CN104532012A - Method for recycling gallium and gold from gallium nitride chip production wastes - Google Patents
Method for recycling gallium and gold from gallium nitride chip production wastes Download PDFInfo
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- CN104532012A CN104532012A CN201410785130.0A CN201410785130A CN104532012A CN 104532012 A CN104532012 A CN 104532012A CN 201410785130 A CN201410785130 A CN 201410785130A CN 104532012 A CN104532012 A CN 104532012A
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- gallium
- gold
- nitride chip
- gallium nitride
- processing waste
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 60
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 46
- 239000010931 gold Substances 0.000 title claims abstract description 46
- 239000002699 waste material Substances 0.000 title claims abstract description 39
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 238000004064 recycling Methods 0.000 title abstract description 5
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000005272 metallurgy Methods 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 3
- 238000012545 processing Methods 0.000 claims description 33
- 238000011084 recovery Methods 0.000 claims description 28
- 239000013618 particulate matter Substances 0.000 claims description 23
- 238000009833 condensation Methods 0.000 claims description 10
- 230000005494 condensation Effects 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000013467 fragmentation Methods 0.000 claims description 5
- 238000006062 fragmentation reaction Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 150000002259 gallium compounds Chemical class 0.000 claims description 2
- 229960001866 silicon dioxide Drugs 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000003912 environmental pollution Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000000194 supercritical-fluid extraction Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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- Manufacture And Refinement Of Metals (AREA)
Abstract
The invention discloses a method for recycling gallium and gold from gallium nitride chip production wastes. The method disclosed by the invention comprises the following steps of crushing the gallium nitride chip production wastes, carrying out vacuum metallurgy separation of obtained particles containing gallium and gold, and recycling to obtain elementary gallium and gold. The method disclosed by the invention is capable of effectively recycling gallium and gold from gallium nitride chip production wastes, has the outstanding advantages of reducing environmental pollution and increasing the resource utilization rate, and has the characteristics of low cost, high efficiency, no pollution and the like.
Description
Technical field
The present invention relates to a kind of method of Footwall drift gallium, gold from gallium nitride chip processing waste, belong to the recovery of metal, regeneration, resource technology field.
Background technology
Photodiode is the one in conventional electronic component diode, is a kind of a kind of device that electric energy can be become luminous energy, belongs to solid state light emitter.Current photodiode is widely used in research and production field, mainly comprises general illumination, landscape ornamental illumination, large screen display, backlight display, traffic signals display, auto lamp, road lighting etc.And the key of semiconductor lighting is its luminescence chip, mainly contain gallium arsenide and gan two kinds of chips at present, chip production mainly contains epitaxial wafer growth, makes the production links such as electrode, thinning, scribing, test, due to the restriction of state of the art, production process inevitably produces scrap stock and defect ware; Wherein the recovery of gallium arsenide chips processing waste is conducted extensive research and applied, such as vacuum method (Liu great Chun, Yang Bin etc., 2004), pickling process (Chen, W.T.; Tsai, L.C. etc., 2012), organic solvent extraction (Ahmed, I.; El-Nadi, Y. etc., 2013), ion-exchange (Filik, H.; Apak, R., 1998) and supercritical extraction (Chou, W.-L.; Wang, C.-T. etc., 2008) method such as.
And also rarely have people to set foot in for the recovery of gallium nitride chip processing waste, also be only to reclaiming containing gallium, ammonia-containing exhaust in production process in patent " blue light led epitaxy of gallium nitride process tail gas recycle (CN103130245A) ", and solids manufacture waste material is not adopted an effective measure.Owing to chip there being the electrode contacts of gold system, the mode that most of chip fabricators all takes chloroazotic acid to leach reclaims gold wherein, and effectively do not reclaimed as the gallium of chip main raw, and in leaching technology, producing acid waste water, environmental pollution is serious.In view of gallium nitride based light emitting diode is as most potential lighting system, its research and apply receives the extensive attention of national governments and supports energetically, progressively replaces conventional illumination sources at present, and the following gallium nitride chip market requirement has a extensive future.
