CN1045138C - Short-phase dry length semiconductor integrated light source - Google Patents
Short-phase dry length semiconductor integrated light source Download PDFInfo
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- CN1045138C CN1045138C CN96108672A CN96108672A CN1045138C CN 1045138 C CN1045138 C CN 1045138C CN 96108672 A CN96108672 A CN 96108672A CN 96108672 A CN96108672 A CN 96108672A CN 1045138 C CN1045138 C CN 1045138C
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- electric current
- current injection
- taper
- layer
- luminous tube
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Abstract
The present invention relates to a double heterojunction semiconductor photogenerator which comprises a luminescent tube (9) part and a traveling wave amplifier (11) part, wherein the luminescent tube (9) part is formed from a lower limiting layer (3), an active source layer (4), an upper limiting layer (5), a cover layer (6) and a top electrode (7) and a current injection strip region (8) of a luminescent tube (9); the components of the luminescent tube (9) part are all extended from a GaAs or InP single crystal wafer substrate (2); the traveling wave amplifier (11) part is formed from the same epitaxial layer, a conical current injection region (22) and an amplifier top electrode (13). The two parts are connected in series and respectively have a current injection region so as to form a semiconductor integrated optical source of the present invention; the two parts can adopt the same technological process and can be finished simultaneously. The present invention has the advantages of greatly increased output light power, simple technology and good compatibility.
Description
The present invention is a kind of light emitting semiconductor device.
Wide range short-phase dry length semiconductor light source, there is extensive use in the fields such as tissue imaging in optic fiber gyroscope, wavelength division multiplexing light communication system, health care.Present this light source mainly is a double heterojunction luminotron.Developed super radiation light emitting tube again in order to improve the Output optical power people.These luminous tubes have this several main parts to constitute: bottom electrode, n-GaAs (or InP) substrate, epitaxially grown n-AlGaAs (or InP) lower limit layer, GaAs (or InGaAsP) active layer, P-AlGaAs (or P-InP) upper limiting layer, P-GaAs (or P-InGaAs) cap rock.Inject the bar district for electric current being limited in narrower electric current, what have uses proton bombardment, and what have uses oxide-isolated, and what have adds interior current-limiting layer, and bar shaped is buried in making of having.Add one section uptake zone in order to prevent to swash the device architecture penetrate, the device that has plates anti-reflective film with one or both ends of the surface.
With the immediate prior art of the present invention be Chinese patent ZL92103592.6 " super-radiant luminotron of dip absorb area type ".This technology adopts electric current injection bar district to become the double inhibition in certain inclination angle and additional absorption district to swash with minute surface and penetrates structure, reached effective inhibition and swashed the purpose of penetrating, enlarging the superradiance working range, reduce technology difficulty.But device to go out luminous power still lower.
Purpose of the present invention just is to overcome the deficiencies in the prior art, improves the luminous power that of device.
Catch up with and state the prior art comparison of enumerating, the structure electricity of short-phase dry length semiconductor integrated light source of the present invention is epitaxial growth lower limit layer, active layer, upper limiting layer, a cap rock etc. in turn on substrate, but removed the uptake zone and be connected in series travelling-wave amplifier, electric current injects the bar district does not have the inclination angle, and docks with the taper current injection area of travelling-wave amplifier.Specific constructive form is as follows:
Short-phase dry length semiconductor integrated light source constitutes the luminous tube part by the bottom electrode on substrate, the substrate lower surface, lower limit layer, active layer, upper limiting layer, cap rock and the luminous tube top electrode that substrate top surface is grown in turn, the structures such as electric current injection bar district of fillet shape.One side end face of luminous tube is natural cleavage plane or plated film face (anti-reflective film or reflection enhancing coating), opposite side end face serial connection travelling-wave amplifier.Said travelling-wave amplifier has epitaxial layer structure identical with luminous tube and same bottom electrode, and its upper surface has the amplifier top electrode of oneself, and light output end has anti-reflective film; Travelling-wave amplifier has the taper current injection area, and the electric current that carefully corrects with luminous tube of taper injects the butt joint of bar district, and the bottom of taper is the bright dipping end of travelling-wave amplifier.
Substrate and each epitaxial loayer can select following material: n-GaAs (or InP) substrate, n-A1GaAs (or InP) lower limit layer, GaAs (or InGaAs) active layer, p-AlGaAs (or p-InP) upper limiting layer, p-GaAs (or InGaAsP) cap rock.
Active layer is a quantum well structure, can be single quantum well, and Multiple Quantum Well perhaps has the quantum well structure of ducting layer, and promptly active layer grows into GaAs or InGaAsP or InGaAs quantum well structure.
