CN104535003B - The detection means and detection method of a kind of polycrystalline silicon rod speed of growth and diameter - Google Patents
The detection means and detection method of a kind of polycrystalline silicon rod speed of growth and diameter Download PDFInfo
- Publication number
- CN104535003B CN104535003B CN201410709441.9A CN201410709441A CN104535003B CN 104535003 B CN104535003 B CN 104535003B CN 201410709441 A CN201410709441 A CN 201410709441A CN 104535003 B CN104535003 B CN 104535003B
- Authority
- CN
- China
- Prior art keywords
- silicon rod
- diameter
- detection
- silicon
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 36
- 230000012010 growth Effects 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 238000007405 data analysis Methods 0.000 claims abstract description 4
- 238000004364 calculation method Methods 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 4
- 239000005052 trichlorosilane Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000003698 anagen phase Effects 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000012369 In process control Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010965 in-process control Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of polycrystalline silicon rod speed of growth and the detection means and detection method of diameter, detection means includes camera head and industrial computer, the camera head is electrically connected with the industrial computer, and the camera head is arranged at the quartzy visor front of polycrystalline silicon reduction furnace wall.Detection method comprises the following steps：(1) silicon rod rod core is placed in polycrystalline silicon reducing furnace；(2) camera head gathered data；(3) industrial computer data analysis.The present invention is by designing the method that silicon rod diameter is detected, it is obtained in that silicon rod diameter this important parameter in reduction furnace operation, and and then calculate deposition velocity, instantaneous power consumption and instantaneous conversion rate of different growth phases etc., the operation of reduction furnace is instructed and optimized on this basis, rational raw material, heated current are given according to silicon rod growth diameter situation, so as to improve the operational efficiency of reduction furnace.
Description
The technical field is as follows:
the present invention relates to a device and a method for detecting a polycrystalline silicon rod, and more particularly, to a device and a method for detecting a growth rate and a diameter of a polycrystalline silicon rod.
Background art:
at present, the mainstream polysilicon production technology at home and abroad is an improved siemens method, high-purity polysilicon is obtained by performing chemical vapor deposition reaction on the surface of a high-temperature silicon core (silicon rod) electrified by trichlorosilane and hydrogen in a reduction furnace under a high-temperature condition, and the diameter of the silicon rod in the furnace gradually increases until the specified rod diameter is reached. In the process of growing the silicon rod, the diameter of the silicon rod is an important basis for setting the material flow and the heating current in process control. For a long time, the reduction furnace is controlled by mostly adopting a method of manually estimating the rod diameter by experience to search for the material flow and the heating current, and because the manual estimation has deviation, the material and current matching cannot achieve the optimal effect, and the optimization of the deposition efficiency is difficult. The concrete points are as follows: 1. the addition of raw material gas is difficult to control accurately, and if the addition is small, the silicon core grows slowly, the growth efficiency is low, and energy is wasted; if the addition amount is large, the structure of a new crystal is loose, the product quality is not ensured, the reaction is insufficient, and redundant raw material gas is discharged, so that waste is caused and the environment is polluted; 2. heating voltage (current) is difficult to control accurately, and the temperature of the silicon core deviates from the optimal reaction temperature, thereby bringing negative influence on the growth of the silicon core.
The invention content is as follows:
the first purpose of the invention is to provide a detection device for detecting the growth speed and the diameter of the polysilicon rod accurately, which has a simple structure and is convenient to operate.
The second object of the present invention is to provide a method for measuring the growth rate and diameter of the polycrystalline silicon rod by using the above apparatus.
The first purpose of the invention is implemented by the following technical scheme: the device for detecting the growth speed and the diameter of the polycrystalline silicon rod comprises a camera device and an industrial computer, wherein the camera device is electrically connected with the industrial computer, and the camera device is arranged in front of a quartz sight glass on the furnace wall of a polycrystalline silicon reduction furnace.
The camera device is a camera or a video camera.
The camera is a high-temperature-resistant fixed-focus digital camera.
