CN104518081B - The forming method of MTJ - Google Patents
The forming method of MTJ Download PDFInfo
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Abstract
A kind of forming method of MTJ, including：Substrate is provided, substrate surface has dielectric layer, has first electrode layer in dielectric layer, and dielectric layer exposes first electrode layer；Composite magnetic layers are formed in dielectric layer and first electrode layer surface, composite magnetic layers include：First thin magnetic film, the first insulation film positioned at the first thin magnetic film surface and the second thin magnetic film positioned at the first insulation film surface；Untill removing part composite magnetic layers and exposing the first insulation film, sub- magnetic texure is formed on the first insulation film surface, sub- magnetic texure includes etching the second magnetosphere formed by the second thin magnetic film；First oxide layer is formed on sub- magnetic texure surface using the first oxidation technology；Using the first oxide layer and sub- magnetic texure as mask, the insulation film of part first and the first thin magnetic film are removed, forms the first magnetosphere and the first insulating barrier positioned at the first magnetic layer surface.The MTJ performance formed improves.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of forming method of MTJ.
Background technology
Magnetic memory（Magnetic Random Access Memory, MRAM）With access time it is short, it is non-volatile and
The advantages that low in energy consumption, suitable on the message processing devices such as computer or mobile phone so that extensive pass of the magnetic memory by market
Note.
Existing magnetic memory structure includes：For the transistor as switching device and the magnetic for data storage
Property tunnel knot（Magnetic Tunnel Junction, MTJ）Structure.Magnetic memory is stored information into by applying magnetic field
In magnetic tunnel junction structure, and the electric current by measuring by MTJ reads stored information.
Fig. 1 is the cross section structure schematic diagram of existing MTJ, including：Bottom electrode positioned at the surface of substrate 100
Layer 101；Magnetic texure 102 positioned at the surface of bottom electrode layer 101；Top electrode layer 103 positioned at the surface of magnetic texure 102.
Wherein, magnetic texure 102 by fixed magnetic layer 110, the tunnel insulation layer 111 positioned at the surface of fixed magnetic layer 110 and is located at
The free magnetic layer 112 on the surface of tunnel insulation layer 111, which is alternately stacked, to be formed, and the magnetic texure 102 is at least three-decker
Or sandwich construction.
The direction of magnetization of the fixed magnetic layer 110 is fixed, and the direction of free magnetic layer 112 may be programmed.When the freedom
When the direction of magnetization of magnetosphere 112 is consistent with the direction of magnetization of fixed magnetic layer 110, the resistance of MTJ is minimum, is
Logical zero state；When the direction of magnetization of the free magnetic layer 112 differs 180 degree with the direction of magnetization of fixed magnetic layer 110
When, the resistance of MTJ is maximum, as logical one state.During " reading ", by obtaining MTJ
Resistance is to read the state of magnetic RAM.
However, the performance for the MTJ that prior art is formed is unstable, cause the reliable of magnetic RAM
Property is low.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of forming method of MTJ, the formed MTJ of raising
Stability, improve the magnetic RAM reliability that the MTJ formed.
To solve the above problems, the present invention provides a kind of forming method of MTJ, including：Substrate is provided, it is described
Substrate surface has first electrode layer, and the dielectric layer exposes the first electrode layer；In the dielectric layer and the first electricity
Pole layer surface forms composite magnetic layers, and the composite magnetic layers include：First thin magnetic film, positioned at the first thin magnetic film table
First insulation film in face and the second thin magnetic film positioned at the first insulation film surface；Remove part composite magnetic
Layer and untill exposing the first insulation film, forms sub- magnetic texure, the sub- magnetic texure bag on the first insulation film surface
Include and the second magnetosphere formed is etched by second thin magnetic film；Using the first oxidation technology on the sub- magnetic texure surface
Form the first oxide layer；Using the first oxide layer and sub- magnetic texure as mask, the insulation film of part first and the first magnetic are removed
Film, form the first magnetosphere and the first insulating barrier positioned at first magnetic layer surface.
Optionally, the forming method of first magnetosphere and the first insulating barrier is：Using the second oxidation technology to not by
The thin magnetic film of part first of sub- magnetic texure covering is aoxidized and forms the second oxide layer, and is located at sub- magnetic texure bottom
Part first thin magnetic film form the first magnetosphere；Remove the first oxide layer, the second oxide layer and non-quilt magnetic texure
The insulation film of part first of covering, the insulation film of part first positioned at sub- magnetic texure bottom form the first insulating barrier.
