CN104467774A - Switch network circuit with solid switch - Google Patents

Switch network circuit with solid switch Download PDF

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Publication number
CN104467774A
CN104467774A CN201310311310.0A CN201310311310A CN104467774A CN 104467774 A CN104467774 A CN 104467774A CN 201310311310 A CN201310311310 A CN 201310311310A CN 104467774 A CN104467774 A CN 104467774A
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cell
field effect
effect transistor
type field
connect
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CN201310311310.0A
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赵恩海
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Yancheng Huizhong New Energy Technology Co Ltd
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Abstract

The invention relates to a switch network circuit with a solid switch. According to the circuit, the solid switch containing a semiconductor device is used. Positive and negative electrodes of all cells in the series connection cell group are led out and connected to the input terminal and the output terminal of the switch network circuit; and voltage measurement and balancing management are carried out on corresponding cells by the input and output terminals.

Description

A kind of switching network circuit adopting solid switch
Technical field
The present invention relates to a kind of switching network circuit adopting solid switch.The solid switch that this circuit adopts semiconductor device to form, is drawn out on the input/output terminal of this switching network circuit by the positive and negative electrode of battery each in series battery, carries out voltage measurement and balanced management by this input/output terminal to corresponding battery.
Background technology
Rechargeable battery, as lithium battery, lead-acid battery etc., when series connection uses in groups, needs the electricity monitoring each cell voltage and each battery of balanced management.For the battery pack of a large amount of series connection, generally adopt application-specific integrated circuit (ASIC) or with flying each cell voltage of capacitance measurement, adopt conductive discharge form to carry out passive balanced management to battery electric quantity in charging process.Although application-specific integrated circuit (ASIC) is easy to use, cost compare is high.Traditional switch flying capacitance measurement method and need speed higher, also there is the shortcoming that cost is higher in easy loss of accuracy.And passive equilibrium to there is euqalizing current little, heat management difficulty, easily reduces the shortcomings such as battery cycle life.
Summary of the invention
In order to overcome, the precision that in existing measurement battery pack, each cell voltage circuit exists is low, high in cost of production shortcoming, to there is euqalizing current little with overcoming passive equilibrium, heat management difficulty, the shortcomings such as easy reduction battery cycle life, the invention provides a kind of novel solid switching network circuit, the positive and negative electrode of battery each in series battery is drawn out on the input/output terminal of this switching network circuit by this circuit, carries out voltage measurement and balanced management by this input/output terminal to corresponding battery.
The technical solution adopted for the present invention to solve the technical problems: if series-connected cell joint number is even number, battery Cell 1, Cell 2, Cell 3cell 2n-2, Cell 2n-1, Cell 2nbe connected into battery pack successively, the positive pole of battery pack is Cell 2npositive pole, the negative pole of battery pack is Cell 1negative pole, Cell 1, Cell 3cell 2n-1positive pole connect N-type field effect transistor T respectively l1, T l3t l2n-1drain electrode, T l1, T l3t l2n-1source electrode connect N-type field effect transistor T respectively r1, T r3t r2n-1source electrode, Cell 2cell 2n-2, Cell 2npositive pole connect N-type field effect transistor T respectively l2t l2n-2, T l2ndrain electrode, T l2t l2n-2, T l2nsource electrode connect N-type field effect transistor T respectively r2t r2n-2, T r2nsource electrode, Cell 1negative pole and N-type field effect transistor T l0drain electrode connect, T l0source electrode connect N-type field effect transistor T r0source electrode, T r1, T r3t r2n-1drain electrode be connected, and connect N-type field effect transistor T o0drain electrode and N-type field effect transistor T o1source electrode, T r0, T r2t r2n-2, T r2ndrain electrode be connected, and connect N-type field effect transistor T e0drain electrode and N-type field effect transistor T e1source electrode, T o0source electrode connect T e0source electrode form negative sense input/output terminal I/O-, T o1drain electrode connect T e1drain electrode form forward input/output terminal I/O+, if series-connected cell joint number is odd number, battery Cell 1, Cell 2, Cell 3cell 2n-1, Cell 2n, Cell 2n+1be