CN104460379A - Ultraviolet laser bonding device for anisotropic conductive film - Google Patents

Ultraviolet laser bonding device for anisotropic conductive film Download PDF

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Publication number
CN104460379A
CN104460379A CN201410746474.0A CN201410746474A CN104460379A CN 104460379 A CN104460379 A CN 104460379A CN 201410746474 A CN201410746474 A CN 201410746474A CN 104460379 A CN104460379 A CN 104460379A
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China
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laser
acf
ultra
conductive film
anisotropic conductive
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龚火烘
刘呈贵
赵昌后
万贤飞
肖仁亮
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FEISHI'ER INDUSTRY Co Ltd SHENZHEN
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FEISHI'ER INDUSTRY Co Ltd SHENZHEN
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Priority to CN201410746474.0A priority Critical patent/CN104460379A/en
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00Programme-control systems
    • G05B19/02Programme-control systems electric
    • G05B19/04Programme control other than numerical control, i.e. in sequence controllers or logic controllers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)

Abstract

The invention discloses an ultraviolet laser bonding device for an anisotropic conductive film. The ultraviolet laser bonding device comprises an ultraviolet laser source, an optical processor, a vibration mirror, a quartz base, a pressing head, a pressure control device and a program controller. The quartz base is made of ultraviolet optical quartz glass and is of an inverted-U-shaped structure. The pressing head is located above the quartz base. The pressure control device is located on the pressing head and connected with the pressing head. The program controller is connected with the ultraviolet laser source, the optical processor and the vibration mirror. The optical processor is used for processing lasers output by the ultraviolet laser source and outputting rectangular laser beam spots, and the rectangular laser beam spots are totally reflected by the vibration mirror to irradiate and transmit through the quartz base. A heat source device is not needed when the ultraviolet laser bonding device is used for bonding a photo-curing type ACF; when the ultraviolet laser bonding device is used for bonding the photo-curing type ACF, the temperature rising speed is higher, the temperature control is more accurate, the curing time is shortened, and the working efficiency is improved.

Description

A kind of anisotropic conductive film Ultra-Violet Laser nation determines device
Technical field
The invention belongs to microelectronic packaging technology field, the Ultra-Violet Laser nation being specifically related to a kind of anisotropic conductive film (Anisotropic-Conductive-Film:ACF) determines device, this device mainly will be used for COG(Chip-on-Glass, glass-chip), FOG(FPC-on-Glass) and the connection of the microcircuit such as FOF(FPC-on-Film).
Background technology
Along with microminiaturization, the flexibility of electronic product, electronic circuit is more and more intensive, distance between centers of tracks is more and more less, and the plumbous welding technology of traditional tin cannot meet the connection request of above-mentioned components and parts, needs to realize connecting and conducting between microcircuit with anisotropic conductive film (ACF).
ACF is a kind of Z-direction conducting, and the anisotropic conductive film of XY direction insulation, after utilizing ACF to carry out microcircuit connection, upper and lower circuit conducting, conducting resistance is less than 1 Ω usually, insulate between the electrode of left and right, and its insulation impedance reaches 10 8more than Ω, and cohesive strength is large, be usually greater than 5N/cm, the reliability of connection is high.The These characteristics of anisotropic conductive film (ACF) makes it obtain more and more widespread use in microcircuit connection area.
Determine, in the device of technique, have three types in the nation utilizing ACF to carry out microcircuit connection at present.Be determine a device for the hot-pressing bonding of heat curing-type ACF Joining Technology, a kind of is determine device for the photocuring nation of UV light-cured type ACF Joining Technology, and another determines device for the ultrasonic nation of heat curing-type ACF Joining Technology.
In above-mentioned three kinds of devices, it is the ACF microcircuit connection device extensively adopted at present that hot-pressing bonding determines device.This device heat trnasfer approach is: be first the electro-heat equipment of heat energy by converting electric energy, add thermal head, IC, FPC(Flexible Printed Circuit is heated again by the pressure head after heating up, flexible circuit board) etc. upper strata need the microcircuit that connects, finally connect microcircuit by warmed-up upper strata and heat be delivered to ACF layer.This heat pipeline programming rate is slow, usually needs 13s-20s, and temperature controls difficult, and thermal loss is large.
