CN104423140B

CN104423140B - The manufacturing method of photomask, the manufacturing method of display device and drawing apparatus

Info

Publication number: CN104423140B
Application number: CN201410411893.9A
Authority: CN
Inventors: 剑持大介
Original assignee: Hoya Corp
Current assignee: Hoya Corp
Priority date: 2013-08-20
Filing date: 2014-08-20
Publication date: 2019-08-02
Anticipated expiration: 2034-08-20
Also published as: JP2015062054A; TW201514615A; CN110058488A; CN104423140A; KR20150021453A; TWI547754B; CN110058488B; KR101649035B1; JP5970021B2

Abstract

Manufacturing method, the manufacturing method of display device and the drawing apparatus of photomask are provided, can be improved the coordinate precision for the pattern being formed on transfer printing body.The manufacturing method of photomask of the invention is with the following process: preparing pattern design data (A)；Obtain indicate due to photomask is remained to the deflection of main surface caused by exposure device and be in addition to self weight bend ingredient other than deflection transfer surface amendment data (D)；Height distributed data (E) when obtaining the description for indicating in the state that photomask blank has been placed on the workbench of drawing apparatus, main surface height distribution；Height distributed data (E) and the difference of transfer surface amendment data (D), which obtain, when passing through description describes differential data (F)；And grid deviation amount corresponding with differential data (F) is described is calculated, find out description grid deviation amount data (G).

Description

The manufacturing method of photomask, the manufacturing method of display device and drawing apparatus

Technical field

The present invention relates to the photomasks for semiconductor device and the manufacture of display device (LCD, organic EL etc.), and are related to Its manufacturing method and apparatus, inspection method and device.

Background technique

It is expected that improving the precision for forming transfer pattern on the photomask, and then improve the inspection for being formed by transfer pattern Look into precision.

It describes and can be transferred by optical mask pattern in patent document 1 (Japanese Unexamined Patent Publication 2010-134433 bulletin) When on to transfer printing body, plotting method, the drawing apparatus of its coordinate precision are improved.In particular, in photomask manufacturing process, by It is different when the shape of film surface (pattern forming face) when describing transfer pattern is from exposure, and can not be formed on transfer printing body According to the pattern of design, in order to eliminate the problem, the method described the data after being corrected is described.

[patent document 1] Japanese Unexamined Patent Publication 2010-134433 bulletin

In the manufacture of display device, mostly using the light with the transfer pattern based on the device design gone for Mask.As device, using smart phone and tablet terminal as in representative, liquid crystal display device and organic EL display device, It is required that bright economize on electricity, quick action, and require the graceful image of high resolution.Therefore, for the light for being used for such use Mask is clearly present new technical task for inventor.

Subtle image is showed for clarity, needs to improve pixel density, at present, it is desirable to realize that pixel density is 400ppi (pixel per inch: per inch pixel) or the device above herein.Therefore, the transfer pattern of photomask Direction of the design in imperceptibility, densification.In addition, by the stacking for the multiple layers (Layer) for being formed with fine pattern come Three-dimensionally form multiple electronic devices comprising display device.Therefore, the raising of the coordinate precision in this multiple layer, Yi Jixiang Mutual coordinate matching becomes particularly significant.That is, can draw if each layer of patterns coordinate precision does not meet regulation grade all It rises and does not generate the unfavorable condition appropriately acted in the device completed.Therefore, the permission model of grid deviation required by each layer It encloses in the direction increasingly reduced.

In addition, describing following technology according to patent document 1: calculating the film surface shape in the description process of photomask blank The shape change amount between film surface shape when shape and exposure, and according to calculated shape change amount, it is set to for description Meter, which describes the data, to be corrected.Following methods are recorded in the publication: in the stage for describing transfer pattern, distinguishing substrate Film surface (refers to the face of film forming side in transparent substrate, refers to that the face of film that is formed with, finger is formed in photomask in photomask blank Figuratum face.) relative to ideal plane deformation will it is because in, still remaining in exposure will be because and disappearing when exposure It will be because of describing the data after being corrected.

Through drawing apparatus in depicting pattern in the photomask blank with photoresist, photomask blank is so that film surface court On state be positioned on the workbench of drawing apparatus.At this point, for photomask blank film surface surface shape relative to The deformation of ideal plane will be because, it is believed that there are it is following will be because:

(1) insufficient flatness of workbench,

(2) flexure of substrate caused by the foreign matter on workbench sandwiches,

(3) bumps of photomask blank film surface,

(4) film surface due to caused by the bumps at the photomask blank back side deforms.

Therefore, accumulate above-mentioned 4 will thus form the surface shape of photomask blank under the state.Then, to this The photomask blank of state is described.

On the other hand, photomask is when being equipped to exposure device, by make film surface downward, only support photomask peripheral part And it is fixed.By form resist film transfer printing body (after being transferred pattern, by etch etc. processed, therefore Referred to as it is processed body) it is configured to the lower section of photomask, from top (from back side) irradiation exposure light of photomask.Under the state, Above-mentioned 4 deformations will (1) workbench because in insufficient flatness and caused by (2) sandwich because of the foreign matter on workbench Substrate flexure disappears.In addition, the back side for (4) substrate is concave-convex, it can still remain in this state, still, pattern be not formed The surface shape at the back side transfer of surface (pattern forming face) is not influenced.On the other hand, photomask is in exposure device When being used still can remaining deformation will be because being above-mentioned (3).

That is, the deformation of (1), (2), (4) will disappear because existing when describing in exposure.Due to the variation, it can generate and retouch Grid deviation when drawing and when exposure.Therefore, if for above-mentioned (1), (2), (4) be will because, surface shape is relative to reason Think the variable quantity of plane, correction design describes the data and as describing the data, without make (3) be will because surface shape variable quantity Reflect in above-mentioned correction, then can obtain the photomask of the transfer performance with more accurate coordinate design data.

Therefore, according to the method for patent document 1, it can be improved the coordinate precision for the pattern being formed on transfer printing body.

In addition, as shape when describing to photomask blank and when photomask is carried to exposure device, substrate film surface There is the flexure ingredient based on substrate self weight in variation.Photomask blank in drawing apparatus is placed in workbench, and posture takes Certainly in the shape of workbench, on the other hand, the photomask for being equipped on the state of exposure device is bent due to self weight, film surface Shape is quite big relative to the deformation of ideal plane.If providing physics value as caused by the size and material of substrate etc., base It can be easier in the deformation of film surface shape of such self weight flexure and the departure of each coordinate position based on the deformation Ground is calculated.Therefore, exposure device used in the manufacture of display device mask, which usually has, bends ingredient by the self weight Caused by grid deviation calibration function, big multipair self weight, which is bent after ingredient compensates, to be described.Therefore, in patent text Offer the describing the data in correction of 1 method, it may not be necessary to the step of reflecting the self weight flexure ingredient of substrate.

But the photomask in exposure device is not only to be bent by simple self weight, and near substrate periphery In holding area, is kept by the holding member of exposure device, constrained in the being forced property of part.In this case, since light is covered The deformation of film surface caused by the power that mould is subject in the part contacted with holding member also has shadow to figuratum region is formed It rings, consequently, it is possible to deteriorating its coordinate precision.The inventors discovered that considering the figure in display device developed at present etc. It is meaningful also to investigate such subtle effects for the imperceptibility of case and highly integrated.