Summary of the invention
The object of the invention is to solve the wasting of resources and problem of environmental pollution that gallium nitride chip processing waste causes, propose a kind of enriching and recovering method of gallium, gold in efficient, environmental protection, green gallium nitride chip processing waste, make gallium, gold is able to high efficiente callback, achieve the recovery of gallium nitride chip processing waste, regeneration and recycling treatment.
The present invention reclaims the method for gallium, gold from gallium nitride chip processing waste, to gallium nitride chip processing waste break process, the particulate matter containing gallium, golden composition obtained is carried out vacuum metallurgy recovery.
In recovery method of the present invention, under suitable operating parameters, the rate of recovery of gallium reaches more than 95%, and purity reaches more than 90%; The rate of recovery of gold reaches more than 95%, and purity is greater than 80%.In removal process of the present invention, the metal in gallium nitride chip processing waste all obtains efficient resourceization and reclaims.
The present invention reclaims in the method for gallium, gold from gallium nitride chip processing waste, adopts the process of vacuum metallurgy separation method to contain the particulate matter of gallium, golden composition, reclaims and obtain Metallic Gallium, gold; Described recovery method comprises the following steps:
(1) fragmentation of gallium nitride chip processing waste is obtained the particulate matter containing gallium, golden composition;
(2) particulate matter that step (1) obtains is placed in high-temperature crucible, then crucible is put into vacuum oven;
(3) start vacuum system after vacuum oven sealing to bleed, make the pressure of vacuum oven be 0.01 ~ 1.0Pa;
(4) start vacuum furnace power supply, the sample in crucible is heated to 1000 ~ 1300 DEG C, then keeps temperature-resistant, make fully decomposing containing gallium compound in raw material, gallium, gold fully evaporate, soaking time is 1.0 ~ 3.0h;
(5) gallium, golden steam are able to condensation respectively on condenser, reclaim and obtain Metallic Gallium, gold.
In described step (1), gallium nitride chip processing waste is carried out fragmentation, the particle diameter of the particulate matter that fragmentation obtains is 0.05-0.15mm.
In described step (5), the condensing temperature interval of gallium is 450 ~ 850 DEG C, and the rate of recovery of gallium reaches more than 95%, and purity is greater than 90%.The condensing temperature interval of gold is 750 ~ 1150 DEG C, and the rate of recovery of gold reaches more than 95%, and purity is greater than 80%.
In described step (5), remaining residue is mainly silicon-dioxide, and it can be used for preparing quartz ware.
In the present invention, described " gallium nitride chip processing waste " refers in epitaxial wafer growth, makes scrap stock and defect ware that the production links such as electrode, thinning, scribing and test produce.
Recovery method of the present invention, makes gallium, gold in gallium nitride chip processing waste obtain effective regeneration, namely facilitates the recycle of resource, decreases processing waste itself and conventional recovery method to the pollution of environment.In gallium nitride chip processing waste of the present invention, the recovery method of gallium, gold, has the features such as cost is low, efficient, pollution-free; Each component in gallium nitride chip processing waste is obtained for appropriate disposal of resources; Compare the method that tradition such as adopting acidleach reclaims valuable metal in electron wastes, recovery method of the present invention especially has advantage in minimizing environmental pollution and energy-saving and emission-reduction.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet that the present invention reclaims gallium, golden method from gallium nitride chip processing waste.
Embodiment
In conjunction with following specific embodiments and the drawings, the present invention is described in further detail, and protection content of the present invention is not limited to following examples.Under the spirit and scope not deviating from inventive concept, the change that those skilled in the art can expect and advantage are all included in the present invention, and are protection domain with appending claims.Implement process of the present invention, condition, reagent, experimental technique etc., except the following content mentioned specially, be universal knowledege and the common practise of this area, the present invention is not particularly limited content.
