CN104502671A - Dark current testing method of long-wave HgCdTe photovoltaic device - Google Patents
Dark current testing method of long-wave HgCdTe photovoltaic device Download PDFInfo
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Abstract
The invention discloses a dark current testing method of a long-wave HgCdTe photovoltaic device. The dark current testing method of the long-wave HgCdTe photovoltaic device comprises, step A, installing a sample into a liquid nitrogen Dewar flask, and welding leading wires by definition; step B, mounting a cold shield inside the Dewar flask and adding in a temperature sensor; step C, vacuumizing the Dewar flask; step D, connecting the Dewar flask with a semiconductor testing analyzer through testing wires; step E, performing voltage testing on the sample on the basis of the semiconductor testing analyzer and storing data; step F, analyzing the data on the basis of the semiconductor testing analyzer. The dark current testing method of the long-wave HgCdTe photovoltaic device solves the problem that the dark current of long-wave devices in the prior art cannot be rapidly and precisely measured at a low cost, and can perform nondestructive testing on the dark current of long-wave devices in batches within a short to facilitate batch parameter analysis and data statistics of the devices for technology improvement instruction.
Description
Technical field
The present invention relates to communication field, particularly relate to a kind of method of testing of long wave HgCdTe photovoltaic device dark current.
Background technology
HgCdTe infrared eye is in meteorology, the aspects such as medical treatment play a very important role, especially in recent years in anti-ballistic early warning, the effect of the military fields such as target tracking is increasing, its dark current levels and correlation noise are the key elements determining detector performance, directly have influence on target decipherment distance and the false alarm rate of infrared system, must study and the impact of reduction dark current of trying one's best.Long wave device is compared medium short wave device and is had higher dark current, in order to reduce dark current, just certainly will first monitor accurately can better carry out research improvement to it to dark current.The general detection method experimental facilities to dark current costly, preliminary work is many, and the test period is long, and some also needs by means of circuit interconnects aptitude test, and the method test point had is single, important parameter can not be solved and bring waste greatly and inconvenience to research.
Dark current for long wave device in correlation technique cannot the problem quick and precisely measured of low cost, not yet proposes effective solution at present.
Summary of the invention
Dark current for long wave device in correlation technique cannot the problem quick and precisely measured of low cost, the invention provides a kind of method of testing of long wave HgCdTe photovoltaic device dark current, in order to solve the problems of the technologies described above.
According to an aspect of the present invention, the invention provides a kind of method of testing of long wave HgCdTe photovoltaic device dark current, wherein, the method comprises: steps A, is arranged in Dewar container for liquefied nitrogen by sample, and by the good lead-in wire of definition welding; Step B, installs cold screen and adds temperature sensor in described Dewar; Step C, carries out extracting vacuum operation to Dewar container for liquefied nitrogen; Step D, connects described Dewar and semiconductor test analyser with p-wire; Step e, carries out voltage tester based on described semiconductor test analyser to described sample and preserves data; Step F, based on described semiconductor test analyser to described data analysis.
Preferably, described cold screen is the cold screen structure of bilayer be made up of c type ring, inside and outside cold screen, outer cold screen; Wherein, the cold screen surfaces of internal layer is gold-plated, diameter is 18mm, thickness 1mm, and the diameter of outer cold screen is 30mm, thickness is 0.6mm, inside and outside cold screen is closed entirely, imperforation, and the distance between inside and outside cold screen is 6mm, between the cold screen of internal layer and be lined with c type ring between cold head, between described c type ring and the cold screen of internal layer, full-filling has thermal grease conduction.
Preferably, described steps A comprises: pasted by sample on the cold head of middle survey Dewar.
Preferably, described step B comprises: around sample pad on c type ring, described c shape ring pastes the cold screen in described inner side, and on described c type ring even full-filling thermal grease conduction; The outside surface of the cold screen in inner side adds temperature sensor, then outer cold screen is installed, finally buckles window seat outside.
Preferably, described step C comprises: carry out extracting vacuum operation to Dewar container for liquefied nitrogen, until stop when vacuum tightness reaches 1torr.