For example, the film after the devices such as display device form pattern is laminated and is formed, still, each layer being laminated is The transfer having by each different photomask pattern is formed.Certainly, used each photomask is according to stringent Qualitative control produce.But since each mask is different, just it is difficult to make all complete reasons of the flatness on its surface Think plane, but also is difficult to make its film surface shape completely the same in multiple photomasks.

Therefore, in each photomask, there are individual differences for film surface shape, if it is considered that this each photomask is due to exposing Holding in electro-optical device and the case where be deformed, and consider these will because the correction described the data, then being capable of shape At the higher transfer pattern of coordinate precision.

Although that is, present inventor have discovered that by the method for patent document 1, when preventing due to describing with film when exposure The aspect of the deterioration of coordinate precision caused by the posture difference of face can obtain significant precision and improve, still, in order to further mention In high precision, and the yield rate with the device of multilayer is improved, following methods are beneficial: also considering the light used in layers and cover The minor individual difference of the film surface shape of mould substrate and they in exposure device by retentivity bring influenced, and Substance eliminates the deterioration of the influence bring transferability.

Summary of the invention

Therefore, the purpose of the present invention is to provide a kind of coordinate precisions of pattern that can be improved and be formed on transfer printing body The manufacturing method of photomask, drawing apparatus, the inspection method of photomask, the system of the check device of photomask and display device Make method.

To solve the above-mentioned problems, the present invention has following structure.

(structure 1)

A kind of manufacturing method of photomask includes following process: preparation is formed with film and light on the major surface of the substrate The photomask blank of resist film, and defined transfer pattern is described by drawing apparatus, wherein the manufacture of the photomask Method includes

According to the design of the defined transfer pattern, prepare the process of pattern design data A；

The process for obtaining transfer surface amendment data D, the transfer surface are corrected data D and are indicated due to remaining to the photomask The deflection of the main surface caused by exposure device and be in addition to self weight bend ingredient other than the main surface deformation Amount；

The process for obtaining height distributed data E when describing, height distributed data E is indicated at the main surface when description Main table in the state of on the workbench that the photomask blank has been placed on the drawing apparatus by the mode of upside, described The height in face is distributed；

It is obtained by the difference that height distributed data E when the description and the transfer surface correct data D and describes difference number According to the process of F；

The grid deviation amount at multiple points in main surface corresponding with the description differential data F, described is calculated, thus The process for finding out description grid deviation amount data G；And

Describe process to cover using the description grid deviation amount data G and the pattern design data A in the light Described on die body.

(structure 2)

Prepare the process of pattern design data A according to the design of the defined transfer pattern；

The process that surface shape by measuring the main surface obtains substrate surface shape data B；

When the photomask is maintained in exposure device, determines be kept the more of component holding on said principal surface A holding point will be produced by the surface shape when shifting the multiple holding point according to the shape of the holding member Displacement reflect into the substrate surface shape data B, thus obtain transfer face shape data C process；

The substrate is removed from the transfer face shape data C to be scratched by the self weight in posture that the holding member is kept Qu Chengfen, thus the process for obtaining transfer surface amendment data D；

In the work that the photomask blank has been placed on to the drawing apparatus in such a way that the main surface is in upside In the state of making on platform, the height distribution of the main surface is measured, thus the process for obtaining height distributed data E when description；

(structure 3)

According to the manufacturing method of photomask described in structure 2, which is characterized in that finding out the transfer face shape data C Process in, use FInite Element.

(structure 4)

According to the manufacturing method of photomask described in any one in structure 1~3, which is characterized in that in the description In process, described using correcting pattern data H, the correcting pattern data H is by inclined according to the description coordinate Differential data G is corrected the pattern design data A and obtains.

(structure 5)

According to the manufacturing method of photomask described in any one in structure 1~3, which is characterized in that in the description In process, according to the description with grid deviation amount data G, the coordinate system having to the drawing apparatus is corrected, and is used Calibration coordinate system obtained and the pattern design data A are described.

(structure 6)

According to the manufacturing method of photomask described in any one in structure 1~5, which is characterized in that by the light When mask is maintained in exposure device, multiple holding points configuration of component holding will be kept in the plane.

(structure 7)

According to the manufacturing method of photomask described in any one in structure 1~6, which is characterized in that the substrate table Face shape data B is by the photomask blank or to be used to remain main surface lead as the substrate of the photomask blank In the state of straight, what the position by measuring multiple measurement points in the main surface was found out.

(structure 8)

A kind of drawing apparatus is used for the photo blanks for being formed with film and optical resist film on the major surface of the substrate Body describes transfer pattern, wherein the drawing apparatus includes

The photomask blank is being placed on work in such a way that the main surface is in upside by height measurement unit In the state of making on platform, the height distribution of the main surface is measured, height distributed data E when describing is obtained；

Input unit inputs the pattern design data A of the transfer pattern, indicates the main surface shape of the substrate Substrate surface shape data B, information relevant to the hold mode when substrate to be remained to exposure device and comprising institute State the substrate physical property infomation of the physics value of baseplate material；

Arithmetic element uses the substrate surface shape data B, information relevant to the hold mode and the base Plate physical property infomation, operation transfer surface correct data D, and height distributed data E is repaired with the transfer surface when finding out the description The difference of correction data D, so that operation is corresponding with obtained difference, the description coordinate at multiple points in the main surface Departure data G, wherein transfer surface amendment data D is the substrate for indicating the state being maintained in exposure device The data of main surface shape, and be the data after removal self weight flexure ingredient；And

Delineation unit uses the description grid deviation amount data G and the pattern design data A, in the light Described on mask blank.

(structure 9)

A kind of inspection method of photomask checks photomask using check device, master of the photomask in substrate Have on surface and transfer pattern made of pattern formation is carried out to film, wherein the inspection method of the photomask includes

In the state that the photomask has been placed on the workbench of the check device, carry out being formed in the master The measurement of coordinates of pattern on surface, thus the process for obtaining patterns coordinate data L；

In the workbench that the photomask has been placed on to the check device in such a way that the main surface is in upside In the state of upper, the height distribution of the main surface is measured, thus the process for obtaining height distributed data I when inspection；

The difference of height distributed data I and transfer surface amendment data D, it is poor to obtain inspection when by finding out the inspection The process of divided data J；

The grid deviation amount at multiple points in main surface corresponding with the inspection differential data J, described is calculated, thus The process for finding out inspection grid deviation amount data K；And

Using the inspection grid deviation amount data K and the patterns coordinate data L, the transfer pattern is carried out The process of inspection.

(structure 10)

When the photomask to be maintained in exposure device, determines be kept the more of component holding on said principal surface A holding point will be produced by the surface shape when shifting the multiple holding point according to the shape of the holding member Displacement reflect into the substrate surface shape data B, thus obtain transfer face shape data C process；

(structure 11)

According to the inspection method of photomask described in structure 10, which is characterized in that finding out the transfer face shape data C Process in, use FInite Element.

(structure 12)

According to the inspection method of photomask described in any one in structure 9~11, which is characterized in that by the inspection With grid deviation amount data K reflection into pattern design data A, and use correction design data M obtained and the pattern Coordinate data L carries out the inspection of the transfer pattern.