The second purpose of the invention is implemented by the following technical scheme: the method for detecting the growth speed and the diameter of the polycrystalline silicon rod by using the device comprises the following steps: (1) placing a silicon rod core in the polycrystalline silicon reduction furnace; (2) the camera device collects data; (3) analyzing industrial computer data; wherein,
(1) placing a silicon rod core in the polycrystalline silicon reduction furnace: taking the diameter of the quartz sight glass as a symmetry axis, and uniformly and symmetrically arranging silicon rod cores on two sides of the symmetry axis;
(2) the camera collects data: selecting a pair of silicon rod cores adjacent to each other on two sides of a symmetry axis as a detection silicon rod, adjusting the camera device to enable the camera device to focus on the detection silicon rod, starting to continuously shoot and acquire image data, and transmitting the acquired image data to the industrial computer in real time;
(3) industrial computer data analysis: after receiving the image data, the industrial computer starts to start a silicon rod image processing program for calculation:
the method comprises the following steps of firstly, calculating the silicon rod spacing, wherein the calculation method for detecting the silicon rod spacing comprises the following steps:
S＝C×P
in the formula, the C proportionality constant is the ratio of the image pixel value of a measured object to the actual length of the measured object, P is the image pixel value of the distance between the two silicon rod detection lines, and the pixel value is the number of points of the collected image in the length or width direction;
secondly, calculating the radial growth speed of the silicon rod, wherein the calculation method for the radial growth speed of the silicon rod comprises the following steps:
in the formula, St2And St1Calculating the distance value of the detected silicon rods for two adjacent detections, wherein t2 and t1 are the time of the two adjacent detections;
thirdly, calculating the diameter of the silicon rod to be detected, wherein the calculation method of the diameter of the silicon rod to be detected comprises the following steps:
D＝S-S0+D0
in the formula, S is the current spacing value between the detection silicon rods, S0 is the initial spacing value between the detection silicon rods, and D0 is the initial diameter of the detection silicon rod, that is, the diameter of the silicon rod core;
fourthly, calculating instantaneous power consumption, wherein the method for calculating the instantaneous power consumption comprises the following steps:
in the formula, U is the total voltage of the silicon rod to be detected, the total voltage of the silicon rod to be detected is obtained by detecting an electrical control system of a reduction furnace, I is the total current of the silicon rod to be detected, the total current of the silicon rod to be detected is obtained by detecting the electrical control system of the reduction furnace, rho is the density of polycrystalline silicon, and is usually 2.32-2.33g/m3D is the diameter of the current silicon rod to be detected, V is the growth speed of the current silicon rod to be detected, and L is the length of the silicon rod to be detected;
fifthly, calculating the instantaneous raw material conversion rate, wherein the calculation method of the instantaneous raw material conversion rate comprises the following steps:
in the formula, F is the flow of trichlorosilane material and is obtained by detection of a reduction furnace process control system, and rho is the density of polycrystalline silicon and is usually 2.32-2.33g/m3D is the diameter of the current silicon rod to be detected, V is the growth speed of the current silicon rod to be detected, and L is the length of the silicon rod to be detected.
The camera device is a camera or a video camera.
The camera is a high-temperature-resistant fixed-focus digital camera.
The invention has the advantages that: according to the method for detecting the diameter of the silicon rod, the diameter of the silicon rod in the operation of the reduction furnace can be obtained, the deposition speed, the instantaneous power consumption, the instantaneous conversion rate and the like in different growth stages can be calculated, the operation of the reduction furnace is guided and optimized according to the parameter, reasonable raw materials and heating current are given according to the condition of the diameter of the silicon rod, and therefore the operation efficiency of the reduction furnace is improved.
Description of the drawings:
FIG. 1 is a view showing a device for measuring the growth rate and diameter of a polysilicon rod.
Fig. 2 is a picture of a silicon rod core in a polysilicon reducing furnace collected in an initial state.
FIG. 3 is a picture of a silicon rod in a polysilicon reducing furnace collected during the growth of the silicon rod.
The device comprises a polycrystalline silicon reduction furnace 1, a quartz sight glass 2, a detection silicon rod 3, a high-temperature-resistant fixed-focus digital camera 4 and an industrial computer 5.
