CN112636184B - Mixed high-power single-frequency laser - Google Patents
Mixed high-power single-frequency laser Download PDFInfo
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- CN112636184B CN112636184B CN202011494276.1A CN202011494276A CN112636184B CN 112636184 B CN112636184 B CN 112636184B CN 202011494276 A CN202011494276 A CN 202011494276A CN 112636184 B CN112636184 B CN 112636184B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
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Abstract
The invention relates to a mixed high-power single-frequency laser, which comprises an optical fiber seed source unit, a semiconductor optical amplification unit and a 780nm single-mode polarization-maintaining optical fiber; the optical fiber seed source unit and the semiconductor optical amplification unit are connected through a 780nm single-mode polarization-maintaining optical fiber; the hybrid single-frequency laser outputs high-power linear polarization single-frequency laser through 780nm single-mode polarization-maintaining optical fiber. The invention has the advantages of both a high-power single-frequency fiber laser and a single-frequency semiconductor laser, simplifies the light path structure, reduces the number of active optical devices, reduces the system power consumption and the system complexity and can better meet the requirements of engineering application on the premise of not influencing the single-frequency performance of the laser.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a mixed high-power single-frequency laser adopting a single-frequency optical fiber seed source and a semiconductor optical amplifier, and particularly relates to application of the laser to a cold atom interferometer.
Background
The measurement precision of cold atom interferometers (cold atom gyroscopes, atom gravimeters and gravity gradiometers) based on substance wave interference reaches or exceeds that of similar instruments in the traditional system, the high-precision sensitive measurement capability of the cold atom interferometers is verified, and the cold atom interferometers have extremely high application value in the aspects of high-precision autonomous navigation capability, national gravitational field construction and the like. Cold atom interferometers are moving towards further improvements in accuracy and commercialization.
The single-frequency laser participates in all physical processes of atom control in the cold atom interferometer, and is necessary work for carrying out precise control on atoms. Are currently in commercial use87A780 nm high-power single-frequency laser adopted by the Rb atom interferometer is an MOPA system and is specifically divided into an optical fiber and a semiconductor.
The 780nm high-power single-frequency fiber laser adopts a 1560nm low-power low-phase noise seed source, generates 1560nm high-power fundamental frequency light through a fiber amplifier, and obtains 780nm watt-level single-frequency laser output through a frequency doubling process, as shown in figure 1. The mode well utilizes the advantage of ultralow noise of the 1560nm single-frequency fiber laser seed source, but has the following problems: the power amplification stage needs to adopt multi-stage amplification to achieve ten watt-stage 1560nm output, and the whole system is complex and has larger power consumption; the heat load is large in the frequency doubling process, and the power stability of 780nm laser is easily influenced by the environmental temperature (the frequency doubling crystal directly influences the frequency doubling efficiency); after frequency doubling, more fundamental frequency light (1560nm) remains.
The 780nm high-power single-frequency semiconductor laser adopts a 780nm low-power semiconductor laser seed source, and 780nm watt-level single-frequency laser output is directly obtained through a semiconductor optical amplifier, as shown in fig. 2. In the mode, only 2 active optical devices and a few passive optical devices are needed, the system complexity is low, power amplification is realized by directly adopting electro-optic conversion, and the system power consumption is low. However, even if the 780nm external cavity seed source is adopted, the phase noise of the 780nm semiconductor laser seed source is still higher than that of the 1560nm optical fiber seed source, which is not beneficial to further improving the precision of the cold atom interferometer system.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides a hybrid high-power single-frequency laser combining an optical fiber seed source and semiconductor optical amplification, gives consideration to the advantages of the high-power single-frequency optical fiber laser and a single-frequency semiconductor laser, simplifies the optical path structure, reduces the number of active optical devices on the premise of not influencing the single-frequency performance of the laser, simultaneously reduces the power consumption and the complexity of a system, and can better meet the requirements of practical application.
The technical scheme for solving the technical problems is as follows: a mixed single-frequency laser comprises an optical fiber seed source unit and a semiconductor optical amplification unit, wherein the optical fiber seed source unit and the semiconductor optical amplification unit are connected through a 780nm single-mode polarization-maintaining optical fiber. The laser outputs high-power linear polarization single-frequency laser through 780nm single-mode polarization-maintaining optical fiber.
