CN104447838B - A kind of beta diimine radical silicide and its application - Google Patents
A kind of beta diimine radical silicide and its application Download PDFInfo
- Publication number
- CN104447838B CN104447838B CN201410621227.8A CN201410621227A CN104447838B CN 104447838 B CN104447838 B CN 104447838B CN 201410621227 A CN201410621227 A CN 201410621227A CN 104447838 B CN104447838 B CN 104447838B
- Authority
- CN
- China
- Prior art keywords
- lithium salts
- lithium
- reactant mixture
- obtains
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910000071 diazene Inorganic materials 0.000 title claims abstract description 27
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910003002 lithium salt Inorganic materials 0.000 claims abstract description 41
- 159000000002 lithium salts Chemical class 0.000 claims abstract description 41
- 239000000243 solution Substances 0.000 claims abstract description 32
- 239000000376 reactant Substances 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 24
- 238000003756 stirring Methods 0.000 claims abstract description 23
- 239000007787 solid Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000706 filtrate Substances 0.000 claims abstract description 8
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 239000012266 salt solution Substances 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 62
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 49
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 27
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 24
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 9
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 claims description 7
- 238000003786 synthesis reaction Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000012141 concentrate Substances 0.000 claims description 2
- 239000012065 filter cake Substances 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- -1 alkyl lithium Chemical compound 0.000 abstract description 6
- 229910052744 lithium Inorganic materials 0.000 abstract description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005292 vacuum distillation Methods 0.000 abstract 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 5
- IHLVCKWPAMTVTG-UHFFFAOYSA-N lithium;carbanide Chemical compound [Li+].[CH3-] IHLVCKWPAMTVTG-UHFFFAOYSA-N 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052794 bromium Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 231100000252 nontoxic Toxicity 0.000 description 3
- 230000003000 nontoxic effect Effects 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 230000001988 toxicity Effects 0.000 description 3
- 231100000419 toxicity Toxicity 0.000 description 3
- 229910003910 SiCl4 Inorganic materials 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 229910003828 SiH3 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- DVHMVRMYGHTALQ-UHFFFAOYSA-N silylhydrazine Chemical compound NN[SiH3] DVHMVRMYGHTALQ-UHFFFAOYSA-N 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 208000016261 weight loss Diseases 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Abstract
The present invention relates to a kind of beta diimine radical silicide, prepared using following methods：(1) beta diimine or derivatives thereof is dissolved in reaction dissolvent, the mol ratio that alkyl lithium solution, beta diimine or derivatives thereof and lithium alkylide are added under 78~0 DEG C of stirring conditions is 1:1~1.2；Continue stirring reaction 0.5~3 hour after returning to room temperature, obtain reactant mixture；(2) reactant mixture for obtaining step (1) filters, and obtains lithium salts solid, lithium salts solid is dissolved in organic solvent, obtains lithium salt solution；(3) at 78~0 DEG C according to lithium salts and siliceous reactant molar ratio 1~4：1, siliceous reactant or its solution are added dropwise into lithium salt solution, rises to certain temperature and reacts 3~10 hours；(4) reactant mixture that step (3) obtains is filtered, is crystallized after filtrate concentration or vacuum distillation obtains radical silicide containing beta diimine.Compound of the present invention can be used to prepare silicon nitride, containing films such as carbonitride of silicium in integrated circuit production.
Description
Technical field
The present invention relates to a kind of organo-silicon compound that there is specific structure to be beta diimine base, such compound can be used as
Integrated circuit thin-film material proplastid, belongs to technical field of microelectronic material.
Background technology
With the quick and benign development of IC industry, the requirement of industry associated therewith also has high-tech to contain therewith
Amount, high-quality requirement, high entry threshold three high requests industry characteristic, this for whole integrated circuit associated materials,
It is to face new challenges and opportunity.
In the numerous process procedures of integrated circuit, silicon-containing film be used as capacitor films, gate pole film, stop not, door
The optical component of the optical communication equipment such as the electronic component or fiber waveguide of the electronic units such as pole dielectric film, photoswitch, image intensifer,
There is indispensable status in fields such as photoelectric materials, thus be accordingly used in the silicon-containing film proplastid material of integrated circuit fields
Developing has highly important practical significance and value.
