CN104518681B - Power-converting device - Google Patents
Power-converting device Download PDFInfo
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- CN104518681B CN104518681B CN201410401986.3A CN201410401986A CN104518681B CN 104518681 B CN104518681 B CN 104518681B CN 201410401986 A CN201410401986 A CN 201410401986A CN 104518681 B CN104518681 B CN 104518681B
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- power
- terminal
- bus
- buffer
- power semiconductor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention provides power-converting device, and the power-converting device has buffer module, it is not necessary to for the space of buffer is arranged in front of the terminal of power semiconductor modular, and can reduce the mechanical stress of the terminal to power semiconductor modular.Power-converting device is respectively mounted power semiconductor modular on relative 2 face of the block that is heated of heat pipe-type cooling body, the positive pole and negative pole of each power semiconductor modular is connected with smoothing capacity device via bus, the power-converting device has buffer module, the buffer of voltage is rushed on when the buffer module is built-in with suppression power semiconductor modular switch, and project multiple terminals, buffer module is configured at the lower section of the block that is heated, and terminal is engaged with bus respectively.
Description
Technical field
The present invention relates to by commutator (converter), smoothing capacity device (smoothing capacitor) and inverter
(inverter) power-converting device for constituting.
Background technology
Common power-converting device is by being constituted with lower component：Alternating current power supply is transformed to into the commutator of direct current
(converter)；Output to commutator carries out smooth smoothing capacity device；And by DC converting be variable voltage variable ratio frequency changer
The inverter (inverter) of rate.The primary circuit route of connection commutator and inverter employs bus wiring (bus-bar
Wiring) to reduce the inductance of wiring, smoothing capacity device is connected with the centre of the bus wiring.
When the magnitude of current flow through due to the wiring between smoothing capacity device and inverter it is larger, therefore bus wiring electricity
When feeling larger, when inverter carries out switch motion on rush voltage increase.Increase with voltage is rushed on this, power-converting device
Power loss increases, and when rushing voltage on and further increasing, can damage the power semiconductor modular to form commutator and inverter
(power semiconductor module) internal semiconductor element.Therefore, in order to suppress voltage is rushed on this, in main circuit
The vicinity of the power semiconductor modular of wiring is provided with buffer (snubber).
As the technology of the inductance for reducing bus wiring, such as in patent documentation 1, in heat pipe-type cooling body (heat
Pipe type coolant) the two sides configuration of the block that is heated (block) constitute the power semiconductor modular of inverter, and make work(
Wiring between rate semiconductor module and smoothing capacity device becomes beeline.
【Patent documentation 1】Japanese Unexamined Patent Publication 7-31165 publication
But, even if the wiring between power semiconductor modular and smoothing capacity device is set to beeline, smoothing capacity
The quantity of device also corresponds to the magnitude of current for flowing through and increases, between power semiconductor modular and the smoothing capacity device of incrementss away from
From elongated, therefore in the larger power-converting device of the magnitude of current, buffer is required for anyway.The buffer is generally adopted
The mode being directly connected to the terminal of power semiconductor modular, but need in front of terminal for arranging the space of buffer.And
And, when buffer increases, quality also increases, when due to conveying when etc. vibration and to power semiconductor modular terminal apply
During mechanical stress (mechanical stress), power semiconductor modular is made to break down sometimes.
The content of the invention
The present invention is precisely in order to solving above-mentioned problem and completing, there is provided a kind of dress of the power converter with buffer module
Put, it is not necessary to for the space of buffer is arranged in front of the terminal of power semiconductor modular, and can reduce to power half
The mechanical stress of the terminal of conductor module.
The power-converting device of the present invention is respectively mounted power on relative 2 face of the block that is heated of heat pipe-type cooling body
Semiconductor module, the positive pole and negative pole of each power semiconductor modular are connected with smoothing capacity device via bus, the electric power
Converting means has buffer module, the buffer module be built-in with suppress power semiconductor modular switch when on rush voltage
Buffer, and project multiple terminals, buffer module is configured at the lower section of the block that is heated, and terminal is engaged with bus respectively.