The 780nm optical fiber seed source with low phase noise is obtained through intracavity resonance frequency doubling, and is amplified through different types of semiconductor optical amplifiers, so that the complexity and power consumption of the system are reduced, and the power stability is improved.
And the semiconductor optical amplification unit is utilized to amplify the power of the seed light through direct electro-optic conversion, so that the power consumption of the system is reduced.
Further, the optical fiber seed source unit includes: the laser comprises a 1560nm single-frequency laser seed source, a 1560nm optical isolator, a 1560nm fiber coupling mirror, a first concave mirror, a Periodically Poled Lithium Niobate (PPLN) frequency doubling crystal, a second concave mirror, a dichroic mirror, an absorption plate, a 780nm half-wave plate, a 780nm fiber coupling mirror and a semiconductor Cooler (TEC) for performing high-precision temperature control on a frequency doubling component.
Wherein, polarization maintaining fusion welding treatment is carried out between the 1560nm single-frequency laser seed source and the 1560nm optical isolator and between the 1560nm optical isolator and the 1560nm fiber coupling mirror through 1560nm single-mode polarization maintaining fiber; the 780nm optical fiber coupling mirror is connected with the semiconductor optical amplification unit through a 780nm single-mode polarization-maintaining optical fiber.
The 1560nm optical fiber coupling mirror converts the seed light into space collimated light, the first concave mirror and the second concave mirror form a confocal cavity, and the PPLN frequency doubling crystal is placed in the center of the confocal cavity; the intracavity fundamental frequency power and the frequency doubling stroke are increased through intracavity resonance to improve the frequency doubling conversion efficiency.
The dichroscope, the 780nm half-wave plate and the 780nm optical fiber coupling mirror are sequentially arranged on an emergent light path of the second concave mirror, the dichroscope is obliquely arranged and used for filtering 1560nm fundamental frequency light and residual pump light from an optical axis, and the light absorption plate is positioned on the side of the dichroscope and used for absorbing the 1560nm fundamental frequency light and the residual pump light filtered by the dichroscope. The spectral purity of the output laser is improved by filtering the fundamental frequency light and the pump light in the seed source through the dichroic mirror and the light absorption plate.
The 1560nm optical isolator is used for isolating 1560nm back scattering light, and the 1560nm optical fiber coupler is used for realizing the conversion of 1560nm space light and optical fiber waveguide; the first concave mirror (1560nm and 780nm high reflection), the PPLN frequency doubling crystal and the second concave mirror (1560nm high reflection and 780nm high transmission) jointly realize intracavity resonance frequency doubling, and the light intensity and frequency doubling efficiency of fundamental frequency light are improved; the dichroic mirror (high transmittance of less than 800nm and high reflectance of more than or equal to 800 nm) is used for filtering 1560nm fundamental frequency light and residual pump light from an optical axis, and the light absorption plate is used for absorbing unconverted fundamental frequency light and residual pump light; the 780nm half-wave plate is used for realizing polarization alignment of space light and polarization maintaining optical fibers, and the 780nm optical fiber coupling mirror is used for realizing high-efficiency coupling of the 780nm space light and the optical fibers.
The TEC is used for carrying out high-precision temperature control on the frequency doubling component, and the stability of the frequency doubling process is ensured. The power of the fundamental frequency light in frequency doubling is low, the heat load of the frequency doubling component is low, the TEC can perform high-precision temperature control on the fundamental frequency light, and the thermal stability in the frequency doubling process and the power stability of 780nm seed light after frequency doubling can be guaranteed.
Further, the first concave mirror is bonded to a ring-shaped Piezoelectric ceramic (PZT) for fine adjustment of the confocal cavity length.
Further, the semiconductor light amplifying unit includes: the Optical fiber coupling device comprises a 780nm Optical isolator, a 780nm Semiconductor Optical Amplifier (SOA), a tapered Optical Amplifier injection lens, an injection half-wave plate, a Semiconductor tapered Optical Amplifier, a collimating lens, a cylindrical lens, a 780nm high-power Optical isolator, a 780nm high-damage threshold half-wave plate and an Optical fiber coupling head which are sequentially arranged on the same Optical path.