For existing ACF light curring unit, as Chinese patent CN 203760001 U, ACF is carried out microcircuit and connect nation's timing, pressure head is first needed to heat ACF glue to molten condition, photocuring reaction could be carried out better, so need to set up heating arrangement and temperature control equipment in addition, this is just equivalent to adds additional a set of light supply apparatus on the basis that existing hot-pressing bonding determines device.
Device is determined for the ultrasonic nation of existing ACF, as US Patent No. 8287670 B2, although can be rapidly heated in nation's timing, determines in process in nation, cause conducting resistance to increase because ultrasonic vibration easily causes the dislocation of connection microcircuit, even occur continuity failure; Ultrasonic device easily produces noise and contaminated environment.
Summary of the invention
The technical problem to be solved in the present invention is: overcome the defect that existing ACF nation determines device existence, propose a kind of anisotropic conductive film Ultra-Violet Laser nation and determine device, both the nation that can be used for light-cured type ACF is fixed, also can be used for thermohardening type ACF nation fixed, and without the need to increasing heat power supply device, programming rate is faster, and it is more accurate that temperature controls, shorten set time, improve work efficiency.
In order to solve the problems of the technologies described above, the present invention proposes following technical scheme: a kind of anisotropic conductive film Ultra-Violet Laser nation determines device, and it comprises ultra-violet laser source, optical processor, galvanometer, quartz base, pressure head, pressure control device, programming controller;
The material of this quartz base is ultraviolet optics quartz glass, in inverse u shape;
This pressure head is positioned at the top of this quartz base;
This pressure control device is positioned at above this pressure head, and this pressure control device connects this pressure head;
This programming controller is connected respectively with this ultra-violet laser source, optical processor, galvanometer, and this programming controller can control this ultra-violet laser source, optical processor, galvanometer;
Described optical processor processes the laser that ultra-violet laser source exports, Output of laser RECTANGULAR BEAM spot;
Above-mentioned laser RECTANGULAR BEAM spot irradiates through this quartz base by described galvanometer after total reflection.
The further restriction of technique scheme is, the ultraviolet wavelength range of this ultra-violet laser source is at 180nm-400nm; The transmission region 180nm-2500nm of this quartz base, the wavelength coverage 100nm-400nm of ultraviolet light.
The further restriction of technique scheme is, this optical processor processes the laser that ultra-violet laser source exports, and comprising: A, expand, the rounded light beam of source laser bundle, and diameter only has several microns to tens microns, must carry out expanding process, amplifying laser light beam; B, after expanding, shaping is carried out to laser beam, make it rectangular output; C, laser light field homogenising, namely expanding, shaping after make the uniform illumination of laser beam, the energy coincidence of each point on the xsect of the laser RECTANGULAR BEAM spot making it export; Laser RECTANGULAR BEAM spot even intensity after optical processor, in laser RECTANGULAR BEAM spot irradiation area, temperature rise is consistent.
The further restriction of technique scheme is, this galvanometer makes laser RECTANGULAR BEAM spot scan along the length direction of anisotropic conductive film by the motion of galvanometer while being radiated at by laser RECTANGULAR BEAM spot on the anisotropic conductive film that is placed between quartz base and pressure head after total reflection.
The further restriction of technique scheme is, the length of laser RECTANGULAR BEAM spot is greater than width about the 1mm of anisotropic conductive film, and width and the length ratio of laser RECTANGULAR BEAM spot are not less than 1/7.
The further restriction of technique scheme is, this programming controller utilizes program setting and the regulation and control power of ultra-violet laser source and laser irradiation time, utilize program setting control the laser RECTANGULAR BEAM spot that laser treatment device exports length and wide, utilize program setting to control this galvanometer deflection angle and sweep frequency.
Compared with prior art, the present invention has following beneficial effect:
Anisotropic conductive film Ultra-Violet Laser nation of the present invention determines device, and the nation that can be used for light-cured type ACF is fixed, also can be used for thermohardening type ACF nation fixed.