Buffer module is configured at power-converting device the lower section of the block that is heated of heat pipe-type cooling body as constructed as above, and
The terminal projected from two sides is engaged with bus respectively, without for setting in front of the terminal of power semiconductor modular
Put the space of buffer module, and the mechanical stress of the terminal to power semiconductor modular can be reduced, power can be suppressed
The failure of semiconductor module.
Description of the drawings
Fig. 1 is the connection figure of the power-converting device of embodiment of the present invention 1.
Fig. 2 is the outline drawing of the power-converting device of embodiment of the present invention 1.
Fig. 3 is the expanded view of Unit the 1st of the power-converting device of embodiment of the present invention 1.
Fig. 4 is the major part of Unit the 1st of the embodiment of the present invention 1 observed from below.
Fig. 5 is the internal circuit diagram of the buffer unit of embodiment of the present invention 1.
Fig. 6 is the expanded view of Unit the 1st of the power-converting device of embodiment of the present invention 2.
Fig. 7 is the major part of Unit the 1st of the embodiment of the present invention 2 observed from below.
Label declaration
2a、2b、2c：Power semiconductor modular；3：Smoothing capacity device；4a、4b、4c：Power semiconductor modular；5a、5b、
5c：Bus；6a、6b、6c：Bus；7a、7b、7c：Bus；8a、8b、8c：Bus；10、10A：Buffer module；10c：Electric capacity
Device；10c1：1st capacitor；10c2：2nd capacitor；10P1、10AP1、10P2、10AP2、10N1、10AN1、10N2、10AN2：
Terminal；11、11A：Buffer module；11P1、11P2、11N1、11N2：Terminal；12、12A：Buffer module；12P1、12P2、
12N1、12N2：Terminal；101a、101b、101c：Heat pipe-type cooling body.
Specific embodiment
Embodiment 1
Below, embodiments of the present invention 1 are described with reference to the accompanying drawings in detail.Fig. 1 is the power converter of embodiment of the present invention 1
The connection figure of device.Power-converting device has：Three-phase alternating-current supply 1 is transformed to into the commutator 2 of direct current；To commutator 2
Output carries out smooth smoothing capacity device 3；And be variable voltage variable ratio frequency changer by the DC converting by smoothing capacity device 3 after smooth
The inverter 4 of rate.
Commutator 2 has power semiconductor modular 2a, 2b, 2c, and described power semiconductor modular 2a, 2b, 2c are connected in series
There are MOSFET (the Metal Oxide Semiconductor Field of composition upper arm (upper arm), underarm (lower arm)
Effect Transistor：Mos field effect transistor), and be incorporated in 1 encapsulation, as power
The drain terminal of the upper arm of the respective positive pole of semiconductor module 2a, 2b, 2c passes through bus 5a, 5b, 5c and bus 3P connects, bus
3P is connected with the positive terminal of smoothing capacity device 3.Additionally, as the underarm of the respective negative pole of power semiconductor modular 2a, 2b, 2c
Source terminal pass through bus 6a, 6b, 6c and bus 3N and connect, bus 3N is connected with the negative terminal of smoothing capacity device 3.And
And, the connecting portion of the respective upper arm of power semiconductor modular 2a, 2b, 2c and underarm passes through electric wire R, S, T and three-phase alternating-current supply 1
R phases, S-phase, T-phase connection.
Inverter 4 has power semiconductor modular 4a, 4b, 4c, and described power semiconductor modular 4a, 4b, 4c are connected in series
There are composition upper arm, the MOSFET of underarm, and be incorporated in 1 encapsulation, it is respective as power semiconductor modular 4a, 4b, 4c
The drain terminal of the upper arm of positive pole passes through bus 7a, 7b, 7c and bus 3P connects, the positive terminal of bus 3P and smoothing capacity device 3
Son connection.Additionally, as the respective negative pole of power semiconductor modular 4a, 4b, 4c underarm source terminal by bus 8a,
8b, 8c and bus 3N connections, bus 3N are connected with the negative terminal of smoothing capacity device 3.Also, power semiconductor modular 4a, 4b,
The connecting portion of the respective upper arm of 4c and underarm is connected by the U phases of electric wire U, V, W and motor 9, V phases, W.
