CN104446440A - Anti-ferroelectric-relaxor-enhanced large-strain lead-free piezoelectric material and preparation method thereof - Google Patents
Anti-ferroelectric-relaxor-enhanced large-strain lead-free piezoelectric material and preparation method thereof Download PDFInfo
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- CN104446440A CN104446440A CN201410623344.8A CN201410623344A CN104446440A CN 104446440 A CN104446440 A CN 104446440A CN 201410623344 A CN201410623344 A CN 201410623344A CN 104446440 A CN104446440 A CN 104446440A
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Abstract
The invention discloses an anti-ferroelectric-relaxor-enhanced large-strain lead-free piezoelectric material and a preparation method thereof. The preparation method of the piezoelectric material comprises the following steps: respectively preparing powder of a compound A and a compound B by virtue of a conventional solid-phase synthesis process; weighting the powder of the compound A and the compound B at the ratio of the amount of substance of (0.5-2): 1, mixing the powder of the compound A and the compound B, carrying out ball milling for 4-12 hours by virtue of a zirconium oxide jar and milling balls under the condition that the ball-milling medium is absolute ethanol, finally drying, granulating and pressing into a green body; and carrying out conventional electronic ceramic firing process on the green body to prepare the anti-ferroelectric-relaxor-enhanced large-strain lead-free piezoelectric material, wherein the compound A is (1-x)Bi0.5Na0.5TiO3-xNa0.5K0.5TiO3, the compound B is(1-y) Bi0.5Na0.5TiO3-ySrTiO3, x is greater than 0.03 and less than 0.15 and y is greater than 0.03 and less than 0.7.
Description
Technical field
The present invention relates to a kind of antiferroelectric-the large sstrain leadless piezoelectric material material and preparation method thereof that strengthens of relaxation body, belong to field of electronic materials.
Background technology
Bismuth-sodium titanate base lead-free piezoelectric ceramic shows excellent electric field induced strain effect, is expected to replace lead base piezoelectric ceramics and is applied to electroluminescent micro positioner field.But bismuth sodium titanate based pottery has a larger shortcoming to be that driving voltage is too high, even if adopt the method for multivariate solid solution compound to be also difficult to reduce its driving voltage.
In bismuth sodium titanate based pottery, its huge electrostriction is mainly derived from strain [the C. Ma that electric field causes, X. Tan, E. Dul'kin, and M. Roth, Domain structure-dielectric property relationship in lead-free (1-x) (Bi
1/2na
1/2) TiO
3-xBaTiO
3ceramics, Journal of Applied Physics 108,104105 (2010)].Under electric field action, the polar phase that the nonpolar phase induction of a part cube or counterfeit cubic structure is tripartite or tetragonal, thus there is large electric field induced strain.In addition in the bismuth sodium titanate based pottery of tetragonal, sense of displacement due to Bi and Ti ion is antiparallel, easily cause antiferroelectric farmland to occur, reverse under the electric field action on antiferroelectric farmland and also can cause larger strain, but this kind of material often electrostriction is smaller.And in lead based relaxor body, although macroscopically the symmetry of material remains cubic structure, can not change by recurring structure under electric field action, but can produce large electrostriction.Electrostriction is the essential characteristic that all dielectric mediums all possess, and what just show in relaxation body is obvious.
Therefore can by structure one antiferroelectric and relaxation body " phase boundary " jointly strengthen the electric field induced strain effect of bismuth sodium titanate based pottery.(1-x) Bi
0.5na
0.5tiO
3-xNa
0.5k
0.5tiO
3antiferroelectric [A. B. Koung is shown as in 0.12>x>0.07 region, S. Zhang, W. Jo, T. Granzow, and J. R del, Morphotropic phase boundary in (1-x) Bi
0.5na
0.5tiO
3– xK
0.5na
0.5nbO
3lead-free piezoceramics, Applied Physics Letters 92,222902 (2008); ], and (1-x) Bi
0.5na
0.5tiO
3-xSrTiO
3show as unlimited solid solution, and all show relaxation body characteristics [W. Krauss, D. Sch ü tz, F. A. Mautner, A. Feteira, K. Reichmann, Piezoelectric properties and phase transition temperatures of the solid solution of (1 x) (Bi
0.5na
0.5) TiO
3– xSrTiO
3journal of the European Ceramic Society 30 (2010) 1827-1832].Therefore the large sstrain leadless piezoelectric material material being built antiferroelectric-relaxation body enhancing by these two kinds of compounds is expected to.
