CN104465869A - Method for manufacturing silicon solar cell - Google Patents
Method for manufacturing silicon solar cell Download PDFInfo
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- CN104465869A CN104465869A CN201410673493.5A CN201410673493A CN104465869A CN 104465869 A CN104465869 A CN 104465869A CN 201410673493 A CN201410673493 A CN 201410673493A CN 104465869 A CN104465869 A CN 104465869A
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- China
- Prior art keywords
- solar cell
- silicon solar
- electrode
- manufacture method
- copper powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002131 composite material Substances 0.000 claims abstract description 18
- 238000007650 screen-printing Methods 0.000 claims abstract description 13
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 12
- 238000009766 low-temperature sintering Methods 0.000 claims abstract description 7
- 229910000807 Ga alloy Inorganic materials 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000004570 mortar (masonry) Substances 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000007772 electrode material Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a method for manufacturing a silicon solar cell. The method comprises the following steps: 1, preparing composite paste, wherein solid copper powder is mixed in a liquid indium-gallium alloy, and the composite paste is obtained after even mixing; 2, preparing a selective emitter, wherein laser grooving is carried out on the front electrode area of a silicon wafer; 3, carrying out silk-screen printing on a front electrode, wherein the composite paste obtained in the step 1 is printed in the grooved area through the high-precision silk-screen printing technology; 4, carrying out low temperature sintering; 5, forming a cathode electrode on a substrate layer, wherein a metal nano-particle layer is formed on at least one face of a cathode electrode layer, and a work function value of metal nano-particles in the metal nano-particle layer is lower than that of the cathode electrode layer. A low-melting-point mixture of the indium-gallium alloy and the copper powder is adopted in the method for manufacturing the silicon solar cell to serve as electrode materials, and the cost is greatly reduced while the high conduction and low electrical resistivity of the existing electrode material-copper are maintained.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of manufacture method of silicon solar cell.
Background technology
Crystal silicon solar energy battery is a kind of semiconductor device luminous energy being directly changed into electric energy.For whole crystal silicon solar energy battery device, the embodiment of stuctures and properties all needs to realize through electrode sample data, therefore, in crystal silicon solar energy battery manufacture craft, when after formation PN junction, the front electrode that the photoelectric current of collection is derived can be one of step of key in this technique by preparation, and the uniformity of front electrode and conduction have a significant impact the performance of product and rate of finished products.
The preparation method of crystal silicon solar energy battery front electrode can be divided into plating, sputtering and silk screen printing.Electrode quality prepared by electro-plating method is high, but the method cost is high, and it is slow to prepare speed, and the method may use some poisonous and hazardous materials in electroplating process in addition, there is certain safety and health hidden danger.Electrode quality prepared by sputtering method is also higher, but identical with electro-plating method, the cost of the method is also higher, and it is slow to prepare speed.Compare with sputtering method with plating, although method for printing screen has equipment simply, easy to operate, with low cost, safety non-toxic, easily forms electrode, and can obtain good metal and the ohmic contact of semiconductor, and advantage in apparent good order and condition.Therefore, current industrial quarters many employings method for printing screen prepares the front electrode of crystal silicon solar energy battery.
Silk-screen printing technique is solidified by specific metal material under the high temperature conditions, to form the ohmic contact of metal semiconductor.For the front electrode of crystal silicon solar energy battery, existing silk-screen printing technique scrapes with glue scraping article to smear printing electrode slurry, makes it through Stainless Steel screen mesh to silicon chip surface, then forms electrode by sintering.At present, in silk-screen printing technique, the general silver slurry that adopts is as the front electrode slurry of crystal silicon solar energy battery, and sintering temperature is generally between 850 DEG C ~ 900 DEG C.There is following shortcoming in this technique: (1) silver is as noble metal, and it is expensive, and the consumption of front electrode material is very large, therefore, adopts this technique to prepare the cost of crystal silicon solar energy battery front electrode very high; (2) sintering temperature in this technique is higher, there is easy damaged silicon chip, causes product angularity comparatively large, and the problem such as energy consumption is high.
Summary of the invention
The object of the invention is for the deficiencies in the prior art, provide a kind of manufacture method of silicon solar cell, it is low that the method has cost, can form the advantage of electrode by low temperature.
