CN104465478A - Processing method of electrostatic chuck - Google Patents
Processing method of electrostatic chuck Download PDFInfo
- Publication number
- CN104465478A CN104465478A CN201410797148.2A CN201410797148A CN104465478A CN 104465478 A CN104465478 A CN 104465478A CN 201410797148 A CN201410797148 A CN 201410797148A CN 104465478 A CN104465478 A CN 104465478A
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- CN
- China
- Prior art keywords
- sintering
- electrostatic chuck
- insulating barrier
- processing method
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a processing method of an electrostatic chuck, which generates a pattern on a dielectric layer by a fluid containing electrode metal in a physical mode. Then placing the mixture in a vacuum roasting furnace for primary sintering. The sintering process is carried out by paying attention to the process curve of temperature rise and temperature drop. After the primary sintering is finished, the insulating layer and the ceramic powder are placed in a vacuum furnace together for secondary sintering. The sintering process also takes care of the sintering process curve. Compared with the traditional processing technology, the processing technology of the electrostatic chuck greatly improves the bonding strength, because the ceramic sintering technology is developed in China and the existence of bubbles is greatly reduced, the rejection rate is reduced, the ceramic sintering technology is developed well, and the process is easy to control.
Description
Technical field
The present invention relates to ceramic post sintering and Electrostatic Absorption field, particularly a kind of processing method of electrostatic chuck.
Background technology
Ion implantor is implantation equipment important in semiconductor technology, along with the requirement of technic index is more and more higher, also more and more higher with requirement to its function.In traditional implanter, the clamping of wafer mainly adopts the method for mechanical grip, and these metal clamping devices sputter metal ion under the bombardment of ion beam, metallic pollution is caused to wafer, reduce the qualification rate of wafer, and the damage of equipment may be caused, thus cause heavy losses.For this reason, increasing semiconductor researcher gradually by focus in Electrostatic Absorption, thus realize mechanical holding chip device.The integrated technique of the core process mainly electrostatic chuck of electrostatic chuck processing.
In the processing technology of current electrostatic chuck, electrode layer generates first on the dielectric layer, then the dielectric layer and insulating barrier that generate electrode layer is bonded.Current bonding mode mainly contains two kinds: (i) thermal plastic insulation is bonding.This bonding way requires that insulating heat-conductive adhesiveness is lower, and curing time is longer, bonding complete after need to be placed on vacuum and to go down bubble removing.This kind of technique for sticking is simple to operate, and the process-cycle is shorter.But percent defective is high, bubble is between the two layers squeezed, causes spark phenomenon down in working order.(ii) teflon coatings is bonding.This bonding way is clipped between dielectric layer and insulating barrier by one deck Teflon film, is then placed in vacuum furnace and sinters.This kind of more difficult control of sintering processing technique, processing cost is higher.In sintering process, Teflon film has pyrocondensation to split phenomenon, causes dielectric layer and insulating barrier not to bond completely.
Summary of the invention
Technical problem to be solved by this invention is, not enough for prior art, provides a kind of processing method of electrostatic chuck, overcomes bondingly in current electrostatic chuck machining process to there is the defective workmanship that percent defective is high, adhesive strength is lower.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of processing method of electrostatic chuck, is characterized in that, comprises the following steps:
1) at thickness be 3mm insulating barrier a face on adopt physical vapour deposition (PVD) formed thickness be the electrode layer of 10um;
2) by above-mentioned steps 1) process after insulating barrier once sintered in a vacuum furnace, sintering temperature is 580 DEG C, insulation 4h;
3) be double sintering in a vacuum furnace after the dielectric layer of 100um aligns with the insulating barrier after once sintered completing by thickness, sintering temperature is 770 DEG C, insulation 6h, and is placed in by electrode layer between dielectric layer (2) and insulating barrier;
4) insulating barrier after double sintering is bonded by heat-conducting glue and cooling base;
5) form in dielectric layer surface the protective layer that a layer thickness is 1-3um by cold spraying.
Compared with prior art, the beneficial effect that the present invention has is: roasting is incorporated in the processing technology of electrostatic chuck by the present invention.This kind of processing technology is different from two kinds of processing technologys of current electrostatic chuck: it is by the mode on the dielectric layer pattern generation of the fluid containing electrode metal by physics.Then place it in vacuum baking stove once sintered.In sintering process, 1h is at the uniform velocity warming up to 580 DEG C, and insulation 4h, then 1h is at the uniform velocity cooled to room temperature with furnace temperature.Complete once sintered after, itself and insulating barrier are combined and are placed in vacuum furnace double sintering.In sintering process, 1h is at the uniform velocity warming up to 770 DEG C, and insulation 6h, then 1h is at the uniform velocity cooled to room temperature with furnace temperature.The processing technology of this electrostatic chuck substantially increases its bonding strength compared with traditional processing technology, because ceramic sintering process is very ripe in the development of China, the existence of bubble reduces greatly, so percent defective reduces, and ceramic sintering process is full-fledged, process easily controls.
Accompanying drawing explanation
Fig. 1 is electrostatic chuck critical component of the present invention arrangement schematic diagram;
Fig. 2 is the integrated schematic diagram of electrostatic chuck of the present invention.