Anisotropic conductive film Ultra-Violet Laser nation of the present invention determines device, utilize laser to pass quartz base and ito glass or ito film direct irradiation at ACF layer, the direct absorbing laser luminous energy of ACF and ACF is rapidly heated to melting or solidify temperature required, programming rate is fast, heat transfer distance is short, and heat-energy losses is little.Again because laser power and irradiation time are easy to control, so temperature precise control.For the nation of light-cured type ACF surely also without the need to setting up heating arrangement in addition.Determine in process in nation, apparatus of the present invention were not both vibrated, and also can not produce noise, and it is good that nation determines quality, and production efficiency is high, environmental friendliness.
Accompanying drawing explanation
Fig. 1 is the structural drawing that anisotropic conductive film of the present invention (ACF) Ultra-Violet Laser nation determines device.
The schematic diagram of the relative position of laser RECTANGULAR BEAM spot and ACF when Fig. 2 is laser scanning ACF.
Fig. 3 is the transmittance spectrum figure of quartz base material.
Fig. 4 is the structural representation that quartz base is down the design of " U " shape.
Temperature rise curve when Fig. 5 is LASER HEAT solidification.
Laser setting power when Fig. 6 is LASER HEAT solidification and time curve.
Embodiment
As shown in Figure 1, the present invention proposes a kind of anisotropic conductive film (ACF) Ultra-Violet Laser nation and determines device, and it comprises ultra-violet laser source 10, optical processor 11, galvanometer 12, quartz base 13, pressure head 17, pressure control device 18, programming controller 20.
This quartz base 13 entirety is in falling " U " shape structure (as shown in Figure 4), and the thickness of this base is d.
The material of this quartz base 13 is ultraviolet optics quartz glass (JGS2), its transmission region 180nm-2500nm, the wavelength coverage 100nm-400nm of ultraviolet light.
This pressure head 17 is positioned at the top of this quartz base 13.
This pressure control device 18 is positioned at above this pressure head 17, and this pressure control device 18 connects this pressure head 17.
In use procedure, between this quartz base 13 and this pressure head 17, be placed with transparent ITO(tin indium oxide from bottom to top successively) glass or ITO(tin indium oxide) film 14, ACF(anisotropic conductive film) 15 and FPC(Flexible Printed Circuit, flexible circuit board) or IC16.
Behind this FPC or IC 16 and ito glass or the good position of ito film 14 electrode pair, pressure control device 18 starts to exert pressure to pressure head 17, then ultra-violet laser source 10 starts to irradiate, laser beam is expanded by optical processor 11, shaping, uniform illumination process, the length of Output of laser RECTANGULAR BEAM spot 19(laser RECTANGULAR BEAM spot 19 must be greater than width about the 1mm of ACF 15, width and the length ratio of laser RECTANGULAR BEAM spot 19 are not less than 1/7), after galvanometer 12 reflects, laser RECTANGULAR BEAM spot 19 is through falling the quartz base 13 of " U " shape and transparent ito glass or ito film 14, then be radiated on ACF 15, laser RECTANGULAR BEAM spot 19 is scanned (as shown in Figure 2) along the length direction of ACF 15, the heating of ACF 15 absorbing laser luminous energy is rapidly heated.Scanning angle is according to the length setting of ACF 15, and sweep limit is more than the length 1mm-2mm of ACF 15, and sweep speed controls at 500mm/s-1000mm/s.
This programming controller 20 is connected respectively with this ultra-violet laser source 10, optical processor 11, galvanometer 12, and this programming controller 20 can control this ultra-violet laser source 10, optical processor 11, galvanometer 12.
During photocuring, make (0.5s) in ACF 15 short time arrive melt temperature, the light curing agent simultaneously in the light-initiated ACF 15 of UV, realize ACF solidification.
During heat curing, ACF 15 is made to be raised to solidification temperature fast, usual time <1.0s.Cause thermal curing agents simultaneously, realize ACF solidification.
