CN104465428A - Copper-copper metal thermal pressing bonding method - Google Patents
Copper-copper metal thermal pressing bonding method Download PDFInfo
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- CN104465428A CN104465428A CN201310423177.8A CN201310423177A CN104465428A CN 104465428 A CN104465428 A CN 104465428A CN 201310423177 A CN201310423177 A CN 201310423177A CN 104465428 A CN104465428 A CN 104465428A
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- 238000000034 method Methods 0.000 title claims abstract description 78
- 239000002184 metal Substances 0.000 title claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 53
- 238000003825 pressing Methods 0.000 title claims abstract description 36
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 101
- 229910004353 Ti-Cu Inorganic materials 0.000 claims abstract description 84
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 83
- 239000000956 alloy Substances 0.000 claims abstract description 83
- 229910052802 copper Inorganic materials 0.000 claims abstract description 75
- 238000002161 passivation Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000137 annealing Methods 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 28
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L21/603—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/03011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides a copper-copper metal thermal pressing bonding method. The method at least comprises the following steps: first of all, providing a first wafer to be bonded and a second wafer to be bonded, wherein the first water comprises a first substrate, a first passivation layer and a first Ti-Cu alloy film, and the second wafer comprises a second substrate, a second passivation layer and a second Ti-Cu alloy film; then, performgin thermal pressing bonding on the surface of the first Ti-Cu alloy film of the first wafer and the surface of the second Ti-Cu alloy film of the second wafer; and finally, performing annealing processing in a protective gas to enable Ti atoms in the first Ti-Cu alloy film to diffuse towards the surface of the first passivation layer and Ti atoms in the second Ti-Cu alloy film to diffuse towards the surface of the second passivation layer so as to finally form Ti adhesive/barrier layers on the surfaces of the first passivation layer and the second passivation layer, and Cu atoms diffusing towards a bonding surface so as to realize bonding. According to the method provided by the invention, before the bonding, what is needed is only to respectively perform co-sputtering on the two substrates for once, such that the sputtering frequency is reduced by half, the process is relatively simple, the reliability is good, the technical cost is quite low, and finally, the Ti adhesive/barrier layer are formed through diffusion after the annealing processing, and the copper bonding effect is better.
Description
Technical field
The invention belongs to field of semiconductor devices, relate to the bonding of disk in three-dimension packaging field, particularly relate to the method for a kind of copper-copper metal heat pressing bonding.
Background technology
Along with chip size reduces and the raising of integrated level, traditional two-dimentional integrated technology runs into the development bottleneck being difficult to overcome.Compared with two-dimentional integrated technology, three-dimensional integration technology can realize chip multifunction, improves chip integration, reduces signal lag, reduces power consumption.Three-dimensional integration technology generally can be divided into transistor stack, die-level bonding, tube core-wafer bonding, wafer scale bonding, wherein wafer scale bonding is optimal way of realization, can be used for heterojunction integrated, cost low yield is high, and the interconnection between each layer chip is realized by silicon through hole (TSV).
Wafer bonding refers to and under the help of outside energy, makes the atomic reaction at wafer bonding interface formation covalent bond and be combined into one, and reaches the micro-processing technology of certain bond strength.Conventional bonding techniques has oxide Direct Bonding, metal-metal bonding and viscose glue bonding.
As shown in Figure 1, traditional copper-copper direct bonded metal closes processing step:
First, provide the first pending substrate 101 ' and the second substrate 201 ', at upper formation first passivation layer 102 ' of described first substrate 101 ', at upper formation second passivation layer 202 ' of the second substrate 201 ';
Then, described first passivation layer 102 ' sputters a Ti adhesion/barrier 104 ' and a Cu metal level 105 ' successively, described second passivation layer 202 ' sputters the 2nd Ti adhesion/barrier 204 ' and the 2nd Cu metal level 205 ' successively;
Finally, the surface of the first substrate 101 ' containing a Cu metal level 105 ' is carried out contacting bonding with the surface of the second substrate 201 ' containing the 2nd Cu metal level 205 '.Be illustrated in figure 2 the structural representation before bonding.
