CN104451873A - Preparation method of silicon ingot and silicon ingot - Google Patents
Preparation method of silicon ingot and silicon ingot Download PDFInfo
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- CN104451873A CN104451873A CN201410668000.9A CN201410668000A CN104451873A CN 104451873 A CN104451873 A CN 104451873A CN 201410668000 A CN201410668000 A CN 201410668000A CN 104451873 A CN104451873 A CN 104451873A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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Abstract
The invention provides a preparation method of a silicon ingot and a silicon ingot. The preparation method comprises the following steps: placing a crucible with a silicon raw material into an ingot furnace, heating the crucible, and enabling the silicon raw material to be primarily molten to form primary molten silicon; reducing the temperature on the bottom of the crucible, so that partial first molten silicon is primarily crystallized to form primary crystal silicon; heating the crucible, so that partial primary crystal silicon is secondarily molten, and forming secondary molten silicon in the crucible; reducing the temperature on the bottom of the crucible, so that the secondary molten silicon is secondarily crystallized to form secondary crystal silicon; and annealing and cooling the secondary crystal silicon to obtain silicon ingot. By adopting the preparation method, foreign matters can be further fractionally condensed, so that the content of foreign matters in the silicon ingot and the defect density can be reduced, and the quality of the silicon ingot formed in the growing manner can be improved.
Description
Technical field
The present invention relates to field of photovoltaic technology, in particular to a kind of preparation method and silicon ingot of silicon ingot.
Background technology
At present, in the production of silicon ingot, generally adopt fritting technology or have seed crystal high-efficiency polycrystalline technology (little crystal grain).Ingot casting material, for not lay broken seed crystal in crucible bottom, directly installs in crucible by the main technique of so-called fine melt technology, then by step growing polycrystalline silicon ingots such as the long crystalline substances of fusing.Because crucible bottom does not lay broken seed, make the long brilliant initial stage less at the nucleation rate of crucible bottom, thus cause the size of grown crystal grain comparatively large, finally make the efficiency of formed battery lower.So-called fritting technology lays broken seed crystal in crucible bottom, reinstalls ingot casting material, then by step growing polycrystalline silicon ingots such as the long crystalline substances of fusing.Because bottom melting process, seed crystal retains to some extent, therefore can retain seed crystal for long brilliant point of beginning with bottom in long brilliant process, larger nucleation rate can be obtained like this, thus obtain less crystal grain, and then reduce the dislocation desity of silicon ingot entirety to a certain extent, promote battery efficiency.
But, existing have the growth method of seed crystal high-efficiency polycrystalline need require bottom seed crystal can not melt, therefore in melting process bottom temp to control lower, bottom such guarantee seed crystal retain.Meanwhile, because a large amount of latent heat accumulated by silicon material in melting process, this part latent heat to be discharged before long crystalline substance starts, so need lower bottom temp.When latent heat treatment to can long crystalline substance time, temperature has controlled to lower, therefore the brilliant speed of length at long brilliant initial stage can be larger, the larger brilliant speed of length of long brilliant initial stage can make impurity can not fractional condensation timely, the growth stress at long brilliant initial stage can not discharge timely, simultaneously also for the elongation growth of dislocation provides good condition.Therefore there is the bottom red sector of seed crystal efficient polycrystalline silicon ingot higher, thus the battery efficiency of silicon chip bottom silico briquette can be affected, and then affect the volume recovery of silicon ingot.
The reason causing bottom red sector to raise has two aspects, first aspect be silicon ingot impurities at bottom content more (with carbon and metallic element in the majority), these impurity can cause the distortion of silicon crystalline structure, thus defect is caused in silicon ingot, and these elements can become stronger deathnium, thus can minority carrier life time be reduced, namely make red sector ratio increase; Second aspect is that the initial stage of crystal growth is due to reasons such as stress, seed crystal spaces, make crystals can there is larger dislocation desity, and dislocation has derivative, it can along the direction elongation growth of crystal growth, dislocation is caused to rise in value, thus cause the dislocation desity of silicon ingot to raise, and then bottom red sector is raised.Therefore, the impurity segregation how improving the long brilliant initial stage also reduces the dislocation desity at long brilliant initial stage, becomes the technical barrier that this area is urgently to be resolved hurrily.
Summary of the invention
Main purpose of the present invention is the preparation method and the silicon ingot that provide a kind of silicon ingot, to improve the impurity segregation at long brilliant initial stage and to reduce the dislocation desity at long brilliant initial stage, and then improve form problem in the qualitative techniques of silicon ingot.
