CN104467457A - 一种高压晶闸管换流阀阀塔 - Google Patents

一种高压晶闸管换流阀阀塔 Download PDF

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CN104467457A
CN104467457A CN201410510452.4A CN201410510452A CN104467457A CN 104467457 A CN104467457 A CN 104467457A CN 201410510452 A CN201410510452 A CN 201410510452A CN 104467457 A CN104467457 A CN 104467457A
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valve
cooling water
tower
module
valve module
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欧阳文敏
张升
査鲲鹏
蓝元良
栾洪洲
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State Grid Corp of China SGCC
Electric Power Research Institute of State Grid Shandong Electric Power Co Ltd
China EPRI Electric Power Engineering Co Ltd
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State Grid Corp of China SGCC
Electric Power Research Institute of State Grid Shandong Electric Power Co Ltd
China EPRI Electric Power Engineering Co Ltd
Smart Grid Research Institute of SGCC
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Priority to CN201410510452.4A priority Critical patent/CN104467457A/zh
Publication of CN104467457A publication Critical patent/CN104467457A/zh
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Rectifiers (AREA)

Abstract

本发明提供的一种高压晶闸管换流阀阀塔,包括二重阀、直母排、斜母排、屏蔽罩和阀避雷器,所述二重阀包括两个单阀,所述单阀通过斜母排和直母排进行串联连接,每个单阀由5个阀模块构成,所述二重阀的层阀至少三个或三个以上奇数层,所述屏蔽罩位于所述二重阀的顶部和底部,所述阀塔包括两个转接母线,所述转接母线由所述屏蔽罩进行支撑;采用这样的结构使得所述阀塔的高、低压出线通过所述转接母线与所述避雷器连接,将高、低压出线转换到与交流进线同侧,很巧妙地解决了阀避雷器接线繁琐的问题,同时操作简单方便,并且将阀塔的母排设置为螺旋上升结构,接线清晰,安装方便。

