CN104465355A - Technological method for gate oxide layer - Google Patents
Technological method for gate oxide layer Download PDFInfo
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- CN104465355A CN104465355A CN201410837551.3A CN201410837551A CN104465355A CN 104465355 A CN104465355 A CN 104465355A CN 201410837551 A CN201410837551 A CN 201410837551A CN 104465355 A CN104465355 A CN 104465355A
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- gate oxide
- temperature
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- atmosphere
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Abstract
The invention discloses a technological method for a gate oxide layer. The method comprises the steps that (1) oxygen is led into a furnace tube, and thermal growth of the gate oxide layer is carried out; (2) under the oxygen-bearing atmosphere, first-time annealing is carried out at the temperature being 1050 DEG C; (3) under the nitrogen-bearing atmosphere, second-time annealing is carried out at the temperature being 1050 DEG C. According to the technological method, the technology that step-by-step annealing is carried out under the oxygen-bearing atmosphere and the nitrogen-bearing atmosphere successively is adopted for improving the performance of the gate oxide layer, and leakage current of the device is reduced.
Description
Technical field
The present invention relates to IC manufacturing field, refer to a kind of process of gate oxide especially.
Background technology
Gate oxide, be the extremely important structure division of MOS device, it serves as the dielectric between grid and silicon substrate, and usual dry oxygen thermal oxidation technology is preferred process.Its thickness, uniformity, compactness, integrality etc. have direct impact to the performance of device.
In existing shield grid groove structure (SGT) technique, the formation process of gate oxide roughly comprises: the growth carrying out gate oxide in the atmosphere passing into oxygen and a small amount of steam at the temperature of 850 DEG C, and then pass into the replacing that nitrogen and oxygen carry out furnace gas atmosphere, the annealing process of a short time is carried out again under temperature 1000 DEG C of nitrogen atmospheres, then lower the temperature, unloading piece.
Typical as
the gate oxide of thickness, as shown in Figure 1, under 21V voltage, forward electric leakage is generally 1x10
-7a, reverse leakage is 1x10
-8a.Forward too high meeting of leaking electricity causes the problems such as the power consumption increase of device, and as cell-phone heating amount is large, stand-by time shortens.
Summary of the invention
Technical problem to be solved by this invention is the process providing a kind of gate oxide, improves the problem that the electric leakage of existing gate oxide forward is larger.
For solving the problem, the process of a kind of gate oxide provided by the invention, comprises following step:
The first step, passes into oxygen in boiler tube, carries out the growth of gate oxide heat;
Second step, containing under oxygen atmosphere, carries out first time annealing during temperature 1050 DEG C;
3rd step, under nitrogenous atmosphere, carries out second time annealing during temperature 1050 DEG C;
Further, the temperature of described first step gate oxide heat growth is at 700 ~ 900 DEG C.
Further, after the described first step, before second step, or increase heating step, temperature rises to 1000 ~ 1050 DEG C.
Further, described second step containing oxygen atmosphere, refers to oxygenous, oxonium ion or adopt reaction can generate the atmosphere of oxygen or oxonium ion, and annealing temperature is higher than the temperature of gate oxide heat growth.
Further, the nitrogenous atmosphere of described 3rd step, refers to containing nitrogen, Nitrogen ion or adopt reaction can generate the atmosphere of nitrogen or Nitrogen ion, and annealing temperature is higher than the temperature of gate oxide heat growth.
Further, after described 3rd step, or include cooling step, temperature is down to identical with the temperature of the first step.
The process of gate oxide of the present invention, its annealing steps is divided into two steps, and the first step adopts containing oxygen atmosphere, and second step adopts nitrogenous atmosphere, and annealing temperature is all higher than the temperature of gate oxide heat growth.Improve the characteristic of gate oxide, the forward electric leakage of device can be reduced.
Accompanying drawing explanation
Fig. 1 is the forward and reverse electric leakage schematic diagram of device.
Fig. 2 leaks electricity based on the forward of the device of traditional handicraft and present invention process to contrast schematic diagram respectively.
Fig. 3 contrasts schematic diagram based on the reverse leakage of the device of traditional handicraft and present invention process respectively.
Fig. 4 is present invention process flow chart.
Embodiment
The process of gate oxide of the present invention, comprises following processing step:
The first step, passes into oxygen in boiler tube, at 700 ~ 900 DEG C of temperature, carries out the growth of gate oxide heat;
Second step, containing under oxygen atmosphere, carries out first time annealing during temperature 1050 DEG C;
3rd step, under nitrogenous atmosphere, carries out second time annealing during temperature 1050 DEG C;
Grow with new technology
the gate oxide of thickness is example, adds intensification and cooling step:
The first step, first at the temperature of 800 DEG C, passes into oxygen and carries out growth of gate oxide layer in furnace chamber;
Second step, after oxide layer growth completes, temperature rises to 1000 DEG C, keeps 40 minutes;
3rd step, then temperature rises to 1050 DEG C, keeps 20 minutes;
4th step, under reacting the oxygen-containing gas atmosphere that can generate oxygen or oxonium ion with oxygen, oxonium ion or employing, carries out first time annealing, annealing time 30 minutes during temperature 1050 DEG C;
5th step, under reacting the nitrogenous gas atmosphere that can generate nitrogen or Nitrogen ion with nitrogen, Nitrogen ion or employing, carries out second time annealing during temperature 1050 DEG C; Annealing time 10 minutes;
6th step, cools the temperature to 800 DEG C.
