CN104505369A - Flexible TFT used for flexible display back electrode and preparation technology thereof - Google Patents
Flexible TFT used for flexible display back electrode and preparation technology thereof Download PDFInfo
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- CN104505369A CN104505369A CN201410723682.9A CN201410723682A CN104505369A CN 104505369 A CN104505369 A CN 104505369A CN 201410723682 A CN201410723682 A CN 201410723682A CN 104505369 A CN104505369 A CN 104505369A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 59
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 238000007639 printing Methods 0.000 claims abstract description 16
- 239000007921 spray Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 26
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000004064 recycling Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000005452 bending Methods 0.000 abstract description 4
- 230000008602 contraction Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000007790 scraping Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
Abstract
The invention provides a flexible TFT used for a flexible display back electrode and a preparation technology thereof. Multiple units composed of gate electrodes, source electrodes and drain electrodes and filled by metal are manufactured on a flexible substrate, and carbon nanotubes contacted with the source electrodes and the drain electrodes are manufactured; then an insulating layer pattern which completely covers the carbon nanotubes and does not completely cover the source electrodes, the drain electrodes and the gate electrodes is manufactured, and the gate electrode jump wires and an insulating layer thin-film with through holes are prepared; a conductive thin-film, which fills the through holes and is contacted with the drain electrodes and solidified, is manufactured by using conductive ink; and the conductive thin-film is cut along the units so that multiple pixel electrode units are formed. A conventional flexible substrate preparation technology, which is complex, expensive and time-consuming, can be substituted so that production efficiency is enhanced and production cost is reduced. A carbon nanotube layer is prepared via spray printing without the requirement for a high-temperature working environment so that contraction and bending of the flexible base material caused by heating are not caused.
Description
Technical field
The present invention relates to a kind of flexible TFT backplate and preparation method thereof, particularly relate to a kind of flexible TFT for Flexible Displays back electrode and preparation technology thereof.
Background technology
Prevailing LCDs is just as the Display Panel of calculator, its pictorial element is by voltage Direct driver, can not have influence on other unit when a control unit, when pixel quantity is increased to greatly as with 1,000,000 timing, this mode just seems unrealistic.If pixel aligned and row, connecting line quantity can be reduced to thousands of, such problem seems really can be resolved: all pixels in row are all driven by a positive potential, and all pixels in a line are all driven by a negative potential, then row has maximum voltage with the crosspoint pixel of row and is switched state.But this method still defectiveness, although be namely that the voltage that other pixels of same a line or same row are subject to is only partial value, this part switches still can make darken pixels.
At present best solution is that each pixel is added one and attached troops to a unit in its transistor switch, and each pixel can be independently controlled.Meaning representated by the low leakage characteristic that transistor has is that the voltage being applied to pixel can not be lost arbitrarily before frame updating.This kind of circuit arrangement mode is similar to dynamic random access memory very much, and only whole framework is not build on Silicon Wafer, but is built in (Thin-Film Transistor, TFT) on the substrate of glass and so on.
Substantially all TFT substrate all non-refractories, so the manufacturing process of TFT must carry out at relatively low temperature, used silicon layer is the amorphous silicon or polysilicon layer that utilize silicide gas to produce, the more high performance TFT of development need of contemporary Display Technique is to drive LCD pixel and AMOLED pixel, it is simple that non-crystalline silicon tft has preparation technology, the advantage that homogeneity is good, but its mobility is lower, cannot meet the requirement to driving; Although low temperature polycrystalline silicon migration is higher, it needs laser assisted annealing and manufacturing cost is too high, and polysilicon volume production homogeneity is poor, cannot meet the demand that the high-resolution display of large area is produced.
Flexible Displays has frivolous, flexible feature, can be used for the display screen manufacturing the display device such as e-book, mobile phone.This class display softness can be portable, and resistance to impact is strong, can realize curling display; But current plastic-substrates, profile pattern is poor, and the projection of surperficial micron dimension can cause device failure, poor reliability; Thermal coefficient of expansion simultaneously due to different rete in transistor preparation process is different, and the growth, heat treatment etc. of film all can cause the impacts such as bending contraction to it, are unfavorable for that litho pattern is aimed at, are also unfavorable for that panel makes.