The taper current injection area that the electric current of luminous tube injects bar district and travelling-wave amplifier can form multiple different structure by multiple way.Inject bar district and taper current injection area such as forming electric current with proton bombardment way, autoxidation way, interior electric current single limitation approach, bury etc.
Have identical epitaxial layer structure just because of travelling-wave amplifier with luminous tube, and can form different version, therefore, on the manufacture method of integrated semiconductor light source of the present invention, more technical process can be arranged with distinct methods.Make luminous tube and travelling-wave amplifier and can or method such as bury with proton bombardment or oxide-isolated or autoxidation or the restriction of interior electric current, the invention is characterized in that luminous tube and travelling-wave amplifier are to finish simultaneously with same technical process, just size dimension and shape are had any different.
Description of drawings:
Fig. 1 is a proton bombardment short-phase dry length semiconductor integrated light source structural representation.
Fig. 2 is an oxide-isolated bar shaped short-phase dry length semiconductor integrated light source structural representation.
Fig. 3 is an autoxidation bar shaped short-phase dry length semiconductor integrated light source structural representation.
Fig. 4 is a bar shaped short-phase dry length semiconductor integrated light source structural representation in the substrate restriction.
Fig. 5 buries bar shaped short-phase dry length semiconductor integrated light source structural representation.
Below in conjunction with description of drawings various concrete structure of the present invention and concrete manufacture craft process: 1. proton bombardment structure
The device of this structure as shown in Figure 1.9 expression luminous tube parts, 11 expression travelling-wave amplifier parts among Fig. 1.1 is bottom electrode, and 2 is substrate, and 3 is lower limit layer, and 4 is active layer, and 5 is upper limiting layer, and 6 is cap rock.In luminous tube 9 parts, 7 is the luminous tube top electrode, and 8 for electric current injects the bar district, and 10 is the end face of luminous tube one side, can be natural cleavage plane or plated film face (anti-reflective film or anti-reflection film).In travelling-wave amplifier 11 parts, 12 is anti-reflective film, and 13 is the amplifier top electrode, and 22 are the taper current injection area.Luminous tube top electrode 7 and amplifier top electrode 13 are to inject bar district 8 at electric current to disconnect with the position that taper current injection area 22 connects, the isolation position between two top electrodes, and cap rock 6 has been corroded; The electric current of luminous tube 9 inject the both sides in bar district 8 and travelling-wave amplifier 11 in the both sides of taper current injection area 22, form proton bombardment insulation layer 14 by the proton bombardment method.
Implementing process is summarized as follows: select for use n-GaAs (or InP) as substrate 2, on GaAs substrate 2, use the thin-film epitaxy growing technology (as liquid phase epitaxial technique, molecular beam epitaxy technique, organo-metallic compound gas phase deposition technology etc.) n-AlGaAs (or InP) lower limit layer 3 of growing successively, GaAs (or InGaAsP) active layer 4, it is 5 that P-AlGaAs (or InP) goes up restriction, P-GaAs (or InGaAsP) cap rock 6.(or metallic film) makes mask then with photoresist, reserves long narrow bar shaped in the zone of luminous tube 9, reserves taper (as shown in Figure 1) in the zone of travelling-wave amplifier 11, and proton bombardment is carried out in carefully correcting and long narrow bar shaped butt joint of taper.Inject 8 both sides, bar district and taper current injection area 22 both sides formation proton bombardment insulation layer 14 at electric current like this, form fillet shape current injection area in the zone of luminous tube, form just in time taper current injection area 22 (being the taper amplifier) in the travelling-wave amplifier district with the luminous tube butt joint.Evaporate top electrode then, with etching or photoresist lift off art top electrode is separately formed luminous tube top electrode 7 and amplifier top electrode 13, use selective corrosion liquid, the P-GaAs cap rock 6 between electrode 7 and 13 is removed in corrosion, epitaxial wafer is thinned to about 100um, substrate 2 surface evaporation bottom electrodes 1, and the luminous tube side end face is natural cleavage plane or plated film 10 (anti-reflective film or reflection enhancing coating) after the cleavage, the end face coating anti reflection film 12 of amplifier one side, later on just can Integration Assembly And Checkout.The taper travelling-wave amplifier 11 that makes like this can have goodish coupling with luminous tube 9, and the light that luminous tube 9 sends can directly enter amplifier and amplify.2. oxide isolation structure
This device architecture as shown in Figure 2.The characteristics of this structure are between cap rock 6 and luminous tube top electrode 7, and between cap rock 6 and amplifier top electrode 13, the part outside electric current injection bar district 8 and taper current injection area 22 scopes has one deck oxide current separator 15.This current isolating layer 15 can be SiO
2Or Al
2O
3Film or Si
3N
4Film.In electric current injected bar district 8 and taper current injection area 22 scopes, luminous tube top electrode 7 and amplifier top electrode 13 contacted conduction with not having oxide-isolation layer in addition between the cap rock 6, form electric current and inject bar district 8 and taper current injection area 22.
