CN104507266A - Flexible display substrate and manufacturing method thereof - Google Patents
Flexible display substrate and manufacturing method thereof Download PDFInfo
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- CN104507266A CN104507266A CN201410783129.4A CN201410783129A CN104507266A CN 104507266 A CN104507266 A CN 104507266A CN 201410783129 A CN201410783129 A CN 201410783129A CN 104507266 A CN104507266 A CN 104507266A
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- polyimide film
- ion
- flexible display
- display substrates
- modification
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Abstract
The invention discloses a flexible display substrate and a manufacturing method thereof. The method comprises the following steps of preparing a layer of polyimide film on a rigid substrate; implanting ion into the surface of the polyimide film through an ion implantation method to obtain a modified polyimide film; preparing a display device on the modified polyimide film; separating the modified polyimide film from the rigid substrate. According to the flexible display substrate and the manufacturing method thereof, the coefficient of thermal expansion of the polyimide film can be reduced, so that the warping problem and the figure migration of the flexible display substrate are solved and improved.
Description
Technical field
The present invention relates to flexible display technologies field, particularly relate to a kind of flexible display substrates and preparation method thereof.
Background technology
General flexible display substrates mainly adopts polyimides to make as substrate, and polyimides has good hot property, electrical property etc., but polyimides is a kind of thermoplastic, and thermal coefficient of expansion is comparatively large, is generally more than 10ppm/ DEG C.In addition, usually, flexible display substrates makes on rigid substrate (being generally glass), and the thermal coefficient of expansion of glass only has 3.6ppm/ DEG C.Therefore, in the process making flexible display substrates, because the thermal coefficient of expansion difference of polyimides and glass is comparatively large, the process of heating can cause thermal expansion, and thermal expansion can cause stress problem, thus easily causes flexible display substrates warpage, map migration.
Summary of the invention
Based on this, being necessary the problem for how improving flexible display substrates warpage and map migration, proposing a kind of flexible display substrates and preparation method thereof.
A kind of flexible display substrates, comprise substrate, described substrate comprises polyimide film, and described polyimide film is doped with ion.
Wherein in an embodiment, described ion is chemical property torpescence ion.
Wherein in an embodiment, whole the region doping on the surface of described polyimide film has ion.
Wherein in an embodiment, the subregion on the surface of described polyimide film is doped with ion, and the described region doped with ion is network structure.
The present invention also provides a kind of manufacture method of flexible display substrates, and described method comprises step:
Rigid substrate is prepared one deck polyimide film;
By the method for ion implantation, by the surface of ion implantation to described polyimide film, obtain the polyimide film of modification;
On the polyimide film of described modification, prepare display device;
The polyimide film of described modification is peeled off from described rigid substrate.
Wherein in an embodiment, in the described method by ion implantation, by the surface of ion implantation to described polyimide film, before obtaining the step of the polyimide film of modification, by the method for film forming and etching, described polyimide film forms mask pattern.
Wherein in an embodiment, in the described method by ion implantation, will the surface of described polyimide film be injected into, after obtaining the step of the polyimide film of modification, described mask pattern be removed.
Wherein in an embodiment, the material forming described mask pattern is metal material.
Wherein in an embodiment, the scope of the Implantation Energy of described ion implantation be 50 kiloelectron-volts to 50 million electro-volts, the scope of the implantation dosage of described ion implantation is every square centimeter 1.0 × 10
12to 1.0 × 10
17individual ion.
Wherein in an embodiment, described ion is chemical property torpescence ion.
Above-mentioned flexible display substrates and preparation method thereof, by the method for ion implantation, by ion implantation to polyimide film, modification is carried out to polyimide film, due to the injection of ion, destroys the original covalent bond of polyimide film, generate new fragrance, alkene, carboxyl and oh group, thus improve the modulus of elasticity of polyimide film, reduce the thermal coefficient of expansion of polyimide film, thus improve warpage issues and the map migration of flexible display substrates.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the manufacture method of first embodiment of the invention flexible display substrates;
Fig. 2 is the generalized section that first embodiment of the invention intermediate ion is injected into the surface of polyimide film;
Fig. 3 is the floor map after first embodiment of the invention intermediate ion is injected into the surface of polyimide film;
Fig. 4 is the schematic flow sheet of the manufacture method of second embodiment of the invention flexible display substrates;
Fig. 5 is the generalized section that second embodiment of the invention intermediate ion is injected into the surface of polyimide film;
Fig. 6 is the floor map after second embodiment of the invention intermediate ion is injected into the surface of polyimide film.
Embodiment
For further setting forth the technological means that the present invention takes and the effect obtained, below in conjunction with accompanying drawing and preferred embodiment, to technical scheme of the present invention, carry out clear and complete description.