The 780nm optical isolator is connected with the optical fiber seed source unit through a 780nm single-mode polarization-maintaining optical fiber, and the 780nm optical isolator, the 780nm semiconductor optical amplifier SOA and the conical optical amplifier injection lens are connected through the 780nm single-mode polarization-maintaining optical fiber.
The conical optical amplifier is adopted to realize the amplification of several watts and has higher beam quality. The optical isolator is adopted to carry out polarization purification on the output light, and a polarization filtering element is not required to be additionally used, so that the use number of optical elements is reduced, and the complexity of the system is reduced.
Further, the semiconductor optical amplification unit comprises two 780nm semiconductor optical amplifiers SOA arranged in series. The double-semiconductor optical amplifier is adopted to improve the stability of the output laser power of the laser through the saturation injection effect, and the influence of power fluctuation caused by 1560nm seed source frequency tuning on rear-end power amplification is reduced.
Compared with the existing commercial 780nm high-power single-frequency laser, the invention can obtain the following beneficial effects: obtaining a 780nm single-frequency optical fiber seed source with low phase noise by adopting an intracavity resonance enhanced frequency doubling mode; frequency doubling under low power is adopted, and the thermal stability of frequency doubling is good; the seed light is amplified in a semiconductor light amplification mode, so that the light path structure is simplified, the number of active device optical devices and the system complexity are reduced, and the electro-optic efficiency of a laser is improved; the dual SOA is utilized to realize the saturated injection and optical isolation of the conical optical amplifier for polarization filtering, and the output optical power stability and the polarization extinction ratio are improved.
The invention utilizes the semiconductor light amplification unit to amplify the power of the seed light through direct electro-optic conversion, thereby reducing the power consumption of the system.
The invention can expand the single-channel semiconductor light amplification to multi-channel amplification, and then realize the single-frequency laser output with higher power by the optical fiber beam combination method.
The invention can be used for generating 780nm single-frequency laser and can also be applied to high-power single-frequency lasers with other wavelengths which need to generate new wavelengths by utilizing the nonlinear effect and have higher requirements on output power.
Drawings
FIG. 1 is a block diagram of a 780nm single-frequency fiber laser;
FIG. 2 is a block diagram of a 780nm single frequency semiconductor laser composition;
fig. 3 is a structural diagram of a hybrid high-power single-frequency laser.
In the drawings, the components represented by the respective reference numerals are listed below:
1. 1560nm single-frequency laser seed source, 2 nm and 1560nm optical isolators;
3. 1560nm optical fiber coupling mirror, 4, a first concave mirror;
5. a PPLN frequency doubling crystal, 6, a second concave mirror;
7. a dichroic mirror 8, a light absorption plate;
9. 780nm half-wave plate, 10 and 780nm optical fiber coupling mirror, and 11 and TEC temperature control;
12. 780nm optical isolator, 13, 780nm semiconductor optical amplifier SOA;
14. the cone-shaped optical amplifier is injected into a lens, 15, and is injected into a half-wave plate;
16. a semiconductor conical light amplifier 17, a collimating lens;
18. cylindrical mirror 780nm, 19, high power optical isolator;
20. 780nm high damage threshold half-wave plate, 21, fiber coupling head.
The optical fibers between 1 and 2 and between 2 and 3 are 1560nm single-mode polarization-maintaining optical fibers;
the optical fiber between 10 and 21 is a 780nm single-mode polarization-maintaining optical fiber, and the output optical fiber is also a 780nm single-mode polarization-maintaining optical fiber.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 3, the 1560nm single-frequency laser seed source 1 may adopt a conventional DFB/DBR single-frequency fiber laser seed source, including a 976nm single-mode pump source, an optical splitter, a wavelength division multiplexer, an active grating, a polarization controller, and the like, where the polarization controller is used to ensure the polarization of output laser.
Optionally, the 1560nm single-frequency laser seed source 1 may be a commonly used DFB/DBR single-frequency fiber laser seed source, or an 1560nm semiconductor grating external cavity seed source such as RIO corporation.
In order to avoid the adverse effect of return light of a resonance frequency doubling component at the rear end of the seed source on the performance of the seed source, a 1560nm optical fiber isolator is connected. 1 and 2, and 2 and 3 are respectively processed by polarization maintaining fusion welding by 1560nm single-mode polarization maintaining optical fiber.