Optionally, second silicon nitride process is plasma oxidation process, the plasma oxidation process it is inclined
Voltage is put more than 100 volts.
Optionally, after sub- magnetic texure is formed, before the first oxidation technology, to the first insulation film and sub- magnetic junction
Structure carries out cleaning, to remove the impurity of the first insulation film and sub- magnetic texure surface.
Optionally, first oxidation technology is isotropic oxidation technology, and the thickness of first oxide layer is 10
Nanometer~30 nanometers.
Optionally, first oxidation technology is long-range oxidation technology, and the flow of the gas of the long-range oxidation technology is
50sccm~200sccm.
Optionally, first silicon nitride process is plasma oxidation process, the source of the plasma oxidation process
Power is 100 watts~500 watts, and bias power is 0 watt.
Optionally, removing the method for part composite magnetic layers includes：Mask layer is formed in the part surface of composite magnetic layers；
Using the mask layer as mask, the composite magnetic layers are etched untill the first insulation film is exposed, it is exhausted described first
Edge film surface forms sub- magnetic texure.
Optionally, the technique of the etching composite magnetic layers is anisotropic dry etch process, anisotropy
Dry etch process be ion sputtering etching technics, etching gas include hydrogen, methane, ammonia, one kind in nitrogen or more
Kind combination.
Optionally, after the first magnetosphere and the first insulating barrier is formed, the mask layer is removed.
Optionally, the composite magnetic layers also include：Second electrode film positioned at the second thin magnetic film surface.
Optionally, after etched portions composite magnetic layers, the sub- magnetic texure formed also includes：Positioned at the second magnetosphere
The second electrode lay on surface, the second electrode lay are etched by the second electrode film and formed.
Optionally, the thickness of first thin magnetic film is 1 angstrom~40 angstroms.
Optionally, the thickness of first insulating barrier is 1 angstrom~30 angstroms.
Optionally, in addition to：Before composite magnetic layers are formed, the second insulating barrier, institute are formed in first electrode layer surface
State composite magnetic layers and be formed at second surface of insulating layer.
Compared with prior art, technical scheme has advantages below：
In the forming method of MTJ, first oxidation technology can be in the sub- magnetic texure of etching formation
Surface forms the first oxide layer, and first oxide layer can be used in protecting the surface of the sub- magnetic texure, so as to anti-
Only during the insulation film of part first and the first thin magnetic film is removed, the second magnetospheric material is brought to first
The sidewall surfaces of insulating barrier, avoided with this and bridged between formed the first magnetosphere and the second magnetosphere.Therefore, institute
The stable performance of the MTJ of formation, the reliability enhancing of the magnetic RAM formed by the MTJ.
Further, the forming method of first magnetosphere and the first insulating barrier is：Using the second oxidation technology to not by
The thin magnetic film of part first of sub- magnetic texure covering is aoxidized and forms the second oxide layer, remove afterwards the first oxide layer,
Second oxide layer and the insulation film of part first of non-quilt magnetic texure covering, to form the first insulating barrier and the first magnetic
Property layer.Wherein, second silicon nitride process uses the plasma of oxygen under the influence of higher bias voltage, exhausted to first
Edge film and the bombardment of the first thin magnetic film direction.In second oxidation technology, because the sub- magnetic texure surface has
The protection of first oxide layer, therefore in second oxidation process, the plasma of oxygen will not be by the second magnetosphere
Material take the first insulation film surface to, so as to after the second oxide layer is removed, can ensure that formed first is insulated
The sidewall surfaces of layer are clean, avoid bridging between the first magnetosphere and the second magnetosphere.
Further, after sub- magnetic texure is formed, before the first oxidation technology, to the first insulation film and sub- magnetic junction
Structure carries out cleaning, can remove the etch by-products for being attached to sub- magnetic texure surface or metal impurities are remaining, make described
Sub- magnetic texure clean surface, so as to avoid etch by-products or metal impurities remnants equal to the first follow-up oxidation technology
The interference of even property so that the thickness of the first oxide layer formed is uniform, is advantageous to accurately control the size of sub- magnetic texure.
Further, first oxidation technology is isotropic oxidation technology, i.e., described first oxidation technology is in each side
Upward oxidation rate is identical, uniform so as to make to be formed at the thickness of the first oxide layer of sub- magnetic texure sidewall surfaces；
Then, after first oxide layer is subsequently removed, the size of the sub- magnetic texure also can be precisely controlled, favorably
In making formed MTJ stable performance.