The specific implementation mode is as follows:
example 1: the device for detecting the growth speed and the diameter of the polycrystalline silicon rod comprises a high-temperature-resistant fixed-focus digital camera 4 and an industrial computer 5, wherein the high-temperature-resistant fixed-focus digital camera 4 is electrically connected with the industrial computer 5, and the high-temperature-resistant fixed-focus digital camera 4 is arranged in front of a quartz sight glass 2 on the wall of a polycrystalline silicon reduction furnace 1.
Example 2: the method for detecting the growth speed and the diameter of the polycrystalline silicon rod by using the device in embodiment 1 comprises the following steps: (1) placing a silicon rod core in the polycrystalline silicon reduction furnace; (2) the camera device collects data; (3) analyzing industrial computer data; wherein,
(1) placing a silicon rod core in the polycrystalline silicon reduction furnace: taking the diameter of the quartz sight glass 2 as a symmetry axis, and uniformly and symmetrically arranging the 24 silicon rod cores on two sides of the symmetry axis;
(2) the camera collects data: selecting a pair of silicon rod cores adjacent to each other on two sides of a symmetry axis as a detection silicon rod 3, adjusting a high-temperature-resistant fixed-focus digital camera 4 to enable the high-temperature-resistant fixed-focus digital camera 4 to focus on the detection silicon rod 3, starting to continuously shoot and acquire image data, and transmitting the acquired image data to the industrial computer 5 in real time;
(3) industrial computer data analysis: after receiving the image data, the industrial computer 5 starts to start the silicon rod image processing program to calculate:
the first step is to calculate the silicon rod spacing, and the calculation method for detecting the silicon rod 3 spacing is as follows:
S＝C×P
in the formula, the C proportionality constant is the ratio of the image pixel value of a measured object to the actual length of the measured object, P is the image pixel value of the distance between the two silicon rod detection lines, and the pixel value is the number of points of the collected image in the length or width direction;
and secondly, calculating and detecting the radial growth speed of the silicon rod 3, wherein the calculation method for detecting the radial growth speed of the silicon rod 3 comprises the following steps:
in the formula, St2And St1Calculating the distance value of the detected silicon rods 3 for the two adjacent detections, wherein t2 and t1 are the time of the two adjacent detections;
thirdly, calculating the diameter of the silicon rod 3, wherein the calculation method for detecting the diameter of the silicon rod 3 comprises the following steps:
D＝S-S0+D0
in the formula, S is a current spacing value between the silicon rods 3 to be detected, S0 is an initial spacing value between the silicon rods 3 to be detected, and D0 is a diameter of the silicon rod core to be detected, which is an initial diameter of the silicon rod 3;
fourthly, calculating instantaneous power consumption, wherein the method for calculating the instantaneous power consumption comprises the following steps:
in the formula, U is the total voltage of the silicon rod 3, the total voltage of the silicon rod 3 is detected by an electrical control system of the reduction furnace, I is the total current of the silicon rod 3, the total current of the silicon rod 3 is detected by the electrical control system of the reduction furnace, rho is the density of polycrystalline silicon, and is usually 2.32-2.33g/m3D is the diameter of the currently detected silicon rod 3, V is the growth speed of the currently detected silicon rod 3, and L is the length of the detected silicon rod 3;
fifthly, calculating the instantaneous raw material conversion rate, wherein the calculation method of the instantaneous raw material conversion rate comprises the following steps:
in the formula, F is the flow of trichlorosilane material and passes through a reduction furnaceThe control system detects that rho is the density of the polysilicon and is usually 2.32-2.33g/m3D is the diameter of the currently detected silicon rod 3, V is the growth speed of the currently detected silicon rod 3, and L is the length of the detected silicon rod 3.