In the implementing process, crystal epitaxial wafer growth technique bombards structure with proton, the epitaxial wafer good back deposit SiO that grows
2Or Al
2O
3Film or Si
3N
4Film.Photoetching corrosion goes out corresponding long narrow and taper figure, and visuals removes SiO
2Or Al
2O
3Film or Si
3N
4Film. Top electrode 7,13 can contact with cap rock 6 and conduct electricity, and forms electric current and injects bar district 8, taper current injection area 22.And between cap rock 6 beyond the current injection area 8,22 and top electrode 7,13, formed oxide current separator 15, pass through to stop electric current.3. autoxidation strip structure
This device architecture as shown in Figure 3.This structure only is applicable to GaAs substrate, AlGaAs upper limiting layer situation, and in two limiting layers, Al content preferably surpasses 70%, so that autoxidation on AlGaAs.6 on cap rock keeps on electric current injection bar district 8 and taper current injection area 22 scopes; Inject part outside bar district 8 and taper current injection area 22 scopes at electric current, upper limiting layer 5 contacts with luminous tube top electrode 7, amplifier top electrode 13 respectively, and upper limiting layer 5 autoxidations form AlxOy insulation layer 16.
Epitaxial wafer prepares back deposition SiO
2Film or Si
3N
4Film, photoetching keeps electric current injection bar district 8 and the film above the taper current injection area 22 then, carve the film above the autoxidation insulation layer 16, the shape of figure can be identical with 1, luminous tube 9 districts are fillet shape, amplifier 11 parts are taper, use selective corrosion liquid again, and the P-GaAs cap rock 6 above the oxide isolated district 16 is removed in corrosion.At H
2O steam and N
2Carry out autoxidation under the gas mixed atmosphere, do not have SiO
2Film or Si
3N
4The P-AlGaAs upper limiting layer 5 of film protection part by autoxidation, also just forms autoxidation in the both sides that electric current injects bar district 8 AlxOy insulation layer 16. all the other technologies again together 1.4. strip structure in substrate limits
This structure as shown in Figure 4.This structured substrate 2 is preferably selected P type GaAs or InP material for use.Growth has N type GaAs or InP electric current to isolate epitaxial loayer 17 between substrate 2 upper surfaces and lower limit layer, current channel 18 in electric current isolation epitaxial loayer 17 forms below electric current injects bar district 8 taper current injection areas 22.The electric current that forms butt joint on interior current channel 18 respectively injects bar district 8 taper current injection areas 22.Remainder is non-conductive owing to there is electric current to isolate epitaxial loayer 17.
With crystal technique one deck N type GaAs (or InP) current isolating layer 17 of on substrate 2, growing, current path 18 in etching with lithography corrosion process then.Electric current logical 18 is taper in amplifier 11 parts.Grow P-AlGaAs (or InP) lower limit layer 3 with crystal technique again, GaAs (or InGaAsP) active layer 4, n-AlGaAs (or InP) upper limiting layer 5, n-GaAs (or InGaAsP) cap rock 6. all the other with 1.5. bury strip structure.
This structure as shown in Figure 5.Only electric current inject part outside bar district 8 and taper current injection area 22 scopes under growth on the substrate 2 has, cover floor 19 in turn, cover floor 20 and on cover floor 21, they can be respectively the layers of covering of P type, N type and P type semiconductor material.
Crystal epitaxial wafer growth technique is with 1 for the first time.The epitaxial wafer that growth is good with lithography corrosion process electric current is injected bar district 8 and taper current injection area 22 epitaxial loayer in addition removes, and reserves fillet shape in luminous tube 9 parts, and amplifier 11 parts keep a taper current injection area.Carry out the secondary epitaxy crystal growth then, cover layer 19 to form P-AlGaAs (or InP), n-AlGaAs (or InP) covers layer 20, and p-AlGaAs (or InP) covers layer 21.All the other technologies are again with 1.
The present invention compares with super radiation light emitting tube with existing luminous tube can increase substantially output light merit Rate, and technology is simple, capacitive is good altogether.