In CVD/ALD technologies, the property of proplastid is most important, and it requires that proplastid has appropriate thermostabilization
Property and it is higher it is volatile should also have that preparation is simple simultaneously, easily transport and the features such as storage in favor of producing and use.
Silicon-containing film proplastid material is gradually from traditional material such as silane, silicon tetrachloride, disilicone hexachloride, dimethyl dichloro at present
Silane, dichlorosilane etc. have at 3 points to the organo-silicon compound transition with specific structure group, main cause：1) traditional antecedent
Body material is mostly that gas or highly volatile liquid are not easy storage and transport；2) traditional proplastid material has suitable poison
Property, simultaneously because the active chemical property of the extreme of itself easily causes danger, it is necessary to which putting into extensive fund is used for security work；
3) the general content of halogen of traditional proplastid material is high, and excessive hydrogen chloride is easily produced in film-forming process, equipment can be produced
Corrosion.These reasons largely hinder the industrialization development of traditional silicon-containing film proplastid material, while with collection
Into the rapid development of circuit industry, it is badly in need of one or more of new materials to make up the deficiency of traditional material, and then substitute tradition
Material, realize industrialization.Then researchers start sight to be turned to one after another the organo-silicon compound with specific structure group.
Patent CN101648964A and CN102282291A disclose amino silane proplastid, and CN1518076A is disclosed
Diazanyl silane proplastid, this two classes proplastid solve the problems, such as the highly volatile of traditional material to a certain extent, and conveniently
Storage, but due to itself containing more si-h bond, property is active, therefore there are still some potential danger and with one
Fixed toxicity.Patent US2010/0285663A1 mainly describes the amino silane antecedent using disilicone hexachloride as basic boom
Body, such proplastid small toxicity and activity is moderate, but due to the presence of Si prediction skeleton, make it on the contrary to a certain extent
Under volatility is relatively low, it is unfavorable for the further film forming application of presoma, while the synthesis of such material is relative complex.Thus may be used
See, in disclosed patent, although the proplastid for the silicon-containing film material having now been found that all solves to a certain extent
It is insufficient existing for traditional proplastid material, but it is provided simultaneously with suitable heat endurance, activity and relative nontoxic and easily
The proplastid material of synthesis is still very necessary, and has considerable actual application value.
The content of the invention
The purpose of the present invention is to overcome traditional silicon-containing film material proplastid and the deficiencies in the prior art, there is provided
A kind of new type integrated circuit thin-film material beta diimine radical silicide proplastid, in n-hexane, toluene, ether, dichloromethane
There is preferable dissolubility in the organic solvents such as alkane, tetrahydrofuran, there is good volatility and heat endurance, small toxicity, activity
It is moderate, convenient storage and transport, there is good filming performance.
According to technical scheme provided by the invention, the antecedent of silicon compound containing beta diimine ligand with formula (I)
Body：
Wherein R1、R2Independent is selected from C1~C10Alkyl (such as methyl, ethyl, n-propyl, isopropyl), C2~C10Alkene
Base (such as vinyl, pi-allyl), C2~C10Alkynyl group (such as acetenyl, propargyl), C3~C10Cycloalkyl (such as cyclopropyl,
Cyclopenta, cyclohexyl etc.), C6~C17Aryl (such as phenyl, o-tolyl, naphthyl), wherein R3、R4、R5Independent is former selected from hydrogen
Son, halogen atom (F, Cl, Br, I), C1~C10Alkyl, C2~C10Alkenyl, C2~C10Alkynyl group, C3~C10Cycloalkyl, C6~
C17Aryl ,-Si (R3R4R5)、Or-N (R6R7), wherein R6、R7Independent is selected from hydrogen atom, C1~C10Alkane
Base, C2~C10Alkenyl, C2~C10Alkynyl group, C3~C10Cycloalkyl, C6~C17Aryl, wherein R6、R7It is asynchronously hydrogen atom.