The seed light is converted into spatially collimated light using a 1560nm fiber coupler mirror 3. A first concave mirror 4(HR @1560nm, HR @780nm) and a second concave mirror 6(HR @1560nm, HT @780nm) are utilized to form a confocal cavity, a frequency doubling crystal is placed at the central position of the confocal cavity, the light intensity of fundamental frequency light and the frequency doubling efficiency are improved, and the first concave mirror 4 can be bonded on annular PZT and used for finely adjusting the cavity length of the confocal cavity; the dichroic mirror 7 and the light absorbing plate 8 are used to filter out the remaining fundamental light. The half-wave plate 9 and the fiber coupling mirror 10 are used for polarization alignment and fiber coupling, respectively. The cavity length of the frequency doubling crystal and the cavity length of the confocal cavity are both sensitive to temperature, and the TEC11 is adopted to carry out integral precise temperature control on frequency doubling units consisting of 3, 4, 5, 6, 7, 8, 9 and 10. The frequency doubling unit is a frequency doubling process under low power, so that the thermal stability of the frequency doubling process is better ensured.
Optionally, before the half-wave plate 9, after the dichroic mirror 7, a 780nm band-pass filter can be placed, so that stray light is further filtered, and the spectral purity of seed light is improved.
780nm single-frequency seed laser generated by frequency multiplication is injected into the optical fiber packaging semiconductor optical amplifier 13 through 780nm polarization maintaining optical fiber and an optical fiber optical isolator 12. In order to reduce the influence of power fluctuation caused by 1560 seed source frequency tuning on rear-end power amplification, the double-semiconductor optical amplifier is adopted to be connected in series to improve the stability of the output power of the laser through a saturation injection effect.
The 780nm single-frequency laser pre-amplified by the semiconductor optical amplifier realizes the transverse mode and polarization matching between the optical fiber waveguide and the optical waveguide area of the tapered optical amplifier 16 through the injection lens 14 and the half-wave plate 15. In order to achieve the output of the watt-level laser fiber, the present invention employs a tapered optical amplifier 16 that can achieve high power and good beam quality. The collimating lens 17 and the cylindrical lens 18 are used for realizing the rounding and the stigmation of the output light of the conical light amplifier and improving the coupling efficiency of the output light coupled with the rear-end optical fiber. The 780nm broadband high-power isolator 19 is used for inhibiting the influence of return light on a tapered optical amplifier in optical fiber coupling and laser application, and meanwhile, the isolator is also used for polarization filtering of output laser.
It can be understood that the 780nm high damage threshold half-wave plate 20 and the fiber coupling head 21 are used to realize the high-efficiency coupling of the space laser and the optical fiber.
It will be appreciated that in some embodiments, such as where a single frequency laser of higher power is required, a single amplification may not be sufficient for the power requirement, and multiple amplifications may be used, followed by combining the optical fibers.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (5)
1. A mixed high-power single-frequency laser is characterized by comprising an optical fiber seed source unit, a semiconductor optical amplification unit and a 780nm single-mode polarization maintaining optical fiber; the optical fiber seed source unit and the semiconductor optical amplification unit are connected through a 780nm single-mode polarization-maintaining optical fiber; the hybrid single-frequency laser outputs high-power linear polarization single-frequency laser through 780nm single-mode polarization-maintaining optical fiber;
the optical fiber seed source unit comprises: the system comprises a 1560nm single-frequency laser seed source (1), a 1560nm optical isolator (2), a 1560nm optical fiber coupling mirror (3), a first concave mirror (4), a PPLN frequency doubling crystal (5), a second concave mirror (6), a dichroic mirror (7), a light absorption plate (8), a 780nm half-wave plate (9), a 780nm optical fiber coupling mirror (10) and a TEC (11) for performing high-precision temperature control on a frequency doubling component;
wherein, polarization maintaining fusion welding treatment is carried out between the 1560nm single-frequency laser seed source (1) and the 1560nm optical isolator (2), and between the 1560nm optical isolator (2) and the 1560nm optical fiber coupling mirror (3) through 1560nm single-mode polarization maintaining optical fiber; the 780nm optical fiber coupling mirror (10) is connected with the semiconductor optical amplification unit through a 780nm single-mode polarization-maintaining optical fiber;
the 1560nm optical fiber coupling mirror (3) converts the seed light into space collimated light, the first concave mirror (4) and the second concave mirror (6) form a confocal cavity, and the PPLN frequency doubling crystal (5) is placed at the central position of the confocal cavity; the dichroic mirror (7), the 780nm half-wave plate (9) and the 780nm fiber coupling mirror (10) are sequentially arranged on an emergent light path of the second concave mirror (6), the dichroic mirror (7) is obliquely arranged and used for filtering 1560nm fundamental frequency light and residual pump light from an optical axis, and the light absorbing plate (8) is located on the side of the dichroic mirror (7) and used for absorbing the 1560nm fundamental frequency light and the residual pump light filtered by the dichroic mirror (7);
the first concave mirror (4) has high reflection to 1560nm and 780nm light; the second concave mirror (6) is highly reflective to 1560nm light and highly transparent to 780nm light; the dichroic mirror (7) is highly transparent to light with the wavelength less than 800nm and highly reflective to light with the wavelength not less than 800 nm.
