CN104425354A - Method for manufacturing shallow trench isolation structure - Google Patents
Method for manufacturing shallow trench isolation structure Download PDFInfo
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- CN104425354A CN104425354A CN201310365668.1A CN201310365668A CN104425354A CN 104425354 A CN104425354 A CN 104425354A CN 201310365668 A CN201310365668 A CN 201310365668A CN 104425354 A CN104425354 A CN 104425354A
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- isolation structure
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- fleet plough
- oxide layer
- plough groove
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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Abstract
The invention provides a method for manufacturing a shallow trench isolation structure, comprising the steps of providing a substrate, sequentially forming a pad oxide layer and a silicon nitride layer on the substrate, etching the pad oxide layer, the silicon nitride layer and the substrate to form a trench, forming an oxide layer in the trench, removing the silicon nitride layer, performing ion implantation on the surface of the oxide layer, and removing the surface of the oxide layer. According to the method for manufacturing a shallow trench isolation structure provided by the invention, the surface of the oxide layer on the substrate is removed through ion implantation and a removal process, so that the top spacing of the shallow trench isolation structure is increased, the opening filled with polysilicon is expanded, the deposition effect of a subsequent polysilicon layer is improved, and voids in a gate are avoided.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of manufacture method of fleet plough groove isolation structure.
Background technology
Along with the development of semiconductor fabrication, shallow trench isolation technology (Shallow Trench Isolation, STI) is good owing to having isolation effect, the advantages such as area occupied is little, has become the main method of semiconductor device isolation.
Please refer to Fig. 1, it is the structural representation of the fleet plough groove isolation structure of prior art.As shown in Figure 1, the manufacture method of existing fleet plough groove isolation structure comprises:
Step 1 a: substrate 10 is provided;
Step 2: form pad oxide 11 and silicon nitride layer (not shown) successively over the substrate;
Step 3: etch nitride silicon layer, pad oxide 11 and substrate 10 form groove 12;
Step 4: deposition oxide 13 in described silicon nitride layer and groove 12;
Step 5: cmp is carried out to exposing silicon nitride layer to described oxide 13;
Step 6: remove silicon nitride layer 12 and form fleet plough groove isolation structure.
Because the critical size of semiconductor fabrication process is more and more less, the difficulty of thin film deposition also constantly increases, can deposit better to make oxide enters in groove 12, generally can expand the size at groove top, therefore the fleet plough groove isolation structure the formed feature that usually concrete bottom is little, top is large, shape and back taper similar.
After shallow ditch groove separation process completes, then form grid at the deposited on substrates polysilicon layer 14 of fleet plough groove isolation structure.As shown in Figure 1, polysilicon layer 14 is filled between fleet plough groove isolation structure, because the shape between fleet plough groove isolation structure is just contrary with the shape of fleet plough groove isolation structure, that large top, bottom is little, so, polysilicon can not deposit well and enter between fleet plough groove isolation structure, and the polysilicon layer 14 of formation easily occurs cavity 15 and causes performance of semiconductor device to decline.Visible, fleet plough groove isolation structure feature of the prior art have impact on the deposition of follow-up polysilicon layer 14, easily makes grid occur cavity 15.
Therefore, the problem in cavity has become the technical problem that those skilled in the art need solution badly how to avoid causing grid to occur because of fleet plough groove isolation structure.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of fleet plough groove isolation structure, to avoid causing grid to occur the problem in cavity because of existing fleet plough groove isolation structure.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of fleet plough groove isolation structure, the manufacture method of described fleet plough groove isolation structure comprises the following steps:
One substrate is provided;
Form pad oxide and silicon nitride layer successively over the substrate;
Etch described pad oxide, silicon nitride layer becomes groove with substrate-like;
Oxide layer is formed in described groove;
Remove described silicon nitride layer;
Ion implantation is performed to the top layer of described oxide layer;
Remove the top layer of described oxide layer.
Preferably, in the manufacture method of described fleet plough groove isolation structure, described oxide layer is formed by chemical vapor deposition method.
Preferably, in the manufacture method of described fleet plough groove isolation structure, described groove is formed by plasma etch process.