Preferably, described step D comprises: in described Dewar, pour into liquid nitrogen, and carries out Real-Time Monitoring to the temperature of the cold screen of internal layer; When sensor values is stabilized in 1.05 (80k), connect described Dewar and semiconductor analysis instrument with p-wire.
Preferably, described temperature sensor installation site is on the outside surface of the cold screen of internal layer, and described temperature sensor carries out temperature calibration.Between described temperature sensor and the cold screen of internal layer, full-filling has thermal grease conduction.
Preferably, described p-wire one end is BNC radio frequency connector, and one end is miniature D type plug, and centre is set to radio-frequency cable, described radio-frequency cable is output line, insulation course, ground wire, insulation course, screen layer, insulation course, shell from inside to outside respectively, and entirety is a combined shielding body; Wherein, each junction of described p-wire is welding.
Preferably, the scope of described voltage tester is :-0.8v-0.1v, and step-length is 0.5mv, and what obtain after voltage tester is one group of data about electric current and voltage.
Preferably, described step F comprises: carry out flatness to data, data screening, difference, fitting of a polynomial data processing, obtains the change curve of dynamic resistance with voltage of dark current, finally tries to achieve reverse-biased operating resistance Rr, zero inclined resistance R0.
Beneficial effect of the present invention is as follows:
Measurement dark current is quick, and accurately, cost is low, and the time is short, can meet in the short time to batch long wave device the harmless detecting of dark current, to facilitate the parameter batch quantity analysis to device, data statistics, be used for instructing process modification.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of instructions, and can become apparent, below especially exemplified by the specific embodiment of the present invention to allow above and other objects of the present invention, feature and advantage.
Accompanying drawing explanation
Fig. 1 is the method for testing process flow diagram of the long wave HgCdTe photovoltaic device dark current according to the embodiment of the present invention one;
Fig. 2 is the dark current test structure schematic diagram according to the embodiment of the present invention two;
Fig. 3 is the test shielding line schematic diagram according to the embodiment of the present invention two;
Fig. 4 is the actual measurement dark current curve map according to the embodiment of the present invention two;
Fig. 5 be according to the data processing of the embodiment of the present invention two after dark current curve map;
Fig. 6 be according to the data processing of the embodiment of the present invention two after dark current dynamic resistance curve figure.
Embodiment
In order to the dark current solving long wave device in prior art cannot the problem quick and precisely measured of low cost, the invention provides a kind of method of testing of long wave HgCdTe photovoltaic device dark current, below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, do not limit the present invention.
In order to low cost measures the dark current of long wave device fast and accurately, and important parameter can be gone out by test result calculations, the present invention surveys based on Dewar structure in photovoltaic detector, deficiency for structure measurement dark current is improved, thus measure dark current quickly and accurately, meet the requirement of test fast in enormous quantities.
Embodiment one
Fig. 1 is the method for testing process flow diagram of the long wave HgCdTe photovoltaic device dark current according to the embodiment of the present invention one, and as shown in Figure 1, the method comprises:
Steps A, is arranged on sample in Dewar container for liquefied nitrogen, and by the good lead-in wire of definition welding.Particularly, steps A comprises: pasted by sample on the cold head of middle survey Dewar.
Step B, installs cold screen and adds temperature sensor in above-mentioned Dewar.
Step C, carries out extracting vacuum operation to above-mentioned cold screen.Particularly, step C comprises: carry out extracting vacuum operation to Dewar container for liquefied nitrogen, until stop when vacuum tightness reaches 1torr.
Step D, connects above-mentioned Dewar and semiconductor test analyser with p-wire.
Above-mentioned p-wire one end is BNC radio frequency connector, one end is miniature D type plug, centre is set to radio-frequency cable, and above-mentioned radio-frequency cable is output line, insulation course, ground wire, insulation course, screen layer, insulation course, shell from inside to outside respectively, and entirety is a combined shielding body; Wherein, each junction of above-mentioned p-wire is welding.
Step e, carries out voltage tester based on above-mentioned semiconductor test analyser to above-mentioned sample and preserves data.Wherein, the scope of this voltage tester is :-0.8v-0.1v, and step-length is 0.5mv, and what obtain after voltage tester is one group of data about electric current and voltage.
