas flow passband, effectively can improve the vacuum tightness in the rear package cavity of encapsulation.
In the present embodiment, the scope of described air pressure circulation change is 10
-10mbar to 900mbar, in the cycle period of each air pressure change, the air pressure of described vacuum chamber keeps 2 to 4 minutes under high-pressure situations; Under low voltage situations, the retention time is 5 to 6 minutes.When gas pressure in vacuum is low voltage situations time, at the outer environment forming a negative pressure of substrate 100, subnormal ambient is conducive to steam in described substrate 100 and compound is diffused in vacuum chamber, under low voltage situations, need maintenance 5 to 6 minutes, the steam in substrate 100 and compound can be made fully to be discharged in vacuum chamber.When gas pressure in vacuum is high-pressure situations time, coordinate circulated gases, can play the effect of purification vacuum room, the time kept under high-pressure situations is 2 to 4 minutes.
It should be noted that, the vacuum chamber adopting air pressure circulation change is that therefore cycle period can not be less than 2 (namely cycle period is more than or equal to 2) in order to make the steam in packaging area and substrate 100 and compound fully discharge.Because the scope of air pressure circulation change is comparatively large, therefore within the time of 4 cycle periods, the steam in substrate 100 and compound can be made fully to discharge.Optionally, circulation change periodicity is 4 cycles.And adopt the vacuum environment of air pressure circulation change, also can reduce technique to equipment, the particularly requirement of vacuum equipment.
It should be noted that, in the present embodiment, described vacuum chamber retention time in infrabar situation is 5 to 6 minutes; Keep 2 to 4 minutes under high atmospheric pressure environment, described gas pressure in vacuum changes to hyperbar from infrabar situation and returns to infrabar again for once to circulate.Ability embodiment is only the example of more than one short time.In other embodiments of the invention, described thermal exhaust step also can adopt less secondary long mode to carry out, and can change according to concrete technology condition, the present invention is not restricted this.
In the present embodiment, in the process of whole pump-down process, the temperature of vacuum chamber maintains 350 DEG C within the scope of 400 DEG C.When the temperature of pump-down process higher than 350 DEG C time, quality factor can bring up to original more than 2 times.
With reference to figure 6, show quality factor and gas treatment temperatures graph of a relation.In figure, horizontal ordinate is gas treatment temperatures, ordinate is quality factor, 4 data points (61,62,63 and 64) represent 4 quality factors through the sample of different temperatures pump-down process respectively, and the curve 6 in Fig. 6 represents the fit correlation of quality factor and gas treatment temperatures.As shown in Figure 6, along with the temperature of pump-down process is elevated to 400 DEG C from 250 DEG C, the quality factor of 4 samples significantly improves.After the pump-down process of same time length, the quality factor through the sample 62 of 350 DEG C of pump-down process is 418, is through more than the twice of 250 DEG C of pump-down process sample 61 quality factors (178).As can be seen here, improve the temperature of pump-down process, particularly when heating-up temperature is elevated to more than 350 DEG C time, effectively can improve quality factor.Further, sample 64 is after 400 DEG C of pump-down process, and its quality factor is 860, is more than the twice of sample 62 quality factor (418), although sample 64 is in exhaust treatment process, vacuum chamber barometric minimum only has 1 × 10
-4torr, and sample 62 vacuum chamber barometric minimum in exhaust treatment process is 1 × 10
-7torr.As can be seen here, through the quality factor of 400 DEG C of pump-down process devices be more than 5 times (quality factor without pump-down process device is about 150) of the device quality factor without pump-down process.As can be seen here, the pump-down process more than 350 DEG C can effectively improve the device quality factor.Optionally, the temperature of pump-down process is 400 DEG C.
And the temperature more than 400 DEG C, just close to the eutectic temperature of eutectic bonding (in the present embodiment, bond wire is germanium-aluminium, eutectic temperature is 430 DEG C), first patterned metal layer 102 has the possibility of fusing, in addition too high temperature, can make the micro-mechanical gyroscope in substrate be affected.Therefore, the temperature of pump-down process maintains 350 DEG C within the scope of 400 DEG C.In the present embodiment, the temperature of described pump-down process maintains 400 DEG C.
It should be noted that, in exhaust treatment process, the blanket gas in described vacuum chamber can be the inert gas such as argon gas and nitrogen.
With reference to figure 7, provide handle wafer 200, described handle wafer 200 surface is formed with second graphical metal level 202.
Described second graphical metal level 202 is for realizing eutectic bonding with the first patterned metal layer 102 in described substrate 100.Therefore the metal material of described second graphical metal level 202 and the metal material of described first patterned metal layer 102 match, both are eutectic metal, and described second graphical metal level 202 covers described handle wafer 200 surface, the part corresponding with substrate 100 eutectic bonding region.In the present embodiment, the material of described second graphical metal level 202 is aluminium, and formation process is chosen as PVD deposition.
