CN104471669B - 带电粒子多子束光刻系统和冷却配置制造方法 - Google Patents

带电粒子多子束光刻系统和冷却配置制造方法 Download PDF

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Publication number
CN104471669B
CN104471669B CN201380037560.8A CN201380037560A CN104471669B CN 104471669 B CN104471669 B CN 104471669B CN 201380037560 A CN201380037560 A CN 201380037560A CN 104471669 B CN104471669 B CN 104471669B
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CN
China
Prior art keywords
cooling
plate
beamlet
shaped body
apertures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380037560.8A
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English (en)
Chinese (zh)
Other versions
CN104471669A (zh
Inventor
J.P.斯普伦杰斯
C.奥滕
R.贾杰
S.W.H.K.斯廷布林克
J.J.科宁
W.H.厄尔巴努斯
A.H.V.范维恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Mapper Lithopraphy IP BV
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Publication of CN104471669A publication Critical patent/CN104471669A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201380037560.8A 2012-05-14 2013-05-14 带电粒子多子束光刻系统和冷却配置制造方法 Active CN104471669B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646398P 2012-05-14 2012-05-14
US61/646,398 2012-05-14
PCT/EP2013/059948 WO2013171216A1 (en) 2012-05-14 2013-05-14 Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Publications (2)

Publication Number Publication Date
CN104471669A CN104471669A (zh) 2015-03-25
CN104471669B true CN104471669B (zh) 2017-02-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380037560.8A Active CN104471669B (zh) 2012-05-14 2013-05-14 带电粒子多子束光刻系统和冷却配置制造方法

Country Status (6)

Country Link
EP (1) EP2850635B1 (cg-RX-API-DMAC7.html)
JP (1) JP5973061B2 (cg-RX-API-DMAC7.html)
KR (1) KR101945964B1 (cg-RX-API-DMAC7.html)
CN (1) CN104471669B (cg-RX-API-DMAC7.html)
NL (1) NL2010799C2 (cg-RX-API-DMAC7.html)
WO (1) WO2013171216A1 (cg-RX-API-DMAC7.html)

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US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
TW201401330A (zh) 2012-05-14 2014-01-01 Mapper Lithography Ip Bv 帶電粒子微影系統和射束產生器
NL2013437B1 (en) 2013-09-07 2016-05-18 Mapper Lithography Ip Bv Target processing unit.
EP3069366B1 (en) * 2013-11-14 2022-01-05 ASML Netherlands B.V. Multi-electrode stack arrangement
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
US9829804B1 (en) 2016-07-28 2017-11-28 Mapper Lithography Ip B.V. Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system
CN108121164B (zh) * 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法
CN111213232B (zh) * 2017-08-28 2024-07-23 Asml荷兰有限公司 具有预定启动值的存储器件
US12287151B2 (en) * 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

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JP2000348662A (ja) * 1999-06-02 2000-12-15 Nikon Corp 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法
JP2006140267A (ja) * 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
CN1902551A (zh) * 2003-12-31 2007-01-24 Asml荷兰有限公司 光刻装置,器件制造方法以及所制的器件
CN1936709A (zh) * 2005-09-06 2007-03-28 Asml荷兰有限公司 光刻方法

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AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6046457A (en) * 1998-01-09 2000-04-04 International Business Machines Corporation Charged particle beam apparatus having anticontamination means
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
US6563124B2 (en) 2001-03-21 2003-05-13 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
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AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
CN1759465B (zh) 2003-03-10 2010-06-16 迈普尔平版印刷Ip有限公司 用于产生多个小波束的装置
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
EP1830384B1 (en) 2003-05-28 2011-09-14 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
DE602004010824T2 (de) 2003-07-30 2008-12-24 Mapper Lithography Ip B.V. Modulator-schaltkreise
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JP5253532B2 (ja) * 2011-03-01 2013-07-31 キヤノン株式会社 偏向器アレイ、偏向器アレイの製造方法、描画装置、および物品の製造方法
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US10168208B2 (en) 2015-04-03 2019-01-01 Hitachi High-Technologies Corporation Light amount detection device, immune analyzing apparatus and charged particle beam apparatus that each use the light amount detection device

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JP2000348662A (ja) * 1999-06-02 2000-12-15 Nikon Corp 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法
CN1902551A (zh) * 2003-12-31 2007-01-24 Asml荷兰有限公司 光刻装置,器件制造方法以及所制的器件
JP2006140267A (ja) * 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
CN1936709A (zh) * 2005-09-06 2007-03-28 Asml荷兰有限公司 光刻方法

Also Published As

Publication number Publication date
WO2013171216A4 (en) 2014-04-10
EP2850635B1 (en) 2016-04-27
KR101945964B1 (ko) 2019-02-11
KR20150010992A (ko) 2015-01-29
NL2010799A (en) 2013-11-18
WO2013171216A1 (en) 2013-11-21
NL2010799C2 (en) 2014-02-03
CN104471669A (zh) 2015-03-25
JP2015521385A (ja) 2015-07-27
JP5973061B2 (ja) 2016-08-23
EP2850635A1 (en) 2015-03-25
WO2013171216A9 (en) 2014-02-20

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Effective date of registration: 20190430

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: About Holland

Patentee before: Mapper Lithography IP B. V.