The present invention realizes the technical scheme that above-mentioned technical purpose adopts: a kind of manufacture method of silicon solar cell, is characterized in that: comprise the following steps:
Step 1, prepare composite mortar: hybrid solid-state copper powder in liquid indium gallium alloy, obtains composite mortar after stirring;
Step 2, prepare selective emitter: carry out lbg at front side of silicon wafer electrode zone;
Step 3, silk screen printing front electrode: the composite mortar obtained at slot area print steps 1 with high accurate silk-screen printing technique;
Step 4, low-temperature sintering: sinter at temperature is 300 DEG C ~ 400 DEG C, form front electrode.
Step 5, form backplate: described back electrode layer at least one side is formed with metal nano-particle layer, and in described metal nano-particle layer, the work function value of metal nanoparticle is lower than the work function value of negative electrode layer.
In above-mentioned composite mortar, the mass percentage of copper is preferably 60% ~ 90%.
In above-mentioned composite mortar, the purity of copper powder is preferably 99.99%.
In above-mentioned composite mortar, the particle diameter of copper powder is preferably 2 microns ~ 20 microns.
In above-mentioned steps 1, whipping temp is preferably 160 DEG C ~ 220 DEG C, and mixing time is preferably 30 minutes ~ 300 minutes.
In above-mentioned steps 2, laser power is preferably 10W ~ 20W.
The manufacture method of a kind of silicon solar cell of the present invention adopts the mixture of low melting point indium gallium alloy and copper powder as composite mortar, carry out lbg at front side of silicon wafer electrode zone and prepare selectivity emission electrode, then with high accurate silk-screen printing technique, composite mortar is printed on slot area, finally at temperature is 300 ~ 400 DEG C, carry out low-temperature sintering, form front electrode.Compared with prior art, manufacture method of the present invention adopts the mixture of low melting point indium gallium alloy and copper powder as electrode material, while the high conduction keeping existing electrode material-copper to have and low-resistivity, greatly reduces cost; Meanwhile, form front electrode by low-temperature sintering, overcome exist in prior art easy damaged silicon chip, cause product angularity comparatively large, and the problem such as energy consumption is high.In addition, in order to solve the ohmic contact problem of indium gallium copper alloy and semiconductor, manufacture method laser of the present invention carries out laser grooving at needs printing zone, forms selective emitter, can form ohmic contact under cryogenic after the composite mortar solidification of copper powder mixing indium gallium with semiconductor.Therefore, manufacture method of the present invention can be improved the quality of products, and reduces manufacturing cost, has important industrialization prospect in crystal silicon solar energy battery field.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the lbg region of silicon chip surface in the embodiment of the present invention 1.
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Embodiment 1:
Step 1, prepare indium gallium copper slurry:
In the homothermal operations area of 160 DEG C, in indium gallium liquid alloy, add particle diameter is 2 microns ~ 20 microns, and purity is the copper powder particle of 99.99% and stirs the thick slurry of formation, and according to mass percent, in whole mixture, the content of copper powder is 60%;
Step 2, prepare selective emitter:
At silicon chip surface, by the region shown in Fig. 1, laser grooving is carried out to silicon chip, obtained selective emitter;
Step 3, silk screen printing front electrode:
Silicon chip after having been prepared by selective emitter is put into HF solution and is removed phosphorosilicate glass layer, then takes out silicon chip, at the temperature of 180 DEG C, is precisely printed on by composite mortar on the laser grooving region shown in Fig. 1;
Step 4, low-temperature sintering:
Silicon chip is put into sintering furnace, carries out Fast Sintering under nitrogen protection, sintering temperature is 300 DEG C, sintering time is 8 seconds, and then silicon chip extracting is naturally cooled to room temperature, namely silicon chip surface obtains front electrode.
Embodiment 2:
Step 1, prepare indium gallium copper slurry:
In the homothermal operations area of 220 DEG C, in indium gallium liquid alloy, add the copper powder particle that particle diameter is 2 microns ~ 20 microns, purity is 99.99% also stir the thick slurry of formation, according to mass percent, in whole mixture, the content of copper powder is 80%;
Step 2, prepare selective emitter:
At silicon chip surface, by the region shown in Fig. 1, laser grooving is carried out to silicon chip, obtained selective emitter;
Step 3, silk screen printing front electrode:
Silicon chip after having been prepared by selective emitter is put into HF solution and is removed phosphorosilicate glass layer, then takes out silicon chip, at the temperature of 180 DEG C, is precisely printed on by composite mortar on the laser grooving region shown in Fig. 1;
Step 4, low-temperature sintering:
Silicon chip is put into sintering furnace, carries out Fast Sintering under nitrogen protection, sintering temperature is 400 DEG C, sintering time is 8 seconds, and then silicon chip extracting is naturally cooled to room temperature, namely silicon chip surface obtains front electrode.