From above-mentioned steps, traditional copper-copper direct bonded metal closes technique to be needed respectively to be bonded two substrate sputtering adhesion/barrier and copper, and carry out bonding afterwards, sputtering number of times is more, and technique is comparatively complicated.
For this reason, the present invention proposes the method for a kind of new copper-copper metal heat pressing bonding, at substrate surface cosputtering Ti-Cu metallic film, carries out once extra annealing after bonding, and in annealing process, Ti can gather to substrate direction and finally form adhesion/barrier.Method bonding effect of the present invention is good, and technique is simple, and reliability is good.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide the method for a kind of copper-copper metal heat pressing bonding, for solve sputtering in prior art before bonding often, the problem of complex process.
For achieving the above object and other relevant objects, the invention provides the method for a kind of copper-copper metal heat pressing bonding, the method for described copper-copper metal heat pressing bonding at least comprises the following steps:
1) provide the first disk to be bonded and the second disk, described first disk comprises the first substrate, be produced on the first passivation layer of described first substrate surface and be produced on a Ti-Cu alloy firm of described first passivation layer surface; Described second disk comprises the second substrate, be produced on the second passivation layer of described second substrate surface and be produced on the 2nd Ti-Cu alloy firm of described second passivation layer surface;
2) described first disk and the second disk are carried out thermocompression bonding, the surface contact that the first disk contains the surface of a Ti-Cu alloy firm and the second disk contains the 2nd Ti-Cu alloy firm forms bonding face;
3) in protective gas, carry out annealing in process, make that the Ti atom in a Ti-Cu alloy firm diffuses to form a Ti adhesion/barrier to the first passivation layer surface, Cu atom spreads to bonding face; Ti atom in 2nd Ti-Cu alloy firm diffuses to form the 2nd Ti adhesion/barrier to the second passivation layer surface, Cu atom spreads to bonding face; Form common Cu metal level after Cu atoms permeating in Cu atom in one Ti-Cu alloy firm and the 2nd Ti-Cu alloy-film, finally realize bonding.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, a described Ti-Cu alloy firm and the 2nd Ti-Cu alloy firm all adopt cosputtering technique to make.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, described cosputtering technique is carried out in many targets cavity, and target is Ti and Cu, and operating pressure during sputtering is less than 10
-2holder, the sputter rate of Cu is 5 ~ 8 times of the sputter rate of Ti.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, the thickness making the described Ti-Cu alloy firm formed is 0.2 ~ 10 μm, and the thickness of described 2nd Ti-Cu alloy firm is 0.2 ~ 10 μm.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, step 2) in carry out thermocompression bonding before also comprise acetic acid cleaning carried out and the step dried to a described Ti-Cu alloy firm and the 2nd Ti-Cu alloy firm surface.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, the temperature of carrying out thermocompression bonding is 350 ~ 450 DEG C, and the time is 30 ~ 40 minutes, and pressure is 2000 ~ 4000N.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, at N
2carry out annealing in process in atmosphere, the temperature range of annealing in process is 350 ~ 450 DEG C, and the time range of annealing is 60 ~ 100 minutes.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, respectively the first substrate and the second substrate surface were cleaned before making first passivation layer and the second passivation layer in described step 1).
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, described first passivation layer is silicon dioxide, silicon nitride, PI or BCB, and the thickness of described first passivation layer is 0.2 ~ 5 μm; Described second passivation layer is silicon dioxide, silicon nitride, PI or BCB, and the thickness of described second passivation layer is 0.2 ~ 5 μm.
As a kind of preferred version of the method for copper of the present invention-copper metal heat pressing bonding, described first passivation layer and the second passivation layer adopt thermal oxidation, chemical vapour deposition (CVD) or spin coating proceeding to make.