(structure 13)

According to the inspection method of photomask described in any one in structure 9~11, which is characterized in that by the inspection With grid deviation amount data K reflection into the patterns coordinate data L, and use calibration coordinate data N obtained and pattern Design data A carries out the inspection of the transfer pattern.

(structure 14)

A kind of manufacturing method of photomask, by the photo blanks for being formed with film and optical resist film in main surface The film of body carries out pattern formation and forms photomask, and the manufacturing method of the photomask is characterized in that,

Inspection method comprising photomask described in any one in structure 9~13.

(structure 15)

A kind of manufacturing method of display device in main surface, comprising the following steps: by being formed with transfer pattern Photomask be exposed, to machined layer device substrate carry out pattern transfer, the manufacturing method of the display device It is characterized in that,

Use the photomask produced by manufacturing method described in any one in structure 1~7.

(structure 16)

A kind of manufacturing method of display device using transfer is formed in respective main surface, comprising the following steps: used The multiple photomasks and exposure device of pattern successively carry out pattern transfer to the multiple machined layers being formed on device substrate, The manufacturing method of the display device is characterized in that,

The multiple photomask is produced by manufacturing method described in any one in structure 1~7.

(structure 17)

A kind of check device of photomask checks photomask, which has on the major surface of the substrate Transfer pattern made of pattern formation is carried out to film, wherein the check device of the photomask includes

Measurement of coordinates unit is formed the measurement of coordinates of pattern on said principal surface, obtains patterns coordinate number According to L；

The photomask is being placed on workbench in such a way that the main surface is in upside by height measurement unit In the state of upper, the height distribution of the main surface is measured, height distributed data I when checking is obtained；

Input unit, input indicate the main surface shape of the substrate substrate surface shape data B, with by the base The relevant information of hold mode when plate remains to exposure device and the substrate physical property of the physics value comprising the baseplate material are believed Breath；

Arithmetic element uses the substrate surface shape data B, information relevant to the hold mode and the base Plate physical property infomation, operation transfer surface correct data D, and height distributed data I is repaired with the transfer surface when finding out the inspection The difference of correction data D, so that operation is corresponding with obtained difference, the inspection coordinate at multiple points in the main surface Departure data K, wherein transfer surface amendment data D indicates the master of the substrate for the state being maintained in exposure device Surface shape and be removal self weight flexure ingredient after main surface shape；And

Inspection unit uses the inspection grid deviation amount data K and pattern design data A, checks that the light is covered The transfer pattern of mould.

In accordance with the invention it is possible to which the light for providing a kind of coordinate precision of pattern that can be improved and be formed on transfer printing body is covered The manufacturing method of mould, drawing apparatus, the inspection method of photomask, the check device of photomask and display device manufacturer Method.

Detailed description of the invention

(a) of Fig. 1 is the side view for being maintained as the vertical substrate of main surface, and (b) of Fig. 1 is the main view of the substrate.

(a) of Fig. 2 is the cross-sectional view for setting the substrate of multiple measurement points, and (b) of Fig. 2 is the main view of the substrate.

(a) of Fig. 3 is the cross-sectional view of mask model used in FInite Element, and (b) of Fig. 3 is the main view of the mask model Figure.

(a) of Fig. 4 is the cross-sectional view of the mask model configured in such a way that film surface is in upside, and (b) of Fig. 4 is with film surface The cross-sectional view for the mask model that mode in downside configures, (c) of Fig. 4 are the masks configured in such a way that film surface is in upside The main view of model, (d) of Fig. 4 are the main views of the mask model configured in such a way that film surface is in downside.

(a) of Fig. 5 is to maintain the cross-sectional view of the mask model at the holding position of component.(b) of Fig. 5 is mask model Main view illustrates with dashed lines the holding position of holding member.

Fig. 6 is the hexahedral schematic diagram for constituting mask model.

Fig. 7 is shown after obtaining transfer face shape data C according to substrate surface shape data B, to by from transfer Removal self weight flexure ingredient in face shape data C, obtains the schematic diagram of the process until transfer surface corrects data D.

Fig. 8 is the concept map of drawing apparatus used in the photo mask manufacturing method of embodiment.

Fig. 9 be show according to describe when height distributed data E and transfer surface amendment data D difference obtain describe it is poor After divided data F, to according to the schematic diagram for describing differential data F acquisition process of the description until grid deviation amount data G.

Figure 10 be for calculate the shape of film surface change and thus caused by relationship between grid deviation schematic diagram.

Figure 11 is to show the difference of height distributed data I and transfer surface amendment data D when according to checking to be checked After differential data J, to according to the schematic diagram for checking differential data J acquisition process of the inspection until grid deviation amount data K.

(a), (c) of Figure 12 shows the coordinate measurement for the pattern being formed on test photomask.Figure 12's (b), (d) shows the knot after emulating to the grid deviation in the state that test is arranged to exposure device with photomask Fruit.

Pattern caused by the main surface shape difference of photomask when Figure 13 is for illustrating due to describing and when exposure The figure of grid deviation.

Figure 14 is the figure that the grid deviation of the measurement point due to caused by difference in height is demonstrated by by vector.

Label declaration

10: workbench；11: delineation unit；12: measuring unit；13: photomask blank；14: film；15: describing the data life At unit；20: surface；21: reference surface.

Specific embodiment

(embodiment 1)

The manufacturing method of photomask of the invention has process below.

The preparation of photomask blank

In the present invention, the pattern designed based on the device wanted is used to form come shape to photomask blank At the description of photomask, wherein the photomask blank be form on the major surface of the substrate 1 or multiple films and Obtained from optical resist film.Therefore, prepare to be formed with above-mentioned film and optical resist film in a main surface of substrate Photomask blank.

Well known photomask blank can be used in the photomask blank to be prepared.

As substrate, it is able to use the transparent substrates such as quartz glass.Although there is no limit for size and thickness, as The substrate of manufacture for display device device, being able to use on one side is 300mm~1800mm, with a thickness of 5~15mm degree Substrate.

In this application, in addition to the substrate before forming film, will also be formd in main surface sometimes one or Substrate after multiple films, alternatively, the substrate after foring optical resist film in turn is referred to as " substrate " (alternatively, photo blanks Structure base board, photomask base plate).

In the flatness of the main surface of measurement substrate and the process of height distribution, form a film substantially without generating in master The influence of the thickness of the film and optical resist film on surface.This is because the film thickness of film and optical resist film is sufficiently small, and not Substantive influence is brought to above-mentioned measurement.

It can in addition to the photomask (optical concentration OD=3 or more) of exposure light when blocking using photomask as film To be semi-transparent film (exposure light transmission is 2~80%) of the part through exposure light, it is also possible to phase shift film (for example, exposure The phase shift film that the phase-shift phase of light is 150~210 degree, exposure light transmission is 2~30% degree) or can also be control light The optical films such as reflexive antireflection film.And the functional membranes such as etching barrier film can also be included.It can be single film, It can be the stacking of multiple films.For example, the photomask comprising Cr and antireflection film can be applied, include Cr compound and metal The semi-transparent film of silicide and phase shift film etc..It can also be using the photomask blank that multiple films have been laminated.By multiple to this The respective pattern of film forms application and covers method of the invention, it is possible to which the light of the transferability with excellent coordinate precision is made Mould.