Step F, based on above-mentioned semiconductor test analyser to above-mentioned data analysis.Specifically comprise: flatness is carried out to data, data screening, difference, fitting of a polynomial data processing, obtain the change curve of dynamic resistance with voltage of dark current, finally try to achieve reverse-biased operating resistance Rr, zero inclined resistance R0.
Pass through the present embodiment, the dark current solving long wave device in prior art cannot the problem quick and precisely measured of low cost, can meet in the short time to batch long wave device the harmless detecting of dark current, to facilitate the parameter batch quantity analysis to device, data statistics, is used for instructing process modification.
Below the structure of the cold screen in the present embodiment is introduced.The cold screen structure of bilayer that cold screen is made up of c type ring, inside and outside cold screen, outer cold screen; Wherein, the cold screen surfaces of internal layer is gold-plated, diameter is 18mm, thickness 1mm, and the diameter of outer cold screen is 30mm, thickness is 0.6mm, inside and outside cold screen is closed entirely, imperforation, and the distance between inside and outside cold screen is 6mm, between the cold screen of internal layer and be lined with c type ring between cold head, between above-mentioned c type ring and the cold screen of internal layer, full-filling has thermal grease conduction.Above-mentioned c type ring can be rc ceramic ring.
Temperature sensor installation site is on the outside surface of the cold screen of internal layer, and said temperature sensor carries out temperature calibration.Between said temperature sensor and the cold screen of internal layer, full-filling has thermal grease conduction.
Based on above-mentioned cold screen structure, be introduced the implementation process of step B below, above-mentioned steps B comprises: around sample pad on c type ring, above-mentioned c shape ring pastes the cold screen in above-mentioned inner side, and on above-mentioned c type ring even full-filling thermal grease conduction; The outside surface of the cold screen in inner side adds temperature sensor, then outer cold screen is installed, finally buckles window seat outside.
Based on above-mentioned cold screen structure, be introduced the implementation process of step D below, above-mentioned steps D comprises: in Dewar, pour into liquid nitrogen, and carries out Real-Time Monitoring to the temperature of the cold screen of internal layer; When sensor values is stabilized in 1.05 (80k), connect above-mentioned Dewar and semiconductor analysis instrument with p-wire.
The present invention is directed to photovoltaic type HgCdTe long wave device, propose a kind of method of testing, make improvements based on existing Dewar container for liquefied nitrogen structure, with test dies sample as experiment material, to reach the object of harmless Measurement accuracy dark current.
Adopt general structure to be used for measuring dark current and have several difficult point:
1. the insulation effect of cold screen structure is general, and the too high meeting of ambient temperature produces too much radiation to detector, causes explorer response to produce radiation current, affects the actual value of dark current.
2. it is poor that the p-wire between testing tool and Dewar connects anti-electromagnetic interference capability, and nature and people impact it for capital, and particularly when zero inclined dark current is less, impact is very large.
4. between cold screen and cold head, heat conduction rate is slow.
5. as adopted detector and circuit interconnects, dark current is asked with integral time, also can because detector be to reasons such as the equivalent capacity of the injection efficiency of circuit and circuit are inaccurate, dark current can be caused to measure out of true, and single-spot testing result also have very large difficulty for asking for the important parameters such as dynamic resistance.
So for above deficiency, the present invention devises testing scheme as new in the next one.
Embodiment two
Fig. 2 is the dark current test structure schematic diagram according to the embodiment of the present invention two, as shown in Figure 2, the embodiment of the present invention first with the test dies of chip for specimen material, can launch to measure for pn knot itself like this, itself be a kind of nondestructive measurement, and avoid the interference introducing the foeign elements such as circuit.