With reference to figure 8, second graphical metal level 202 correspondence of described substrate 100 first patterned metal layer 102 and handle wafer 200 is fitted, to realize wafer bonding.
Described handle wafer 200 is placed in above described substrate 100, and makes the second graphical metal level 202 in described handle wafer 200 and the first metal layer 102 position in described substrate 100 corresponding and fit.Afterwards, the eutectic temperature of described substrate 100 and described handle wafer 200 to the first metal layer and the second metal level is heated.
Concrete, in the present embodiment, described the first metal layer material is germanium, and described second metal layer material is aluminium, and therefore described eutectic temperature is 420 DEG C ~ about 440 DEG C.Apply pressure in described substrate 100 and described handle wafer about 200 two ends simultaneously, make described the first metal layer and the fusion of the second metal level, articulamentum 302 is formed, to realize the eutectic bonding of described substrate 100 and described handle wafer 200 between described substrate 100 and described handle wafer 200.
In sum, method for packing described in the present embodiment, before metallic bonding, thermal exhaust process is carried out to substrate, described thermal exhaust process effectively can remove steam and the compound of packaging area and base internal, effectively can improve the vacuum tightness in package cavity after having encapsulated, thus reduce encapsulation intraluminal device readout error, reduce device energy loss, improve device stability and improve device sensitivity, thus improve the device quality factor.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (11)
1. a method for packing, is characterized in that, comprising:
Form substrate, in described substrate, be formed with micro mechanical device;
The first patterned metal layer is formed at described substrate surface;
Process is exhausted to described substrate;
There is provided handle wafer, the surface of described handle wafer is formed with second graphical metal level;
The second graphical metal level correspondence of described substrate first patterned metal layer and handle wafer is fitted, to realize wafer bonding.
2. method for packing as claimed in claim 1, it is characterized in that, the step of described pump-down process comprises: in vacuum chamber, carry out thermal exhaust process to described substrate.
3. method for packing as claimed in claim 2, is characterized in that, described vacuum chamber is adopt heating plate as the vacuum chamber of thermal source, and the step of described thermal exhaust process comprises: heated by described heating plate.
4. method for packing as claimed in claim 2, is characterized in that, comprises: in exhaust treatment process, the temperature of described vacuum chamber maintains 350 DEG C within the scope of 400 DEG C in vacuum chamber to the step that thermal exhaust process is carried out in described substrate.
5. method for packing as claimed in claim 2, is characterized in that, describedly comprises the step that thermal exhaust process is carried out in described substrate in vacuum chamber: vacuum chamber internal gas pressure adopts the mode of circulation change to be exhausted process to described substrate.
6. method for packing as claimed in claim 5, is characterized in that, adopts the mode of circulation change to comprise the step that described substrate is exhausted process: to vacuumize described vacuum chamber, to obtain the first air pressure; In described vacuum chamber, pass into blanket gas, to obtain the second air pressure, described first air pressure is lower than described second air pressure.
7. method for packing as claimed in claim 6, it is characterized in that, the blanket gas that described vacuum chamber passes into comprises argon gas and nitrogen.
8. method for packing as claimed in claim 6, it is characterized in that, the mode of described employing air pressure circulation change comprises the step that described substrate is exhausted process: in the cycle of each air pressure circulation change, and the time that described vacuum chamber keeps under the second barometric information is 2 to 4 minutes; The time kept under the first barometric information is 5 to 6 minutes.
9. method for packing as claimed in claim 5, is characterized in that, described vacuum chamber internal gas pressure adopts the mode of circulation change to comprise the step that described substrate is exhausted process: the scope of described air pressure circulation change is 10
-10mbar to 900mbar.
10. method for packing as claimed in claim 5, it is characterized in that, the periodicity of described air pressure circulation change is more than or equal to 2.
11. method for packing as claimed in claim 1, is characterized in that, form substrate, be formed in described substrate in the step of micro mechanical device, described micro mechanical device is micro-mechanical gyroscope.
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| CN201410857360.3A CN104535084A (en) | 2014-12-30 | 2014-12-30 | Encapsulating method |
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| CN201410857360.3A CN104535084A (en) | 2014-12-30 | 2014-12-30 | Encapsulating method |
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| CN104535084A true CN104535084A (en) | 2015-04-22 |
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| CN201410857360.3A Pending CN104535084A (en) | 2014-12-30 | 2014-12-30 | Encapsulating method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112649076A (en) * | 2020-12-21 | 2021-04-13 | 合肥京东方显示技术有限公司 | Standard flow element, preparation method thereof and standard flow system |
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Application publication date: 20150422 |