CN104516138B - The preparation method of silica-based liquid crystal panel - Google Patents
The preparation method of silica-based liquid crystal panel Download PDFInfo
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- CN104516138B CN104516138B CN201310460926.4A CN201310460926A CN104516138B CN 104516138 B CN104516138 B CN 104516138B CN 201310460926 A CN201310460926 A CN 201310460926A CN 104516138 B CN104516138 B CN 104516138B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Abstract
A kind of preparation method of silica-based liquid crystal panel, including：Semiconductor substrate is provided；Metal level, the protective layer on metal level, the hard mask layer on protective layer are sequentially formed on a semiconductor substrate；The hard mask layer and protective layer are etched, some first openings are formed in hard mask layer and protective layer；Using the hard mask layer and protective layer as mask, the metal level is etched along the first opening, being formed between the metal derby of several ranks arrangement, adjacent metal block has the second opening, the surface of metal derby is light reflecting surface；Form the spacer medium layer on covering hard mask layer surface, full first opening of spacer medium layer filling and the second opening；The spacer medium layer is planarized, the surface of hard mask layer is exposed；Remove the hard mask layer；The protective layer is removed using cineration technics.Prevent metal derby surface from producing damage defect, improve the quality of dot structure.
Description
Technical field
The present invention relates to liquid crystal panel field, more particularly to a kind of preparation method of silica-based liquid crystal panel.
Background technology
LCOS (Liquid Crystal On Silicon) technology is a kind of new liquid grown up after 2000
Brilliant Display Technique, also referred to as liquid crystal on silicon Display Technique or Reflective liquid crystal displays technology.With traditional thin film transistor (TFT) liquid
Crystal panel (TFT-LCD) is compared, and liquid crystal on silicon display panel has high resolution, high-contrast, high aperture, low cost etc. excellent
Point.
Fig. 1~Fig. 6 is the cross-sectional view of existing liquid crystal on silicon display panel forming process.
With reference to Fig. 1 there is provided Semiconductor substrate 101, metal level 102, the metal are formed in the Semiconductor substrate 101
The material of layer is aluminium.
With reference to Fig. 2, the metal level 102 (referring to Fig. 1) is etched, some discrete metal derbies 103, the metal derby are formed
103 surface is the reflecting surface of light.
With reference to Fig. 3, the covering metal derby 103 and the insulating dielectric materials layer 104 of Semiconductor substrate 101, insulation are formed
The formation process of layer of dielectric material 104 is high density plasma CVD, and material is silica.
With reference to Fig. 4, the surface that the insulating dielectric materials layer exposes metal derby 103 is planarized, flatening process is change
Mechanical lapping is learned, using the surface of metal derby 103 as stop-layer during grinding.
With reference to Fig. 5, the passivation layer 105 on 104 surface of the covering metal derby 103 and insulating dielectric materials layer is formed.
With reference to Fig. 6, liquid crystal layer 106 is formed on the passivation layer 105, glass substrate 107 is formed on liquid crystal layer 106.
The metal derby surface of existing silica-based liquid crystal panel preparation method formation easily forms defect, have impact on metal derby
Reflectivity.
The content of the invention
The problem of present invention is solved is in the manufacturing process of liquid crystal on silicon display panel, to prevent from producing on metal derby surface
Defect.
To solve the above problems, the invention provides a kind of preparation method of liquid crystal on silicon display panel, including：Semiconductor
Substrate；Metal level, the protective layer on metal level, the hard mask on protective layer are sequentially formed on a semiconductor substrate
Layer；The hard mask layer and protective layer are etched, some first openings are formed in hard mask layer and protective layer；With the hard mask
Layer and protective layer are mask, etch the metal level along the first opening, form the metal derby of several ranks arrangement, adjacent metal block
Between there is the second opening, the surface of metal derby is light reflecting surface；Form the spacer medium layer on covering hard mask layer surface, institute
State full first opening of spacer medium layer filling and the second opening；The spacer medium layer is planarized, the table of hard mask layer is exposed
Face；Remove the hard mask layer；The protective layer is removed using cineration technics.