Brief description of the drawings
Fig. 1 is the cross section structure schematic diagram of existing MTJ；
Fig. 2 is the cross section structure schematic diagram that MTJ surface has impurity；
Fig. 3 to Fig. 9 is the cross-sectional view of the MTJ forming process of the embodiment of the present invention.
Embodiment
As stated in the Background Art, the performance for the MTJ that prior art is formed is unstable, causes magnetic random to be deposited
The reliability of reservoir is low.
Found by research, refer to Fig. 2, the forming method of MTJ includes：In substrate 100 and positioned at substrate
The surface of first electrode layer 101 in 100 forms fixed magnetic film；Runnel insulator film is formed in fixed magnetic film surface；
Free magnetism film is formed in runnel insulator film surface；Top electrodes film is formed in free magnetism film surface；Formation is covered
The mask layer of cover top electrodes film surface；Using the mask layer as mask, using anisotropic dry etch process
The top electrodes film, own thin magnetic film, runnel insulator film and fixed magnetic film are etched until exposing substrate 100
Untill surface, fixed magnetic layer 110 is formed on the surface of bottom electrode layer 101, the tunnelling positioned at the surface of fixed magnetic layer 110 insulate
Layer 111, the free magnetic layer 112 positioned at the surface of tunneling insulation layer 111 and positioned at the surface of free magnetic layer 112 top electricity
Pole layer 103.
However, because the material of the top electrode layer 103 and free magnetic layer 112 is metal, therefore, described in process
After anisotropic dry etch process, easily in the fixed magnetic layer 110, tunneling insulation layer 111, free magnetic layer
112 and the sidewall surfaces attachment impurity 104 of top electrode layer 103, the impurity 104 includes remaining metal material or etching is secondary
Product.And when the remaining metal material is attached to the sidewall surfaces of tunneling insulation layer 111, easily cause free magnetism
Metal bridge joint occurs between layer 112 and fixed magnetic layer 110, the free magnetic layer 112 and fixed magnetic layer 110 occurs short
Road.So that the MTJ degradation formed, reliability decrease.
In order to solve the above problems, the present invention provides a kind of forming method of MTJ, including：There is provided surface has
The substrate of dielectric layer, the dielectric layer is interior to have first electrode layer；Formed in the dielectric layer and first electrode layer surface compound
Magnetosphere, the composite magnetic layers include：First thin magnetic film, the first insulation positioned at the first thin magnetic film surface are thin
Film and the second thin magnetic film positioned at the first insulation film surface；Remove part composite magnetic layers and expose first
Untill insulation film, sub- magnetic texure is formed on the first insulation film surface, the sub- magnetic texure is included by second magnetic
Property film etches the second magnetosphere to be formed；First oxidation is formed on the sub- magnetic texure surface using the first oxidation technology
Layer；Using the first oxide layer and sub- magnetic texure as mask, the insulation film of part first and the first thin magnetic film are removed, forms first
Magnetosphere and the first insulating barrier positioned at first magnetic layer surface.
Wherein, the surface for the sub- magnetic texure that first oxidation technology can be formed in etching forms the first oxide layer,
First oxide layer can be used in protecting the surface of the sub- magnetic texure, so as to prevent from insulating in removal part first
During film and the first thin magnetic film, the second magnetospheric material is brought to the sidewall surfaces of the first insulating barrier, with
This is avoided bridges between formed the first magnetosphere and the second magnetosphere.Therefore, the MTJ formed
Stable performance, the reliability enhancing of the magnetic RAM formed by the MTJ.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 3 to Fig. 9 is the cross-sectional view of the MTJ forming process of the embodiment of the present invention.
It refer to Fig. 3, there is provided substrate, the substrate surface have first electrode layer 203.
The substrate includes：Semiconductor base 200, the dielectric layer 201 for being formed at the surface of semiconductor base 200, are given an account of
There is conductive structure 202 in matter layer 201, and the dielectric layer 201 exposes the conductive structure 202.The first electrode layer
203 are formed at dielectric layer 201 and conductive structure 202 surface.Wherein, in the semiconductor base 200 or surface formed with
Semiconductor devices；The conductive structure for electrically connecting the semiconductor devices, the semiconductor device are also formed with the substrate
Part and conductive structure are electrically isolated by the dielectric layer 201.The semiconductor base 200 includes silicon substrate, silicon-Germanium substrate, carbonization
Silicon substrate, silicon-on-insulator substrate, germanium substrate on insulator, glass substrate or III-V substrate（Such as gallium nitride lining
Bottom or gallium arsenide substrate etc.）.In the present embodiment, the semiconductor devices is transistor, grid, source electrode or the leakage of the transistor
Pole is electrically connected with the conductive structure 202 in dielectric layer 201, and the transistor can be driven by the conductive structure and is subsequently formed
MTJ, realize erasing or write-in of the data in the magnetic tunnel junction structure.