Additionally, the terminal 10P1 of buffer module 10 is connected with bus 5a, terminal 10P2 is connected with bus 7a, terminal 10N1
It is connected with bus 6a, terminal 10N2 is connected with bus 8a.Equally, the terminal 11P1 of buffer module 11 is connected with bus 5b, end
Sub- 11P2 is connected with bus 7b, and terminal 11N1 is connected with bus 6b, and terminal 11N2 is connected with bus 8b.Buffer module 12 be also
Likewise, terminal 12P1 is connected with bus 5c, terminal 12P2 is connected with bus 7c, and terminal 12N1 is connected with bus 6c, terminal
12N2 is connected with bus 8c.
Fig. 2 is the outline drawing of the power-converting device of embodiment of the present invention 1.Power-converting device by the 1st unit 100a,
2nd unit 100b, the 3rd unit 100c, multiple smoothing capacity devices 3, the bus 3P of the positive terminal of connection smoothing capacity device 3 and company
The bus 3N for connecing negative terminal is formed.
In the 1st unit 100a, on a face of the block that is heated of heat pipe-type cooling body 101a, it is provided with by electric wire R
The power semiconductor modular 2a being connected with the R of three-phase alternating-current supply 1, on the face of the opposition side of the block that is heated, is provided with and is passed through
The power semiconductor modular 4a that electric wire U is connected with the U of motor 9.Equally, in the 2nd unit 100b, in heat pipe-type cooling body
On one face of the block that is heated of 101b, the power semiconductor mould being connected with the S-phase of three-phase alternating-current supply 1 by electric wire S is installed
Block 2b, on the face of the opposition side of the block that is heated, is provided with the power semiconductor modular being connected with the V of motor 9 by electric wire V
4b.3rd unit 100c is also likewise, on a face of the block that is heated of heat pipe-type cooling body 101c, being provided with by electric wire T
The power semiconductor modular 2c being connected with the T-phase of three-phase alternating-current supply 1, on the face of the opposition side of the block that is heated, is provided with and is passed through
The power semiconductor modular 4c that electric wire W is connected with the W of motor 9.
That is, commutator 2 is formed in the 1st unit 100a, the 2nd unit 100b, the respective one sides of the 3rd unit 100c, respective
Opposition side face formed inverter 4.It is each from power semiconductor modular 2a, 2b, 2c and power semiconductor modular 4a, 4b, 4c
From the drain terminal of upper arm, the wiring of the source terminal of underarm is connected with bus 3P, 3N according to the wiring diagram shown in Fig. 1.
Then, illustrate the installation method of buffer module 10,11,12.1st unit 100a, the 2nd unit 100b, Unit the 3rd
The all identical structures of 100c, therefore here as example, enter to the installation method of the buffer module 10 of the 1st unit 100a
Row explanation.
(A) of Fig. 3 is the expanded view of the 1st unit 100a of the power-converting device of embodiment of the present invention 1, (B) of Fig. 3
It is its left side view.Additionally, Fig. 4 is the figure of the major part of the arrow X-X for illustrating Fig. 3.By inserting installing hole 10a from two
The mounting screw 20 for entering is fastened to the screwed hole that the lower surface of the block that is heated in heat pipe-type cooling body 101a is arranged, by buffer mould
Block 10 is fixed to the lower surface of heat pipe-type cooling body 101a.Here, refer to below heat pipe-type cooling body 101a be close to bus 3P,
3N sides.Additionally, being that the top of heat pipe-type cooling body 101a is provided with radiating part (fin) in the opposition side of bus 3P, 3N.
Additionally, buffer module 10 terminal 10P1,10N1 with the L-shaped projected from side and from another side
Terminal 10P2,10N2 of prominent L-shaped, is provided with 2 screwed holes in each terminal.Buffer module 10 using the screwed hole with
Bus is engaged.Specifically, by mounting screw 21, terminal 10P1 is engaged with bus 5a, and terminal 10N1 is engaged with bus 6a, end
Sub- 10P2 is engaged with bus 7a, and terminal 10N2 is engaged with bus 8a.