To achieve these goals, according to an aspect of the present invention, provide a kind of preparation method of silicon ingot, this preparation method comprises the following steps: the crucible that silicon raw material is housed is placed in ingot furnace, and heats to make silicon raw material by first time fusing formation first molten silicon to crucible; Reduce the temperature of crucible bottom, form first crystal silicon to make part first molten silicon by first vice-minister's crystalline substance; Crucible is heated, to make part first crystal silicon by second time fusing, and in crucible, forms the second molten silicon; Reduce the temperature of crucible bottom, form the second crystalline silicon to make whole second molten silicon by second vice-minister's crystalline substance; Second crystalline silicon is annealed and cools, to obtain silicon ingot.
Further, silicon raw material comprises seed crystal and ingot casting silicon material, and the step forming the first molten silicon comprises: the seed crystal laying 10 ~ 20Kg in the bottom of crucible, then loads ingot casting silicon material on seed crystal; The temperature controlling point carrying out being heated to ingot furnace reaches 1200 ~ 1500 DEG C, then the height of the sidepiece heat-insulation cage of ingot furnace is adjusted to 3 ~ 7cm, to make ingot casting silicon material and part seed crystal fusing formation first molten silicon.
Further, in the step of formation first molten silicon, keep the fusing point of temperature lower than silicon raw material of crucible bottom, and silicon raw material is melted with the speed of 15 ~ 25mm/h.
Further, after forming the first molten silicon, the height of remaining seed crystal is 7 ~ 15cm.
Further, seed crystal is polycrystalline broken silicon material or the broken silicon material of monocrystalline, and the size of seed crystal is 3 ~ 8mm
3.
Further, in the step forming first crystal silicon, by the height of sidepiece heat-insulation cage is adjusted to 10 ~ 12cm, to reduce the temperature of crucible bottom.
Further, in the step forming first crystal silicon, height of formation is the first crystal silicon of 1/6 ~ 1/3 of the height of silicon ingot.
Further, formed in the step of the second molten silicon, by the temperature controlling point of ingot furnace is adjusted to 1450 ~ 1500 DEG C, and keep the invariant position of sidepiece heat-insulation cage, to reduce the temperature of crucible bottom.
Further, after forming the second molten silicon, the height of remaining first crystal silicon is 1/12 ~ 1/8 of the height of silicon ingot.
Further, formed in the step of the second crystalline silicon, by the height of sidepiece heat-insulation cage is adjusted to 12 ~ 18cm, and keep the temperature-resistant of the temperature controlling point of ingot furnace, to reduce the temperature of crucible bottom.
Further, the speed of second vice-minister's crystalline substance is 5 ~ 10mm/h.
Meanwhile, present invention also offers a kind of silicon ingot, this silicon ingot is prepared from by preparation method provided by the invention.
Apply technical scheme of the present invention, the present invention is by after formation first crystal silicon, make part first crystal silicon by second time fusing formation second molten silicon, and make whole second molten silicon form the second crystalline silicon by second vice-minister's crystalline substance, thus make impurity obtain further fractional condensation, and then reduce the content of the impurity in formed silicon ingot.Simultaneously, seed crystal due to second vice-minister's crystalline substance is the crystalline structure that first vice-minister's crystalline substance obtains, the seed crystal of second vice-minister's crystalline substance is compared compared with the seed crystal of first vice-minister's crystalline substance and experienced by the high temperature stress release stage, therefore the stress of the seed crystal of second vice-minister's crystalline substance can reduce, and defect concentration can reduce, thus make the quality of the seed crystal of second vice-minister's crystalline substance more excellent compared with the seed crystal of first vice-minister's crystalline substance.And the seed crystal of second vice-minister's crystalline substance is equivalent to a monoblock silico briquette, there is no obvious space, thus the defect source in the brilliant process of the second vice-minister obviously can be reduced, and then effectively block the elongation growth of dislocation, and further increase the quality that growth forms silicon ingot.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the schematic flow sheet of the preparation method of the silicon ingot that embodiment of the present invention provides.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
From background technology, the preparation method of existing silicon ingot the foreign matter content that formed bottom silicon ingot more, and it is close to there is larger dislocation.The present inventor studies for the problems referred to above, proposes a kind of preparation method of silicon ingot.As shown in Figure 1, this preparation method comprises the following steps: the crucible that silicon raw material is housed is placed in ingot furnace, and heats to make silicon raw material by first time fusing formation first molten silicon to crucible; Reduce the temperature of crucible bottom, form first crystal silicon to make part first molten silicon by first vice-minister's crystalline substance; Crucible is heated, to make part first crystal silicon by second time fusing, and in crucible, forms the second molten silicon; Reduce the temperature of crucible bottom, form the second crystalline silicon to make whole second molten silicon by second vice-minister's crystalline substance; Second crystalline silicon is annealed and cools, to obtain silicon ingot.