The photoresist for being formed in most surface can be the negativity of being also possible to of positivity.Light as display device is covered Mould, positivity are useful.

The process of I preparation pattern design data A

Pattern design data is the data for the transfer pattern designed based on the device (display device etc.) wanted.

There is no limit for the device application produced using photomask of the invention.For example, by being applied to constitute liquid crystal Each layer of showing device and each construct of organic EL display device, can obtain excellent effect.For example, the present invention can be had For having line of the spacing less than 7 μm, (there are line width (CD:Critical in line or gap with space pattern sharply Dimension, critical dimension) less than 4 μm or the line of 3 μm of part and space pattern etc.) or hole of the diameter less than 5 μm Display device photomask of subtle design of pattern etc. etc..

When directly making to use it to describe in the case where not being corrected pattern design data, when due to describing The difference of film surface shape when (when being placed into drawing apparatus) and exposure (when being held in exposure device), is being transferred Coordinate precision when foring transfer pattern on body is insufficient (referring to Figure 13).Therefore, the correction based on following process is carried out.

The process that II obtains transfer surface amendment data D

Obtain transfer surface and correct data D, transfer surface amendment data D indicate since photomask is remained to exposure device and The deflection of caused film surface, and be the deflection other than self weight flexure ingredient.Specifically, the process can be carried out as follows.

The process of II-1 acquisition substrate surface shape data B

By measuring the surface shape of the main surface (film surface side), substrate surface shape data B is obtained.

For example, can remain the substrate of measurement object, main surface is vertical, and it is substantially right to be set as the flexure based on self weight Main surface shape does not have influential state, is measured by flatness measuring instrument (with reference to Fig. 1).

Measurement can be carried out using flatness measuring instrument, used and examined to the reflected light of the light (laser etc.) irradiated The optical measurement methods such as survey.As the example of measuring device, for example, can Ju Chu ?field Jinggong Co., Ltd manufacture flatness The measuring device etc. that measuring instrument FFT series or Japanese Unexamined Patent Publication 2007-46946 bulletin are recorded.

It, can equally spaced (setting standoff distance be spacing P) on the setting edge on the whole of main surface at this point, in main surface The intersection point (grid point) for the grid that the direction XY is described, and set it as measurement point (with reference to Fig. 2).

It is, for example, possible to use flatness measuring instruments with the following functions, that is, using vertical plane as benchmark face, and needle The datum level and above-mentioned each measurement point are measured at a distance from Z-direction (with reference to Fig. 2) to each measurement point.Pass through the measurement, Neng Gouzhang The main surface shape (flatness) of substrate is held, thereby, it is possible to obtain substrate surface shape data B.In fig. 2 it is shown that set P as The example of 10mm.

As shown in (a) of Fig. 2, the height of the Z-direction of whole measurement points in main surface is measured.As a result, according to flatness The form of mapping graph obtains substrate surface shape data B (with reference to (a) of Fig. 7).

In addition, when obtaining aforesaid substrate surface profile data B, for substrate back side (with the main surface as film surface Opposite face), measurement point also is set in position corresponding with film surface side, and similarly measured, thus, it is possible to find out substrate Back side shape data and the distribution of the substrate thickness (film surface is at a distance from back side) of each measurement point.The thickness distribution of substrate Describing is TTV (Total thickness variation: overall thickness fluctuation).The data use in back segment.

It, can be according to the viewpoint of the time of measuring based on substrate size and correction accuracy about the setting of measurement point Viewpoint determines standoff distance P.Standoff distance P can for example be set as 2≤P≤20 (mm), more preferably be set as 5≤P≤15 (mm).

In addition, after the surface flatness measurement for having carried out film surface side least square plane can be found out according to measured value. The center in the face is set as origin O.

The process that II-2 obtains transfer face shape data C

Then, when the substrate has become photomask, consider that the photomask is maintained at the state in exposure device.Placement It is kept in the photomask of exposure device with the state of film surface towards downside.Component guarantor is kept at this point, determining in main surface The multiple holding points held are produced photomask surface shape when the shape according to holding member shifts multiple holding point Raw displacement reflects into substrate surface shape data B, to obtain transfer face shape data C ((a), (b) with reference to Fig. 7).

In this process, it is preferable to use FInite Element.Therefore, mask model is generated as its preparation stage (Fig. 3).

It is measured by the flatness of already described film surface side and back side, has obtained the shape data on two surfaces.Herein, for The measurement point of most peripheral, base ends side and the most peripheral measurement point be separated by 1 spacing position at further chase after respectively Add an imaginary measurement point, and the height of the Z-direction of the imagination measurement point is set to identical with the measurement point of most peripheral Highly.This is to correctly reflect the dimension and weight of substrate in FInite Element used below.In addition, in film surface side Imaginary measurement point is also set with the centre of the correspondence measurement point of back side, and sets the median of corresponding 2 measured values.And And adjacent measurement point (comprising imaginary measurement point) ((a), (b) with reference to Fig. 3) is connected by straight line.

In addition, above-mentioned imagination measurement point is not limited to be set to the situation in the measured value center of film surface and the back side, certainly may be used It is equally spaced at 2 points or 3 points with through-thickness.

Schematic diagram from front and back sides and the cross-section observation mask model is shown in (a) of Fig. 4~(d).

Then, in the mask model, setting photomask is kept multiple holding points of component holding in exposure device. These holding points be when photomask has been equipped in exposure device, be kept component using contact or absorption kept, The point of constraint, the difference according to the manufacturer of exposure device, age and size, therefore, according to exposure device to be used into Row determines.

In this mode, as an example, illustrate that the holding member configured in parallel is attached on the opposite both sides of substrate The case where film surface side contacts closely with substrate.That is, in the model shown in (b) of Fig. 5, if the measurement point on dotted line is to protect It holds a little.In exposure device, holding point contacts and restrained to forcibly shifting with holding member, as a result, according to substrate The physical property having, it is whole that displacement reaches film surface shape.

In the model shown in (a) of Fig. 5, in a manner of making the position as the measurement point of holding point be zero on Z axis Set forced displacement amount.In addition, Z-direction zero position with reference to be set least square plane (and be located at the plane On origin).For example, if the value of the film surface side flatness of some measurement point as holding point is 5 μm, the measurement point Forced displacement amount is " -5 μm ".

Then, the Model Condition prepared above is input to the software of FInite Element (FEM), is calculated each other than holding point Which kind of displacement is measurement point will do it due to above-mentioned forced displacement.Thereby, it is possible to obtain the film for indicating the photomask in exposure device " the transfer face shape data C " of face shape.It include the flexure ingredient (reference based on self weight in transfer face shape data C (b) of Fig. 7).

In application FInite Element, the parameter of various physics values and condition is needed.In this mode, by way of example, carry out Following setting.