The transistor AND gate first electrode layer 203 that the conductive structure 202 is used to make to be formed in substrate electrically connects, so that
The transistor is realized to the drive control for the MTJ being subsequently formed.In the present embodiment, the conductive structure 202 includes
The conductive plunger of transistor gate is connected to, the material of the conductive plunger is copper, tungsten or aluminium；Moreover, the conductive structure is also
Including the barrier layer being formed between conductive plunger and dielectric layer 201, the material on the barrier layer is titanium nitride, tantalum nitride, titanium,
One or more in tantalum.
The material of the dielectric layer 201 is one or more combinations in silica, silicon nitride or silicon oxynitride, is given an account of
Matter layer 201 is formed by chemical vapor deposition method.After deposition forms dielectric layer 201, the dielectric layer 201 and shape are etched
Into the opening for exposing the semiconductor devices in substrate, the grid of transistor is exposed in the present embodiment；In the opening
Interior deposition block film, conductive film is deposited on block film surface；The table of dielectric layer 201 is removed by CMP process
The conductive film and block film in face, form conductive plunger and barrier layer.
Bottom electrode of the first electrode layer 203 as the MTJ formed.In the present embodiment, described
One electrode layer 203 is electrically connected by conductive structure 202 with transistor, and the first electrode layer 203 is used to pass to the transistor
Electric signal is passed or receives, therefore, the first electrode layer 203 is preferably using the material to conduct electricity very well, such as tantalum（Ta）, platinum
Manganese（PtMn）Or ruthenium（Ru）.In another embodiment, the first electrode layer 203 can also use copper, tungsten or aluminium as material.
The formation process of the first electrode layer is depositing operation（Chemical vapor deposition method or physical gas-phase deposition）Or plating
Technique；Such as when the material of first electrode layer 203 is copper, using copper electroplating technology（ECP）.
Fig. 4 is refer to, composite magnetic layers 204, the composite magnetic layers 204 are formed on the surface of first electrode layer 203
Including：First thin magnetic film 210, the first insulation film 211 positioned at the surface of the first thin magnetic film 210, positioned at described
Second thin magnetic film 212 on the surface of one insulation film 211.
First thin magnetic film 210 is used to form fixed magnetic layer, and second thin magnetic film 212 is used to form freedom
Magnetosphere, described is that the first insulation film 211 is used to isolate fixed magnetic layer and free magnetic layer.Wherein, the fixed magnetic
Layer has the fixed direction of magnetization, and the direction of magnetization of the free magnetic layer may be programmed, by making the fixed magnetic layer and oneself
It is identical or on the contrary, make formed MTJ be in high resistant or low resistive state, so as to reality by this words direction between magnetosphere
Now to the programming of logic state.The material of the thin magnetic film 212 of first thin magnetic film 210 or second is CoFe or CoFeB, i.e.,
The fixed magnetic layer or the material of free magnetic layer formed is CoFe or CoFeB；The material of first insulation film 211 is
Magnesia, strontium oxide strontia, barium monoxide or radium oxide.
In the present embodiment, the second electrode that the composite magnetic layers 204 also include positioned at the surface of the second thin magnetic film 212 is thin
Film 213.The second electrode film 213 is used to being formed the top electrodes of magnetic tunnel junction structure, the top electrodes be used for
External circuit transmission receives electric signal, and therefore, the second electrode film 213 preferably uses the material to conduct electricity very well,
Such as tantalum（Ta）, platinum manganese（PtMn）Or ruthenium（Ru）.In addition, the second electrode film 213 can also use copper, tungsten or aluminium conduct
Material.In another embodiment, do not have second electrode film, i.e., the top of described composite magnetic layers in the composite magnetic layers
For the second thin magnetic film；After the first magnetosphere and the second magnetosphere is subsequently formed, in the described second magnetospheric top table
Face forms the second electrode lay.