Embodiment
As shown in Figure 1, one of them plane of dielectric layer 2 adopts physical vapour deposition (PVD) form the figuratum metal level of one deck band, this layer of metal level is called as electrode layer 3(and adopts noble metal, as silvery is done).The dielectric layer 2(that will form electrode layer 3 adopts high-purity pottery, as aluminium nitride makes) be seated in and carry out once sintered in vacuum sintering furnace, make electrode layer 3 and dielectric layer 2 reach interatomic combination.After having sintered, itself and insulating barrier 4(is made to adopt high-purity pottery, as aluminium nitride makes) complete matching puts together, and electrode layer 3 is between dielectric layer 2 and insulating barrier 4.Then same being placed in vacuum sintering furnace carries out double sintering, makes to reach interatomic combination equally between electrode layer 3 with insulating barrier 4.In above-mentioned once sintered and double sintering process, strictly must control sintering temperature sintering process curve in time.After sintering process completes, the product of sintering is connected with cooling base 6.First cooling base 6(is adopted metal, as aluminum is done) surface on smear heat-conducting glue 5 uniformly, then product sinter is fitted towards complete to align with cooling base 6 of the one side of insulating barrier 4.Completely after laminating, cooling base 6 adds uniform pressure, and is placed in vacuum atmosphere rapidly, taken out after heat-conducting glue solidifies completely.After taking-up, its method by cold spraying is generated on the surface of dielectric layer 2 layer protective layer 1(and adopts silicon dioxide to make), be then positioned in vacuum sintering furnace and sintered, make it cover completely on the surface of dielectric layer 2.Taken out from vacuum furnace by product after having sintered, the processing technology of electrostatic chuck completes.
Claims (5)
1. a processing method for electrostatic chuck, is characterized in that, comprises the following steps:
1) on a face of insulating barrier (4), adopt physical vapour deposition (PVD) to form electrode layer (3);
2) by above-mentioned steps 1) process after insulating barrier (4) once sintered in a vacuum furnace, sintering temperature is 580 DEG C, insulation 4h;
3) double sintering in a vacuum furnace after dielectric layer (2) being alignd with the insulating barrier (4) after once sintered completing, sintering temperature is 770 DEG C, insulation 6h, and is placed between dielectric layer (2) and insulating barrier (4) by electrode layer (3);
4) insulating barrier (4) after double sintering is bonded by heat-conducting glue (5) and cooling base (6);
5) layer protective layer (1) is formed by cold spraying on dielectric layer (2) surface.
2. the processing method of electrostatic chuck according to claim 1, is characterized in that, described insulating barrier (4) thickness is 3mm.
3. the processing method of electrostatic chuck according to claim 2, is characterized in that, described electrode layer (3) thickness is 10um.
4. the processing method of electrostatic chuck according to claim 3, is characterized in that, described dielectric layer (2) thickness is 100um.
5. the processing method of electrostatic chuck according to claim 4, is characterized in that, described protective layer (1) thickness is 1 ~ 3um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410797148.2A CN104465478B (en) | 2014-12-22 | 2014-12-22 | Processing method of electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410797148.2A CN104465478B (en) | 2014-12-22 | 2014-12-22 | Processing method of electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104465478A true CN104465478A (en) | 2015-03-25 |
| CN104465478B CN104465478B (en) | 2017-01-25 |
Family
ID=52911322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410797148.2A Active CN104465478B (en) | 2014-12-22 | 2014-12-22 | Processing method of electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465478B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845613A (en) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Electrostatic chuck and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5560780A (en) * | 1993-04-22 | 1996-10-01 | Applied Materials, Inc. | Protective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming same |
| CN1409871A (en) * | 1999-12-09 | 2003-04-09 | 圣戈本陶瓷及塑料股份有限公司 | Electrostatic chuck with flat film electrode |
| CN1988128A (en) * | 2005-12-22 | 2007-06-27 | 日本碍子株式会社 | Electrostatic chuck |
| CN101110383A (en) * | 2006-07-19 | 2008-01-23 | 日本碍子株式会社 | Electrostatic chuck with heater |
| CN101477962A (en) * | 2008-01-03 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chuck apparatus having connection layer and manufacturing process thereof |
| CN103000370A (en) * | 2012-12-28 | 2013-03-27 | 白金 | Electrostatic energy storage device and preparation method thereof |
-
2014
- 2014-12-22 CN CN201410797148.2A patent/CN104465478B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5560780A (en) * | 1993-04-22 | 1996-10-01 | Applied Materials, Inc. | Protective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming same |
| CN1409871A (en) * | 1999-12-09 | 2003-04-09 | 圣戈本陶瓷及塑料股份有限公司 | Electrostatic chuck with flat film electrode |
| CN1988128A (en) * | 2005-12-22 | 2007-06-27 | 日本碍子株式会社 | Electrostatic chuck |
| CN101110383A (en) * | 2006-07-19 | 2008-01-23 | 日本碍子株式会社 | Electrostatic chuck with heater |
| CN101477962A (en) * | 2008-01-03 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chuck apparatus having connection layer and manufacturing process thereof |
| CN103000370A (en) * | 2012-12-28 | 2013-03-27 | 白金 | Electrostatic energy storage device and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845613A (en) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Electrostatic chuck and manufacturing method thereof |
| CN105845613B (en) * | 2015-01-16 | 2019-03-22 | 中芯国际集成电路制造(上海)有限公司 | A kind of electrostatic chuck and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104465478B (en) | 2017-01-25 |
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Effective date of registration: 20220429 Address after: 101111 1st floor, building 1, 6 Xingguang 2nd Street, Tongzhou District, Beijing Patentee after: Beijing Scintillation Section Zhongkexin Electronic Equipment Co.,Ltd. Address before: 101100 No. 6, Xingguang Second Street, optical electromechanical integration industrial base, Tongzhou District, Beijing Patentee before: BEIJING ZHONGKEXIN ELECTRONICS EQUIPMENT Co.,Ltd. |
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| TR01 | Transfer of patent right |