Carbon nano-tube (Carbon Nanotube, CNT) is a kind of carbon molecule of tubulose, different according to the number of plies of pipe, be divided into single wall and multi-walled carbon nano-tubes, the radial direction of pipe is very thin, only has nanoscale, is then tens of to hundreds of micron in axis.Due to the structure that it is special, carbon nano-tube has some special electrical properties, by changing manufacturing process adjustment carbon nano-tube internal structure, thus can show single insulating properties, semiconductor or metallicity in particular directions, conductivity is controlled and reach as high as 10,000 times of copper.The CNT mechaanical property of materials is excellent, and quite, waterproof, resistance toly knocks scraping for hardness and diamond; Toughness is strong, can restore to the original state immediately after stretch bending.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of flexible TFT for Flexible Displays back electrode and preparation technology thereof, make carbon nano pipe array figure in prior art in prior art and the problem making complex process loaded down with trivial details for solving, and solve the problem of high-accuracy low serious forgiveness in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of flexible TFT preparation technology for Flexible Displays back electrode, described preparation technology at least comprises: the flexible base, board that (1) provides to be provided with micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode; Described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode, this source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid; And metal is filled in the groove that described coining pattern is formed, form conducting wire; (2) make on described coining pattern and the source electrode of described each unit and drain electrode and between channel region adjoin touch but not exclusively cover the carbon nano-tube of this cell source and drain electrode; (3) layer pattern is made on the carbon nanotubes; The complete coated carbon nanotube of described layer pattern; The source electrode of described layer pattern and described each unit, drain and gate contact but not exclusively cover source electrode, the drain and gate of this unit; (4) horizontal T-shaped metal structure is prepared as grid wire jumper; The both arms of described T-shaped metal structure to be arranged on described layer pattern and to contact with the grid often arranging adjacent two unit; The source electrode of the projection on this flexible base, board of the main part of described T-shaped metal structure and each unit and overlapping and its width of draining do not exceed the width of described layer pattern; (5) on described grid wire jumper, make one deck cover described some unit and with the insulating layer of thin-film of some through holes, described some through holes are positioned on the drain electrode of described each unit; (6) in described step (5) with the insulating layer of thin-film of through hole utilizes conductive ink make layer of conductive film; Conductive ink is packed into described through hole and contacts with described drain electrode and solidify; (7) cut described conductive film along described unit and form some pixel electrode unit.
Preferably, the method that the micro-structural coining pattern in described step (1) is formed applies UV glue on described flexible base, board, and recycling tailored template and curing apparatus impress out microstructure graph on described UV glue.
Preferably, the method for filling metal in described step (1) in the groove that described coining pattern is formed is utilize plating, scrape or the method for spray printing; The metal filled is copper or silver.
Preferably, in described step (2), the method for the described carbon nano-tube of making is any one in spray printing, transfer or sputtering.
Preferably, the material of the described carbon nano-tube in described step (2) is characteristic of semiconductor.
Preferably, the method making described layer pattern in described step (3) utilizes Printing techniques on described carbon nano-tube, make polymer insulation layer and obtain.
Preferably, the technique making described grid wire jumper in described step (4) is Printing techniques.
Preferably, the drain electrode of each unit described in described step (5) there is one from the described through hole of described insulating layer of thin-film.
Preferably, the method making described conductive film in described step (6) is screen printing technique or ink-jet printing technology.
Preferably, in described step (7), the method for the described conductive film of cutting is radium-shine cutting technique.