In the present embodiment, first thin magnetic film 210 is formed directly into the surface of first electrode layer 203, and described first
Electrode layer 203 can be biased to the MTJ formed；The second electrode lay 210.In another embodiment,
One electrode layer surface is also formed with the second insulation film, and the composite magnetic layers are formed at the second insulation film surface, institute
Threshold voltage between first electrode layer and the second electrode lay can be adjusted by stating the second insulating barrier；In addition, the composite magnetic layers
203 can also include the 3rd insulation film between second electrode film and the second thin magnetic film；Second insulation is thin
Film is used to form the second insulating barrier, and the 3rd insulation film is used to being formed the 3rd insulating barrier, second insulating barrier, the 3rd exhausted
Edge layer can adjust the threshold voltage between first electrode layer 203 and the second electrode lay.
The thickness of first thin magnetic film 210 is 1 angstrom~40 angstroms, the thickness of first insulation film 211 for 1 angstrom~
30 angstroms.Due to the thinner thickness of first insulation film 211, the gas in the second follow-up oxidation technology is set to pass through institute
The first insulation film 211 is stated, and is entered in first thin magnetic film 210, enables the gas thin to first magnetic
Film 210 is aoxidized to form the second oxide layer；Due to the thinner thickness of first thin magnetic film 210, therefore follow-up
In the gas of titanium dioxide technique, the gas through the first insulation film 211 can make the 210 complete oxygen of the first thin magnetic film
Change.
Fig. 5 is refer to, in composite magnetic layers 204（As shown in Figure 4）Part surface formed mask layer 205；Covered with described
Film layer 205 is mask, etches the composite magnetic layers 204 untill the first insulation film 211 is exposed, exhausted described first
The surface of edge film 211 forms sub- magnetic texure 206, and the sub- magnetic texure 206 is included by second thin magnetic film 212（Such as
Shown in Fig. 4）Etch the second magnetosphere 212a formed.
The mask layer 205 defines the second electrode lay being subsequently formed and the second magnetosphere parallel to the surface of substrate 200
The figure in direction.And the position of the mask layer 205 is corresponding with the position of conductive structure 202, make the first electricity being subsequently formed
Pole layer can electrically connect with conductive structure 202, so as to realize the transmission of the electric signal between semiconductor devices and MTJ.
The material of the mask layer 205 is silicon nitride, silicon oxynitride, silica, titanium nitride, amorphous carbon or silicon, in the present embodiment,
The material of the mask layer 205 is silicon nitride.The forming method of the mask layer 205 includes：In the surface shape of composite magnetic layers 204
Into mask film（It is not shown）；Patterned layer is formed in the first mask film surface, the position of the patterned layer is with leading
Electric structure 202 is corresponding；Using the patterned layer as mask, it is thin that the mask is etched using anisotropic dry etch process
Film, untill composite magnetic layers 204 are exposed, form mask layer 205.In the present embodiment, the patterned layer is graphical
Photoresist, the patterned layer can remove after mask layer 205 is formed, or be removed when subsequently removing mask layer 205.
In the present embodiment, the technique of the etching composite magnetic layers 204 is anisotropic dry etch process, and institute
It is ion sputtering to state anisotropic dry etch process（Ions Sputter）Etching technics.Due to the composite magnetic layers
The first thin magnetic film 210, the first insulation film 211 and the second thin magnetic film 212, the first magnetic therein are comprised at least in 204
The material of 210 and second thin magnetic film of film 212 is the alloy that various metals are formed.Moreover, the composite magnetic layers 204 of the present embodiment
Also include second electrode film 213, therefore the material category of the composite magnetic layers 204 is complicated.
Because the etching technics of the ion sputtering is using the physical bombardment of ion to reach etching purpose, therefore use
The etching technics of the ion sputtering can be reduced for the Etch selectivity between various types of material, so as to it ensure that etching after
The second electrode lay 213a formed and the second magnetosphere 212a sidewall profile it is good；The ion sputtering etching technics
Gas includes containing one in protium, carbon, the gas of nitrogen, inert gas, such as hydrogen, methane, ammonia, nitrogen
Kind or multiple combinations, the gas will not react with the material in composite magnetic layers 203, can ensure compound after etching
The pattern of magnetosphere 203 is good.
The sub- magnetic texure 206 that etching is formed is a part for MTJ, and the second magnetosphere 212a is used as certainly
By magnetosphere, the direction of magnetization of the second magnetosphere 212a can be programmed.In the present embodiment, the composite magnetic layers 204
Also include second electrode film 213, therefore, the sub- magnetic texure 206 formed after the etching also includes by second electrode film
213（As shown in Figure 4）The second electrode lay 213a formed is etched, the second electrode lay 213a is as the magnetic tunnel formed
The top electrodes of knot.