And, by mounting screw 22, bus 5a is engaged with the drain terminal of power semiconductor modular 2a, bus 6a and work(
The source terminal engagement of rate semiconductor module 2a, bus 7a engaged with the drain terminal of power semiconductor modular 4a, bus 8a and
The source terminal engagement of power semiconductor modular 4a.
Here, bus 5a and bus 6a extend pars intermedia respectively, are formed as the part mutually extended when overlooking
Overlap.This is that the mutual inductance of the lap of the bus 5a and bus 6a in order to utilize the sense of current for flowing through contrary mitigates bus 5a
With the inductance of bus 6a.Bus 5a carries out Z-shaped bending relative to the bus 6a of plane, with the rank formed by Z-shaped bending
Difference part sandwiches the mode of insulating trip 13 and forms the part overlapped during vertical view.Additionally, bus 7a is identical with bus 5a shapes, bus
8a is identical with bus 6a shapes, so as to omit the description.
Additionally, in this example embodiment, illustrated from the two sides of buffer module 10 with the example of L-shaped project terminal 10P1,
The shape of 10N1,10P2,10N2, but the shape of terminal is not limited to L-shaped, as long as projecting and having from the two sides of buffer module 10
There is screwed hole, then can also be the other shapes of terminal such as block-shaped, U-shape that is heated.
Fig. 5 illustrates the internal circuit of buffer module 10.(A) of Fig. 5 is internally with 1 capacitor 10c as slow
Rush the internal circuit of device.One lateral electrode of capacitor 10c is connected with terminal 10P1 and terminal 10P2, another lateral electrode and terminal
10N1 and terminal 10N2 connections.
(B) of Fig. 5 is that internally have internal circuit of 2 capacitors as buffer.As the 1st of the 1st buffer the
One lateral electrode of capacitor 10c1 is connected with terminal 10P1, and another lateral electrode is connected with terminal 10N1.Additionally, as the 2nd buffering
One lateral electrode of the 2nd capacitor 10c2 of device is connected with terminal 10P2, and another lateral electrode is connected with terminal 10N2.That is, the 1st electric capacity
Device 10c1 is connected with terminal 10P1,10N1 of a side in the two sides of buffer module 10, the 2nd capacitor 10c2 with it is slow
Terminal 10P2,10N2 connection of another side rushed in the two sides of device module 10.
By the structure for being set to (B) of Fig. 5, the 1st capacitor 10c1 becomes the special buffers of power semiconductor modular 2a,
2nd capacitor 10c2 becomes the special buffers of power semiconductor modular 4a, therefore, it is possible to reduce power semiconductor modular 2a, work(
Influencing each other when rate semiconductor module 4a carries out switch motion.In addition, the structure and internal circuit of buffer module 11,12 with
Buffer module 10 is identical, so as to omit the description.
Here, illustrate capacitor 10c as buffer, the 1st capacitor 10c1 as the 1st buffer, the 2nd capacitor 10c2
It is not limited to capacitor, or is connected in series the portion of capacitor and resistance as the example of the 2nd buffer, but buffer
Part of part or further additional diode etc. by with other unit constructions and the part that formed.Can be by having
Said structure, suppress switch when on rush voltage.
Power-converting device is respectively mounted work(on relative 2 face of the block that is heated of heat pipe-type cooling body as constructed as above
Rate semiconductor module, the positive pole and negative pole of each power semiconductor modular are connected with smoothing capacity device via bus, the electric power
Converting means has a buffer module, the buffer module be built-in with when suppressing power semiconductor modular to switch on rush voltage
Buffer, and project multiple terminals, buffer module is configured at the lower section of the block that is heated, and terminal is engaged with bus respectively.
Thus, buffer module is configured at the lower section of the block that is heated of heat pipe-type cooling body, without in work(
The space of buffer module is set in front of the terminal of rate semiconductor module.Also, the terminal projected from buffer module is distinguished
Engage with bus such that it is able to reduce the mechanical stress of the terminal to power semiconductor modular, power semiconductor mould can be suppressed
The failure of block.
In addition it is also possible to be, buffer module has the 1st capacitor 10c1 and the 2nd capacitor 10c2, the 1st capacitor
10c1 is connected with the terminal of a side, and the 2nd capacitor 10c2 is connected with the terminal of another side.Thus, by two sides
Power semiconductor modular be respectively provided with independent buffer, enable to a power semiconductor modular and be not easily susceptible to another
Impact when power semiconductor modular is switched.