By above-mentioned technique,
gate oxide thickness compare traditional handicraft
gate oxide thickness reduce 13%, and low-voltage leakage is on close level, little 2 orders of magnitude of high pressure electric leakage.When its mechanism is the annealing of first step high temperature oxygen, oxonium ion can through the relatively more loose oxide layer of low-temperature epitaxy, and at high temperature, silicon ion and the oxonium ion of some not fully reactions originally continue to react, and finally obtain finer and close oxide layer.During the annealing of second step high temperature nitrogen, the outstanding bond of Nitrogen ion and oxonium ion or silicon ion is closed, and the electronics that can move freely in final oxide layer, number of cavities to decline several order of magnitude than traditional handicraft, leaks electricity and greatly reduces.
As shown in Figure 2, be adopt present invention process comparatively thin oxide layer
thick oxide layer under device and traditional handicraft
the forward leakage tests curve chart of device, when voltage is higher than 18V, the forward of the device under present invention process still tendency of leaking electricity is steady, and curve smoothing, without large fluctuating, is in 1x10
-9near A, the forward electric leakage of the device under traditional handicraft then sharply increases, and far above electric leakage curve of the present invention, reaches 1x10
-7more than A, high 2 orders of magnitude.Shown in Fig. 3 is the reverse leakage test curve figure of the device adopted under present invention process and traditional handicraft, reverse leakage curve under two kinds of techniques overlaps substantially, therefore can predict when oxidated layer thickness is suitable, the reverse leakage of present invention process device also will obviously reduce.
These are only the preferred embodiments of the present invention, be not intended to limit the present invention.For a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a process for gate oxide, is characterized in that, comprises following steps:
The first step, passes into oxygen in boiler tube, carries out the growth of gate oxide heat;
Second step, containing under oxygen atmosphere, carries out first time annealing during temperature 1050 DEG C;
3rd step, under nitrogenous atmosphere, carries out second time annealing during temperature 1050 DEG C.
2. the process of gate oxide as claimed in claim 1, is characterized in that: the temperature of described first step gate oxide heat growth is at 700 ~ 900 DEG C.
3. the process of gate oxide as claimed in claim 1, is characterized in that: after the described first step, before second step, or increases heating step, and temperature rises to 1000 ~ 1050 DEG C.
4. the process of gate oxide as claimed in claim 1, it is characterized in that: described second step containing oxygen atmosphere, refer to oxygenous, oxonium ion or adopt reaction can generate the atmosphere of oxygen or oxonium ion, and annealing temperature is higher than the temperature of gate oxide heat growth.
5. the process of gate oxide as claimed in claim 1, it is characterized in that: the nitrogenous atmosphere of described 3rd step, refer to containing nitrogen, Nitrogen ion or adopt reaction can generate the atmosphere of nitrogen or Nitrogen ion, and annealing temperature is higher than the temperature of gate oxide heat growth.
6. the process of gate oxide as claimed in claim 1, is characterized in that: after described 3rd step, or include cooling step, temperature is down to identical with the temperature of the first step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410837551.3A CN104465355A (en) | 2014-12-24 | 2014-12-24 | Technological method for gate oxide layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410837551.3A CN104465355A (en) | 2014-12-24 | 2014-12-24 | Technological method for gate oxide layer |
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|---|---|
| CN104465355A true CN104465355A (en) | 2015-03-25 |
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| CN201410837551.3A Pending CN104465355A (en) | 2014-12-24 | 2014-12-24 | Technological method for gate oxide layer |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040175961A1 (en) * | 2002-06-12 | 2004-09-09 | Christopher Olsen | Two-step post nitridation annealing for lower EOT plasma nitrided gate dielectrics |
| CN1953144A (en) * | 2005-10-20 | 2007-04-25 | 联华电子股份有限公司 | Manufacturing method of dielectric layer |
| CN101393861A (en) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Gate dielectric layer forming method |
| CN101620994A (en) * | 2008-06-30 | 2010-01-06 | 中芯国际集成电路制造(北京)有限公司 | Methods for determining the minimum thickness of doped gate dielectric layer, polysilicon layer and laminated top layer |
| CN103972070A (en) * | 2014-04-22 | 2014-08-06 | 上海华力微电子有限公司 | Method for manufacturing gate oxide layer |
-
2014
- 2014-12-24 CN CN201410837551.3A patent/CN104465355A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040175961A1 (en) * | 2002-06-12 | 2004-09-09 | Christopher Olsen | Two-step post nitridation annealing for lower EOT plasma nitrided gate dielectrics |
| CN1953144A (en) * | 2005-10-20 | 2007-04-25 | 联华电子股份有限公司 | Manufacturing method of dielectric layer |
| CN101393861A (en) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Gate dielectric layer forming method |
| CN101620994A (en) * | 2008-06-30 | 2010-01-06 | 中芯国际集成电路制造(北京)有限公司 | Methods for determining the minimum thickness of doped gate dielectric layer, polysilicon layer and laminated top layer |
| CN103972070A (en) * | 2014-04-22 | 2014-08-06 | 上海华力微电子有限公司 | Method for manufacturing gate oxide layer |
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Application publication date: 20150325 |