Preferably, in the manufacture method of described fleet plough groove isolation structure, before removing silicon nitride layer, after filling oxide layer, also comprise: by the surface of oxide layer described in chemical mechanical milling tech planarization.
Preferably, in the manufacture method of described fleet plough groove isolation structure, described silicon nitride layer is removed by wet clean process.
Preferably, in the manufacture method of described fleet plough groove isolation structure, the material of described pad oxide and oxide layer is silicon dioxide.
Preferably, in the manufacture method of described fleet plough groove isolation structure, the top layer of described oxide layer comprises the end face of described oxide layer and the sidewall be positioned at above described substrate.
Preferably, in the manufacture method of described fleet plough groove isolation structure, the top layer of described oxide layer is removed by wet-etching technology.
Preferably, in the manufacture method of described fleet plough groove isolation structure, the ion adopted in described ion implantation is boron ion or fluorine ion.
In the manufacture method of fleet plough groove isolation structure provided by the invention, the top layer of the oxide above substrate is eliminated by ion implantation and removal technique, the spacing at top in fleet plough groove isolation structure is increased, thus expand the opening of polysilicon filling, improve the deposition effect of follow-up polysilicon layer, avoid grid to occur cavity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the fleet plough groove isolation structure of prior art;
Fig. 2 is the flow chart of the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention;
Fig. 3 is the structural representation of the device of step S12 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention;
Fig. 4 is the structural representation in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention, oxide layer being performed to the device after cmp;
Fig. 5 is the structural representation of the device of step S14 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention;
Fig. 6 is the structural representation of the device of step S15 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention;
Fig. 7 is the structural representation of the device of step S16 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention;
Fig. 8 is the structural representation of the fleet plough groove isolation structure of the embodiment of the present invention.
Embodiment
Be described in further detail below in conjunction with the manufacture method of the drawings and specific embodiments to the fleet plough groove isolation structure that the present invention proposes.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 2, it is the flow chart of the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention.As shown in Figure 2, the manufacture method of described fleet plough groove isolation structure comprises the following steps:
S10 a: substrate 20 is provided;
S11: form pad oxide 21 and silicon nitride layer 22 on described substrate 20 successively;
S12: etch described silicon nitride layer 22, pad oxide 21 and substrate 20 and form groove 23;
S13: form oxide layer 24 at described groove 23;
S14: remove described silicon nitride layer 22;
S15: ion implantation is performed to the top layer 25 of described oxide layer;
S16: the top layer 25 of removing described oxide layer.
Concrete, first, provide substrate 20, described substrate can be the silicon (SOI) etc. on N-type substrate, P type substrate, insulating barrier.
Then, described substrate 20 forms pad oxide 21 and silicon nitride layer 22 successively.The material of described pad oxide 21 adopts silicon dioxide, and the technique forming pad oxide 21 can adopt thermal oxidation technology.The silicon nitride layer 22 that described pad oxide 21 is follow-up formation provides resilient coating, simultaneously can as the etching stop layer of subsequent etching silicon nitride layer 22.Described silicon nitride layer 22 is used as the stop-layer of subsequent chemical mechanical grinding technics, and the technique forming silicon nitride layer 22 can adopt existing chemical vapor deposition method.
Then, etch described silicon nitride layer 22, pad oxide 21 and substrate 20 and form groove 23.In the process, first etch nitride silicon layer 22, pad oxide 21 form groove opening to expose the surface of substrate 20, etch the surface of the substrate 20 that described groove opening exposes afterwards until the degree of depth of requirement, continue the sidewall of further etch nitride silicon layer 22 and pad oxide 21 to expand the size at groove 23 top.The formation process of described groove 23 can adopt existing plasma etch process.
Please refer to Fig. 3, it is the structural representation of the device of step S12 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention.As shown in Figure 3, in groove 23, a part is on substrate 20, and another part is below substrate 20, and the groove 23 above substrate 20 is groove top, and the groove 23 below substrate 20 is channel bottom, and namely the size at groove top is larger than the size of channel bottom.Visible, the bottom of groove 23 is little, top is large, similar back taper, and this structure can make oxide to deposit better to enter in groove 23.