[substrate (quartz glass) physics value condition]

Young's modulus E:7341kg/mm^2

Poisson's ratio ν: 0.17

Weight density m:0.0000022kg/mm^3

[mask model condition]

Coordinate value (x, y, z) archives of each measurement point: (about film surface, the back side, intermediate point whole measurement points) connection survey Measure the condition archives of point: hexahedron

In this mode, about the correspondence measurement point at film surface and the back side, in-between point (including imaginary measurement point), make adjacent Point be all connected each other, thus become the integrated model of hexahedron (with reference to Fig. 6).

[keeping condition]

Set the archives of forced displacement amount: the forced displacement amount of above-mentioned holding point

Also, pass through the shift amount of whole measurement points other than Finite element arithmetic holding point.

And the balance of power of the photomask being maintained in exposure device by acting on the photomask in static.This When, following formula is set up.

Self-weight vector g- stress vector σ=0.

Wherein,

Stress vector σ=[k] × shift amount vector u

(wherein, " k " is the matrix being made of Young's modulus e and Poisson's ratio ν)

Self-weight vector g=member pixel volume × weight density m × gravity direction vector.

Herein, as shown in fig. 6, element is each hexahedron one by one.

When by whole elements (substrate is whole) superposition,

G1- σ 1+g2- σ 2+g3- σ 3+=0

G1+g2+g3+=σ 1+ σ 2+ σ 3+=[k1] u1+ [k2] u2+ [k3] u3+

Wherein, shift amount vector (u1, u2, u3) is the shift amount of each measurement point, for the numerical value to be found out. Wherein, as described above, the shift amount vector at holding point is entered as forced displacement amount.

Shift amount vector by each measurement point gone out by above-mentioned Finite element arithmetic, can obtain and be maintained at exposure device The data of the film surface shape of interior photomask.That is, the data are the photomasks when carrying out pattern transfer by exposure device The data of film surface shape, i.e. " transfer face shape data C ".

The process that II-3 obtains transfer surface amendment data D

In terms of quantitatively calculating is held in the deformation of substrate film surface of exposure device, above-mentioned FInite Element is highly effective 's.Wherein it is possible to ignore the influence for being applied to the gravity of substrate.But in process below, in order to find out description correction chart Case data need the removal gravity flexure ingredient from " transfer face shape data C ", are had so that not will do it with by exposure device The standby duplicate correction of correction carried out for the compensation mechanism of gravity flexure ingredient.Therefore, it finds out from above-mentioned transfer surface shape Deflection, the i.e. self weight of self weight flexure of the removal based on substrate bends the transfer surface amendment data D (reference after ingredient in data C (e) of Fig. 7).

Therefore, the deformation ingredient (self weight flexure ingredient) for being based only upon self weight flexure is calculated.That is, to identical with aforesaid substrate The substrate (also referred to as ideal substrate) of material and shape, size and ideal form (principal plane ideal plane parallel to each other), finds out It is based only upon the deformation of the gravity flexure of main surface (with reference to Fig. 7 (d)).Also referred to as reference figuration data C1.Herein, can with it is upper It states similarly using FInite Element.

Alternatively, the gravity flexure ingredient for finding out imaginary ideal substrate can also be substituted, and reference substrate as defined in preparing, And the deformation based on self weight flexure is found out to it by the process of above-mentioned II-1~II-2.It can be used and in this case obtain Reference figuration data C2 substitutes above-mentioned C1.In the case where the specification of reference substrate has been determined for specific exposure device, This method can be applied.

Also, it, can if subtracting C1 (or C2) from the transfer face shape data C found out and finding out difference It obtains transfer surface and corrects data D.((e) of Fig. 7)

The process that III obtains height distributed data E when describing

Fig. 8 is the concept map of drawing apparatus used in the photo mask manufacturing method of embodiment of the present invention.Description dress Setting at least has workbench 10, delineation unit 11, height measurement unit 12 and describes the data generation unit 15 (arithmetic element). Photomask blank 13 is fixed on workbench 10.Photomask blank is formed with film 14 in single side, and is configured to make to be formed There is the face-up of film 14.The energy beam such as laser is irradiated in delineation unit 11, in describing process, for being fixed on work The photomask blank 13 with optical resist film on platform 10 describes defined transfer pattern.Height measurement unit 12 for example, by Air cushion etc. is configured to spaced apart from the surface of photomask blank 13.Height measurement unit 12 corresponds to cover based on light The height change of the surface shape of die body 13, and make the upward downward mechanism of height, the master of photomask blank 13 can be measured The height (Z-direction) on surface.

In addition, the method as measurement apparent height, in addition to the method described above, it is possible to use following methods etc. are without quilt It limits: using for component identical with height measurement unit 12 to be maintained the side that the air mass flow of certain position measures Method, between the method that the electrostatic capacitance gap measures, based on the method for having used the step-by-step counting of laser, optical focusing.

On the workbench of such drawing apparatus, main surface (film surface side) is made to load photomask blank in upside, Carry out the elevation carrection of the film surface at the above measurement point (standoff distance P) set out.Data after having carried out mappingization to it It is height distributed data E when describing shown in Fig. 9 (b).

As noted above it is believed that height distribution will be because being that accumulate as follows will be because made of relative to the deformation of ideal plane:

(1) bumps of work top,

(2) flexure of substrate caused by the foreign matter on workbench sandwiches,

(3) bumps of the film surface of photomask blank,

(4) film surface due to caused by the back side of photomask blank is concave-convex is concave-convex.

Then, the film surface of the photomask blank of the state is described.

IV obtains the process for describing differential data F

Then, the difference of height distributed data E and the transfer surface amendment data D found out before when obtaining obtained description Point.The difference of the film surface shape of photomask when the difference is the film surface shape and exposure of photomask blank when describing (wherein, is gone In addition to gravity bends ingredient).It is to describe differential data F (with reference to (c) of Fig. 9).

The photomask film surface being maintained in exposure device will be because being that accumulate as follows will be thus relative to the deformation of ideal plane At:

(5) bumps (substantially identical with above-mentioned (3)) of photomask film surface,

(6) it is forced the film surface applied deformation due to being kept by photomask holding member,

(7) based on the flexure of self weight.

Therefore, the difference (wherein, eliminating (7)) of this 2 film surface shapes is due to being to become to generate the coordinate based on transfer The element of the reason of deviation, it can be said that the correction of " pattern design data A " should be applied to.The data are above-mentioned descriptions Differential data F (with reference to (c) of Fig. 9).

The process of V acquisition description grid deviation amount data G

The displacement (grid deviation amount) above-mentioned description differential data F being converted on XY coordinate.For example, can be by following Method converted (with reference to Figure 10).

Figure 10 is the enlarged drawing in the section of the substrate 13 on the workbench 10 of drawing apparatus.Film 14 is omitted.Institute as above State, configure the shape on the surface 20 of substrate 13 on workbench 10 due to it is multiple will thus deformed from ideal plane.

When describing in height distributed data E, in the measurement point with highly 0 (that is, height and the consistent survey of reference surface 21 Measure point) height of adjacent measurement point is when being H, formed by the surface 20 of substrate 13 caused by the difference in height and reference surface 21 The angle, φ at angle is indicated by following formula:

Sin Φ=H/Pitch ... (formula 1)

(Pitch: the standoff distance of measurement point, that is, with adjacent measurement point distance P).

In addition, in above formula as H/Pitch can also be taken to the gradient of the short transverse of substrate surface.