Step 5, backplate are formed:
Form backplate, described back electrode layer at least one side is formed with metal nano-particle layer, and in described metal nano-particle layer, the work function value of metal nanoparticle is lower than the work function value of negative electrode layer.
Claims (5)
1. a manufacture method for silicon solar cell, is characterized in that: comprise the following steps:
Step 1, prepare composite mortar: hybrid solid-state copper powder in liquid indium gallium alloy, obtains composite mortar after stirring;
Step 2, prepare selective emitter: carry out lbg at front side of silicon wafer electrode zone;
Step 3, silk screen printing front electrode: the composite mortar obtained at slot area print steps 1 with high accurate silk-screen printing technique;
Step 4, low-temperature sintering: sinter at temperature is 300 ~ 400 DEG C, form front electrode;
Step 5, form cathode electrode on the base layer, described negative electrode layer at least one side is formed with metal nano-particle layer, and in described metal nano-particle layer, the work function value of metal nanoparticle is lower than the work function value of negative electrode layer.
2. the manufacture method of silicon solar cell according to claim 1, is characterized in that: in described composite mortar, and the mass percentage of copper powder is 60% ~ 90%.
3. the manufacture method of silicon solar cell according to claim 1 and 2, is characterized in that: the particle diameter of described copper powder is 2 microns ~ 20 microns.
4. the manufacture method of silicon solar cell according to claim 1 and 2, is characterized in that: in described step 1, and whipping temp is 160 DEG C ~ 220 DEG C, and mixing time is 30 minutes ~ 300 minutes.
5. the manufacture method of silicon solar cell according to claim 1 and 2, is characterized in that: in described step 2, and laser power is 10W ~ 20W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410673493.5A CN104465869A (en) | 2014-11-21 | 2014-11-21 | Method for manufacturing silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410673493.5A CN104465869A (en) | 2014-11-21 | 2014-11-21 | Method for manufacturing silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104465869A true CN104465869A (en) | 2015-03-25 |
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ID=52911601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410673493.5A Pending CN104465869A (en) | 2014-11-21 | 2014-11-21 | Method for manufacturing silicon solar cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN104465869A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039099A (en) * | 2017-03-10 | 2017-08-11 | 宜兴市昱元能源装备技术开发有限公司 | A kind of Novel conductive paste and the method that solar battery sheet main gate line is prepared with it |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011090300A2 (en) * | 2010-01-19 | 2011-07-28 | 한양대학교 산학협력단 | Tandem organic/inorganic hybrid solar cell containing various types of nanoparticles, and method for manufacturing same |
| CN102185020A (en) * | 2011-03-29 | 2011-09-14 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method for front electrode of crystalline silicon solar battery |
| CN102315389A (en) * | 2010-07-08 | 2012-01-11 | 海洋王照明科技股份有限公司 | Single-layer organic solar cell and making method thereof |
-
2014
- 2014-11-21 CN CN201410673493.5A patent/CN104465869A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011090300A2 (en) * | 2010-01-19 | 2011-07-28 | 한양대학교 산학협력단 | Tandem organic/inorganic hybrid solar cell containing various types of nanoparticles, and method for manufacturing same |
| CN102315389A (en) * | 2010-07-08 | 2012-01-11 | 海洋王照明科技股份有限公司 | Single-layer organic solar cell and making method thereof |
| CN102185020A (en) * | 2011-03-29 | 2011-09-14 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method for front electrode of crystalline silicon solar battery |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039099A (en) * | 2017-03-10 | 2017-08-11 | 宜兴市昱元能源装备技术开发有限公司 | A kind of Novel conductive paste and the method that solar battery sheet main gate line is prepared with it |
| CN107039099B (en) * | 2017-03-10 | 2019-09-27 | 宜兴市昱元能源装备技术开发有限公司 | A kind of Novel conductive paste and the method for preparing solar battery sheet main gate line with it |
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Application publication date: 20150325 |