As shown in Figure 1, Figure 2 and Figure 3, first the manufacture method of the flexible display substrates of the first embodiment comprises the steps:, performs S200, rigid substrate 10 is prepared one deck polyimide film 11.Particularly, in the present embodiment, rigid substrate 10 is glass substrate, by the method for coating, prepares one deck polyimide film 11 at rigid substrate 10.
Then, S400 is performed, by the method for ion implantation, ion 13 is injected into the surface of polyimide film 11, obtain the polyimide film 12 of modification, ion 13 can be evenly distributed in the surface of polyimide film 11, also at random can be distributed in the surface of polyimide film 11.Particularly, in the present embodiment, the ion 13 of injection can be chemical property torpescence ion, such as, Si and He etc.When ion 13 injects, Implantation Energy be 50 kiloelectron-volts to 50 million electro-volts, the implantation dosage of the ion 13 of injection is every square centimeter 1.0 × 10
12to 1.0 × 10
17individual ion.When ion 13 is injected in polyimide film 11, ion 13 destroys the original covalent bond of polyimide film 11, generate new fragrance, alkene, carboxyl and oh group, and can active force be produced between each group, thus the modulus of elasticity of polyimides can be improved.And usually, the modulus of elasticity of material is larger, combine tightr between atom, when raising identical temperature, atomic distance change is less, thermal coefficient of expansion is also less, therefore, by regulating Implantation Energy and implantation dosage, the coefficient of expansion of polyimide film 11 can be regulated, the thermal coefficient of expansion of polyimide film 11 is reduced, makes the thermal coefficient of expansion of the thermal coefficient of expansion of the polyimide film 12 of modification and rigid substrate 10 close.
Then, perform S600, on the polyimide film 12 of modification, prepare display device.Particularly, according to the actual needs, the polyimide film 12 of modification prepares display device, such as, thin-film transistor (Thin Film Transistor, TFT) is prepared, in preparation TFT process, need to heat, thus polyimide film 11 can be caused to expand, cause the problem of warpage and map migration.From above-mentioned S400, the thermal coefficient of expansion of the polyimide film 12 of modification and the thermal coefficient of expansion of rigid substrate 10 close, thus change problem and the map migration of warpage.
Then, perform S800, the polyamide-imide film 12 of modification is peeled off from rigid substrate 10.Particularly, by under water or acid solution, steam ambient, the polyimide film 12 of modification is stripped out from rigid substrate 10, thus obtains flexible display substrates.
The manufacture method of the flexible display substrates of the second embodiment as shown in Figure 4, Figure 5 and Figure 6, first, performs S200, rigid substrate 10 is prepared one deck polyimide film 11.Particularly, in the present embodiment, rigid substrate 10 is glass substrate, by the method for coating, prepares one deck polyimide film 11 at rigid substrate 10.
Then, perform S320, by the method for film forming and etching, polyimide film 11 forms mask pattern 14.Particularly, in the present embodiment, the material that formation mask pattern 14 adopts can be metal material, on polyimide film 11, layer of metal layer is prepared by sputtering or evaporation, by the method for wet etching, metal level is processed again, thus obtaining mask pattern 14, described lithographic method is not limited to wet etching, also can be dry etching.As shown in Figure 5, as we know from the figure, polyimide film 11 is divided into two parts region by mask pattern 14, and a subregion is covered by mask pattern 14, and another subregion is not covered by mask pattern 14.It should be noted that, the shape of mask pattern 14 and size are also unrestricted, can design according to the actual needs.
Then, perform step S400, by the method for ion implantation, ion 13 is injected into the surface of polyimide film 11, obtain the polyimide film 12 of modification, the polyimide film 12 of modification comprises the region 12a not injecting the ion 13 and region 12b injecting ion.Particularly, in the present embodiment, the ion 13 of injection can be chemical property torpescence ion, such as, Si and He etc.When ion 13 injects, Implantation Energy be 50 kiloelectron-volts to 50 million electro-volts, the implantation dosage of the ion 13 of injection is every square centimeter 1.0 × 10
12to 1.0 × 10
17individual ion.Due to polyimide film 11 covering mask pattern 14, therefore, by region that mask pattern 14 covers on polyimide film 11, due to the stop of mask pattern 14, ion 13 fails to be injected into (12a shown in Fig. 6) in the polyimide film 11 below mask pattern 14, not by the region that mask pattern 14 covers, ion 13 is injected into (12b shown in Fig. 6) in polyimide film 11.When ion 13 is injected in polyimide film 11, ion 13 destroys the original covalent bond of polyimide film 11, generate new fragrance, alkene, carboxyl and oh group, and can active force be produced between each group, thus the modulus of elasticity of polyimides can be improved.And usually, the modulus of elasticity of material is larger, combine tightr between atom, when raising identical temperature, atomic distance change is less, thermal coefficient of expansion is also less, therefore, by regulating Implantation Energy and implantation dosage, the coefficient of expansion of polyimide film 11 can be regulated, the thermal coefficient of expansion of polyimide film 11 is reduced, makes the thermal coefficient of expansion of the thermal coefficient of expansion of the polyimide film 12 of modification and rigid substrate 10 close.