connected into battery pack successively, the positive pole of battery pack is Cell 2n+1positive pole, the negative pole of battery pack is Cell 1negative pole, Cell 1, Cell 3cell 2n-1, Cell 2n+1positive pole connect N-type field effect transistor T respectively l1, T l3t l2n-1, T l2n+1drain electrode, T l1, T l3t l2n-1, T l2n+1source electrode connect N-type field effect transistor T respectively r1, T r3t r2n-1, T r2n+1source electrode, Cell 2cell 2npositive pole connect N-type field effect transistor T respectively l2t l2ndrain electrode, T l2t l2nsource electrode connect N-type field effect transistor T respectively r2t r2nsource electrode, Cell 1negative pole and N-type field effect transistor T l0drain electrode connect, T l0source electrode connect N-type field effect transistor T r0source electrode, T r1, T r3t r2n-1, T r2n+1drain electrode be connected, and connect N-type field effect transistor T o0drain electrode and N-type field effect transistor T o1source electrode, T r0, T r2t r2ndrain electrode be connected, and connect N-type field effect transistor T e0drain electrode and N-type field effect transistor T e1source electrode, T o0source electrode connect T e0source electrode form negative sense input/output terminal I/O-, T o1drain electrode connect T e1drain electrode form forward input/output terminal I/O+, wherein n represents random natural number.
The invention has the beneficial effects as follows that circuit structure is simple, measure error is little, can provide higher euqalizing current.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 and Fig. 2 is schematic diagram of the present invention.
In Fig. 1 and Fig. 2, Cell 1, Cell 2, Cell 3cell 2n-2, Cell 2n-1, Cell 2n, Cell 2n+1be battery, they are composed in series battery pack as shown in the figure successively.T l0, T r0, T l1, T r1, T l2, T r2, T l3, T r3t l2n-2, T r2n-2, T l2n-1, T r2n-1, T l2n, T r2n, T l2n+1, T r2n+1, T e0, T e1, T o0, T o1it is N-type field effect transistor.G l0, G r0, G l1, G r1, G l2, G r2, G l3, G r3g l2n-2, G r2n-2, G l2n-1, G r2n-1, G l2n, G r2n, G l2n+1, G r2n+1, G e0, G e1, G o0, G o1t respectively l0, T r0, T l1, T r1, T l2, T r2, T l3, T r3t l2n-2, T r2n-2, T l2n-1, T r2n-1, T l2n, T r2n, T l2n+1, T r2n+1, T e0, T e1, T o0, T o1grid.I/O+ is forward input/output terminal, and I/O-is negative sense input/output terminal.Represented by dotted arrows abridged battery, N-type field effect transistor and connecting line thereof in figure.
Embodiment
Fig. 1 display be when connect in battery pack even number batteries time working method.In Fig. 1, battery Cell in series battery 1, Cell 3cell 2n-1positive pole connect N-type field effect transistor T respectively l1, T l3t l2n-1drain electrode, T l1, T l3t l2n-1source electrode connect N-type field effect transistor T respectively r1, T r3t r2n-1source electrode, battery Cell 2cell 2n-2, Cell 2npositive pole connect N-type field effect transistor T respectively l2t l2n-2, T l2ndrain electrode, T l2t l2n-2, T l2nsource electrode connect N-type field effect transistor T respectively r2t r2n-2, T r2nsource electrode, battery Cell 1negative pole and N-type field effect transistor T l0drain electrode connect, T l0source electrode connect N-type field effect transistor T r0source electrode, T r1, T r3t r2n-1drain electrode be connected, and connect N-type field effect transistor T o0drain electrode and N-type field effect transistor T o1source electrode, T r0, T r2t r2n-2, T r2ndrain electrode be connected, and connect N-type field effect transistor T e0drain electrode and N-type field effect transistor T e1source electrode, T o0source electrode connect T e0source electrode form negative sense input/output terminal I/O-, T o1drain electrode connect T e1drain electrode form forward input/output terminal I/O+, wherein n represents random natural number, represented by dotted arrows abridged battery, N-type field effect transistor and connecting line thereof in figure.
Measure or balancing battery Cell 1time, at G l1, G r1, G l0, G r0, G o1, G e0on add logical one signal, N-type field effect transistor T l0, T r0, T l1, T r1, T o1, T e0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 1positive pole short circuit, I/O-and Cell 1negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 1voltage or to Cell 1carry out charge and discharge balanced management.
Measure or balancing battery Cell 2time, at G l2, G r2, G l1, G r1, G e1, G o0on add logical one signal, N-type field effect transistor T l2, T r2, T l1, T r1, T e1, T o0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 2positive pole short circuit, I/O-and Cell 2negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 2voltage or to Cell 2carry out charge and discharge balanced management.
Measure or balancing battery Cell 3time, at G l3, G r3, G l2, G r2, G o1, G e0on add logical one signal, N-type field effect transistor T l3, T r3, T l2, T r2, T o1, T e0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 3positive pole short circuit, I/O-and Cell 3negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 3voltage or to Cell 3carry out charge and discharge balanced management.