Afterwards, in described groove 23 fill oxide to form oxide layer 24.The material of described oxide layer 24 can adopt silicon dioxide, and the technique forming oxide layer 24 can adopt chemical vapor deposition method.In chemical vapor deposition processes, described oxide layer 24 also covers above described silicon nitride layer 22 while filling up described groove 23.After formation oxide layer 24, utilize chemical mechanical milling tech to carry out planarization, remove unnecessary oxide layer 24 until expose silicon nitride layer 22.
Please refer to Fig. 4, it is the structural representation in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention, oxide layer being performed to the device after cmp.As shown in Figure 4, cmp eliminates unnecessary oxide layer 24 and exposes silicon nitride layer 22, and oxide layer 24 fills up described groove 23.
Then, remove technique by wet method and remove described silicon nitride layer 22.Please refer to Fig. 5, it is the structural representation of the device of step S14 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention.As shown in Figure 5, after removing silicon nitride layer 22, the oxide layer 24 above substrate comes out completely, comprises end face 31 and the partial sidewall 41 of oxide layer 24, and wherein, described partial sidewall 41 is positioned at above substrate 20.
Then, perform ion implantation to the oxide layer 24 at groove top, the scope of ion implantation is the top layer 25 of oxide.The top layer 25 of oxide layer comprises end face 31 and the partial sidewall 41 of oxide layer 24, and the top layer 25 of oxide layer has certain thickness, and for the top layer 25 of the oxide layer of diverse location, its thickness can difference to some extent, and the scope of thickness is generally between 10 dusts to 100 dusts.Please refer to Fig. 6, it is the structural representation of the device of step S15 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention.As shown in Figure 6, ion implantation is carried out to the top layer 25 of oxide layer, the ion adopted can be boron ion (B), fluorine ion (F) or other ions, after the top layer 25 of oxide layer is subject to ion implantation, structure changes, structure becomes loose, and its etching rate is faster than the oxide layer 24 not being subject to ion implantation.
Finally, removed the top layer 25 of oxide layer by wet-etching technology, form fleet plough groove isolation structure.Please refer to Fig. 7, it is the structural representation of the device of step S16 in the manufacture method of the fleet plough groove isolation structure of the embodiment of the present invention.As shown in Figure 7, oxide layer 24 defines new end face 32 and partial sidewall 42 after eliminating the top layer 25 of oxide layer.In the fleet plough groove isolation structure formed, a part is positioned at above substrate 20, and another part is positioned at below substrate 20, and the fleet plough groove isolation structure be positioned at above substrate 20 is the top of fleet plough groove isolation structure.
Wherein, the size at the top of fleet plough groove isolation structure can be adjusted by the concentration of ion implantation.The concentration of ion implantation is higher, and the thickness being subject to the top layer 25 of the oxide layer of ion implantation is thicker, and the top of the fleet plough groove isolation structure formed after wet-etching technology is less; Otherwise the concentration of ion implantation is lower, the thickness being subject to the top layer 25 of the oxide layer of ion implantation is thinner, and the top of the fleet plough groove isolation structure formed after wet-etching technology is larger.And the shape of angle on the top of fleet plough groove isolation structure of ion implantation also has impact.Therefore, the shape at the top of fleet plough groove isolation structure and size can be adjusted by the concentration of ion implantation and angle.Such as flash memory (Flash), the top of its fleet plough groove isolation structure is adjusted to end face 32 and the orthogonal shape of sidewall 42 by concentration and angle generally by adjusting ion implantation.
Technological process traditionally, continues deposition of polysilicon layer 26 to form grid after forming fleet plough groove isolation structure on the substrate forming fleet plough groove isolation structure.Please refer to Fig. 8, it is the structural representation of the fleet plough groove isolation structure of the embodiment of the present invention.As shown in Figure 8, the opening that polysilicon is filled is defined between the top of fleet plough groove isolation structure, because the gap ratio at the top of fleet plough groove isolation structure is larger, polysilicon successfully can deposit the space entered between fleet plough groove isolation structure and form polysilicon layer 26, and polysilicon layer 26 substantially there will not be cavity in deposition process.