As mentioned above, the method of copper of the present invention-copper metal heat pressing bonding, there is following beneficial effect: first prepare a Ti-Cu alloy firm and the 2nd Ti-Cu alloy firm respectively on two substrates, again a Ti-Cu alloy firm and the 2nd Ti-Cu alloy firm are carried out bonding, experience an annealing process afterwards just Ti with Cu to be separated, wherein, Ti moves to substrate terminal and forms stable adhesion/barrier, and copper is to the diffusion of bond contact face, finally obtain good bonding effect.Method of the present invention only needs to carry out a cosputtering respectively to two substrates before bonding, and sputtering number of times decreases half, and technique is comparatively simple, good reliability, and process costs is lower, and the copper bonding effect diffuseed to form by annealing in process is also better.
Accompanying drawing explanation
Fig. 1 is the method flow schematic diagram of the copper-copper metal bonding of prior art.
Fig. 2 is that prior art adopts the method for copper-copper metal bonding to carry out the wafer architecture schematic diagram of bonding.
Fig. 3 is the method flow schematic diagram of copper of the present invention-copper metal heat pressing bonding.
Fig. 4 ~ Fig. 5 is the method step 1 of copper of the present invention-copper metal heat pressing bonding) in the structural representation that presents.
Fig. 6 is that the method for copper of the present invention-copper metal heat pressing bonding carry out step 2) structural representation before bonding.
Fig. 7 is that the method for copper of the present invention-copper metal heat pressing bonding carry out step 2) structural representation in bonding.
Fig. 8 is the structural representation after the method for copper of the present invention-copper metal heat pressing bonding carries out step 3) annealing.
Element numbers explanation
S1 ~ S3 step
1 first disk
101,101 ' first substrate
102,102 ' first passivation layer
103 the one Ti-Cu alloy firms
104,104 ' the one Ti adhesion/barrier
105 Cu metal levels
105 ' the one Cu metal level
2 second disks
201,201 ' second substrate
202,202 ' second passivation layer
203 the 2nd Ti-Cu alloy firms
204,204 ' the 2nd Ti adhesion/barrier
205 ' the 2nd Cu metal level
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The invention provides the method for a kind of copper-copper thermocompression bonding, as shown in Figure 3, the method for described copper-copper thermocompression bonding at least comprises the following steps:
First step S1 is performed, as shown in Figure 4 and Figure 5, first disk 1 and the second disk 2 to be bonded is provided, described first disk 1 comprises the first substrate 101, be produced on first passivation layer 102 on described first substrate 101 surface and be produced on the Ti-Cu alloy firm 103 on described first passivation layer 102 surface; Described second disk 2 comprises the second substrate 201, be produced on second passivation layer 202 on described second substrate 201 surface and be produced on the 2nd Ti-Cu alloy firm 203 on described second passivation layer 202 surface.
Described first substrate 101, second substrate 201 can be silicon substrate or SOI, certainly, also can be the substrate that other are applicable to.In the present embodiment, described first substrate 101 and the second substrate 201 are silicon substrate.Peripheral circuit and plane storage organization etc. can also be comprised in described first substrate 101 and the second substrate 201, not limit at this.
The diameter of described first substrate 101 and the second substrate 201 includes but not limited to 4 cun, 8 cun etc.In the present embodiment, provide the silicon chip of two panels 4 cun as the first pending substrate 101 and the second substrate 201.
Before the making carrying out the first passivation layer 102 and the second passivation layer 202, need to clean the first substrate 101 and the second substrate 201 surface, general adopt acetone ultrasonic+the standard cleaning technique cleaning of EtOH Sonicate+RC1+RC2.Particularly, first adopt acetone and alcoholic solution, under ul-trasonic irradiation, each cleaning substrate 3 ~ 5 minutes, uses RC1(NH afterwards
4oH:H
2o
2: H
2and RC2(HCl:H O)
2o
2: H
2o) clean 15 minutes respectively.