The etching technics of the ion sputtering is used to etch the thin magnetic film 212 of second electrode film 213 and second, and stops
In the surface of the first insulation film 211, therefore in stop-layer of first insulation film 211 as the etching technics；Moreover,
The first insulation film of part 211 not covered by the sub- magnetic texure 206 can subsequently remove the first oxide layer and second
It is removed during oxide layer.
However, in the etching process for forming sub- magnetic texure 206, it is difficult to etching by-product can be produced with avoiding
Thing 220, the etch by-products 220 include the material and polymer of the thin magnetic film 212 of second electrode film 213 and second.
Moreover, the etch by-products 220 are easily attached to the sub- surface of magnetic texure 206, harmful effect is produced for subsequent technique.Cause
This, it is necessary to carry out cleaning to remove etch by-products 220 before the first oxidation technology is carried out.
Fig. 6 is refer to, after sub- magnetic texure 206 is formed, the first insulation film 211 and sub- magnetic texure 206 are entered
Row cleaning, to remove the etch by-products 220 of the first insulation film 211 and the surface of sub- magnetic texure 206（Such as Fig. 5 institutes
Show）.
The cleaning is used to remove etch by-products 220, so that the first follow-up oxidation technology will not be carved
The influence of accessory substance 220 is lost, makes the first oxidated layer thickness to be formed evenly.The cleaning can be wet clean process
Or dry method cleaning.The cleaning fluid of the wet clean process is hydrogen fluoride（HF）And water（H2O）Mixed solution or carry
The organic solution of hydroxyl and amino（Such as EKC）；When the cleaning fluid is the mixed solution of hydrogen fluoride and water, the hydrogen fluoride
Volume ratio with water is 1:500~1:1000；Cleaning temperature is 20 DEG C~40 DEG C, and scavenging period is 5 minutes~20 minutes.
Fig. 7 is refer to, the first oxide layer 207 is formed on the sub- surface of magnetic texure 206 using the first oxidation technology.
First oxidation technology is isotropic oxidation technology, for forming first on the sub- surface of magnetic texure 206
Oxide layer 207 is the first oxide layer 207 as protective layer when being subsequently formed the first magnetosphere and the first insulating barrier, is avoided
The the first insulating layer sidewalls remained on surface metal material formed, prevent formed the second magnetosphere 212a and the first magnetosphere
Between metal bridge joint occurs, so as to ensure that the formation of formed MTJ is stable.
In one embodiment, first oxidation technology is long-range oxidation（Remote Oxidation）Technique.Described
In long-range oxidation technology, after oxygen is in plasma, is carried by carrier gas and entered with certain flow in reaction chamber.The oxygen
The plasma of gas is brought into reaction chamber by carrier gas and the aspiration pump by being connected with reaction chamber is discharged, the grade of the oxygen from
The oxidation rate in all directions of daughter is close, and the formed thickness of the first oxide layer 207 can be made uniform.The present embodiment
In, the gas flow of the long-range oxidation technology is 50sccm~200sccm.
In another embodiment, first silicon nitride process is plasma oxidation process.In the plasma oxygen
In chemical industry skill, oxygen is in plasma, and is moved under the influence of source power to the direction of substrate 200, and bias power is 0
Watt, oxidation rate of the oxygen gas plasma in all directions can be made close, so that the first oxide layer 207 formed
Thickness is uniform.In the present embodiment, the source power of the plasma oxidation process is 100 watts~500 watts, can make the oxygen
Plasma moves to the direction of substrate 200, while will not make the direction of motion of the oxygen gas plasma by more limitations.
Because first oxidation technology is isotropic oxidation technology, therefore the thickness of first oxide layer 207
Uniformly so that after subsequently removing first oxide layer 207, the second electrode lay 213a and the second magnetosphere 212a knot
Structure size can be precisely controlled, and the second electrode lay 213a and the second magnetosphere 212a surface topography are good.
In the present embodiment, the thickness of first oxide layer 207 is 10 nanometers~30 nanometers.
It should be noted that because first oxidation technology is isotropic oxidation technology so that the mask layer
205 side wall and top surface is also oxidized, therefore first oxide layer 207 is also covered in side wall and the bottom of mask layer 205
Portion surface.
Refer to Fig. 8, be mask with the first oxide layer 207 and sub- magnetic texure 206, using the second oxidation technology to not by
The first thin magnetic film of part 210 that sub- magnetic texure 206 covers（As shown in Figure 7）Aoxidized and form the second oxide layer 208,
And the first thin magnetic film of part 210 positioned at the sub- bottom of magnetic texure 206 forms the first magnetosphere 210a.