The present invention also provides a kind of flexible TFT for Flexible Displays back electrode, and described flexible TFT at least comprises: the flexible base, board being provided with micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode; To be positioned on described coining pattern and the carbon nano-tube touched with the source electrode of described each unit and drain electrode and channel region adjoin therebetween; Be covered in the layer pattern of described carbon nano-tube completely; Source electrode, the drain and gate of described layer pattern and described each unit contact; Both arms are positioned at the T-shaped metal structure contacted on described layer pattern and with the grid of adjacent two unit, and source electrode and the drain electrode of the projection on this flexible base, board of the main part of this T-shaped metal structure and each unit have overlapping; Be positioned on described T-shaped metal structure, be covered in described some unit and with the insulating layer of thin-film of some through holes; Described through hole is positioned on the drain electrode of described each unit; Be filled in described through hole to contact and the conductive film solidified with described drain electrode; Described conductive film to be covered on described insulating layer of thin-film and separated from one another along each described unit.
Preferably, metal is filled with in the groove that described coining pattern is formed.
Preferably, described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode.
Preferably, this source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid.
Preferably, described carbon nano-tube is covered in the subregion of described each cell source and drain electrode and channel region therebetween.
Preferably, layer pattern is covered in the described source electrode of each unit, the subregion of drain and gate.
Preferably, the both arms of described T-shaped metal structure contact with the grid of two unit adjacent in every column unit.
Preferably, described T-shaped metal structure is as grid wire jumper.
Preferably, in T-shaped metal structure, the width of main part does not exceed the width of described layer pattern.
Preferably, the drain electrode of described each unit there is one from the described through hole of described insulating layer of thin-film.
As mentioned above, flexible TFT for Flexible Displays back electrode of the present invention and preparation technology thereof, there is following beneficial effect: stamping technique can utilize high-fineness template to prepare micron order and even nano level micro-structural on the flexible parent metals such as UV glue (ultraviolet stamping) and hot-setting adhesive (hot padding), technology or meticulous electroplating technology is scraped in conjunction with conductive ink, can in micro-structural the hyperfine conducting wire of filled conductive preparation of metals, and the introducing of volume to volume stamping technique makes the extensive mass low-cost production of product become possibility; Spray printing, silk-screen are full-fledged as conventional fabrication processes, and operation is perfect, and equipment perfects, be introduced into flexible TFT preparation technology and there is no unnecessary R&D costs, and complex and expensive traditional TFT preparation technology consuming time can be substituted, enhance productivity, reduce production cost; The electrology characteristic that carbon nano-tube itself is excellent and mechanical characteristic.Become semiconductor by its conductive characteristic of structure structural change changing carbon nano-tube (CNT) itself, mobility is higher than amorphous silicon and polysilicon.The hardness of CNT own is high, and toughness is strong, can carry out PROCESS FOR TREATMENT, be not limited to the conventional substrate such as glass on all kinds of base material.In this patent, carbon nanotube thin film layer is prepared by spray printing, does not need high-temperature work environment, and flexible parent metal heat shrinkable can not be caused to bend.
Accompanying drawing explanation
Fig. 1 is shown as the floor map with the flexible base, board of micro-structural coining pattern in the present invention.
Fig. 2 is shown as the floor map of the carbon nano-tube touched with source electrode and drain electrode and channel region adjoin therebetween in the present invention, coining pattern made.
Fig. 3 is shown as the floor map making layer pattern in the present invention on the carbon nanotubes.
Fig. 4 is shown as in the present invention the floor map preparing T-shaped grid wire jumper.
Fig. 5 is shown as the planar structure schematic diagram of the insulating layer of thin-film making band through hole in the present invention on grid wire jumper.
Fig. 6 is shown as the planar structure schematic diagram making conductive film in the present invention on insulating layer of thin-film.
Fig. 7 is shown as in the present invention and cuts along unit the planar structure schematic diagram that described conductive film forms some pixel electrode unit.