Thermal oxidation, chemical vapor deposition (CVD) or spin coating proceeding is adopted to make described first passivation layer 102 and the second passivation layer 202.In the present embodiment, the plasma reinforced chemical vapour deposition technique (PECVD) in chemical vapor deposition method is all adopted to make described first passivation layer 102 and the second passivation layer 202.The material making the first passivation layer 102 and the second passivation layer 202 formed can be inorganic material class, such as, silicon dioxide or silicon nitride etc. also can be organic-based material, such as, PI(polyimides, Polyimide, is abbreviated as PI) or BCB(benzocyclobutene) etc., certainly, also can be the material that other are applicable to.In the present embodiment; described first passivation layer 102 and the second passivation layer 202 are silicon dioxide; for the protective layer as silicon substrate, prevent the metal of subsequent deposition from spreading to silicon substrate, the structures such as the peripheral circuit in silicon substrate or silicon substrate can also be prevented to be corroded in follow-up cleaning.In order to make described first passivation layer 102 and the second passivation layer 202 play a protective role to greatest extent, the thickness of described first passivation layer 102 and the second passivation layer 202 can be produced within the scope of 0.2 ~ 5 μm.In the present embodiment, the thickness of described first passivation layer 102 and the second passivation layer 202 is 1 μm.
Adopt cosputtering or electroplating technology to make a described Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy firm 203, certainly, other applicable techniques also can be adopted to complete preparation.In the present embodiment, what all adopt is that cosputtering technique makes a Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy firm 203, and technique is simple and the quality of alloy firm is high.Cosputtering technique is carried out in many targets cavity, first carries out the preparation of a Ti-Cu alloy firm 103, then carries out the preparation of the 2nd Ti-Cu alloy firm 203.The target adopted is respectively Ti and Cu, and two kinds of target material are splashed to the first passivation layer 102 surface simultaneously and form a Ti-Cu alloy firm 103.The preparation of the 2nd Ti-Cu alloy firm 203 is also adopted in the same way.In preparation process, operating pressure is less than 10
-2holder, the sputter rate of Cu is 5 ~ 8 times of the sputter rate of Ti.The thickness that sputtering time sputters needed for sputtering power and alloy firm is determined, and in general, if sputtering power is less, sputtering time is longer, otherwise then anti-; If the thickness of the required sputtering of alloy firm is less, sputtering time is shorter, otherwise then anti-.As a kind of scheme that the present invention optimizes, the thickness range of the described Ti-Cu alloy firm 103 that preparation is formed and the 2nd Ti-Cu alloy firm 203 is 0.2 ~ 10 μm, sputtering power during cosputtering is 150 ~ 200 watts, and the time range of required sputtering is 60 ~ 100 minutes.The thickness of a described Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy firm 203 also can suitably adjust as required.
Exemplarily, operating pressure during cosputtering is 5 × 10
-3holder, the sputter rate of Cu and Ti is respectively 0.08nm/s and 0.01nm/s, and sputtering power is 160 watts, and sputtering time is 90 minutes, and a described Ti-Cu alloy firm 103 of formation and the thickness of the 2nd Ti-Cu alloy firm 203 are respectively 9 μm.
Then step S2 is performed, as shown in Figure 6 and Figure 7, described first disk 1 and the second disk 2 are carried out thermocompression bonding, and the first disk 1 contains surface and the surface contact formation bonding face of the second disk 2 containing the 2nd Ti-Cu alloy firm 203 of a Ti-Cu alloy firm 103.
Need the surface of a described Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy firm 203 surface to carry out cleaning and drying before carrying out thermocompression bonding, the cleaning fluid that cleaning adopts includes but not limited to acetic acid, watery hydrochloric acid or dilute sulfuric acid etc.In the present embodiment, acetic acid is adopted to clean the surface of a described Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy firm 203 surface.
First disk 1 and the second disk 2 are carried out thermocompression bonding, and the structure before bonding is as shown in Figure 6, relative with the 2nd Ti-Cu alloy firm 203 surface by the surface of a Ti-Cu alloy firm 103 to be bonded.Be illustrated in figure 7 the first disk 1 and the second disk 2 in bonding, this structure is placed in the bonding apparatus in 350 ~ 450 DEG C of temperature ranges, and apply along in the direction of arrow as shown in Figure 7 the pressure that size is 2000 ~ 4000N, keep said temperature and the pressure time of about 30 ~ 40 minutes, the bonding structure that acquisition the one Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy firm 203 bonding are integrated.