Measure or balancing battery Cell 2n-1time, at G l2n-1, G r2n-1, G l2n-2, G r2n-2, G o1, G e0on add logical one signal, N-type field effect transistor T l2n-1, T r2n-1, T l2n-2, T r2n-2, T o1, T e0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 2n-1positive pole short circuit, I/O-and Cell 2n-1negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 2n-1voltage or to Cell 2n-1carry out charge and discharge balanced management.
Measure or balancing battery Cell 2ntime, at G l2n, G r2n, G l2n-1, G r2n-1, G e1, G o0on add logical one signal, N-type field effect transistor T l2n, T r2n, T l2n-1, T r2n-1, T e1, T o0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 2npositive pole short circuit, I/O-and Cell 2nnegative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 2nvoltage or to Cell 2ncarry out charge and discharge balanced management.
For being connected on Cell 3and Cell 2n-1between the measurement of battery or balanced way, can according to battery Cell 2n-1and Cell 2ncarry out measuring or the mode of equilibrium is analogized.
Fig. 2 display be when connect in battery pack odd number batteries time working method.In Fig. 2, battery Cell in series battery 1, Cell 3cell 2n-1, Cell 2n+1positive pole connect N-type field effect transistor T respectively l1, T l3t l2n-1, T l2n+1drain electrode, T l1, T l3t l2n-1, T l2n+1source electrode connect N-type field effect transistor T respectively r1, T r3t r2n-1, T r2n+1source electrode, battery Cell 2cell 2npositive pole connect N-type field effect transistor T respectively l2t l2ndrain electrode, T l2t l2nsource electrode connect N-type field effect transistor T respectively r2t r2nsource electrode, battery Cell 1negative pole and N-type field effect transistor T l0drain electrode connect, T l0source electrode connect N-type field effect transistor T r0source electrode, T r1, T r3t r2n-1, T r2n+1drain electrode be connected, and connect N-type field effect transistor T o0drain electrode and N-type field effect transistor T o1source electrode, T r0, T r2t r2ndrain electrode be connected, and connect N-type field effect transistor T e0drain electrode and N-type field effect transistor T e1source electrode, T o0source electrode connect T e0source electrode form negative sense input/output terminal I/O-, T o1drain electrode connect T e1drain electrode form forward input/output terminal I/O+, wherein n represents random natural number, represented by dotted arrows abridged battery, N-type field effect transistor and connecting line thereof in figure.
Measure or balancing battery Cell 1time, at G l1, G r1, G l0, G r0, G o1, G e0on add logical one signal, N-type field effect transistor T l0, T r0, T l1, T r1, T o1, T e0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 1positive pole short circuit, I/O-and Cell 1negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 1voltage or to Cell 1carry out charge and discharge balanced management.
Measure or balancing battery Cell 2time, at G l2, G r2, G l1, G r1, G e1, G o0on add logical one signal, N-type field effect transistor T l2, T r2, T l1, T r1, T e1, T o0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 2positive pole short circuit, I/O-and Cell 2negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 2voltage or to Cell 2carry out charge and discharge balanced management.
Measure or balancing battery Cell 3time, at G l3, G r3, G l2, G r2, G o1, G e0on add logical one signal, N-type field effect transistor T l3, T r3, T l2, T r2, T o1, T e0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 3positive pole short circuit, I/O-and Cell 3negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 3voltage or to Cell 3carry out charge and discharge balanced management.
Measure or balancing battery Cell 2ntime, at G l2n, G r2n, G l2n-1, G r2n-1, G e1, G o0on add logical one signal, N-type field effect transistor T l2n, T r2n, T l2n-1, T r2n-1, T e1, T o0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 2npositive pole short circuit, I/O-and Cell 2nnegative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 2nvoltage or to Cell 2ncarry out charge and discharge balanced management.
Measure or balancing battery Cell 2n+1time, at G l2n+1, G r2n+1, G l2n, G r2n, G o1, G e0on add logical one signal, N-type field effect transistor T l2n+1, T r2n+1, T l2n, T r2n, T o1, T e0conducting, other N-type field effect transistor keeps off state, because the internal resistance of N-type field effect transistor is lower, can be similar to and think I/O+ and Cell 2n+1positive pole short circuit, I/O-and Cell 2n+1negative pole short circuit, therefore, can by I/O+ and I/O-two ends Measurement accuracy Cell 2n+1voltage or to Cell 2n+1carry out charge and discharge balanced management.
For being connected on Cell 3and Cell 2nbetween the measurement of battery or balanced way, can according to battery Cell 2nand Cell 2n+1carry out measuring or the mode of equilibrium is analogized.