Optionally, the material of the protective layer is amorphous carbon.
Optionally, the formation process of the protective layer is chemical vapor deposition, and the gas used is acetylene and nitrogen, temperature
For 300~500 degrees Celsius, the support of chamber pressure 8~10.
Optionally, the thickness of the protective layer is 300~500 angstroms.
Optionally, the gas that the cineration technics removal protective layer is used is O2, RF source power is 300~400W, chamber
Chamber pressure is 5~8 supports, and temperature is 100~200 degrees Celsius, and the time is more than 120 seconds.
Optionally, the hard mask layer is double stacked structure, including the first mask layer and on the first mask layer
The material of second mask layer, the first mask layer and the second mask layer is differed.
Optionally, the material of second mask layer is silica, and the material of first mask layer is silicon nitride.
Optionally, the forming process of the first opening is in the mask layer and protective layer：In the second mask layer surface
Form patterned photoresist layer；Using the patterned photoresist layer as mask, the second mask layer is etched, in the second mask layer
It is middle to form the first son opening；Remove the patterned photoresist layer；Using the second mask layer as mask, etched along the first son opening
First mask layer and protective layer, form the second son opening, the second son opening and first in the first mask layer and protective layer
Son opening constitutes first and is open.
Optionally, the spacer medium layer is planarized using cmp or is etched back to technique without mask.
Optionally, the formation process of the spacer medium layer is high density plasma chemical vapor deposition.
Optionally, the material of spacer medium layer is silica.
Optionally, removed using cineration technics after the protective layer, in addition to：In metal derby and spacer medium layer surface shape
Into passivation layer.
Optionally, the material of the passivation layer is silica.
Optionally, in addition to：Inorganic matter oriented film is formed over the passivation layer；Liquid crystal layer is formed in inorganic matter oriented film；
Glass substrate is formed on liquid crystal layer.
Optionally, pixel-driving circuit, the pixel-driving circuit and metal derby phase are formed with the Semiconductor substrate
Even.
Compared with prior art, technical scheme has advantages below：
The preparation method of the liquid crystal on silicon display panel of the present invention, first in metal level formation protective layer, positioned at protective layer
On hard mask layer, then etch the hard mask layer and protective layer, some first formed in hard mask layer and protective layer and is opened
Mouthful, the metal level is etched along the first opening, being formed between the metal derby of several ranks arrangement, adjacent metal block has second to open
Mouthful, the surface of metal derby is light reflecting surface, then forms the spacer medium layer on covering hard mask layer surface, the spacer medium
Full first opening of layer filling and the second opening, then planarize the spacer medium layer, expose the surface of hard mask layer, finally
The hard mask layer is removed, the protective layer is removed using cineration technics.The presence of protective layer so that forming spacer medium layer
When, damage of the highdensity plasma to metal derby surface is prevented, in addition, the protective layer of the present invention can be gone using cineration technics
Remove, relative to wet method and dry removal processes, be also prevented from the damage to metal derby surface.
Further, the material of the protective layer is amorphous carbon, will not be to metal level when amorphous carbon formation and removal
There is damage on surface.
Further, the hard mask layer is double stacked structure, including the first mask layer and on the first mask layer
The material of second mask layer, the first mask layer and the second mask layer is differed so that the first mask layer is relative to the second mask layer
With selection ratio so that when the first son opening is formed in the first mask layer and patterned photoresist layer is removed, second covers
Film layer is still covered in the surface of protective layer, to ensure the integrality of protective layer.
Brief description of the drawings
Fig. 1~Fig. 6 is the cross-sectional view of existing liquid crystal on silicon display panel forming process；
Fig. 7~Figure 18 is the structural representation of the manufacturing process of liquid crystal on silicon display panel of the embodiment of the present invention.