Above-mentioned preparation method is by after formation first crystal silicon, make part first crystal silicon by second time fusing formation second molten silicon, and make whole second molten silicon form the second crystalline silicon by second vice-minister's crystalline substance, thus make impurity obtain further fractional condensation, and then reduce the content of the impurity in formed silicon ingot.Simultaneously, seed crystal due to second vice-minister's crystalline substance is the crystalline structure that first vice-minister's crystalline substance obtains, the seed crystal of second vice-minister's crystalline substance is compared compared with the seed crystal of first vice-minister's crystalline substance and experienced by the high temperature stress release stage, therefore the stress of the seed crystal of second vice-minister's crystalline substance can reduce, and defect concentration can reduce, thus make the quality of the seed crystal of second vice-minister's crystalline substance more excellent compared with the seed crystal of first vice-minister's crystalline substance.And the seed crystal of second vice-minister's crystalline substance is equivalent to a monoblock silico briquette, there is no obvious space, thus the defect source in the brilliant process of the second vice-minister obviously can be reduced, and then effectively block the elongation growth of dislocation, and further increase the quality that growth forms silicon ingot.
The illustrative embodiments of preparation method will described in more detail according to silicon ingot provided by the invention below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to embodiment set forth herein.Should be understood that, provide these embodiments be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
First, the crucible that silicon raw material is housed is placed in ingot furnace, and heats to make silicon raw material by first time fusing formation first molten silicon to crucible.In a preferred embodiment, silicon raw material comprises seed crystal and ingot casting silicon material, and the step now forming the first molten silicon comprises: the seed crystal laying 10 ~ 20Kg in the bottom of crucible, then loads ingot casting silicon material on seed crystal; The temperature controlling point carrying out being heated to ingot furnace reaches 1200 ~ 1500 DEG C, then the height of the sidepiece heat-insulation cage of ingot furnace is adjusted to 3 ~ 7cm, to make ingot casting silicon material and part seed crystal fusing formation first molten silicon.Certainly, silicon raw material also can be all ingot casting silicon material, does not namely lay seed crystal in the bottom of crucible.Wherein, silicon ingot stove can adopt GT ingot furnace.
In this step, need the fusing point keeping the temperature of crucible bottom lower than silicon raw material, and silicon raw material is melted with the preferred rate of 15 ~ 25mm/h.Meanwhile, in this step, need to keep thermograde (being generally about 150 ~ 200 DEG C) larger up and down, and keep silicon material to have certain burn-off rate (being generally 15mm/h ~ 25mm/h).Preferably, after forming the first molten silicon, the height of remaining seed crystal is 7 ~ 15cm.Wherein, seed crystal can be polycrystalline broken silicon material or the broken silicon material of monocrystalline, and the size of seed crystal is preferably 3 ~ 8mm
3.It should be noted that after crucible is placed in solidifies stove, also comprise the step that ingot furnace is vacuumized.
Complete and the crucible that silicon raw material is housed is placed in ingot furnace, and after crucible is heated to make the step of silicon raw material by first time fusing formation first molten silicon, reduce the temperature of crucible bottom, form first crystal silicon to make part first molten silicon by first vice-minister's crystalline substance.In this step, can by regulating the temperature of temperature controlling point and the aperture of heat-insulation cage, make the silicon liquid of melting rapid forming core on not molten silicon material, form uniform little crystal grain, little crystal grain is oriented growth under orientation temperature gradient straight up.In a preferred embodiment, by the height of sidepiece heat-insulation cage is adjusted to 10 ~ 12cm, to reduce the temperature of crucible bottom.
The height of above-mentioned first crystal silicon can set according to actual process demand.In order to make impurity obtain fractional condensation further, the content of the impurity in low the formed silicon ingot of a step-down of going forward side by side, height of formation is the first crystal silicon of 1/6 ~ 1/3 of the height of silicon ingot in a preferred embodiment.Certainly, the height of first crystal silicon is not limited in above-mentioned preferred implementation.