In addition, in order to reduce the radiated noise of background, former individual layer is sealed cold screen to be changed into by c type ring (rc ceramic ring), the cold screen of internal layer, the structure of outer cold screen composition, c type ring is used on cold head, support the cold screen of internal layer, vacuum in the middle of double-deck cold screen can better reduce detector background and the external world carries out heat interchange, make ambient temperature lower, the cold screen of internal layer is gold-plated in addition, the energy that cold screen can be made to launch is lower, radiation current can be made less, dark current is approaching to reality value more, in addition in order to make heat conduction faster, reduce the test duration, all full-filling thermal grease conduction between c ring and the cold screen of internal layer and above temperature sensor, make to monitor cold screen sooner and drop to ideal temperature.This structure is compared to the cold screen of common sealing after tested, cooling rate is fast, background equilibrium temperature will reduce about 5K, and the radiation that gold surface compares the generation of blackbody surface is also less: on the lower side zero, and the measuring accuracy of dark current is improved 1 to 2 orders of magnitude (10
-10-10
-11a), the measurement result of the external large-scale precision instrument of fundamental sum is identical.
And the common test line of connecting test Dewar and IV tester changes radio frequency electrical cable into, p-wire miniature D type plug, three layers of shielded cable, BNC radio frequency connector forms, test shielding line schematic diagram as shown in Figure 3, test cable line skin is a closed electromagnetic shield, can well completely cut off ambient lighting, machine, the artificial Electromagnetic Interference waiting generation, through actual measurement, after enabling the radio-frequency cable of core, the electric signal impact that external electromagnetic ripple produces test is 10
-13magnitude, compares common test line and will improve 1 to 2 orders of magnitude.
Tester is Agilent 4156 Semiconductor Parameter Analyzer, be step-length with 0.5mv during measurement, it is variation range from-0.8v to 0.1v, measure the change of sample dark current with bias voltage, obtain the relation data of one group of electric current and voltage, actual measurement dark current curve map as shown in Figure 4, it is carried out to the process such as flatness difference fitting of a polynomial, obtain dark current dynamic resistance, electric current, the relation of voltage, dark current curve map after data processing as shown in Figure 5, and the dark current dynamic resistance curve figure after the data processing shown in Fig. 6, finally try to achieve relevant important parameter.
Through comparing, dark current curve (as shown in Figure 4) and the external dark current curve through exact instrument measurement of experiment gained are substantially identical, peak value precision when dark current zero is inclined is also at the same order of magnitude, Test System Noise is also very little on the impact of dark current, can think that experiment curv is exactly the true dark current of long wave device.
Based on above-mentioned thinking, below by preferred embodiment, technical scheme of the present invention is further illustrated.
Embodiment three
The method of testing of the long wave HgCdTe photovoltaic device dark current of the present embodiment is: first pasted by sample on the cold head of middle survey Dewar, and weld according to definition, then c type ring on padding around sample, c shape ring is pasted the gold-plated cold screen in inner side, and on c type ceramic ring even full-filling thermal grease conduction, then on the cold screen outside surface in inner side, temperature sensor is added, then outer cold screen is installed, finally buckle window seat outside, then vacuumize, vacuum tightness reaches 1torr and stops, then in test Dewar, liquid nitrogen is poured into, and Real-Time Monitoring is carried out to the temperature of the cold screen of internal layer, when sensor values is stabilized in 1.05 (80k) left and right, connect Dewar and semiconductor analysis instrument, carry out the IV test of sample, test result as shown in Figure 4, finally the smoothing degree of data-signal etc. is processed to eliminate further noise, result as shown in Figure 5, difference and fitting of a polynomial are being carried out to dark current, obtain the change curve of dynamic resistance with voltage of dark current, and try to achieve actual Rr=9.56511E9 Ω and R0=1.69227E6 Ω, curve as shown in Figure 6.
Technical scheme of the present invention is a kind of fast method detected for long wave HgCdTe detector dark current, the method utilizes Dewar container for liquefied nitrogen structure suitably to improve, in conjunction with other means, reduce ground unrest and outside electromagnetic interference, the collection of dark current tiny signal can be met and utilize data can ask for the test request of dark current dynamic resistance, the peculiar point of the present invention is: measure dark current quick, accurately, cost is low, time is short, can meet the dark current Non-Destructive Testing to batch long wave device in the short time.