Embodiment
Research finds that the metal derby surface of the manufacture craft formation of existing silica-based liquid crystal panel easily produces scratch, damage
The defects such as wound, reduce the reflectivity on metal derby surface, when light occurs by glass substrate and liquid crystal layer on metal derby surface
During reflection so that angle, intensity or polarization direction of reflection light etc. can change, it is unfavorable for improving the quality of pixel.
Further study show that, the defect Producing reason such as scratch, damage that metal derby surface is produced mainly has two aspects：
On the one hand, prior art is in order that insulating medium layer preferably fills the groove between full metal derby, typically using high density etc.
Plasma-activated Chemical Vapor Deposition technique formation insulating dielectric materials layer, it is highdensity during insulating dielectric materials layer is formed
Plasma easily bombards the surface of metal derby, and damage is caused to the surface of metal derby；On the other hand, in planarization dielectric material
During the bed of material, grinding head also easily produces scratch to the surface of metal derby or crosses the defects such as grinding so that metal derby surface it is uniform
Property reduction, in addition in process of lapping, also easily produce the defect such as residual of lapping liquid.
Therefore, the present invention proposes a kind of preparation method of liquid crystal on silicon display panel, it is therefore prevented that to metal in manufacturing process
The quality for causing the defects such as scratch, damage, improving pixel of block.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.When the embodiment of the present invention is described in detail, for purposes of illustration only, schematic diagram can disobey general ratio
Make partial enlargement, and the schematic diagram is example, and it should not be limited the scope of the invention herein.In addition, in reality
The three-dimensional space of length, width and depth should be included in making.
Fig. 7~Figure 18 is the structural representation of the manufacturing process of liquid crystal on silicon display panel of the embodiment of the present invention.
First, refer to Fig. 7, there is provided Semiconductor substrate 201；Sequentially formed in Semiconductor substrate 201 metal level 202,
Protective layer 203 on metal level 202, the hard mask layer on protective layer 203.
Drive circuit is formed with the Semiconductor substrate 201, the drive circuit is used to drive Subsequent semiconductor substrate
The dot structure work formed on 201, drive circuit is connected with the metal derby being subsequently formed.
The Semiconductor substrate 201 is multilayer lamination structure, in the present embodiment, and the Semiconductor substrate 201 includes partly leading
Some cmos devices are formed with body substrate and the dielectric layer on semiconductor base, semiconductor base, such as：Transistor
Deng being formed with some interconnection architectures in dielectric layer, interconnection architecture is connected with cmos device, interconnection architecture and cmos device are constituted
Drive circuit.It should be noted that the semiconductor devices of other purposes can also be formed in the Semiconductor substrate 201.
The metal level 202 is subsequently used for forming metal derby, and the metal level 202 can pass through deposition or sputtering technology shape
Into.In the present embodiment, the material of the metal level 202 is aluminium.
The protective layer 203 is located at the surface of metal level 202, and the one side of protective layer 203 is in high-density plasma gas
Phase depositing operation is when forming spacer medium layer, and protection metal derby will not be damaged by high-density plasma, on the other hand be to go
As stop-layer during except hard mask layer, damage to metal derby when preventing from removing hard mask layer.
The material of protective layer 203 should have certain hardness, it is easy to remove, and metal derby will not be damaged when removing,
And the material different from hard mask material layer.Being easily removed in the present invention refers to directly remove using cineration technics, grey chemical industry
Skill removes (use relative to wet method (many using acid or alkaline etch solution, easily to produce corrosion to metal derby) or dry method more
The chemically and physically bombardment effect of plasma, also easily damages the surface of metal derby), very little is damaged, and do not allow to tend to have etching
Byproduct residue (during ashing, etch by-products are gas, directly exclude etch chamber).
In the present embodiment, the material of the protective layer 203 is amorphous carbon, and the formation process of amorphous carbon is simple, can be with
Directly removed using cineration technics, and with certain hardness, thus all without right in forming process and in removal process
Metal level produces damage.It should be noted that the protective layer can also use other suitable materials.