Claims (8)
1. short-phase dry length semiconductor integrated light source, inject bar district formation such as (8) structure luminous tube (9) part by the bottom electrode (1) on substrate (2), substrate (2) lower surface, lower limit layer (3), active layer (4), upper limiting layer (5), cap rock (6) and the luminous tube top electrode (7) that substrate (2) upper surface is grown in turn, the electric current of fillet shape, it is characterized in that, be natural cleavage plane or plated film face (10) in a side end face of luminous tube (9); Opposite side end face at luminous tube (9) is serially connected with travelling-wave amplifier (11), travelling-wave amplifier (11) has epitaxial layer structure identical with luminous tube (9) and same bottom electrode (1), its upper surface has the top electrode (13) of amplifier, and its light output end has anti-reflective film (12); Travelling-wave amplifier (11) has taper current injection area (22), and the electric current that carefully corrects with luminous tube (9) of taper injects bar district (8) butt joint, and the wide end of taper is the light output end of the row big device of ripple (11).
2. according to the described short-phase dry length semiconductor integrated light source of claim 1, it is characterized in that said active layer (4) is a quantum well structure.
3. according to claim 1 or 2 described short-phase dry length semiconductor integrated light sources, it is characterized in that, inject the both sides of the taper current injection area (22) of the both sides in bar district (8) and travelling-wave amplifier (11) at the electric current of luminous tube (9), proton bombardment district (14) is arranged; Isolation position between luminous tube top electrode (7) and amplifier top electrode (13), cap rock (6) has been corroded.
4. according to claim 1 or 2 described short-phase dry length semiconductor integrated light sources, it is characterized in that, between cap rock (6) and the luminous tube top electrode (7), between cap rock (6) and amplifier top electrode (13), part beyond electric current injects bar district (8) and taper current injection area (22) scope has one deck oxide current separator (15).
5. according to the described short-phase dry length semiconductor integrated light source of claim 4, it is characterized in that said oxide current separator (15) is SiO
2Perhaps Al
2O
3Film or Si
3N
4Film.
6. according to claim 1 or 2 described short-phase dry length semiconductor integrated light sources, it is characterized in that cap rock (6) only keeps on electric current injection bar district (8) and taper current injection area (22) scope; Substrate (2) is the GaAs material, and upper limiting layer (5) is the AlGaAs material, and Al content is greater than 70%; Electric current injects part outside bar district (8) and taper current injection area (22) scope, and upper limiting layer (5) forms Al by the autoxidation method
xO
yInsulation layer (16).
7. according to claim 1 or 2 described short-phase dry length semiconductor integrated light sources, it is characterized in that, substrate (2) is P type GaAs or InP material, growth has n type GaAs or InP electric current to isolate epitaxial loayer (17) between substrate (2) upper surface and lower limit layer (3), electric current is isolated epitaxial loayer (17) and is corroded in electric current injection bar district (8) and taper current injection area (22) position, current channel (18) in forming below electric current injects bar district (8) and taper current injection area (22).
8. according to claim 1 or 2 described short-phase dry length semiconductor integrated light sources, it is characterized in that, only on electric current injection bar district (8) and taper current injection area (22) position, retain limiting layer (3), active layer (4), upper limiting layer (5) and cap rock (6); Electric current inject outside bar district (8) and taper current injection area (22) scope the position in turn substrate (2) go up growing cover floor (19) under having, cover floor (20) and on cover floor (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96108672A CN1045138C (en) | 1996-07-05 | 1996-07-05 | Short-phase dry length semiconductor integrated light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96108672A CN1045138C (en) | 1996-07-05 | 1996-07-05 | Short-phase dry length semiconductor integrated light source |
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| Publication Number | Publication Date |
|---|---|
| CN1173045A CN1173045A (en) | 1998-02-11 |
| CN1045138C true CN1045138C (en) | 1999-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96108672A Expired - Fee Related CN1045138C (en) | 1996-07-05 | 1996-07-05 | Short-phase dry length semiconductor integrated light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100538412C (en) * | 2006-02-21 | 2009-09-09 | 中国科学院半导体研究所 | Utilize concave area as selected area epitaxy to make the method for planar integrated active waveguide |
| DE102015116336B4 (en) * | 2015-09-28 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Semiconductor laser |
| CN112636184B (en) * | 2020-12-16 | 2022-05-10 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Mixed high-power single-frequency laser |
| CN117535790B (en) * | 2024-01-10 | 2024-04-02 | 北京大学 | Molecular beam epitaxial growth table based on acoustic surface wave in-situ injection and implementation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1068682A (en) * | 1992-05-19 | 1993-02-03 | 吉林大学 | Super-radiant luminotron of dip absorb area type |
-
1996
- 1996-07-05 CN CN96108672A patent/CN1045138C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1068682A (en) * | 1992-05-19 | 1993-02-03 | 吉林大学 | Super-radiant luminotron of dip absorb area type |
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| Publication number | Publication date |
|---|---|
| CN1173045A (en) | 1998-02-11 |
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