Second oxidation technology is plasma oxidation process, and second oxidation technology is the directive oxygen of tool
Chemical industry skill, oxidation direction is perpendicular to the surface of the first insulation film 211, so as to the portion for covering non-quilt magnetic texure 206
Divide the first thin magnetic film 210 to aoxidize, the first magnetosphere 210a positioned at the sub- bottom of magnetic texure 206 is formed with this.
In second oxidation technology, oxygen is in plasma, and under the driving of larger bias voltage, to
The surface direction of one insulation film 211 moves, and the bias voltage is more than 100 volts.In the present embodiment, due to the first insulation film
211 thinner thickness, and the energy of the plasma of the oxygen is larger, therefore the plasma of the oxygen can pass through institute
State the first insulation film 211 and enter the first thin magnetic film 210 and carry out oxidation reaction.It is additionally, since first thin magnetic film
211 thinner thickness, therefore be easy to be fully oxidized, then after subsequently removing the second oxide layer 208, it is not easy in dielectric layer 201
Remained on surface metal material.
In the present embodiment, second oxidation technology is also to the part first electrode of non-quilt magnetic texure 206 covering
Layer 203（As shown in Figure 7）Aoxidized, the second formed oxide layer 208 is directly contacted with the surface of dielectric layer 201.Due to
The thinner thickness of first thin magnetic film 210, is easy to be fully oxidized；Therefore it is complete in first thin magnetic film 210
After oxidation, the plasma of oxygen can continue to enter in first electrode layer 203 and be aoxidized, to form the second oxide layer
208。
And first electrode layer 203a is formed positioned at the not oxidized part first electrode layer 203 in the sub- bottom of magnetic texure 206,
The bottom electrode of MTJ i.e. formed the first electrode layer 203a, the first electrode layer 203a and conductive structure
202 electrical connections, so as to realize the electric signal transmission between the semiconductor devices in substrate and the MTJ formed.
Fig. 9 is refer to, removes the first oxide layer 207（As shown in Figure 8）, the second oxide layer 208（As shown in Figure 8）And
The first insulation film of part 211 that non-quilt magnetic texure 206 covers（As shown in Figure 8）, positioned at the sub- bottom of magnetic texure 206
The first insulation film of part 211 forms the first insulating barrier 211a.
The technique for removing the first oxide layer 207, the second oxide layer 208 and the first insulating barrier of part 211 is carved for wet method
Etching technique or dry etch process；Moreover, the wet-etching technology or dry etch process are preferably isotropic quarter
Etching technique, to remove positioned at second oxide layer 208 on the surface of dielectric layer 201 and the first insulation film 211 and be located at simultaneously
First oxide layer 207 of the sub- side wall of magnetic texure 206.In the present embodiment, the first magnetosphere 210a and the second magnetosphere
212a material is identical, and first electrode layer 203a is identical with the second electrode lay 213a material, therefore first oxide layer 207
It is identical with the material of the second oxide layer 207, therefore the oxide layer 208 of first oxide layer 207 and second can remove simultaneously.
It should be noted that remove the first oxide layer 207, the second oxide layer 208 and the first insulating barrier of part 211 it
Afterwards, the mask layer 205 is removed（As shown in Figure 8）.
In the present embodiment, the surface for the sub- magnetic texure that first oxidation technology can be formed in etching forms the first oxygen
Change layer, first oxide layer can be used in protecting the surface of the sub- magnetic texure, so as to prevent from removing part the
During one insulation film and the first thin magnetic film, the second magnetospheric material is brought to the side wall table of the first insulating barrier
Face, avoided with this and bridged between formed the first magnetosphere and the second magnetosphere.Therefore, the magnetic tunnel formed
The stable performance of knot, the reliability enhancing of the magnetic RAM formed by the MTJ.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (13)
- A kind of 1. forming method of MTJ, it is characterised in that including：Substrate is provided, the substrate surface has first electrode layer；Composite magnetic layers are formed in the first electrode layer surface, the composite magnetic layers include：First thin magnetic film, positioned at institute State first insulation film on the first thin magnetic film surface and the second thin magnetic film positioned at the first insulation film surface；Untill removing part composite magnetic layers and exposing the first insulation film, sub- magnetic junction is formed on the first insulation film surface Structure, the sub- magnetic texure include etching the second magnetosphere formed by second thin magnetic film；Cleaning is carried out to the first insulation film and sub- magnetic texure, to remove the first insulation film and sub- magnetic texure surface Impurity；After the cleaning process, the first oxide layer is formed on the sub- magnetic texure surface using the first oxidation technology；Using the first oxide layer and sub- magnetic texure as mask, the part that is covered using the second oxidation technology to non-quilt magnetic texure First thin magnetic film is aoxidized and forms the second oxide layer, and positioned at part the first thin magnetic film shape of sub- magnetic texure bottom Into the first magnetosphere；The insulation film of part first of the first oxide layer, the second oxide layer and the covering of non-quilt magnetic texure is removed, positioned at son The insulation film of part first of magnetic texure bottom forms the first insulating barrier.