Determine in process in above-mentioned nation, when ACF glue is in molten condition, pressure control device 18 is exerted pressure to this pressure head 17 at laser pre-irradiation, when ACF glue is in molten condition, this pressure makes conductive micro-balloons be out of shape between electrode, increase conducting contact area, therefore, after solidification, connecting circuit obtains good conduction up and down.
Described ultra-violet laser source 10 is ultraviolet sources, and this ultraviolet wavelength range is at 180nm-400nm, and this wavelength is chosen and need be determined according to the transparent wavelength range of the initiation wavelength of light curing agent in ACF 15 and quartz base; The power bracket be radiated on ACF 15 is 150mw-10,000mw, is pulse type laser, and power setting and change and irradiation time are controlled by programming controller 20, and on-line continuous is adjustable, output power stability ± 2%.
Described optical processor 11, process the laser that ultra-violet laser source 10 exports, function comprises:
A, to expand.The rounded light beam of source laser bundle, diameter only has several microns to tens microns, must carry out expanding process, amplifying laser light beam;
B, after expanding, shaping is carried out to laser beam, make it rectangular output.The length of rectangle and wide value several millimeters to centimetre magnitude, usually wide and long ratio is not less than 1/7.Owing to expanding difficulty, usual laser RECTANGULAR BEAM spot 19 length is short as far as possible, is greater than width about the 1mm of ACF 15.The length direction of laser RECTANGULAR BEAM spot 19 is perpendicular to the length direction of ACF 15, and laser RECTANGULAR BEAM spot 19 length value should than ACF 15 width numerical value bigger (as shown in Figure 2);
C, laser light field homogenising, the energy coincidence of each point on laser RECTANGULAR BEAM spot 19 xsect making it export.
Described galvanometer 12, its effect is radiated on ACF 15 after total reflection by laser RECTANGULAR BEAM spot 19, and make laser RECTANGULAR BEAM spot 19 along ACF 15 length direction scanning (as shown in Figure 2) by galvanometer 12.Because the length of ACF 15 is less than 200 mm usually, and the sweep velocity of galvanometer 12 is up to 500mm/s-2,000 mm/s, so can think that the irradiated in the longitudinal direction intensity of ACF 15 is basically identical, connect irradiated time order and function substantially equal, therefore ACF 15 is heated evenly, and UV irradiates even too, and photocuring reaction or heat curing reaction are evenly carried out.
Laser RECTANGULAR BEAM spot 19 will reflect, absorbs through during quartz base 13 and transmission phenomenon, and reflection and absorption can cause laser energy to lose.Its energy theorem is: E incident=E reflection+ E absorb+ E transmission, because the permeability of quartz is good, reflected light is few, because of E reflectionthe laser energy loss caused can be ignored.According to Heinrich Burger (lambert) theorem, E transmission=E incidente -α d, α is the absorption constant of quartz glass, and d is the distance of light therethrough, is known by above formula, and the size of d is very large on transmission potential impact, and the less transmission potential of d is larger.In order to reduce the loss of laser in quartz, transmission distance d should be shortened as far as possible, quartz base being processed into down " U " shape, light path be shortened by the distance of base, thus reaches transmitted light energy maximization.Ensure that quartz base 13 has adequate thickness and bears nation's level pressure conjunction time institute's applied pressure, so quartz glass to be manufactured down " U " shape structure again simultaneously.
Described programming controller 20, its function comprises:
A, setting and regulation and control this ultra-violet laser source 10 power and irradiation time;
The length of laser RECTANGULAR BEAM spot 19 that this optical processor 11 of B, setting and control exports and wide;
C, setting and control this galvanometer 12 deflection angle and sweep frequency.
When laser irradiates light-cured type ACF, first be heated to melt temperature 60 DEG C-150 DEG C by instantaneous for ACF, usually 0.5s is no more than, then laser power is reduced to original 1/10-1/5 by programmed control, the heat provided only is used for keeping melt temperature, the light-initiated light curing agent of UV simultaneously, make ACF that curing reaction occur, about 3s-10s curing reaction terminates.After ACF reaches melt temperature, reduce power if inappropriate, can cause persistently overheating, just there will be the too high ACF of the causing overcuring of Yin Wendu and be connected microelectronic component damage.