Claims (1)

1. adopt a switching network circuit for solid switch, it is characterized in that: if series-connected cell joint number is even number, battery Cell 1, Cell 2, Cell 3cell 2n-2, Cell 2n-1, Cell 2nbe connected into battery pack successively, the positive pole of battery pack is Cell 2npositive pole, the negative pole of battery pack is Cell 1negative pole, Cell 1, Cell 3cell 2n-1positive pole connect N-type field effect transistor T respectively l1, T l3t l2n-1drain electrode, T l1, T l3t l2n-1source electrode connect N-type field effect transistor T respectively r1, T r3t r2n-1source electrode, Cell 2cell 2n-2, Cell 2npositive pole connect N-type field effect transistor T respectively l2t l2n-2, T l2ndrain electrode, T l2t l2n-2, T l2nsource electrode connect N-type field effect transistor T respectively r2t r2n-2, T r2nsource electrode, Cell 1negative pole and N-type field effect transistor T l0drain electrode connect, T l0source electrode connect N-type field effect transistor T r0source electrode, T r1, T r3t r2n-1drain electrode be connected, and connect N-type field effect transistor T o0drain electrode and N-type field effect transistor T o1source electrode, T r0, T r2t r2n-2, T r2ndrain electrode be connected, and connect N-type field effect transistor T e0drain electrode and N-type field effect transistor T e1source electrode, T o0source electrode connect T e0source electrode form negative sense input/output terminal I/O-, T o1drain electrode connect T e1drain electrode form forward input/output terminal I/O+, if series-connected cell joint number is odd number, battery Cell 1, Cell 2, Cell 3cell 2n-1, Cell 2n, Cell 2n+1be connected into battery pack successively, the positive pole of battery pack is Cell 2n+1positive pole, the negative pole of battery pack is Cell 1negative pole, Cell 1, Cell 3cell 2n-1, Cell 2n+1positive pole connect N-type field effect transistor T respectively l1, T l3t l2n-1, T l2n+1drain electrode, T l1, T l3t l2n-1, T l2n+1source electrode connect N-type field effect transistor T respectively r1, T r3t r2n-1, T r2n+1source electrode, Cell 2cell 2npositive pole connect N-type field effect transistor T respectively l2t l2ndrain electrode, T l2t l2nsource electrode connect N-type field effect transistor T respectively r2t r2nsource electrode, Cell 1negative pole and N-type field effect transistor T l0drain electrode connect, T l0source electrode connect N-type field effect transistor T r0source electrode, T r1, T r3t r2n-1, T r2n+1drain electrode be connected, and connect N-type field effect transistor T o0drain electrode and N-type field effect transistor T o1source electrode, T r0, T r2t r2ndrain electrode be connected, and connect N-type field effect transistor T e0drain electrode and N-type field effect transistor T e1source electrode, T o0source electrode connect T r0source electrode form negative sense input/output terminal I/O-, T o1drain electrode connect T e1drain electrode form forward input/output terminal I/O+, wherein n represents random natural number.
CN201310311310.0A 2013-07-24 2013-07-24 Switch network circuit with solid switch Pending CN104467774A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111123119A (en) * 2018-10-15 2020-05-08 盐城市惠众新能源科技有限公司 Battery measuring circuit

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US20100052656A1 (en) * 2008-09-03 2010-03-04 Texas Instruments Incorporated Voltage sensing device
WO2012144373A1 (en) * 2011-04-21 2012-10-26 ルネサスエレクトロニクス株式会社 Switch circuit, selection circuit, and voltage measurement device
CN103078155A (en) * 2011-09-28 2013-05-01 三洋电机株式会社 Power source apparatus and vehicle equipped with the power source apparatus
CN203368430U (en) * 2013-07-24 2013-12-25 赵恩海 Novel solid-state switch network circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050206386A1 (en) * 2004-03-22 2005-09-22 Yazaki Corporation Switching circuit and individual voltmeter apparatus
US20100052656A1 (en) * 2008-09-03 2010-03-04 Texas Instruments Incorporated Voltage sensing device
WO2012144373A1 (en) * 2011-04-21 2012-10-26 ルネサスエレクトロニクス株式会社 Switch circuit, selection circuit, and voltage measurement device
CN103078155A (en) * 2011-09-28 2013-05-01 三洋电机株式会社 Power source apparatus and vehicle equipped with the power source apparatus
CN203368430U (en) * 2013-07-24 2013-12-25 赵恩海 Novel solid-state switch network circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111123119A (en) * 2018-10-15 2020-05-08 盐城市惠众新能源科技有限公司 Battery measuring circuit

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