The synthetic method of the prepared radical silicide containing beta diimine that can be used as integrated circuit thin-film material proplastid,
It is characterized in that comprise the following steps：
(1) beta diimine or derivatives thereof is dissolved in reaction dissolvent, beta diimine or derivatives thereof and reaction dissolvent
Mass ratio is 1:10~1:20, add alkyl lithium solution, beta diimine or derivatives thereof under conditions of being kept stirring at -78~0 DEG C
Mol ratio with lithium alkylide is 1:1~1.2, the concentration of alkyl lithium solution is 1.0~2.5M, mixing speed is 800~2000 turns/
Minute；Continue stirring reaction 0.5~3 hour after returning to room temperature, obtain reactant mixture, further, the reaction dissolvent
For n-hexane, toluene, dichloromethane, tetrahydrofuran or ether；
(2) reactant mixture for obtaining step (1) filters, and collects filter cake, lithium salts solid is obtained, by lithium salts solid with having
Solvent mixes, and the mass ratio of lithium salts solid and organic solvent is 1:10~20, lithium salt solution is obtained, it is further, described anti-
It is n-hexane, toluene, dichloromethane, tetrahydrofuran or ether to answer solvent；
(3) at -78~0 DEG C according to lithium salts and siliceous reactant molar ratio 1~4:1, it is added dropwise and contains into above-mentioned lithium salt solution
Pasc reaction thing or its solution, wherein solvent for use are n-hexane, toluene, dichloromethane, tetrahydrofuran or ether, are slowly increased to one
Constant temperature degree, wherein the temperature is reflux temperature corresponding to room temperature to solvent for use, continue stirring reaction 3~10 at this temperature
Hour；
(4) reactant mixture that step (3) obtains is filtered, low temperature crystallization or decompression steaming after filter vacuum concentration
Evaporate to obtain the radical silicide containing beta diimine of formula (I)；
(5) or after step (3) stirs 3~10 hours, at -78~0 DEG C, the organic of 1~10 molar equivalent is added
Amine, certain temperature is slowly increased to, the temperature is reflux temperature corresponding to room temperature to solvent for use, is further continued for stirring at this temperature
Mix reaction 3~10 hours, filter vacuum concentration after low temperature crystallization or be evaporated under reduced pressure obtain the silicon of base containing beta diimine of formula (I)
Compound.
Further, above-mentioned all steps are carried out under the inert gas such as protection of nitrogen, argon gas.
Further, alkyl lithium solution described in step (1) be lithium methide, n-BuLi, tert-butyl lithium ether or
Hexane solution.
Further, in the step (3), siliceous reactant is SiX4、SiHX3、SiH2X2、SiH3X、Si2X6、(CH3)3SiX、(CH3)2SiX2、(CH3)SiX3、(CH3)2SiHX、(CH3)SiH2X、(CH3)SiHX2In one kind, wherein X=F, Cl, Br
Or I.
Further, in the step (3) and (5), programming rate is 0.5~1 DEG C/min.
Further, organic amine has following structure in the step (5)：R6R7NH, wherein R6、R76Independent is selected from hydrogen
Atom, C1~C10Alkyl, C2~C10Alkenyl, C2~C10Alkynyl group, C3~C10Cycloalkyl, C6~C17Aryl, further
R6、R7It is asynchronously from hydrogen atom.
Further, the reactant mixture that the step (4) or (5) obtain is filtered, and after filtrate is concentrated, then is carried out
Low temperature crystallization, or be evaporated under reduced pressure and obtain described radical silicide containing beta diimine；The condition of filtrate concentration is：20
~50 DEG C are concentrated under reduced pressure, and it is -0.1~-0.01MPa to concentrate or be evaporated under reduced pressure pressure.
Further, by chemical vapor deposition (CVD) or ald (ALD) technique, silicon-containing film is prepared.
Further, above-mentioned depositing temperature is 30~900 DEG C.
Further, described reacting gas can be that its own is formed with the one or more in nitrogen, hydrogen, argon gas
Mixed gas.
Further, the film is using proplastid as claimed in claim 1 and ammonia, nitrous oxide, an oxidation
One or more of reactions in nitrogen, oxygen, ozone, vapor are made.