When laser irradiates thermohardening type ACF, first ACF is heated to melt temperature, usually 0.5s is less than, then this temperature 1s-2s is kept, then continue to be warmed up to solidification temperature, all heating-up times control in 3s, then reduce laser power to original 1/10-1/5 by programmed control, and the heat provided only is used for keeping solidification temperature.Reduce power if inappropriate, can cause persistently overheating, just there will be the too high ACF of the causing overcuring of Yin Wendu and be connected microelectronic component damage.
In the process of above-mentioned photocuring and heat curing, when ACF is in molten condition, ACF has better wetting state to bonding interface, make curing reaction evenly, be conducive to improving cohesive strength.
The adhesive initiating agent of light-cured type ACF is UV initiating agent.The wavelength of initiating agent is corresponding with optical maser wavelength.The melt temperature of ACF adhesive is generally 80 DEG C-130 DEG C, the time of arrival of melt temperature, depends on the melt temperature of polymkeric substance and the power of laser.The melt temperature of adhesive is recorded by DIL-thermal dilatometer; By experiment, the laser power reaching melt temperature and time is measured; And measure post laser irradiation power (maintenance constant temperature) and time (UV irradiation), make the curing degree of ACF reach 80%-85%.
Melt temperature and the solidification temperature of thermohardening type ACF anisotropic conductive are determined by the component of adhesive, correspondingly, are recorded the melt temperature of thermohardening type ACF adhesive by DIL-thermal dilatometer; By experiment, the laser power reaching melt temperature and time is measured; And measure post laser irradiation power (maintenance constant temperature) and time, make the curing degree of ACF reach 80%-85%.
The computing method of laser power: utilize formula H=λ m Δ t, H is that temperature raises the heat needing to absorb, and λ is the specific heat (being recorded by DSC) of ACF, and m is the quality (being recorded by 100,000/balance) of ACF, and Δ t is temperature difference.
In Laser emission in the light path being radiated at ACF, laser energy has energy loss through air and quartz base 13 and transparent ito glass or ito film 14.About loss 20%.H is modified to H '=H/(1-20%).
During laser scanning, length and the width of the length of light beam RECTANGULAR BEAM spot scanning and the numeric ratio ACF of width are large, waste energy, cause power loss.H is modified to H "=H '/(ACF area/irradiated area).
H is modified to H "=H '/(ACF area/irradiated area).
By calculating, laser source power 5W-10W during usual ACF laser curing.
Here be application anisotropic conductive film of the present invention (ACF) Ultra-Violet Laser nation determine device carry out light-cured type ACF be warmed up to melt temperature laser power calculate and set time mensuration example:
ACF weighs, and in order to weigh accurately, gets that 40cm is long, 2mm is wide, the ACF of thickness 25 μm (adopting the Fisher ACF 6010-UV of Shenzhen City Feishier Industry Co., Ltd) weighs, m=0.02031g, show that long this ACF weight of 10cm is about 0.005g.
ACF Specific Heat Measurement: by the ACF precise of certain length and width, this ACF is measured its specific heat in DSC.DSC programming rate is 10 DEG C/min.The specific heat recording above-mentioned Fisher ACF 6010-UV is λ=1.975J/(g DEG C)
ACF melt temperature measures: the melt temperature measuring above-mentioned Fisher ACF 6010-UV through thermal dilatometer DIL402C is 117 DEG C-125 DEG C.To this ACF is elevated to melt temperature 125 DEG C from 25 DEG C of room temperatures, then Δ t=100 DEG C.
This ACF is warmed up to the heat needed for 125 DEG C from 25 DEG C: H=λ m Δ t=1.975 × 0.005 × 100=987.5mJ
Laser is through air, galvanometer 12, quartz glass base 13 and ito glass or ito film 14, and all energy approximately lose 20%, and the thermal value of ultra-violet laser source 10 should be modified to H1=H/(1-20%)=1234mJ.
The area of ACF is 10 × 0.2cm=2cm2, scan area (12cm × 0.3cm, RECTANGULAR BEAM spot is long 2mm in the length of ACF, wide 1mm on width)=3.6cm2, scan area is greater than ACF area, so heat is lost, the thermal value of ultra-violet laser source 10 should be modified to H2=H1/(2/3.6)=2221.2mJ.