Additionally, the MOSFET that power semiconductor modular has can be formed by silicon (Si), it is also possible to by band gap (band
Gap) wide band gap semiconducter bigger than silicon is formed.As wide band gap semiconducter, for example, there are carborundum (SiC), gallium nitride (GaN) system
Material or diamond (diamond).
The proof voltage of the MOSFET formed by such wide band gap semiconducter is higher, it is allowed to which electric current density is higher, therefore
The miniaturization of MOSFET can be realized.Therefore, by using the MOSFET of miniaturization, the little of power semiconductor modular can be realized
Type.
Also, the thermostability of the MOSFET formed by wide band gap semiconducter is higher, therefore, it is possible to realize heat pipe-type cooling body
The miniaturization of the fin of 101a, 101b, 101c, can realize the miniaturization of power-converting device.Also, partly led by broad-band gap
The power loss of the MOSFET that body is formed is relatively low, therefore, it is possible to realize the high efficiency of MOSFET, can realize power-converting device
High efficiency.
Embodiment 2
Below, embodiments of the present invention 2 are described with reference to the accompanying drawings in detail.The power-converting device of embodiment 2 relative to
Buffer module 10,11,12 is only substituted for terminal shape different with fixing meanss by the power-converting device of embodiment 1
Buffer module 10A, 11A, 12A, other structures are identical with embodiment 1.(A) of Fig. 6 is the electric power of embodiment of the present invention 2
The expanded view of the 1st unit 100a of converting means, (B) of Fig. 6 is its left side view.Additionally, Fig. 7 is the arrow Y- for illustrating Fig. 6
The figure of the major part of Y.In Fig. 6, Fig. 7, to label identical with Fig. 3, Fig. 4 identical part mark, and omit and Fig. 3, Fig. 4
The explanation of the structure for repeating.
By the mounting screw 20 of the installing hole 10a insertions from two is fastened to the block that is heated in heat pipe-type cooling body 101a
Lower surface arrange screwed hole, buffer module 10A is fixed to the lower surface of the block that is heated of heat pipe-type cooling body 101a.This
Outward, terminal 10AP1,10AN1 with the L-shaped projected from a side of the buffer module 10A and L projected from another side
Terminal 10AP2,10AN2 of shape, is provided with 2 screwed holes in each terminal, and the leading section of terminal is provided with 1 installing hole.
Buffer module 10A is engaged with bus using the screwed hole.Specifically, terminal 10AP1 is engaged with bus 5a, terminal 10AN1
Engage with bus 6a, terminal 10AP2 is engaged with bus 7a, terminal 10AN2 is engaged with bus 8a.
Also, using the installing hole of terminal 10AP1 leading sections, bus 5a and terminal 10AP1 passes through mounting screw 22 by one
And it is fastened to the drain terminal of power semiconductor modular 2a.Equally, by mounting screw 22, bus 6a and terminal 10AN1 is by one
And the source terminal of power semiconductor modular 2a is fastened to, bus 7a and terminal 10AP2 is fastened to power semiconductor mould in the lump
The drain terminal of block 4a, bus 8a and terminal 10AN2 are fastened to the source terminal of power semiconductor modular 4a in the lump.
Buffer module 10,11,12 is replaced only in the wiring diagram of Fig. 1 by the wiring of the power-converting device of embodiment 2
Change buffer module 10A, 11A, 12A into, each terminal label is also accordingly replaced, connect identical, therefore omission is said
It is bright.Also, the internal circuit of buffer module 10A, 11A, 12A is also identical with Fig. 5, therefore omits the description.
The terminal projected from two sides is set to by buffer module 10A, 11A, 12A of power-converting device as constructed as above
L-shaped terminals, the leading section of L-shaped terminals are engaged with the positive pole of power semiconductor modular and negative pole, and leading section vicinity with
Bus is engaged.Thereby, it is possible to expand the cloth from the positive pole and negative pole of power semiconductor modular to buffer module 10A, 11A, 12A
The sectional area of line, further reduces the inductance of wiring.