Further, the film includes silicon nitride, containing carbonitride of silicium, silicon oxynitride, carborundum, silica, carbon doping
Silica and carbon doping silicon oxynitride film.
Further, above-mentioned deposition film technique, is preferentially sunk by using low-pressure chemical vapor deposition, Hot Filament Chemical Vapor
Product, ald, the ald of plasma enhancing, the chemical vapor deposition of plasma enhancing and plasma increase
Strong cyclic chemical vapor deposition is carried out.
The present invention has advantages below：
(1) synthesis condition is gentle, the synthesis cost of material before reducing；
(2) there is preferable dissolubility in the organic solvents such as toluene, ether, dichloromethane, tetrahydrofuran, n-hexane,
So that transport of materials, conveying, process become simple and easy to operate；
(3) this proplastid material non-toxic, lively type are moderate, and danger coefficient substantially reduces；
(4) there are good volatility and heat endurance, such as pass through test of thermogravimetric (TG) method to material thermal property, often
Pressure has following structureProplastid, its T50For 127 DEG C, minimum residual volume is up to 0%, (see Fig. 1)；
(5) there is good filming performance, still by taking above-mentioned proplastid as an example, with N2/H2Mixed gas is carrier gas and reacted, 600 DEG C
Under the conditions of, good cvd film can be formed, the scanning electron microscope (SEM) photograph of prepared film is shown in Fig. 2.
Brief description of the drawings
Describe technical scheme in detail referring to the drawings, wherein：
Fig. 1 is with structural formulaThe TG collection of illustrative plates of proplastid, abscissa are temperature, unit for DEG C, indulge
Coordinate is weight-loss ratio, unit %.
Fig. 2 is with structural formulaCVD film ESEM (SEM) figure of proplastid.
Embodiment
With reference to specific embodiment and accompanying drawing, the invention will be further described.
The preparation method of the proplastid of radical silicide containing beta diimine of the present invention, react and carry out by formula (I)：
Wherein R1、R2Independent is selected from C1~C10Alkyl, C2~C10Alkenyl, C2~C10Alkynyl group, C3~C10Cycloalkyl,
C6~C17Aryl, wherein R3、R4、R5Independent is selected from hydrogen atom, halogen atom (F, Cl, Br, I), C1~C10Alkyl, C2~C10
Alkenyl, C2~C10Alkynyl group, C3~C10Cycloalkyl, C6~C17Aryl ,-Si (R3R4R5)、Or-N
(R6R7), wherein R6、R7Independent is selected from hydrogen atom, C1~C10Alkyl, C2~C10Alkenyl, C2~C10Alkynyl group, C3~C10Ring
Alkyl, C6~C17Aryl, wherein R6、R7It is asynchronously hydrogen atom；
Wherein RLi solution is lithium methide, n-BuLi, the ether or hexane solution of tert-butyl lithium；
Wherein siliceous reactant is SiX4、SiHX3、SiH2X2、SiH3X、Si2X6、(CH3)3SiX、(CH3)2SiX2、(CH3)
SiX3、(CH3)2SiHX、(CH3)SiH2X、(CH3)SiHX2In one kind, wherein X=F, Cl, Br or I.
Embodiment one：A kind of preparation method of beta diimine radical silicide proplastid, comprises the following steps：
(1) willIt is dissolved in n-hexane solvent,With the quality of n-hexane solvent
Than for 1:10, added under conditions of being kept stirring at 0 DEG C in the diethyl ether solution of lithium methide,With lithium methide
Mol ratio is 1:1, the concentration of the diethyl ether solution of lithium methide is 1.0M, and mixing speed is 800 revs/min；It is follow-up to return to room temperature
Continuous stirring reaction 0.5 hour, obtains reactant mixture；
(2) reactant mixture for obtaining step (1) filters, and collects filter residue, obtains lithium salts solid, by lithium salts solid and just
Hexane mixes, and the mass ratio of lithium salts solid and n-hexane is 1:10, obtain the hexane solution of lithium salts；
(3) at 0 DEG C according to lithium salts and SiH2Br2Mol ratio 2:1, the hexane solution of lithium salts is added drop-wise to two SiH2Cl2's
In hexane solution, room temperature is to slowly warm up to, programming rate is 0.5 DEG C/min, continues stirring reaction at room temperature 10 hours；
(4) reactant mixture that step (3) obtains is filtered, after the lower 20 DEG C of filtrates that are concentrated under reduced pressure of -0.01MPa -
29 DEG C repeatedly recrystallize after obtain target product, structural formula is：Yield：79%, fusing point：181~183 DEG C.