Fig. 1 is the schematic diagram of gallium in gallium nitride chip processing waste of the present invention, golden recovery method.As shown in Figure 1, first gallium nitride chip processing waste is through broken, and the particle diameter of the mixture after fragmentation is 0.05-0.15mm; Described mixture is the particulate matter containing gallium, golden composition; Then, particulate matter containing gallium, golden composition is separated through vacuum metallurgy partition method, under suitable operating parameters, obtain gallium (purity >90%) and metallic gold (purity >80%).
Wherein, " gallium nitride chip processing waste " refers in epitaxial wafer growth, makes scrap stock and defect ware that the production links such as electrode, thinning, scribing and test produce.
Wherein, " suitable operating parameters " refers to system pressure 0.01 ~ 1.0Pa, Heating temperature 1000 ~ 1300 DEG C, soaking time 1.0 ~ 3.0h.
Embodiment 1
First gallium nitride chip processing waste is broken into the particulate matter that particle diameter is 0.05-0.08mm, then, the particulate matter obtained is put into crucible, then crucible is put into vacuum oven.Start vacuum system after vacuum oven sealing to bleed, the vacuum tightness of vacuum oven is between 0.05-0.08Pa.Start the heating member heating crucible in vacuum oven, particulate matter in crucible is heated to 1100 DEG C.Then keep temperature-resistant, make gallium in raw material, gold fully evaporates, evaporation time is 2.0 hours.Gallium steam is able to condensation on condenser, and in the present embodiment, the condensing temperature interval of gallium steam is 480 ~ 785 DEG C, and the rate of recovery of gallium is 95.7%, and purity is 92.3%; The condensation on condenser of gold steam, in the present embodiment, the condensing temperature interval of golden steam is 785 ~ 1050 DEG C, and the rate of recovery of gold is 95.3%, and purity is 81.4%.
In the inventive method, the condensing temperature interval of gallium is suitable for the temperature range of 450 ~ 850 DEG C, and the condensing temperature interval of gold is suitable for the temperature range of 750 ~ 1150 DEG C, all can realize the recovery of Metallic Gallium, elemental gold within the scope of said temperature.Gallium is chosen with golden condensing temperature interval, unrestricted mutually.
Embodiment 2
First gallium nitride chip processing waste is broken into the particulate matter that particle diameter is 0.06-0.10mm, then, the particulate matter obtained is put into crucible, then crucible is put into vacuum oven.Start vacuum system after vacuum oven sealing to bleed, the vacuum tightness of vacuum oven is between 0.07-0.1Pa.Start the heating member heating crucible in vacuum oven, particulate matter in crucible is heated to 1250 DEG C.Then keep temperature-resistant, make gallium in raw material, gold fully evaporates, evaporation time is 2.5 hours.Gallium steam is able to condensation on condenser, and in the present embodiment, the condensing temperature interval of gallium steam is 570 ~ 820 DEG C, and the rate of recovery of gallium is 96.1%, and purity is 93.1%; The condensation on condenser of gold steam, in the present embodiment, the condensing temperature interval of golden steam is 820 ~ 1113 DEG C, and the rate of recovery of gold is 96.2%, and purity is 82.4%.
Embodiment 3
First gallium nitride chip processing waste is broken into the particulate matter that particle diameter is 0.09-0.12mm, then, the particulate matter obtained is put into crucible, then crucible is put into vacuum oven.Start vacuum system after vacuum oven sealing to bleed, the vacuum tightness of vacuum oven is between 0.1-1.0Pa.Start the heating member heating crucible in vacuum oven, particulate matter in crucible is heated to 1300 DEG C.Then keep temperature-resistant, make gallium in raw material, gold fully evaporates, evaporation time is 3.0 hours.Gallium steam is able to condensation on condenser, and in the present embodiment, the condensing temperature interval of gallium steam is 610 ~ 850 DEG C, and the rate of recovery of gallium is 95.1%, and purity is 91.7%; The condensation on condenser of gold steam, in the present embodiment, the condensing temperature interval of golden steam is 850 ~ 1150 DEG C, and the rate of recovery of gold is 95.7%, and purity is 81.6%.