Claims (5)
1. a kind of power-converting device, which is respectively mounted power half on relative 2 face of the block that is heated of heat pipe-type cooling body
Conductor module, the positive pole and negative pole of each power semiconductor modular are connected with smoothing capacity device via bus, it is characterised in that
The power-converting device has buffer module, and the buffer module is built-in with the suppression power semiconductor modular and opens
The buffer of voltage is rushed on during pass, and projects multiple terminals,
The buffer module is configured at the lower section of the block that is heated, and the terminal is engaged with the bus respectively.
2. power-converting device according to claim 1, it is characterised in that
The buffer module has the 1st buffer and the 2nd buffer,
1st buffer is connected with the terminal of a side,
2nd buffer is connected with the terminal of another side.
3. power-converting device according to claim 1, it is characterised in that
The terminal has L-shaped terminals,
The leading section of the L-shaped terminals is engaged with any one in the positive pole and negative pole,
The vicinity of the leading section is engaged with the bus.
4. the power-converting device according to any one in claims 1 to 3, it is characterised in that
The MOSFET that the power semiconductor modular has is formed by wide band gap semiconducter.
5. power-converting device according to claim 4, it is characterised in that
The wide band gap semiconducter is any one in carborundum, gallium nitride material and diamond.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-207989 | 2013-10-03 | ||
| JP2013207989A JP6102668B2 (en) | 2013-10-03 | 2013-10-03 | Power converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104518681A CN104518681A (en) | 2015-04-15 |
| CN104518681B true CN104518681B (en) | 2017-04-05 |
Family
ID=52793537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410401986.3A Active CN104518681B (en) | 2013-10-03 | 2014-08-15 | Power-converting device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6102668B2 (en) |
| CN (1) | CN104518681B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6174824B2 (en) * | 2015-04-20 | 2017-08-02 | 三菱電機株式会社 | Power converter |
| JP6407943B2 (en) * | 2016-11-14 | 2018-10-17 | ファナック株式会社 | Motor drive device |
| JP6708190B2 (en) * | 2017-09-05 | 2020-06-10 | 株式会社デンソー | Joining structure of semiconductor module and joining method |
| WO2024048066A1 (en) * | 2022-09-02 | 2024-03-07 | 三菱電機株式会社 | Power conversion device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135115A (en) * | 1995-03-10 | 1996-11-06 | 株式会社日立制作所 | Electric power converter apparatus for converting electric power between dc and ac |
| CN101064485A (en) * | 2006-04-27 | 2007-10-31 | 株式会社日立制作所 | Electric circuit device, electric circuit module, and power converter |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2904939B2 (en) * | 1991-02-08 | 1999-06-14 | 株式会社東芝 | Heat pipe type semiconductor stack |
| JPH0731165A (en) * | 1993-07-07 | 1995-01-31 | Fuji Electric Co Ltd | Inverter stack |
| JP3906440B2 (en) * | 2000-09-06 | 2007-04-18 | 株式会社日立製作所 | Semiconductor power converter |
| US6906404B2 (en) * | 2003-05-16 | 2005-06-14 | Ballard Power Systems Corporation | Power module with voltage overshoot limiting |
| JP4487682B2 (en) * | 2004-08-17 | 2010-06-23 | 富士電機ホールディングス株式会社 | Capacitor and installation method |
| JP5720175B2 (en) * | 2010-10-28 | 2015-05-20 | 株式会社明電舎 | Inverter device |
-
2013
- 2013-10-03 JP JP2013207989A patent/JP6102668B2/en active Active
-
2014
- 2014-08-15 CN CN201410401986.3A patent/CN104518681B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135115A (en) * | 1995-03-10 | 1996-11-06 | 株式会社日立制作所 | Electric power converter apparatus for converting electric power between dc and ac |
| CN101064485A (en) * | 2006-04-27 | 2007-10-31 | 株式会社日立制作所 | Electric circuit device, electric circuit module, and power converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6102668B2 (en) | 2017-03-29 |
| CN104518681A (en) | 2015-04-15 |
| JP2015073376A (en) | 2015-04-16 |
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