The manufacture method of the fleet plough groove isolation structure provided according to the embodiment of the present invention, after removing silicon nitride layer 22, between oxide layer 24 above substrate i.e. fleet plough groove isolation structure top between space define the opening of follow-up filling polysilicon, the opening that shape due to groove 23 causes polysilicon to fill is smaller, position particularly near end face 31 in described opening is minimum, is unfavorable for that polysilicon deposition enters in described opening.Depositing better to enable polysilicon enters in described opening, changed the etching rate on the top layer 25 of oxide layer by the mode of ion implantation in subsequent technique, and adopt wet etching to eliminate oxide surface layer 25, thus expand the opening for filling polysilicon.
To sum up, in the manufacture method of the fleet plough groove isolation structure provided in the embodiment of the present invention, by performing ion implantation and wet method removal technique to the top of the oxide layer be filled in groove, thus increase the spacing at top in fleet plough groove isolation structure, expand the opening of filling polysilicon.Thus, improve the deposition effect of follow-up polysilicon layer, avoid grid to occur cavity.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (9)
1. a manufacture method for fleet plough groove isolation structure, is characterized in that, comprising:
One substrate is provided;
Form pad oxide and silicon nitride layer successively over the substrate;
Etch described pad oxide, silicon nitride layer becomes groove with substrate-like;
Oxide layer is formed in described groove;
Remove described silicon nitride layer;
Ion implantation is performed to the top layer of described oxide layer;
Remove the top layer of described oxide layer.
2. the manufacture method of fleet plough groove isolation structure as claimed in claim 1, it is characterized in that, described oxide layer is formed by chemical vapor deposition method.
3. the manufacture method of fleet plough groove isolation structure as claimed in claim 1, it is characterized in that, described groove is formed by plasma etch process.
4. the manufacture method of fleet plough groove isolation structure as claimed in claim 1, is characterized in that, before removing silicon nitride layer, after filling oxide layer, also comprises: by the surface of oxide layer described in chemical mechanical milling tech planarization.
5. the manufacture method of fleet plough groove isolation structure as claimed in claim 1, it is characterized in that, described silicon nitride layer is removed by wet clean process.
6. the manufacture method of fleet plough groove isolation structure as claimed in claim 1, it is characterized in that, the material of described pad oxide and oxide layer is silicon dioxide.
7. the manufacture method of fleet plough groove isolation structure as claimed in claim 6, is characterized in that, the top layer of described oxide layer comprises the end face of described oxide layer and the sidewall be positioned at above described substrate.
8. the manufacture method of fleet plough groove isolation structure as claimed in claim 7, it is characterized in that, the top layer of described oxide layer is removed by wet-etching technology.
9. the manufacture method of fleet plough groove isolation structure as claimed in claim 1, it is characterized in that, the ion adopted in described ion implantation is boron ion or fluorine ion.
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| CN201310365668.1A CN104425354A (en) | 2013-08-20 | 2013-08-20 | Method for manufacturing shallow trench isolation structure |
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| CN201310365668.1A CN104425354A (en) | 2013-08-20 | 2013-08-20 | Method for manufacturing shallow trench isolation structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112018121A (en) * | 2020-09-01 | 2020-12-01 | 长江存储科技有限责任公司 | Semiconductor device and method for manufacturing the same |
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| US20010028922A1 (en) * | 1995-06-07 | 2001-10-11 | Sandhu Gurtej S. | High throughput ILD fill process for high aspect ratio gap fill |
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| US6812115B2 (en) * | 2002-07-26 | 2004-11-02 | Advanced Micro Devices, Inc. | Method of filling an opening in a material layer with an insulating material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112018121A (en) * | 2020-09-01 | 2020-12-01 | 长江存储科技有限责任公司 | Semiconductor device and method for manufacturing the same |
| CN112018121B (en) * | 2020-09-01 | 2023-10-24 | 长江存储科技有限责任公司 | Semiconductor device and method for manufacturing the same |
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Application publication date: 20150318 |