Description

一种高压晶闸管换流阀阀塔
技术领域
本发明涉及一种换流阀阀塔,具体涉及一种高压晶闸管换流阀阀塔。
背景技术
换流阀是高压直流输电系统中的核心设备,而晶闸管则是换流阀的核心器件,每个晶闸管都需要独立的触发系统控制。高压换流阀包括多个串联的晶闸管,一个换流站的晶闸管数量可能达到数百甚至上千,监控触发单元的数量自然也不少。目前的监控触发单元广泛采用光电触发与监控系统。
每个换流阀塔由多层阀模块组成,每层阀模块包含着几个、甚至数十个晶闸管,通常,与其相配的晶闸管监控触发单元,一般用支架固定通用的电路板,将其布置在晶闸管近旁。
特高压直流输电晶闸管换流阀六脉动及十二脉动换流器广泛采用将两个单阀上下堆积在一起形成一个阀塔的二重阀阀塔结构。
晶闸管换流阀主要特点是根据电压等级的不同而串联不同数目的晶闸管,单阀的电气设计主要考虑串联晶闸管个数。单阀通常由基本阀模块组成,而基本阀模块则由晶闸管压装机构及饱和电抗器等元器件组成。单阀由基本阀模块串联而成,而串联的形式可以多样,其中一种方式是基本阀模块在同一水平面上左右放置,单阀由多层这种结构组成,单阀电气上及结构上都表现为螺旋式上升结构。
这种螺旋式上升结构接线清晰,仅需直母排及斜母排完成一次布线,但是存在缺陷:当二重阀阀层数设计为奇数时,会带来交流进线及直流出线在异侧的问题,这给阀避雷器接线带来了麻烦;
因此需要提供一种适用高压晶闸管换流阀阀塔,使得二重阀阀层数设计为奇数时能满足交流进线与直流出线的接线需求。
发明内容
针对现有技术的不足,本发明提供一种高压晶闸管换流阀阀塔,所述阀塔包括二重阀、直母排、斜母排、屏蔽罩和避雷器,所述二重阀包括两个单阀,所述单阀通过斜母排和直母排进行串联连接,每个单阀由5个阀模块构成,所述阀模块由阀组件构成,所述阀组件为晶闸管,所述晶闸管为具有四层或四层以上交错P、N层的半导体装置,且在与作为阴极的N型半导体层接触的P型半导体层中相对于该作为阴极的N型半导体层的区域具有第一开口,所述二重阀的层阀至少三个或三个以上奇数层,所述屏蔽罩位于所述二重阀的顶部和底部,其特征在于,所述阀塔包括两个转接母线,所述转接母线由所述屏蔽罩进行支撑,所述阀塔的高、低压出线通过所述转接母线与所述避雷器连接。。
优选地,所述二重阀由五个阀层组成,每个阀层由两个阀模块组成,中间层的左边的阀模块属于上面的单阀的阀模块,右边的阀模块属于下面的单阀的阀模块。
优选地,所述斜母排和所述直母排设置为螺旋上升结构。
优选地,所述的晶闸管换流阀阀塔还包括用于冷却所述阀模块的水冷系统,所述的水冷系统包括冷却水主管道和冷却水分管道,所述的冷却水主管道由上至下环绕设置于对应的所述阀模块的外侧,所述的冷却水主管道的朝向冷却水主管道环内侧方向上设置有用于将冷却水导向对所述阀模块的冷却水分管道,所述的冷却水主管道与对应的阀模块之间有间隙。
本发明的有益效果为:
本发明提供的一种高压晶闸管换流阀阀塔,组成单阀的阀模块个数为奇数时,交流相从阀塔一侧中间层接入,阀塔的直流高、低压出线均分别通过一个转接母线与避雷器连接,将高、低压出线转换到与交流进线同侧,很巧妙地解决了阀避雷器接线繁琐的问题,同时操作简单方便,并且将阀塔的母排设置为螺旋上升结构,接线清晰,安装方便。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细说明:
图1为本发明高压晶闸管换流阀阀塔的正视图;
图2为本发明高压晶闸管换流阀阀塔的正视图;
图3为本发明高压晶闸管换流阀阀塔的俯视图。
其中:1-屏蔽罩2-阀模块3-斜母排4-直母排5-避雷器6-转接母线
结合图1、图2和图3,图1为本发明为本发明高压晶闸管换流阀阀塔的正视图;图2为本发明高压晶闸管换流阀阀塔的正视图;图3为本发明高压晶闸管换流阀阀塔的俯视图。图中的高压晶闸管换流阀阀塔包括二重阀、直母排4、斜母排3、屏蔽罩1和避雷器5,二重阀包括两个单阀,所述单阀通过斜母排3和直母排4进行串联连接,所述斜母排3和所述直母排4设置为螺旋上升结构,每个单阀由三个或三个以上的奇数的阀模块2构成,所述阀模块2由阀组件构成,所述阀组件为晶闸管,所述晶闸管为具有四层或四层以上交错P、N层的半导体装置,且在与阴极的N型半导体层接触的P型半导体层中,相对于该阴极的N型半导体层的区域具有第一开口,所述二重阀的层阀至少三层或三以上的奇数层,所述屏蔽罩1分别位于所述二重阀的顶部和底部,图中的二重阀由五个阀层组成,每个阀层由两个阀模块2组成,中间层的左边的阀模块2属于上面的单阀的阀模块,右边的阀模块2属于下面的单阀的阀模块,所述阀塔包括两个转接母线6,所述转接母线6由所述屏蔽罩1进行支撑,所述阀塔的高、低压出线通过所述转接母线6与所述避雷器1连接。
通过在屏蔽罩1的向二重阀的一面分别设置转接母线6,在组成单阀的阀模块为技术时,巧妙的将上下单阀的的直流进线侧与交流出线侧转移到同一侧,这样转接母线6直接与避雷器5进线连接,解决了进出线异侧带来的接线繁琐的问题。
另外,直母线4和斜母线3采用了螺旋上升式结构,使得阀塔的接线清晰方便,简单美观。
为了能够即使的对阀模块进行散热,晶闸管换流阀阀塔还设置了用于冷却阀模块2的水冷系统,水冷系统包括冷却水主管道和冷却水分管道,冷却水主管道由上至下环绕设置于对应的所述阀模块2的外侧,冷却水主管道的朝向冷却水主管道环内侧方向上设置有用于将冷却水导向对阀模块2的冷却水分管道,所述的冷却水主管道与对应的阀模块2之间有间隙。
最后应当说明的是:以上实施例仅用以说明本发明的技术方案而非对其限制,尽管参照上述实施例对本发明进行了详细的说明,所属领域的普通技术人员依然可以对本发明的具体实施方式进行修改或者等同替换,这些未脱离本发明精神和范围的任何修改或者等同替换,均在申请待批的权利要求保护范围之内。