Summary of the invention
The object of this invention is to provide a kind of antiferroelectric-the large sstrain leadless piezoelectric material material and preparation method thereof that strengthens of relaxation body.
Of the present invention antiferroelectric-relaxation body strengthen large sstrain leadless piezoelectric material material be prepared from by traditional electronic ceramics sintering technology by antiferroelectric compd A and relaxation body compd B, wherein compd A is (1-x) Bi
0.5na
0.5tiO
3-xNa
0.5k
0.5tiO
3, compd B is (1-y) Bi
0.5na
0.5tiO
3-ySrTiO
3, and 0.15>x>0.03,0.7>y>0.03.
Prepare above-mentioned antiferroelectric-concrete steps of large sstrain leadless piezoelectric material material that relaxation body strengthens are:
(1) traditional process for solid phase synthesis is adopted to prepare the powder of compd A and compd B respectively.
(2) be that 0.5 ~ 2:1 takes the obtained compd A of step (1) and compd B powder according to amount of substance ratio, then powder mixed and use zirconium white jar and abrading-ball ball milling 4 ~ 12 hours under the condition of ball-milling medium for dehydrated alcohol, final drying, granulation suppress biscuit.
(3) biscuit obtained for step (2) is namely obtained the large sstrain leadless piezoelectric material material of antiferroelectric-relaxation body enhancing by traditional electronic ceramics sintering technology.
Described compd A is (1-x) Bi
0.5na
0.5tiO
3-xNa
0.5k
0.5tiO
3, compd B is (1-y) Bi
0.5na
0.5tiO
3-ySrTiO
3, and 0.15>x>0.03,0.7>y>0.03.
The invention provides a kind of novel method strengthening electric field induced strain, the method is simple to operate, and the electric field induced strain of obtained material has two portions to form---electric field-induced phase transition and electrostriction, contributed by counterfeit cube of antiferroelectric phase and relaxation body respectively.
Accompanying drawing explanation
Fig. 1 be the embodiment of the present invention 1 obtained antiferroelectric-the room temperature electric field induced strain figure of large sstrain leadless piezoelectric material material that strengthens of relaxation body, in figure, ordinate zou is electric field induced strain S, and X-coordinate is electric field strength E.
Fig. 2 be the embodiment of the present invention 2 obtained antiferroelectric-the room temperature electric field induced strain figure of large sstrain leadless piezoelectric material material that strengthens of relaxation body, in figure, ordinate zou is electric field induced strain S, and X-coordinate is electric field strength E.
Embodiment
embodiment 1:
(1) traditional process for solid phase synthesis is adopted to prepare 0.9Bi respectively
0.5na
0.5tiO
3-0.1Na
0.5k
0.5tiO
3(compd A) and 0.9Bi
0.5na
0.5tiO
3-0.1SrTiO
3the powder of (compd B).
(2) compare for 1:1.4 takes the obtained compd A of step (1) and compd B powder according to amount of substance, then powder mixed and use zirconium white jar and abrading-ball ball milling 8 hours under the condition of ball-milling medium for dehydrated alcohol, final drying, granulation suppress biscuit.
(3) biscuit obtained for step (2) is then incubated at 1150 DEG C the large sstrain leadless piezoelectric material material namely obtaining antiferroelectric-relaxation body and strengthen for 4 hours through binder removal operation.
By large sstrain leadless piezoelectric material material obtained for the present embodiment through surface finish and by silver-colored operation after carry out electric field induced strain test, Fig. 1 gives the graph of a relation of electric field and strain.
embodiment 2:
(1) traditional process for solid phase synthesis is adopted to prepare 0.94Bi respectively
0.5na
0.5tiO
3-0.06Na
0.5k
0.5tiO
3(compd A) and 0.5Bi
0.5na
0.5tiO
3-0.5SrTiO
3the powder of (compd B).
(2) compare for 2:1 takes the obtained compd A of step (1) and compd B powder according to amount of substance, then powder mixed and use zirconium white jar and abrading-ball ball milling 10 hours under the condition of ball-milling medium for dehydrated alcohol, final drying, granulation suppress biscuit.