Exemplarily, the process of thermocompression bonding is: be evacuated to 0.01mbar, and is warming up to 400 DEG C, and the first disk 1 to be bonded and the second disk 2 apply the pressure of 3000N, and bonding time is 30 minutes, is cooled to room temperature afterwards.
Finally perform step S3, in protective gas, carry out annealing in process, the Ti atom in a Ti-Cu alloy firm 103 is spread to bonding face to the first passivation layer 102 diffusion into the surface formation the one Ti adhesion/barrier 104, Cu atom; Ti atom in 2nd Ti-Cu alloy firm 203 forms the 2nd Ti adhesion/barrier 204 to the second passivation layer 202 diffusion into the surface, Cu atom spreads to bonding face; Form common Cu metal level 105 after Cu atoms permeating in Cu atom in one Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy-film 203, finally realize bonding.
The temperature of carrying out annealing process can within the scope of 350 ~ 450 DEG C, and the processing time is within 60 ~ 100 minutes.Exemplarily, annealing temperature is 400 DEG C, and annealing time is 90 minutes.Further, annealing process is at N
2carry out in atmosphere, certainly, also can anneal as protective gas with inert gas or other inactive gass, such as, Ar gas.
After annealing, one Ti-Cu alloy firm 103 can be separated with Ti atom gradually with the Cu atom in the 2nd Ti-Cu alloy-film 203, wherein, in one Ti-Cu alloy firm, the Ti atom of 103 is to the first passivation layer 102 diffusion into the surface, forms a stable Ti adhesion/barrier 104 on the first passivation layer 102 surface; Ti atom in 2nd Ti-Cu alloy 203 film, to the second passivation layer 202 diffusion into the surface, forms the 2nd stable Ti adhesion/barrier 204 on the second passivation layer 202 surface; And the Cu atom in a Ti-Cu alloy firm 103 and the 2nd Ti-Cu alloy firm 203 all spreads to bond contact face, bonding face is formed common Cu metal level 105, first disk 1 and the second disk 2 are firmly bonded together by this Cu metal level 105, as shown in Figure 8.
A Ti adhesion/barrier 104 of formation after thin 103 films of one Ti-Cu alloy and the Ti atom in the 2nd Ti-Cu alloy firm 203 are separated with Cu atom is relevant with the sputter rate of Cu and Ti during sputtering with the thickness of the 2nd Ti adhesion/barrier 204, such as, if the sputter rate of Cu and Ti is respectively 0.08nm/s and 0.01nm/s, the thickness of the Ti-Cu alloy firm 103 formed is 9 μm, after being then separated, the thickness of the one Ti adhesion/barrier 204 is approximately 1 μm, about 8 μm, the Cu layer that one Ti-Cu alloy firm 103 is separated, equally, the thickness of Ti and Cu after the 2nd Ti-Cu alloy firm is separated also can be estimated by which.Certainly, have certain change owing to being separated front and back atomic density, can there is certain deviation in the thickness after separation in allowed band.
Why Ti atom and Cu atom can spread to specific direction, reason is: the diffusion of Ti and Cu is realized by the relative displacement of atom, in crystal lattice, any atom will move to another position from a position must obtain certain activation energy of diffusion, fusing point due to Ti is 1.53 times of Cu, and the atomic binding energy of Ti is also 1.4 times of Cu, and therefore the diffusion activation of Ti is wanted to be far longer than Cu, and the atom sizableness of Cu and Ti, easily spread.In addition, the activation energy of diffusion being positioned at the copper of alloy firm surface (bond contact face) position is less.Therefore, in annealing process after bonding, the trend of Cu oriented bond contact face diffusion, the hole stayed after corresponding copper diffusion can be filled by Ti atom, and macroscopically observing Ti can spread to substrate direction.