Element numbers explanation
10 flexible base, boards
101 grids
102 source electrodes
103 drain electrodes
11 carbon nano-tube
12 layer pattern
13 grid wire jumpers
14 insulating layer of thin-film
15 conductive films
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 7.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Flexible TFT preparation technology for Flexible Displays back electrode of the present invention comprises the following steps:
Step one: as shown in Figure 1, the floor map of the flexible base, board that what Fig. 1 represented is with micro-structural coining pattern.There is provided the flexible base, board 10 that is provided with micro-structural coining pattern, the formation method of the coining pattern of described micro-structural is preferably: on described flexible base, board, apply UV glue, and recycling tailored template and curing apparatus impress out microstructure graph on described UV glue.The yardstick of the described microstructure graph in the present invention is micro-nano rank.Described micro-structural coining pattern comprises the some unit be made up of grid 101, source electrode 102 and drain electrode 103; Described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode.This source electrode composition these two adjacent cells grid between and extend outside described matrix; As shown in Figure 1, what Fig. 1 provided is the distribution that three row two arrange; Wherein grid 101 is by spaced apart for drain electrode 103, and source electrode 102 is across between adjacent rows drain electrode 103 and grid 101, the wherein drain electrode 103 of adjacent rows and grid 101 common-source 102 each other; A wherein adjacent grid, a source electrode and a drain electrode formation described unit; That is common-source each other in the unit formed; Because the source electrode needs finally prepared are outside exposed, therefore, described source electrode extends outside grid at Fig. 1 left and right directions.In the groove that the coining pattern made is formed, fill metal in this step, form conducting wire, the method for wherein filling metal is preferably electroplated, scrape or the method for spray printing; The metal of filling in the present embodiment is copper or silver, and the metal that the present invention fills also comprises other metals outside copper removal or silver.
Step 2: as shown in Figure 2, what Fig. 2 represented is coining pattern makes with the floor map of source electrode and the carbon nano-tube contacted that drains.Make on described coining pattern and touch with the source electrode of described each unit and drain electrode and channel region adjoin therebetween but not exclusively cover the carbon nano-tube 11 of this cell source and drain electrode, that is the source electrode of described carbon nano-tube 11 and described each unit and drain electrode have overlapping region, and the source electrode of each unit and drain electrode respectively have a described carbon nano-tube 11; As shown in Figure 2, the carbon nano-tube on described each unit is also not exclusively overlapping with the drain electrode of this unit.Preferably, the method covering described carbon nano-tube in the present invention comprise in spray printing, transfer or sputtering any one.Carbon nano-tube (Carbon Nanotube, CNT) is a kind of carbon molecule of tubulose, different according to the number of plies of pipe, be divided into single wall and multi-walled carbon nano-tubes, the radial direction of pipe is very thin, only has nanoscale, is then tens of to hundreds of micron in axis.Due to the structure that it is special, carbon nano-tube has some special electrical properties, by changing manufacturing process adjustment carbon nano-tube internal structure, thus can show single insulating properties, semiconductor or metallicity in particular directions, conductivity is controlled and reach as high as 10,000 times of copper.The CNT mechaanical property of materials is excellent, and quite, waterproof, resistance toly knocks scraping for hardness and diamond; Toughness is strong, can restore to the original state immediately after stretch bending.Preferably, carbon nano-tube 11 described in the present invention presents characteristic of semiconductor.
Step 3: as shown in Figure 3, what Fig. 3 represented is the floor map making layer pattern in the present invention on the carbon nanotubes.This step makes layer pattern 12 on the carbon nanotubes; The complete coated carbon nanotube of described layer pattern; The source electrode of described layer pattern and described each unit, drain and gate contact but not exclusively cover source electrode, the drain and gate of this unit; And the channel region adjoin between the source electrode of described layer pattern and each unit, drain and gate touches.The layer pattern 12 be expressed as in layer pattern 12, Fig. 3 as the heavy black line frame in Fig. 3 only schematically covers source electrode, the drain and gate of the wherein left side and the described unit of middle two row.In the present embodiment, preferably, the method making described layer pattern utilizes Printing techniques make polymer insulation layer and obtain.