(3) biscuit obtained for step (2) is then incubated at 1150 DEG C the large sstrain leadless piezoelectric material material namely obtaining antiferroelectric-relaxation body and strengthen for 6 hours through binder removal operation.
By large sstrain leadless piezoelectric material material obtained for the present embodiment through surface finish and by silver-colored operation after carry out electric field induced strain test, Fig. 2 gives the graph of a relation of electric field and strain.
Claims (2)
1. the large sstrain leadless piezoelectric material material of antiferroelectric-relaxation body enhancing, it is characterized in that the large sstrain leadless piezoelectric material material that this antiferroelectric-relaxation body strengthens is prepared from by traditional electronic ceramics sintering technology by antiferroelectric compd A and relaxation body compd B, wherein compd A is (1-x) Bi
0.5na
0.5tiO
3-xNa
0.5k
0.5tiO
3, compd B is (1-y) Bi
0.5na
0.5tiO
3-ySrTiO
3, and 0.15>x>0.03,0.7>y>0.03.
2. according to claim 1 antiferroelectric-preparation method of large sstrain leadless piezoelectric material material that strengthens of relaxation body, it is characterized in that concrete steps are:
(1) traditional process for solid phase synthesis is adopted to prepare the powder of compd A and compd B respectively;
(2) be that 0.5 ~ 2:1 takes the obtained compd A of step (1) and compd B powder according to amount of substance ratio, then powder mixed and use zirconium white jar and abrading-ball ball milling 4 ~ 12 hours under the condition of ball-milling medium for dehydrated alcohol, final drying, granulation suppress biscuit;
(3) biscuit obtained for step (2) is namely obtained the large sstrain leadless piezoelectric material material of antiferroelectric-relaxation body enhancing by traditional electronic ceramics sintering technology;
Described compd A is (1-x) Bi
0.5na
0.5tiO
3-xNa
0.5k
0.5tiO
3, compd B is (1-y) Bi
0.5na
0.5tiO
3-ySrTiO
3, and 0.15>x>0.03,0.7>y>0.03.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105198411A (en) * | 2015-09-30 | 2015-12-30 | 张海波 | Large-strain low-drive electric field relaxation and ferroelectric composite lead-free piezoelectric ceramic and preparation method thereof |
| CN111574792A (en) * | 2020-04-02 | 2020-08-25 | 杭州电子科技大学 | Preparation method of lead-free antiferroelectric and polymer blended dielectric material |
| CN112919907A (en) * | 2021-02-09 | 2021-06-08 | 杭州电子科技大学 | Lead-free ferroelectric ceramic material with enhanced energy storage efficiency and high energy storage capacity and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103159474A (en) * | 2013-02-25 | 2013-06-19 | 中国科学院上海硅酸盐研究所 | Antiferroelectric stored energy ceramic materials and ceramic element and preparation method |
-
2014
- 2014-11-09 CN CN201410623344.8A patent/CN104446440A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103159474A (en) * | 2013-02-25 | 2013-06-19 | 中国科学院上海硅酸盐研究所 | Antiferroelectric stored energy ceramic materials and ceramic element and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| FEIFEI WANG ET AL.: "Composition induced structure evolution and large strain response in ternary Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3-SrTiO3 solid solution", 《JOURNAL OF APPLIED PHYSICS》 * |
| WANGFENG BAI ET AL.: "Phase Diagrams and Electromechanical Strains in Lead-Free BNT-Based Ternary Perovskite Compounds", 《J. AM. CERAM. SOC.》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105198411A (en) * | 2015-09-30 | 2015-12-30 | 张海波 | Large-strain low-drive electric field relaxation and ferroelectric composite lead-free piezoelectric ceramic and preparation method thereof |
| CN111574792A (en) * | 2020-04-02 | 2020-08-25 | 杭州电子科技大学 | Preparation method of lead-free antiferroelectric and polymer blended dielectric material |
| CN112919907A (en) * | 2021-02-09 | 2021-06-08 | 杭州电子科技大学 | Lead-free ferroelectric ceramic material with enhanced energy storage efficiency and high energy storage capacity and preparation method thereof |
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