Although be example object, disclose the preferred embodiments of the present invention, it is also possible for those skilled in the art will recognize various improvement, increase and replacement, and therefore, scope of the present invention should be not limited to above-described embodiment.
Claims (10)
1. a method of testing for long wave HgCdTe photovoltaic device dark current, it is characterized in that, the method comprises:
Steps A, is arranged on sample in Dewar container for liquefied nitrogen, and by the good lead-in wire of definition welding;
Step B, installs cold screen and adds temperature sensor in described Dewar;
Step C, carries out extracting vacuum operation to described Dewar container for liquefied nitrogen;
Step D, connects described Dewar and semiconductor test analyser with p-wire;
Step e, carries out voltage tester based on described semiconductor test analyser to described sample and preserves data;
Step F, based on described semiconductor test analyser to described data analysis.
2. method of testing as claimed in claim 1, is characterized in that,
The cold screen structure of bilayer that described cold screen is made up of c type ring, inside and outside cold screen, outer cold screen; Wherein, the cold screen surfaces of internal layer is gold-plated, diameter is 18mm, thickness 1mm, and the diameter of outer cold screen is 30mm, thickness is 0.6mm, inside and outside cold screen is closed entirely, imperforation, and the distance between inside and outside cold screen is 6mm, between the cold screen of internal layer and be lined with c type ring between cold head, between described c type ring and the cold screen of internal layer, full-filling has thermal grease conduction.
3. method of testing as claimed in claim 1, it is characterized in that, described steps A comprises:
Sample is pasted on the cold head of middle survey Dewar.
4. method of testing as claimed in claim 2, it is characterized in that, described step B comprises:
Around sample pad on c type ring, described c shape ring pastes the cold screen in described inner side, and on described c type ring even full-filling thermal grease conduction;
The outside surface of the cold screen in inner side adds temperature sensor, then outer cold screen is installed, finally buckles window seat outside.
5. method of testing as claimed in claim 1, it is characterized in that, described step C comprises:
Extracting vacuum operation is carried out to described Dewar container for liquefied nitrogen, until stop when vacuum tightness reaches 1torr.
6. method of testing as claimed in claim 2, it is characterized in that, described step D comprises:
In described Dewar, pour into liquid nitrogen, and Real-Time Monitoring is carried out to the temperature of the cold screen of internal layer;
When sensor values is stabilized in 1.05 (80k), connect described Dewar and semiconductor analysis instrument with p-wire.
7. method of testing as claimed in claim 2, is characterized in that,
Described temperature sensor installation site is on the outside surface of the cold screen of internal layer, and described temperature sensor carries out temperature calibration.Between described temperature sensor and the cold screen of internal layer, full-filling has thermal grease conduction.
8. method of testing as claimed in claim 1, is characterized in that,
Described p-wire one end is BNC radio frequency connector, one end is miniature D type plug, centre is set to radio-frequency cable, and described radio-frequency cable is output line, insulation course, ground wire, insulation course, screen layer, insulation course, shell from inside to outside respectively, and entirety is a combined shielding body; Wherein, each junction of described p-wire is welding.
9. method of testing as claimed in claim 1, is characterized in that,
The scope of described voltage tester is :-0.8v-0.1v, and step-length is 0.5mv, and what obtain after voltage tester is one group of data about electric current and voltage.
10. method of testing as claimed in claim 1, it is characterized in that, described step F, comprising:
Flatness is carried out to data, data screening, difference, fitting of a polynomial data processing, obtain the change curve of dynamic resistance with voltage of dark current, finally try to achieve reverse-biased operating resistance Rr, zero inclined resistance R0.
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| CN110887570A (en) * | 2019-11-07 | 2020-03-17 | 中国电子科技集团公司第十一研究所 | Dewar assembly, infrared detector and assembling method of Dewar assembly |
| CN114966360A (en) * | 2022-07-27 | 2022-08-30 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110062878A (en) * | 2016-12-06 | 2019-07-26 | 赛峰电子与防务公司 | System for detecting electromagnetic radiation |
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| CN114966360A (en) * | 2022-07-27 | 2022-08-30 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
| CN114966360B (en) * | 2022-07-27 | 2022-10-25 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
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