Then, perform step S340, mask pattern 14 is removed, as can be seen from Figure 6, by the mask of mask pattern 14, polyimide film 11 interlocks through the region that ion 13 injects, and forms network structure, therefore, except above-mentioned ion 13 destroys the original covalent bond of polyimide film 11, the network structure formed can reduce the thermal coefficient of expansion of polyimide film 11, and the swell increment of polyimide film 11 is less, and this is because network structure makes interatomic spacing diminish.
Then, perform step S600, on the polyimide film 12 of modification, prepare display device.Particularly, according to the actual needs, the polyimide film 12 of modification prepares display device, such as, thin-film transistor (Thin Film Transistor, TFT) is prepared, in preparation TFT process, need to heat, thus polyimide film 11 can be caused to expand, cause the problem of warpage and map migration.From above-mentioned S320, the thermal coefficient of expansion of the polyimide film 12 of modification reduces, thus improves problem and the map migration of warpage.
Then, perform S800, the polyamide-imide film 12 of modification is peeled off from rigid substrate 10.Particularly, by under water or acid solution, steam ambient, the polyimide film 12 of modification is stripped out from rigid substrate 10, thus obtains flexible display substrates.Because the thermal coefficient of expansion of the polyimide film 12 of modification is lower, therefore, in the process preparing flexible display substrates, improve the warpage issues of flexible display substrates, and improve the problem of map migration.
Present embodiment also provides the flexible display substrates obtained by the manufacture method of the flexible display substrates by the first above-mentioned embodiment, and this flexible display substrates comprises substrate, and this substrate is polyimide film 11, and polyimide film 11 is doped with ion 13.Particularly, ion 13 can be chemical property torpescence ion, by the method for ion implantation, ion 13 is injected in the polyimide film 11 of whole, namely whole the region doping on the surface of polyimide film 11 has ion 13, when ion 13 is injected in polyimide film 11, ion 13 destroys the original covalent bond of polyimide film 11, generate new fragrance, alkene, carboxyl and oh group, and active force can be produced between each group, thus the modulus of elasticity of polyimides can be improved.And usually, the modulus of elasticity of material is larger, combine tightr between atom, when raising identical temperature, atomic distance change is less, thermal coefficient of expansion is also less, therefore, by regulating Implantation Energy and implantation dosage, the coefficient of expansion of polyimide film 11 can be regulated, the thermal coefficient of expansion of polyimide film 11 is reduced, makes the thermal coefficient of expansion of the thermal coefficient of expansion of the polyimide film 12 of modification and rigid substrate 10 close.
In addition, present embodiment also provides the flexible display substrates obtained by the manufacture method of the flexible display substrates of the second above-mentioned embodiment, this flexible display substrates comprises substrate, this substrate is polyimide film 11, Doped ions 13 in this polyimide film 11, the region that ion 13 is formed interlocks, and forms network structure.Particularly, by the method for film forming and etching, first make mask pattern at polyimide film 11, again by the method for ion implantation, ion 13 is injected into polyimide film 11, then mask pattern is removed, thus the region that ion 13 injects interlocks, and forms network structure, as shown in Figure 6.More specifically, as described in above-mentioned second embodiment, do not repeat them here.
Above-mentioned flexible display substrates and preparation method thereof, by the method for ion implantation, ion 13 is injected into polyimide film 11, modification is carried out to polyimide film 11, due to the injection of ion, destroys the original covalent bond of polyimide film 11, generate new fragrance, alkene, carboxyl and oh group, thus improve the modulus of elasticity of polyimide film 11, reduce the thermal coefficient of expansion of polyimide film 11, thus improve warpage issues and the map migration of flexible display substrates.
In addition, by preparing mask pattern 14 on polyimide film 11, then ion 13 being injected into the surface of polyimide film 11, finally the mask pattern 14 of preparation being removed.Through the mask of mask pattern 14, polyimide film 11 interlocks through the region that ion 13 injects, form network structure, this network structure also reduces the thermal coefficient of expansion of polyimide film 11 to a certain extent, thus improves warpage issues and the map migration problem of flexible display substrates.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a flexible display substrates, comprises substrate, and described substrate comprises polyimide film, it is characterized in that, described polyimide film is doped with ion.
2. flexible display substrates according to claim 1, is characterized in that, whole the region doping on the surface of described polyimide film has ion.