Embodiment 4
First gallium nitride chip processing waste is broken into the particulate matter that particle diameter is 0.11-0.15mm, then, the particulate matter obtained is put into crucible, then crucible is put into vacuum oven.Start vacuum system after vacuum oven sealing to bleed, the vacuum tightness of vacuum oven is between 0.01-0.05Pa.Start the heating member heating crucible in vacuum oven, particulate matter in crucible is heated to 1000 DEG C.Then keep temperature-resistant, make gallium in raw material, gold fully evaporates, evaporation time is 1.0 hours.Gallium steam is able to condensation on condenser, and in the present embodiment, the condensing temperature interval of gallium steam is 450 ~ 750 DEG C, and the rate of recovery of gallium is 98.7%, and purity is 96.2%; The condensation on condenser of gold steam, in the present embodiment, the condensing temperature interval of golden steam is 750 ~ 960 DEG C, and the rate of recovery of gold is 98.8%, and purity is 84.2%.
Claims (6)
1. from gallium nitride chip processing waste, reclaim a method for gallium, gold, it is characterized in that, by gallium nitride chip processing waste through broken, the particulate matter containing gallium, golden composition obtained is carried out vacuum metallurgy separation, reclaims and obtain Metallic Gallium and gold.
2. from gallium nitride chip processing waste, reclaim the method for gallium, gold as claimed in claim 1, it is characterized in that,
(1) fragmentation of gallium nitride chip processing waste is obtained particulate matter;
(2) particulate matter that step (1) obtains is placed in high-temperature crucible, crucible is put into vacuum oven;
(3) start vacuum system after vacuum oven sealing to bleed, make the pressure of vacuum oven be 0.01 ~ 1.0Pa;
(4) start vacuum furnace power supply, the sample in crucible is heated to 1000 ~ 1300 DEG C, then keeps temperature-resistant, make fully decomposing containing gallium compound in material, gallium, gold fully evaporate, soaking time is 1.0 ~ 3.0h;
(5) gallium, golden steam are able to condensation respectively on condenser, reclaim and obtain Metallic Gallium, gold.
3. from gallium nitride chip processing waste, reclaim the method for gallium, gold as claimed in claim 2, it is characterized in that, in described step (1), the particle diameter of described particulate matter is 0.05-0.15mm.
4. from gallium nitride chip processing waste, reclaim the method for gallium, gold as claimed in claim 2, it is characterized in that, in described step (5), the condensing temperature interval of gallium is 450 ~ 850 DEG C, the rate of recovery of described gallium reaches more than 95%, and purity is greater than 90%.
5. from gallium nitride chip processing waste, reclaim the method for gallium, gold as claimed in claim 2, it is characterized in that, in described step (5), the condensing temperature interval of gold is 750 ~ 1150 DEG C, the rate of recovery of described gold reaches more than 95%, and purity is greater than 80%.