Complete the temperature reducing crucible bottom, after making the step of part first molten silicon by first vice-minister's crystalline substance formation first crystal silicon, crucible is heated, to make part first crystal silicon by second time fusing, and in crucible, forms the second molten silicon.After forming the second molten silicon, the height of remaining first crystal silicon can set according to actual process demand.Preferably, the height of remaining first crystal silicon is 1/12 ~ 1/8 of the height of silicon ingot.
In this step, those skilled in the art can by regulating the temperature to reduce crucible bottom such as the temperature controlling point of ingot furnace and the position of sidepiece heat-insulation cage.In a preferred embodiment, by the temperature controlling point of ingot furnace is adjusted to 1450 ~ 1500 DEG C, and keep the invariant position of sidepiece heat-insulation cage, to reduce the temperature of crucible bottom.Now, the temperature of crucible top is raised, can ensure that again crucible bottom has lower temperature simultaneously, thus make the directed fusing from top to bottom of first crystal silicon, can also increase simultaneously form the temperature of the second molten silicon, and then increase the mobility of the second molten silicon, for next step impurity segregation lays the foundation.
Complete and crucible is heated, to make part first crystal silicon by second time fusing, and form the step of the second molten silicon in crucible after, reduce the temperature of crucible bottom, form the second crystalline silicon to make whole second molten silicon by second vice-minister's crystalline substance.In this step, the method reducing the temperature of crucible bottom has a variety of, such as, improve the height of sidepiece heat-insulation cage, or reduces the temperature controlling point etc. of ingot furnace.In a preferred embodiment, by the height of sidepiece heat-insulation cage is adjusted to 12 ~ 18cm, and keep the temperature-resistant of the temperature controlling point of ingot furnace, to reduce the temperature of crucible bottom.Now, the temperature of crucible bottom is able to slow reduction, thus reach the condition of oriented growth, simultaneously because the aperture of sidepiece cage increases, heat radiation is increased, and temperature need to remain unchanged, therefore the power of well heater can increase naturally, thus the temperature of top silicon liquid can be increased, the mobility of silicon liquid is increased, and then is conducive to the fractional condensation of impurity.Meanwhile, this selection process can also make second vice-minister's crystalline substance slowly carry out, thus is conducive to eliminating dislocation.
Wherein, the speed of second vice-minister's crystalline substance can set according to actual process demand.Preferably, the speed of second vice-minister's crystalline substance is 5 ~ 10mm/h.It should be noted that in this step, adjustment the temperature controlling point temperature of ingot furnace and the mode of sidepiece cage aperture can also be continued through and control long brilliant speed, long brilliant stablizing is carried out until grow end.
Complete the temperature reducing crucible bottom, after making the step of whole second molten silicon by second vice-minister's crystalline substance formation the second crystalline silicon, the second crystalline silicon is annealed and cools, to obtain silicon ingot.When adopting seed crystal technique, after this step, obtain the little and uniform polycrystal silicon ingot of crystal grain.The processing parameter of annealing and cooling can set according to actual process demand, does not repeat them here.
Meanwhile, present invention also offers a kind of silicon ingot, this silicon ingot is prepared from by preparation method provided by the invention.In this silicon ingot, the content of impurity and the density of dislocation are minimized, and then the quality of silicon ingot is improved.
As can be seen from the above embodiments, the above-mentioned example of the present invention achieves following technique effect: the present invention is by after forming first crystal silicon, make part first crystal silicon by second time fusing formation second molten silicon, and make whole second molten silicon form the second crystalline silicon by second vice-minister's crystalline substance, thus make impurity obtain further fractional condensation, and then reduce the content of the impurity in formed silicon ingot.Simultaneously, seed crystal due to second vice-minister's crystalline substance is the crystalline structure that first vice-minister's crystalline substance obtains, the seed crystal of second vice-minister's crystalline substance is compared compared with the seed crystal of first vice-minister's crystalline substance and experienced by the high temperature stress release stage, therefore the stress of the seed crystal of second vice-minister's crystalline substance can reduce, and defect concentration can reduce, thus make the quality of the seed crystal of second vice-minister's crystalline substance more excellent compared with the seed crystal of first vice-minister's crystalline substance.And the seed crystal of second vice-minister's crystalline substance is equivalent to a monoblock silico briquette, there is no obvious space, thus the defect source in the brilliant process of the second vice-minister obviously can be reduced, and then effectively block the elongation growth of dislocation, and further increase the quality that growth forms silicon ingot.