Irradiation time is 0.5s for the first time, so power=H2/0.5=4442.4mW.
Choosing laser source power is 8W, wavelength 355nm, all-solid-state ultraviolet laser.First time, irradiation power was 4500mW, and irradiation time is 0.5s.The power density be radiated on ACF 15 is 4500/3.6=1250 mJ/cm2.
The laser energy of constant temperature (second time irradiation power) is kept to need actual measurement in molten condition.ACF different with the heat dispersion of this pressing system (ITO glass is different with the heat dissipation characteristics of ito film), keep the heat difference needed during constant temperature, above-mentioned ACF insulation in the molten state approximately needs the laser of 150mJ to irradiate.Irradiation time is 9s, and recording curing degree (PerkinElmer DSC 8500) is 81.3%.
The sweep speed 600mm/s of total reflection galvanometer.
Here be application anisotropic conductive film of the present invention (ACF) Ultra-Violet Laser nation determine device carry out thermohardening type ACF be warmed up to the gradient calculation of laser power needed for melt temperature and solidification temperature and set time mensuration example:
ACF weighs, and in order to weigh accurately, gets that 40cm is long, 2mm is wide, the ACF of thickness 25 μm (adopting the Fisher ACF 6005 of Shenzhen City Feishier Industry Co., Ltd) weighs, m=0.0235g, show that long this ACF weight of 10cm is 0.0059g.
ACF Specific Heat Measurement: by the ACF precise of certain length and width, this ACF is measured its specific heat in DSC.DSC programming rate is 10 DEG C/min.The specific heat recording above-mentioned Fisher ACF 6010-UV is λ=1.918J/(g DEG C)
ACF melt temperature measures: the melt temperature measuring above-mentioned Fisher ACF 6010-UV through thermal dilatometer DIL402C is 117 DEG C-125 DEG C.To this ACF is elevated to melt temperature 125 DEG C from 25 DEG C of room temperatures, then Δ t=100 DEG C.
ACF is warmed up to 125 DEG C of institute's heat requirements from 25 DEG C: H=λ m Δ t=1.918 × 0.0059 × 100=1131.6mJ.
Laser is through air, galvanometer 12 and quartz base 13, ito glass or ito film 14, and energy approximately loses 20%, heat H1=H/ (the 1-20%)=1414.5mJ of ultra-violet laser source.
The area of ACF is 10 × 0.2cm=2cm2, scan area (12cm × 0.3cm, RECTANGULAR BEAM spot sweep length is than 2mm long in the length of ACF, wide 1mm on width)=3.6cm2, scan area is greater than ACF area, so heat is lost, the thermal value of ultra-violet laser source should be modified to H2=(H1/(2/3.6)=2546.1 mJ.
The time being warmed up to 125 DEG C by room temperature (25 DEG C) is 0.5s, so the power of ultra-violet laser source is 2546.1/0.5=5092mW.
Choosing laser power is 8W, wavelength 355nm, all-solid-state ultraviolet laser.Irradiation power is set as 5.1W for the first time.Irradiate ACF 0.5s, ACF is warmed up to molten condition.
Keep the laser energy of constant temperature (second time irradiation power) to need actual measurement in molten condition, above-mentioned ACF insulation in the molten state approximately needs the laser power of 150mW.Keep 2s to irradiate, make ACF insulation adhesive keep molten condition, better wettability is provided, thus improves cohesive strength.
The sweep speed 600mm/s of galvanometer 12.
ACF 6005 is warmed up to 185 DEG C of institute's heat requirement H3=λ m Δ t=1.918 × 0.0059 × (185 125)=678.9mJ from 125 DEG C.
ACF temperature rises to 185 DEG C from 125 DEG C, setting-up time 0.5s, the laser power H3/0.5=1357.9mW of needs, consider that light path loss and area amplify described in loss ditto, power correction is W2=(1357.9/ (1-20%))/(2/3.6)=3055.2mW.Setting second segment irradiation power degree is 3.1W, and irradiation time is 0.5s; The sweep speed 600mm/s of completely reflecting mirror.