- 2. the forming method of MTJ as claimed in claim 1, it is characterised in that second oxidation technology is plasma Body oxidation technology, the bias voltage of the plasma oxidation process are more than 100 volts.
- 3. the forming method of MTJ as claimed in claim 1, it is characterised in that first oxidation technology is each to same Property oxidation technology, the thickness of first oxide layer is 10 nanometers~30 nanometers.
- 4. the forming method of MTJ as claimed in claim 3, it is characterised in that first oxidation technology is remote oxygen Chemical industry skill, the flow of the gas of the long-range oxidation technology is 50sccm~200sccm.
- 5. the forming method of MTJ as claimed in claim 3, it is characterised in that first oxidation technology is plasma Body oxidation technology, the source power of the plasma oxidation process is 100 watts~500 watts, and bias power is 0 watt.
- 6. the forming method of MTJ as claimed in claim 1, it is characterised in that the method for removing part composite magnetic layers Including：Mask layer is formed in the part surface of composite magnetic layers；Using the mask layer as mask, it is straight to etch the composite magnetic layers Untill the first insulation film is exposed, sub- magnetic texure is formed on the first insulation film surface.
- 7. the forming method of MTJ as claimed in claim 6, it is characterised in that the etching composite magnetic layers Technique is anisotropic dry etch process, and anisotropic dry etch process is ion sputtering etching technics, etches gas Body includes one or more combinations in hydrogen, methane, ammonia, nitrogen.
- 8. the forming method of MTJ as claimed in claim 6, it is characterised in that exhausted in the first magnetosphere of formation and first After edge layer, the mask layer is removed.
- 9. the forming method of MTJ as claimed in claim 1, it is characterised in that the composite magnetic layers also include：Position Second electrode film in the second thin magnetic film surface.
- 10. the forming method of MTJ as claimed in claim 9, it is characterised in that after etched portions composite magnetic layers, The sub- magnetic texure formed also includes：Positioned at the second electrode lay of the second magnetic layer surface, the second electrode lay is by described Second electrode film etches to be formed.
- 11. the forming method of MTJ as claimed in claim 1, it is characterised in that the thickness of first thin magnetic film For 1 angstrom~40 angstroms.
- 12. the forming method of MTJ as claimed in claim 1, it is characterised in that the thickness of first insulating barrier is 1 Angstrom~30 angstroms.
- 13. the forming method of MTJ as claimed in claim 1, it is characterised in that also include：Forming composite magnetic layers Before, the second insulating barrier is formed in first electrode layer surface, the composite magnetic layers are formed at second surface of insulating layer.
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| KR20170034961A (en) * | 2015-09-21 | 2017-03-30 | 에스케이하이닉스 주식회사 | Electronic device and method for fabricating the same |
| CN105762275A (en) * | 2016-03-14 | 2016-07-13 | 唐山市盛泰建筑安装有限公司 | Multiferroic/piezoelectric composite structure, storage device and preparation method thereof |
| CN108232004A (en) * | 2016-12-21 | 2018-06-29 | 上海磁宇信息科技有限公司 | A kind of method that light ion sputter etching prepares magnetic tunnel junction |
| JP2019057560A (en) * | 2017-09-20 | 2019-04-11 | 東芝メモリ株式会社 | Magnetoresistance effect element and manufacturing method of magnetoresistance effect element |
| CN112531103B (en) * | 2019-09-19 | 2023-05-26 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN113838883A (en) * | 2020-06-24 | 2021-12-24 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and method for forming semiconductor structure |
| CN111864058B (en) * | 2020-07-29 | 2023-04-18 | 浙江驰拓科技有限公司 | Preparation method of storage bit and preparation method of MRAM |
| CN112201749A (en) * | 2020-09-27 | 2021-01-08 | 昕原半导体(上海)有限公司 | Preparation method of resistive random access memory |
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