In addition, also can be approximated to be following formula if the value of Φ is sufficiently small:

Φ=H/Pitch ... (formula 1').

In the following description, (formula 1) is used.

In the above case said, the measurement point due to caused by the difference in height can pass through following formula in the deviation d of X-direction It finds out:

D=sin Φ × t/2=H × (t/2Pitch) ... (formula 2).

In addition, if Φ is sufficiently small, also can be approximated to be following formula in above formula:

D=Φ × t/2=H × (t/2Pitch) ... (formula 2').

Alternatively, the coordinate of the measurement point due to caused by difference in height can also be calculated by using the method for vector Departure.Figure 14 is the figure that the grid deviation of the measurement point due to caused by difference in height is demonstrated by by vector.When describing In height distributed data E, the inclined surface generated by any 3 measurement point is considered.At this point, the deviation of inclined surface and X-direction The deviation delta Y of Δ X, inclined surface and Y direction pass through following formula subrepresentation.

Δ X=t/2 × cos θ x

Δ Y=t/2 × cos θ y ... (formula 3)

2 tilt vectors can be generated by any 3 measurement point.It is calculated and is generated using the apposition of this 2 tilt vectors Normal line vector relative to inclined surface.

In turn, it is calculated using the inner product of normal line vector and X-axis unit vector, calculates cos θ x, utilize normal line vector and Y-axis The inner product of unit vector calculates, and calculates cos θ y.

After calculated cos θ x and cos θ y is substituted into (formula 3), the deviation delta X of X-direction can be finally calculated With the deviation delta Y of Y direction.

In addition, wherein t is the thickness of substrate.The thickness t of each measurement point is included in the TTV obtained above.In addition, Here the numerical value of TTV can also not be used, and uses the average value of substrate thickness.

Therefore, to whole measurement points on substrate 13, height distributed data when correcting data D with transfer surface and describe is found out The corresponding height of the difference of E calculates X-direction, the coordinate shift amount of Y-direction, thus for description differential data F obtained Description grid deviation amount data G can be obtained.

VI is corrected the description process of the description of pattern data H

Using description achieved above grid deviation amount data G and " pattern design data A ", it is corrected pattern data The description of H.

At this point, description correction chart can also be found out according to description grid deviation amount data G, correcting pattern design data A Case data H (not shown), and described according to description correcting pattern data H.

It, can also be to the description obtained according to each measurement point grid deviation amount number in correcting pattern design data A It is processed and is used according to G.For example, can using used least square method each measurement point data interpolating or After defined rule is standardized, description grid deviation amount data G is reflected into pattern design data A.

Alternatively, can also correct the coordinate system that the drawing apparatus has according to description grid deviation amount data G, make Described with calibration coordinate system obtained and " the pattern design data A ".This is because in many drawing apparatus, After giving defined correction to the coordinate system that it has, and has the function of the description based on the calibration coordinate.

The description used at this time is same as described above with grid deviation amount data G, can also be processed.

In addition, plotting method of the invention is not limited to aforesaid way.

When describing, can be carried out in transfer with indicia patterns etc. are suitably increased outside area of the pattern.As described later, can The indicia patterns of measurement of coordinates are added herein and are described.

For example, as previously mentioned, the shape for the holding member that exposure device has sometimes is different according to device.It is stated upper In bright, feelings of the holding member configured in parallel near the opposite both sides of substrate with the film surface side contacts of substrate are illustrated Condition, still, even if can also be applied in the exposure device of 4 linear holding members with four sides along substrate The present invention.It, can be appropriate when Model Condition and forced displacement amount of the exposure device when providing the calculating of above-mentioned FInite Element Them are changed to be exposed in ground.

In addition, in the above method, photomask is kept holding point (the substrate film surface restrained in the plane of component holding Least square plane).This is to maintain the mode that component keeps photomask in single plane.But in holding point due to protecting The shape of component is held in the case where being not on single plane, in the process for obtaining transfer face shape data C, setting is forced When shift amount, reflect the shape of holding member.

As long as the sequence of process can also be changed in addition, not interfering function and effect of the invention.

In plotting method through the above way, after the pattern data after describing correction in photomask blank, pass through figure The technique that case is formed manufactures photomask.

About pattern forming technology

Photomask blank (photo mask midbody) after being described becomes photomask by process below.

Well known method can be applied to pattern forming technology.That is, the resist film for implementing description is shown by well known Shadow liquid develops, to form resist pattern.Film can be lost using the resist pattern as etching mask It carves.

Well known method can be used in engraving method.Dry ecthing can be applied, it can also be with wet etch.The present invention is as aobvious The manufacturing method of the photomask of showing device be it is particularly useful, therefore, in the case where wet etch, can significantly obtain Effect of the invention.

In addition, the description process about present invention mentioned above, the object of the description be not only photomask blank (not by Describe the green body of transfer pattern), it is also possible to that there are multiple films and is formed on part of it in figuratum photomask Mesosome.

For the photomask blank with multiple films, in the description process of the pattern formation for each film, energy Enough apply the description process of present invention mentioned above.In this case, excellent, high-precision overlapping accuracy can be produced Photomask is extremely beneficial on this point.

Drawing apparatus

In addition, the application includes invention relevant to the drawing apparatus that can implement plotting method as described above.

That is, the drawing apparatus is following drawing apparatus, it is used for being formed with film and light on the major surface of the substrate The photomask blank of resist film describes transfer pattern.Drawing apparatus has unit below.

Height measurement unit

Height measurement unit is such as lower unit: its can in such a way that main surface is in upside by the photomask blank In the state of being placed on workbench, the height distribution of the main surface is measured, to obtain height distributed data when description E。

Input unit

Input unit is the unit that can input following information:

The transfer pattern design data A of pattern；

Indicate the substrate surface shape data B of the main surface shape of the substrate；

Information relevant to the hold mode when substrate to be remained to exposure device；And

The substrate physical property infomation of physics value comprising the baseplate material.

Arithmetic element

Arithmetic element is such as lower unit: it is able to use the substrate surface shape data B, related to the hold mode Information and the substrate physical property infomation, calculate transfer surface correct data D, the transfer surface amendment data D expression be maintained at The main surface shape of the substrate of state in exposure device and be removal self weight flexure ingredient after main surface shape, and And

The difference of height distributed data E and the transfer surface amendment data D when finding out the description, thus operation and gained To difference is corresponding, the description grid deviation amount data G at multiple points in the main surface.

As arithmetic element, such as arithmetic unit well known to usable personal computer etc..

Delineation unit

Delineation unit is such as lower unit: it is able to use the description grid deviation amount data G and the design Data A is described in the photomask blank.

Additionally, it is preferred that having the control unit controlled above-mentioned input unit, arithmetic element and drawing apparatus.

Here, information relevant to hold mode for example preferably comprises the shape of holding member or keeps by substrate The coordinate for the substrate holding point that substrate is contacted with holding member when in exposure device (can be calculated using the information of coordinate and be kept The forced displacement amount of point).

Substrate physical property infomation for example can be the Young's modulus, Poisson's ratio and weight density of substrate.

By using such drawing apparatus, description work needed for photo mask manufacturing method described above can be implemented Sequence.