Temperature keeps 185 DEG C, and laser power reduces to 150mW, prolonged exposure 7s, and recording curing degree is 82.5%.
Heat curing ACF temperature rises and timetable (table one)
Time (s) 0 0.5 2.5 3 4 5 6 7 8 9 10
Temperature (DEG C) 25 121.3 129 183.5 184.5 185.5 187 187.5 188 189 190.1
Heat curing laser irradiation power and the time table of comparisons (table two)
Time (s) 0 0.5 2.5 3 4 5 6 7 8 9 10
Laser power (W) 5.1 0.15 3.1 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15

Claims (6)

1. anisotropic conductive film Ultra-Violet Laser nation determines a device, it is characterized in that, it comprises ultra-violet laser source, optical processor, galvanometer, quartz base, pressure head, pressure control device, programming controller;
The material of this quartz base is ultraviolet optics quartz glass, in inverse u shape;
This pressure head is positioned at the top of this quartz base;
This pressure control device is positioned at above this pressure head, and this pressure control device connects this pressure head;
This programming controller is connected respectively with this ultra-violet laser source, optical processor, galvanometer, and this programming controller can control this ultra-violet laser source, optical processor, galvanometer;
Described optical processor processes the laser that ultra-violet laser source exports, Output of laser RECTANGULAR BEAM spot;
Above-mentioned laser RECTANGULAR BEAM spot irradiates through this quartz base by described galvanometer after total reflection.
2. a kind of anisotropic conductive film Ultra-Violet Laser nation according to claim 1 determines device, and it is characterized in that, the ultraviolet wavelength range of this ultra-violet laser source is at 180nm-400nm; The transmission region 180nm-2500nm of this quartz base, the wavelength coverage 100nm-400nm of ultraviolet light.
3. a kind of anisotropic conductive film Ultra-Violet Laser nation according to claim 1 determines device, it is characterized in that, this optical processor processes the laser that ultra-violet laser source exports, comprise: A, to expand, the rounded light beam of source laser bundle, diameter only has several microns to tens microns, must carry out expanding process, amplifying laser light beam; B, after expanding, shaping is carried out to laser beam, make it rectangular output; C, laser light field homogenising, namely expanding, shaping after make the uniform illumination of laser beam, the energy coincidence of each point on the xsect of the laser RECTANGULAR BEAM spot making it export; Laser RECTANGULAR BEAM spot even intensity after optical processor, in laser RECTANGULAR BEAM spot irradiation area, temperature rise is consistent.
4. a kind of anisotropic conductive film Ultra-Violet Laser nation according to claim 1 determines device, it is characterized in that, this galvanometer makes laser RECTANGULAR BEAM spot scan along the length direction of anisotropic conductive film by the motion of galvanometer while being radiated at by laser RECTANGULAR BEAM spot on the anisotropic conductive film that is placed between quartz base and pressure head after total reflection.
5. a kind of anisotropic conductive film Ultra-Violet Laser nation according to claim 4 determines device, it is characterized in that, the length of laser RECTANGULAR BEAM spot is greater than width about the 1mm of anisotropic conductive film, and width and the length ratio of laser RECTANGULAR BEAM spot are not less than 1/7.
6. a kind of anisotropic conductive film Ultra-Violet Laser nation according to claim 1 determines device, it is characterized in that, this programming controller for set and regulate and control the power of ultra-violet laser source and laser irradiation time, for set and control the laser RECTANGULAR BEAM spot that laser treatment device exports length and wide, for setting with control this galvanometer deflection angle and sweep frequency.
CN201410746474.0A 2014-12-09 2014-12-09 Ultraviolet laser bonding device for anisotropic conductive film Pending CN104460379A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105635679A (en) * 2015-12-30 2016-06-01 深圳市图雅丽特种技术有限公司 Active anti-glare night vision system of vehicle-mounted special device and realization method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105635679A (en) * 2015-12-30 2016-06-01 深圳市图雅丽特种技术有限公司 Active anti-glare night vision system of vehicle-mounted special device and realization method

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