Claims (4)

1.一种高压晶闸管换流阀阀塔,所述阀塔包括二重阀、直母排(4)、斜母排(3)、屏蔽罩(1)和避雷器(5),所述二重阀包括两个单阀,所述单阀用斜母排(3)和直母排(4)串联,每个单阀由5个阀模块(2)构成,所述阀模块(2)由阀组件构成,所述阀组件为晶闸管,所述晶闸管为具有四层或四层以上交错P、N层的半导体装置,且在与作为阴极的N型半导体层接触的P型半导体层中相对于该作为阴极的N型半导体层的区域具有第一开口,所述二重阀的层阀至少三个或三个以上奇数层,所述屏蔽罩(1)位于所述二重阀的顶部和底部,其特征在于,所述阀塔包括两个转接母线(6),所述转接母线(6)由所述屏蔽罩(1)进行支撑,所述阀塔的高、低压出线通过所述转接母线(6)与所述避雷器(1)连接。
2.根据权利要求1所述的高压晶闸管换流阀阀塔,其特征在于,所述二重阀由五个阀层组成,每个阀层由两个阀模块(2)组成,中间层的左边的阀模块(2)属于上面的单阀的阀模块,右边的阀模块(2)属于下面的单阀的阀模块。
3.根据权利要求1所述的高压晶闸管换流阀阀塔,其特征在于,所述斜母排(3)和所述直母排(4)设置为螺旋上升结构。
4.根据权利要求1所述的高压晶闸管换流阀阀塔,其特征在于,所述的晶闸管换流阀阀塔包括用于冷却所述阀模块(2)的水冷系统,所述的水冷系统包括冷却水主管道和冷却水分管道,所述的冷却水主管道由上至下环绕设置于对应的所述阀模块(2)的外侧,所述的冷却水主管道的朝向冷却水主管道环内侧方向上设置有用于将冷却水导向对所述阀模块(2)的冷却水分管道,所述的冷却水主管道与对应的阀模块(2)之间有间隙。
CN201410510452.4A 2014-09-28 2014-09-28 一种高压晶闸管换流阀阀塔 Pending CN104467457A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110535354A (zh) * 2018-05-25 2019-12-03 全球能源互联网研究院有限公司 一种紧凑型智能化换流阀

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090257212A1 (en) * 2006-08-09 2009-10-15 Honda Motor Co., Semiconductor device
CN102169859A (zh) * 2011-03-21 2011-08-31 许继集团有限公司 一种用于高压直流输电的晶闸管换流阀阀塔
CN103594490A (zh) * 2012-08-13 2014-02-19 无锡维赛半导体有限公司 晶闸管及晶闸管封装件
CN104009651A (zh) * 2014-05-30 2014-08-27 许继电气股份有限公司 换流阀阀塔及使用该换流阀阀塔的阀厅

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090257212A1 (en) * 2006-08-09 2009-10-15 Honda Motor Co., Semiconductor device
CN102169859A (zh) * 2011-03-21 2011-08-31 许继集团有限公司 一种用于高压直流输电的晶闸管换流阀阀塔
CN103594490A (zh) * 2012-08-13 2014-02-19 无锡维赛半导体有限公司 晶闸管及晶闸管封装件
CN104009651A (zh) * 2014-05-30 2014-08-27 许继电气股份有限公司 换流阀阀塔及使用该换流阀阀塔的阀厅

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
廖敏等: "±660kV直流输电工程换流阀结构设计", 《电力建设》 *
李健生等: "葛上±500kV直流输电系统技术特性及其调试", 《华中电力》 *
郭焕: "直流输电换流阀杂散电容和冲击电压分布的计算", 《中国电机工程学报》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110535354A (zh) * 2018-05-25 2019-12-03 全球能源互联网研究院有限公司 一种紧凑型智能化换流阀
CN110535354B (zh) * 2018-05-25 2020-07-24 全球能源互联网研究院有限公司 一种紧凑型智能化换流阀

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