As described above, in accordance with the invention it is possible to obtain photomask, which can make to be formed in processed The coordinate precision of the pattern of body is extremely high.

In addition, when checking such photomask before shipment, the light for the state that most expectation consideration is positioned in check device The difference of mask and the photomask for the state being maintained on exposure device is checked.

Therefore, inventor has found the necessity of new inspection method.

The process of VII acquisition patterns coordinate data L

The photomask for having carried out pattern formation is placed on coordinate inspection in such a way that film surface (pattern forming face) is in upside It looks on the workbench of device, carries out measurement of coordinates.The data for being located at this acquisition are patterns coordinate data L.

Here, it is preferred that being formed simultaneously the indicia patterns in the main surface of photomask with pattern with transfer in advance by measurement Coordinate carry out measurement of coordinates.The indicia patterns are preferably provided at multiple in main surface and outside the region of transfer pattern At position.

The process that VIII obtains transfer surface amendment data D

On the other hand, it obtains transfer surface and corrects data D, which corrects data D and indicate due to keeping the photomask To the deflection of the main surface caused by exposure device and be in addition to self weight bend ingredient other than the main surface change Shape amount.This is identical as the process of above-mentioned II-1~II-3.In the photomask of the invention produced using above-mentioned plotting method In the case of, it is able to use the transfer surface amendment data D obtained.

The process that IX obtains height distributed data I when checking

The photomask has been loaded in such a way that film surface (pattern forming face) is in upside on the workbench of check device In the state of, the height distribution of the main surface is measured, to obtain height distributed data I when inspection.

Elevation carrection in the process is carried out in " process for obtaining height distributed data E when describing " of above-mentioned III Elevation carrection it is identical.In addition, in this process, preferably in measurement point identical with the elevation carrection in the process of above-mentioned III Place, measurement height.

X obtains the process for checking differential data J

The difference of height distributed data I and transfer surface amendment data D, obtain and check differential data J when by finding out inspection (with reference to (a)~(c) of Figure 11).

The process of XI acquisition inspection grid deviation amount data K

The grid deviation amount at multiple points in main surface corresponding with differential data J is checked, described is calculated, so as to find out Inspection grid deviation amount data K (with reference to (c)~(d) of Figure 11).Here, the difference of height is converted into grid deviation amount Process can be carried out similarly with the process of above-mentioned V.

Also, inspection obtained grid deviation amount data K and the patterns coordinate data L are used, described turn is carried out The print inspection of pattern.

Specifically, the inspection of transfer pattern can reflect inspection grid deviation amount data K to design number According in A, and correction design data M and patterns coordinate data L obtained are used and (compared) to carry out.

It is sat alternatively, the inspection of the transfer pattern can reflect inspection grid deviation amount data K to the pattern It marks in data L, and uses and (compare) calibration coordinate data N obtained and the pattern design data A to carry out.

It is preferred that inspection method through the invention, the photomask produced to manufacturing method through the invention is examined It looks into.

In addition, there is no limit also there is no limit for structure for the purposes of photomask.

It knows in the photomask that so-called binary mask, masstone mask, phase shifting mask etc. have arbitrary membrane structure, Function and effect of the invention can be obtained.

Check device

In addition, the present invention includes invention relevant to the check device that can implement inspection method as described above.

That is,

A kind of photomask inspection device, checks photomask, which has pair on the major surface of the substrate Film carries out transfer pattern made of pattern formation, wherein the photomask inspection device includes

Arithmetic element uses the substrate surface shape data B, information relevant to the hold mode and the base Plate physical property infomation, operation transfer surface correct data D, and transfer surface amendment data D indicates the state being maintained in exposure device The substrate main surface shape and be main surface shape after removal self weight flexure ingredient, and when finding out the inspection The difference of height distributed data I and transfer surface amendment data D, so that operation is corresponding with obtained difference, the master The grid deviation amount data K of the inspection at multiple points on surface；And

Inspection unit uses the inspection grid deviation amount data K and the pattern design data A, described in inspection The transfer pattern of photomask.

Information relevant to the hold mode when substrate to be remained to exposure device and comprising the baseplate material Physics value substrate physical property infomation it is for example aforementioned described.

Operation transfer surface amendment data D refers to the fortune for carrying out process identical with the process of II-1~II-3 above-mentioned It calculates, transfer surface amendment data D indicates the main surface shape of the substrate for the state being maintained in exposure device and is removal Main surface shape after self weight flexure ingredient.

Turning for the photomask is being checked with grid deviation amount data K and the pattern design data A using the inspection When print pattern, necessary comparison (if it is necessary, carrying out the operation for comparing) is carried out in the process of the XI.

The manufacturing method of display device

The present invention is a kind of manufacturing method of display device, comprising the following steps: by turning to being formed in main surface The photomask of print pattern is exposed, and pattern transfer is carried out to the device substrate with machined layer, in the display device In manufacturing method, the photomask produced by the manufacturing method of the present invention is used.

That is, being the manufacturing method of following display device: using the photomask produced by the manufacturing method of the present invention, and And when manufacturing the photomask, applies and filled using the exposure for defining condition to the state being maintained in exposure device Set the pattern transfer-printing method being exposed to the photomask.Erosion is carried out by the pattern that pattern is transferred to processed body The processing such as quarter, to become display device.

Here, the optical property that has of exposure device is for example when for following optical property, significant effect of the invention.

One kind being used as the exposure device that LCD is exposed with the equimultiple of (or FPD, liquid crystal use), structure are as follows:

The numerical aperture (NA) of optical system is 0.08~1.0 (especially 0.085~0.095),

Coherence factor (σ) is 0.7~0.9,

For exposure wavelength, it is set as with any one in i line, h line, g line being the exposure light for representing wavelength, particularly preferably For the wide wavelength light sources of the whole comprising i line, h line, g line.

Machined layer refers to after being transferred to the transfer that photomask has with pattern, becomes through techniques such as overetch Each layer of the construct of desired electronic device.For example, being formed for driving liquid crystal display device and organic EL display device TFT (thin film transistor (TFT)) circuit in the case where, instantiate pixel layer, source/drain layer etc..

Device substrate refers to the substrate of the circuit with the construct as the electronic device wanted, for example, liquid crystal Display panel substrate, organic EL panel substrate etc..

In turn, the present invention be a kind of display device manufacturing method, comprising the following steps: using above-mentioned exposure device, with And multiple photomasks of transfer pattern are formed in respective main surface, it is multiple processed on device substrate to being formed in Layer successively carries out pattern transfer, in the manufacturing method of the display device, comprising using manufacturing method through the invention to manufacture The process of photomask out.

In the display device produced using the present invention, overlapping (superposition) precision for constituting each layer of the device is high. Therefore, the high yield rate of display device manufacture, manufacture efficiency are high.

[embodiment]

Illustrate that the invention based on photo mask manufacturing method (describing process) of the invention is imitated using schematic diagram shown in Figure 12 Fruit.

Here, showing the result for having found out following situations by emulating: with specific substrate surface shape (substrate table Face shape data B) substrate (photomask blank) on depict transfer pattern in the case where, when being arranged in exposure device The coordinate precision of transfer pattern how to change (as a result, how the coordinate precision for the pattern being formed on transfer printing body becomes Change).