3. flexible display substrates according to claim 1, is characterized in that, the subregion on the surface of described polyimide film is doped with ion, and the described region doped with ion is network structure.
4. flexible display substrates according to any one of claim 1 to 3, is characterized in that, described ion is chemical property torpescence ion.
5. a manufacture method for flexible display substrates, is characterized in that, described method comprises step:
Rigid substrate is prepared one deck polyimide film;
By the method for ion implantation, by the surface of ion implantation to described polyimide film, obtain the polyimide film of modification;
On the polyimide film of described modification, prepare display device;
The polyimide film of described modification is peeled off from described rigid substrate.
6. the manufacture method of flexible display substrates according to claim 5, it is characterized in that, in the described method by ion implantation, by the surface of ion implantation to described polyimide film, before obtaining the step of the polyimide film of modification, by the method for film forming and etching, described polyimide film forms mask pattern.
7. the manufacture method of flexible display substrates according to claim 6, it is characterized in that, in the described method by ion implantation, by the surface of ion implantation to described polyimide film, after obtaining the step of the polyimide film of modification, described mask pattern is removed.
8. the manufacture method of flexible display substrates according to claim 7, is characterized in that, the material forming described mask pattern is metal material.
9. the manufacture method of flexible display substrates according to claim 5, is characterized in that, the scope of the Implantation Energy of described ion implantation be 50 kiloelectron-volts to 50 million electro-volts, the scope of the implantation dosage of described ion implantation is every square centimeter 1.0 × 10
12to 1.0 × 10
17individual ion.
10. the manufacture method of flexible display substrates according to claim 5, is characterized in that, described ion is chemical property torpescence ion.
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| CN201410783129.4A CN104507266A (en) | 2014-12-16 | 2014-12-16 | Flexible display substrate and manufacturing method thereof |
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| CN201410783129.4A CN104507266A (en) | 2014-12-16 | 2014-12-16 | Flexible display substrate and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977277A (en) * | 2016-05-05 | 2016-09-28 | 上海天马微电子有限公司 | Flexible display panel, manufacture method thereof and flexible display apparatus |
| US10079352B2 (en) | 2016-01-18 | 2018-09-18 | Boe Technology Group Co., Ltd. | Flexible display device and manufacturing method for flexible device |
| CN108682665A (en) * | 2018-05-16 | 2018-10-19 | 清华大学 | The manufacturing method of stretchable flexible electronic device |
| CN110221481A (en) * | 2019-05-23 | 2019-09-10 | 东北大学 | A kind of polyimide composite film and preparation method thereof for Flexible Displays |
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| US20060063342A1 (en) * | 2003-04-25 | 2006-03-23 | Kazuhiro Fujikawa | Method for manufacturing semiconductor device |
| CN101407589A (en) * | 2008-11-27 | 2009-04-15 | 南京工业大学 | Preparation of low thermal expansion coefficient thermoplastic polyimide film |
| CN104094381A (en) * | 2012-02-09 | 2014-10-08 | 日产化学工业株式会社 | Film forming composition and ion implantation method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS62256428A (en) * | 1986-04-30 | 1987-11-09 | Toray Ind Inc | Manufacture of carbonaceous thin film |
| US20060063342A1 (en) * | 2003-04-25 | 2006-03-23 | Kazuhiro Fujikawa | Method for manufacturing semiconductor device |
| CN101407589A (en) * | 2008-11-27 | 2009-04-15 | 南京工业大学 | Preparation of low thermal expansion coefficient thermoplastic polyimide film |
| CN104094381A (en) * | 2012-02-09 | 2014-10-08 | 日产化学工业株式会社 | Film forming composition and ion implantation method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10079352B2 (en) | 2016-01-18 | 2018-09-18 | Boe Technology Group Co., Ltd. | Flexible display device and manufacturing method for flexible device |
| CN105977277A (en) * | 2016-05-05 | 2016-09-28 | 上海天马微电子有限公司 | Flexible display panel, manufacture method thereof and flexible display apparatus |
| CN105977277B (en) * | 2016-05-05 | 2018-08-07 | 上海天马微电子有限公司 | A kind of flexible display panels and its manufacturing method and flexible display apparatus |
| CN108682665A (en) * | 2018-05-16 | 2018-10-19 | 清华大学 | The manufacturing method of stretchable flexible electronic device |
| CN108682665B (en) * | 2018-05-16 | 2019-06-18 | 清华大学 | The manufacturing method of stretchable flexible electronic device |
| CN110221481A (en) * | 2019-05-23 | 2019-09-10 | 东北大学 | A kind of polyimide composite film and preparation method thereof for Flexible Displays |
| CN110221481B (en) * | 2019-05-23 | 2020-12-22 | 东北大学 | Polyimide composite film for flexible display and preparation method thereof |
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