The thickness of the protective layer 203 is 300~500 angstroms, and formation process is chemical vapor deposition, and the gas used is second
Alkynes and nitrogen, temperature are 300~500 degrees Celsius, the support of chamber pressure 8~10.
The hard mask layer is as mask layer and protective layer, in the present embodiment, and the hard mask layer is double stacked structure,
The second mask layer 205 including the first mask layer 204 and on the first mask layer 204, the first mask layer 204 and the second mask
The material of layer 205 is differed so that the first mask layer 204 relative to the second mask layer 205 there is selection to compare so that follow-up the
When the first son opening is formed in one mask layer 204 and patterned photoresist layer is removed, the second mask layer 205 is still covered in guarantor
The surface of sheath 203, to ensure the integrality of protective layer 203.
In the present embodiment, the material of second mask layer 205 is silica, and the material of first mask layer 204 is
Silicon nitride.In other embodiments of the invention, first mask layer or the second mask layer can also use other suitable materials
Material, such as metal, semi-conducting material, metallic compound etc..
Then, Fig. 8 and Fig. 9 are refer to, patterned photoresist layer 206 is formed on the surface of the second mask layer 205；With
The patterned photoresist layer 206 is mask, etches the second mask layer 205, forms some discrete in the second mask layer 205
First son opening 207.
Formed on the second mask layer 205 after photoresist layer, using the graphical photoresist layer of exposed and developed technique,
Being formed has some openings in patterned photoresist layer 206, patterned photoresist layer 206, described be open is defined the
The position of the first son opening 207 formed in two mask layers 205 and width.
Etch second mask layer 205 and use anisotropic plasma etching, the gas that plasma etching is used
Body is CxFy, such as CF4、C2F6、C4F8Deng.When etching the second mask layer 205, because the material of the second mask layer 205 is relative
There is high etching selection ratio in the first mask layer 204 so that the first mask layer 204 of the first 207 bottoms of son opening all or
Part retains so that the protective layer 203 of the first 207 bottoms of son opening is covered by the first mask layer 204, follow-up using grey chemical industry
When skill removes photoresist layer 206, the protective layer 203 of the first 207 bottoms of son opening is prevented also to be removed so that protective layer 203 is protected
Hold integrality.
Then, Figure 10 and Figure 11 are refer to, the patterned photoresist layer 206 (referring to Fig. 9) is removed；With the second mask
Layer 205 is mask, along etching first mask layers 204 of the first son opening 207 and protective layer 203, in the He of the first mask layer 204
Some the second discrete son openings 208 are formed in protective layer 203, the second son opening 208 and the first son opening 207 constitute first and opened
Mouthful, the first opening exposes the surface of metal level 202.
Remove the patterned photoresist layer 206 and use cineration technics.
Remove after the patterned photoresist layer 206, using anisotropic plasma etching industrial etching described the
One mask layer 204 and protective layer 203, form the second son opening 208, the gas that plasma etching is used is CHxFy, such as
CHF3、CH2F2Deng.
Then, Figure 12 is refer to, is mask with the hard mask layer and protective layer 203, the gold is etched along the first opening
Belong to layer 202 (referring to Figure 11), being formed between the metal derby 209 of several ranks arrangement, adjacent metal block 209 has the second opening
210, the surface of metal derby 209 is light reflecting surface.
Etch the metal level 202 and use anisotropic dry etch process, the gas used is Cl2Or HBr etc..
The metal derby 209 Semiconductor substrate 201 in ranks arrange, metal derby 209 as dot structure a part.
Then, Figure 13 is refer to, the spacer medium layer 211 on covering hard mask layer surface, the spacer medium layer 211 is formed
Full first opening of filling (including the first son opening 207 and second son opening 208) and the second 210 (referring to Figure 12) of opening.
The electric isolation that spacer medium layer 211 is used between adjacent metal block 209.The material of the spacer medium layer 211
For silica, in order to reach more preferable filling effect, the formation process of the spacer medium layer 211 is high-density plasma
Learn vapour deposition.