Embodiment two：A kind of preparation method of beta diimine radical silicide proplastid, comprises the following steps：
(1) willIt is dissolved in toluene solvant,With
The mass ratio of toluene solvant is 1:15, added under conditions of being kept stirring at -39 DEG C in the hexane solution of tert-butyl lithium,Mol ratio with tert-butyl lithium is 1:1.1, the concentration of the hexane solution of tert-butyl lithium is
1.5M, mixing speed are 1500 revs/min；Continue stirring reaction 1.5 hours after returning to room temperature, obtain reactant mixture；
(2) reactant mixture for obtaining step (1) filters, and collects filter residue, lithium salts solid is obtained, by lithium salts solid and first
Benzene mixes, and the mass ratio of lithium salts solid and toluene is 1:20, obtain the toluene solution of lithium salts；
(3) at -39 DEG C according to lithium salts and SiF4Mol ratio 1:1, the toluene solution of lithium salts is added drop-wise to SiF4Toluene solution
In, 110 DEG C are to slowly warm up to, programming rate is 1 DEG C/min, continues stirring reaction at 110 DEG C 7 hours；
(4) recover to room temperature, the tert-butylamine of 6 molar equivalents of addition, be slowly increased to 110 DEG C, be further continued for stirring at this temperature
Reaction 5 hours is mixed, obtained reactant mixture is filtered, lower 30 DEG C of -0.03MPa is concentrated under reduced pressure after filtrate, at 0 DEG C repeatedly
Target product is obtained after recrystallization, structural formula is：Yield：92%, fusing point：251~254
℃。
Embodiment three：A kind of preparation method of beta diimine radical silicide proplastid, comprises the following steps：
(1) willIt is dissolved in ether solvent,Mass ratio with ether solvent is 1:
15, added under conditions of being kept stirring at -45 DEG C in the diethyl ether solution of tert-butyl lithium,With rubbing for tert-butyl lithium
You are than being 1:1.2, the concentration of the hexane solution of tert-butyl lithium is 1.6M, and mixing speed is 1000 revs/min；Return to room temperature
Continue stirring reaction afterwards 2 hours, obtain reactant mixture；
(2) reactant mixture for obtaining step (1) filters, and collects filter residue, lithium salts solid is obtained, by lithium salts solid and second
Ether mixes, and the mass ratio of lithium salts solid and ether is 1:20, obtain the diethyl ether solution of lithium salts；
(3) at -45 DEG C according to lithium salts and SiCl4Mol ratio 4:1, the toluene solution of lithium salts is added drop-wise to SiCl4Ether it is molten
In liquid, 30 DEG C are to slowly warm up to, programming rate is 1 DEG C/min, continues stirring reaction at 30 DEG C 4 hours；
(4) reactant mixture that step (3) obtains being filtered, lower 40 DEG C of -0.07MPa is concentrated under reduced pressure after filtrate, -
It is evaporated under reduced pressure under 0.1MPa and obtains target product, structural formula is：Yield：81%.
Example IV：A kind of preparation method of beta diimine radical silicide proplastid, comprises the following steps：
(1) willIt is dissolved in tetrahydrofuran solvent,With tetrahydrofuran
The mass ratio of solvent is 1:20, added under conditions of being kept stirring at -78 DEG C in the diethyl ether solution of n-BuLi,Mol ratio with n-BuLi is 1:1.2, the concentration of the diethyl ether solution of n-BuLi is 2.5M, is stirred
Speed is mixed as 2000 revs/min；Continue stirring reaction 3 hours after returning to room temperature, obtain reactant mixture；
(2) reactant mixture for obtaining step (1) filters, and collects filter residue, lithium salts solid is obtained, by lithium salts solid and second
Ether mixes, and the mass ratio of lithium salts solid and ether is 1:15, obtain the diethyl ether solution of lithium salts；
(3) at 34 DEG C according to lithium salts and (CH3)SiH2Cl mol ratios 1:1, the diethyl ether solution of lithium salts is added drop-wise to (CH3)
SiH2In Cl diethyl ether solution, continue stirring reaction at this temperature 3 hours；
(4) reactant mixture that step (3) obtains being filtered, lower 50 DEG C of -0.1MPa is concentrated under reduced pressure after filtrate, -
It is evaporated under reduced pressure under 0.01MPa and obtains target product, structural formula is：Yield：88%,.