Step 4: as shown in Figure 4, Fig. 4 is shown as in the present invention the floor map preparing T-shaped grid wire jumper.This step prepares horizontal T-shaped metal structure as grid wire jumper 13; The both arms of described T-shaped metal structure to be arranged on described layer pattern 12 and to contact with the grid often arranging adjacent two unit; The source electrode of the projection on this flexible base, board of the main part of described T-shaped metal structure and each unit and overlapping and its width of draining do not exceed the width of described layer pattern.Described horizontal T-shaped metal structure refers to this grid wire jumper 13 in horizontal on described flexible base, board, that is the both arms of T-shaped metal structure are positioned over side, and its vertical portion (main part) is positioned over the opposite side of both arms.As shown in Figure 4, the both arms of described T-shaped metal structure to be arranged on described layer pattern 12 and to contact with the grid 101 often arranging adjacent two unit; The source electrode of the projection on this flexible base, board of the main part (vertical portion) of described T-shaped metal structure and each unit and overlapping and its width of draining do not exceed the width of described layer pattern 12.That is be placed in the main part (vertical portion) of the described T-shaped metal structure on each unit and have overlapping with the source electrode of this unit and drain electrode.Distance in this unit between source electrode and drain electrode is the width of raceway groove, and the main part of described T-shaped metal structure is across on described raceway groove.Preferably, the technique making described grid wire jumper in this step is Printing techniques.
Step 5: as shown in Figure 5, what Fig. 5 represented is the planar structure schematic diagram making the insulating layer of thin-film being with through hole on grid wire jumper.This step on described grid wire jumper, makes one deck cover described some unit and with the insulating layer of thin-film 14 of some through holes, described some through holes are positioned on the drain electrode of described each unit.Preferably, one is had from the described through hole of described insulating layer of thin-film on the drain electrode of each unit.The described drain electrode of each through-hole alignment unit that is on described insulating layer of thin-film 14.And whole insulating layer of thin-film is as a whole covers on described some unit.
Step 6: as shown in Figure 6, what Fig. 6 represented is the planar structure schematic diagram making conductive film in the present invention on insulating layer of thin-film.This step is with the insulating layer of thin-film of through hole utilizing conductive ink make layer of conductive film 15 in described step 5; Conductive ink is packed into described through hole and contacts with described drain electrode and solidify; Only demonstrate conductive film in Fig. 6 to cover on described insulating layer of thin-film, and the structure below described conductive film is not all shown.Preferably, the method making described conductive film is screen printing technique.Due to the existence of apertures some in insulating layer of thin-film, during silk-screen, conductive ink fills aperture and the exposed drain contact in bottom, the exposed drain electrode in bottom and turned on outside after the solidification of this conductive ink.
Step 7: as shown in Figure 7, what Fig. 7 showed is cut along described unit the planar structure schematic diagram that described conductive film forms some pixel electrode unit.Whole conductive film in Fig. 7 is formed some pixel electrode unit by after described unit cutting.Fig. 7 only demonstrates the some pixel electrode unit covered by described conductive film, and the structure below the conductive film of this some pixel electrode unit is not shown.Preferably, in this step, the method for cutting described conductive film is radium-shine cutting technique.
The present invention also provides a kind of flexible TFT for Flexible Displays back electrode, and the structural representation in each stage that described flexible TFT is formed as shown in Figures 1 to 7.Described flexible back plate at least comprises: the flexible base, board being provided with micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode; Preferably, metal is filled with in the groove that described coining pattern is formed.Described metal is copper or silver.Further preferably, described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode.That is, allly finally to be interconnected by the spaced grid of source electrode often in row, and the source electrode under each drain electrode often in row forms the common-source of this row transistor.And this source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid.To be positioned on described coining pattern and with the source electrode of described each unit and the carbon nano-tube contacted that drains; Preferably, described carbon nano-tube be covered in described each cell source and drain electrode and between the subregion of channel region.That is described carbon nano-tube not exclusively covers described each cell source and drain electrode.Be covered in the layer pattern of described carbon nano-tube completely; Source electrode, the drain and gate of described layer pattern and described each unit contact; Preferably, described layer pattern is covered in the described source electrode of each unit, the subregion of drain and gate.That is described layer pattern not exclusively covers source electrode, the drain and gate of described each unit.Both arms are positioned at the T-shaped metal structure contacted on described layer pattern and with the grid of adjacent two unit, and source electrode and the drain electrode of the projection on this flexible base, board of the main part of this T-shaped metal structure and each unit have overlapping; Preferably, in described T-shaped metal structure, the width of main part does not exceed the width of described layer pattern.Be positioned on described T-shaped metal structure, be covered in described some unit and with the insulating layer of thin-film of some through holes; Described through hole is positioned on the drain electrode of described each unit; Preferably, the drain electrode of described each unit there is one from the described through hole of described insulating layer of thin-film.Be filled in described through hole to contact and the conductive film solidified with described drain electrode; Described conductive film to be covered on described insulating layer of thin-film and separated from one another along each described unit.