In sum, the invention provides the method for a kind of copper-copper metal heat pressing bonding, the method adopts when bonding first prepares a Ti-Cu alloy firm and the 2nd Ti-Cu alloy firm, through going through an annealing process after bonding, just Ti with Cu can be separated, wherein, Ti moves to substrate terminal and forms stable barrier layer/adhesion layer, and copper is to the diffusion of bond contact face, finally obtain good bonding effect.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. a method for copper-copper metal heat pressing bonding, is characterized in that, the method for described copper-copper metal heat pressing bonding at least comprises step:
1) provide the first disk to be bonded and the second disk, described first disk comprises the first substrate, be produced on the first passivation layer of described first substrate surface and be produced on a Ti-Cu alloy firm of described first passivation layer surface; Described second disk comprises the second substrate, be produced on the second passivation layer of described second substrate surface and be produced on the 2nd Ti-Cu alloy firm of described second passivation layer surface;
2) described first disk and the second disk are carried out thermocompression bonding, the surface contact that the first disk contains the surface of a Ti-Cu alloy firm and the second disk contains the 2nd Ti-Cu alloy firm forms bonding face;
3) in protective gas, carry out annealing in process, make that the Ti atom in a Ti-Cu alloy firm diffuses to form a Ti adhesion/barrier to the first passivation layer surface, Cu atom spreads to bonding face; Ti atom in 2nd Ti-Cu alloy firm diffuses to form the 2nd Ti adhesion/barrier to the second passivation layer surface, Cu atom spreads to bonding face; Form common Cu metal level after Cu atoms permeating in Cu atom in one Ti-Cu alloy firm and the 2nd Ti-Cu alloy-film, finally realize bonding.
2. the method for copper according to claim 1-copper metal heat pressing bonding, is characterized in that: a described Ti-Cu alloy firm and the 2nd Ti-Cu alloy firm all adopt cosputtering technique to make.
3. the method for copper according to claim 2-copper metal heat pressing bonding, is characterized in that: described cosputtering technique is carried out in many targets cavity, and target is Ti and Cu, and operating pressure during sputtering is less than 10
-2holder, the sputter rate of Cu is 5 ~ 8 times of the sputter rate of Ti.
4. the method for copper according to claim 1-copper metal heat pressing bonding, is characterized in that: the thickness making the described Ti-Cu alloy firm formed is 0.2 ~ 10 μm, and the thickness of described 2nd Ti-Cu alloy firm is 0.2 ~ 10 μm.
5. the method for copper according to claim 1-copper metal heat pressing bonding, is characterized in that: step 2) in carry out thermocompression bonding before also comprise to a described Ti-Cu alloy firm and the 2nd Ti-Cu alloy firm surface carry out acetic acid cleaning and dry step.
6. the method for copper-copper metal heat pressing bonding according to claim 1 or 5, is characterized in that: the temperature of carrying out thermocompression bonding is 350 ~ 450 DEG C, and the time is 30 ~ 40 minutes, and pressure is 2000 ~ 4000N.
7. the method for copper according to claim 1-copper metal heat pressing bonding, is characterized in that: at N
2carry out annealing in process in atmosphere, the temperature range of annealing in process is 350 ~ 450 DEG C, and the time range of annealing is 60 ~ 100 minutes.
8. the method for copper according to claim 1-copper metal heat pressing bonding, is characterized in that: cleaned the first substrate and the second substrate surface respectively before making first passivation layer and the second passivation layer in described step 1).
9. the method for copper according to claim 1-copper metal heat pressing bonding, is characterized in that: described first passivation layer is silicon dioxide, silicon nitride, PI or BCB, and the thickness of described first passivation layer is 0.2 ~ 5 μm; Described second passivation layer is silicon dioxide, silicon nitride, PI or BCB, and the thickness of described second passivation layer is 0.2 ~ 5 μm.
10. the method for the copper according to any one of claim 1,8 or 9-copper metal heat pressing bonding, is characterized in that: described first passivation layer and the second passivation layer adopt thermal oxidation, chemical vapour deposition (CVD) or spin coating proceeding to make.
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