In the present embodiment, due to metal derby 209 surface protected seam 203 and hard mask layer cover, therefore formed every
Damage will not be caused during from dielectric layer 211 to the surface of metal derby 209.
Then, Figure 14 is refer to, 211 (referring to Figure 13) of the spacer medium layer is planarized, exposes the table of hard mask layer
Face.
In the present embodiment, the spacer medium layer 211 is planarized using cmp, with the table of the first mask layer 204
Face is stop-layer, and the material of the second mask layer 205 is identical with spacer medium 211 material of layer, is removed in grinding.Covered using first
The surface of film layer 204 is stop-layer, rather than it is that reason is to use the surface of protective layer 203 as stop-layer：The thickness of protective layer compared with
It is thin, caused metal level to damage though easily occurring grinding, in addition, protective layer material is carbon, the characteristic such as hardness of carbon is with isolating Jie
The characteristic close of matter 211 (silica) material of layer, it is not easy to judge the stop position of grinding.
In other embodiments of the invention, it can also be stop-layer by protective layer, planarize the spacer medium layer.
In other embodiments of the invention, it would however also be possible to employ be etched back to technique without mask and planarize the spacer medium
Layer.
With reference to Figure 15, second mask layer 204 (referring to Figure 14) is removed, the surface of protective layer 203 is exposed.
The technique for removing second mask layer 204 is wet etching, and the solution that wet etching is used is phosphoric acid or nitric acid.
When removing the second mask layer 204, due to the surface protected seam covering of metal derby 209, the surface of metal derby 208 will not be acid
Solution corrosion.
Referring to figs. 16 and 17 using the cineration technics removal protective layer 203 (referring to Figure 15)；In metal derby 209 and surplus
Remaining 211 surface of spacer medium layer form passivation layer 212.
Remove the protective layer 203 and use cineration technics, the gas that the cineration technics removal protective layer is used is O2, penetrate
Frequency source power is 300~400W, and chamber pressure is 5~8 supports, and temperature is 100~200 degrees Celsius, and the time is the ash more than 120 seconds
When chemical industry skill removes protective layer 203, to the loss very little on the surface of metal derby 209.
After protective layer 203 is removed, the passivation layer 212 of the covering metal derby 209 is formed, the passivation layer is used to protect
The surface of metal derby, prevents the liquid crystal being subsequently formed from directly being contacted equal to metal derby, and the passivation layer uses the material of printing opacity, than
The material of passivation layer 212 can be silica as described.
Finally, Figure 18 is refer to, after passivation layer 212 is formed, inorganic matter oriented film can also be formed on passivation layer 212
(not shown)；Liquid crystal layer 213 is formed in inorganic matter oriented film；Glass substrate 214 is formed on liquid crystal layer 213.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (15)
1. a kind of preparation method of silica-based liquid crystal panel, it is characterised in that including：
Semiconductor substrate is provided；
Metal level, the protective layer on metal level, the hard mask layer on protective layer are sequentially formed on a semiconductor substrate；
The hard mask layer and protective layer are etched, some first openings are formed in hard mask layer and protective layer；
Using the hard mask layer and protective layer as mask, the metal level is etched along the first opening, several ranks arrangement is formed
There is the second opening, the surface of metal derby is light reflecting surface between metal derby, adjacent metal block；
Form the spacer medium layer on covering hard mask layer surface, full first opening of spacer medium layer filling and the second opening；
The spacer medium layer is planarized, the surface of hard mask layer is exposed；
Remove the hard mask layer；
The protective layer is removed using cineration technics.
2. the preparation method of silica-based liquid crystal panel as claimed in claim 1, it is characterised in that the material of the protective layer is nothing
Shape carbon.