The present invention utilizes micro-nano imprint technology, prepares source electrode, drain electrode, grid by scraping curing conductive ink; The connected applications of impression (Imprinting), spray printing (Ink-jetting), silk-screen (Screen Printing), has walked around high-accuracy low serious forgiveness technique necessary in traditional handicraft; The application of carbon nano-tube (CNT) material, due to itself special adjustable conductive characteristic and lower manufacture difficulty, can replace the material in characteristic of semiconductor such as amorphous silicon and polysilicon in the preparation of specific products.
In sum, the present invention's impression (Imprinting) technology can utilize high-fineness template to prepare micron order and even nano level micro-structural on the flexible parent metals such as UV glue (ultraviolet stamping) and hot-setting adhesive (hot padding), technology or meticulous electroplating technology is scraped in conjunction with conductive ink, can in micro-structural the hyperfine conducting wire of filled conductive preparation of metals, and volume to volume impression (R2RImprinting) technology introducing make the extensive mass low-cost production of product become possibility; Spray printing (Ink-jetting), silk-screen (Screen Printing) are full-fledged as conventional fabrication processes, operation is perfect, equipment perfects, be introduced into flexible TFT preparation technology and there is no unnecessary R&D costs, and complex and expensive traditional TFT preparation technology consuming time can be substituted, enhance productivity, reduce production cost; The electrology characteristic that carbon nano-tube itself is excellent and mechanical characteristic.Become semiconductor by its conductive characteristic of structure structural change changing CNT itself, mobility is higher than amorphous silicon and polysilicon.The hardness of CNT own is high, and toughness is strong, can carry out PROCESS FOR TREATMENT, be not limited to the conventional substrate such as glass on all kinds of base material.In this patent, carbon nanotube thin film layer is prepared by spray printing, does not require high-temperature work environment, and flexible parent metal heat shrinkable can not be caused to bend.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (14)
1., for a flexible TFT preparation technology for Flexible Displays back electrode, it is characterized in that, described preparation technology at least comprises:
(1) flexible base, board that is provided with micro-structural coining pattern is provided; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode; Described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode, this source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid; And metal is filled in the groove that described coining pattern is formed, form conducting wire;
(2) make on described coining pattern and the source electrode of described each unit and drain electrode and between channel region adjoin touch but not exclusively cover the carbon nano-tube of this cell source and drain electrode;
(3) layer pattern is made on the carbon nanotubes; The complete coated carbon nanotube of described layer pattern; The source electrode of described layer pattern and described each unit, drain and gate and channel region adjoin therebetween touch but not exclusively cover source electrode, the drain and gate of this unit;
(4) horizontal T-shaped metal structure is prepared as grid wire jumper; The both arms of described T-shaped metal structure to be arranged on described layer pattern and to contact with the grid often arranging adjacent two unit; The source electrode of the projection on this flexible base, board of the main part of described T-shaped metal structure and each unit and overlapping and its width of draining do not exceed the width of described layer pattern;
(5) on described grid wire jumper, make one deck cover described some unit and with the insulating layer of thin-film of some through holes, described some through holes are positioned on the drain electrode of described each unit;
(6) in described step (5) with the insulating layer of thin-film of through hole utilizes conductive ink make layer of conductive film; Conductive ink is packed into described through hole and contacts with described drain electrode and solidify;
(7) cut described conductive film along described unit and form some pixel electrode unit.
2. the flexible TFT preparation technology for Flexible Displays back electrode according to claim 1, it is characterized in that: the method that the micro-structural coining pattern in described step (1) is formed applies UV glue on described flexible base, board, recycling tailored template and curing apparatus impress out microstructure graph on described UV glue.