2. Hybrid high power single frequency laser according to claim 1, characterized in that a 780nm band pass filter is further arranged between the dichroic mirror (7) and the half-wave plate (9).
3. The hybrid high power single frequency laser according to claim 1, characterized in that the first concave mirror (4) is bonded to an annular PZT.
4. The hybrid high power single frequency laser as claimed in claim 1, wherein the semiconductor optical amplification unit comprises: the optical isolator comprises a 780nm optical isolator (12), a 780nm semiconductor optical amplifier SOA (13), a tapered optical amplifier injection lens (14), an injection half-wave plate (15), a semiconductor tapered optical amplifier (16), a collimating lens (17), a cylindrical mirror (18), a 780nm high-power optical isolator (19), a 780nm high-damage threshold half-wave plate (20) and an optical fiber coupling head (21), which are sequentially arranged on the same optical path;
the 780nm optical isolator (12) is connected with the optical fiber seed source unit through a 780nm single-mode polarization-maintaining optical fiber, and the 780nm optical isolator (12), the 780nm semiconductor optical amplifier SOA (13) and the conical optical amplifier injection lens (14) are connected through the 780nm single-mode polarization-maintaining optical fiber.
5. Hybrid high power single frequency laser according to claim 4, characterized in that the semiconductor optical amplification unit comprises two 780nm semiconductor optical amplifiers SOAs (13) arranged in series.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1173045A (en) * | 1996-07-05 | 1998-02-11 | 吉林大学 | Short-phase dry length semiconductor integrated light source |
| US6188708B1 (en) * | 1996-11-19 | 2001-02-13 | Contraves Space Ag | Laser system and amplifying system to produce single-frequency laser irradiation |
| CN1977430A (en) * | 2004-08-12 | 2007-06-06 | 三菱电机株式会社 | Fundamental wave light source and wavelength converter |
| CN106451045A (en) * | 2016-10-26 | 2017-02-22 | 华南理工大学 | Multi-wavelength single-frequency fiber laser with short and straight cavity structure |
| CN110112648A (en) * | 2019-04-08 | 2019-08-09 | 中国科学院武汉物理与数学研究所 | Semiconductor conical laser amplifier system under one way and round trip composite mode |
| CN111900598A (en) * | 2020-07-28 | 2020-11-06 | 中国科学院半导体研究所 | Laser emitting device |
-
2020
- 2020-12-16 CN CN202011494276.1A patent/CN112636184B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1173045A (en) * | 1996-07-05 | 1998-02-11 | 吉林大学 | Short-phase dry length semiconductor integrated light source |
| US6188708B1 (en) * | 1996-11-19 | 2001-02-13 | Contraves Space Ag | Laser system and amplifying system to produce single-frequency laser irradiation |
| CN1977430A (en) * | 2004-08-12 | 2007-06-06 | 三菱电机株式会社 | Fundamental wave light source and wavelength converter |
| CN106451045A (en) * | 2016-10-26 | 2017-02-22 | 华南理工大学 | Multi-wavelength single-frequency fiber laser with short and straight cavity structure |
| CN110112648A (en) * | 2019-04-08 | 2019-08-09 | 中国科学院武汉物理与数学研究所 | Semiconductor conical laser amplifier system under one way and round trip composite mode |
| CN111900598A (en) * | 2020-07-28 | 2020-11-06 | 中国科学院半导体研究所 | Laser emitting device |
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