Silicon compound containing beta diimine ligand obtained by the present invention may be used as CVD/ALD proplastid, pass through chemical gas
Mutually deposition (CVD) or ald (ALD) technique, form silicon nitride, silicon oxynitride, carborundum, silica, the nitrogen of carbon doping
The silicon oxynitride film of SiClx, the silica of carbon doping and carbon doping.Described deposition film technique, still more preferably passes through
Using low-pressure chemical vapor deposition, hot-wire chemical gas-phase deposition, ald, plasma enhancing ald, etc.
The chemical vapor deposition of gas ions enhancing and the cyclic chemical vapor deposition of plasma enhancing are carried out.
The present invention has advantages below：(1) synthesis condition is gentle, the synthesis cost of material before reducing；(2) in first
There is preferable dissolubility in the organic solvents such as benzene, ether, dichloromethane, tetrahydrofuran, n-hexane so that transport of materials, defeated
Send, process becomes simple and easy to operate；(3) this proplastid material non-toxic, lively type are moderate, and danger coefficient substantially reduces；(4)
There are good volatility and heat endurance, such as pass through test of thermogravimetric (TG) method to material thermal property, have under normal pressure as follows
StructureProplastid, its T50For 127 DEG C, minimum residual volume is up to 0%, (see Fig. 1)；(5) have it is good into
Film properties, still by taking above-mentioned proplastid as an example, with N2/H2Mixed gas is carrier gas, under the conditions of 600 DEG C, can form good cvd film, made
The scanning electron microscope (SEM) photograph of standby film is shown in Fig. 2.
Claims (8)
1. a kind of radical silicide containing beta diimine, its structural formula are：
2. a kind of method for preparing the radical silicide containing beta diimine as claimed in claim 1, it is characterized in that, including following synthesis
Step：
(1) willIt is dissolved in reaction dissolvent,With the matter of reaction dissolvent
Amount is than being 1:10~1:20, n-butyllithium solution is added under conditions of being kept stirring at -78~0 DEG C,
Mol ratio with n-BuLi is 1:1~1.2, the concentration of n-butyllithium solution is 1.0~2.5M, mixing speed is 800~
2000 revs/min；Continue stirring reaction 0.5~3 hour after returning to room temperature, obtain reactant mixture, the reaction dissolvent is
N-hexane, toluene, dichloromethane, tetrahydrofuran or ether；
(2) reactant mixture obtained step (1) filters, and collects filter cake, obtains lithium salts solid, by lithium salts solid with it is organic molten
Agent mixes, and the mass ratio of lithium salts solid and organic solvent is 1:10~20, obtain lithium salt solution, the organic solvent for just oneself
Alkane, toluene, dichloromethane, tetrahydrofuran or ether；
(3) at -78~0 DEG C according to lithium salts and (CH3)SiH2Cl mol ratios 1~4:1, (CH is added dropwise into above-mentioned lithium salt solution3)
SiH2Cl, is slowly increased to certain temperature, the temperature be room temperature to the reflux temperature of solvent for use, continue to stir at this temperature
Reaction 3~10 hours；
(4) reactant mixture that step (3) obtains is filtered, low temperature crystallization or be evaporated under reduced pressure to after filter vacuum concentration
To the radical silicide containing beta diimine of claim 1.
3. preparation method as claimed in claim 2, it is characterized in that：N-butyllithium solution described in step (1) is n-BuLi
Ether or hexane solution.