3. the flexible TFT preparation technology for Flexible Displays back electrode according to claim 1, is characterized in that: the method for filling metal in described step (1) in the groove that described coining pattern is formed is utilize plating, scrape or the method for spray printing; The metal filled is copper or silver.
4. the flexible TFT preparation technology for Flexible Displays back electrode according to claim 1, is characterized in that: in described step (2), the method for the described carbon nano-tube of making is any one in spray printing, transfer or sputtering.
5. for a flexible TFT for Flexible Displays back electrode, it is characterized in that: described flexible TFT at least comprises:
Be provided with the flexible base, board of micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode;
On described coining pattern and and the source electrode of described each unit and drain electrode and between the carbon nano-tube touched of channel region adjoin; Be covered in the layer pattern of described carbon nano-tube completely; The source electrode of described layer pattern and described each unit, drain and gate and channel region adjoin therebetween touch;
Both arms are positioned at the T-shaped metal structure contacted on described layer pattern and with the grid of adjacent two unit, and source electrode and the drain electrode of the projection on this flexible base, board of the main part of this T-shaped metal structure and each unit have overlapping;
Be positioned on described T-shaped metal structure, be covered in described some unit and with the insulating layer of thin-film of some through holes; Described through hole is positioned on the drain electrode of described each unit; Be filled in described through hole to contact and the conductive film solidified with described grid; Described conductive film to be covered on described insulating layer of thin-film and separated from one another along each described unit.
6. the flexible TFT for Flexible Displays back electrode according to claim 5, is characterized in that: be filled with metal in the groove that described coining pattern is formed.
7. the flexible TFT for Flexible Displays back electrode according to claim 5, is characterized in that: described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells shares a source electrode.
8. the flexible TFT for Flexible Displays back electrode according to claim 7, is characterized in that: described source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid.
9. the flexible TFT for Flexible Displays back electrode according to claim 5, is characterized in that: described carbon nano-tube be covered in described each cell source and drain electrode and between the subregion of channel region.
10. the flexible TFT for Flexible Displays back electrode according to claim 5, is characterized in that: described layer pattern is covered in the subregion of the source electrode of described each unit, drain and gate and channel region therebetween.
The 11. flexible TFT for Flexible Displays back electrode according to claim 7, is characterized in that: the both arms of described T-shaped metal structure contact with the grid of two unit adjacent in every column unit.
The 12. flexible TFT for Flexible Displays back electrode according to claim 11, is characterized in that: described T-shaped metal structure is as grid wire jumper.
The 13. flexible TFT for Flexible Displays back electrode according to claim 11, is characterized in that: in described T-shaped metal structure, the width of main part does not exceed the width of described layer pattern.
The 14. flexible TFT for Flexible Displays back electrode according to claim 5, is characterized in that: the drain electrode of described each unit has one from the described through hole of described insulating layer of thin-film.
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| CN109341727A (en) * | 2018-10-25 | 2019-02-15 | 北京机械设备研究所 | A kind of flexible extensible formula sensor |
| CN113257929A (en) * | 2018-01-18 | 2021-08-13 | 黄淮学院 | Novel photovoltaic cell |
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| CN101582444A (en) * | 2008-05-14 | 2009-11-18 | 清华大学 | Thin film transistor |
| CN102723276A (en) * | 2012-04-06 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of printed flexible carbon nanotubes thin film transistor |
| CN204481028U (en) * | 2014-12-03 | 2015-07-15 | 上海蓝沛新材料科技股份有限公司 | For the flexible TFT of Flexible Displays back electrode |
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| WO2004055919A2 (en) * | 2002-12-14 | 2004-07-01 | Plastic Logic Limited | Electronic devices |
| CN101582444A (en) * | 2008-05-14 | 2009-11-18 | 清华大学 | Thin film transistor |
| CN102723276A (en) * | 2012-04-06 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of printed flexible carbon nanotubes thin film transistor |
| CN204481028U (en) * | 2014-12-03 | 2015-07-15 | 上海蓝沛新材料科技股份有限公司 | For the flexible TFT of Flexible Displays back electrode |
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