Claims (3)
1. The method for detecting the growth speed and the diameter of the polycrystalline silicon rod by using the detection device is characterized by comprising the following steps of: (1) placing a silicon rod core in the polycrystalline silicon reduction furnace; (2) the camera device collects data; (3) analyzing industrial computer data; wherein,
(1) placing a silicon rod core in the polycrystalline silicon reduction furnace: taking the diameter of a quartz sight glass as a symmetry axis, and uniformly and symmetrically arranging silicon rod cores on two sides of the symmetry axis;
(2) the camera collects data: selecting a pair of silicon rod cores adjacent to each other on two sides of a symmetry axis as a detection silicon rod, adjusting the camera device to enable the camera device to focus on the detection silicon rod, starting to continuously shoot and acquire image data, and transmitting the acquired image data to the industrial computer in real time;
(3) industrial computer data analysis: after receiving the image data, the industrial computer starts to start a silicon rod image processing program for calculation:
the method comprises the following steps of firstly, calculating and detecting the silicon rod spacing, wherein the calculation method for detecting the silicon rod spacing comprises the following steps:
S＝C×P
in the formula, the C proportionality constant is the ratio of the image pixel value of a measured object to the actual length of the measured object, P is the image pixel value of the distance between the two silicon rod detection lines, and the pixel value is the number of points of the collected image in the length or width direction;
secondly, calculating the radial growth speed of the silicon rod, wherein the calculation method for the radial growth speed of the silicon rod comprises the following steps:
in the formula, St2And St1Calculating the distance value of the detected silicon rods for two adjacent detections, wherein t2 and t1 are the time of the two adjacent detections;
thirdly, calculating the diameter of the silicon rod to be detected, wherein the calculation method of the diameter of the silicon rod to be detected comprises the following steps:
D＝S-S0+D0
in the formula, S is the current spacing value between the detection silicon rods, S0 is the initial spacing value between the detection silicon rods, and D0 is the initial diameter of the detection silicon rod, that is, the diameter of the silicon rod core;
fourthly, calculating instantaneous power consumption, wherein the method for calculating the instantaneous power consumption comprises the following steps:
in the formula, U is the total voltage of the detection silicon rod, I is the total current of the detection silicon rod, rho is the density of polycrystalline silicon, D is the current diameter of the detection silicon rod, V is the current growth speed of the detection silicon rod, and L is the length of the detection silicon rod;
fifthly, calculating the instantaneous raw material conversion rate, wherein the calculation method of the instantaneous raw material conversion rate comprises the following steps:
in the formula, F is the flow rate of trichlorosilane, rho is the density of polycrystalline silicon, D is the diameter of the current silicon rod to be detected, V is the growth speed of the current silicon rod to be detected, and L is the length of the silicon rod to be detected.
2. The method for detecting the growth rate and the diameter of the polycrystalline silicon rod according to claim 1, wherein the camera is a camera.
3. The method for detecting the growth speed and the diameter of the polycrystalline silicon rod according to claim 2, wherein the camera is a high temperature-resistant fixed-focus digital camera.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410709441.9A CN104535003B (en) | 2014-11-29 | 2014-11-29 | The detection means and detection method of a kind of polycrystalline silicon rod speed of growth and diameter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410709441.9A CN104535003B (en) | 2014-11-29 | 2014-11-29 | The detection means and detection method of a kind of polycrystalline silicon rod speed of growth and diameter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104535003A CN104535003A (en) | 2015-04-22 |
| CN104535003B true CN104535003B (en) | 2017-06-30 |
Family