Firstly, depicting specific test pattern in above-mentioned photomask blank using drawing apparatus.Survey as used herein Photomask blank on probation forms photomask and positivity in the main surface of the quartz base plate with 800mm × 920mm size Optical resist film.

As pattern design data as used herein, it is set as the test pattern comprising cross pattern, wherein the cross figure Case, according to the interval of 50mm, configures in the almost entire surface of main surface along X, Y-direction.Also, by the photoresist into Row development, and wet etching is carried out to photomask, obtain the test photomask with shading film figure.It is placed in coordinate In check device, carried out measurement of coordinates the result is that (a) of Figure 12.

In addition, drawn due to the workbench flatness of drawing apparatus and the workbench flatness of coordinate check device herein The grid deviation risen will measure in advance the workbench flatness of stream oriented device because that can pass through, and be gone from the data of (a) of Figure 12 It removes.

Then, to the seat in the state that the test has been arranged to exposure device (equimultiple projection exposure mode) with photomask Mark deviation is emulated.Herein, it using the shape information and substrate physical property infomation of the mask holding member of exposure machine, uses The grid deviation (eliminating self weight deflection) generated in the above-mentioned test pattern of Finite element arithmetic, obtains (b's) of Figure 12 Data (comparative example).

On the other hand, when describing identical test pattern to above-mentioned photomask blank, the coordinate system of plotter is implemented After correction, pattern design data is depicted.Description seat is found out by the process of above-mentioned II-1~V in the timing of coordinate system Departure data are marked to be corrected.It is shown in (c) of Figure 12 and the test that result obtains is placed in coordinate with photomask Check device, and carry out the result after measurement of coordinates.

Then, as described above, in the state of being arranged to exposure device with photomask to the test for obtaining result Grid deviation emulated.(d) (embodiment) of Figure 12 shows the result of emulation.

According to (d) of Figure 12, it is found that can be obtained on transfer printing body closer to design compared with (b) of Figure 12 The transferred image of data.In the photomask that the method according to the invention produces, coordinate precision is high, and can be by error of coordinate Value is suppressed to less than 0.15 μm.That is, following precision can be become: almost eliminating the seat due to caused by the ability of drawing apparatus Mark the error percentage other than deviation.

Claims

1. a kind of manufacturing method of photomask, for the photomask for manufacturing display device, the manufacturing method of the photomask includes such as Lower process: prepare the photomask blank for being formed with film and optical resist film on the major surface of the substrate, and pass through drawing apparatus Transfer pattern as defined in describing, wherein the manufacturing method of the photomask includes

Prepare the process of pattern design data (A) according to the design of the defined transfer pattern；

The process that surface shape by measuring the main surface obtains substrate surface shape data (B)；

When the photomask is maintained in exposure device, the multiple guarantors for being kept component holding are determined on said principal surface It holds a little, when shifting the multiple holding point according to the shape of the holding member, by shifting caused by the surface shape Position reflection is into the substrate surface shape data (B), thus the process for obtaining transfer face shape data (C)；

From the self weight flexure in the posture that the removal substrate is kept by the holding member in transfer face shape data (C) Ingredient, thus the process for obtaining transfer surface amendment data (D)；

In the workbench that the photomask blank has been placed on to the drawing apparatus in such a way that the main surface is in upside In the state of upper, the height distribution of the main surface is measured, thus the process for obtaining height distributed data (E) when description；

It is obtained by height distributed data (E) when the description and the difference of transfer surface amendment data (D) and describes difference number According to the process of (F)；

The grid deviation amount at multiple points in main surface corresponding with description differential data (F), described is calculated, to ask The process of description grid deviation amount data (G) out；And

Describe process to cover using the description grid deviation amount data (G) and the pattern design data (A) in the light Described on die body.

2. the manufacturing method of photomask according to claim 1, which is characterized in that

In the process for finding out transfer face shape data (C), FInite Element is used.

3. the manufacturing method of photomask according to claim 1, which is characterized in that

In the description process, described using correcting pattern data (H), the correcting pattern data (H) are to pass through root The pattern design data (A) is corrected with grid deviation amount data (G) according to the description and is obtained.

4. the manufacturing method of photomask according to claim 1, which is characterized in that

In the description process, according to the description with grid deviation amount data (G), the coordinate having to the drawing apparatus System is corrected, and is described using calibration coordinate system obtained and the pattern design data (A).

5. the manufacturing method of photomask according to claim 1, which is characterized in that

When the photomask to be maintained in exposure device, the multiple holding points for being kept component holding are configured in plane On.

6. the manufacturing method of photomask according to claim 1, which is characterized in that

The substrate surface shape data (B) is by the photomask blank or to be used for base as the photomask blank Plate remain main surface it is vertical in the state of, what the position by measuring multiple measurement points in the main surface was found out.

7. a kind of manufacturing method of display device in main surface, comprising the following steps: by being formed with transfer pattern Photomask is exposed, and carries out pattern transfer to the device substrate with machined layer, the manufacturing method of the display device It is characterized in that,

Include: the process for the photomask that manufacturing method described in any one being ready to pass through in claim 1~6 produces； And to the process that the photomask of the preparation is exposed.

8. a kind of manufacturing method of display device in respective main surface, comprising the following steps: using transfer figure is formed with The multiple photomasks and exposure device of case successively carry out pattern transfer, institute to the multiple machined layers being formed on device substrate The manufacturing method for stating display device is characterized in that, includes:

The work for the multiple photomask that manufacturing method described in any one being ready to pass through in claim 1~6 produces Sequence；And

The process that multiple photomasks of the preparation are exposed.

9. a kind of drawing apparatus, it is used for being formed with the aobvious for manufacturing of film and optical resist film on the major surface of the substrate The photomask blank of showing device describes transfer pattern, wherein the drawing apparatus includes

The photomask blank is being placed on workbench in such a way that the main surface is in upside by height measurement unit In the state of upper, the height distribution of the main surface is measured, height distributed data (E) when describing is obtained；

Input unit inputs the pattern design data (A) of the transfer pattern, the main surface shape that indicates the substrate Substrate surface shape data (B), information relevant to the hold mode when substrate to be remained to exposure device and comprising institute State the substrate physical property infomation of the physics value of the material of substrate；

Arithmetic element uses the substrate surface shape data (B), information relevant to the hold mode and the substrate Physical property infomation, operation transfer surface correct data (D), and height distributed data (E) and the transfer surface when finding out the description The difference of data (D) is corrected, so that operation is corresponding with obtained difference, the description use at multiple points in the main surface Grid deviation amount data (G), wherein transfer surface amendment data (D) is the institute for indicating the state being maintained in exposure device The data of the main surface shape of substrate are stated, and are the data after removal self weight flexure ingredient；And

Delineation unit uses the description grid deviation amount data (G) and the pattern design data (A), in the light Described on mask blank,

In the operation of transfer surface amendment data (D), when the photomask is maintained in exposure device, in the master The multiple holding points for being kept component holding are determined on surface, and the multiple holding point is made according to the shape of the holding member When displacement, by the reflection of displacement caused by the surface shape into the substrate surface shape data (B), transfer surface shape is found out Shape data (C), and then from the posture that the removal substrate is kept by the holding member in transfer face shape data (C) Self weight bend ingredient.