These are only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. a preparation method for silicon ingot, is characterized in that, described preparation method comprises the following steps:
The crucible that silicon raw material is housed is placed in ingot furnace, and heats to make described silicon raw material by first time fusing formation first molten silicon to described crucible;
Reduce the temperature of described crucible bottom, form first crystal silicon to make described first molten silicon of part by first vice-minister's crystalline substance;
Described crucible is heated, to make the described first crystal silicon of part by second time fusing, and forms the second molten silicon in described crucible;
Reduce the temperature of described crucible bottom, form the second crystalline silicon to make all described second molten silicons by second vice-minister's crystalline substance;
Described second crystalline silicon is annealed and cooled, to obtain described silicon ingot.
2. preparation method according to claim 1, is characterized in that, described silicon raw material comprises seed crystal and ingot casting silicon material, and the step forming described first molten silicon comprises:
Lay the described seed crystal of 10 ~ 20Kg in the bottom of described crucible, then on described seed crystal, load ingot casting silicon material;
The temperature controlling point carrying out being heated to described ingot furnace reaches 1200 ~ 1500 DEG C, then the height of the sidepiece heat-insulation cage of described ingot furnace is adjusted to 3 ~ 7cm, forms described first molten silicon to make described ingot casting silicon material and the fusing of part described seed crystal.
3. preparation method according to claim 2, is characterized in that, in the step forming described first molten silicon, keeps the temperature of described crucible bottom lower than the fusing point of described silicon raw material, and described silicon raw material is melted with the speed of 15 ~ 25mm/h.
4. preparation method according to claim 2, is characterized in that, after forming described first molten silicon, the height of remaining described seed crystal is 7 ~ 15cm.
5. preparation method according to claim 2, is characterized in that, described seed crystal is polycrystalline broken silicon material or the broken silicon material of monocrystalline, and the size of described seed crystal is 3 ~ 8mm
3.
6. preparation method according to claim 2, is characterized in that, in the step forming described first crystal silicon, by the height of described sidepiece heat-insulation cage is adjusted to 10 ~ 12cm, to reduce the temperature of described crucible bottom.
7. preparation method according to claim 6, is characterized in that, in the step forming described first crystal silicon, height of formation is the described first crystal silicon of 1/6 ~ 1/3 of the height of described silicon ingot.
8. preparation method according to claim 6, it is characterized in that, formed in the step of described second molten silicon, by the temperature controlling point of described ingot furnace is adjusted to 1450 ~ 1500 DEG C, and keep the invariant position of described sidepiece heat-insulation cage, to reduce the temperature of described crucible bottom.
9. preparation method according to claim 8, is characterized in that, after forming described second molten silicon, the height of remaining described first crystal silicon is 1/12 ~ 1/8 of the height of described silicon ingot.
10. preparation method according to claim 8, it is characterized in that, formed in the step of described second crystalline silicon, by the height of described sidepiece heat-insulation cage is adjusted to 12 ~ 18cm, and keep the temperature-resistant of the temperature controlling point of described ingot furnace, to reduce the temperature of described crucible bottom.
11. preparation methods according to claim 10, is characterized in that, the speed of described second vice-minister's crystalline substance is 5 ~ 10mm/h.
12. 1 kinds of silicon ingots, is characterized in that, described silicon ingot is the preparation method according to any one of claim 1 to 11 be prepared from.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114351250A (en) * | 2022-01-07 | 2022-04-15 | 安顺学院 | Process for controlling growth rate and improving quality of ingot polycrystalline silicon crystal |
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| CN102776556A (en) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot and preparation method thereof as well as polycrystalline silicon wafer |
| CN102943304A (en) * | 2012-12-07 | 2013-02-27 | 英利能源（中国）有限公司 | Polysilicon ingot and manufacturing method of same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102776556A (en) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot and preparation method thereof as well as polycrystalline silicon wafer |
| CN102943304A (en) * | 2012-12-07 | 2013-02-27 | 英利能源（中国）有限公司 | Polysilicon ingot and manufacturing method of same |
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| CN114351250A (en) * | 2022-01-07 | 2022-04-15 | 安顺学院 | Process for controlling growth rate and improving quality of ingot polycrystalline silicon crystal |
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Application publication date: 20150325 |