ID=52850579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410709441.9A Expired - Fee Related CN104535003B (en) | 2014-11-29 | 2014-11-29 | The detection means and detection method of a kind of polycrystalline silicon rod speed of growth and diameter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104535003B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110182811A (en) * | 2019-06-12 | 2019-08-30 | 新疆协鑫新能源材料科技有限公司 | A kind of reduction furnace auxiliary imaging system and autocontrol method |
| CN110562986A (en) * | 2019-08-09 | 2019-12-13 | 南京因泰莱电器股份有限公司 | Early warning method for growth deviation of polysilicon rod |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597060A (en) * | 2009-06-27 | 2009-12-09 | 东方电气集团东方汽轮机有限公司 | Video monitoring device for polysilicon growth |
| CN101724895A (en) * | 2009-12-17 | 2010-06-09 | 江苏中能硅业科技发展有限公司 | Production process of polycrystalline silicon |
| CN202170375U (en) * | 2011-07-14 | 2012-03-21 | 常州江南电力光伏科技有限公司 | System for detecting crystal growth |
| CN102795627A (en) * | 2012-06-19 | 2012-11-28 | 合肥瑞石测控工程技术有限公司 | Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4209082B2 (en) * | 2000-06-20 | 2009-01-14 | コバレントマテリアル株式会社 | Single crystal pulling apparatus and pulling method |
-
2014
- 2014-11-29 CN CN201410709441.9A patent/CN104535003B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597060A (en) * | 2009-06-27 | 2009-12-09 | 东方电气集团东方汽轮机有限公司 | Video monitoring device for polysilicon growth |
| CN101724895A (en) * | 2009-12-17 | 2010-06-09 | 江苏中能硅业科技发展有限公司 | Production process of polycrystalline silicon |
| CN202170375U (en) * | 2011-07-14 | 2012-03-21 | 常州江南电力光伏科技有限公司 | System for detecting crystal growth |
| CN102795627A (en) * | 2012-06-19 | 2012-11-28 | 合肥瑞石测控工程技术有限公司 | Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace |
Non-Patent Citations (2)
| Title |
|---|
| 基于机器视觉技术的多晶硅棒直径在线检测系统的研究;何晓瑜;《中国优秀硕士学位论文全文数据库（信息科技辑）》;20111215(第12期);正文第4-15、35-47页 * |
| 多晶硅还原炉内硅棒直径在线监测系统的研究;刘祥;《中国优秀硕士学位论文全文数据库（工程科技I辑）》;正文第51-62页;20140915(第09期);正文第51-62页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104535003A (en) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104535003B (en) | The detection means and detection method of a kind of polycrystalline silicon rod speed of growth and diameter | |
| CN205851617U (en) | A kind of leading screw advances steel pipe medium-frequency pipe bender | |
| CN103305806B (en) | Device for continuously growing graphene at high temperature | |
| CN102586868A (en) | Preparation method of large-size single-crystal graphene and continuous thin film thereof | |
| CN103529168B (en) | The anabolic method of testing of Iron Ore Powder and device thereof | |
| CN107555439B (en) | Polycrystalline silicon growth electric current autocontrol method and device | |
| CN116839681B (en) | Multi-sensor-based asphalt stirring equipment monitoring method and system | |
| CN104237109A (en) | Method and device for measuring deformation and breakage process characteristics of single liquid drop in airflow | |
| CN201476905U (en) | Neural network PID temperature controlled thermocouple automatic verification system | |
| CN209974843U (en) | Heat treatment equipment for nanocrystalline alloy strip | |
| CN104807817A (en) | Apparatus and method for detecting characteristics of coal in coking process in coke oven | |
| CN106018731B (en) | A kind of coal quality volatile matter, fixed carbon online test method and system | |
| CN102538691A (en) | Method for measuring diameter of high-temperature steel pipe by using image recognition technology | |
| CN110333747B (en) | Temperature and humidity control method for drying room | |
| CN104155019B (en) | Temperature measuring equipment and temp measuring method | |
| CN206862318U (en) | Silicon rod apparatus for detecting diameter and 48 pairs of rod reduction furnaces | |
| CN102862989B (en) | For the pretreatment process of metallurgy method purifying polycrystalline silicon | |
| JP7274612B2 (en) | Method for producing polycrystalline silicon | |
| TWI724912B (en) | Method for producing polycrystalline silicon | |
| CN103641110A (en) | Method for preparing graphene by using induction heating | |
| CN203728581U (en) | Lithium iron phosphate preparation device | |
| CN204786536U (en) | Coal pit temperature control system | |
| CN104198380B (en) | Equipment and method for observing grapheme grain boundary on line | |
| CN203513284U (en) | Graphene growth device | |
| CN206208184U (en) | A kind of contactless magnetic field array sensing detecting system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170630 |