4. preparation method as claimed in claim 2, it is characterized in that：In the step (3), programming rate is 0.5~1 DEG C/minute
Clock.
5. preparation method as claimed in claim 2, it is characterized in that：The reactant mixture that the step (4) obtains is filtered,
After filtrate is concentrated, then low temperature crystallization is carried out, or be evaporated under reduced pressure and obtain described radical silicide containing beta diimine；The filter
Liquid concentration condition be：It is concentrated under reduced pressure at 20~50 DEG C, it is -0.1~-0.01MPa to concentrate or be evaporated under reduced pressure pressure.
6. radical silicide containing beta diimine is used as the application of integrated circuit thin-film material proplastid as claimed in claim 1, it is special
Sign is：By chemical vapor deposition (CVD) or ald (ALD) technique, silicon-containing film is prepared.
7. application as claimed in claim 6, it is characterized in that：The film be using compound as claimed in claim 1 with
One or more of reactions in ammonia, nitrous oxide, nitric oxide, oxygen, ozone, vapor are made.
8. application as claimed in claim 6, it is characterized in that：The film include silicon nitride, containing carbonitride of silicium, silicon oxynitride,
Carborundum, silica, the silicon oxynitride film of the silica of carbon doping and carbon doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410621227.8A CN104447838B (en) | 2014-11-06 | 2014-11-06 | A kind of beta diimine radical silicide and its application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410621227.8A CN104447838B (en) | 2014-11-06 | 2014-11-06 | A kind of beta diimine radical silicide and its application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104447838A CN104447838A (en) | 2015-03-25 |
| CN104447838B true CN104447838B (en) | 2017-12-29 |
Family
ID=52894651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410621227.8A Expired - Fee Related CN104447838B (en) | 2014-11-06 | 2014-11-06 | A kind of beta diimine radical silicide and its application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104447838B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014015241A1 (en) | 2012-07-20 | 2014-01-23 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications |
| TW201509799A (en) | 2013-07-19 | 2015-03-16 | Air Liquide | Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications |
| WO2016094711A2 (en) * | 2014-12-13 | 2016-06-16 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications and methods of using the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014015241A1 (en) * | 2012-07-20 | 2014-01-23 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications |
-
2014
- 2014-11-06 CN CN201410621227.8A patent/CN104447838B/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| Reactions of Lithium Silylcuprates with Pyrazolium and Indazolium Salts;Ana M. González-Nogal et al.;《Eur. J. Org. Chem.》;20071115;第2007卷(第36期);第6089页图1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104447838A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6456450B2 (en) | Novel cyclodisilazane derivative, production method thereof, and silicon-containing thin film using the same | |
| US9245740B2 (en) | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same | |
| JP6415665B2 (en) | Novel trisilylamine derivative, method for producing the same, and silicon-containing thin film using the same | |
| TW201509799A (en) | Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications | |
| KR102005940B1 (en) | Novel amino-silyl amine compound, method for manufacturing thereof and silicon-containing thin film use the same | |
| CN107002236A (en) | Amine precursor and its method for the carbon silane substituted that deposits the film containing Si | |
| CN104341447B (en) | A kind of silicon compound of amidino groups containing N and its application | |
| CN104447838B (en) | A kind of beta diimine radical silicide and its application | |
| TWI717598B (en) | Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same | |
| CN110536893B (en) | Disilanamine compounds, method of preparing the same, and silicon-containing thin film deposition composition including the same | |
| JP6651663B1 (en) | Aminosilane compound, composition for forming a silicon-containing film containing the aminosilane compound | |
| CN104447839B (en) | A kind of aminopyridine radical silicide and its application | |
| KR102186868B1 (en) | New silicon precursor compounds and method for fabricating silicon-containing thin film using the same | |
| TW202438506A (en) | Cyclodisilazane compound, composition for depositing silicon-containing thin film including the same, and method of manufacturing silicon-containing thin film using the same | |
| TW202031667A (en) | Bisalkylaminodisilazane compound, composition for forming silicon-containing film containing said bisalkylaminodisilazane compound | |
| KR20190046191A (en) | Silicone aminoamide imide compounds, preparation method thereof and process for the formation of thin film using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171229 |