3. the preparation method of silica-based liquid crystal panel as claimed in claim 2, it is characterised in that the formation process of the protective layer
For chemical vapor deposition, the gas used is acetylene and nitrogen, and temperature is 300~500 degrees Celsius, the support of chamber pressure 8~10.
4. the preparation method of silica-based liquid crystal panel as claimed in claim 2, it is characterised in that the thickness of the protective layer is
300~500 angstroms.
5. the preparation method of silica-based liquid crystal panel as claimed in claim 4, it is characterised in that cineration technics removes the protection
The gas that layer is used is O2, RF source power is 300~400W, and chamber pressure is 5~8 supports, and temperature is 100~200 degrees Celsius,
Time is more than 120 seconds.
6. the preparation method of silica-based liquid crystal panel as claimed in claim 1, it is characterised in that the hard mask layer is double-deck heap
Stack structure, including the first mask layer and the second mask layer on the first mask layer, the first mask layer and the second mask layer
Material is differed.
7. the preparation method of silica-based liquid crystal panel as claimed in claim 6, it is characterised in that the material of second mask layer
For silica, the material of first mask layer is silicon nitride.
8. the preparation method of silica-based liquid crystal panel as claimed in claim 6, it is characterised in that in the mask layer and protective layer
First opening forming process be：Patterned photoresist layer is formed in the second mask layer surface；With described patterned
Photoresist layer is mask, etches the second mask layer, and the first son opening is formed in the second mask layer；Remove the patterned light
Photoresist layer；Using the second mask layer as mask, first mask layer and protective layer are etched along the first son opening, in the first mask layer
It is open with the second son is formed in protective layer, the second son, which is open, and the first son is open constitutes the first opening.
9. the preparation method of silica-based liquid crystal panel as claimed in claim 1, it is characterised in that the planarization spacer medium layer
Technique is etched back to using cmp or without mask.
10. the preparation method of silica-based liquid crystal panel as claimed in claim 1, it is characterised in that the shape of the spacer medium layer
It is high density plasma chemical vapor deposition into technique.
11. the preparation method of silica-based liquid crystal panel as claimed in claim 10, it is characterised in that the material of spacer medium layer is
Silica.
12. the preparation method of silica-based liquid crystal panel as claimed in claim 1, it is characterised in that institute is removed using cineration technics
State after protective layer, in addition to：In metal derby and spacer medium layer surface formation passivation layer.
13. the preparation method of silica-based liquid crystal panel as claimed in claim 12, it is characterised in that the material of the passivation layer is
Silica.
14. the preparation method of silica-based liquid crystal panel as claimed in claim 12, it is characterised in that also include：Over the passivation layer
Form inorganic matter oriented film；Liquid crystal layer is formed in inorganic matter oriented film；Glass substrate is formed on liquid crystal layer.
15. the preparation method of silica-based liquid crystal panel as claimed in claim 1, it is characterised in that shape in the Semiconductor substrate
Into there is pixel-driving circuit, the pixel-driving circuit is connected with metal derby.
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| CN201310460926.4A CN104516138B (en) | 2013-09-29 | 2013-09-29 | The preparation method of silica-based liquid crystal panel |
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| CN201310460926.4A CN104516138B (en) | 2013-09-29 | 2013-09-29 | The preparation method of silica-based liquid crystal panel |
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| CN112687528A (en) * | 2019-10-17 | 2021-04-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN111965857B (en) * | 2020-08-25 | 2024-02-02 | 济南晶正电子科技有限公司 | Preparation method of electro-optic crystal film, electro-optic crystal film and electro-optic modulator |
| CN115938926B (en) * | 2023-01-31 | 2023-06-02 | 广州粤芯半导体技术有限公司 | Method for preparing semiconductor structure and semiconductor structure |
| CN116722082B (en) * | 2023-08-07 | 2024-02-23 | 季华实验室 | Preparation method of array substrate, array substrate and display panel |
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| US7771894B2 (en) * | 2006-09-15 | 2010-08-10 | Applied Materials, Inc. | Photomask having self-masking layer and methods of etching same |
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