6. recovery method as claimed in claim 2, is characterized in that, in described step (5), residue obtainedly comprises silicon-dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410785130.0A CN104532012B (en) | 2014-12-17 | 2014-12-17 | Produce from gallium nitride chip and waste material reclaims gallium, the method for gold |
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| CN201410785130.0A CN104532012B (en) | 2014-12-17 | 2014-12-17 | Produce from gallium nitride chip and waste material reclaims gallium, the method for gold |
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| CN104532012A true CN104532012A (en) | 2015-04-22 |
| CN104532012B CN104532012B (en) | 2016-08-24 |
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| CN201410785130.0A Expired - Fee Related CN104532012B (en) | 2014-12-17 | 2014-12-17 | Produce from gallium nitride chip and waste material reclaims gallium, the method for gold |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107267758A (en) * | 2017-06-01 | 2017-10-20 | 华东师范大学 | Recovery indium, the method for silver from the waste and old component of Hall containing indium |
| CN109055782A (en) * | 2018-08-24 | 2018-12-21 | 华南理工大学 | The leaching method of gallium in a kind of useless light emitting diode |
| TWI663001B (en) * | 2017-07-24 | 2019-06-21 | Dayeh University | Method for recovering waste light-emitting diode grains |
| CN113652559A (en) * | 2021-08-20 | 2021-11-16 | 安徽工业大学 | Method for recovering rare and scattered metal gallium in gallium nitride waste material by pyrogenic process |
| CN115101636A (en) * | 2022-08-24 | 2022-09-23 | 江苏第三代半导体研究院有限公司 | Composite micro-nano semiconductor structure, preparation method and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1598016A (en) * | 2004-07-19 | 2005-03-23 | 昆明理工大学 | Process for comprehensive recovering gallium and arsenic from industrial waste material of gallium arsenide |
| CN101413066A (en) * | 2008-10-29 | 2009-04-22 | 南京金美镓业有限公司 | Vacuum decomposing method for separating gallium arsenide as metal gallium and metal arsenic |
| JP5133547B2 (en) * | 2006-09-29 | 2013-01-30 | 古河機械金属株式会社 | Purification method of gallium |
| CN103276407A (en) * | 2013-05-13 | 2013-09-04 | 攀枝花学院 | Method for recovering gallium and iron from low-grade raw materials containing gallium and iron |
| CN203329414U (en) * | 2013-05-08 | 2013-12-11 | 珠海经济特区方源有限公司 | Absorbing tower for absorbing metal substances in electrolytic tail liquid |
| CN104017995A (en) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | Method for recycling copper, indium, gallium and selenium from indium gallium selenium wastes containing copper |
-
2014
- 2014-12-17 CN CN201410785130.0A patent/CN104532012B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1598016A (en) * | 2004-07-19 | 2005-03-23 | 昆明理工大学 | Process for comprehensive recovering gallium and arsenic from industrial waste material of gallium arsenide |
| JP5133547B2 (en) * | 2006-09-29 | 2013-01-30 | 古河機械金属株式会社 | Purification method of gallium |
| CN101413066A (en) * | 2008-10-29 | 2009-04-22 | 南京金美镓业有限公司 | Vacuum decomposing method for separating gallium arsenide as metal gallium and metal arsenic |
| CN203329414U (en) * | 2013-05-08 | 2013-12-11 | 珠海经济特区方源有限公司 | Absorbing tower for absorbing metal substances in electrolytic tail liquid |
| CN103276407A (en) * | 2013-05-13 | 2013-09-04 | 攀枝花学院 | Method for recovering gallium and iron from low-grade raw materials containing gallium and iron |
| CN104017995A (en) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | Method for recycling copper, indium, gallium and selenium from indium gallium selenium wastes containing copper |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107267758A (en) * | 2017-06-01 | 2017-10-20 | 华东师范大学 | Recovery indium, the method for silver from the waste and old component of Hall containing indium |
| CN107267758B (en) * | 2017-06-01 | 2018-11-09 | 华东师范大学 | The method of recovery indium, silver from the waste and old component of Hall containing indium |
| TWI663001B (en) * | 2017-07-24 | 2019-06-21 | Dayeh University | Method for recovering waste light-emitting diode grains |
| CN109055782A (en) * | 2018-08-24 | 2018-12-21 | 华南理工大学 | The leaching method of gallium in a kind of useless light emitting diode |
| CN113652559A (en) * | 2021-08-20 | 2021-11-16 | 安徽工业大学 | Method for recovering rare and scattered metal gallium in gallium nitride waste material by pyrogenic process |
| CN113652559B (en) * | 2021-08-20 | 2022-07-29 | 安徽工业大学 | Method for recovering rare and scattered metal gallium in gallium nitride waste material by pyrogenic process |
| CN115101636A (en) * | 2022-08-24 | 2022-09-23 | 江苏第三代半导体研究院有限公司 | Composite micro-nano semiconductor structure, preparation method and application thereof |
| CN115101636B (en) * | 2022-08-24 | 2022-12-02 | 江苏第三代半导体研究院有限公司 | Composite micro-nano semiconductor powder structure, preparation method and application thereof |
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| CN104532012B (en) | 2016-08-24 |
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